BG DienTuCongSuat

HC VIN CNG NGH BU CHNH VIN THNG
--------------------

ThS. Nguyn Trung Hiu
ThS. Nguyn c Vit

BI GING
IN T CNG SUT
(Dnh cho sinh vin chuyn ngnh in-in t)

H Ni, 7-2010

ii
LI NI U

in t cng sut l lnh vc k thut hin i, nghin cu ng dng cc linh kin bn
dn cng sut lm vic ch chuyn mch vo qu trnh bin i in nng. Hiu v in
t cng sut s h tr cho chng ta kh nng phn tch, thit k cc mch in-in t vi
chnh xc cao, hot ng n nh.
Cun bi ging in t cng sut ny c bin son phc v cho chng trnh o
to h i hc chuyn ngnh in-in t ca Hc vin Cng ngh Bu chnh Vin thng.
Ti liu ny gip cho sinh vin cc kin thc c bn v in t cng sut, cc linh kin
in t, cc mch bin i in-in t t lm tin cho sinh vin hiu, bit phn tch v
thit k cc mch in t cng sut.
Ni dung bi ging gm 7 chng:
Chng 1: Cc khi nim c bn
Chng 2: Cc linh kin bn dn
Chng 3: Chnh lu v lc in
Chng 4: B bin i in p mt chiu
Chng 5: Nghch lu v bin tn
Chng 6: n p ngun
Chng 7: Cc ng dng ca cc b bin i cng sut
Trong ThS. Nguyn Trung Hiu bin son cc chng 1, 2, 3, 4, 6 v ThS. Nguyn
c Vit bin son cc chng 5, 7.
Do hn ch v mt thi gian cng nh kin thc nn khng th trnh khi nhng thiu
st trong ln bin son u tin ny, chng ti xin chn thnh cm n v mong i kin
ng gp ca bn c gi v theo a ch: B mn K thut in t, Khoa K thut in t 1,
Hc vin Cng ngh Bu chnh Vin thng.

iii
MC LC
LI NI U ........................................................................................................................ i
LI NI U ....................................................................................................................... ii
THUT NG VIT TT ..................................................................................................... vi
CHNG 1: CC KHI NIM C BN ............................................................................ 1
1.1. TR TRUNG BNH CA DNG IN, IN P, CNG SUT ............................. 1
1.2. TR HIU DNG CA DNG IN, IN P ....................................................... 2
1.3. H S CNG SUT .................................................................................................. 4
1.3.1. Mt s khi nim .................................................................................................. 4
1.3.2. Cng sut tn hiu ................................................................................................. 4
1.3.2. Cch nng cao h s cng sut .............................................................................. 4
1.4. MO DNG TN HIU ....................................................................................... 5
1.5. HIN TNG NHIU V BIN PHP KHC PHC ............................................. 7
BI TP ............................................................................................................................ 7
CHNG 2: CC LINH KIN BN DN .......................................................................... 8
2.1. C TNH C BN CA CC PHN T BN DN CNG SUT ..................... 8
2.2. DIODE ........................................................................................................................ 8
2.3. TRANSISTOR ............................................................................................................ 9
2.3.1. BJT cng sut ....................................................................................................... 9
2.3.2. MOSFET cng sut ............................................................................................ 13
2.4. THYRISTOR ............................................................................................................ 15
2.5. TRIAC ...................................................................................................................... 21
2.6. GTO, IGCT, MCT, IGBT .......................................................................................... 22
2.6.1. GTO (Gate Turn Off Thyristor) .......................................................................... 22
2.6.2. IGCT (Integrated Gate Commutated Thyristor) ................................................... 24
2.6.3. MCT (Mos Controlled Thyristor) ........................................................................ 26
2.6.4. IGBT (Insulated Gate Bipolar Transistor) ........................................................... 27
2.6.5. Mt s linh kin khc ......................................................................................... 29
2.7. SO SNH KH NNG HAT NG CA CC LINH KIN .............................. 30
2.8. VN LM MT VAN BN DN ..................................................................... 30
CHNG 3: CHNH LU V LC IN ........................................................................ 31
3.1. GII THIU CHUNG .............................................................................................. 31
3.1.1. Khi nim ........................................................................................................... 31
3.1.2. Cch mc cc van bn dn .................................................................................. 32
3.2. CC DNG MCH CHNH LU C BN ............................................................ 34
3.2.1. Chnh lu mt pha khng iu khin .................................................................. 34
3.2.2. Chnh lu ba pha khng iu khin ..................................................................... 42
3.2.3. Chnh lu mt pha c iu khin ........................................................................ 46
3.2.4. Chnh lu ba pha c iu khin ........................................................................... 50
3.3. CHNH LU BI P ............................................................................................... 57
3.4.1. Chnh lu bi p na sng .................................................................................. 57
3.4.2. S chnh lu bi p mt pha ton sng ........................................................... 58
3.4. GHP NI TIP V SONG SONG CC B CHNH LU .................................... 59
3.4.1. B chnh lu cu 2 pha ni tip ........................................................................... 59
3.4.2. B chnh lu cu 2 pha song song ....................................................................... 60

iv
3.5. B LC .................................................................................................................... 61
3.5.1. B lc san bng .................................................................................................. 61
3.5.2. Cc loi b lc san bng ..................................................................................... 62
CU HI N TP .......................................................................................................... 64
CHNG 4: B BIN I IN P MT CHIU ......................................................... 67
4.1. GII THIU CHUNG .............................................................................................. 67
4.2. B BIN I P MT CHIU LOI FORWARD ................................................ 67
4.2.1. B bin i lm vic mt phn t mt phng ti .................................................. 68
4.2.2. B bin i lm vic hai phn t mt phng ti I v II ........................................ 72
4.2.3. B bin i lm vic bn phn t mt phng ti .................................................. 74
4.2.4. B bin i lm vic ti hai phn t I v IV ........................................................ 76
4.2.5. Sng hi p dng trn ti RLE ............................................................................ 77
4.2.6. Ghp song song cc b bin i .......................................................................... 78
4.3. B BIN I P MT CHIU LOI FLYBACK.................................................. 79
4.4. MCH TT SCR...................................................................................................... 80
4.4.1. V d mch tt SCR ............................................................................................ 81
4.4.2. S chuyn mch cng cc SCR ...................................................................... 81
4.4.3. S chuyn mch mm cc SCR ...................................................................... 84
4.5. NG DNG ............................................................................................................. 87
4.5.1. Nguyn l iu khin b bin i........................................................................ 87
4.5.2. iu khin ng c mt chiu ............................................................................ 88
4.5.3. Cc b ngun mt chiu - cp in hay n p xung ............................................. 89
4.5.4. Nghch lu .......................................................................................................... 90
TM TT ....................................................................................................................... 90
CHNG 5: NGHCH LU V BIN TN ..................................................................... 91
5.1. GII THIU CHUNG .............................................................................................. 91
5.1. PHN LOI NGHCH LU .................................................................................... 91
5.1.1. Nghch lu song song v ni tip ........................................................................ 91
5.1.2. Nghch lu ngun dng v ngun p ................................................................... 93
5.3. NGHCH LU NGUN DNG ............................................................................... 93
5.3.1. S mt pha..................................................................................................... 93
5.3.2. S 3 pha ......................................................................................................... 97
5.4. NGHCH LU NGUN P ..................................................................................... 98
5.4.1. S mt pha..................................................................................................... 98
5.4.2. S ba pha ....................................................................................................... 99
5.4.3. Nghch lu a bc ............................................................................................. 101
5.4.4. Tnh ton gn ng nghch lu ngun p .......................................................... 104
5.5. IU KHIN P RA V HN CH SNG HI .................................................. 104
5.5.1. Phn tch sng hi in p................................................................................. 104
5.5.2. iu khin p ra ............................................................................................... 105
5.5.3. Hn ch sng hi u ra .................................................................................... 108
5.6. MCH IU KHIN NGHCH LU .................................................................... 108
5.6.1. Mch to logic ba pha ....................................................................................... 108
5.6.2. Mch to p chun hnh sin dng ROM v DAC (bin i s tng t) ............ 109
5.6.3. Mch iu khin nghch lu dung chng trnh ROM....................................... 110
6.7. BIN TN .............................................................................................................. 111
5.8. NG DNG ........................................................................................................... 113

v
5.8.1. Cc b ngun tn s cao ................................................................................... 113
5.8.2. B ngun xung s dng nghch lu ................................................................... 114
5.8.3. B ngun xoay chiu khng gin on UPS (b lu in) ................................. 114
CU HI N TP ........................................................................................................ 115
CHNG 6: N P NGUN .......................................................................................... 116
6.1. GII THIU CHUNG ............................................................................................ 116
6.2. CC THNG S C TRNG ............................................................................ 116
6.3. N P NGUN S DNG PHN T HIU CHNH .......................................... 117
6.3.1. S khi chung .............................................................................................. 117
6.3..2. B n nh in p vi hiu chnh ni tip, khng khuch i so snh ............. 118
6.3.3. B n nh in p vi hiu chnh ni tip c khuch i so snh ..................... 119
6.3.4. B n p vi hiu chnh ni tip, dng IC KTT lm b khuch i so snh .... 120
6.3.5. Cc mch bo v hn ch dng, p .................................................................... 122
6.4. B N NH IN P DNG VI MCH TCH HP 3 CHN .......................... 124
6.4.1. Gii thiu chung v vi mch tch hp 3 chn..................................................... 124
6.4.2. Cc mch n nh in p dng vi mch tch hp 3 chn .................................. 127
6.4.3. Cc mch nng cao in p ra v dng ra .......................................................... 128
6.5. NGUN N P I XNG ................................................................................. 129
6.6. MCH N DNG .................................................................................................. 130
6.6.1. Mch n dng dng transistor ........................................................................... 130
6.6.2. Mch n dng dng IC n nh 3 chn .............................................................. 131
6.7. NGUN N P MT CHIU KIU CHUYN MCH ........................................ 132
6.7.1. Khi nim v ngun n p kiu chuyn mch ................................................... 132
6.7.2. S khi tng qut ca b ngun n p kiu chuyn mch theo nguyn l iu
ch rng xung ...................................................................................................... 135
6.7.3. Mt s mch trong b ngun n p kiu chuyn mch ...................................... 136
CU HI N TP ........................................................................................................ 149
CHNG 7: CC NG DNG CA CC B BIN I CNG SUT ..................... 155
7.1. TRUYN TI IN MT CHIU (HVDC) .......................................................... 155
7.1.1. Gii thiu ......................................................................................................... 155
7.2.2. Nguyn l ca h thng HVDC ........................................................................ 155
7.1.3. Cu to ca h thng HVDC ............................................................................. 155
7.1.4. u nhc im v ng dng ............................................................................. 156
7.2. B KHI NG MM .......................................................................................... 158
7.4. B BIN TN CNG NGHIP ............................................................................. 158
7.5. NGUN LIN TC (UPS) ..................................................................................... 159
7.5.1. Gii thiu chung v UPS .................................................................................. 159
7.5.2. ng dng ca UPS trong thc t ....................................................................... 161
TI LIU THAM KHO .................................................................................................. 162

vi
THUT NG VIT TT

AC Alternating Current
BB B bin i
DAC Digital Analog Converter
DC Direct Current
ETO Emitter Turn Off Thyristor
GTO Gate Turn Off Thyristor
HVDC High Voltage Direct Current
IGCT Integrated Gate Commutated Thyristor
KTT Khuch i thut ton
MCT Mos Controlled Thyristor
MTO Mos Turn Off Thyristor
NL Nghch lu
ROM Read Only Memory
SCR Controlled Rectifier
TRIAC Triode Alternative Current
UPS Uninterrupted Power Supply

Chng 1. Cc khi nim c bn
1
CHNG 1: CC KHI NIM C BN
Gii thiu chung
- Tn mn hc: in t cng sut (Power Electronics)
- in t cng sut l mt b phn ca in t ng dng hay in t cng nghip.
- Thnh phn chnh cn nghin cu l cc b bin i trong hnh 1.1. Phn loi b bin
i theo mc ch ta c: Chnh lu (AC DC), nghch lu (DC AC), Bin i in p DC
(DC DC), Bin i in p AC, bin tn (AC AC).

Hnh 1.1: Cc thnh phn chnh ca b bin i
B bin i = Mch in t cng sut + B iu khin.
Mch TCS gii hn cc s s dng linh kin in t lm vic ch ng ngt,
l cc bn dn in t dng cho bin i nng lng in.
B iu khin = Mch iu khin vng kn (nu c) + Mch pht xung.
V d bn dn in t: Diode, transistor, SCR,
*) Ni dung kho st mch in t cng sut:
- u vo kho st: Mch TCS + tn hiu iu khin bn dn in t + c tnh ti.
- u ra: Hot ng ca mch u(t), i(t) cc phn t => cc c trng dng, p, cng
sut.
Di y ta i tm hiu mt s khi nim c bn.
1.1. TR TRUNG BNH CA DNG IN, IN P, CNG SUT
Gi i(t) l hm bin thin tun hon theo thi gian vi chu k T
p
. Tr trung bnh ca i
lng i, vit tt l I
0
c xc nh theo h thc:
0
0
0
1
( ).
p
t T
p t
I i t dt
T
+
=
}
(1.1)
Vi t
0
l thi im u ca chu k c ly tch phn.
Ta c in p trung bnh U
0
, dng in trung bnh I
0
tnh theo cng thc tnh (1.1).
V d 1.1: Tr trung bnh ca dng in
2
Xt qu trnh dng in trn hnh 1.2, tr trung bnh dng in cho bi h thc:
0.5 0.3
0 0
1 1
( ). 10. 6 [ ]
0.5 0.5
d
I i t dt dt A = = =
} }

Hnh 1.2:
Trong nhiu trng hp, thc hin tch phn theo hm bin thi gian phc tp hn thc
hin tch phn theo bin gc X, vi X cho bi h thc:
X=e.t vi e l tn s gc.
Khi y, tr trung bnh i lng theo gc X tnh theo h thc:
0 0
0 0
1 1
( ). ( ).
p
X X t Tp
d
p p t X
I i t dt i X dX
T X
+ +
= =
} }
(1.2)
Vi X
0
= e.t
0
; X
p
= e.T
p
; X = e.t; dX = d(e.t)
V d 1.2: Tr trung bnh ca in p
Tnh tr trung bnh in p chnh lu ca b chnh lu cu 1 pha khng iu khin. Hm
in p chnh lu c dng u = U
m
.|sin(e.t)|; vi U
m
= 220 2 [V]; e = 314 [rad/s].
Gii:
D dng thy rng, chu k ca dng p trn l T
p
= 0,02 [s].
t X = 314.t; X
p
= 314 x 0,02 = 2t [rad]. Ta c:
( )
0
0
2
0
2
0
1 1
. . | sinX|.dX
2
2 2 2 1 1 2
sin X.dX ( ).sin X.dX .220 2 198[V]
2 2 2 2
p
X X
d m
p X
m m m
m
U u X dX U
X
U U U
U
t
t t
t
t
t t t t t t
+
= =
= + = + = = =
} }
} }

1.2. TR HIU DNG CA DNG IN, IN P
Gi i(t) l hm bin thin tun hon theo thi gian vi chu k T
p
. Tr hiu dng ca i
lng i, vit tt l I
R
c xc nh theo h thc:
| |
0
0
2 1
( ) .
p
t T
R
p t
I i t dt
T
+
=
}
(1.3)
Vi t
0
l thi im u ca chu k c ly tch phn.
3
in p hiu dng U
R
, dng in trung bnh I
R
cng c tnh theo cng thc tnh (1.3).
V d 1.3:
a) Tnh tr hiu dng ca in .sin(314 ) 220 2.sin(314 ) ( )
m
u U t t V = = ?
b) Xc nh tr trung bnh v hiu dng ca cc in p u
1
v u
2
sau:
1
; 0
0 ; 0
u u
u
u
>
=
<
;
2
; 0
; 0
u u
u
u u
>
=

<

Hng dn:
a) Chu k ca dng p trn l T
p
= 0,02 [s]. t X = 314.t;
X
p
= 314 x 0,02 = 2t [rad]. Tr hiu dng in p cho bi h thc:
0
0
2 2
2 2 2
0 0
2
2
0
1 1 1 1 cos 2
. . . ( .sin ) . . .
2 2 2
1
. . 220 [V]
2 2 2
P
t T
RMS m m
P t
m m
X
U u dt U X dX U dX
T
U U
X
t t
t
t t
t
+
= = =
= = =
} } }

b) Xc nh tr trung bnh v hiu dng ca cc in p u
1
v u
2
sau:
2
1
0 0
1 1 220 2
.sin . .sin . 99 [V]
2 2
m
AV m m
U
U U x dx U x dx
t t
t t t t
= = = = =
} }

2 2
2
0 0
1 1 1
.sin . .sin . ( ).sin .
2 2 2
2 2 2 2 2
220 198 [V]
2 2
AV m m m
m m m
U U x dx U x dx U x dx
U U U
t t t
t
t t t
t t t t
= = +
= + = = =
} } }

2 2
2
1
0 0 0
1 1 cos 2 1 sin 2
( .sin ) . .
2 2 2 2 2 4
m m
rms m
U U x x
U U x dx dx x
t
t t
t t t
| | | |
= = =
| |
\ . \ .
} }

2
1
220 2
. 155, 56 [V]
2 2 2 2
m m
rms
U U
U
t
t
= = = =
2 2
2
2
0 0 0
1 1 cos 2 1 sin 2
( .sin ) . .
2 2 4
m m
rms m
U U x x
U U x dx dx x
t
t t
t t t
| | | |
= = =
| |
\ . \ .
} }

2
220 [V]
2
m
rms
U
U = =

4
1.3. H S CNG SUT
1.3.1. Mt s khi nim
- Cng sut tc dng P: biu th nng lng s dng trong mt n v thi gian.
1
( ). ( ).
T
P u t i t dt
T
=
}
(1.4)
- Cng sut biu kin S: tnh bng tch s gi tr hiu dng dng v p, biu th
nng lng s dng trong mt n v thi gian nu xem ti l thun tr.
.
R R
S U I = (1.5)
- H s cng sut hay PF (Power Factor) i vi mt ti c nh ngha bng t s gia
cng sut tiu th P v cng sut biu kin S m ngun cp cho ti .
P
PF
S
= = (1.6)
Trong trng hp tn hiu xoay chiu hnh sin, ta c: cos
F
P = vi l gc lch gia
dng in v in p trong mch.
1.3.2. Cng sut tn hiu
C nhiu cng thc tnh cng sut trong mch in t cng sut, ph thuc vo mc
ch s dng.
+ Cng sut ca tn hiu mt chiu (P
0
hay P
DC
)
0 0 0
. P U I = ; U
0
v I
0
l in p trung bnh v dng in trung bnh.
+ Cng sut ca tn hiu xoay chiu (hnh sin):
1 1 1 1
. .cos P U I = ; U
1
, I
1
l bin in p v dng in;
1
l gc lch pha gia
dng in v in p.
+ Cng sut ton phn u ra, gm thnh phn mt chiu v sng hi bc cao.
0
1
1
( ). ( ). . .cos
n n n
T
n
P u t i t dt P U I
T

=
= = +
}

cc b bin i u ra p mt chiu, th V
0
, I
0
, P
DC
l cc thnh phn mong mun,
sng hi bc cao (cc thnh phn hnh sin) l khng mong mun, ch to ra cc tc dng ph.
1.3.3. Cch nng cao h s cng sut
Cc b bin i cng sut l nhng thit b c tnh phi tuyn. Gi s ngun in p cung
cp c dng sin v dng in qua n c dng tun hon khng sin. Da vo phn tch Fourier
p dng cho dng in i, ta c th tch dng in thnh cc thnh phn sng hi c bn I
(1)

cng tn s vi ngun p v cc sng hi bc cao I
(2)
, I
(3)
,... D dng thy rng, sng in p
ngun v sng hi c bn ca dng in to nn cng sut tiu th ca ti:
5
P = P
1
= m.U.I
(1)
.cos
1
vi
1
l gc lch pha gia in p v dng in sng hi c
bn.
Cc sng hi cn li (bc cao) to nn cng sut o.
Ta c:
2 2 2 2 2 2 2
(1) (2) (3)
2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2
(1) ( ) (1) 1 (1) 1 ( )
2 2
2 2 2 2
1
( . . ) . .( ...)
. . . . . . .cos . . .sin . .
j j
j j
S mU I m U I I I
S m U I m U I m U I m U I m U I
S P Q D

= =
= = + + +
= + = + +
= + +

Vi
(1) 1
. . .cos P mU I = : Cng sut tiu th ca ti.
1 (1) 1
. . .sin Q mU I = : cng sut phn khng (cng sut o do sng hi c bn ca dng
in to nn).
2 2 2
( )
2
. .
j
j
D m U I
=
=

: cng sut bin dng (cng sut o do cc sng hi bc cao ca
dng in to nn).
T ta suy ra h s cng sut:
2 2 2
1
P P
PF
S
P Q D
= = =
+ +

Mun tng h s cng sut, ta c th:
+ Gim Q
1
(cng sut o ca sng hi c bn) bng cch thc hin b cng sut phn
khng. Cc bin php thc hin nh b bng t in, b bng my in ng b kch
t d hoc dng thit b hin i b bn dn (SVC - Static Var Compensator);
+ Gim D (cng sut o ca cc sng hi bc cao): Tu theo phm vi hot ng ca
dy tn s ca sng hi bc cao c b, ta phn bit cc bin php sau y:
- Lc sng hi: p dng cho cc sng hi bc cao ln hn sng hi c bn n gi
tr khong kHz. C th s dng cc mch lc cng hng LC. V d dng mch
lc LC cng hng vi bc 5, 7, 11..mc song song vi ngun cn lc.
- Kh nhiu: cp trong mc 1.5.
Ngoi ra, c th biu din h s cng sut theo h thc sau:
(1)
1
cos
I
PF
I
= = =
1.4. MO DNG TN HIU
a) Sng hi bc cao
6
( )
0 0
1 1
( ) sin cos
n n n
n n
u t U A n t B n t U u e e

= =
= + + = +

Vi ( ) sin
n n n
u U nt e = ,
2
( ).sin .
n
T
A u t nt dt
T
e =
}
,
2
( ).cos .
n
T
B u t nt dt
T
e =
}
,
2 2
n n n
U A B = + ,
1 n
n
n
A
tg
B

(
=
(

,
2 2
0
1
1
2
R n
n
U U U
=
= +

trong :
U
0
: tr s trung bnh ( thnh phn mt chiu ) ca u(t)
e : tn s gc ca u(t), chu k 2 / T t e =
u
n
: sng hi bc n - c tn s ne.
A
n
, B
n
: cc thnh phn sin, cos ca sng hi bc n
U
n
,
n
: bin v lch pha ca sng hi bc n
U
R
: Tr hiu dng ca u(t).
b) H s hnh dng ( form factor ): t s gia gi tr hu dng v gi tr hiu dng.
+ i vi b bin i c u ra mt chiu:
0
DC
R
U
KF
U
=
Vi
0
U : in p trung bnh u ra;
R
U : in p hiu dng u ra.
+ i vi b bin i c u ra xoay chiu:
1
AC
R
U
KF
U
= ;
Vi
1
U : in p hiu dng sng hi bc 1 (c bn) u ra;
R
U : in p hiu dng u
ra.
c) bin dng (THD Total harmonic distortion)
+ u ra in p mt chiu:
2 2
0
0
R
U U
THD
U
=
+ u ra in p xoay chiu:
2 2
1
1
R
U U
THD
U
=
7
1.5. HIN TNG NHIU V BIN PHP KHC PHC
Nhiu l nguyn nhn lm cho mch chy khng n nh, cung nh lm gim hiu nng
ca cc mch in t ni chung v mch in t cng sut ni ring. Hin tng nhiu c mt
s nguyn nhn sau:
- Do mi trng bn ngoi tc ng. nh hng t cc ngun nhiu t nhin hoc do
cc h thng in t t gn .
- Do bn thn mch gy ra. Cc sng tn s cao ny pht sinh t cc mch iu khin
pht sng vi tn s cao hoc do qu trnh ng ngt cc linh kin cng sut, cc
sng hot ng trong cc mch in c kh nng pht sng in t lan truyn vo
mi trng v to nn tc dng gy nhiu cho cc thit b xung quanh, thm ch gy
nhiu cho chnh bn thn mch iu khin cc thit b cng sut.
Bin php khc phc: dng t, dng mch lc, dng bc kim dy dn hoc dng li
chng nhiu cho thit b.
BI TP
1. Tnh tr trung bnh in p chnh lu ca b chnh lu cu 1 pha khng iu khin.
Hm in p chnh lu c dng u = U
m
.|sin(e.t)|; vi U
m
= 100 2 [V]; e = 314 [rad/s].
2. Tnh tr hiu dng ca in p 200 2.sin(100 ) [ ] u t V t = .
3. Xc nh tr trung bnh v hiu dng ca cc in p i xng dng hnh tam gic cn
c bin U
m
= 15 [V], chu k T = 0,02 s.
4. Xc nh tr trung bnh v hiu dng ca cc in p i xng dng hnh vung c
bin U
m
= 15 [V], chu k T = 0,02 s.
5. Cho mt tn hiu c gi tr in p 200 2.sin(100 ) [ ]
3
u t V
t
t = + v cng dng
in 2 2.cos(100 ) [ ]
3
i t V
t
t = + . Tnh cng sut tn hiu?

Chng 2. Cc linh kin bn dn
8
CHNG 2: CC LINH KIN BN DN

2.1. C TNH C BN CA CC PHN T BN DN CNG SUT
Bn dn: l cht m trong nhit bnh thng n c dn in gia cht dn in v
cht cch in. Hin nay, bn dn thng dng l Silic, Silic tinh khit c cu trc tinh th rt
bn vng. nhit thp, n khng c cc in tch t do. V th, Silic tinh khit hot ng
nh cht cch in.
Hn hp Silic vi cc nguyn t khc c nh hng rt ln n dn in ca Silic.
Mt hn hp ca Silic cha tha in tch t do v cc in tch ny tr thnh ht dn in,
hn hp ny to thnh cht bn dn loi N. Mt s hn hp ca Silic thiu in t- chng c
l hng. Cc l hng to thnh thnh phn dn in ch yu. Hn hp loi ny to thnh bn
dn loi P vi dn in loi P.
Lp tip xc PN: l vng trong bn dn m vng dn in loi P c chuyn thnh
loi N.
c tnh V-A: biu din quan h gia dng in i qua hai cc ca linh kin v in p
t gia cc cc . Cc gi tr in p v dng in ny c hiu l gi tr p v dng mt
chiu khng i.
- Dn in hay bo ho (ON): st p qua knh dn in rt b, dng ph thuc vo ti.
- Kha (OFF): dng qua n rt b (~ 0), knh dn in nh h mch.
Cc linh kin chnh: Diode, transistor, thyristor (SCR), Triac, GTO, IGCT, MCT,..
2.2. DIODE

Hnh 2.1: Diode
M t v chc nng, c tnh V-A, tnh cht ng
Sinh vin tham kho trong ti liu Cu kin in t.
Kh nng chu ti:
in p nh mc: c xc nh bi in th nghch cc i U
RRM
. l in p
nghch ln nht c th lp li tun hon trn diode.
9
Khi thit k mch bo v chng li qu p nghch ngu nhin, ta nh mc theo in
th nghch khng th lp li u
RSM
. Khi diode lm vic, th khng cho php xut hin p ln
hn u
RSM
.
Dng in nh mc: diode khi hot ng pht sinh tn hao. Tn hao ch yu do dng
thun gy ra. Tn hao do dng nghch gy ra khng ng k v cng sut tn hao do qu
trnh ngt s c ln ng k khi tn s ng ngt ln hn khong 400Hz. Cng sut tn
hao tng khng c php lm nng mch diode ln qu nhit cc i V
jM
, nu khng lp
PN s b ph hng. V th diode c lm mt v kh nng chu dng ca n b gii hn bi
tr trung bnh cc i ca dng thun i
F(AV)M
. i vi tng loi diode v iu kin lm mt,
cc nh sn xut thng a ra cc c tnh I
FAVM
= f (T
amb
) (T
amb
l nhit mi trng).
i vi nhng c tnh khc nhau ny, thng s c chn l hnh dng ca dng qua diode.
Gi tr I
FAV
ng vi nhit T
amb
v iu kin lm mt cho trc v ng vi dng na sng
sin ca dng (50Hz) c gi l dng c trng ca diode. Kh nng chu dng ca diode
hin nay khong vi ngn ampere.
Kh nng chu qu dng: c cho dng th qu dng I
FSM
= f(t), ng vi mt
gi tr dng vt qu mc bnh thng, th cho bit khong thi gian m diode c kh
nng chu c m khng b hng. Gi tr qu dng cho php c gi l dng thun cc i
khng th lp li c I
FSM
. Vi nhit ban u cho trc ca bn bn dn v tr ca p
nghch, gi tr I
FSM
cho bit ln ca dng thun chu c trong thi gian xc nh.
Mt thng s khc nh hng ln kh nng qu dng l nng lng tiu hao, xc nh
bng tch phn theo thi gian ca hm I
F
bnh phng. Lng nng lng ny t l vi nng
lng m bn bn dn c kh nng hp th di dng nhit trong thi gian qui nh (khong
10ms) m khng b hng. T c tnh I
FSM(t)
v
2
.
F
I dt
}
, ta c th thit k mch bo v qu
dng cho diode.
Ghp ni tip v song song cc diode c thc hin khi kh nng chu p v dng ca
cc diode khng p ng c nhu cu t ra. Khi ghp ni tip, ta cn m bo tnh phn
b in th u trn cc diode.
Cc diode c bit:
1. Schottky diode: st p theo chiu thun thp (khong 0,3V). Do , n c s
dng cho cc mch in p thp. in p ngc chu c khong 50- 100V
2. Diode phc hi nhanh: c p dng trong cc mch hot ng tn s cao. Kh nng
chu p n vi ngn volt v dng vi trm amper, thi gian phc hi t
rr
khong vi s.
3. Diode tn s cng nghip: cc diode tn s cng nghip c ch to t st
p thp khi dn in. H qu, thi gian t
rr
tng ln. Kh nng chu p ca chng khong vi
kilovolt v dng in vi kiloamper.
2.3. TRANSISTOR
2.3.1. BJT cng sut
(Tham kho ti liu Cu kin in t)
10
Kh nng chu ti
nh mc in p: ph thuc vo in p nh thng cc lp bn dn v xc nh bi
gi tr u
CEOM
-gi tr in th cc i t ln lp collector-emitter khi i
B
= 0 v gi tr cc i
u
EBOM
- in th lp emitter-base khi i
C
= 0. Cc gi tr ny l nhng tr tc thi. Ta cn phn
bit chng trong trng hp ti dng mt chiu khng i theo thi gian v cc ti xung, mc
du thng thng trong c hai trng hp cc in p c thit lp ging nhau.
nh mc dng in: gi tr cc i ca dng collector i
CM
, dng emitter i
EM
v dng
kch i
BM
. l cc gi tr cc i tc thi ca transistor khi ng trong trng thi bo ha.
Khi thit lp chng, ta xt n nh hng ca cc mi tip xc, dy dn ti in cc v cc
gi tr h
FEsat
, u
CEsat
.
Cng sut tn hao: cng sut tn hao to nn trong hot ng ca transistor khng
c php lm nng bn dn vt qu gi tr nhit cho php T
jM
(T
jM

=150
0
C). V th, cn
lm mt transistor v ton b cng sut tn hao phi nh hn PtotM. Cng sut tn hao ch
yu do cng sut tn hao trn collector, P
C
= U
CE
.I
CE
to ra (cc thnh phn khc ca Ptot
thng b qua ). Gi tr P
totM
ph thuc vo phng php lm mt v c cho di dng
hm s P
tot
=f(T
amb
) (T
amb
l nhit mi trng ), thng s l U
CE
. Cng sut tn hao hnh
thnh khi transistor dn bo ha, ngay c khi I
C
= I
CM
, rt nh so vi gi tr P
totM
. Cng sut
tn hao khi transistor ngt thng khng ng k. Trong ch xung, khi tn s ng ngt
cao v vt qu gi tr chng hn 2000 Hz th cng sut tn hao trung bnh do ng ngt c
th t gi tr ng k v lm cho cng sut tn hao tng c th vt hn P
totM
.
Mch kch Transistor BJT
tng tn s ng ngt ca transistor cng sut, cn gim thi gian t
on
, t
off
. gim
ton ta c th a xung dng kch I
B
vi nh kh ln u giai on kch. Sau khi transistor
dn, c th gim dng kch I
B
n gi tr dng bo ha.
iu khin kch ng
Gai dng in kch c th t c bng mch hnh 2.2. Khi xung in p U
B
a vo,
dng in qua cng B b gii hn bi in tr R
1
.

Hnh 2.2:

1
0
1
BE
B
U U
I
R
=
11
Sau thi gian qu , dng I
B
c gi tr:

1
1
1 2
BE
B
U U
I
R R
=
+

T C
1
c np n ln

2
1 2
C B
R
U U
R R
~
+

Hng s thi gian np t:

1 2 1
1
1 2
R R C
R R
t =
+

Nu nh ta cho in p U
B
v 0, lp BE b phn cc ngc v t C
1
phng qua R
2
.
Hng s thi gian x t l t
2

= R
2
.C
1
. thi gian np v x t, rng xung phi tha
mn:
1 1
5. t t > v
2 2
5. t t >
Do , tn s ng ngt ln nht

3
1 2 1 2
1 1 0, 2
f
T t t t t
= = =
+ +

iu kin kch ngt:
Nu in p U
B
gim xung gi tr m U
2
< 0, in p ngc t ln BE bng tng in
p U
B
v U
C
.
Gai dng I
B
xut hin, sau khi t C
1
x ht, in p trn BE xc lp bng U
2
. Nu cn
thit lp qu trnh kch ng v kch ngt ring bit, ta c th s dng mch sau (hnh 2.3):

Hnh 2.3:
Diode D
1
bo v mch cng ca transistor trong thi gian kch ngt
Mch cch ly tn hiu iu khin v mch kch
Cc mch pht ra tn hiu iu khin mch cng sut dng bn dn thng yu cu
cch ly v in. iu ny c th thc hin bng optron hoc bng bin p xung.
12
Bin p xung: gm mt cun s cp v c th nhiu cun th cp. Vi nhiu cun dy
pha th cp, ta c th kch ng nhiu transistor mc ni tip hoc song song. S nguyn
l mch cch ly tn hiu iu khin dng bin p xung c v trn hnh 2.4.
Bin p xung cn c cm khng tn nh v p ng nhanh. Trong trng hp xung
iu khin c cnh tc ng ko di hoc tn s xung iu khin thp, bin p xung sm t
trng thi bo ha v ng ra ca n khng tha mn yu cu iu khin.

Hnh 2.4:
Optron: gm ngun pht tia hng ngoi dng diode (I
LED
) v mch thu dng
phototransistor. Tn hiu xung iu khin c a vo LED v ng ra c dn t
phototransistor (hnh 2.5).

Hnh 2.5:
Thi gian ton ca phototransistor khong 2-5s, t
off
= 300ns.
Mch dng optron i hi phi to ngun ring cho n. Do , mch phc tp v tn
km hn.
Mch bo v BJT
Dng mch bo v BJT tiu biu c v trn hnh hnh 2.6.
Tc dng ca mch nhm bo v transistor trc cc hin tng tng qu nhanh ca
in p
du
dt
v dng in
di
dt
qua transistor.
13
Mch RC c tc dng hn ch dc
du
dt
gia hai cc CE. Cun khng L
S
thc hin
gim s tng nhanh dng
di
dt
qua BJT.

Hnh 2.6:
2.3.2. MOSFET cng sut
Loi transistor c kh nng ng ngt nhanh v tn hao do ng ngt thp c gi l
Metal Oxide Semiconductor Field Effect Transistor (MOSFET) vi cng iu khin bng
in trng (in p).
(Tham kho thm ti liu Cu kin in t)

Hnh 2.7:
MOSFET trng thi ngt khi in p cng thp hn gi tr UGS.
MOSFET trng thi ng, i hi in p cng tc dng lin tc. Dng in i vo
mch cng iu khin khng ng k tr khi mch trng thi qu , ng hoc ngt dng.
Lc xut hin dng phng v np in cho t ca mch cng. Thi gian ng ngt rt nh,
khong vi ns n hng trm ns ph thuc vo linh kin. in tr trong ca MOSFET khi dn
in Ron thay i ph thuc vo kh nng chu p ca linh kin. Do , cc linh kin
MOSFET thng c nh mc p thp tng ng vi tr khng trong nh v tn hao t.
14
Tuy nhin, do tc ng ngt nhanh, tn hao pht sinh thp. Do , vi nh mc p
t 300V- 400V MOSFET t ra u im so vi BJT tn s vi chc kHz.
MOSFET c th s dng n mc in p 1000V, dng in vi chc amper v vi
mc in p vi trm volt vi dng cho php n khong 100A. in p iu khin ti a
20V (2V,5V,10V.. ty theo loi), mc d thng thng c th dng p n 5V iu khin
c n.
Cc linh kin MOSFET c th u song song m rng cng sut.
Mch kch MOSFET
gim thi gian kch ng t
on
ca MOSFET ta c th s dng dng mch (hnh 2.8a)
Khi tc dng in p u
G
, dng in tch in ban u cho t mch cng G:

Sau in p xc lp trn cng l

R
S
l in tr trong ca mch kch.

Hnh 2.8:
S mch kch c ci thin trn hnh 2.8b s dng cu trc totem-pole gm 2
transistor NPN v PNP. Khi in p kch U
1
mc cao, Q
1
dn v Q
2
kha lm MOSFET
dn. Khi tin hiu U
1
thp, Q
1
ngt, Q
2
dn lm cc in tch trn mch cng c phng
thch v MOSFET tr nn ngt in. Tn hiu U
1
c th ly t mch collector m (open-
collector TTL) v totem-pole ng vai tr mch m (buffer).
Tng t nh BJT, mch kch cng G ca MOSFET c th c cch ly vi mch to
tn hiu iu khin thng qua bin p xung, optron hoc cp quang (H1.14a,b).
Mch bo v MOSFET
15
Cu to khc bit ca MOSFET so vi BJT lm cho linh kin hot ng tt m
khng cn bo v nhiu nh BJT. Tuy nhin, ta c th s dng mch RC nh mc
song song vi ng ra ca linh kin hn ch tc dng cc gai in p v cc xung
nhiu dao ng xut hin khi linh kin ng.

Hnh 2.9:
2.4. THYRISTOR

Hnh 2.10:
M t v chc nng
Thyristor gm 3 lp PN v mc vo mch ngoi gm 3 cng: in cc anode A, cathode
C v cng iu khin G. V mt l thuyt tn ti cu trc thyristor: PNPN v NPNP, trong
thc t ngi ta ch pht trin v s dng loi PNPN. S thay th thyristor bng mch
transistor c v hnh 2.10. Gi s anode ca thyristor chu tc dng ca in p dng so
vi cathode (uAK > 0). Khi a vo mch G, K ca cathode (tng ng vi mch base-
16
emitor ca tranristor NPN) xung dng I
G
, transistor NPN s ng. Dng in dn tip tc qua
mch emitor -base ca transistor PNP v ng n. Cc transistor s tip tc ng ngay c khi
dng i
G
b ngt. Dng qua collector ca mt transistor cng chnh l dng i qua base ca
transistor th hai v ngc li. Cc transistor v vy cng nhau duy tr trng thi ng.
Cc tnh cht v trng thi c bn
Nu transistor b ngt, th anode c th chu c in p dng so vi cathode - trng
thi kha;
hoc in p m so vi cathode - trng thi nghch.
Hin tng ng SCR tc chuyn t trng thi kha sang trng thi dn in c th
thc hin nu tha mn c hai iu kin sau:
1/- Thyristor trng thi kha.
2/-c xung dng in kch i
G
> 0 ln.
Hin tng ngt SCR: qu trnh chuyn t trng thi dn in sang khng dn in
(tc trng thi nghch hoc trng thi kha). Qu trnh ny gm hai giai on:
1/- Giai on lm dng thun b trit tiu: thc hin bng cch thay i in tr hoc
in p gia anode v cathode.
2/- Giai on khi phc kh nng kha ca thyristor. Sau khi dng thun b trit tiu,
cn c mt thi gian - thi gian ngt, chuyn thyristor vo trng thi kha.
c tnh V-A
c tnh V-A ng ra: quan h gia in p v dng in i qua hai cc anode, cathode
(xem hnh 2.11). c tnh ng vo quan h gia in p v dng cng G (cng iu khin).
c tnh V-A ng ra gm 3 nhnh:

Hnh 2.11:
- Nhnh thun (1): thyristor trng thi dn in. st p gia anode cathode nh
khng ng k.
- Nhnh nghch (3): ng vi trng thi nghch tng t nh diode.
17
- Nhnh kha (2): ng vi trng thi kha. Nu dng i
G
= 0 th dng nhnh kha tng
t nh nhnh nghch. Thay v in tr r
R
th y l in tr r
D
(differential block resistance).
Tng t ta c in p ng u
BO
thay v u
BR
. Khi in p t n gi tr uBO, thyristor khng
b ph hng m s b ng (chuyn t trng thi kha sang trng thi dn in). Khi i
G
thay
i, ty thuc vo ln ca i
G
m gi tr ca in th kha thay i theo (in th kha
gim khi i
G
tng). Hin tng thyristor dn in do tc dng in p vt qu u
BO
(i
G
=0) l s
c gy ra do qu in p xut hin trn li.
Thng thng, ta ng thyristor bng xung dng qua mch G, K. in tr thun r
T
v
in p thun u
TO
c nh ngha tng t nh trng hp ca diode. Khc vi diode, cc
nhnh thun ca thyristor khng bt u t gc zero ca h trc m t gi tr I
H
(holding
current) dng duy tr trng thi dn. Nu gi tr dng gim nh hn iH th thyristor tr v
trng thi kha. Ngay sau khi ng thyristor, trc khi dng cng i
G
tt, i hi dng thun
phi t n hoc vt hn gi tr dng cht i
L
, i
L
> i
H
(L: Latching).

Hnh 2.12: Hnh 2.13:
ng thyristor, khong u xung dng kch phi c tr ln. Dng xung dng
thng s dng cho cng c dng nh hnh 2.12. Do tnh cht ca lp nghch khng tt nn
khng c php xut hin trn n in th m d ch rt nh. Khi thyristor trng thi
nghch vic kch vo cng G s lm tng dng nghch mt cch v ch. Cc xung iu khin
thng c truyn n thyristor nh cc bin p xung. Nhim v ca n l tch mch cng
sut khi ngun to xung kch. Khi s dng cc bin p xung, cn phi gii quyt vn lm
tt nhanh dng t ha khi xung b ngt (nu khng th dng t khng ngng tng ln sau mi
ln a xung vo) v vn bo v lp cng ca thyristor trc in p nghch. gii quyt
vn trn ta c th s dng dng mch hnh 2.16.
Cc tnh cht ng
Tc dng in p kha u
V
(hoc u
D
): v bn cht l tc dng in p nghch ln lp
bn dn (xem hnh 2.13). Lc , n hat ng nh mt t in, in dung ca n ph thuc
vo ln in p t vo:
( . )
. .
V V
C V
d C u du dC
i u C
dt dt dt
= = +
18
Theo phng trnh trn, dng i
C
t gi tr ln khi
V
du
dt
ln (gi s rng C khng
i). Bi v mt phn ng dn ca i
C
trng vi ng dn ca dng kch cng nn c tc
dng nh ng kch v lm ng thyristor ngoi mun. V th ngi ta gii hn dc ca
u
V
n gi tr:
max
V
ucrit
du
S
dt
| |
=
|
\ .

Vic ng thyristor khng xy ra ngay khi xung dng i
G
vo cng. Thot tin dng dn
i
V
i qua mt phn nh ca tit din ca thyristor ch ni vi cng G. Sau , in tch dn
tng dn ln ca tit din phin bn dn, in p kha gim dn. i vi cc thyristor, thng
thng thi gian ng in t
gt
trong khong 3 10s. Khi dng i
V
tng nhanh qu, ch c
mt phn nh tit din chung quanh mch cng G dn in v dn n qu ti, c th lm tng
nhit ln n gi tr lm hng linh kin.
V th tng ca dng i
V
b gii hn n gi tr
max
V
icrit
di
S
dt
| |
=
|
\ .

Ngt thyristor (xem hnh 2.13): giai on u din ra tng t nh khi ngt diode .
Thi gian phc hi tnh nghch trr, in tch chuyn mch Q
r
(ln hn i vi thyristor).
Sau khi phc hi in tr nghch ca cc lp J
1
v J
3
(xem hnh 2.13), qu trnh ngt vn cha
chm dt, cn c thm mt thi gian na khi phc kh nng kha - tc l khi phc in
tr nghch ca lp J
2
. V vy, ta nh ngha thm tq l thi gian ngt ti thiu cn thit m
SCR cn duy tr p ngc khi phc kh nng kha, n bt u khi dng in thun tr v
zero cho n khi in p kha tc dng tr li m khng lm SCR ng li (Ig = 0). Nu ta tc
dng in p kha ln sm.

Hnh 2.14:
19
Hn khong thi gian t
q
ny, SCR c th ng ngt ngoi mun du cha c xung
kch a vo cng kch. Thi gian ngt ph thuc vo cc iu kin lc ngt nh nhit cht
bn dn, dng b ngt, tc gim dng v in p nghch. Cc thyristor thng c t
q
trong
khong t vi s n hng trm s.
Cc h qu: cng sut tn hao do ng ngt qu in p do qu trnh chuyn i mch,
cc gii hn
ucrit
S ,
icrit
S . Qu in p do qu trnh chuyn mch c th c gii hn bng
mch RC. Cun cm khng bo v
V
di
dt
kt hp vi mch RC (song song vi SCR) gii
hn dc
V
du
dt
.
Kh nng mang ti
Kh nng chu p, dng v kh nng qu ti c xem xt tng t nh diode. in th
nghch cc i c th lp li u
RRM
v in th kha u
DRM
thng bng nhau v cho bit cc gi
tr in p ln nht tc thi cho php xut hin trn thyristor bi v in th cc i khng lp
li ca thyristor thng khng c bit. Kh nng chu p ca thyristor t n hng chc
kV, thng thng mc 5-7 kV, dng in trung bnh t n khong 5.000A. st p khi
dn in nm trong khong 1,5-3V. Phn ln cc thyristor c lm mt bng khng kh.
Cc thyristor c bit:
Thyristor cao p: c in p lp li ln nht khong vi nghn volt. Cc thng s c
trng tnh cht ng ca n khng c li (Q
r
, t
q
,S
ucrit
, S
icrit
).
Thyristor nhanh: cc thng s ci tin tnh cht ng c tt hn nh t
q
nh, S
ucrit
v
S
icrit
ln. Kh nng chu p v dng ca n thp hn.
Thyristor GATT: bn cht ging nh thyristor p ng nhanh. Bng cc tc dng in
p ngc ln mch cng, thi gian t
q
c th gim xung cn phn na so vi thyristor nhanh.
Fotothyristor: C th cho ng bnh thng bng xung kch vo cng G, hoc bng tia
sng ln v tr nht nh ca v cha thyristor.
Fotothyristor cch ly ngun xung kch v mch cng sut, cc dng ca n c v trn
hnh 2.15. Trong phng n hnh a/- s dng dng vi mch gip tn dng ngun tia sng
kch thch, phng n b/- v c/- bo m cch ly tt gia ngun xung kch v mch cng sut,
do hn ch nhiu tc dng ca sng nhiu, dng c/- ch cn cng sut kch ca ngun sng
khng ng k.
20

Hnh 2.15:
Mch kch thyristor
Trong cc b bin i cng sut dng thyristor, thyristor v mch to xung kch vo
cng iu khin ca n cn cch in. Tng t nh cc mch kch cho transistor, ta c th s
dng bin p xung hoc optron, xem hnh 2.16

(a) Hnh 2.16: (b)
Mch kch dng bin p xung c v trn hnh 2.16a. Sau khi tc dng p ln mch
cng B ca transistor Q
1
. Transistor Q
1
dn bo ha lm in p Vcc xut hin trn cun s
cp ca bin p xung v t xung in p cm ng xut hin pha th cp bin p. Xung tc
dng ln cng G ca thyristor. Khi kha xung kch cho transistor Q
1
b ngt dng qua cun s
cp bin p xung duy tr qua mch cun s cp v diode D
m
.
21
Vic a xung kch di vo cng G lm tng thm tn hao mch cng, do c th thay
th n bng chui xung. Mun vy, xung iu khin kt hp vi tn hiu ra ca b pht xung
vung qua mch cng logic AND trc khi a vo cng B ca transistor Q
1
(xem hnh
2.16b)
Mch bo v thyristor: thng thng, mch RC mc song song vi thyristor (hnh 2.16)
c th s dng bo v n chng qu in p. Mch c th kt hp vi cun khng bo v
mc ni tip vi thyristor chng s tng nhanh dng in qua linh kin
V
di
dt
.
2.5. TRIAC
Triac l linh kin c th dn dng in theo c hai chiu. V vy nh ngha dng thun
v dng ngc khng c ngha, tng t cho khi nim in p ngc. Vic kch dn triac
thc hin nh xung dng in a vo cng iu khin G. iu kin triac ng in l
a xung dng kch vo cng iu khin trong iu kin tn ti in p trn linh kin khc 0.
Ging nh thyristor, khng th iu khin ngt dng qua triac. Triac s ngt theo qui
lut c gii thch i vi thyristor.
M t v chc nng
Vic ng triac theo c hai chiu c thc hin nh 1 cng duy nht G v xung dng
kch vo cng G c chiu bt k. Bi v triac dn in c hai chiu nn ch c hai trng thi,
trng thi dn v kha. Mc d vy c th nh ngha triac c chiu thun v chiu nghch.
c tnh V-A
c tnh V-A ca triac tng t nh thyristor. Do kh nng dn in theo c hai chiu,
c tnh triac c dng i xng qua tm ta . Cn ni thm v trng hp c tnh cng
iu khin. Vic kch ng triac c th chia ra lm cc trng hp:

Hnh 2.17:
u
V

> 0: a/- u
G
> 0 , i
G
> 0
b/- u
G
< 0 , i
G

< 0
u
VR
> 0: c/- u
G
> 0 , i
G
> 0
d/- u
G
< 0 , i
G
< 0
22
Mc d c th to dng kch c du ty , nhng thc t s l thun li hn khi dng
kch dng cho trng hp dng qua triac dng v dng kch m khi dng qua triac m.
Cc tnh cht ng
Vic ng (xem thyrisror): thi gian ng t
gt
, nhanh nht trng hp a, chm nht
trng hp c. Tc tng ca dng dn b gii hn bi:
max max
V VR
icrit
di di
S
dt dt
| | | |
= =
| |
\ . \ .

Vic ngt (xem thyristor): thi gian ngt c tnh t lc gim dng dn theo mt
hng v 0 n khi c th t in p kha cng chiu ln triac. Nu ta ngt dng dn ca
triac trong mt chiu no , in th kha chiu ngc li tng ln cui qu trnh chuyn
mch vi tc ln c th gy ra vic ng ngoi mun. V th, tc tng ca in th
kha khi chuyn mch b gii hn bi gi tr:
max max
V VR
ucrit
du du
S
dt dt
| | | |
= =
| |
\ . \ .

Cc gi tr S
ucrit
thng nh hn 20V/s. Tc gii hn ca in th kha Sucrit i
vi triac in trng thi khng dn in c gi tr cao hn - khong vi trm V/s.
Kh nng chu ti
nh mc in p: Xc nh theo in p kha cc i c th lp li, n bng nhau cho
c hai hng u
DRM
= u
RRM
. in p cc i khng lp li khng c bit.
nh mc dng in: Xc nh theo gi tr hiu dng ln nht ca dng dn i
VM
.
Thng c nh ngha cho dng hnh sin i vi nhit cho trc v tc lm mt cho
trc.
2.6. GTO, IGCT, MCT, IGBT
2.6.1. GTO (Gate Turn Off Thyristor)

Hnh 2.18:

23
GTO c cu to gm bn lp pnpn tng t vi thyristor thng thng (SCR)- hnh
2.18a, vi cc tnh nng tng t ca thyristor vi im khc bit l c th iu khin ngt
dng in qua n. Mch tng ng GTO c v trn hnh 2.18b c cu trc tng t
mch m t SCR nhng c thm cng kch ngt mc song song cng kch ng. K hiu linh
kin GTO v trn hnh 2.18c.
GTO c kch ng bng xung dng in tng t nh khi kch ng thyristor thng
thng. Dng in kch ng c tng n gi tr I
GM
v sau gim xung n gi tr I
G
.
im khc bit so vi yu cu xung kch ng SCR l dng kch i
G
phi tip tc duy tr trong
sut thi gian GTO dn in.
Mch bo v
Linh kin GTO cn phi c mch bo v. Qu trnh ngt GTO i hi s dng xung
dng kch rng. iu ny dn n thi gian ngt di, kh nng di/dt v dv/dt ca GTO
thp. V th, cn phi gii hn cc tr s hot ng khng vt qu gi tr an ton trong qu
trnh ngt GTO. Hnh 2.19a l mch bo v GTO trong qu trnh ngt. T in C dng bo
v GTO trong qu trnh kch ngt phi c gi tr in dung ln hn gi tr qui nh ca nh sn
xut, t n ln khong vi F. Ngoi ra, GTO i hi mch bo v chng hin tng
tng nhanh dng in khi ng.
Diode ca mch bo v phi c kh nng chu gai dng ln bi v trong qu trnh s
xut hin dng c bin ln qua diode v t in. in tr mch bo v c tr s nh v
m bo t x in hon ton trong khong thi gian ng ngn nht ca GTO khi vn hnh.
Khi GTO ng, nng lng tch tr trn t s phi tiu tn ht trn in tr ny. V th, gi tr
nh mc cng sut ca in tr kh cao.
Mi GTO c mt gi tr dng c iu khin cc i m nu vt qu th khng th
ngt n bng xung dng ngc cng Gate. Nu trong qu trnh vn hnh b bin i cng
sut s dng GTO nh linh kin ng ngt, s c c th xy ra (v d nh ngn mch) gy
nn hin tng qu dng, h thng bo v phi c thit k nhn bit s c v ngt GTO
bo v linh kin. Nu nh gi tr dng qua GTO khi s c xy ra thp hn tr s dng cc
i th c th ngt GTO bng xung dng cng m iu khin vi bin thch hp. Nhng
nu gi tr dng s c vt qu gi tr bo v bng xung dng m, cn s dng mch bo v
kiu n by (gm kha cng sut mc song song vi linh kin GTO). Nguyn l hot ng
ca mch bo v l to ngn mch ngun cp in cho GTO bng cch kch ng mt SCR
mc song song vi linh kin GTO. Dng ngn mch lm chy cu ch v ct linh kin GTO
khi ngun. iu c minh ha trn hnh 2.18b.
Trong nhng nm gn y, GTO tr thnh linh kin ng ngt c s dng rng ri
cho cc mch cng sut ln: mt GTO loi ni tt anode c gi tr nh mc p khong
4500V v nh mc dng 6000A. Cc gi tr tng ng ca loi GTO cho php dn dng
ngc l 4500V v 3000A (Mitsubishi 1998). in p t trn GTO khi dn in thng cao
hn SCR (2-3V). Tc ng ngt t vi s n 25s. Tn s ng ngt khong 100Hz n
10kHz.
24

(a) Hnh 2.19: (b)

Linh kin cng sut s c cht lng cao nu cho st p thp khi dn in (nh
thyristor), yu cu mch iu khin n gin v kh nng ngt dng nhanh (nh IGBT). Hin
nay, mt s linh kin nh vy xut hin trn th trng v chng c kh nng thay th dn
GTO. Chng c th xem l nhng dng ci tin ca GTO, ch to theo nguyn l khi tch
hp (Power Electronics Building Block- PEBB) nhm gim bt cc yu cu v mch kch v
lm tng kh nng ngt nhanh. Cc linh kin ny gm MTO (MOS Turn-Off Thyristor), ETO
(Emitter Turn-Off Thyristor) v IGCT (Integrated Gate-Commutated Thyristor).
2.6.2. IGCT (Integrated Gate Commutated Thyristor)
Cu to v chc nng
Vic ci tin cng ngh ch to GTO thyristor pht minh ra cng ngh IGCT.
GCT (Gate Commutated Thyristor) l mt dng pht trin ca GTO vi kh nng ko
xung dng in ln bng dng nh mc dn qua cathode v mch cng trong 1s m
bo ngt nhanh dng in. Cu trc ca GCT v mch tng ng ca n ging nh ca
GTO.
IGCT l linh kin gm GCT v c thm mt s phn t h tr, bao gm c board mch
iu khin v c th gm c diode ngc.
kch ng GCT, xung dng in c a vo cng kch lm ng GCT tng t
nh trng hp GTO.
kch ngt GCT, tip xc PN base-emitter c phn cc ngc bng cch cung
cp in p ngun ngc chiu. iu ny lm trit tiu dng in qua cathode v ton b
dng in i qua cathode s c y sang mch cng vi tc rt nhanh v bin GCT tr
thnh mt transistor pnp.
c th to dng in qua mch cng tng nhanh v ln, GCT (IGCT) c ch
to c bit gim cm khng mch cng (mch vng cng iu khin cathode) n gi
tr nh nht.
Vn mu cht ca GCT l to kh nng tng nhanh dng in qua cng. iu ny
t c bng ng dn in ng trc qua mch cng- cathode v cng ngh mch iu
25
khin nhiu lp (multilayer). Chng cho php dng cng tng vi tc 4kA/s khi in th
cng- cathode mc 20V. Trong thi gian 1s, transistor npn ca GTO b ngt hon ton v
cc cng ca transistor pnp cn li b m lm GCT b ngt. Do vic ngt thc hin bng
xung dng rt ngn nn cng sut tn hao mch cng c gim n mc ti thiu. Cng
sut tiu th ca GCT gim i khong 5 ln so vi trng hp GTO.
Lp p pha anode c lm mng v lm giu ht mang in cht t cho php kh
cc ht mang in pha anode nhanh hn trong thi gian ngt. IGCT c th tch hp diode
ngc bng tip xc n
+
n
-
p c v bn phi ca hnh 2.20. Diode ngc cn thit trong cu
to ca cc b nghch lu p.

Hnh 2.20:
Qu trnh ngt dng in ca GCT bi tc dng xung dng kch cng c v minh
ha trn hnh 2.22. c th so snh vi qu trnh ngt dng ca GTO, th ca dng cng
c v cho hai trng hp.
Kh nng chu ti
u im chnh ca IGCT th hin cc mt sau:-kh nng chu p kha cao n 6kV
( d kin s tng ln n 10kV) vi tin cy cao; tn hao thp khi dn in bi c kh nng
dn nh thyristor; kh nng gii hn dng ngn mch s dng mch bo v cha cun khng
hn ch di/dt (turn on snubber) v gi thnh thp do tn dng cng ngh silicon vi mc
tch hp nng lng cao.

Hnh 2.21:
26

Hnh 2.22:
Cc thit b s dng IGCT c cng sut thay i trong khong 0,3 n 5MW cho cc
ng dng truyn ng in ni chung, n 5MW cho thit b n nh in p (Dynamic
Voltage Restorer), ngun d phng (Dynamic UPS) v my ct, n 20MW i vi cc
truyn ng c bit, 25MW i vi mch siu dn t SMES (Supermagnetic Energy
Storage) v 100MW cho thit b truyn ti in (interties).
2.6.3. MCT (Mos Controlled Thyristor)
Cu to v chc nng
MCT c cu to kt hp cng ngh ca thyristor vi u im tn hao dn in thp v
kh nng chu p cao v ca MOSFET vi kh nng ng ngt nhanh.
Hnh 2.23 m t cu trc ct ngang ca mt MCT, trong MOSFET c tch hp
trong cu trc ca SCR thc hin iu khin qu trnh ng v ngt linh kin ny. MCT
c iu khin qua cng MOS. Trong cng nghip thng xut hin cc MCT loi p. K
hiu v c tnh ca MCT c m t trn hnh 2.24.

Hnh 2.23:
27

Hnh 2.24:
kch dn MCT, xung in p m c a vo gia cng gate- anode. iu ny
dn n vic ng On- FET (p-FET) (trong khi cng off-FET (n-FET) vn b kha) v
kch thch lp cng m -emitter ca transistor npn Q1. Transistor Q1 v Q2 sau chuyn
sang trng thi dn in.
ngt MCT, in p cng gate anode chuyn sang gi tr dng. iu ny lm Off-
FET Q4 dn in v lm ni tt mch emitter lp m ca transistor Q2. Transistor Q2 v
th b tt lm MCT b ngt.
MCT t st p thp khi dn in (nh GTO) v thp hn c IGBT. Phng php
iu khin dng xung in p (nh MOSFET, IGBT). Mch li n gin hn so vi GTO v
khng i hi xung dng in m kch cng. Tc ng ngt ca MCT nhanh hn so vi
GTO. V th, MCT ang dn tr thnh linh kin iu khin ngt l tng cho cc ti c yu
cu st p thp, tn hao thp v ng ngt nhanh. Kh nng dng in ca MCT nh hn
so vi GTO.
Kh nng chu ti
MCT c p dng cho cc trng hp yu cu in tr v t cm nh vi kh
nng chu c gai dng in ln v di/dt cao. MCT c kh nng chu c tng dng
in 1.400kA/s v gi tr dng nh 14kA, tnh qui i trn din tch l 40kA/cm
2
i vi
xung dng in. Cc MCT c ch to dng tch hp v d gm 4 n 6 linh kin
(ThinPak).
MCT c s dng lm thit b phng np in cho my bay, xe t, tu thy, ngun
cung cp, ti vi. MCT cng c s dng lm cng tc chuyn mch mm (Soft switching)
trong cc mch dao ng cng hng (Auxiliary Resonant Commutated Pole). Kh nng
chu di/dt cao v gai dng ln cn m ra hng pht trin dng MCT ch to cc my ct
vi u im gn nh, gi thnh h v p ng nhanh so vi cc my ct bn dn hin ti.
MCT dng tch hp (ThinPak) cn c s dng trong cc h truyn ng my ko trong
giao thng vn ti.
2.6.4. IGBT (Insulated Gate Bipolar Transistor)
IGBT c k hiu, mch in tng ng v trn hnh 2.25.
28
IGBT l transistor cng sut hin i, ch to trn cng ngh VLSI, cho nn kch thc
gn nh. N c kh nng chu c in p v dng in ln cng nh to nn st p va
phi khi dn in.
IGBT c phn t MOS vi cng cch in c tch hp trong cu trc ca n. Ging
nh thyristor v GTO, n c cu to gm hai transistor. Vic iu khin ng v ngt IGBT
c thc hin nh phn t MOSFET u ni gia hai cc transistor npn.
Vic kch dn IGBT c thc hin bng xung in p a vo cng kch G. c tnh
V-A ca IGBT c dng tng t nh c tnh V-A ca MOSFET.
Khi tc dng ln cng G in th dng so vi emitter kch ng IGBT, cc ht
mang in loi n c ko vo knh p gn cng G lm giu in tch mch cng p ca
transistor npn v lm cho transistor ny dn in. iu ny s lm IGBT dn in. Vic ngt
IGBT c th thc hin bng cch kha in th cp cho cng kch ngt knh dn p. Mch
kch ca IGBT v th rt n gin.

Hnh 2.25:
u im ca IGBT l kh nng ng ngt nhanh, lm n c s dng trong cc b
bin i iu ch rng xung tn s cao. Mc khc, vi cu to ca mt transistor, IGBT c
st p khi dn in ln hn so vi cc linh kin thuc dng thyristor nh GTO. Tuy nhin,
IGBT hin chim v tr quan trng trong cng nghip vi hat ng trong phm vi cng sut
n 10MW hoc cao hn na.
Cng ngh ch to IGBT pht trin tng nhanh cng sut ca IGBT gip n thay th
dn GTO trong mt s ng dng cng sut ln. iu ny cn dn n cc ci tin hn na
cng ngh ca GTO v to nn cc dng ci tin ca n nh MTO, ETO v IGCT.
Ging nh MOSFET, linh kin IGBT c in tr mch cng ln lm hn ch cng sut
tn hao khi ng v ngt. Ging nh BJT, linh kin IGBT c st p khi dn in thp
(2?3V; 1000V nh mc) nhng cao hn so vi GTO. Kh nng chu p kha tuy cao nhng
thp hn so vi cc thyristor. IGBT c th lm vic vi dng in ln. Tng t nh GTO,
transistor IGBT c kh nng chu p ngc cao.
So vi thyristor, thi gian p ng ng v ngt IGBT rt nhanh, khong mt vi s v
kh nng chu ti n 4,5kV-2.000A. Hin nay cng ngh ch to IGBT ang c c bit
pht trin t dn mc in p vi ngn Volt (6kV) v dng in vi ngn Amper.
IGBT c kh nng hot ng tt khng cn n mch bo v. Trong trng hp c
bit, c th s dng mch bo v ca MOSFET p dng cho IGBT.
29
Modul IGBT thng minh (Intelligent Power Modul): c ch to bi cng ngh tch
hp cao. Trn modul cha ng phn t IGBT, mch kch li, mch bo v, cm bin dng
in. Cc modul ny t tin cy rt cao.
Mch kch IGBT t thit k tng t nh mch kch cho MOSFET. Do gi thnh
IGBT cao, v c bit cho cng sut ln, mch kch li IGBT c ch to di dng IC cng
nghip. Cc IC ny c kh nng t bo v chng qu ti, ngn mch, c ch to tch hp
dng modul ring (1,2,4,6 driver) hoc tch hp trn c modul bn dn (hnh thnh dng
complex (bao gm mch li, IGBT v mch bo v) )
Trn bng 2.1 m t thng s mt s linh kin IGBT gm: in p nh mc, dng in
nh mc, st p khi dn in (VTM) v thi gian p ng khi kch dn linh kin (to
n
).
Bng 2.1: Cc thng s c trng ca IGBT
Loi in p nh mc ln nht Dng trung bnh nh mc VTM t
on
(c trng)
Linh kin ri
HGTG32N60E2 600V 32A 2.4V 0.62s
HGTG30N120D2 1200V 30A 3.2V 0.58s
Linh kin dng module
CM400HA-12E 600V 400A 2.7V 0.3s
CM300HA-24E 1200V 300A 2.7V 0.3s
Module p thp
30V 60A 0.48V
45V 440A 0.69V
150V 30A 1.19V

2.6.5. Mt s linh kin khc
2.6.5.1. MTO (Mos Turn Off Thyristor)
Linh kin MTO thyristor c pht trin bi hng SPCO (Silicon Power Coperation)
trn c s cng ngh GTO v MOSFET. Chng khc phc cc nhc im ca GTO lin
quan n cng sut mch kch, mch bo v v cc hn ch ca tham s dv/dt. Khng ging
nh IGBT tch hp cu trc MOS ph ln ton b tit din bn dn, MTO t MOS FET
trn phin silicon.
Kh nng chu ti:
MTO thch hp s dng cho cc truyn ng cng sut ln, in p cao (>3kV cho n
10kV), dng in ln hn 4000A, st p thp (thp hn so vi IGBT) v cho cng sut ti
trong phm vi 1MVA n 20MVA do kh nng iu khin n gin v chu c p kha
ln. MTO c th s dng cho cc thit b iu khin cng sut trong h thng in (FACTS
Controller) lm vic trn nguyn l iu ch rng xung PWM. Cc ngun in d phng
cng sut ln (UPS) cng l mt hng p dng ca MTO. Kh nng iu khin ct nhanh
v d dng ca MTO lm cho n c th ng dng thun li lm cc thit b ct dng in
DC v dng in AC.
30
2.6.5.2. ETO (Emitter Turn Off Thyristor)
Ging nh MTO, ETO c pht trin trn c s kt hp cc cng ngh ca GTO v
MOSFET. ETO c pht minh bi Trung tm in t cng sut Virginia (Virginia Power
Electronics Center) hp tc vi hng SPCO.
2.7. SO SNH KH NNG HAT NG CA CC LINH KIN
Kh nng hat ng ca cc linh kin bn dn cng sut c so snh theo hai kha
cnh cng sut mang ti v tc ng ngt.
Linh kin GTO cng sut ln c sn xut vi kh nng chu c in p/dng in
t 2,5-6kV/1-6kA. GTO cn c ch to cha diode ngc vi tn hao thp, kh nng chu
in p/ dng in ca n t n 4,5kV/3kA.
Linh kin GCT c ch to gn y c kh nng chu c in p/dng in
6kV/6kA vi kh nng chuyn mch gn nh ton b dng in sang mch cng khi kch
ngt. Cm khng mch cng gim n 1/100 so vi loi GTO thng thng, cho php tc
tng dng in cng khi kch ngt n di
GQ
/dt = 6.000A/s. Thi gian lu tr ts gim cn
khong 1/10 so vi ca GTO. Cc tnh cht cho php GCT rt thun tin khi mc song song
hoc ni tip v kh nng iu khin ng ngt cng sut ln ngay c khng s dng mch
bo v.
Cc diode cho nhu cu thng thng c ch to vi kh nng chu c in p
thay i t 500V n 4kV v dng in t 60A n 3,5kA. i vi nhu cu ng ngt nhanh
kh nng dng t n 800-1.700A v in p 2.800-6.000V,
Cc thyristor cho nhu cu thng thng c ch to vi kh nng chu c in p
thay i t 400V n 12kV v dng in t 1000A n 5kA. i vi nhu cu ng ngt
nhanh, kh nng dng t n 800-1.500A v in p 1.200-2.500V,
Cc linh kin IGBT dng modul c ch to vi kh nng chu c in p/ dng
in 1,7-3,3kV/400-1.200A. Kh nng chu in p cao ca IGBT (HVIGB module) gn
y t n 6kV. Cc linh kin ch to dng modul to thun li cho vic lp t, kt ni
mch v lm gim kch thc, trng lng ca h thng cng sut.
2.8. VN LM MT VAN BN DN
Khi chn van ta phi ch n iu kin lm mt cho van v khi hot ng, van to
nhit rt ln nn iu kin lm mt cho van s nh hng n hiu qu cng nh tui th ca
van. Nu van hot ng trong iu kin c lm mt bng khng kh nh cnh tn nhit th
van c th lm vic tt vi 25% dng nh mc. Nu van lm vic trong iu kin lm mt
bng qut gi cng bc th van c th chu c n 30 60% dng nh mc. Nu lm mt
bng nc th van c th chu c n 80% dng nh mc.
Ngoi ra khi s dng cn lun phi ch n vic bo v qu dng, p cho van bn dn.

Chng 3. Chnh lu v lc in
31
CHNG 3: CHNH LU V LC IN

3.1. GII THIU CHUNG
3.1.1. Khi nim
Mt b chnh lu (hay cn gi l b nn in) l mt mch in bin i in p,
dng in xoay chiu thnh in p v dng in mt chiu.
B chnh lu (Rectifier) cng cn c gi l b bin i dng xoay chiu thnh dng
mt chiu (AC - to -DC Convertor), vi k hiu

Cc thit b in t - vin thng c nui trc tip bng dng mt chiu. ng c in
mt chiu, thit b np cho accu, thit b m in.v.v... u s dng dng mt chiu. Trong
khi cc ngun mt chiu hin c nh: my pht mt chiu, accu, pin mt tri th rt t v
cng sut ca chng rt hn ch, cn ngun xoay chiu th li ph bin nht, thun li nht,
cng sut c th coi l "v tn" m li r nht, l ngun in li c tn s 50 Hz hoc 60
Hz. s dng c ngun in li cung cp cho cc thit b tiu th in mt chiu, ta
phi s dng cc b chnh lu.
Ngy nay, thc hin vic chnh lu, ngi ta dng cc linh kin bn dn silic l
diode, thyristor SCR v thyristor GTO (thyristor tt bng cng).
Trong cc b chnh lu, cc diode cn c gi l cc van khng iu khin, cc
thyristor cn c gi l cc van c iu khin.
Cc van bn dn c u im l:
in p ri trn van thp (st p thun), do hiu sut cao.
Nhit khi lm vic thp.
Th tch v trng lng nh.
Lm vic c tc thi (khng c thi gian tr).
Tuy nhin chng c cc nhc im:
Chu nhit thp < 1500C.
Chu qu dng, qu p km.
Cc thng s ph thuc nhit .
Khi a sn phm ra th trng, nh sn xut c km theo cc thng s k thut ca linh
kin:
AC
DC

~

32
- Dng in nh mc: I
m
(A).
- St p thun: A U (V).
- in p ngc ln nht cho php: U
ng max
(V).
- Dng in ngc ln nht I
ng max
(mA).
Vi cc thyristor ngoi cc thng s trn cn thm:
- in p iu khin U
G
(V).
- Dng in iu khin I
GK
(mA).
- Dng duy tr I
dt
(mA).
3.1.2. Cch mc cc van bn dn
1) Cch mc ni tip
Cch mc ni tip cc van bn dn c s dng khi in p ngc cho php ln nht
ca van nh hn in p ngc ln nht ca b chnh lu t ln van theo tnh ton, ngha l:
U
ng max
< U
ng max tnh ton

U
ng max tnh ton
= 2 2 U
V~
~ 3U
0

Trong : - U
V~
l in p hiu dng t vo b chnh lu.
- U
0
l in p mt chiu sau chnh lu.
S van cn thit mc ni tip c tnh bng:
( )
ng max tnh to n
nt
ng max
U
n , ,
U
= 1 1 1 2 (3.1)
H s 1,1 1,2 l h s d phng.
Khi dng cch mc ni tip cc van th phi dng cc van c cng cc thng s k thut
v phi mc song song vi mi van mt in tr phn p r
pa
hoc mt t phn p C
pa
nh
Hnh 3.1, san bng in p ngc cho cc van.

Hnh 3.1: Cch mc cc van bn dn
r
pa
v C
pa
c chn da vo cc iu kin:
r
pa
< R
ngc van
r
pa
r
pa
r
pa
C
pa
C
pa
C
pa
D
1
D
2
Dn

33
1
2
= <
=
pa
C ngc van
pa
ng max
ngc van
ng max
X R
fC
U
R
I
t

Hin nay sn xut c cc dit silic chu c in p ngc ti 1600V, nn cc b
chnh lu t in p li khng phi dng cch mc ni tip cc van nn.
2) Cch mc song song
Cch mc song song cc van bn dn c thc hin khi dng nh mc ca van nh
hn dng trung bnh qua van theo tnh ton.
<
m tb t nh t o n
I I
Trong :
tb t nh t o n
I
I
m
=
0
;
I
0
l dng mt chiu qua ti.
m l s xung dng chnh lu qua ti trong mt chu k in li, m ph
thuc vo s chnh lu.
S van cn thit mc song song:
( )
t b t nh t o n
ss
m
I
n , ,
I
= 1 1 1 2 (3.2)
Khi dng cch mc song song phi s dng cc van c cc thng s k thut ging nhau
v phi mc ni tip vi mi van mt in tr phn dng r
pd
nh Hnh 3.2, hiu chnh dng
ng u gia cc van.
Hnh 3.2: Cch mc song song cc van nn
r
pd
chn theo iu kin: r
pd
> r
v
.
r
v
: in tr thun ca van, c tnh bng:
v
m
U
r
I
A
=
Ngy nay sn xut c cc van bn dn c I
m
= 1600A, nn vic mc song song
cc van trong 1 b chnh lu l khng cn thit, khi cn dng ti ln ngi ta thc hin mc
song song nhiu b chnh lu.
r
pd
r
pd
r
pd
D
1
D
2
Dn

34
3.2. CC DNG MCH CHNH LU C BN
3.2.1. Chnh lu mt pha khng iu khin
Chnh lu mt pha khng iu khin l cc b chnh lu lm vic vi in p xoay
chiu mt pha v cc van nn l diode, do in p mt chiu u ra khng iu khin
c.
Cc b chnh lu mt pha l cc b chnh lu vi cng sut va v nh, thng khng
qu 15 kW. Cc b chnh lu c cng sut ln thng dng chnh lu 3 pha khng lm
mt cn bng cc pha in li.
3.2.1.1. Chnh lu 1 pha na sng
Vi b chnh lu kiu na sng (hoc chnh lu na chu k) th in p xoay chiu u
vo b chnh lu c th ly thng t in li hoc thng qua bin p nh Hnh 3.3a, b.
Nu ti cn cch ly vi in mng v in p mt chiu trn ti khc xa vi in p
mng th phi dng bin p (Hnh 3.3b).
Hnh 3.3: S chnh lu mt pha na sng
a) Xt vi ti thun tr (Hnh 3.3a, b)
in p ngun t vo b chnh lu l u
s.

s M
u U si n t e =
Diode D lm nhim v chnh lu, R
t
l ti ca b chnh lu , c tnh thun tr.
Gi s na chu k u ca in p ngun u
s
,

et = 0 t l bn chu k dng ca u
s
nn
D thng v phn cc thun nn c dng i
0
qua ti.
Na chu k sau ca u
s
, khi et = t 2t l bn chu k m ca u
s
nn D ngt do phn cc
ngc, khng c dng qua ti, i
0
= 0 v u
0
= 0, ti bn chu k ny diode D chu in p
ngc.
Nu b qua tn hao trn diode D v ngun, ta c cc dng sng u vo, u ra ca b
chnh lu, dng in, in p ngc trn diode trn hnh 3.3c.

u
0
u
2
a

b

i
0
a) Khng dng bin p

D

D
R
t u
1
b) Dng bin p

u
0
R
t
~
u
S
a

b

u
s
i
0
+

+

35

Nh vy, ch c bn chu k dng ca in p vo (u
s
) diode D mi dn, do mi c
dng v p trn ti, cn bn chu k m ca u
s
th diode D kha, v vy dng v p trn ti
bng khng. Vy trong 1 chu k ca in p mng, ch c 1 xung dng qua ti. Gi s xung
dng qua ti trong 1 chu k ca in p mng l m; chnh lu 1 pha na sng , m = 1. in p
u ra ca b chnh lu l mt chiu nhng ngt qung, tn s ca in p gn sng (Ripple)
trn ti l: f
g
= m.f = 50Hz.
in p trn ti u
0
, dng ti i
0
l xung, nn phn tch theo Fourier ta c:

~
n , , ..
~
n , , ...
u U u
i I i
=
= +
= +
0 0 0
1 3 5
0 0 0
1 3 5

Trong : U
0
, I
0
l thnh phn mt chiu (gi tr trung bnh) ca in p v dng ti, cn
~
n , , ...
u
=
0
1 3 5
v
~
n , , ...
i
=
0
1 3 5
l cc thnh phn xoay chiu ca in p, dng trn ti, ta gi l cc hi,
cc thnh phn xoay chiu gy nn gn sng (Ripple) (hay cn gi l p mch) ca
in p trn ti.
B qua tn hao trn diode v ngun, ta tnh c tr s in p mt chiu trn ti theo
cng thc:
( )
T
s
m
U u t dt
T
=
}
0
0
(3.3)
U
0
u
0

UM

t
2t
us
UM

i
0

M
t
U
R
et
et
et
I
0
UD
et
-
UM

Hnh 3.3c: Cc dng sng ca b
chnh lu 1 pha na sng ti tr

36
Vi s chnh lu 1 pha na sng, u
0
= 0 khi T/2 s t s T nn cng thc (3.3) trong
trng hp ny l:
( )
T
M
M
U m T
U U si n t dt cos
T T
e
e
e
| |
= =
|
\ .
}
0
0
1
2

do f = 1/T v e = 2t f, nn

M
M
U
U , .U , U
t
= = =
0
0 318 0 45 (3.4)

M
t t t
, .U U , U
I
R R R
= = =
0
0
0 318 0 45

U l tr s hiu dng ca u
s
.
- Tr s hiu dng ca in p trn ti.
( )
2
2
0
1
0 5
2
= = =
}
T /
M
t M M
U
U U si n t dt , U
T
e
- Tr s hiu dng ca dng ti:

0 5
= =
hdt M
t
t t
U , U
I
R R
(3.5)
- Tr s hiu dng ca cc thnh phn xoay chiu trn ti.

2 2
0 0
=
t
U U U (3.6)
- T s ca in p hiu dng trn ti vi in p mt chiu trn ti gi l h s dng
sng, c k hiu l.

0
=
t
U
d
U
(3.7)
- T s gia in p hiu dng ca cc thnh phn xoay chiu trn ti U
0~
vi thnh
phn mt chiu trn ti U
0
, gi l h s gn sng, c k hiu l g.

0
0
=

U
g
U
(3.8)
T biu thc (3.6) v (3.8) ta suy ra:

2
2
0
1 1
| |
= =
|
\ .
t
U
d d
U
(3.9)
- Hiu sut chnh lu: l t s ca cng sut mt chiu trn ti P
0
vi cng sut hiu
dng trn ti P
t
.
37

0
=
t
P
P
q (3.10)
P
t
l cng sut hiu dng trn ti.
b) Vi ti dung tnh (hnh 3.4a)
Khi u ra ca b chnh lu ta mc mt t C, c tr s sao cho:

e
= <<
c t
X R
m c
1

y m =1, th ti ca b chnh lu c coi l mang tnh dung (hnh 3.4a).

Vi iu kin X
C
<< R
t
th tt c cc thnh phn xoay chiu ca dng chnh lu i
0~
s
c ni tt qua t C, qua ti ch c thnh phn mt chiu I
0
.
V s c mt ca t C nn khi D thng, C c np vi hng s thi gian np
t
n
= (r
S
+ r
D
)C, khi D ngt, C phng qua ti vi hng s thi gian phng: t
p
= R
t
C. V ni tr
ngun r
s
v in tr thun ca diode D l r
D
rt nh so vi tr ti: (r
S
+r
D
) << R
t
nn t
n
<<
t
p
, ngha l trong 1 chu k in mng thi gian t C c np rt nh so vi thi gian t C
phng qua ti nn in p trn ti bin i rt t. Diode D ch thng khi in p dng tc thi
ca ngun u
s
t trn ant ca n vt in p u
c
nn xut hin gc ct u ca xung dng i
0
, 2u
l thi gian thng ca diode D. u ph thuc r
s
; r
D
v R
t
.

( )
s D
t
r r
R
t
u
+
=
3
(3.11)
in p mt chiu trn t C (trn ti) c tnh bng:

c M
U U U cosu = =
0
(3.12)
Rt

~

Us

D
i
0

I
0
U
0
C

i
0~
+

b)

uC
UM

uC

C np C phng

U
0
i
0

I
0
2u

t
t
t
2t
Hnh 3.4: S chnh lu 1pha na sng ti dung tnh (a)
v dng in p trn ti, thi gian dn ca diode D (b)

rS

a)

38
Khi h ti (R
t
= ) u = 0 v U
0hm
=U
M

U
0hm
l in p mt chiu trn ti khhi h Rt.
in p ngc ln nht t ln diode D trong trng hp h ti (R
t
= ) l:

D ng max M
U U U = = 2 2 2 (3.13)
S chnh lu 1 pha na sng c u im l n gin nhng nhc im ln l:
H s gn sng g ln, tn s gn sng nh f
g
= 50Hz = f mng nn kh lc san bng v
dng trung bnh qua van nn ln I
tbv
= I
o
nn s chnh lu loi ny rt t c dng trong
cc thit b in t v trong cng nghip, nhng l c s ta hiu nguyn l vn hnh ca b
chnh lu.
3.2.1.2. Chnh lu 1 pha ton sng
1) Chnh lu 1 pha ton sng vi th cp bin p c im gia
a) Ti thun tr (hnh 3.5a)

Bin p 1 pha vi th cp ra im gia to ra 2 in p xoay chiu u
2a
, u
2b
c bin
bng nhau v ngc pha nhau t vo 2 diode, khin chng thay nhau lm vic trong c chu
k. Nh vy mi na th cp bin p cng vi 1 diode lin kt l mt s chnh lu 1 pha
na sng. Do y l 2 s chnh lu 1 pha na sng mc ni tip lm vic lch nhau
180
0
(hnh 3.5).
Gi s khi et = 0 t, u
2a
bn chu k dng th D
1
thng, D
2
kha, c dng i
2a
t a
D
1
R
t
0.
Hnh 3.5: S chnh lu 1 pha ton sng th cp bin p c im gia vi
ti tr (a) v dng sng u vo, ra in p ngc trn diode (b).
i
0

U
0
U
0
i
2b

u
1~
u
2a
0
Rt

a
b
i
2a

u
2b
a
b
D
1
D
2
a)

b)
u
2a

u
2

U
2M
u
2b

et
2t t
I
2M
-U
2M
0
i
0

I
0
0
i
2a
i
2b

et
et
u
0

0
u
Dng

-u
Dng1

-2U
2M
U
0

39
Khi et = t 2t, u
2b
l bn chu k dng th D
2
thng , D
1
kha, c dng i
2b
t b
D
2
R
t
0.
Dng qua ti trong 1 chu k: i
0
= i
2a
+ i
2b
l 2 xung dng mt chiu, m = 2. Tn s gn
sng ca in p trn ti f
g
= 2f =100 Hz. in p trn ti:
t
n , ...
u i R U u
=
= = +
0 0 0 0
2 4
, u
0
bao
gm thnh phn mt chiu U
0
v v s cc thnh phn xoay chiu t bc 2, 4... tr ln. Nu
b qua tn hao trn bin p v diode ta c:

T /
M
M
U
U U si n t.dt , U
T
e
t
= = =
}
2
2
0 2 2
0
2 2
0 9 (3.14)
Dng mt chiu qua ti:

t t
U , U
I
R R
= =
0 2
0
0 9
(3.15)
in p hiu dng trn ti:
( )
2
2
2
2 2
0
2
2
= = =
}
T /
M
t M
U
U U si n t dt U
T
e (3.16)
T (3.7) v (3.9) ta tnh c h s dng sng (FF) v h s gn sng (G) ca s
chnh lu 1 pha ton sng:

2
0 2
1 11
0 9
= = =
t
U U
d ,
U , U

2
1 0 482 = = g d , hoc 48,2%.
in p ngc ln nht t ln diode l:
M
U
2
2 .
Cc dng sng ca in p vo, dng chnh lu v in p sau chnh lu vi ti thun
tr v trn hnh 3.5b.
b) Ti dung tnh (hnh 3.6a)
Khi c C // R
t
v gi tr ca C sao cho
e
= <<
c t
X R
m c
1
vi s hnh 3.6a th (m=2), ta
s c b chnh lu ti dung (hnh 3.6a). Khi c C, cc thnh phn xoay chiu ca in p
sau nn i
0~
s c ni tt qua t C, qua ti R
t
l thnh phn mt chiu I
0
.
Khi ti dung tnh th cc diode ch thng khi gi tr dng tc thi ca in p th cp
t vo ant ca chng vt gi tr u
c
, mi diode ch thng trong thi gian
2u < 180
0
, u l gc ct ca xung dng, gi tr u ph thuc t s ca tng tr bin p v diode
vi in tr ti.

40

Dng sng in p trn ti v xung dng chnh lu nh hnh 3.6 (b).
- in p mt chiu trn ti:

M
U U cos U cos u u = =
0 2 2
2 (3.17)
- in p ngc ln nht t ln diode:

D ng max M
U U U = =
2 2
2 2 2 (3.18)
c) Ti tnh cm (Hnh 3.7a)
Khi ta mc ni tip vi ti mt cun chn L
ch
, cun chn c tr s in cm L
ch
sao cho
ch
L ch t
X m L R e = >> v in tr thun cun chn
ch
L t
r R << , ta s c b chnh lu ti cm, v
khi c L
ch
th thng c t lc C// R
t
, loi b trit cc thnh phn xoay chiu ca in p
gn sng. Vi chnh lu c cun chn L
ch
, cc thnh phn xoay chiu ca dng chnh lu s
b tn hao ht trn L
ch
, trn ti R
t
ch c thnh phn mt chiu I
0
, U
0
nh hnh 3.7b.
B qua tn hao trn bin p v diode, ta c in p mt chiu trn ti theo cng thc:
in p mt chiu trn ti:
t
= =
M
U U , U
0 2 2
2
0 9
Dng mt chiu trn ti: = =
t t
U , U
I
R R
0 2
0
0 9
(3.19)
in p ngc ln nht t ln diode: = =
D ngc max M
U U U
2 2
2 2 2
i
2a
i
2b

uC
et
U
0

i
0

I
0
2u et
b)
Hnh 3.6: S chnh lu 1 pha ton sng th cp bin p c im
gia vi ti dung (a) v dng sng trn ti (b)
a)
u
2
D
2
D
1
i
0~

U
1~
a
0
b
i
0
i
2a
i
2b
C U
0
Rt

+
I
0

u
2
41

So vi s chnh lu 1 pha khng iu khin na sng dng bin p th s chnh
lu 1 pha ton sng th cp bin p c im gia c nhng u im:
Trong bin p khng c thnh phn mt chiu nn li bin p khng b bo ha do
dng mt chiu gy nn.
Bin p lm vic 2 ln trong 1 chu k, nn hiu sut s dng bin p cao.
Tn s gn sng f
g
= 2f = 100Hz (in p gn sng ch cha cc hi chn) nn lc
san bng d hn, vi cng yu cu h s gn sng (g) trn ti nh nhau th chnh
lu 1 pha ton sng c tr s cc linh kin lc ch bng mt na ca chnh lu 1
pha na sng.
Vi ti tr v cm, in p mt chiu ra ln v dng trung bnh qua diode nh.

t bv
I
I =
0
2

Nhc im l: in p ngc t ln van ln v phi c bin p ngun.
2) Chnh lu cu 1 pha (hnh 3.8)
S chnh lu cu 1 pha gm: ngun xoay chiu u vo (c th dng bin p 1 pha
hoc khng), 4 diode ni theo s cu, v ti vi 3 loi ti khc nhau.

u
2

I
0
u
2a
u
2b

et
2t t
U
2M
u
0

U
0
0
et
et
i
0
U
0
/R
t
i
2a

b)
i
2b

i
2a

Hnh 3.7: Chnh lu 1 pha ton sng ti cm (a) v dng sng
in p u vo, u ra ca b chnh lu v trn ti (b).
U
0
L
ch
u
2a

a
0
b
D
2
a)
D
1
i
0

i
2a
i
2b
C
u
2b

u
0

U
0
u
1
u
2
a i
2a
b i
2b
D
1
D
2
D
3
D
4
i
0 +

Rt

Rt

C

Rt

C

Lc
h
Hnh 3.8: S chnh lu cu 1 pha vi cc ti khc nhau
42
Khi na chu k dng ca u
2
, ng vi a(+), b(-), D
1
, D
3
thng, c dng i
2a
t a D
1

ti D
3
b. Na chu k m ca u
2
, ng vi b(+), a(-), D
2
, D
4
thng, c dng i
2b
t b D
2

ti D
4
a.
Trong 1 chu k ca in p u
2
, dng ti i
0
= i
2a
+ i
2b
, s xung dng qua ti m = 2; f
g
= 2f.
Cc dng sng ca in p, dng in trn ti ca s cu 1 pha ging nh s
chnh lu 1 pha vi th cp bin p c im gia.
- Vi ti tr v cm:
M
U U , U
t
= ~
0 2 2
2
0 9 (3.20)
- Vi ti dung:
in p mt chiu trn ti: U U cosu =
0 2
2 (3.21)
hm
U U =
0 2
2 (R
t
= u = 0)
D ngmax M
U U U = =
2 2
2

3.2.2. Chnh lu ba pha khng iu khin
Cc s chnh lu 3 pha lm vic vi mng in 3 pha. y l cc b chnh lu cng
sut ln, thng c cng sut ln hn 15 kW.
3.2.2.1. B chnh lu 3 pha na sng
S chnh lu kiu ny cng c th dng bin p hoc khng, ty theo cc yu cu
ca ti.
Nu khng dng bin p, th s lm vic trc tip vi in p mng 3 pha c dy
trung tnh.
Nu s cn c bin p cch ly, th cc cun s cp ca bin p 3 pha c th ni theo
hnh sao hoc tam gic, ty theo in p mng v in p danh nh ca cun s cp. Cn 3
cun th cp phi ni theo hnh sao c dy trung tnh (hnh 3.9a).
in p cc pha lch nhau 1 gc 2t/3. Nh vy s sut hin nhng khong thi gian
in p 2 pha k cn c cng gi tr (ti et = t/6, 5t/6, 3t/2...), do 1 diode bt k ca pha
no mun thng th in p dng t vo ant ca diode pha phi vt in p cc pha
khc. Vy ti mi khong thi gian ch c mt diode thng. Mi diode thng lin tc trong
thi gian 2t/3.
Trn hnh 3.9b v dng sng in p ngun u2a, u2b, u2c, in p sau nn, thi gian
dn ca cc diode v in p ngc t ln cc diode vi ti thun tr.
Mt chu k in p mng, s lm vic 3 ln vi ti, c 3 xung dng qua ti,
m = 3, tn s gn sng ca in p sau nn f
g
= 3f.
43

* Vi ti tr v ti cm v b qua tn hao trn bin p, diode:
- in p mt chiu trn ti: ( )
/ m
M M
m m
U U cos t.d t U si n
m
t
t
e e
t t
= =
}
0 2 2

Vi m = 3:
M
U U , U
t
= ~
0 2 2
3 3
1 17
2
(3.22)
- in p hiu dng t trn ti l:
( )
2 2
2 2
0
1 2
2 2
| |
= = +
|
\ .
}
/ m
t m M
m m
U U cos t.d t U si n
m m
t
t t
e e
t t

Vi m = 3, ta c:

2 2 2
3 1 2
0 84 1 19
2 3 2 3
| |
= + = =
|
\ .
t M M
U U si n , U , U
t t
t
(3.23)
- H s dng sng:

0
1 02 = ~
t
U
d ,
U
hay 102%
u
0
t
3

t 2
3

t

U
D
t
6

t 5
6

t 3
2

t | |
+
|
\ .
2
6

2
3
M
U
b)
u
2a
u
2b
u
2c

et
u
2
U
2M
et
et
D
1
D
2
D
3
D
1

t 2

u
2c
u
2b
i
2b
i
2c
Ti
A
B
C
u
2a
i
2a
D
1
D
2
D
3
i
0

a)
Hnh 3.9: Chnh lu 3 pha na sng
(a) v dng sng trn ti v in p
ngc trn diode (b)
u
0
44
- H s gn sng:

2 2
1 1 02 1 0 2 20 = = = = g d , , %
* Vi ti dung tnh, b qua tn hao trn bin p diode:
- in p mt chiu trn ti:
0 2 2
2 = =
M
U U U (3.24)
- in p ngc ln nht t ln diode l:

D ng max M
U U U , U = = =
2 2 0
3 6 2 1 (3.25)
3.2.2.2. B chnh lu 3 pha cu (3 pha ton sng)
y l kiu chnh lu rt ph bin trong cc b ngun cng sut ln. Kiu chnh lu ny
c th vn hnh vi bin p hoc khng, ty theo yu cu ca ti . Nu vn hnh vi bin p
th cc cun th cp ni hnh sao khng dy trung tnh nh hnh 3.10. in p 3 pha t vo
b chnh lu l in p dy:
sin
sin
sin
2 2
2 2
2 2
3 3
2
3 3
3
2
3 3
3
= = e
t | |
= = e
|
\ .
t | |
= = e +
|
\ .
ab a M
bc b M
ca c M
u u U t
u u U t
u u U t

1) Vi ti thun tr

S chnh lu cu 3 pha dng 6 diode, c chia lm 2 nhm; Nhm I gm D
1
, D
3
,
D
5
ch lm vic khi cc u a, b, c du dng, cn cc diode nhm II (D
4
, D
6
, D
2
) lm vic
khi in p ti cc u a, b, c du m. Ti bt c thi im no, dng in chnh lu cng
thng lin tip qua 2 diode thuc 2 nhm khc nhau. Thi gian lm vic ca mi diode nhm
ny s ln lt lm vic vi 2 diode ca nhm kia. Cc dng sng v thi gian dn ca cc
diode nh trn hnh 3.11.

A
B
C
ia
u
0
D
1
D
3
D
5
u
1A

u
1B

u
1C

u
2a

u
2b

u
2c

a

b

c
ib
ic
Rt

D
4
D
6
D
2

Hnh 3.10: Chnh lu cu 3 pha
+

45

Vy mi chu k in p mng c 6 xung dng qua ti m = 6, tn s gn sng f
g
= 6f.
Mi diode thng lin tc trong thi gian 2t/3.
B qua tn hao trn bin p v diode, ta c in p mt chiu trn ti:
( )
/
M M
U U cos t .d t U , U
t
e e
t t
= = =
}
6
0 2 2 2
0
6 3 3
3 2 34 (3.26)
T (3.22) v (3.26) ta thy s 3 pha cu l 2 s 3 pha na sng mc ni tip v
lm vic lch nhau 180
0
.
- Tr s ca in p hiu dng trn ti:

( )
( )
6
2
2
2
0
2 2
6
3
3 9 3
1 6554
2 4
=
| |
= + =
|
\ .
}
/
t M
M M
U U cos t.d t
U , U
t
e e
t
t
(3.27)
- in p ngc ln nht t ln diode l:
Hnh 3.11: Cc dng sng v cc thi gian dn ca cc diode
ucb uab uac ubc uba uca
0 et
0
et
0
et
0
et
D
5-6
D
6-1
D
1-2
D
2-3
D
3-4
D
4-5
u
0

2
3
M
U
t/3 t/2 2t/3 t 4t/3 5t/3 2t
t/3 2t/3 t 4t/3 5t/3 2t
t/3 t 2t
iD
1

2
3
M
t
U
R
2
3
M
t
U
R
ia
46

D ngmax M
U U U , U = = =
2 2 2
3 6 2 45 (3.28)
2) Vi ti dung
B qua tn hao trn bin p v diode, ta c in p mt chiu trn ti:

M
U U , U = =
0 2 2
3 2 45 (3.29)
3) Vi ti cm
Cc gi tr in p ging nh ti in tr.
Dng trung bnh qua mi diode vi cc loi ti:

t bv
t
I U
I
R
= =
0 0
3 3
(3.30)
+ S ny c u im:
- Nu dng vi bin p vo, th trong cc cun dy bin p khng c dng mt chiu,
nn li st khng c tn hao mt chiu, hiu sut bin p cao.
- in p mt chiu cao.
- Tn s gn sng ln, h s gn sng rt nh nn d lc san bng.
- Dng trung bnh qua diode nh.
Nn cc b chnh lu 3 pha u dng s cu.
3.2.3. Chnh lu mt pha c iu khin
Cc b chnh lu c iu khin l cc b chnh lu c van nn l thyristor. Do thyristor
mun thng phi c tn hiu kch khi (m cng), v vy ta c th iu chnh dch pha gia
tn hiu kch khi vi in p mng, nh m in p mt chiu u ra b chnh lu iu
chnh c.
3.4.1. B chnh lu 1 pha na sng c iu khin vi ti thun tr
Chng ta hy xem xt s hnh 3.12(a):
S c th dng bin p hoc khng, 1 thyristor vi ti b chnh lu l thun tr. Khi
iu khin to ra chui xung kch khi thyristor, m gc lch pha gia xung kch khi U
K

vi in p vo U
2
c th iu chnh c.
Khi et = 0 t l na chu k dng ca U
2
, a (+), b (-), T
1
c phn cc thun,
nhng T
1
cha thng ngay ti et = 0 v cha c xung iu khin, m T
1
thng ti
et = o. T
1
thng t o t. Trong thi gian ny c dng
T
i
1
qua ti, n et = t, T
1
tt v U
2
i
cc, bt u sang bn chu k m, v
T
i
1
= 0 cc dng sng ca U
2
, U
K
, u
0
,
T
i
1
(i
0
) v in p
t trn thyristor nh s hnh 3.12(b), thi gian t khi bt u bn chu k dng cho n
khi thyristor c kch khi ti et = o, c gi l thi gian tr; v o c gi l gc tr hay
gc dch pha, hay gc kch khi. S hnh 3.12 c in p ra v dng ti l ngt qung, 1
chu k c 1 xung dng qua ti nn m = 1 v tn s gn sng f
g
= f.
47
- B qua tn hao trn cc linh kin, ta c in p mt chiu U
0
trn ti:
( ) ( )
M
M
U m
U U si n t.d t cos
t
o
e e o
t t
= = +
}
2
0 2
1
2 2
(3.31)
Nu iu chnh cho o bin i t 0 t, ta c: U
0
bin i t
M
max
U
U
t
=
2
0
n
mi n
U =
0
0 .
- Gi tr in p hiu dng trn ti:

( )
2 2
2
1
2
1 2
2
=
| |
+
|
\ .
}
t M
2M
U U si n t.d t
U si n
=
t
o
e e
t
o
t o
t t
(3.32)

S chnh lu ny c hiu sut thp, c h s gn sng cao, tn s gn sng thp, nn
trong cc b ngun vin thng khng dng kiu chnh lu ny.
Hnh 3.12:
a) S chnh lu 1 pha na
sng c iu khin vi ti tr.
b) Cc dng sng ca s .
U
2M
u
2
0
0
2t
et
et
et
et
et
0
t 2t
o
0
t 2t
o
0
0
2t o
UK

U
2M
u
0
iT
u
0
/Rt

uT
-U
2M
b)

Khi iu
khin
a

b

T
1
uT
U
1
U
2
u
0
Rt

a)

i
0
o
48
3.4.2. Chnh lu mt pha ton sng c iu khin
Nu l chnh lu 1 pha c iu khin th trong thc t thng dng s mt pha ton
sng c iu khin nh 2 s hnh 3.13(a) hoc (b).
Hai s chnh lu 1 pha ton sng c iu khin trn hnh 3.13 c nguyn l hot
ng nh nhau. Khi iu khin to ra cc xung iu khin m cc thyristor T
1
, T
2
. Gc
dch pha gia xung iu khin vi in p dng ca u
2
trn ant mi thyristor c th iu
chnh c nh b quay pha trong khi iu khin. gn sng ca in p ra ca s
chnh lu c iu khin l ln nn nht thit phi s dng mt lc u tin l LC. Diode b D
mc trc cun chn theo hng ngc, c tc dng duy tr dng in chy qua ti l lin tc
ngay c trong nhng khong thi gian khng c thyristor no thng.
Cun chn L
ch
c gi tr in cm Lch sao cho e = >>
ch
L ch t
X L R 2 , v in tr thun tn
hao ca cun chn <<
ch
L t
r R .

Vi iu kin ca cun chn nh vy, cng vi diode b D ta c dng v p trn ti
l mt chiu thun ty.
Nguyn l lm vic ca s chnh lu c m t bng cc dng sng trn hnh 3.14.
Khi bt u bn chu k dng ca u
2
t vo ant ca T
1
, nhng T
1
cha thng ngay t
et = 0, v cha c xung iu khin, n t e o = , c xung iu khin, T
1
mi thng. Khi T
1

thng c dng
T
i
1
chy qua L
ch
v ti, cun chn L
ch
c tch ly nng lng di dng t,
diode b D lc ny phn cc ngc, T
1
thng t t e o t = , khi et =t ; T
1
ngt v u
2
= 0 v
Hnh 3.13: Cc s chnh
lu 1 pha ton sng c iu
khin.
a) S vi th cp bin p
c im gia.
b) S cu.
Khi
K

u
1
a

b

0
u
2
u
2
T
1
T
2
iT
iT
D

u
0
C

Rt

I
0
Lch

i
0
U
0
a)

Khi
K

C

Rt

i
0
T
2
T
1
D
1
D
2
D

Lc
h
I
0
i
D
u
1
u
2
b)

U
0
49
bt u bn chu k m ca u
2
. Khi T
1
tt nhng T
2
cha thng v cha c xung iu khin,
dng
T
i
1
qua L
ch
mt t ngt lm xut hin trn L
ch
mt sc in ng t cm c du (+) bn
phi L
ch
v du (-) bn tri L
ch
khin diode b D c phn cc thun nn thng, xut hin
dng i
D
do L
ch
phng qua ti, qua diode D, lm cho dng I
0
qua ti lin tc. Diode D s thng
cho n t e t o = + th T
2
thng, li c dng
T
i
2
qua L
ch
, qua ti v L
ch
li c tch nng
lng. T
2
thng cho n et = 2t , u
2
= 0, kt thc 1 chu k ca in p mng, v khi T
2
tt th
D li thng, xut hin dng i
D
qua ti, D thng cho n khi T
1
thng.

Qua th dng sng trn hnh 3.14 ta thy dng qua ti
T D T
I i i i = + +
1 2
0
l lin tc v
bng phng, khin in p mt chiu trn ti l lin tc.
B qua tn hao trn bin p, diode v cun chn L
ch
ta c in p mt chiu ra trn ti:
( ) ( )
M
M
U m cos
U U si n t.d t cos , U
t
o
o
e e o
t t
+
= = + =
}
2
0 2 2
1
1 0 9
2 2
(3.33)
Hnh 3.14: Cc dng sng ca s
chnh lu 1 pha ton sng c
iu khin.
u
2
U
2M
0

t 2t
o
et
et
et
et
et
et
et
u
k
o t (o + t) 2t
o t
(o + t)
2t
o t
(o + t)
2t
t
(o + t)
o
U
0
u
0
0

i
T1
U
0
/R
t
i
T2
U
0
/R
t
i
D
i
0

I
0
0

0

0

50
Khi ta iu chnh cho o bin i t 0 t ta s c in p mt chiu trn ti bin i
t
max
U , U =
0 2
0 9 n
mi n
U =
0
0 .
- in p hiu dng trn ti:

( )
2 2
2
2
2
2 2
=
| |
+
|
\ .
}
t M
2M
m
U U si n t.d t
U 1 si n
=
t
o
e e
t
o
t o
t
(3.34)
3.2.4. Chnh lu ba pha c iu khin
3.4.3. Chnh lu 3 pha na sng c iu khin
Cc b chnh lu 3 pha c iu khin, cung cp in p mt chiu trn ti cao, gii iu
chnh ca in p mt chiu rng, tn s gn sng ca in p u ra ln do gn sng
nh so vi cc b chnh lu c iu khin 1 pha. Do cc b chnh lu 3 pha c iu khin
thng c s dng nhiu trong cc b ngun cng sut cao v gii iu chnh in p rng.
B chnh lu 3 pha na sng c th dng bin p hoc khng, nu dng bin p th cc
cun th cp phi ni hnh sao c dy trung tnh nh hnh 3.15.

B chnh lu c iu khin yu cu ti tnh cm cao nn cun chn L
ch
c gi tr sao cho:
ch
L ch t
X L R e = >> 3 ;vi diu kin ny th dng qua ti l lin tc v bng phng. Vi s ny th
mi thi im ch c 1 thyristor thng. Khi thyristor no thng l in p dng t ln ant ca
n vt in p dng ca pha k cn v c kch khi, ni cch khc thyristor no thng th n
c phn cc thun v c kch khi. Nh vy T
1
khng thng ti t /6 m thng ti t /6 + o .
Khi c dng i
a
qua ti. T
1
thng n khi T
2
c kch khi ti 5t /6 + o th T
1
tt v lc ny
in p dy u
ab
(= u
a0
-u
b0
) l m, T
1
phn cc ngc. T
2
thng c dng i
b
qua ti. T
2
thng cho
dn khi T
3
c kch khi ti et = 3t /2 + o th T
2
tt v lc ny u
bc
(= u
b
- u
c
) l m, T
2
phn cc
ngc. T
3
thng, c dng ic qua ti. T
3
thng cho n khi T
1
c kch khi tr li v bt u 1
chu k tip.
Hnh 3.15: S chnh lu 3 pha na sng c iu khin.
ib

A

B

C

0

u
0
U
0
C

Rt

Lc
h

i
0
I
0
a

b

c

ia

ic

T
1
T
2
T
3
+

51

Hnh 3.16 m t dng sng in p vo, in p sau nn, dng qua cc thyristor, dng
ti v thi gian dn ca mi thyristor.
Ta thy dng ti
a b c
i i i i = + +
0
l lin tc v bng phng v ti cm. Tn s gn sng
ca in p sau nn u
0
l f
g
=3f.
in p mt chiu trn ti c tnh theo cng thc:
( )
M M
U U si n t.d t U cos
t
o
t
o
e e o
t t
+
+
= =
}
5
6
0
6
3 3 3
2 2
(3.35)
vi o bin i t 0 90
0
.
in p hiu dng trn ti tnh theo cng thc:

( )
5
6
2 2
6
3
2
1 3
2
6 8
+
+
=
+
}
t M
M
U U si n t.d t
= 3U cos
t
o
t
o
e e
t
o
t
(3.36)
Hnh 3.16: Cc dng
sng ca in p vo,
in p sau nn v
dng ti ca b chnh
lu 3 pha na sng c
iu khin vi ti cm.
T
3
T
1
T
2
T
3
ua
0 ub
0
uc
0
ua
0

et
u
0
o
t/6
t/6+o
t
2t et
et
et
et
et
t/6+o 5t/6 +o
t
2t 3t
t/6+o 3t/2+o
0

ia
(iT
1
ib
(iT
2
ic
(iT
3
i
0
I
0
a
I
-

52
B chnh lu 3 pha na sng c iu khin c nhc im l trong cun th cp bin p
c thnh phn mt chiu nn thng t c s dng trong thc t.
3.4.4. B chnh lu cu 3 pha bn iu khin
B chnh lu kiu ny thng c s dng trong cc ngnh cng nghip c yu cu
cng sut cao ti 120 kW. B chnh lu kiu ny cho h s cng sut cao, gc tr o iu
chnh c trong phm vi rng t 0 t, do in p mt chiu trn ti iu khin c
trong phm vi rng, ngoi ra gn sng ca in p trn ti l khng ng k.
S b chnh lu vi ti tnh cm nh hnh 3.17.

S dng 3 thyristor T
1
, T
2
, T
3
cng vi 3 diode D
2
, D
3
, D
1
lm thnh b chnh lu cu
3 pha c iu khin. Diode b D m bo dng qua ti lin tc khi khng c thyristor no
thng.
Nguyn l hot ng ca s c m t theo th dng sng trn hnh 3.17 vi gc
o = 90
0
. Trong thi gian t /6 s et < 7t /6, T
1
phn cc thun v u
ac
bn chu k dng (u
ac
=
u
a0
- u
c0
) v T
1
c kch khi ti et = t /6 + o ,th T
1
v D
1
dn, c dng
T
i
1
t a T
1
ti
D
1
C. Lc ny D phn cc ngc. n et = 7t /6, u
ac
bt u bn chu k m, T
1
tt,
T
i
1
v khng v D bt u dn, dng i
D
chy t phi L
ch
ti D tri L
ch
.
n et = 5t /6 + o , T
2
c kch khi v u
ba
= u
b
-u
a
ang bn chu k dng nn T
2

v D
2
thng, c dng
T
i
2
chy t b T
2
ti D
2
a, diode b D li tt, T
2
, D
2
thng cho
n et = 11t /6 th tt v in p dy u
ba
bt u v bn chu k m, lc ny D li thng v c
dng i
D
qua ti. D thng cho n et = 9t /6 + o , th T
3
c kch khi v u
cb
= u
c
- u
b
bn
chu k dng nn c T
3
v D
3
thng, c dng
T
i
3
chy t C T
3
ti D
3
b, thi gian
T
i
3
chy th D li tt. T
3,
D
3
thng

cho n 15t /6 th tt.V u
cb
tr v chu k m v D li dn
cho n khi T
1
c kch khi chu k k tip.
A

B

C

u
0
C

R
t
L
ch
0
I
a

b

c

T
1
T
2 T
3
D
2
D
3
D
1
D

U
0
+

Hnh 3.17: S chnh lu 3 pha cu bn iu khin.
53

Vy trong 1 chu k:
T T T D
i i i i i = + + +
1 2 3
0
.
V tr s
T T T D
I I I I I = = = =
1 2 3
0
.
Nu khng c diode b D th T
1
, D
1
s phi thng lin tc cho n khi T
2
c kch
khi ti et = 5t/6 + o v tc dng ca diode b D do T
1
v D
2
m nhim.
- Nu o s t/3 th mi thyristor dn vi lu l 2t/3 v diode D khng c tc dng.
- Nu in p cc pha l:
( )
( )
a M
b M
c M
u U si n t
u U si n t /
u U si n t /
e
e t
e t
=
=
= +
0
0
0
2 3
2 3

Hnh 3.18:
Cc dng sng ca s
chnh lu ton sng
3 pha c iu khin ti
cm vi gco = 90
0
.
9
6
t
o +
15
6
t

2
t
11
6
t
T
3
D
3
T
1
D
1
T
2
D
2
ua
0
ub
0
uc
0
ua
0

et
et
et
et
et
iT
1, D1

iD

I
0
0

6
t
2
t
t
7
6
t
3
2
t 2t

D
D

D

T
3
D
3
ua
0
ub
0
uc
0
et
ucb

uac

uba

ucb

2
t
o

6
t
o +

7
6
t
6
t
o +

7
6
t
u
0

et
iT
2, D2

5
6
t
o +
iT
3, D3

i
0
et
54
Th cc in p dy tng ng s l:

( )
( )
( )
ac a c M
ba b a M
cb c b M
u u u U si n t /
u u u U si n t /
u u u U si n t /
e t
e t
e t
= =
= =
= = +
0 0
0 0
0 0
3 6
3 5 6
3 2

Trong U
M
l in p nh ca in p pha ni theo hnh sao.
Ta xt cc trng hp i vi cc tr s khc nhau ca gc o.
+ Khi gc o > t /3 th in p ra sau nn (u
0
) l khng lin tc (nh hnh 3.18), v in
p mt chiu U
0
trn ti c tnh theo cng thc sau:

( ) ( ) ( )
( )
ac M
M
U u d t U Si n t d t
3 3
= U cos
t
t
t
t
t o o
e e e
t t
o
t
+ +
= =
+
} }
7
6
6
7
6
6 0
6
3 3
3
2 2
1
2
(3.37)
- in p mt chiu ra trn ti ln nht khi o = 0, ta c:

max M
U U
t
=
0
3 3
(3.38)
- in p hiu dng trn ti tnh theo cng thc:

( ) ( )
( )
7
6
6
2 2
6
3
3
2
3 1
2
4 2
+
=
+
}
t M
M
U U Si n t d t
= 3U si n
t
t
t
o
e e
t
t o o
t
(3.39)
+ Khi o s t /3 th in p ra sau nn (u
0
) l lin tc.
- in p mt chiu trn ti U
0
:
( ) ( )
ac M
U u d t U
t
t
o
o
e o
t t
+
+
= = +
}
5
6
6
0
3 3 3
1
2 2
(3.40)

( ) ( )
( )
5
6
6
2 2
6
3
3
2
3 1
2
4 2
+
+
=
+
}
t M
M
U U Si n t d t
= 3U si n
t
t
o
t
o
e e
t
t o o
t
(3.41)
- Tn s gn sng ca in p sau nn f
g
= 3f.

55
3.4.5. B chnh lu cu 3 pha iu khin ton phn
S kiu chnh lu ny trn hnh 3.19.

Hnh 3.19: S chnh lu 3 pha cu iu khin ton phn
S ny dng 6 thyristor v ti tnh cm. Nguyn l hot ng c m t trn biu
dng sng trn hnh 3.20.
Cc Thyristor c kch khi thng cch nhau t /3 v mi thyristor thng lin tc
trong thi gian 2t/3 theo th t sau:
T
1
, T
6
thng t
( )
6
t
o + n
( )
2
t
o + , c dng
,
T
i
1 6
qua ti.
T
1
, T
2
thng t
( )
2
t
o + n
( )
5
6
t
o + , c dng
,
T
i
1 2
qua ti.
T
2
, T
3
thng t
( )
5
2
t
o + n
( )
7
6
t
o + , c dng
,
T
i
2 3
qua ti.
T
3
, T
4
thng t
( )
7
2
t
o + n
( )
11
6
t
o + , c dng
,
T
i
3 4
qua ti.
T
4
, T
5
thng t
( )
11
2
t
o + n
( )
13
6
t
o + , c dng
,
T
i
4 5
qua ti.
T
5
, T
6
thng t
( )
13
6
t
o + , c dng
,
T
i
5 6
qua ti.
Vy 1 chu k c 6 dng lin tc qua ti, m = 6, tn s gn sng f
g
= 6f.
Nu in p cc pha l:
( )
( )
a M
b M
c M
u U si n t
u U si n t /
u U si n t /
e
e t
e t
=
=
= +
0
0
0
2 3
2 3

Th cc in p dy tng ng s l:
T
1
T
3
T
5
T
4
T
6
T
2
C
Rt

U
0
u
0
Lch

O
a
b
c
+

56

( )
( )
( )
ab a b M
bc b c M
ca c a M
u u u U si n t /
u u u U si n t /
u u u U si n t /
e t
e t
e t
= = +
= =
= = +
0 0
0 0
0 0
3 6
3 2
3 2


( ) ( ) ( )
ab M
M
U u d t U Si n t d t
3 3
= U cos
t
t
t
o
o
t
t o o
e e e
t t
o
t
+
+
+ +
= = +
} }
2
6
2
6 0
6
3 3
3
(3.42)
Khi o bin i t 0 90
0
ta c U
0
bin i t
M
U
t
3 3
n 0.
6
t

6
t
o +

2
t
o +

3
2
t
2t
ub
0
T
5,6
T
1,6
T
1,2
T
2,3
T
3,4
T
4,5

T
ua
0
uc
0
0

et
0

et
et
et
T
1
T
3
T
5
T
6
T
2
T
4
T
6
UM

o
ucb uab uac ubc uba uca
ucb
U
0
u
0
t
iT
5,6
iT
1,6
iT
1,2
iT
2,3
iT
3,4
iT
4,5
iT
5,6
0
t
U
R

i
0
Hnh 3.20: Cc dng sng: in p vo, in p sau nn, dng ti v thi gian
dn ca cc thyristor ca s chnh lu cu 3 pha iu khin ton phn
57

( ) ( )
2
6
2 2
6
3
3
1 3 3
2
4 8
+
+
= +
+
}
t M
M
U U Si n t d t
= 6U cos
t
t
o
t
o
e e
t
o
t
(3.43)
S ny c in p U
0
cao, c tn s gn sng ln
( )
6
g
f f = nn gn sng ca
in p sau nn l rt nh v lc san bng n gin. V vy s chnh lu cu 3 pha iu
khin ton phn c ng dng rng ri trong cc ngnh cng nghip c yu cu cng sut
ln.
3.3. CHNH LU BI P
Cn gi l chnh lu nhn p. Khi mun c in p mt chiu cao hn in p xoay
chiu u vo b chnh lu, th ta dng chnh lu bi p.
3.4.1. Chnh lu bi p na sng
S lm vic vi in p 1 pha, c th dng vi bin p hoc khng dng bin p ty
yu cu ca ti.
Gi s na chu k dng ca in p U
2
ta c a (+); b(-); D
1
thng, C
1
c np n gi
tr ln nht ca in p U
2
:
1
2 2
2 = =
C M M
U U U .
Na chu k m ca U
2
, a (-); b (+), D
2
thng, C
2
c np, in p c np cho C
2
l:
2 1
2 2 2
2 2 2 = + = =
C M M C M
U U U U U (3.44)
in p mt chiu ln nht trn ti:
2
0
=
M C M
U U
K n tn hao ca bin p v 2 diode th:
U U cosu =
0 2
2 2 (3.45)
V trong 1 chu k ch c mt xung dng qua ti, nn m = 1; tn s gn sng f
g
= f.
Cc tr s ca C
1
, C
2
sao cho:
e
= <<
,
C t
,
Z R
C
1 2
1 2
1
.
c c in p mt chiu nn ra trn ti gp n ln U
0
ca s hnh 3.21 m khng
cn tng tng ng U
2
, ta s dng cch ghp n tng nh s hnh 3.22.
Hnh 3.21: S chnh lu bi p na sng
U
1
D
1
D
2
C
2

+
Rt

a
b
+
C
1
U
2
U
0
58

n tng tng
U n.U =
0 1

3.4.2. S chnh lu bi p mt pha ton sng
S chnh lu bi p mt pha ton sng, c th xem nh 2 s chnh lu bi p 1
pha na sng ni tip vi dch pha l 180
0
. (Hnh 3.23).
Vi s ny, yu cu tr s C
1
, C
2
sao cho:
,
C t
,
Z R
C e
=
1 2
1 2
1
th y l s bi p
vi ti dung.

Gi s na chu k u ca U
2
, a (+), b (-), D
1
thng, t C
1
c np vi
C
U U cosu =
1
2
2 . Na chu k sau U
2
i du, b (+), a (-), D
2
thng v C
2
c np
vi
C
U U cosu =
2
2
2 .
- in p mt chiu U
0
trn ti:

C C
U U U U cosu = + =
1 2
0 2
2 2 (3.46)
Khi b qua tn hao trn cc linh kin trong mch, ta c:

0 2
2 2 =
M
U U
S chnh lu ny, 1 chu k lm vic 2 ln vi ti (1 ln vi C
1
, 1 ln vi C
2
) nn s
xung dng chnh lu m = 2 f
g
= 2f.
Hnh 3.22: S bi p 1 pha na sng ghp n tng
Dn D'
n
U
1
U
2
C
1
+
C
2
+
Cn

+
D
1
D'
1
D
2
D'
2
C'
1
+ + +
C'
2
C'
n
Rt

U
0
Hnh 3.23: S chnh lu bi
p mt pha ton sng
U
1 U
2
D
1
D
2
Rt

U
0
C
1
C
2
+

+

a

b

59
Nu ta mun in p U
0
trn ti gp n ln in p mt chiu ca s trn, ta s dng
s bi p 1 pha ton sng ghp n tng nh s hnh 3.24.
Hnh 3.24: S bi p 1 pha ton sng ghp n tng
Vi s ny ta c
n tng 1 tng
U nU ~
0 0
. Tuy nhin vi cc s chnh lu bi p, khi s
tng n cng tng th hiu sut ca b chnh lu cng gim v tn hao trn cc linh kin nn ca
n tng cng tng, v vy cc s chnh lu bi p ch dng khi mun c in p mt chiu
ln hn, cn dng ti nh, cng sut mt chiu trn ti thp.

3.4. GHP NI TIP V SONG SONG CC B CHNH LU
3.4.1. B chnh lu cu 2 pha ni tip
Mt trong cc kiu chnh lu cng sut ln, lm vic vi in p 3 pha l dng 2 bin
th ngun bin i 3 pha thnh 2 pha. Nh s hnh 3.25.

d
Hnh 3.25: S chnh lu cu 2 pha ni tip (a) v
cc vc t in p cc cun s cp v th cp (b).
I
0
d
U U =
11
3
2

d
U U =
12
u
0

A
C Rt
U
0

Lch

B
C
a
b
c
D
1
D
4
D
5
D
8
A
B
C
U
11
U
12
U
21
U
22
a) b)
Tr
1

Tr
2

+

+

+
+

+
Rt

C
1

D
1
D
1
'
Cgh

C
1
'
D
2
D
2
' Dn Dn'
C
2
C
2
'
Cn Cn'
Cgh

Cgh

Cgh

. . . .
U
0
60
Hai cun s cp ca 2 bin p Tr
1
v Tr
2
ni vi ngun 3 pha 3 dy. Cc vc t in p
dy 3 pha l cc cnh ca mt tam gic u, in p t vo cun s cp ca Tr
2
l in p
dy U
BC
, U
12
= U
d
= U
BC
. in p t vo cun s cp ca Tr
1
, U
11
chnh l chiu cao ca
tam gic u,
d BC
U U U = =
11
3 3
2 2
. Nh vy U
11
v U
12
lch nhau 90
0
v do in p 2
cun th cp cng lch nhau 90
0
. Vi kiu ni mch ny bin 3 pha bn s cp thnh 2 pha
pha th cp. T s vng dy ca Tr
1
v Tr
2
khc nhau cho U
21
= U
22
v cng sut cp cho
ti ca 2 bin th bng nhau v bng na cng sut tng.
in p vo ca mi cu nn l in p mt pha, v y l 2 s cu 1 pha mc ni
tip v lm vic lch nhau 90
0
.
Bt c thi im no dng chnh lu cng thng qua 4 diode thuc 2 cu nn v 2 cun
th cp.
Trong 1 chu k c 4 xung dng qua ti, m = 4 v f
g
= 4f.
B qua tn hao trn bin p v diode, ta c in p mt chiu trn ti vi ti tr v ti
cm:
( )
/
M
m
U U si n t .d t , U
t
e e
t
= =
}
4
0 2 2
0
2 2 52 (3.47)
- Vi ti in dung: U U =
0 2
2 2 (3.48)
- Dng trung bnh qua diode:
tbv
I
I =
0
2
(3.49)

D ng max
U U =
2
2 (3.50)
U
2
l in p hiu dng cun th cp.
3.4.2. B chnh lu cu 2 pha song song
T s chnh lu hnh 3.25 ta c th s dng s chnh lu cu 2 pha song song nh
hnh 3.26.

b
Tr
2
Hnh 3.26: S chnh
lu cu 2 pha song song
u
0

c
Ti
B
C
d
D
1
D
4
D
5
D
8
U
11
U
12
U
22
U
21
i
0

A a
Tr
1
61
Do c im cch ni dy ca 2 bin p Tr
1
v Tr
2
ging s hnh 3.25 nn s 3.26
xem nh 2 s cu 1 pha ni song song, lm vic lch nhau 90
0
.
Vy 1 chu k c 4 xung dng chnh lu qua ti m = 4 v f
g
= 4f.
- in p mt chiu trn ti vi ti tr v ti cm:
( )
/
M
U U si n t .d t , U
t
e e
t
= =
}
4
0 2 2
0
4
1 26 (3.51)
- in p mt chiu trn ti khi c t lc C:
U U =
0 2
2 (3.52)

D ng max
U U =
2
2 (3.53)
- Dng trung bnh qua diode:

t bv
I
I =
0
4
(3.54)
3.5. B LC
3.5.1. B lc san bng
in p v dng in sau chnh lu l cc xung nn trong c cha cc thnh phn
mt chiu thun ty (U
0
, I
0
) v v s cc thnh phn xoay chiu (Eu
0~
; Ei
0~
). Ti ca b chnh
lu ch yu cu thnh phn mt chiu, cn cc thnh phn xoay chiu gy nn gn sng
ca in p trn ti, ta phi loi b cc thnh phn ny m bo mt in p mt chiu cp
cho ti vi gn sng cng nh cng tt, nht l i vi ti l cc thit b in t. Nhim v
loi b cc thnh phn xoay chiu sau nn m bo in p mt chiu trn ti c s gn
sng rt nh so vi gn sng ca in p sau nn l lc san bng, cc linh kin c cu
thnh lm nhim v lc san bng c gi l b lc mt chiu hay b lc san bng. V vy
sau chnh lu nht thit phi c b lc lm gim gn sng n mc cn thit m ti yu
cu.
nh gi tc dng lc ca mt b lc, ta coi b lc nh mt mng 4 u (hnh 3.27)
m li vo ca b lc c thnh phn mt chiu U
0v
v thnh phn xoay chiu
v
U
0
vi h s
gn sng u vo l
0
0
=
v
v
v
U
g
U
.

Hnh 3.27:
B lc
san bng
B lc san
bng
0
0
=
r
r
r
U
g
U
0
0
=
v
v
v
U
g
U
62
Ti u ra ca b lc ta nhn c in p mt chiu
r
U
0
v in p xoay chiu
r
U
0
,
vi h s gn sng u ra:
0
0
=
r
r
r
U
g
U
.
H s lc (hay h s san bng) ca b lc l:

0 0
0 0
= =

v v r
r v r
g U U
q .
g U U
(3.55)
Nu coi b lc l l tng (khng tn hao thnh phn mt chiu) th U
0v
= U
0r
, do :
v
r
U
q
U
=
0
0
q > 1.
H s lc ni ln cht lng ca b lc lm gim gn sng ti u ra bao nhiu
ln so vi gn sng u vo.
3.5.2. Cc loi b lc san bng
1) B lc LC
Hnh 3.28: B lc LC
B lc LC l b lc c dng thng dng nht trong cc b chnh lu cng sut va v
ln, nht l trong cc b ngun cung cp cho cc thit b vin thng. lc tt cc thnh phn
xoay chiu ca in p gn sng th cun chn phi c L
ch
sao cho:
XL
ch
= meL
ch
>> Rt
rL
ch
<< R
t

V gi tr ca C sao cho
1
C t
X R
m C e
= <<
Trong m l s xung dng chnh lu trong 1 chu k, m ph thuc s chnh lu .
e: tn s gc ca in mng.
L
ch
: in cm ca cun chn
r
Lch
: in tr thun dy cun cun chn
- Tnh ton cc tr s ca b lc:
* Tnh tr s C:
Theo yu cu ca ti, c cung cp in p mt chiu U
0
vi h s gn sng l g.
U
0~
, u
0

C
Rt
Lch
U
0

U
0~r

63
Vy:
t
g
R
m C
=
e

Vi s chnh lu c s dng (bit m)
Ta c:
t
g
C
m R
=
e

Vi f = 50Hz v C = [F]
Th 3200
t
g
C F
mR
= (3.56)
- in p xoay chiu u ra ca b lc LC

0~ 0~
1 1
. .
1
( )
( )
r v
ch
U U
jm C
jm L
jm C
e
e
e
=

H s lc q ca b lc LC
~
0~
1
( )
o v
ch
r
U
q m L m C
U m C
e e
e
= = + (3.57)
q = m
2
e
2
L
ch
C 1
V m
2
e
2
L
ch
C >> 1 nn b qua 1, ta c:
q = m
2
e
2
L
ch
C q (3.58)
* Tnh Lch:

2 2
( )
ch
q
L H
m C e
=
- Hiu sut ca b lc LC

1
1
ch
ch
t
L
L
L t
t
R
r
r R
R
q = =
+
+
(3.59)
Thng th
ch
L t
r R << nn hiu sut ca b lc LC cao v q t l vi m
2
e
2
nn hiu qu
lc rt cao.
Nhng cun chn tn s in li c th tch, trng lng ln v gi thnh t.
2) B lc hnh
gim nh mc gn sng ca in p ti u vo ca cc b lc LC v RC, ngi
ta ni thm mt t in lc C
1
trc b lc nh hnh 3.39 a,b.
64

Khi b lc hnh t c dng lm mt lc u tin th ti ca b chnh lu s mang tnh
dung. Trong nhiu thit b, gim nh kch thc ca b lc, ngi ta dng mt t kp thay
cho 2 t ring l C
1
, C
2
.
3) B lc nhiu mt
B lc nhiu mt c s dng khi yu cu c h s lc ln v khi b chnh lu phi
cung cp cho nhiu ti vi cc mc in p v gn sng khc nhau.

B lc nhiu mt c cu to gm mt lc u tin l LC mc ni tip nhau vi cc mt
lc RC. Vi b lc nhiu mt th h s gn sng u ra ca mt lc trc l h s gn sng
u vo ca mt lc k tip, khi h s lc ca c b lc l:

1
1 2
. .....
v
n
rn
g
q q q q
g
E
= = (3.60)
Trong : q
1
, q
2
... l h s lc ca tng mt lc ring r, khi q
1
= q
2
= ... qn = q, ta c:
q
E
= qn
V cc mc in p mt chiu, ta c:
U
01
> U
02
> U
03
> ... > U
0n

B lc nhiu mt c dng trong cc thit b in t c nhiu tng khuch i.
CU HI N TP
1. S chnh lu cu 1 pha ti tr, b qua tn hao bin p v it, U
0
= 15V. Hy tnh
in p th cp hiu dng, cc i? Bit in p t vo cun s U
1
= 220V v W
2
= 60.
Hy tnh |
M
trong li thp ca bin p, bit din tch mch t S = 10cm
2
.
R
Rt
C
1
C
2

(b)
Rt

(a)
C
2
C
1

Lc
Hnh 3.39: Cc b lc LC, RC, hnh t
gV

U
03
......................
C
1
q
1

C
2
q
2

Cn

qn
C
3
q
3

grn
Lch

U
01
U
02 U
0n
R
2
R
3
Rn
Hnh 3.40: B lc nhiu mt
65
Tnh dng cc i qua mi it, bit R
t
= 300O.
Tnh U
dngmax
?
2. S chnh lu 1 pha na sng ti dung, b qua tn hao bin p v it, U
2
= 40V,
R
t
= 10O. Tnh U
0
, U
dngmax
, I
tbv
.
3. Tnh hiu sut chnh lu ca s cu 1 pha ti tr v s chnh lu 1 pha na
sng ti tr (b qua tn hao trn bin p, it).
4. Cho s chnh lu nh hnh 3.41, ti thun tr, bit U
2a
= U
2b
= 40V; R
t
= 9O.
V dng sng, dng in, in p trn ti?
Tnh U
0
, I
0
, I
tbv
, f
g
, UD
ngmax
. B qua tn hao trn bin p v it.

5. Cho s chnh lu nh hnh 3.42. Hai bin p c s cp lm vic vi in p 3 pha.
Hai cun th cp c U
21
= U
22
v lch nhau 90
o
.

V dng sng U
0
v khong thi gian dn ca cc it.
Tnh f
g.

Tnh U
0
, I
0
, I
tbv
bit U
21
= U
22
= 60V, R
t
= 6O.
6. S chnh lu 3 pha na sng c iu khin, bit in p pha U
p
= 100V, ti tr.
Hnh 3.42
U
12

D
1
D
4

D
5
D
8

Rt U
0

U
21

U
22

U
11

A
B
C
d
c
b
a
Hnh 3.41
U
1

D
1
D
4

D
5
D
8

Rt U
0

U
2a

U
2b

66
V dng sng in p trn ti vi gc m o.
Xc nh U
0
trn ti ng vi o = 0
o
, 30
o
, 90
o
, bit in p ri trn Thyristor l 1,5V
7. - V dng sng in p trn ti v khong thi gian lm dn ca cc it ca s
chnh lu 3 pha ti tr.
- Tnh U
0
, I
0
, I
tbv
bit U
p
= 220V, R
t
= 10O. B qua tn hao trn ngun, it.
8. Tnh in p mt chiu trn ti, in p ngc ln nht trn it ca b chnh lu cu
3 pha vi ti cm v ti dung, bit U
p
= 220V.
9. - Tnh in p mt chiu trn ti ca s chnh lu cu 3 pha c iu khin ng vi
; ;
6 4 2
t t t
o = bit U
p
= 220V.
- Tnh U
Dngmax
?
10. Tnh L
ch
v C ca b lc LC trong b chnh lu cu 3 pha. Cho bit R
t
= 1O,
X
Lch
= 100O, q = 200.

Chng 4. B bin i in p mt chiu
67
CHNG 4: B BIN I IN P MT CHIU

4.1. GII THIU CHUNG
B bin i p mt chiu (BBA1C) hay gi y l b bin i xung in p mt
chiu, s dng cc ngt in bn dn s thch hp bin i p ngun mt chiu thnh
chui cc xung p, nh s thay i c tr trung bnh p ra V
0
(Hnh 4.1).

Hnh 4.1: M hnh b bin i in p mt chiu
V th BBA1C cn c gi l b bm in p. Dng p ra BBA1C thay i theo
theo chu k T gm thi gian c xung t
on
v khong ngh T - t
on
.
C cc nguyn l iu khin:
- iu ch rng xung (PWM Pulse Width Modulation) khi chu k T khng i,
thay i thi gian ng in t
on
. o = t
on
/T gi l rng xung tng i.
- iu ch tn s khi t
on
khng i, chu k T thay i.
- iu khin hn hp, khi c T v t
on
u thay i.
Hai phng php sau t thng dng trong thi gian gn y, n gn lin vi nhng mch in
c th, thng l n gin. Cht lng ca chng thng khng cao vi nhc im ln nht l tn
s lm vic ca h thng b thay i.
Trong mt s ti liu, cc b bin i xung in p mt chiu ng ngt ngun in cung
cp cho ti nh nh ngha trn c xp vo nhm FORWARD, phn bit vi cc b bin
i lm vic qua trung gian cun dy gi l FLYBACK. Ngoi ra, cn c mt s s c tng
qut khng cao, khng c trnh by trong chng ny.
4.2. B BIN I P MT CHIU LOI FORWARD
B bin i p mt chiu loi FORWARD c phn loi theo s phn t mt phng ti
m n c th hot ng. Mt phng ti, tng t nh mt phng c tnh c trong truyn ng
in, l tp hp cc im biu din tr trung bnh dng, p trn ti V
0
, I
0
; gm bn phn t nh
Hnh 4.2. Hnh 4.3 cho ta s b bin i p mt chiu loi FORWARD.
68

Hnh 4.2: Cc phn t mt phng ti

Hnh 4.3: S cc b bin i (a) mt phn t; (b) hai phn t; (c) bn phn t

Hnh 4.4:
4.2.1. B bin i lm vic mt phn t mt phng ti
Trn Hnh 4.3 (a) ngt in bn dn mt chiu S1, nh ta bit ch c th dn in mt
chiu t u + ca ngun. V th tr s tc thi p, dng ra v
o
, i
o
v tr s trung bnh ca
chng V
o
, I
o
ch c th dng, v b bin i nh vy ch lm vic c phn t th nht ca
mt phng ti.
69

Hnh 4.5:
Xt chu k ta xc lp - khi cc dng sng s lp li mi chu k, trn Hnh 4.5(a) trnh by
tn hiu iu khin ngt in S1. Tn hiu cao (hay 1) tng ng ngt in ng, thp (hay 0) l
ngt.
Ti t = 0, S1 ng. Phng trnh vi phn m t h thng:
o
o
di
V Ri L E
dt
= + + , vi iu kin ban u
min
(0)
o
i I = (4.1)
Gii ra : ( )
1 min
( )
t
o xl xl
i t I I I e
t
= vi
1
,
xl
V E L
I
R R
t
= = (4.2)
: hng s thi gian in t, I
xl1
: dng qua mch khi xc lp ( t).
( )
max 1 1 min
( )
on
t
o on xl xl
i t I I I I e
t
= = (4.3)
Khi t > t
on
, S1 ngt dng ti khng thay i tc thi, khp mch qua diode phng in
D2. Phng trnh vi phn m t h thng khi chn li gc thi gian:
0
o
o
di
Ri L E
dt
= + + , vi iu kin ban u
max
(0)
o
i I = (4.4)
Gii ra: ( )
2 2 max
( )
t
o xl xl
i t I I I e
t
= vi
2 xl
E
I
R
= (4.5)
70
V ( )
2 2 max min
( )
on
T t
o on xl xl
i T t I I I e I
t
= = (4.6)
(4.3) v (4.6) cho php tnh ra I
max
, I
min
v dng ca i
o
theo t nh hnh 4.5(b)
max min
(1 ) ( 1)
;
(1 ) ( 1)
on on
t t
T T
V e E V e E
I I
R R R R
e e
t t
t t

= =

V nhp nh dng ra:
max min
1
( )
2
I I I A = (4.7)
Tr trung bnh p ra:
.
on
o
t V
V V
T
o = = vi
on
t
T
o = (4.8)
V dng ra:
o
o
V E
I
R
= khi s dng nguyn l xp chng cho thnh phn mt chiu

ca p ra v
o
.
Tnh gn ng: Khi T << t, c th tnh gn ng khi cho i
o
thay i theo ng thng v
ly trung bnh p trn cc phn t ngoi t cm L trong (4.1) tnh o hm dng:
( ) (1 )
o
o o
di
L V E RI V V V
dt
o = + = =
T tnh c:
min max min
(1 ) (1 )
( )
o on on
V V
i t I i t I t I
L L
o o
= + = = +
v i
o
thay i theo ng thng, nn:
tr trung bnh dng:
R
E V I I
I

=
+
=
o
2
min max
0
(4.9)
v nhp nh dng: o o) 1 (
2 2
min max
=
= A
L
VT I I
I (4.10)
gi tr ny cc i khi
2
1
= o , lc
L
VT
I
8
= A (4.11)
Nhn xt: nhp nh dng khng ph thuc tr trung bnh dng ti I
o
v in tr ti R.
Khi E hay R tng, I
o
gim trong khi I A khng i. V I
min
= I
o
AI, dng in s gin on.
Khi I
o
< AI (hnh 4.5(c)). Khi dng gin on, trong mt chu k c khong thi gian i
o

= 0, v
o
= E, tr trung bnh p ra V
o
s tng bng ] ) ( [
1
0
E t T Vt
T
V
x on
+ = (4.12)
vi t
x
l khong thi gian c dng.
C th tnh c t
x
khi p dng cc cng thc t (4.7) n (4.10) cho chu k gi nh
bng t
x
(Hnh 4.6) v iu kin I
min
= 0.

71

Hnh 4.6:
ox
2
(1 )
2 2
x on on on
x x
x on
V E Vt t VRt LE
I I
R L t VRt LV
o
o o
+
= = A = => = =
+

V
2
2
on
x on
on
VRt LE
t t
VRt LV
+
=
+

Cng thc ny cng cho ta iu kin b bin i c dng gin on: l chu k T >
t
x
vi tx tnh theo (4.13).
V d 4.1:
a) Tnh cc thng s v v dng dng p trn ti ca BB p lm vic1/4 mt phng ti.
V = 100 [V], T = 100 [s], t
on
= 30 [s], R = 5 [O], L = 0,01 [H], E = 20 [V].
Gi s dng lin tc o = 30/100 = 0,3 ta suy ra:
6
100.100.10
(1 ) .(1 0, 3).0, 3 0,105[A]
2 2.0, 01
VT
I
L
o o

A = = =
V
o
= 100 * (30/100) = 30 [V],
I
o
= (30-20) / 5 = 2 [A],
I
max
= I
o
+ AI = 2,105 [A]
I
min
= I
o
AI = 1,895 [A] > 0 nn gi thit dng lin tc l ng.
Kim tra li:
0, 01
0, 002 [s]
5
L
R
t = = = , nn t (4.7) ta c:
I
min
= 1,8953546 [A], I
max
= 2,1053454[A] => AI = 0,1049954 [A]
Nh vy sai s gia hai cch tnh l khng ng k
Kim tra cc hng s thi gian: T (= 100E6 [s]) << (= 0,002 [s]) => ph hp vi gi
thit.
b) Gi s E thay i, tnh gi tr E dng tr nn gin on.
72
Bit rng AI khng thay i theo E, trng hp gii hn ca dng lin tc xy ra khi I
min
= 0
v I
o
= AI = 0,105 A (4.9) cho ta:
E = oV - R.I
o
= 30 5.0,105 = 29,475 [V]
Kim tra li, th gi tr E ny vo (4.13), ta c t
x
= 100 [s] = T.
Vy khi E > 29.475 [V] th t
x
< 100 [s] v dng bt u gin on.
4.2.2. B bin i lm vic hai phn t mt phng ti I v II
Trong Hnh 4.3(b), hai ngt in bn dn mt chiu lm vic ngc pha nhau: khi S1 ng,
S2 ngt v ngc li. K hiu: 2 1 S S =
Nh vy, cc ngt in S1, S2 v diode D1, D2 cho php dng ti i
o
chy theo hai
chiu, trong khi p ra ch c th dng: b bin i c th lm vic phn t th nht v hai.
Vic ng ngt o pha hai ngt in mc ni tip khng d dng trong thc t khi ta
thi gian turn on ca ngt in bn dn bao gi cng b hn thi gian turn off. Khi c th xy
ra ngn mch ngun tm thi khi ngt in turn off cha kp OFF trong khi ngt in turn on
ON (s trng dn). trnh hin tng ny ta cn thm vo mt khe thi gian ln (ph thuc
vo loi ngt in) c hai ngt in u kho lm trung gian cho qu trnh chuyn mch.
Kho st b bin i nh vi s lm vic mt phn t cho ra cng kt qu, cc cng
thc t (4.1) n (4.11) u c th p dng. Nhng cc dng in u c th ln hn hoc
nh hn 0, suy ra khng c ch dng gin on.
Cc dng dng p c v trn Hnh 4.7:

Hnh 4.7
Dng dng i
o
hnh (a) tng ng vi trng hp tr trung bnh dng ra I
0
>>0. diode D1
v ngt in khng c dng, thc t mch hot ng nh b bin i mt phn t.
Dng dng (b) xy ra khi sc phn in ti E xp x tr trung bnh p ra V
o
, tr trung bnh tin
v 0 v c 4 linh kin cng sut u tham gia dn in trong tng giai on nh trn hnh.
Dng dng (c) xy ra khi tr trung bnh dng ra I
o
<< 0. Ch c D1 v S2 lm vic

73
V 0
o
o o
V E
I E V
R
= < => > . Khi S2 ng, dng i

o
qua R, L, S2 v E c bin tng
dn. Cun dy c np nng lng. Khi S2 ngt, dng qua L khng thay i tc thi phng
qua D1 v ngun. Nh vy ti E d c sc in ng b hn ngun V nhng vn c th a
nng lng v ngun nh b bin i p mt chiu khi c tr s trung bnh p ra Vo thch hp
(Vo < E).
V d 4.2: Kho st BB p mt chiu hnh 4.3 (b) vi ngun V = 100 [V], sc in ng
ti E = 40 [V], R = 5 [O], L = 1 [mH], T = 100 [s]. V dng dng ra trong cc trng hp
rng xung tng i o ln lt l 0,5; 0,4; 0,3.
a) o = 0,5
6
3
100.100.10
(1 ) .(1 0, 5).0, 5 1, 25[A]
2 2.10
VT
I
L
o o

A = = =
Trung bnh in p ra: V
o
= 0,5.100 = 50 [V] => Io = (50 - 40)/5 = 2 [A]
Vy I
min
= 2 1,25 = 0,75 [A]; I
max
= 2 + 1,25 = 3,25 [A], tng ng vi trng hp
dng in dng (a) ca Hnh 4.7.
b) o = 0.4
6
3
100.100.10
(1 ) .(1 0, 4).0, 4 1, 2[A]
2 2.10
VT
I
L
o o

A = = =
o
= 0,4.100 = 40 [V] => I
o
= (40 40)/5 = 0 [A].
Vy I
min
= 0 1,2 = 1,2 [A]; I
max
= 0 + 1,2 = 1,2 [A], tng ng vi trng hp dng
in dng (b) ca Hnh 4.7.
c) o = 0.3
6
3
100.100.10
(1 ) .(1 0, 3).0, 3 1, 05[A]
2 2.10
VT
I
L
o o

A = = =
o
= 0,3.100 = 30 [V] => I
o
= (30 40)/5 = -2 [A].
Vy I
min
= 2 1,05 = 3,05 [A]; I
max
= 2 + 1,05 = 0,95 [A], tng ng vi trng
hp dng in dng (c) ca Hnh 4.7.
B bin i tng p
BB p mt chiu lm vic 1 phn t ch c th cung cp p u ra b hn p ngun
nn cn c tn gi l BB gim p
Xt BB hai phn t Hnh 4.3b), khi lm vic phn t th II, ch c S2 v D1 lm
vic (v li trn Hnh 4.8). Nng lng ca sut in ng ti E c tr v ngun (i
o
<
0) nhng ta vn c trung bnh p ra V
o
b hn p ngun V. S Hnh 4.8 c gi l BB
tng p, khi p ca pha cung cp (p ti) V
o
b hn p ngun V (pha nhn).
74

Hnh 4.8: B bin i tng p
BB tng p, ta nh nghi t
on
l thi gian dn in ca S2, cng thc tnh tr trung bnh V
o

s thay i, tng ng vi vic thay th o bng (1-o) trong (4.8)
Ta c V
o
= V.(1 o)
(4.8*)
dng qua ti I
o
= (V
0
- E)/R < 0 tng ng V
0
< E
Lu rng (4.8*) ch ng khi dng ti i
o
lin tc, nh vo kh nng tch tr nng lng
dng dng in ca t cm L. Khng c sc in ng cm ng ca L, dng khng th chy t ti E
c in p b v ngun V ln c.
BB tng p l mt s trong nhm BB p mt chiu dng FLYBACK, c kh nng tng
gim p vi t cm L c xem nh l mt thnh phn ca BB.
4.2.3. B bin i lm vic bn phn t mt phng ti
Hnh 4.3c) cho ta s cu ca b bin i lm vic bn phn t mt phng ti. Ta cng c
th s dng s vi hai ngun nh Hnh 4.9. Trong s cu, cc ngt in S1, S4 cung cp in
p dng v cc ngt in S2, S3 cung cp in p m cho ti. Cc diode song song ngc vi ngt
in m bo dng in lu thng hai chiu. C th l lun tng t chng minh kh nng lm
vic bn phn t mt phng ti ca s s dng hai ngun: S1 cung cp in p dng cho ti
v in p m bng S2.
75

Hnh 4.9: BB lm vic bn phn t mt phng ti (dng s 2 ngun)
Cc s lm vic 4 phn t mt phng ti dng cung cp cho ti
- p o chiu (lm vic phn t I hay III)
- Dng v p o chiu lm vic I,II hay III, IV
- Dng v p c du bt k ph thuc yu cu.
tng ng vi nhiu cch iu khin cc ngt in b bin i. C hai cch chnh:
- iu khin chung.
- iu khin ring.
*) iu khin chung
C 1 4 2 3 S S S S = = = . Khi dng p ra lun c hai cc tnh: v
o
dng khi S1 ng v
m khi S1 ngt, dng sng nh Hnh 4.10a), nhng p ra l dng c bin thay i trong
khong -V n +V, lm cho nhp nh dng in tng gp i so vi dng xung mt cc tnh
0-V.
max min
(1 )
2
I I VT
I
L
o o
A = = (4.14)
vi o = t
on
/T; t
on
l thi gian ON ca S1, S4.
Phng n iu khin chung cho php thay i lin tc p ra t m sang dng khi thay
i rng xn tng i t
on
/T:
( ) ( )
1
. 2 1
o on on
V V t V T t V
T
o = = (

(4.15)
Dng ti c th dng hay m ph thuc vo tng quan gia trung bnh p ra V
o
v
sut in ng ti E ( theo nguyn l xp chng)
0
o
V E
I
R
=
76
*) iu khin ring
Mi lc ch ng ngt mt trong hai nhm S1, S4 cung cp p dng v S2, S3 cung cp p
m cho ti, dng sng p ra ti thun tr c v trn Hnh 4.10b).
Phng n iu khin ring cung cp xung mt cc tnh cho p ra. Cng thc tnh ton nh
trng hp BB mt phn t. C th thy d dng rng BB cung cp p o chiu, lm vic
phn t I ay III ph thuc vo cp ngt in lm vic v nh vy cch tnh ton s ging nh
kho st BB mt phn t
a) Dng sng p ra iu khin chung b) Dng sng p ra iu khin ring
Hnh 4.10: Dng sng p ra cho trng hp iu khin chung v ring
u im: nhp nh dng, p ra b hn, s iu khin n gin.
Nhc im: Ngoi vic dng ti khng th o chiu, s iu khin cn c tn hiu
chn du cho in p ra (tng ng vi chn nhm ngt in lm vic). iu ny s lm h
thng khng lm vic c hay tc ng chm quanh im p ra bng khng.
Trong thc t c nhiu s iu khin khc nhau nm gia hai nguyn l iu khin
trn, du hiu phn nhm l iu khin ring lun yu cu tn hiu chn cc tnh p ra
trong khi iu khin chung lun lun c th thay i p ra lin tc quanh gi tr 0 [V].
4.2.4. B bin i lm vic ti hai phn t I v IV
Kho st s Hnh 4.4 ti RLE: Cc ngt in S1 v S4 cng ng v cng kha vi
rng xung tng i o = t
on
/T.
Khi cc ngt in bn dn ch dn in 1 chiu, dng qua ti ch c th l chiu +
quy c: i
o
>0
S1, S4 dn in: V
o
= V > 0
S1, S4 kha: Nng lng tch tr trong L cho php ti phng in v ngun qua cc diode D2
v D3: p ra v
o
= - V < 0.
Nh vy b bin i c dng p ra V, tu thuc vo tng quan thi gian gia xung p
dng v m m p ra c th dng hay m (Hnh 4.11).
77

Hnh 4.11: p, dng BB hnh 4.4 khi dng gin on
Tnh ton mch khi dng ti lin tc:
Khi c ti thch ng, dng ti lin tc: i
o
tng trong khong t
on
v gim (cha bng 0)
trong thi gian cn li ca chu k. Vy ta c dng p, dng ca BB 4 phn t v trung bnh
p ra c tnh theo (4.1.15) v nhp nh dng tnh bng (4.1.14). Tr trung bnh dng vn l
I
o
= (V
o
- E)/R. Lun nh l dng ra i
o
ch c th dng, khi I
O
gim, dng c xu hng tin
n gin on.
Khi dng gin on, cc tnh ton tr nn phc tp hn.
4.2.5. Sng hi p dng trn ti RLE
Sng hi in p
C th phn lm hai trng hp: dng lin tc v gin on. Khi dng lin tc, dng p ra ch
ph thuc rng xung tng i (. Khi dng gin on, dng p ra cn ph thuc sc phn in E.
Tuy nhin ch cn kho st trng hp dng in gin on , trng hp dng in lin tc tng
ng vi t
x
= T . Khai trin Fourier cho dng p ra v
o
Hnh 4.5c):
( )
1 1
sin cos
o o n n o n
n n
v V A n t B n t V v e e

= =
= + + = +

Vi ( ) sin
n n n
v V nt e = ,
2 2
n n n
V A B = + ,
1 n
n
n
A
tg
B

(
=
(

,
2
T
t
e =
V
o
tnh theo (4.12); A
n
, B
n
c th tch phn theo dng sng v
o
Hnh 4.5c), vi T = 2t.
( ) ( )
2 .2 / 2
0 0 .2 /
2
( ).sin .
1 1
.sin . .sin . .sin .
1 cos 1 cos
on
x
n
T
t T
o
t T
on x
A v t nt dt
T
v nt d t V nt d t E nt d t
V E
n t n t
n n
t t t
t
e
e e e e e e
t t
e e
t t
=
| |
= = +
|
\ .
=
}
} } }
,
( ) ( )
2
( ).cos . ... 1 sin 1 sin
n on x
T
V E
B v t nt dt n t n t
T n n
e e e
t t
= = =
}
,
78
Vy:
( ) ( )
( ) ( )
1 cos 1 cos
1 sin 1 sin
n on x
n on x
V E
A n t n t
n n
V E
B n t n t
n n
e e
t t
e e
t t
(4.16a)
Bin v lch pha ca sng hi bc n trng hp dng lin tc t
x
= T l:
2
1 cos
n on
V
V n t
n
e
t
= ,
1
sin
1 cos
on
n
on
n t
tg
n t
e
(
=
(

(4.16b)
4.2.6. Ghp song song cc b bin i
Tng t nh b ngun chnh lu, s dng song song cc b bin i c 2 tc dng
- Tng cng sut u ra thay v ni song song cc ngt in tng cng sut b bin i.
- Ci thin cht lng dng, p u ra v dng ngun cung cp khi iu khin lch
pha cc BB.
*) Tng cng sut u ra thay v ni song song cc ngt in tng cng sut b bin i.
Khi cng sut ti ln vt qu kh nng ca cc ngt in c sn, vic mc song song
nhiu ngt in p ng cng sut thit k tuy n gin nhng c nhiu hn ch: mch
phc tp, sn xut n chic, h s an ton khi tnh chn ngt in tng,... Vic ghp song
song nhiu b bin i cung cp cho mt ti tuy phc tp v nguyn l nhng s c nhiu u
im v k thut nh: module ho thit k, s dng ti u linh kin, cho php ng dng nhiu
thut ton iu khin tng cht lng u ra cng nh kh nng s dng ngun,
Hnh 4.12a) cho ta s hai BB cung cp cho mt ti, hai BB thng c thng s
hot ng ging nhau: cng V
o
, kh nng ti dng,... nhng lm vic lch pha chu k.
Chng c ni chung u vo v chung u ra qua cc cun khng c nhim v ri phn p
chnh lnh xoay chiu. Mi BB s dn dng ti.

a) Hai BB cung cp cho mt ti

b) Ci thin dng ngun bng b lc u
vo v iu khin lch pha cc b bin i
Hnh 4.12: Ghp song song cc b bin i

79
p trung bnh trn ti: v
o1
= v
o2
.(et - t) => V
o1
= V
o2
= V
o

p trn cun khng L: v
L
= (v
o1
- v
o2
)/2 ch c cc hi bi l 1, 3, 5,
C th chng minh d dng l p trn ti ch c hi bi chn, nghi l s nhp nh tn
s gc 2e.
*) Ci thin cht lng dng, p u ra v dng ngun cung cp khi iu khin
lch pha cc BB
Ta bit tn s lm vic ca BB cng cao th cc nh hng ca song hi bc cao ln
ti mt chiu cng b nhng tn s hot ng ca BB b gii hn bi kh nng ngt in.
Nh chng minh phn trn, khi iu khin lch pha chu k hai BB ging nhau ni
song song nhp nh dng p c tn s gp i tn s lm vic ca BB v nh vy cht
lng dng p u ra c ci thin.
Kh nng s dng ngun mt chiu cng c ci thin khi cc BB l ti ca chng
lm vic lch pha. Khi gi tr hiu dng ca dng ngun s tin gn n ga tr trung bnh
ca chng hn. Hnh 4.13 v dng dng cung cp cho 1 BB v 2 BB lm vic lch pha
chu k. Dng ngun l nhng xung hnh thang c rng bng khong dn ca ngt in S
nhng ta c th gi s xung dng c dng ch nht c bin l tr trung bnh dng ti
tnh ton d hn khi t cm ti L ln.

Hnh 4.13: Dng ngun dng i
n
ca mt v hai BB ging ht nhau lm vic song song lch
pha nhau 180
0

Sng hi bc cao lm cho ta khng tn dng cng sut ngun in, c th gim bt bng
mc lc LC u vo nh Hnh 4.12b).
4.3. B BIN I P MT CHIU LOI FLYBACK
Cc b bin i p mt chiu khi lm ngun cho cc thit b in t cn c thm b lc
LC (hay RC khi cng sut b) p ra phng. Trong cc b ngun xung hin i ta hay gp
b bin i loi flyback, n cho ra chui xung dng, qua trung gian cun dy np t u ra
thay v cc xung p nh BB dng FORWARD. B bin i p mt chiu xp vo loi
flyback khi chu k hot ng gm hai pha:
80
Pha 1: Ngt in ng (ON). Cun dy c np nng lng t ngun, ti s dng nng
lng tch tr trong t in song song ( t lc u ra ).
Pha 2: Ngt in ngt (OFF). Cun dy chuyn (phng) nng lng qua ti v np nng
lng vo t in.

Hnh 4.14: Cc s BB dng Flyback
Nh vy, nguyn tc hot ng b bin i loi FLYBACK i nghch vi cc b bin
i xung in p dng FORWARD, khi ti c ni ngun khi ngt in ng (ON) v s
dng nng lng tch tr khi ngt in kha.
C 4 s c trnh by trn Hnh 4.14:
(a) B bin i o cc tnh. (c dng cho kho st c bn v c s phn t l t nht).
(b) S tng gim p.
(c) S tng gim p c bin p.
(d) S tng p.
S (a) c s phn t t nht, (b) c cng hot ng vi (a) nhng khng o cc tnh,
(c) tng t nhng s dng bin p v (d) tng p.
BB tng p c kho st mc 4.4.2 l trng hp ring ca s hnh (d), khi
bin p t ngu ch cn li cun dy s cp.
4.4. MCH TT SCR
Ngoi h transistor hay GTO c th ng ngt theo mch li cc ngt in tm hiu
chng 1, ta c th s dng SCR lm ngt in bn dn lm vic vi in mt chiu khi s
dng thm mch ph, gi l mch tt SCR. Cng ging nh chnh lu, qu trnh tt SCR
cn c gi l qu trnh chuyn mch hay chuyn mch.
Nguyn l tng qut ca mch tt SCR l to ra mt ng dn in tm thi thay th
81
SCR , lm cho dng qua n v khng trong thi gian m bo tt t
q
> t
off
.
4.4.1. V d mch tt SCR
Mch hai trng thi bn dng SCR (Hnh 4.15).
Ti t = 0, kch T1. T1 dn in v C c np qua T1 v R2 n p ngun V vi cc
tnh nh hnh v. T2 c in p phn cc l vC , bng p ngun V khi dng np t tin v 0.
Khi kch T2, T2 dn in v t in C t p m vo T1. T1 khng th dn in v phc
hi trng thi kha. T in C c np qua R1 n gi tr p ngun V vi du ngc li,
chun b lm tt T2 khi T1 c kch. Thi gian T1 b t p m c gi l t
q
- thi gian
m bo tt SCR, cn phi ln hn t
off
l thi gian cn thit cho SCR phc hi kh nng kha.

Hnh 4.15: Mch hai trng thi bn dng SCR
Nh vy tt SCR, ngi ta c th dng t in vi in tch c du thch hp, to ng
dn in tm thi lm cho dng qua SCR v khng trong thi gian tq SCR phc hi kh nng
kha.
4.4.2. S chuyn mch cng cc SCR
Vic tt SCR bng cch dng t in t p m vo AK nh v d trn c gi l
chuyn mch cng cc SCR.
kho st ta xem s tng qut Hnh 4.16 vi gi thit dng ti I
o
khng i trong
thi gian chuyn mch, V l p trn t trc thi im chuyn mch. Khi kha K ng,
(0)
c
v v V
t
= = lm T tt. dng ti I
o
chuyn qua mch C.
Phng trnh cho v
C
khi chuyn mch:
; (0) ( )
C o
o C T C
dv I
I C v V v v t t V
dt C
= = => = =
Khi t = t
q
l thi gian m bo tt T1, p trn t bng 0:
( ) 0 .
C q o q
v t CV I t = => =
82

Hnh 4.16:
Khi C np n gi tr ngun, dng qua n v 0, T2 t tt , dng ti khp mch qua Df. T
in C c nng lng cho chu k lm vic mi. Nh vy , in lng C .V tch tr trong C phi
duy tr c dng ti trong thi gian m bo chuyn mch t
q
hay: t
q
= V.C / I
o
.
B bin i lm vic mt phn t dng SCR
Trong mch Hnh 4.17a), T1 l SCR chnh dn dng in ti, T2 l SCR ph, ch lm
nhim v tt (cn gi l chuyn mch) SCR chnh. kho st mch, ta c gi thit dng ti
khng thay i:
i
o
= I
o
l hng s trong thi gian mch tt SCR hot ng.

Ngun c ni vo lu C c np n p ngun V theo cc tnh nh hnh v qua
in tr R. R c gi tr rt ln, khng nh hng n hot ng sau ny ca mch.
Ti t = 0, kch T1. T1 dn in. dng qua n gm dng ti Io v dng phng in ca t C
qua T1, D
p
v L. y l mch cng hng LC khng c tn hao khi ta xem cc linh kin l l
tng. Dng phng in ca C l hnh sin v p qua n c dng cos.
Khi in p trn t in o cc tnh (ngc vi du trn Hnh 4.17a)), diode D
p
khng
cho php n x theo chiu ngc li v nh vy t in C chun b c in tch c du
thch hp tt T1 khi T2 c kch, nh s nguyn l Hnh 4.16. Thi gian o cc tnh
t in l chu k dao ng / 2 LC t t = cng chnh l thi gian on ti thiu ca BB.
Khi kch T2, T2 dn v
T1
= v
C
< 0 : T1 tt v dng ti Io chuyn qua C. C c np bng
dng ti I
o
, nh nguyn l chuyn mch cng nh kho st.
83
iu kin c s chuyn mch thnh cng l
o q
i t
C
V
> , t
q
> t
off
l thi gian tt ca SCR T1.
Khi C np n gi tr ngun V, dng qua n v 0, T2 t tt, dng ti khp mch qua D
f
.
T in C c nng lng cho chu k lm vic mi. Thi gian off ti thiu ca BB l
2.t
q
, d cho p trn t c th thay i t - V n + V, m bo tt c SCR chu k tip.

(a) BB mt phng ti dng SCR v cc dng sng

b) v c) Cc m rng ca mch tt hnh a)
Hnh 4.17:
Nhc im ln ca mch ny l phi c pha o cc tnh p trn t in, iu ny lm
tng tn hao nng lng, gim tn s lm vic cho php ca mch. Cng h chuyn mch
cng cn c cc mch trn hnh Hnh 4.17 b) v c) khng s dng cun dy v cng khng c
pha o cc tnh p trn t in. T tt C nm gia cu SCR, chng c kch theo chu
trnh thch hp cung cp p m tt SCR chnh (s b). S (c) c iu khin phc tp
hn khi dng ti ln lt chy qua cc nhnh ca cu SCR.
Trong thc t, trong mch cn nhiu t cm ni tip vi SCR, c th l t cm ca
ngun in, dy dn hay l cun dy c thm vo chng nhng t bin dng lm nh
hng kt qu tnh ton trn.
M rng chuyn mch cng cho BB lm vic hai phn t
84
Khi BB lm vic nhiu hn mt phn t, cn c diode phng in song song ngc
vi SCR. V d nh s Hnh 4.18. Mch ny hot ng tng t nh s Hnh 4.17a)
nhng cc tnh ton cho b chuyn mch cng thay i hon ton.

Hnh 4.18: M rng ca mch tt Hnh 4.17a) cho BB lm vic nhiu hn mt phng ti
chun b tt SCR chnh T, t in cng c np vi cc tnh nh hnh v. Khi SCR
ph Tp c kch, dng qua t C chia lm hai nhnh: cung cp dng ti IO thay cho SCR chnh
T (m bo T tt), khp mch qua D to thnh mch dao ng LC. Ta c th nhn xt nhim v
ca L l hn ch tc phng in ca C qua D. V dng ti IO ang chy qua L khi Tp c kch,
gi tr ban u ca dng qua C l I
o
lm thay i thi gian x t C.
L l cun khng c tr s rt b, ch tham gia qu trnh chuyn mch m khng nh hng
hot ng ca ti.
4.4.3. S chuyn mch mm cc SCR
B bin i lm vic hai phn t dng SCR dng chuyn mch mm

Hnh 4.19:

85
V chuyn mch cng cn mt t in ni song song vi SCR, BB c th lm vic
nhiu hn mt phn t, ta cn thm vo cun khng L bn cnh diode phng in D th
chuyn mch mm diode phng in c ni song song ngc trc tip vi SCR.
Kt qu ca cch ni ny l ch c dng qua SCR gim v 0 khi chuyn mch, v
AK

khng c p m. y l c trng ca h chuyn mch mm.

Hnh 4.20:
Nguyn l hot ng:
Trong BB hai phn t, mt ngt in bn dn cu to t hai SCR: S1 (S2) bao gm
SCR chnh dn dng in ti T1 (T2) v SCR ph T11 (T22). Cc linh kin ph LC s dng
chung. Trn s c ghi du cc tnh in p trn t C thi im t
0
, khi chun b tt SCR
T1 ang dn dng ti I
o
. Khi kch T11, dng phng in ca C (mi tn i) mt phn cung
cp cho ti I
o
, mt phn khp mch qua D1, T11 to thnh dao ng LC.
cui bn k dao ng LC, p trn t o cc tnh, chun b tt T2 pha k tip bng
vic kch T22. Dng dng, p qua cc phn t c v trn Hnh 4.20, khi i
C
> I
o
dng qua
SCR T1 bng 0. Vy thi gian c i
C
> I
o
chnh l thi gian m bo tt t
q
cho T1.
Kho st l thuyt chuyn mch mm:
Kha K ng mch vi p dng qua cc phn t mch nh trn Hnh 4.21.
86

Hnh 4.21: Mch in tnh ton chuyn mch mm

Hnh 4.22: dng dng qua t in vi cc t s A khc nhau nhng cng tq.

Ti t = 0, dng qua L khng thay i tc thi nn dng qua SCR vn bng I
o
, ta c
phng trnh:
0
C L
v v + =
Vi
C
L
di
v L
dt
= v
C
C
dv
i C
dt
=
=> 0
C
C
dv
v LC
dt
+ =
iu kin u (0)
2
C
V
v =
(0) (0) 0
C
L
dv
i
dt
= =
Gii ra: sin
2
C
V L
i t
C
e = c dng hnh sin
87
vi bin
max
2
V L
I
C
= v tn s gc
1
LC
e =
Nh gii thiu trn, thi gian m bo tt t
q
tng ng vi thi gian i
C
> I
o
, ph
thuc hai thng s L, C (hay I
max
v e).
max
max
.
2
cos cos
2
q
o
o q
t
I
I I t
I
e
e
= => =
iu kin ti u c chn l ti thiu nng lng tch tr trong L (hay C) v bin
trung gian cho kho st l A = I
max
/I
o
.
Ta c:
2
max
1
. 1
. . . .
2 4 2cos (1/ )
q
o
t
L I
W V I A
A
= = t l vi
1
( )
8cos (1/ )
A
h A
A
=
h(A) --> min A = 1,55 C th suy ra:
. .
2 1, 786
( )
o q o q
I t I t
A
C
V g A V
= = v
. .
1 1
0,185
2 . ( )
q q
o o
V t V t
L
I A g A I
= =
Tn s dao ng ring ca mch LC:
0
1 ( ) 0, 277
2 . 2
q q
g A
f
t t LC t t
= = =
rng xung ti thiu (m bo iu kin chuyn mch) l bng chu k dao
ng hay tn s cc i c th ca BB l f
0
v p ban u trn t l V/2.
4.5. NG DNG
L thit b cung cp ngun mt chiu thay i c, cc ti ca BB xung p mt chiu
cng chnh l ti ca s chnh lu nhng BB li lm vic vi ngun mt chiu. V vy,
phm vi ng dng ca hai BB tht s khng trng nhau. Cc ng dng ca BB xung p
mt chiu c th chia lm hai nhm:
- S dng ngun mt chiu p khng i, c th l li in mt chiu hay accu. y l
cc ng dng c trng ca BB xung p mt chiu. Ngy nay ngoi cc li mt chiu ca
h thng giao thng cng cng bng in xy dng t lu, ch ph bin cc ng dng
ngun l accu hay pin.
- S dng ngun mt chiu chnh lu diode t li xoay chiu cng nghip. Nhm ny
khai thc cc u im ca BB xung p mt chiu m chnh lu iu khin pha khng th c
c l mch iu khin v ng lc n gin, h thng tc ng nhanh v cht lng iu
khin d dng nng cao.
4.5.1. Nguyn l iu khin b bin i
C hai nguyn l thng dng: iu rng xung v so snh c tr.

88

a) Nguyn l iu rng xung

b) So snh c tr
Hnh 4.23:
*) Nguyn l iu rng xung (PWM)
B bin i c th xem nh mch khuch i tn hiu:
UK --> Mch Pht xung --> BB --> p ra V
o
.
Mch pht xung so snh tn hiu iu khin UK v sng mang u
B
, thng c dng
tam gic. T c th suy ra quan h gia rng xung tng i o v U
K
. Khi thay i
U
K
p ra V
o
s thay i, v vic gi u ra c tnh mong mun s ph thuc vo h thng
iu khin t ng.
*) S dng b so snh c tr (so snh Smit)
Kt hp mch thay i rng o v vic iu khin h thng. B so snh c nhim v
so snh c tnh u ra (phn hi) v tn hiu t ng ngt ngt in:
Khi t > Phn hi + A : HT tc ng ngt in tng u ra.
t < Phn hi - A : HT tc ng ngt in gim u ra.
vng tr A c thm vo gim tn s ng ngt. H thng K ny n gin, cht
lng u ra c m bo nhng khng th rt cao v u ra lun cn sai s, tn s ng
ngt thay i theo ti. Nguyn l ny cn c cc tn: r le c tr, iu khin theo p (dng)
u ra.
S iu khin vng kn BB xung p mt chiu hon ton ging vi chng lu iu
khin pha, cng c vng phn hi dng in v vng phn hi in p (hay tc khi i
tng iu khin l ng c). Nhng khi s dng cc s hn dng cc i, kha tc thi
cc ngt in khi dng vt qu gi tr gii hn, c th b qua vng dng in khi cng sut
ti b.
4.5.2. iu khin ng c mt chiu
Vi kh nng thay i c in p mt chiu u ra, b bin i p mt chiu c th
s dng cho iu khin ng c mt chiu nh cc s chnh lu . C hai nhm ng dng
ln:
* S dng cho cc phng tin vn ti s dng truyn ng in. N thay th cc h
89
thng s dng in tr v cc ngt in c kh c in, c thm kh nng thu hi li ng
nng chuyn ng khi cho ng c lm vic trong ch hm ti sinh (tr thnh my pht,
a nng lng tr v li mt chiu).
* iu khin ng c cng sut nh lm b phn chp hnh trong cc h thng t ng
(truyn ng ng c chp hnh - servo motor). Cc u im l:
- Tc ng nhanh nh lm vic tn s cao, s n gin, kch thc b.
- D dng thc hin s lm vic bn phn t (o chiu ng c) so vi chnh lu
SCR.
Ngi ta cng dng BB p mt chiu cho iu khin dng qua cc nam chm in
lm vic trong ch tuyn tnh, nguyn l cng tng t nh iu khin ng c.
4.5.3. Cc b ngun mt chiu - cp in hay n p xung
B cp in cn gi l b ngun cho cc thit b in hay in t dng trong o lng,
iu khin, thng tin hay dn dng , thng c cc yu cu cao v chnh xc, sng hi hay
nhp nh u ra. Trc y, cc b cp in thng s dng mch tuyn tnh: in li
c gim p qua bin p cch ly, chnh lu diode, lc phng v mch n p tuyn tnh gi
n nh p u ra. S khi ny tuy m bo cht lng u ra cao nhng c mt s nhc
im: trng lng cao v s dng bin p gim p 50Hz, hiu sut thp v tiu tn cng sut
qua phn t st p. Vic s dng b bin i p mt chiu khc phc hai nhc im ny
nhng b li mch in phc tp hn v cht lng u ra khng tt bng: n p km hn
v p ra khng tht s phng. C hai s khi chnh cho cp in xung:
a) S dng b bin i p mt chiu thay cho mch n p tuyn tnh
Hnh 4.24 cho ta s khi b cp in mt chiu, trong b bin i xung in p
mt chiu c s dng thay cho mch n p tuyn tnh. Hiu sut ca mch tng v phn t
cng sut lm vic trong ch ng ngt thay cho khch i. H thng loi ny thng gp
trong cc thit b sn xut cch y kh lu, khi bn dn ng ngt p cao cha ph bin.

Hnh 4.24:
b) Cp in mt chiu s dng bin p tn s cao: (v d Hnh 4.25)
Hiu qu kinh t ca cp in ng ngt thc s r rng khi s dng cc b bin i
xung pha p li in th cao. Bin p cch ly li - ti lm vic tn s cao c kch
thc, trng lng b v gi thnh h lm thay i hn b mt thit b. B bin i xung p
mt chiu c hai dng: transistor hay MosFET.
90

Hnh 4.25:
- Khi s dng b iu rng xung, phi s dng b bin i lm vic bn phn t v kt
hp nguyn l y ko bin ra p xoay chiu - thc cht l xy dng b nghch lu, nh
c th ghp qua bin p tn s cao.
Mch iu khin gm c hai b phn cch ly in vi nhau: mt ly tn hiu phn hi t
ti v mt li mch cng sut c in p li.
4.5.4. Nghch lu
BB p mt chiu l c s xy dng b nghch lu: BB DC -> AC. V d BB
lm vic 4 phn t mt phng ti c th l b nghch lu mt pha khi tr trung bnh u ra
bng khng v thnh phn hu dng chnh l sng hi bc 1.
TM TT
Chng ny kho st cc BB in p mt chiu, gm nhiu s khc nhau. Bi
ging t trng tm vo BB dng FORWARD, l dng ph bin trong cng nghip. BB
dng FORWARD ng ngt ngun cung cp cho ti, p u ra l nhng xung p ch nht c
tr trung bnh thay i theo rng xung tng i o.
Cc cng thc quan trng cn nh l: tnh tr trung bnh, nhp nh ca p (hay dng)
u ra (hay ngt in). Vic kho st h thng BB p mt chiu - ti lun lun da vo
nguyn l xp chng. Ch dng gin on lun lun c t ra khi BB ch cho dng
chy mt chiu, hu qu ca n l p ra lun cao hn gi tr tnh ton. Khi thit k s b hay
tnh ton gn ng ta thng gi thit l dng ti lin tc bi ton c n gin.
Mc 4.4 gii thiu mch tt SCR gm hai nhm cng v mm. Mc 4.5 trnh by cc
ng dng ca BB in p mt chiu.

Chng 5. Nghch lu v bin tn
91
CHNG 5: NGHCH LU V BIN TN

5.1. GII THIU CHUNG
Nghch lu l b bin i in mt chiu ra xoay chiu vi in p v tn s u ra c
th thay i cung cp cho cc ti xoay chiu, phn bit vi nghch lu ph thuc l ch
c bit ca chnh lu iu khin pha, cho php chuyn nng lng t pha mt chiu v li
xoay chiu c p v tn s c nh khi gc iu khin pha > 90
0
c nhc n trong
chng 3. Nghch lu c ng dng rng ri trong cng nghip v dn dng, c th phn ra
lm cc nhm sau:
1. u ra tn s cng nghip (nh hn 400 Hz) khng i: cc b ngun xoay chiu bn dn
s dng lm ngun cho cc thit b in thay th in li. C th k b lu in (UPS -
Uninterruped Power Supply) cung cp ngun lin tc cho ti, b i tn cung cp in cho cc thit
b s dng ngun khc tn s li
2. u ra tn s cng nghip thay i: dng iu khin tc ng c xoay chiu,
lun c u vo l in li nn cn gi l bin tn.
3. u ra trung tn hay cao tn:
T 500 Hz n 25 KHz khi s dng SCR hay cao hn khi dng transistor l cc b ngun
cho cc cng ngh in: nung nng dng dng in cm ng trong mi trng dn in, hay chuyn
thnh rung ng siu m ca cc vt liu t gio. c trng ca nhm ny l h s cng sut ca ti
rt thp, cn mc t in song song nn ti c tnh cng hng.
dy tn s trn 25 KHz cn c cc b nghch lu 1 pha lm trung gian cho cc b bin i
p mt chiu khi mun s dng bin p tn s cao nhm gim trng lng v kch thc thit b.
Trong cng nghip cn c cc b dao ng cng sut hnh sin s dng n in t hay transistor,
lm vic tn s t 50 KHz n vi MHz dng cho ti cao tn hay nung nng in mi.
Khc vi cc BB hc, cc s nghch lu hot ng rt khc nhau. Ngay c khi cng
s ng lc, c th dng nhiu cch iu khin cho ra tnh cht khc nhau.
5.1. PHN LOI NGHCH LU
5.1.1. Nghch lu song song v ni tip
L cc dng nghch lu s dng SCR cho ng ngt, c t in mch ti m bo chuyn
mch. Trong mch in gm in tr R, t cm L v in dung C to thnh mch cng hng RLC,
lm cho dng qua SCR gim v 0 v SCR t tt. Hnh 5.1 bao gm hai mch nghch lu song song:
(a) l s cu, (b) l s ghp bin p; ( c) tng ng vi nghch lu ni tip.
92

Hnh 5.1: Nghch lu ni tip (c), song song ( (a) s cu, (b) s bin p im gia)
a) Nghch lu song song (Hnh 5.1a,b)
Dng sng cc phn t trn s Hnh 5.1a c v trn Hnh 5.2(b). Cc SCR 1 v SCR 4 c
cng dng xung kch cng nh SCR 2 v SCR3. Khi SCR 1 v SCR 4 dn in, t in C c np n
in p c cc tnh nh trn hnh v. in p ny s t in p m vo SCR 1 v SCR 4, lm tt chng
khi ta kch SCR2 v SCR3. T cm L u vo cch ly ngun v cu chnh lu, lm cho dng in
cung cp vo cu chnh lu khng thay i tc thi, trnh kh nng chp mch tm thi qua SCR 1 v
SCR2 (hay SCR 3 v SCR 4) khi cc SCR chuyn mch.
Do c t cm gia b nghch lu v ngun nn Tr s v dng p u ra thay i theo c tnh
ti. Trn Hnh 5.2(b), p ra khng cn dng xung vung v c th gn ging hnh sin khi ti c t cm
(ti RL).

Hnh 5.2: Dng p, dng ca nghch lu ni tip (a) v song song (b)
b) Nghch lu ni tip (Hnh 5.1(c))
Mch in Hnh 5.1(c) l dng n gin nht trong nhm mch nghch lu ni tip, c mch
tng ng l RLC ni tip khi SCR dn in. V d nh khi SCR 1 c kch, dng qua mch
s v khng khi p trn t in t gi tr cc i (c du nh trn mch in) v SCR s t tt. V
th mch cn gi l nghch lu chuyn mch ti. Khi SCR 2 c kch, t in s phng qua n v
dng v khng khi p trn t in o cc tnh, chun b cho chu k k tip - dng sng Hnh 5.2(a).
Hai mch nghch lu ny c dng lm b ngun trung hay cao tn (nhm th 3 trong
phn gii thiu). Nh vy, ngoi nhim v tt (chuyn mch) SCR, cc t in trong hai nghch lu
ny cn l mt phn ca ti, gp phn vo vic ci thin h s cng sut ca mch.
93
5.1.2. Nghch lu ngun dng v ngun p
a) Nghch lu ngun dng

Hnh 5.3: Nghch lu ngun dng
L mch nghch lu c L bng v cng u vo, lm cho tng tr trong ca ngun c
gi tr ln: ti lm vic vi ngun dng. Hnh 5.3 trnh by s nguyn l v mch tng
ng ca NL ngun dng mt pha ti RL. Dng ngun i
N
phng, khng i mt gi tr ti,
c ng ngt thnh dng AC cung cp cho ti:
S1, S4 ng: i
o
> 0 ; S2, S3 ng: i
o
< 0
Vy ti nhn c dng in AC l nhng xung vung c bin ph thuc ti.
b) Nghch lu ngun p

Hnh 5.4: Nghch lu ngun p
Hnh 5.4 trnh by s nguyn l v mch tng ng ca NL ngun p mt pha.
c trng ca NL ngun p l ngun c tng tr trong bng khng (l accu hay c in dung
rt ln u ra) c th cung cp hay nhn dng ti. Mt c trng khc l ngt in lun
c diod song song ngc nng lng t ti c th t do tr v ngun.
p ngun mt chiu c ng ngt thnh nhng xung p hnh vung c bin xc
nh cung cp cho ti.
5.3. NGHCH LU NGUN DNG
5.3.1. S mt pha
*) Kho st trng hp n gin: ti R, t cm ngun rt ln.
94
Mch in Hnh 5.1 (a) v (b) cho ta dng c bn ca NL ngun dng mt pha lm vic tn
s cao. T C to ra kh nng chuyn mch ca b nghch lu. SCR1 v SCR4 khi c kch cung
cp xung dng dng cho ti, np t C theo cc tnh nh hnh v chun b tt chng theo nguyn tc
chuyn mch cng. Kch SCR2 v SCR3 s lm cho SCR1 v SCR4 tt v cung cp xung dng m
cho ti.
Kho st chu k ta xc lp mch in hnh Hnh 5.1 (a):
L
N
c tr s rt ln => dng ngun phng, bng I.
Kch SCR1 v SCR4, c cc phng trnh:
0 0
I
v dv
C
R dt
= + vi
0
(0)
C
V v = + l gi tr u vo
=>
/
0
t RC
A Be v

= + ;
0
(0)
C
V v A B = + = + (5.1)
Sau chu k
0
( )
2
c
T
V v = (v tnh i xng)
/ 2 t RC
c
v A Be
= + (5.2)
Tch phn cng sut qua cun dy L
N
trong chu k:
/ 2
0
0
2
0 ( )
T
L
P I V v dt
T
= =
}
=>
/ 2
0
0
2
( ) 0
T
V v dt
T
=
}

Hay
/ 2
0
0
2
T
v dt V
T
=
}
=>
/ 2
/
1
2
T
t RC
o
VT
At Be
RC
(
=
(

(5.3)
Vy:
( )
( ) ( )
/ 2 /
0
/ 2 / 2
1 2
( )
4
1 1
T RC t RC
T RC T RC
V e e
v t
RC
e e
T

+
=
+

Khi chuyn v h n v tng i, t
2
; t t k RC
T
t
u e e = = = :
( ) ( )
/ /
0
/ /
( ) 1 2
2
1 1
k k
k k
v e e
k
V
e e
t u
t t
u
t

+
=
+
(5.4)
th in p trn cc phn t v p ra ti h n v tng i
0
( ) / v V u vi cc h s k khc
nhau c trnh by trn Hnh 5.5 (a) v (b) . Nhn xt l cc quan h c dng hm m, thi gian
0
0 v <
chnh l thi gian m bo tt tq cho cc SCR
95

Hnh 5.5: (a) dng p, dng qua cc phn t, (b) ( ) /
o
v V u vi cc gi tr k khc nhau
Bi tp: tnh gi tr ca
q
t , tnh gi tr I ca dng chy qua ngun
Hng dn:
/
/ 2
0
( ) 0 1 2 0
q
t RC
T RC
q
v t e e
= => + = =>
q
t

/ 2 / 2 2 2
0 0
0 0
2 2
.
T T
v v
P V I dt I dt
T R VT R
= = => =
} }

*) Kho st trng hp thc t: ti l RL, v in khng ngun khng v cng ln.
Khi cc dng dng, p c tnh dao ng, p trn t C sau khi qua gi tr cc i s gim
xung, ko theo gim tq, nht l khi tn s lm vic thp. Khi , ngi ta dng cc diode chn, cho
php gi p trn t gi tr cc i nh Hnh 5.6 (a) v (b).

Hnh 5.6: (a) mch ng lc, (b) dng p ra khi c v khng c diode chn

*) Kho st gn ng nghch lu ngun dng: thc t ti thng l RL.
Khi tnh ton gn ng, ta c cc gi thit sau d in khng ngun khng ln v cng:
- Xung dng cung cp cho ti l xung hnh vung, bin I.
- T C v ti RL lm thnh mc lc cng hng, lm cho p trn ti v
C
c dng hnh sin
v nh vy ch c sng hi bc 1 ca dng cung cp l
1
i to ra cng sut.
Mch tng ng c v trn hnh Hnh 5.7(a) khi ch xt thnh phn c bn (bc 1).
96
Hnh 5.7(b) cho ta cc vector:
C
V l p ra,
1
I l hi c bn ca dng ra
0
i ; , ,
C L
I I ln lt l dng
qua C v ti
L
R , ta c:
C
V l p ra, lch dng ra
L
I gc u ca ti
L
R .
1
I sm pha VC gc | c p m cn thit
tt c cc SCR (phn gch ng trong Hnh 5.7(c)).

(a)

(b) (c)
Hnh 5.7:
Ta c:
+ Gc lch pha
q
t | e =
+ Hiu dng hi bc nht dng
0
i l:
1
2 2
I a I
t
= vi a = 1 s 1 pha v
3
2
a =
s 3 pha. (dng cng thc phn VI.3.1, hnh 6.3.1).
T th vector ta c :
1 .sin
.sin 1 sin
tan
. os cos
. os
L
C L C
L
L
C
I
I I I B
I
I c B
c
I
|
| |
|
| |
|

= = = vi
1
L L
C C
I Y
B
I Y CZ e
= = = , Z l tng tr
ti RL ( )
2
2
L Z R e = + , vi
1
1 sin
tan
cos
B
B
|
|
|
| |
=
|
\ .
, (5.5)
tnh dng, p ta tnh cng sut P bng hai cch t ngun mt chiu (ngun cp) v
ti (tiu th ) nu coi h s h thng bng 1:
1 C C
2 2 1
. . . os =V . . os =>V . .
os .2 2
C
P V I V I c a I c V
c a
t
| |
t |
= = = (5.6)
T u ra V
C
c th xc nh cng sut v dng ngun I.
Bi tp: Tnh mch nghch lu ngun dng s mt pha. p ngun mt chiu 500 [V], tn
s lm vic 1 [KHz], R = 15 [O] v L = 0,001 [H]
- Tnh gi tr in dung C m bo thi gian tt SCR l 30 [s].
97
- Tnh gi tr hiu dng p ra V
C
, suy ra cng sut trn ti P v dng ngun I.
5.3.2. S 3 pha
to ra h thng ba pha, cc ngt
in phi c ng ngt theo mt th t
khng thay i i vi cc h thng ba pha,
gi l LOGIC BA PHA. Nghch lu ngun
dng s dng logic ba pha c hai ngt in
lm vic cng lc. y cng chnh l th t
Logic ba pha: (hai ngt in lm vic cng lc )
nhm + S1 S2 S3 S1
nhm S6 S4 S5 S6
chung S1 S6 S2 S4 S3 S5
iu khin cc SCR trong chnh lu cu ba pha. Nhn xt la y ch c hai ngt in lm vic
cng lc v dng ngun khng i (ngun dng) ch c th chy qua mt SCR ca nhm (+)
mt SCR ca nhm (). V d khi S1, S6 ang dn, S2 c kch s lm tt S1 (Hnh 5.8(a)).

Hnh 5.8: (a) Dng p, dng ca nghch lu ngun dng 3 pha, (b) mch ng lc
Hnh 5.8 cho ta cc dng sng v mch nguyn l ca nghch lu ngun dng 3 pha.
Dng ngun, xem nh khng i mt trng thi ca ti, c phn b cho cc SCR nh hnh (a):
mi lc ch c hai SCR lm vic, xung dng trn mi pha c dng ch nht, p ra thay i theo c
tnh ti. Cng ging nh nghch lu mt pha, dng qua ti i
A
sm pha hn in p v
A
(Hnh
5.8(a)). y chnh l iu kin c s chuyn mch: khi xem t chuyn mch l thnh phn ca
ti, ti s c tnh dung v t c p m vo SCR ang dn khi SCR mi c kch.
Vic tnh ton gn ng nghch lu ngun dng 3 pha thc hin ging nh s mt pha
nhng vi quan h gia bin v thnh phn c bn (h s a) ca dng in thay i.
Mt nhn xt khc l nng lng ch chy mt chiu t ngun qua ti, lm p ra thay i theo
ti, tng cao khi khng ti v nng lng tch tr ti tng cao.
Ta c th thay i p ra bng cch thay i p ngun hay mc song song vi ti mt mch
iu chnh cng sut phn khng.
Hnh 5.9(a) cho ta mt v d v nghch lu ngun dng c th. C th thy y l s pht trin
ca s Hnh 5.6(a) thnh ba pha, SCR ang dn s tt khi mt SCR ni chung anod (catod)
c kch theo logic mi lc c hai ngt in lm vic. Qu trnh tt T1 khi T3 c kch c v
trn hnh (b), cc t in s t p m vo T1 v np n cc tnh ngc li, chun b tt T3 xung
dng k tip. Cc diode c thm vo trnh tnh trng t in C b x qua ti tn s lm vic
thp. Hnh (c) cho ta cc dng sng trn cc phn t ca mch.
98

Hnh 5.9: S , dng p, dng ca nghch lu ngun dng 3 pha
5.4. NGHCH LU NGUN P
5.4.1. S mt pha
C th xem BB p mt chiu lm vic 4 phn t iu khin chung chng 4 vi p ra c
tr trung bnh bng khng l mt trong nhng b nghch lu ngun p mt pha, c gi l s
cu khi dng 4 ngt in (Hnh 5.4) hay na cu dng hai ngun (Hnh 4.9).
99

Hnh 5.10: S nghch lu ngun p mt pha
Hnh 5.10 cho ta hai dng mch khc ca nghch lu ngun p 1 pha (ngoi s cu
Hnh 5.4) l s na cu dng mt ngun (a) v s y ko (b). Hai s ny ch c th dung
cho cc b nghch lu v cu phn p dng t v bin p ch lm vic vi tn hiu xoay chiu.
C th d dng nhn thy l trnh t ng ngt cc ngt in ca cc s ny s ging
nh BB p mt chiu lm vic 4 phn t nhng lut iu khin s thay i, c bn nht l m
bo trung bnh p ra bng khng.
Cc ngt in nh vy phi c kh nng ng ngt theo s iu khin, khng ph
thuc ti. Hin nay mc cng sut di 100 kW ngi ta thng dng linh kin h transistor
(IGBT, transistor Darlington, MosFET) v c th dng SCR + mch tt hay GTO cng sut
cao hn.
Vic tnh ton dng dng, p ca ti RL c th dng cc cng thc xy dng trong
chng 4.
5.4.2. S ba pha
Nghch lu ngun p nhiu pha c th bao gm nhiu b nghch lu mt pha lm vic lch
pha mt gc qui nh ca h nhiu pha tng ng, v d 2t/3 h 3 pha. Thng gp nht l nghch
lu nhiu pha c to thnh t nhng na cu nh Hnh 5.11(a) l s ba pha, gm 3 nhnh lm
vic lch nhau 2t /3 tng i mt. Vi ngun l ngun p v c diode phng in song song vi
mi ngt in, nng lng truyn c hai chiu gia ngun v ti lm cho p ra c dng cc xung
vung c bin l bin p ngun. Khc vi nghch lu ngun dng, nghch lu ngun p ba
pha c th s dng logic ba pha c hai hay ba ngt in lm vic cng lc.

100
Hnh 5.11(b) gm dng xung
iu khin cc ngt ngt in, dng p,
dng ra ti RL ca mt s nghch
lu ba pha ngun p. Nhn xt l mi
lc c 3 ngt in lm vic.
Logic ba pha: (ba ngt in lm vic cng lc )
Pha A S1 S4 S1
Pha B S2 S5 S2
Pha C S6 S3 S6
chung S1 S6 S2 S4 S3 S5 S1

(a) Mch ng lc

(b) cc dng sng
Hnh 5.11: Nghch lu ngun p ba pha
Dng sng u ra nghch lu ngun p 3 pha c dng xung iu khin hnh Hnh 5.11(b)
c gi l dng sng 6 nc, c xem l cn bn cho vic kho st c tnh NL ngun p ba pha.
tnh ton p u ra nghch lu ngun p, ngi ta thng gi s nh ngun c im gia
n, cc p pha
An
v ,
Bn
v ,
Cn
v , p dy
AB
v ,
BC
v ,
CA
v c cc quan h:
0
AB An Bn
BC Bn Cn
CA Cn An
AB BC CA
v v v
v v v
v v v
v v v
=
=
=
+ + =

Khi iu khin S1 = S4 (S1 v S4 lm vic ngc pha), ta c th chng minh l cc p
pha v cc p dy hon ton xc nh t lut iu khin cc ngt in. H thng nh vy cn
gi l iu khin hon ton (ton phn). H thng c gi l iu khin khng hon ton nu
c khong thi gian c hai ngt in ca na cu u khng lm vic. Khi , p ra s ph
thuc vo dng phng in qua diode, v nh vy p ra s ph thuc ti.
Hnh 5.11(b) cho thy p dy
AB
v l xung vung. tnh cc p pha ti, ta gi s ti ni hnh
sao, i xng v c trung tnh l N. Ta c cc quan h sau khi b qua ch s N ca p pha ti:
101
0
AB An Bn
BC Bn Cn
CA Cn An
AB BC CA
v v v
v v v
v v v
v v v
=
=
=
+ + =
suy ra
1
( )
3
1
( )
3
1
( )
3
A AB CA
B BC AB
C CA BC
v v v
v v v
v v v
=
=
=
(5.7)
T y c th tnh c p pha v
A
c dng nc thang v kho st trong mt chu k ta xc lp
dng dng bao gm cc on hm m l dng in qua RL khi p thay i nhy cp:
Cng c th tnh p pha ti theo p u ra b nghch lu:
1
(2 )
3
1
(2 )
3
1
(2 )
3
A An Bn Cn
B Bn An Cn
C Cn An Bn
v v v v
v v v v
v v v v
=
=
=
(5.8)
Khi
An A Nn
v v v = + ,
Bn B Nn
v v v = + ,
Cn C Nn
v v v = + . Vi
Nn
v l in p gia trung tnh
N ca ti v trung tnh ngun n v 3
An Bn Cn Nn
v v v v + + = . Cc cng thc ny khng ph thuc
vo nguyn l hot ng ca s nghch lu ba pha.
Khc vi nghch lu ngun dng ch c mt s iu khin nh trnh by, nghch
lu ngun p c th c iu khin bng nhiu thut ton khc nhau.
5.4.3. Nghch lu a bc
Mc ch lm cho dng in p gn vi hnh sin hn. C nhiu cch thc hin nghch
lu a bc:
+ S dng ngun c nhiu cp in p v nhiu ngt in ni tip.
+ Ni tip nhiu b nghich lu 1 pha c ngun ring.
+ Ni tip nhiu b nghich lu lm vic lch pha qua bin p u ra.
a) Nghch lu nhiu bc dng ngun nhiu cp in p: (Hnh 5.12)

Hnh 5.12: Dng tn hiu p ra nghch lu 5 bc in p.
102
- Nhiu cp p ngun dng t phn p.
- S cp bng s t in n + 1.
- nguyn l lm vic: Ngt in pha trong (S13 hay S23) ch c kha khi ngt in ngoi
n (S12 hay S22) kha v nh th mt cp in p s c ni vo ti qua diode kp khi cc ngt
in gia n v ti lm vic.

(a) Nguyn l nghch lu nm nc dng nhiu
ngun cp in

(b) Thc hin bng s dng diode kp
Hnh 5.13:
b) Nghich lu nhiu nc dng cc cell nghch lu mt pha (Hnh 5.14)

(a) Mt cell nghch lu mt pha v k hiu
(trng hp ti R)
Nghch lu a bc ba pha dng t hp ba cell
nghch lu mt pha cho mi ti
Hnh 5.14: Nghch lu nhiu bc dng cc cell nghch lu mt pha
103
- Nh c th nhn xt trong phn kho st NL ba pha su nc, cc dng p nc thang ny c
to ra t vic cng (tr) cc dng xung vung lm vic lch pha nhau. Khi ta cng (tr) nhiu p ra
ca NL mt pha, ta c th tng hp c dng p nghch lu a bc.
- S bc: Mi cell c th c 3 mc: +V, 0, -V; trn mt nhnh c N cell to thnh 2N+1
bc.
Nghch lu a bc cho php to ra cng sut ln, p cao t cc cell cng sut b, p thp. Tuy
nhin, BB yu cu cc ngun mt chiu cch ly vi nhau.
c) Nghch lu a bc chp ni bin p u ra (Hnh 5.15)
- Mi cp c b rng nh nhau.
- S dng bin p cng cc xung vung thnh p nc thang.
- S bc bng 2 ln s b nghch lu mt pha.
- n gin nht nhng kch thc ln, hiu sut khng cao.

Hnh 5.15: Nguyn l cng hai dng p nghch lu dng bin p to sng nc thang
Hnh 5.16 gii thch nguyn l tng hp dng sng 12 nc thang ba pha t 6 b NL mt pha
lm vic lch 30
0
, du cho bit phi o cc tnh cun dy. Mi pha ti c cung cp bng
mch ni tip 5 cun th cp ca bin p u ra cc b NL mt pha vi bin c t l theo bng
trn Hnh 5.16(a).

(a) Bng tng hp p ba pha t 6 thnh phn 1 pha lch 30
0

(b) Dng sng 12 nc thang
Hnh 5.16: Tng hp dng sng 12 nc t 6 ngun nghch lu mt pha

104
5.4.4. Tnh ton gn ng nghch lu ngun p
ng dng mch tng ng Hnh 5.17 khi xem sng hi bc cao c tc dng khng ng
k.
1
v ,
1
i l thnh phn c bn (bc 1, tn s gc e), TI chnh l mch tng ng ca ph ti,
c tnh tn s lm vic e.

Hnh 5.17: Tnh ton gn ng nghch lu ngun p
Ngun v1 c tr hiu dng c tnh t khai trin Fourier p u ra BB (mc 5.5). T
mch tng ng, ta tnh c dng ti (xem nh bng i
1
), cng sut tiu th, suy ra nh
hot ng ca ti.
nh gi tc dng ca p ra BB khng hnh sin, ta tip tc s dng nguyn l xp
chng tnh ton dng, p, cng sut ca cc sng hi bc cao, cng vic cng tng t nh
tnh ton vi thnh phn c bn.
5.5. IU KHIN P RA V HN CH SNG HI
5.5.1. Phn tch sng hi in p
Dng sng iu rng xung trn Hnh 5.18 cho php ta phn tch sng hi hu ht cc
dng p ra ca mch nghch lu ngun p thng gp.

Hnh 5.18: Dng xung c bn cho phn tch sng hi nghch lu
Trc tung c di n v tr trc i xng xung p c b rng a khai trin Fourier
ca p ra khng c thnh phn sin. Ngoi ra, v p ra c t/2 l tm i xng, sng hi p ra
khng c tn s bi chn (n
=
2k):

2 1
os(n t)
n
n k
v V c e
= +
=

k= 0, 1, 2, 3,... Tch phn ly theo t e

2 / 2 / 2
0 / 2 / 2
1 2 2
. os(n t) t= . os(n t) t= . os(n t) t
n
V v c d v c d v c d
t t o
t o
e e e e e e
t t t

=
} } }

| |
= /2
t=- /2
2
sin( )
n
V
V n t
n
e o
e o
e
t
= suy ra
4
sin
2
n
V na
V
nt
= (5.9)
105
Khi o = t /2 (xung ch nht) n=1,3,5,7,9, th
1
2
4 4 4 4 4 4
, , , , , ( 1)
3 5 7 9
n
n
V V V V V V
V
n t t t t t t
= (5.10)
Bi tp 5.1: Chng minh dng sng 6 nc hnh Hnh 5.11
+ Cc thnh phn Fourier ca p dy dn vn bng 3 cc thnh phn tng ng ca p pha.
+ T s cc song hi bc cao trn song hi c bn (bc 1) cua p dy v p pha nh nhau.
5.5.2. iu khin p ra
iu khin p ra l mt yu cu cn thit cho cc b nghch lu v:
- Gi n nh in p u ra, trnh cc st p do ti, ngun v c do cc phn t trong mch.
- p ra cn iu khin theo yu cu ca ti. V d nh vi ti ng c, khi lm vic vi ngun
p cn cung cp in p t l vi tn s lm vic ng c khng b bo ha.

Hnh 5.19: c tnh U/f theo l thuyt (a) v thc t (b)

(a)

(b)
Hnh 5.20: iu khin p ra bng lch pha
Ta c cc phng php sau:
a) Thay i ngun cung cp
Lm bin p ra thay i, thng s dng khi nghch lu l ngun dng hay p ra c dng
106
c nh. Khi , b NL thng c cung cp in DC t b ngun chnh lu iu khin pha hay
qua BB p DC.
b) iu ch rng xung: Mt xung v nhiu xung.
Mch iu khin phc tp hn v kt hp c iu khin p v tn s vo cng s nhng
mch ng lc n gin v kinh t hn.
C hai trng hp: k hon ton khi lun c 1 ngt in lm vic mt na cu hay k khng
hon ton khi c lc khng c ngt in lm vic. Khi iu khin hon ton, p ra c xc nh t
lut iu khin ngc li vi k khng hon ton v khi khng c ngt in lm vic trn nhnh na
cu, p u ra ph thuc dng phng in (hnh 5.21 v 5.22).

Hnh 5.21: S iu rng nhiu xung (NL mt pha) khi iu khin hon ton (s cu hai
ngun)

Hnh 5.22: Dng p, dng nghch lu ngun p mt pha khi iu khin khng hon ton
(mch Hnh 5.10)
V d 5.1: Tnh ton dng dng ca b nghch lu 1 pha, s cu vi iu khin lch pha
Hnh 5.20. p ngun V, ti RL, chu k T, gc lch pha iu khin u , rng xung p
.( ) / 2 q T t u t = , q tnh bng giy.
Xt chu k tc xc lp, khi dng in lp li theo chu k T.
Gi gi tr dng qua ti khi t = 0 l I1 . Ta c phng trnh vi phn khi S1, S4 ng:
i
di
V L R
dt
= + vi iu kin u i (0) =
1
I .
107
Suy ra:
( ) /
2
1 2
.
T
q
I I e
t
= <VD6.1.1>
Khi q=
2
T
, i= -
1
I . V c s i xng hai na chu k dng m
Ta c:
( ) /
2
1 2
.
T
q
I I e
t
= <VD6.1.2>
T <VD6.1.1> v <VD6.1.2> ta tm c
1
I ,
2
I :
( ) /
/ / 2
2
2 1 / 2 / 2
1
,
1 1
T
q
q T
T T
V e V e e
I I
R e R e
t
t t
t t

= =
+ +

Bi tp 5.2: Kho st p ra ca b nghch lu c b rng xung khng i khi tn s thay i
(gi s iu khin hon ton). Gi q l b rng xung tnh bng giy l khng i trong bi tp
ny. Tn s f ca b nghch lu thay i, ln nht ng vi tr s chu k ti thiu
ax
1/
m
f bng
2.q . B rng xung tnh bng bng:
2 q q u e t = = Bin sng hi bc n = 1(thnh phn c bn) l
1
4 4
sin sin( )
2
V V
V fq
u
t
t t
= = . c kt qu kho st tng, t tn s
'
ax
/
m
f f f = vi
ax
1/ 2
m
f q = hay
'
f f = .
ax m
f v hm s kho st l :
'
'
1 1
/(4 / ) sin
2
f
V V V
t
t = = , trong f thay i trong khong 0 .. 1.
V c dng hnh sin. vi khong tn s thay i hp l, kh xa tn s cc i fMAX, p ra c th
xem l tuyn tnh theo tn s. Nguyn l ny cho php xy dng s iu khin rt n gin thc
hin nguyn l V/ f = hng s.
Hnh bi 5.2
Bi tp 5.3: Kho st sng hi ca b nghch lu iu khin lch pha theo gc lch pha. (gi s
iu khin hon ton). Nh chng minh, khi hai na cu iu khin lch pha u ta c dng xung
iu rng, b rng xung l u v sng hi bc n l:
4
sin
2
n
V n
V
n
u
t
= , n ch c cc gi tr l v u thay i trong khong t 0 .. t
Kho st hm s
4 1
' /( ) sin
2
n n
V n
V V
n
u
t
= = , theo u cho ta th sau vi n = 1, 5, 7,
11, 13 . Cc hi bi ba khng cn xt khi dng sng c ng dng cho h ba pha.
108
5.5.3. Hn ch sng hi u ra
Cc sng hi bc cao c cc tc dng:
- Gy pht nng ph: do dng khng hnh sin v hi bc cao lm tng tn hao trong dy dn
v li st.
- Gy momen ph: do cc thnh phn 3 pha bc cao to ra trong ng c xoay chiu.
C nhiu phng php hn ch sng hi bc cao, chia lm hai nhm:
- S dng b bin i a cp: Dng sng nc thang vn c sng hi rt b: Khi so snh
dng sng nc thang v thnh phn c bn (bc 1) tng ng, c th nhn xt l sng hi bc cao
khng ng k k c tn s (n1).
0
f , n: s nc thang.
thay i p u ra, ta thay i rng xung cc b bin i mt pha.
- iu ch rng xung (PWM): khi s dng nhiu xung cho mt bn k v c b rng khc
nhau, cc sng hi c tn s ln hn c bn
0
f s gim nhanh, nhng cc thnh phn tn s > (n-1)
0
f c gi tr rt ln. iu ny khng nh hng ln n hot ng ca ti v dng in ca sng hi
tng ng khng ln. Tc dng c th l: gy ting n, nhiu tn s cao, pht nng trong li thp.
C nhiu phng php: iu ch rng xung hnh sin (SPWM) cng vi cc ci tin, trit
tiu cc hi chn trc, dng b so snh c tr (iu rng thch nghi), iu rng vevtor khng gian
(SVPWM).
5.6. MCH IU KHIN NGHCH LU
5.6.1. Mch to logic ba pha

(a) Mch to logic ba pha

(b) Cc dng sng logic ba pha, mi
thi im c hai ngt in lm vic
Hnh 5.23: Mch to logic ba pha v dng sng
Hnh 5.23 trnh by nguyn l ca mch to ra logic ba pha, c th c s dng trong
nghch lu ngun dng hay nghch lu ngun p n gin (iu ch rng mt hay nhiu
109
xung). Cc s iu ch xung hnh sin hay iu khin bng vi x l cng c nhng khi c
cng chc nng m bo th t ca h ba pha.
CD4017 l vi mch m vng Johnson 10 trng thi: sau mi xung ng h CLK ln
lt c mt u ra ln 1 (Hnh 5.23b), Q6 a v chn Reset h thng ch cn 6 trng thi
tng ng vi logic 3 pha. Cc mch OR t hp cc u ra b m lm thnh cc xung iu
khin ngt in bn dn theo s mi thi im c hai ngt in lm vic (trn Hnh 5.23b
v tn hiu iu khin hai ngt in S1 v S2, cc ngt in khc cng tng t).
5.6.2. Mch to p chun hnh sin dng ROM v DAC (bin i s tng t)

Hnh 5.24: Mch to p chun hnh sin v sng mang rng ca cho s iu ch rng
xung hnh sin (SPWM)
Trong cc s SPWM hay iu khin u ra bm theo hnh sin chun dung phn cng,
ht nhn ca mch iu khin l b to hnh sin c bin v tn s iu khin c. Vi s
SPWM, ht nhn ny cng cho ra dng song tam gic c tn s l bi s v ng b v
hnh sin chun. iu ny s m bo p ra ging nhau cc pha v loi b kh nng c song
hi tn s thp hn tn s c bn (ca hnh sin chun).
Trong mch to p chun hnh sin dung ROM v DAC, bin hnh sin chun v cc
song tam gic c ly mu (thc cht l tnh ton) v cha trong ROM. ti hin li cc
dng song, cc gi tr ny c c li tun t v chuyn i ra tn hiu tng t (analog)
bng DAC. Tn s ti hin (playback) f c tng hp bng b bin i in p-tn s VFC
t p iu khin Uk :
f = k.U
k
= N.
O
f , vi k: h s t l (Hz/volt);
O
f : tn s u ra mong mun; N: s mu
ca mt hnh sin chun.
f chnh l tn s xung ng h ca b m chng trnh PC cung cp a ch cho ROM
cha gi tr bn dng song: ba cho hnh sin ba pha v mt cho song tam gic. Cc DAC bin
i t s ra in p, to ra cc tn hiu mong mun. thay i bin cc hnh sin, DAC
c s dng l loi nhn v tn hiu iu khin bin c a vo chn p chun REF ca
n.
110
Khi iu khin in p KU c th n gin thc hin quan h U/f = hng s, hay gm
c vic b gim tc theo ti.
Vi s Hnh 5.24 ta c s ng b gia cc hnh sin chun 3 pha v song mang tam
gic. V ch c mt song mang dung cho ba pha hnh sin, tn s song mang
C
f cn l bi su
ca tn s u ra
O
f cc dng song u ra ging nhau. iu ny s khng tht s cn thit
khi t s /
C O
f f kh ln (vi chc).
Hnh 5.25 l mt v d minh ha qui lut thay i
C
f theo
O
f (ng m trn hnh)
vi
CMAX
f = 600 Hz v
CMIN
f = 300 Hz.
C
k =
C
f /
O
f l bi s iu ch. Khi tn s b hn 12.5
Hz ta khng cn c s ng b gia hai tn hiu. Mt kh khn khc pht sinh l khi
C
k thay
i, ci s thay i khng lien tc ca song hi bc 1 ca in p ra.

Hnh 5.25: Quan h tn s sng mang f
c
v tn s u ra f
0

5.6.3. Mch iu khin nghch lu dung chng trnh ROM

Hnh 5.26: Mch iu khin nghch lu dng chng trnh ROM
Vi nhn xt trng thi ca cc ngt in bn dn trong b nghch lu iu khin
rng xung l ng hay ngt mt cch tun t c chu k, khng thay i nu dng sng u ra
khng i (nh dng sng trit tiu c hi chn trc kho st); c th ghi trng thi ng
ngt sau cc khong thi gian bng nhau ca cc ngt in thnh chng trnh ca b nh ch
c ROM. Chng trnh ny s c truy xut tun t iu khin cc ngt in ca b
nghch lu, to ra dng sng mong mun. Hnh 5.26 trnh by mt s khi thc hin
nguyn l ny. in p iu khin U t c bin thnh tn s qua b bin i in p/ tn
s VFC, lm xung nhp cho b m chng trnh PC, l b phn cung cp a ch cho ROM.
PC l b m nh phn c s trng thi bng s trng thi to thnh dng sng iu khin
111
nghch lu trong mt chu k p ra. Ni dung ca ROM c tnh ton sao cho m bo p
ra c tr s mong mun (iu khin p) v sng hi bc cao b (hn ch hi bc cao). Khi thay
i U t, tn s xung nhp PC thay i v tn s u ra c thay i theo t l.
thay i dng sng u ra theo tn s, ROM cha nhiu dng sng ng vi cc tn
s khc nhau v khi o tn s s thay i phn a ch do n qun l ch n vng d liu
tng ng. C th xem dng sng mt chu k mt tn s l mt trang v cc trng thi ca
cc ngt in trong mt dng sng l nhng dng trong mt trang. Vy PC cung cp a ch
cc dng v b o tn s cung cp a ch trang. Tn hiu ng b t PC yu cu b o tn s
ch c php thay i u ra u cc trnag trnh nhng thay i dng sng khng kim
sot.
V d:
- Tn s u ra nghch lu
O
f thay i t 1..64: chn mi Hz l mt dng song, suy ra ROM c
64 trang dng song, a ch trang gm 6 bit.
- Chn mi dng song c N = 255 trng thi (chn chia chn cho 3) c th a ch ha bng 8 bit.
Vy PC l b m nh phn 8 bit nhng c reset trng thi th 255 v ROM cn 14 chn a ch,
tng ng dung lng l 128 Kbit hay 16 Kbyte.
- Tn s xung nhp ca PC l N.
O
f = 255.
O
f , cc i bng 255*64=16.32 kHz
- C th s dng b m 6 bit lm b o tn s, thi gian m cng l 64/1320 =3.92 mili giy
(m c 64 xung tn s xung nhp bng 16.32 kHz).
- Khi quy nh s thay i ca bin U t v khong tn s u ra tng ng, c th suy ra h
s ca VFC.
u im ca phng php ny l c th iu khin in p v hn ch sng hi bc cao vi cht
lng kh tt trong khi mch x l rt n gin. Nhc im ln nht l dng sng mi tn s l
nh trc, khng th thay i theo iu kin thc t v d nh p li gim so vi tnh ton, hay cn b
st p theo ti,. s dng sng l hu hn.
6.7. BIN TN
Bin tn l b bin i dng in xoay chiu ca li in thnh dng in xoay chiu c tn s
khc vi tn s ca li in. Bin tn hin c ng dng rng ri trong cng nghip iu khin tc
ng c AC. y l phng n hiu qu nht:
- C th s dng ng c khng ng b r tin, chc chn.
- iu khin tn s ng c AC l phng php c hiu sut cao, cht lng tt.
Cc b bin tn c mch ng lc t tin, s iu khin phc tp, ch c ph bin trong thi
gian gn y nh s pht trin vt bc ca cng ngh ch to bn dn, c lnh vc vi mch v cng
sut.
C hai dng bin tn: Bin tn trc tip (cyclo-converter) v bin tn qua trung gian mt chiu.
- Bin tn trc tip chnh l b bin i o chiu (chnh lu iu khin pha o chiu), c iu
khin c p u ra thay i cc tnh c chu k: p ra xoay chiu ny ch c th c tn s kh b so vi
tn s li in. B bin i o chiu Hnh 5.27 c th lm thnh mt pha ca b bin tn trc tip vi
thut ton iu khin thch hp. Khi thay th SCR bng ngt in c iu khin kha, ta c th nhn
c nhiu tnh nng tt hn.
112

(a) p ra (mt pha) bin tn trc tip s dng BB o chiu hai cu 3 pha, iu khin chung
tuyn tnh. o, | l hai gc iu khin pha ca hai b chnh lu, thay i theo lut tam gic.

(b) p ra (mt pha) bin tn trc tip s dng BB o chiu hai cu 3 pha s dng ngt in
chuyn mch cng bc, to ra p c tn s cao hn tn s li in.
Hnh 5.27: Bin tn trc tip
- Bin tn c trung gian mt chiu c s khi nh Hnh 5.28, gm hai b phn: chnh lu u
vo v nghch lu u ra. T hp hai BB ny lm ra nhiu s khc nhau vi kh nng v phm vi
s dng rt khc bit. Thut ton iu khin bin tn cng rt phong ph, v hin vn tip tc pht trin
cng vi vic ng dng cng c iu khin mi nhm nng cao cht lng hot ng.

Hnh 5.28: Bin tn c trung gian mt chiu
113
C hai loi: Bin tn vi nghch lu ngun dng (NLND) v nghch lu ngun p (NLNA). Cc
bin tn ny cn m bo cc yu cu:
- Thc hin c logic ba pha, thay i tn s ra.
- iu khin p theo c tnh ca ti, v d nu ti ng c phi m bo mch t khng bo ha
bng quan h U/f = hng s nh kho st.
- Hn ch c song hi p (dng). c tnh ny ph thuc vo s ng lc, iu khin nghch
lu.
Nguyn l iu khin ng c AC dng bin tn:
Khi tn s thay i, t trng quay ca cc cun dy xtator c tc thay i theo quan h
60.
o
f
n
p
= ; trong
o
n tnh bng vng/pht, f : tn s (Hz) v p l s i cc.
Rotor s quay theo t trng quay vi trt s hu nh khng i.
C hai nguyn l chnh cho iu khin ng c khng ng b dung phng php thay i tn s:
- iu khin U/f hng: khi tn s thay i, in p t vo cun dy cng thay i t l trnh
vic tng mt t thong dn tng dng t ha.
- iu khin vector ng c KB:
L phng n hin i, s dng cc vi x l mi c kh nng tnh ton rt mnh iu khin
ng c KB.
Phng n ny khc phc nhc im quan trng ca cc s iu khin U/f hng l momen
ng c thp, c bit khi tn s lm vic nh hn 3 Hz. BB iu khin U/f hng ch cung cp cho
ng c mt in p ba pha tng ng tn s lm vic, dng qua ng c thay i theo trng thi ca
ng c.
Bng cch khng ch c lp dng t ha (to ra t thong khe h) v dng rotor (to ra momen
quay), bin tn iu khin vector c th iu khin c momen ng c KB nh lm vi ng c
mt chiu, bn cnh kh nng iu khin tc thong qua s thay i tn s.
C hai s iu khin vector: c phn hi v tr rotor (c cm bin v tr) v khng dng cm
bin (sensorless). S u tin cho php iu khin chnh xc nhng phi dng ng c ch to ring
trong khi phng n sau c th dung ng c KB thong thng.
Khi bin tn c dung iu khin tc ng c, s iu khin cn c cc chc nng: hn
ch st tc khi hot ng, bo v qu ti, iu khin thi gian tng, gim tc.

5.8. NG DNG
5.8.1. Cc b ngun tn s cao
Nh gii thiu trong mc phn loi, ta c th nung nng cm ng cc vt liu dn in bng
dng in cm ng. Dy tn s lm vic thay i t tn s cng nghip n vi trm KHz:
- Tn s lm vic gim khi cng sut tng.
- Tn s cn phi tng khi b dy lm vic gim (ti b mt thp).
C th s dng NL ni tip hay song song vi ngt in l thyristor trong cc b ngun tn s cao.
tn s ln hn 100 KHz, c th dung transistor hay cc n chn khng truyn thng.
Nh kho st V.2, cc s NL song song c dng NL ngun dng vi ti cng hng l
cun dy lm vic v in dung b cos| cho n. Trong thi gian gn y, ngi ta bt u dung
transistor vi cc s c chuyn mch khi dng (p) bng khng.
114

5.8.2. B ngun xung s dng nghch lu
B nghch lu c th dng cho b cp in ng ngt, bin i in mt chiu thnh xoay chiu,
cung cp cho bin p tn s cao. Nh kch thc v gi thnh bin p ny v mch lc u ra gim
ng k.
Mch nghch lu c dng s na cu khi cng sut nh hn 500 W v s cu khi ln hn.
Trong Hnh 5.29(a), T1 l bin p gim (tng) p, ta c u ra mt chiu sau khi chnh lu v lc phng.
c p ra n nh, u ra c phn hi thay i rng xung b nghch lu.
Vi s na cu, iu khin thong hon ton c s dng. Do u ra bin p c chnh lu,
ti b nghch lu c xem l thun tr.
Hnh 5.29(b) l mch iu khin, tc dng y ko (push pull hay lun phin dn in ca S1 v
S2) nh b chia hai dung flip-flop. y l ht nhn ca vi mch TL494.

(a) Mch nghch lu ca b ngun xung (s na cu)

(b) Mch iu khin nghch lu y ko (dng trong b ngun xung)
Hnh 5.29:
5.8.3. B ngun xoay chiu khng gin on UPS (b lu in)
Hnh 5.30 trnh by s khi b lu in (UPS Uninterrupted Power Supply), c s dng
cho cc thit b dung in quan trng khng th mt in bt ng nh my ch ca mng my tnh hay
cc my in t y t. UPS s cung cp in tm thi khi mt li trong khi ch lu d liu ang lm vic
hay cho chy my pht d phng. S khi bao gm b nghch lu s dng accu v b chuyn mch
(r le hay triac). Bnh thng ti dng in li, ch chuyn sang s dng ngun nghch lu khi mt
ngun nn UPS c s khi nh vy c gi l loi OFF-LINE. Thi gian chuyn mch phi b,
115
khong vi chc msec ti xem nh c cung cp in khng gin on. B np accu t ng m
bo h thng lun sn sang lm vic. C loi UPS khng c b chuyn mch v b nghch lu lun lm
vic, nh l b bin tn c khu trung gian mt chiu vi ngun d phng l accu mch mt chiu (loi
ON-LINE).
cc b UPS cng sut b (<1.5 kW), mch nghch lu l mt pha s dng bin p c im gia,
thch hp vi accu c in p b (12V hay 24V). p ra c iu khin bng cch thay i rng
xung. Mt vi mch tng t TL494 c kh nng lm vic 50 Hz c s dng cho iu khin nghch
lu (SG3524).

Hnh 5.30: S khi ca b ngun khng gin on UPS

CU HI N TP
1. Cc bi tp cho trong cc mc.
2. Cho BB in p mt chiu v mch iu khin n gin ha nh hnh 5.31a,
trong U1D l mch to xung tam gic trn t C (hnh 5.31b ), U1C l mch o, U1A v
U1B l hai mch so snh dng khuch i thut ton. V dng p ra vo, tm quan h tr trung
bnh p ra Vo/V theo U
K
/U
B
(U
B
l bin xung tam gic). Nu cc c im ca phng
php iu khin ny.
n gin, cho p ra bo ha ca Khuch i thut ton l p ngun VCC v st p
qua cc mi ni transistor bng 0.

(a) (b)
Hnh 5.31:

Chng 6. n p ngun
116
CHNG 6: N P NGUN

6.1. GII THIU CHUNG
Cc thit b tiu th nng lng in nhiu khi cn thit phi thay i mc in p cung
cp cho n, ph hp vi tng tc ng (v d: cc accu xit yu cu c cc mc in p np
khc nhau ph hp vi trng thi np).
Trong khi hot ng, cc thit b in-in t lun cn c in p cung cp n nh. Nu
ngun in p cung cp n nh th tui th ca cc thit b s c ko di, tnh n nh v
chnh xc trong vn hnh thit b s cao. Trong khi cc ngun cung cp hin c nh ngun
in li, ngun in accu, ngun pin mt tri, thng khng n nh, v vy n nh
ngun cung cp l mt yu cu rt quan trng v khng th thiu c trong h thng ngun
cung cp cho cc thit b in-in t chuyn dng v dn dng.
Trong chng ny tp trung tm hiu cc b n p ngun mt chiu, l loi ngun c
ng dng nhiu nht trong cc thit b in t, vin thng.
6.2. CC THNG S C TRNG
Trong vic n nh ngun cung cp th c n nh in p v n nh dng in, nhng
hu ht trong cc thit b in t c yu cu in p c n nh l chnh. Vic n nh in
p hay n nh dng in c thc hin mt cch t ng.
Cc tham s c bn ca b n nh l h s n nh, di n nh, hiu sut v thi gian
xc lp.
- H s n nh in p K
u
ni ln tc dng ca b n nh lm gim khng n
nh ca in p ra trn ti i bao nhiu ln so vi in p u vo.
Nu gi khng n nh ca u vo v u ra l N
v
, N
r
th ta c:
- khng n nh in p u vo:
v
v
vm
U
N
U
A
= .
- khng n nh in p u ra:
r
r
r m
U
N
U
A
= .
AU
v
, AU
r
l lch ln nht v mt pha ca in p u vo v u ra so vi cc gi tr
nh mc ca in p u vo, u ra U
vm
, U
rm.

Vy n nh in p ca b n p l:

v v r m
u
r r vm
N U U
K .
N U U
A
= =
A
(6.1)
AU
v
thng rt ln so vi AU
r
nn cc b n nh in p trong thc t c
Ku = 20 200.000.
- Di n nh Du ni nn rng ca khong lm vic ca b n p.
D
u
= U
v max
- U
v min
, trong U
v max
, U
v min
l in p u vo cao nht v thp nht m b n
nh vn hnh bnh thng.
B n
nh.
Uv

Ur

Hnh 6.1: Chc nng b n nh
Chng 6. n p ngun
117
- Hiu sut ca b n nh: Khi lm vic, cc b n nh cng tiu hao mt cng sut
in, do hiu sut ca b n nh:

r r
v r t h
P P
P P P
q = =
+
(6.2)
P
r
cng sut hiu dng trn ti ca b n nh.
P
v
cng sut hiu dng m b n nh yu cu.
P
th
cng sut tn hao trn b n nh.
Thi gian xc lp T
xl
ca b n nh l khong thi gian cn thit a i lng
khng n nh trn ti v gi tr nh mc ca n k t thi im bt u xy ra s mt n
nh. Ngy nay cc b n nh dng linh kin bn dn v vi mch, nn T
xl
l cc nh v c
coi l khng c qun tnh. Trong cc b n nh ngun in, phn t c bn ca chng l
phn t hiu chnh PTHC. PTHC c tc dng hiu chnh mi s bin ng ca ti hoc ca
in p t vo b n nh, gi cho in p hoc dng in trn ti khng thay i, hoc thay
i trong mt phm vi rt hp.
Da theo cch mc phn t hiu chnh vi ti ta c cc b n nh kiu song song, cc
b n nh kiu ni tip.
- Nu da theo loi dng m b n nh lm vic, ta c b n nh xoay chiu, b n
nh mt chiu.
- Nu da theo c tnh lm vic ca PTHC, ta c b n nh kiu lin tc, b n nh
kiu chuyn mch.
6.3. N P NGUN S DNG PHN T HIU CHNH
n p ny c hai loi l s dng phn t hiu chnh mc song song v mc ni tip. Tuy
nhin hiu ca ca vic s dng phn t hiu chnh mc song song l khng cao, do vy y
chng ta tp trung tm hiu loi n p s dng phn t hiu chnh mc ni tip.
6.3.1. S khi chung

Trong s , phn t hiu chnh (PTHC) ni tip vi ti, PTHC c iu khin bng
tn hiu mt chiu t u ra b khuych i so snh. PTHC l cc transistor lng cc cng
Hnh 6.2: S khi ca
b n nh in p 1 chiu
vi hiu chnh ni tip.
(in p 1 chiu
cha n nh)
Phn t
hiu chnh
Khuych i
so snh
Ngun
chun.
Uv

Ur

Us

Ti
Mch hi
tip.
Chng 6. n p ngun
118
sut lm vic ch tch cc (khuych i). Ty theo cng sut ti yu cu m PTHC l
mt transistor hoc ni theo s Darlington hay ni song song.
in p ra qua mch hi tip a v b so snh, mch hi tip ly mt phn in p ra
a tr v b so snh. Mch hi tip thng l b phn p.
B khuych i so snh (hay cn gi l khuych i sai lch) thc hin vic so snh
mu ca in p ra trn ti vi in p chun, kt qu so snh ta c mt in p U
s
cng l
in p mt chiu bin i theo U
r
. U
s
c a n iu khin PTHC.
Ngun chun: L b to ra in p n nh khng ph thuc vo mi s bin i ca U
v

hay ti, cung cp mt in p chun cho b khuych i so snh.
- Cc b n nh in p vi hiu chnh ni tip c h s n nh cao gii n nh rng,
rt ph hp vi nhng iu kin in p vo bin i rng v nhng ti c yu cu in p ra
iu chnh c.

6.3.2. B n nh in p vi hiu chnh ni tip, khng khuch i so snh
Q
1
ng vai tr l phn t hiu chnh kim lun c khuch i so snh, Z
D
, R
1
l mch
to p chun, R
2
ni tip Q
1
gim cng sut tiu tn cho Q
1
, nht l trong trng hp b qu
ti C
1
ni song song vi ti lc b cc thnh phn xoay chiu u ra (gim nh tr khng
ra i vi cc thnh phn xoay chiu). B n p ny thng c mt in tr ni ngang qua
u ra (R
3
ni chm chm...) gi l in tr thot cho in p trn C
1
trong trng hp ngun
vo ct v h ti, nhm trnh mt in p ngc t ln transistor hiu chnh.
B n nh ny ti emitter, nn in p hi tip l 100%, nn khng c phn p hi
tip, chnh l mch lp emitter.
- in p chun l in p cc gc Q
1
.
U
ch
= U
B(Q1)
, U
E(Q1)
= U
r
.
Khi U
v
tng (hoc R
t
tng), khin cho U
r
c xu hng tng hn U
r
nh mc, lm cho
U
BE(Q1
=U
ch
-U
r
gim, ngha l phn cc thun ca Q
1
gim, Q
1
gim dn (tng ng r
CE(Q1)

tng), do in p ri trn Q
1
tng, kt qu l U
r
c ko tr li gi tr danh nh.
- Khi U
v
gim (hoc R
t
gim), c xu hng lm U
r
gim, lm in p phn cc U
BE(Q1)

tng, Q
1
tng dn, r
CE(Q1)
gim v in p ri trn Q
1
gim, ko U
r
tng tr li gi tr danh
nh.
Vy mi s bin ng ca U
v
cng nh ca ti u gy nn s thay i ca in p t
trn Q
1
, gi cho U
r
khng i.

r ch BE
U U U = (6.3)
+

R
2
ZD

R
1
C
1
R
3
Uc
h
Ur

+

Rt

Q
1
Hnh 6.3: B n nh vi hiu
chnh ni tip vng khuch i
so snh
UV

Chng 6. n p ngun
119
- s hnh 6.3 vn hnh tt trong di bin i cho php ca U
v
th R
1
c tnh
theo cng thc (6.4)

min
1
1
v ch
Z B
U U
R
I I
=
+
(6.4)
6.3.3. B n nh in p vi hiu chnh ni tip c khuch i so snh
B n nh loi ny cn gi l b n nh c hi tip.
Trong s hnh 6.4:
- Q
1
l phn t hiu chnh.
- Q
2
l b khuch i so snh (khuch i sai lch)
- R
2
, Z
D
to in p chun, U
E(Q2)
= U
ch
.
- R
3
, R
4
l b phn p hi tip (cn gi l mch ly mu in p ra).
R
1
, Q
2
, Z
D
to thnh mch phn cc iu khin Q
1
, C
1
ni song song R
3
, vi iu kin Z
C1
<<
R
3
th b n p ny cn l b lc tch cc i vi thnh phn xoay chiu u ra.

Nguyn l hot ng ca mch
Khi U
V
tng (hoc R
t
tng), c xu hng lm U
r
tng, qua mch phn p hi tip (mch
ly mu) ta c:
( ) ( )
4
2 2
3 4
.
ht r ch B Q BE Q
R
U U U U U
R R
= = = +
+
(6.5)
Ur tng th U
ht
tng, trong khi U
ch
khng thay i, nn U
BE(Q2)
tng lm Q
2
tng dn
khin dng IC
(Q2)
tng, dng IC
(Q2)
chy qua R
1
lm st p trn R
1
tng v U
B(Q1)
gim, Q
1

gim dn (tng ng vi r
CE(Q1)
tng) kt qu l in p ri trn Q
1
(U
CE(Q1)
) tng, ko U
r

tr li gi tr nh mc.
Khi U
V
gim (hoc R
t
gim) th qu trnh din bin ngc li.
Vi s hnh 6.5 ta c:
( )
3
4
1
r ch BE
R
U U U
R
| |
= + +
|
\ .
(6.6)
Mch hnh 6.5 c in p ra c nh, mun in p ra iu chnh c, ta mc ni tip
mt in tr bin i V
R1
vo b phn p R
3
, R
4
nh hnh 6.6.
Hnh 6.5: B n p ni tip c
khuch i so snh
+

R
1
R
2
Q
2
Q
1
C
1
R
3
R
4
Rt

ZD
Uc
h
Uht

Ur

UV

+
Chng 6. n p ngun
120

Mch n nh nh trn hnh 6.5 n nh tt i vi ti thay i, cn khi U
V
thay i th
tc dng n nh khng tt lm (K
u
~ 20) v khi U
V
thay i th dng qua R
2
thay i theo lm
I
Z
thay i. khc phc iu ny, ta thay chc nng ca R
1
, R
2
bng mt ngun dng, nh
hnh 6.7.
Ngun dng bao gm cc linh kin Q
3
, Z
D2
, R
5
, R
e
. U
ZD2
= U
Re
+ U
EB(Q3)
= const v R
e
l
in tr c nh nn U
BE(Q3)
khng i do I
B(Q3)
v I
C(Q3)
khng i.
Dng colect ca Q
3
c xc nh:

( )
( ) 2 3
3
ZD BE Q
C Q
e
U U
I
R
= (6.7)
Vi mch n nh hnh 6.7 th h s n nh K
u
= 10.000100.000 ln.

6.3.4. B n p vi hiu chnh ni tip, dng IC KTT lm b khuch i so snh
Mun tng h s n nh ca b n p m khng phi dng ngun dng, ta dng IC
khuch i thut ton OP-Amp lm b khuch i so snh nh s hnh 6.8. V IC OP-Amp
c h s khuch i rt ln so vi transistor, nn ta dng IC OP-Amp lm b khuch i so
snh th hiu qu n nh s rt cao.
Hnh 6.7: B n p c hi
tip vi ngun dng
+

+
UV
Ur

R
3
VR
1
R
4
R
5
ZD
ZD
Re

Q
3
Q
1
Q
2
C
1
Ur

Uht

Q
2
R
3
R
4
VR
1
Hnh 6.6: B phn p hi tip c
chit p iu chnh in p ra.
Chng 6. n p ngun
121

Trong s hnh 6.8, Q
1
l PTHC, IC OP-Amp lm b khuch i so snh, R
1
, Z
D
to
in p chun a vo u (+) ca IC, in p chun c to t in p u ra ca mch, nn
c n nh rt cao, U
(+)
= UZD = Uch.
R
2
, R
3
to thnh b phn p hi tip a vo u (-) ca OP-Amp; U
(-)
= U
ht
.
Nu mun in p ra iu chnh c ta thay phn p R
2
, R
3
bng b phn p c chit
p VR1 nh s hnh 6.9.
in p ra ca b n p:

( ) ( ) ( )
2
1 1
3
1
r ch r IC BE Q BE Q
R
U U U U U
R
| |
= = +
|
\ .
(6.8)
vi
( )
2
3
1
ch r IC
R
U U
R
| |
= +
|
\ .
( chng minh trong in t tng t)
trong
2
3
1
R
R
| |
+
|
\ .
l h s khuch i ca OP-Amp v U
ch
= U
ZD
.
Khi dng ti yu cu ln, i hi PTHC phi c cng sut ln, t c iu ny, ta
dng PTHC ni theo mch Darlington nh hnh 6.9.
Dng ra ti I
r
= |
2
. |
1
.I
B2max
; I
B2max
l dng cc gc ln nht ca Q
2
, |
1
, |
2
l h s
khuch i dng ca Q
1
, Q
2
.
S Darlington va cho ra dng cao, va c tr khng vo ln, nn ti thay i nhiu
cng khng nh hng n in p u ra ca OP-Amp, nn U
r
rt n nh.
S hnh 6.9, dng ra vn gii hn bi dng collector ca Q
1
. Mun dng ti cao hn
na ta dng PTHC l cc transistor cng sut ni song song nh hnh 6.10.
Hnh 6.8: B n p
dng IC OP-Amp
+

+ +

Q
1
UV

Ur

OP-Amp

R
1
R
2
ZD

R
3
Uht

Ur
(IC)
Hnh 6.9: B n p dng
PTHC l s Darlington
+

+ +

Q
1
UV

Ur

OP-Amp

R
1
R
2
ZD

R
3
VR
1
Ir

Q
2
Ur
(I C)
Chng 6. n p ngun
122
Khi s dng vi mch khuch i thut ton cn nh rng dng ra ca n b hn ch <
20mA, nn khi dng n transistor mc song song, sao cho tng cc dng cc gc ca cc
transistor khng vt qu 20mA: n.I
Bmax
s 20mA, nhm trnh qu ti cho IC.
Khi mc cc transistor song song, phi dng cc transistor c cc thng s ging nhau
(cng tn) v mc ni tip vi cc E ca mi transistor mt in tr R
E
t iu chnh cho
dng qua cc transistor bng nhau.
6.3.5. Cc mch bo v hn ch dng, p
Cc linh kin bn dn rt nhy cm vi dng ln, khi dng qua cc linh kin bn dn
ln th cng sut tiu tn trn n ln v nhit ca lp tip xc tng n mt gii hn th
dng qua lp tip xc bn dn khng cn iu khin c, do bn dn chu qu dng, qu
p km. V vy trong cc mch n p s dng cc transistor cng sut lm PTHC th phi c
thm cc mch bo v trnh qu ti (qu dng) cho phn t hiu chnh v bo v ti khi
PTHC b s c ngn mch.
1) Cc mch bo v qu ti cho PTHC
a) Mch bo v th ng
Trn s hnh 6.3, in tr cng sut R
2
mc ni tip vi PTHC Q
1
v vi ti, nhm
gim in p ri trn Q
1
, khi dng ti tng v nht l khi b ngn mch u ra
(R
t
= 0), th ton b cng sut ca ngun vo u t trn R
2
v trn Q
1
. Trng hp ny nu
khng c R
2
th Q
1
s tiu hao ton b cng sut ca ngun vo khi u ra ngn mch, Q
1
s
b qu ti, dn n d b ph hng. R
2
trnh qu ti cho Q
1
mt cch th ng. Khi mch lm
vic bnh thng th R
2
cng tiu hao nng lng ca ngun, v vy hiu sut ca b n nh
thp, mch bo v th ng ch s dng trong cc b n nh cng sut nh.
b) Mch bo v tch cc
+ Dng transistor:
Hnh 6.10: B n p c dng ra cao
+

Q
2
Q
1
+

+

Re
2
Re
1
Ren

Qn

R
1
R
2
VR
1
R
3
ZD

OP-Amp

Ur

UV

Chng 6. n p ngun
123

Trong s hnh 6.11, Q
1
, Q
2
l PTHC, Q
3
khuch i sai lch.
Q
4
, R
3
l mch bo v tch cc lm nhim v hn ch dng cho PTHC (Q
1
, Q
2
). R
3
l
in tr cm bin dng, R
3
ni gia cc B v E ca Q
4
, in p ri trn R
3
phn cc cho Q
4
.
Tr s ca R
3
sao cho trong iu kin dng ti bnh thng, in p ri trn R
e
U
Re
< 0,7 V,
cha n ngng dn ca Q
4
v Q
4
khng c tc dng trong mch. Khi dng ti I
t
tng, in
p ri U
R3
tng theo cho n khi U
R3
> 0,7V th Q
4
dn, dng I
C4
chy qua R
1
lm in p ri
trn R
1
tng v in p cc gc Q
2
gim, Q
2
, Q
1
gim khuch i v in tr tng ng
gp pht Q
1
tng, in p ri trn Q
1
tng lm in p ra gim, ko dng ti I
t
tr li gi tr
bnh thng.
R
3
trong s hnh 6.11 so vi s hnh 6.3, R
3
c tr s nh hn nhiu so vi R
2
, nn
tn hao t hn, v R
3
c tc dng iu chnh dn ca Q
1
, Q
2
trong khi R
2
ca s
hnh 6.11ch n thun gim cng sut tiu tn cho Q
1
.
+ Dng diode: ta cng c th dng diode lm mch hn ch dng thay th cho
transistor nh trong s hnh 6.12

Mch hn ch dng gm D
1
, D
2
, R
3
.
Khi dng ti bnh thng, in p ri trn R
3
; U
R3
< 0,7V, do U
BE1
+U
R3
< 1,4V th 2
diode D
1
, D
2
khng thng, khi dng ti tng cho n khi U
R3
> 0,7V dn n
U
BE1
+ U
R3
> 1,4V th D
1
, D
2
thng, dng chy qua D
1
, D
2
lm tng in p ri trn R
1
, do
U
B1
gim, Q
1
gim dn s ko dng ti tr li gi tr bnh thng.
Hnh 6.11: Mch hn ch dng (mch bo v tch cc)
IC
4
Uc
h
Q
1

Q
2

Q
3

Q
4

+

+
Ur

R
4

VR
1

R
5
ZD

IT
R
3

Uv

R
1

R
2

Uc
h

Hnh 6.12: Dng diode hn ch dng
Q
1

Q
2

+

+
Ur

R
4

VR
1

R
5
ZD

IT

R
3

Uv

R
1

R
2

0,6
V
D
1
D
2

Uc
h
Uht

Chng 6. n p ngun
124
2) Mch bo v qu p cho ti
Cc b n nh in p c h s n nh ln th in p t vo b n nh c th bin
i trong mt phm vi rng, U
v
ln nht c th ln hn nhiu in p danh nh trn ti (U
r
).
Nu PTHC b s c ngn mch th in p trn ti tng t bin bng U
v
ln nht , s gy
nguy him cho ti. V vy, cc b n nh c hi tip cng sut ln thng c mch bo v
qu p u ra bo v ti khi PTHC b ngn mch.

Trn s hnh 6.13, mch bo v qu p cho ti bao gm Z
D
, R v thyristor SCR.
Diode Zener Z
D
c in p U
Z
ln hn in p U
r
ln nht (khi mch c iu chnh in
p ra t U
rmin
U
rmax
), nn trong di vn hnh bnh thng th diode Z
D
khng thng, in p
ri trn in tr R bng khng v thyristor SCR khng thng, mch bo v qu p khng lm
vic. Khi PTHC b ngn mch, hay mt nguyn nhn g lm U
r
vt qu U
rmax
lm Z
D
thng,
dng qua Z
D
t trn in tr R mt in p m thyristro SCR, thyristor SCR thng, ko in
p ra xung bng in p thun ca thyristor khong t 11,5V v ti c an ton. Khi ,
dng qua SCR ln v cu ch F u vo s chy ngt mch.

6.4. B N NH IN P DNG VI MCH TCH HP 3 CHN
6.4.1. Gii thiu chung v vi mch tch hp 3 chn
- S ra i ca cc vi mch tch hp 3 chn lm cho cu trc cc b n nh in p
1 chiu tr nn n gin v thunh li hn rt nhiu.
Cc vi mch c 3 cc: cc vo (IN); cc ra (OUT) v cc chung (COMMON) hoc cc
iu chnh (adjustment).
- C loi vi mch c ch to theo cc mc in p ra tiu chun dng hoc m
- C loi vi mch c ch to in p ra iu chnh c trong mt phm vi rng
Cc loi vi mch c mc in p ra tiu chun dng c cc k hiu: XX78XX;
XX78MXX; XX78LXX.
Trong :
- S 78 l h n p dng
PTHC
Khuch i
sai lch
Hn dng
To p
chun
Hi tip
UV

Ur

+ +
Mch bo v
qu p
ZD
SRC
R
Hnh 6.13: B n p 1 chiu c hi tip, c mch bo v qu p
F
Chng 6. n p ngun
125
- Trc s 78 c 2 ch do hng ch to t, v d AN, LA, KA,
- Nu sau s 78 l 2 con s ch in p ra l loi vi mch c dng ra cc i
1,5A.
- Nu sau s 78 l ch M th dng ra cc i l 500mA.
- Nu sau s 78 l ch L th dng ra cc i l 100mA.
V d: AN7805; KA7812 l cc vi mch n p dng c mc in p ra +5V v +12V,
dng ra cc i l 1,5A.
AN78M08; KA78L09 l cc vi mch n p dng c mc in p ra +8V v +9V dng
ra cc i ca 2 vi mch l 0,5A v 0,1A.
Cc loi vi mch c mc in p ra tiu chun m c cc k hiu XX79XX;
XX79MXX; XX79LXX.
Trong :
- Con s 79 l h n p m
- Cn cc k hiu khc ging nh h 78
Cc vi mch h 78, 79 thng ch to theo cc mc in p ra t 3V; 5V; 8V; 9V;
12V; 15V; v 24V (du + cho h 78, du cho h 79).
in p vo cc i ca chng l 35V v cng sut tiu tn ln nht ca vi mch l 15
W.
- Cc loi vi mch 3 chn m in p ra n nh v iu chnh trong mt phm vi rng
nh cc loi LM317; LM238, c mc in p ra dng v iu chnh c t 1,2V n 37V,
vi dng ra cc i 1,5A v lm vic vi in p 1 chiu u vo cc i 40V, cng sut tiu
tn ln nht 15W.
Hnh dng bn ngoi v b tr chn cc ca cc IC n p nh hnh 6.14a, b, c.
Cu trc bn trong ca cc loi vi mch n nh 3 chn nh cc hnh di.
Vo
Ming kim
loi tn
nhit
V cht
do
Ra
Chung
Chung Ra
Vo
(a) H 78 (b) H 79
iu
chnh
Ra
Vo
Ming kim
loi ta
nhit
V cht do
(c) in p ra iu chnh c
Hnh 6.14: Hnh dng bn ngoi v b tr chn ca cc loi vi mch n nh 3 chn
Chng 6. n p ngun
126

Cu trc chung ca cc IC n nh kiu 3 chn bao gm:
- 1 transistor lm phn t hiu chnh.
- 1 mch so snh.
- 1 mch to in p chun dng ngun dng.
- 1 mch bo v hn ch dng.
Cc mch so snh u l mch khuch i vi hi tip 100% nn c h s khuch i
bng 1. V vy in p gia chn ra v chn chung (vi IC h 78, 79), in p gia chn ra
vi chn iu chnh (loi IC c in p ra iu chnh) bng in p chun (in p ca diode
Zener). Do , vi 2 loi vi mch h 78, 79, mi loi vi mch ng vi mt mc in p ra nn
Ngun
dng
4mA
+
Bo v
So snh
Transistor hiu chnh
it zener Uchu
n
Vo Ra
Chung
Hnh 6.15: Cu trc ca IC n
nh h n p dng v in
p ra tiu chun XX78XX
Ngun
dng
4mA
+
Bo v
So snh
Transistor hiu chnh
it zener Uchu
n
Vo Ra
Chung
nh h n p m v in p
ra tiu chun XX79XX
Ngun
dng
50A
+
Bo v
So snh
Transistor hiu chnh
it zener
Uch=1,25
V
Vo Ra
iu chnh
nh c in p ra iu chnh
c
Chng 6. n p ngun
127
mi loi c mt diode Zener ring. Cn loi vi mch c in p ra iu chnh c u dng
diode Zener to p chun c U
Z
= 1,25V.
6.4.2. Cc mch n nh in p dng vi mch tch hp 3 chn
u vo v u ra c ni cc t C
1
, C
2
c tr s t 10 100nF ngn mch cc xung
nhiu cao tn, khng nh hng n s lm vic ca cc vi mch, u ra c cc t lc C
2
l t
ha ngn mch cc thnh phn xoay chiu tn thp ca ti.
Cc vi mch n nh chu in p ngc km trong trng hp u ra h mch trc khi
u vo ct ngun hoc ngn mch, th in p u ra vn c tch trn C
2
cn
U
v
= 0, lc ny vi mch chu in p ngc (U
r
> U
v
), trnh hin tng ny, ngi ta ni 1
diode D gia u vo v u ra ca vi mch theo phn cc ngc, v C
3
s phng qua diode D v
ngun dng lm cho U
R
gim nhanh. Diode D c vai tr bo v vi mch, chng in p ngc
cho vi mch.

Cc s n nh in p dng cc vi mch c in p ra iu chnh c trong phm
vi rng nh hnh 6.19 in tr R
1
ni gia chn ra v chn iu chnh gi l in tr lp trnh,
chit p V
R1
ni gia chn iu chnh vi im chung ca mch xc nh (iu chnh) in
p ra. Dng qua R
1
chnh l dng qua V
R1
.
1
1
1 1 1
1, 25
R
ch
R
U
U V
I
R R R
= = = (v dng ti chn iu chnh l rt nh (50A) nn b qua v
dng qua R
1
bng dng qua V
R1
).
in p gia chn iu chnh vi im chung (U
VR1
) gi l in p iu chnh Uc
1
1 1 1
1 1
. . 1
ch
r R VR ch dc ch R ch
R
U R
U U U U U U V U
R V
| |
= + = + = + = +
|
\ .

Hnh 6.18: S ni mch n nh in p dng vi mch 78 v 79
XX78XX
C
1
C
2 C
3
Chung
D

UV

Ur

XX79XX
C
1
C
2
C
3
Chung
D

UV

Ur

vo ra
vo ra
1
2
3
2
1
3
Hnh 6.19: S ni mch
n nh in p dng vi
mch iu chnh c Ura
LM317
UV

Ur
a
D

C
1
C
2
VR
1
R
1
iu chnh
(ADJ)

1
2
3
Chng 6. n p ngun
128
V U
ch
= 1,25V nn
1
1
1, 25 1
r
R
R
U
V
| |
= +
|
\ .
(6.9)
Tt c cc IC n nh, chng c th lm vic c trong gii n nh th in p u
vo thp nht
U
vmin
= U
r
+ 1,5V (6.10)
Nu in p t vo thp hn th transistor hiu chnh trong vi mch s chuyn sang
trng thi bo ha, khi mch khng cn n nh c na.
6.4.3. Cc mch nng cao in p ra v dng ra
Cc h vi mch 78 v 79 u c mc in p ra c nh, nu ti cn in p ra cao hn
in p ra ca vi mch sn c, th ta c s mch nh hnh 6.20a, b.

T s a) ta c:
( ) r Z r IC
U U U = +
Chn diode Zener c
( )
1
r IC
Z chung
U
I I
R
= + . Cc vi mch h 78, 79 c dng chn chung,
I
chung
= 0,004A.
S b): Ur = UR
1
+ UR
2
= Ur
(IC)
+ UR
2

( )
2 2
1
0, 004
r IC
R
U
U R
R
| |
= +
|
|
\ .
(6.11)
S hnh 6.21 l mch nng cao dng ra. Cc vi mch n nh c dng ra thp (ti a
1,5A) ta mun dng cp cho ti ln hn dng ra ca vi mch cn in p ra ti n nh bng
in p ra ca vi mch, ta ni mch theo s hnh 6.21.

Hnh 6.21: S
nng cao dng ra.
XX78XX
UV

Ur

+ + T
1
IT
1
Ir

I
(IC)
C
1
R
1
C
2
C
3
C
4
Hnh 6.20: S nng cao in p ra
XX78XX
C
1
C
3
C
4
Chung
UV

Ur

IR
1
IZ
ZD

Ichu
ng
C
2
Vo Ra
XX78XX
C
1
C
3
C
4
Chung
UV
Ur

C
2
Vo Ra
R
1
R
2
a)

b)

1
2
3 1
2
3
Chng 6. n p ngun
129
Trong s dng thm mt transistor cng sut T
1
, cng vi transistor hiu chnh trong
vi mch to nn mt bin th ca s Darlington, ta c Ir = I
(IC)
+ IT
1

6.5. NGUN N P I XNG
Ngun n p i xng (cn gi l ngun n p lng cc) thng c s dng rt
nhiu nh ngun cp cho cc mch dng vi mch khuch i thut ton, mch s
Ngun n p i xng l ngun c 2 in p ra n nh c gi tr bng nhau, c cc tnh
ngc nhau v i xng qua im chung.
c ngun n p i xng th cn phi c ngun i xng, ta c th to ra ngun i
xng t ngun mt chiu hoc t ngun xoay chiu nh hnh 6.22a, b.

Nu ti cn cng sut ln (dng ln) ta dng s n p i xng l transistor nh s
hnh 6.23.
Trong s : cc transistor T
1
, T
2
v T'
1
, T'
2
l phn t hiu chnh ca 2 v, theo mch
Darlington tng dng ra.
- T
3
, T
4
, R
2
v T'
3
, T'
4
, R'
2
l b so snh dng mch khuch i vi sai.
R
1
v R'
1
nh thin ban u (khi ng ngun u vo) cho T
4
v T'
4
.
R
3
, Z
D1
v R'
3
, Z'
D1
to in p chun cho cc b khuch i vi sai ca 2 v. Sau khi c
Ur th to in p chun t in p ra qua D
1
v D'
1
.
R
4
, VR
1
, R
5
v R'
4
, VR'
1
, R'
5
l phn p hi tip t u ra 2 v v cc b so snh.
Cc chit p VR
1
v VR'
1
iu chnh Ur
(+)
, Ur
(-)
l 2 chit p ng trc.

Hnh 6.22: To ngun i xng
+
U
+
U

UV

2
V
U
2
V
U
C
1
C
2
0

C
1
C
2
+
U
+
U

0

U
~
a)
b)
+

+

Chng 6. n p ngun
130

Nu dng ra ti gii hn bng dng ra ca cc vi mch tch hp 3 chn, ta s dng cc
vi mch h 78, 79 ni mch n p i xng cho n gin.

6.6. MCH N DNG
Cc mch n dng (hay cn gi l ngun dng c nh) cung cp cho ti mt dng c
nh khi ti thay i hoc in p vo thay i.
6.6.1. Mch n dng dng transistor
Hnh 6.23: S n p i xng dng transisitor
UV
Ura
+
T
1
T
2
T
3
T
4
D
1
R
3
R
4
R
5
VR
1
R
2 ZD
R
1
0

UV
Ura

R'
4
Z'
D1
R'
5
VR'
1
D'
1
R'
3
T'
3
T'
4
R'
1
T'
1
T'
2
R'
2
Hnh 6.24: S n p i xng
dng vi mch n nh 3 chn
XX78XX
XX79XX
UV Ur
+
+ +

UV Ur

Chng 6. n p ngun
131

- Mt transistor cng sut loi P-N-P ni tip vi ti theo mch cc gc chung vi vai
tr l PTHC.
- R
1
ni tip vi cc Emitter ca T
1
c nhim v hiu chnh in p U
EB
ca T
1
khi dng
I
E
bin i v nhit v gim cng sut tiu tn T
1
khi ti gim qu nh hay ngn mch ti.
Diode Zener Z
D
ni gia ng ngun vo vi cc B ca T
1
cng vi R
2
to p chun
cho T
1
.
Tnh dng ti:

1
1 1
ch EB R
t c E
U U U
I I I
R R
= ~ = = (6.12)
(v dng I
B
<< nn ta coi I
E
=I
C
)
T (5.14) ta thy dng ti ch ph thuc vo in p chun ca Zener U
ch
, vo U
EB
v
R
1
, m khng ph thuc vo in p t vo U
V
v in tr R
t
. Cn cc s hng: R
1
l c nh,
U
ch
l in p n nh ca Zener v U
EB
n nh tt theo cc thng s thit k trong gii lm
vic ca mch khi R
t
bin i.
Tuy nhin, khi U
V
bin i th U
ch
cng thay i nh v U
EB
bin i t 0,6V0,7V, nn
dng ti cng bin i t khi U
v
thay i.
6.6.2. Mch n dng dng IC n nh 3 chn
C th dng cc loi vi mch n p 3 chn nh cc h n p dng, n p m (h 78 v
79) hoc h n p c in p ra iu chnh c (LM317, 238) lm mch n dng, c s
nh hnh 6.26.

Ni in tr R
1
gia chn ra v chn iu chnh (ADJ) (vi h 78 th R
1
ni gia chn ra
vi chn chung) gi tr in tr R
1
xc nh dng ti (vi loi LM317 hay LM238), dng ti
chn iu chnh 50A l rt nh, nn b qua), ta c:

1
1
1 1 1
1, 25
ch R
t R
U U V
I I
R R R
= = = = (6.13)
Hnh 6.25: Mch n dng
dng transistor
R
1
T
1
It

C

E

B

ZD

R
2
Rt

IE

Uc
UV

+
Ur

Hnh 6.26: Mch n dng
dng IC n p 3 chn
Ra Vo
C
2
C
3
3

LM317
+
UV

IR
1
R
1
It

Rt

iu chnh
(ADJ)
1

2

Ur

Chng 6. n p ngun
132
Khi dng vi mch n p 3 chn lm mch n dng th hiu sut thp, nht l vi cc h
78, 79.

1
% .100
Rt Rt
v Rt R IC
P P
P P P P
q = =
+ +
% (6.14)
Trong : P
V
tng cng sut mch nhn t ngun,
P
Rt
: cng sut cp cho ti.
P
R1
: cng sut tn hao trn R
1
.
P
IC
: cng sut tn hao trn vi mch.
6.7. NGUN N P MT CHIU KIU CHUYN MCH
6.7.1. Khi nim v ngun n p kiu chuyn mch
Vo gia nhng nm 70 ca thp k 20 ra i mt loi ngun n p mi l ngun
chuyn mch (Switching Power) (cn gi l ngun n p xung). Ngun cp in kiu chuyn
mch khc phc c tt c cc nhc im ca b ngun n p tuyn tnh.
Trc ht ta kho st v d hnh 6.27 bit c khi nim v ngun chuyn mch.

Chc nng cc phn t trong mch hnh 6.27:
+ Transistor
1
T lm nhim v chuyn mch nhanh di s iu khin ca mch iu
khin, bin in p mt chiu u vo
v
U thnh chui xung vung ti cc E.
+ it ghim (free-weeling diode) lm nhim v ghim mc in p t trn
1
T khng
vt qu in p
V
U khi
1
T tt, v m bo dng ra
r
I l lin tc khi
1
T tt.
+
1
L l cun chn phi c tr s in cm ln, cng vi
1
C lm thnh b lc
1 1
L C
to in p mt chiu
r
U vi h s gn sng cn thit.
+ Mch iu khin: to chui xung vung chu k T iu khin
1
T . Xung iu khin t
trn 2 cc B v E ca
1
T .
Nguyn l hot ng ca mch:
iT
1

Mch iu
khin
Uv
T
1

L
1

D
1
C
1

u
1

Ir
+

Ur
Hnh 6.27: M t khi nim v ngun chuyn mch
Chng 6. n p ngun
133
Khi xung iu khin mc cao (Hnh 6.28) (thi gian m:
m
t ),
1
T thng bo ho (
1
T m),
c dng
1 T
i t
v
U + qua
1
T ,
1
L , ti, gi thit lc
1
T m, st p trn
1
T bng 0, v in p
1
u bng
v
U (Hnh 6.28). Dng
1 T
i qua cun chn
1
L , cun chn
1
L tch nng lng di dng
t v
1
D tt do phn cc ngc.
Khi xung iu khin mc thp,
1
T ng (hay ngt),
1 T
i v 0, lc ny trn
1
L xut hin
sc in ng t cm lm
1
D phn cc thun v dn, c dng
1 D
i khp kn qua ti (Hnh
6.28d).

Ta c
1 r T
I i = (khi
1
T ng)
1 D
i + (khi
1
T m) l lin tc v bng phng nh c b lc
u ra
1 1
L C (hnh 6.28e). in p ra
r
U l in p trung bnh ca in p
1
u hay l gi tr
DC.

m
r v v
t
U U U
T T
o
= = (6.15)
trong
v
U l tr s in p mt chiu (DC) u vo,
m
t thi gian chuyn mch
1
T m
hay rng o; T chu k m
1
T .
Khi
1
T thng, in p
1
u tng t bin bng
v
U v gi nguyn gi tr trong thi gian
1
T
thng, lc
1
T bt u tt,
1
u gim t bin v 0, dng in p
1
U ging dng in p iu
khin.
Uk

u
1

Uv
T

tm (o)
i
T1
i
D1
i
L1
Ir

I
2
I
1
I
2
I
1
a)

b)

c)

d)

e)

Hnh 6.28: Cc dng in p, dng in ti cc im ca mch hnh 6.28
Chng 6. n p ngun
134
Dng dng chuyn mch
1 T
i qua cun chn
1
L khng ging nh dng in p
1
U , v
dng chuyn mch qua cun cm, do tnh cht ca cun cm nn dng qua cun cm khng
tng v gim mt cch t bin.
Khi
1
T m, gi thit thi im , st p trn
1
T bng 0 nn c 1 in p khng i
trn
1
L l
v r
U U vi in p khng i trn
1
L , dng qua n tng mt cch tuyn tnh t
1
I
n
2
I vi tc
1
1
v r L
U U di
dt L
= , iu ny gii thch cho dng

1 T
i qua cun chn
1
L tng
tuyn tnh nh hnh 6.28c.
Khi
1
T ng, in p (sc in ng t cm) trn
1
L phn cc ngc ngay, c duy tr
dng
2
I m chy qua trc khi
1
T tt. S phn cc ngc ny gi l tc ng ngc ca
cun cm
1
L , nh c it
1
D m lc ny in p im trc ca
1
L (im bn tri
1
L ) c
cht mc (-1V) so vi t (in p thun trn it l 0,7V, ly trn l 1V), v in p phn
cc ngc trn
1
L lc ny l 1
r
U + , in p ny to mt dng
2 D
i gim t
2
I n
1
I mt
cch tuyn tnh vi tc
1
1
1
d r
di U
dt L
+
= nh trn hnh 6.28d.
Dng qua
1
L l
1 L
i l tng ca dng
1
T lc m v qua
1 D
i lc
1
T tt l dng rng ca
nh hnh 6.28e, v
r
I l dng trung bnh ca ,
1 L r
I I l thnh phn mt chiu thun tu nh b
lc
1 1
L C .
Nu khng c
1
D th khi
1
T tt, in p t bin t trn
1
T s l ( )
1 v L r
U U U + , in
p t bin trn
1
L rt ln lm transistor chuyn mch
1
T d b ph hng. Khi c
1
D th in
p ti cc E ca
1
T c ghim mc (-1V) so vi im t, do in p m
1
T chu ng
khi n tt ch l ( ) 1
v
U + , v vy
1
D c tn l it ghim (free-weeling diode). Cc b ngun
hot ng theo chu k ng-m bin i t in p mt chiu thnh mt chiu nh hnh
6.27 th gi l ngun chuyn mch.
Nhc li cng thc tnh in p mt chiu u ra biu thc 6.15:
r v
U U
T
o
= ; trong
T
o
= t c gi l h s lp y.
Ta thy in p mt chiu u ra
r
U ph thuc in p mt chiu u vo
v
U ; rng
xung iu khin o v chu k xung iu khin T.
Mun
r
U khng i khi
v
U thay i, hoc mun
r
U iu chnh c khi
v
U khng
i, ta thay i h s lp y t.
C 3 phng php iu khin t:
- thay i o v gi nguyn T.
- thay i T v gi nguyn o.
Chng 6. n p ngun
135
- thay i kt hp c T v o.
Phng php thay i o v gi nguyn T, c gi l phng php "iu ch rng
xung" (Pulse-Width Modulation PWM). Phng php iu ch ng rng xung c s dng
ph bin nht trong cc b n p kiu chuyn mch.
Khi in p
v
U tng, c xu hng in p
r
U c th tng hoc khi ti gim, xu hng
r
U tng th khi iu khin gim rng xung iu khin (o) v ngc li.
Khi mun tng in p ra, ta tng rng xung iu khin v ngc li.
Cc b ngun chuyn mch c n nh in p ra c gi l ngun n p kiu chuyn
mch (hay cn gi l ngun n p xung, ngun n p ngt qung)
Mch in nh hnh 6.27 hot ng theo nguyn l "iu ch rng xung" n nh
in p mt chiu u ra l mch "n p chuyn mch BUCK".
6.7.2. S khi tng qut ca b ngun n p kiu chuyn mch theo nguyn l iu
ch rng xung

Hnh 6.29: S khi tng qut ca b ngun n p kiu chuyn mch
(1) Mch lc nhiu tn s cao u vo.
(2) mch chnh lu v lc s cp.
(3) mch chuyn mch chnh (chuyn mch tn s cao)
(4) mch chnh lu v lc th cp.
(5) mch hi tip
(6) mch khuch i sai s (khuch i vi sai).
(7) mch to in p chun
(8) mch to in p sng tam gic.
(9) (6)

(5)

(7)
Khi iu khin
UV
~

380/220V
UR
DC
(10)
(1) (2) (3) (4) (11)
P
Bo v
Uch

(8)

Uht

Chng 6. n p ngun
136
(9) mch iu ch rng xung.
(10) mch khuch i v o pha.
(11) mch hiu chnh h s cng sut (PFC) cc b ngun cng sut ln.
Nu b ngun lm vic vi in p vo l AC, th:
~ V
U l in p dy (380V) vi b ngun cng sut ln.
~ V
U l in p pha (220V) vi b ngun cng sut nh.
Nu b ngun lm vic vi in p vo l DC (t accu hay dn pin mt tri) th khng
c mch chnh lu v lc s cp (2).
u vo (9) cn c cc tn hiu khng ch khc nh tn hiu bo v (P) t ng tt
b ngun khi c s c.
Tn s cng tc (tn s chuyn mch) ca b ngun l tn s ca mch to xung tam
gic (8) trong khong 10kHz 100kHz, lm vic vi tn s no trong di tn s ny tu thuc
vo tng b ngun. Cc b ngun dng trong vin thng thng nm trong khong 30kHz
85kHz vi khong tn s , cc bin p xung, cun chn c li pheris c h s t thm ln,
do s vng dy cng nh kch thc, trng lng ca bin p xung v cun chn gim i
rt nhiu v tn hao mt chiu trn cc phn t cng rt t. Tr s v kch thc t lc san
bng rt nh. Nu tn s cao hn, th hiu sut ca b ngun gim thp v tn hao ca b
ngun t l nghch vi chu k chuyn mch T, v khi tn s cao th nng lng in s bin
thnh nng lng t trng, in trng v pht x ti ch trn cc dy dn, bin p, cun
chn.v.v nn hiu sut ca b ngun s thp.
Mch chuyn mch chnh s dng cc transistor lng cc, MOSFET, IGBT cng sut
ln, c tc chuyn mch cao, cng tc 2 trng thi bo ha v ngt nn c tn hao nh so
vi transistor PTHC trong b ngun tuyn tnh, nn ta nhit cho cc transistor chuyn mch
n gin, v vy dng ra ca b ngun c th rt ln, hng trm Ampe.
So vi b ngun n p tuyn tnh, b ngun n p kiu chuyn mch c nhng u im
ni bt:
- Hiu sut cao ti trn 90%.
- Di n nh rng.
- Cng sut ln.
- Kch thc, trng lng nh.
Tuy nhin cc b ngun n p chuyn mch c nhc im l gy nhiu ln (nhiu tn
s v tuyn RFI) cho cc thit b khc. Cu trc mch in phc tp.
6.7.3. Mt s mch trong b ngun n p kiu chuyn mch
6.7.3.1. Mch lc nhiu tn s cao u vo
Chng 6. n p ngun
137
B ngun chuyn mch tn s cao, nn n sinh ra rt nhiu thnh phn hi bc cao,
cc tn s hi ny nm trong di tn s v tuyn, nn b ngun s l mt ngun gy nhiu rt
ln tn s cao (RFI) cho cc thit b khc trong vng, nht l cc thit b thu v tuyn.
Nu trn ng dy vo c cc tn hiu nhiu ln cao tn lm in p vo t bin s
nh hng ln n s lm vic ca chuyn mch.
Do nhim v ca mch lc nhiu u vo l:
Chn cc nhiu cao tn ca b ngun khng ra ng dy gy nhiu.
Chn cc nhiu cao tn t ng dy khng vo b ngun nh hng n s lm
vic ca phn t chuyn mch.
Khng tn hao i vi dng in vo (dng mt chiu hay dng AC 50Hz)
T cc yu cu trn mch lc nhiu u vo c cu trc nh hnh 6.30.

Hnh 6.30: Cc mch lc nhiu tn s cao u vo
a) mch lc nhiu vi u vo 2 dy; b) mch lc nhiu vi u vo 3 dy 3 pha.
Hai u mch lc nhiu c cc t in tn s cao (khong vi chc nF) ni gia cc dy
dn vi t, ni tt cc xung nhiu cao tn khng i xng gia cc dy dn vi nhau v
gia cc dy dn vi t, i vi dng in tn s 50/60Hz th tr khng ca cc t in
C
1

C
2
C
3

L
1

L
2

C
4

C
6
C
5

a)
C
1
C
2

C
3

C
4
C
5
C
6

C
12
C
11
C
10

C
8

C
9

C
8

L
1

L
3

L
2

b)
Chng 6. n p ngun
138
gn nh l v cng. Cc cun chn cao tn ,
1 2
L L v
,
,
1 2 3
L L L c cng s vng dy, cng
chiu cun dy v cun trn cng 1 li, nh vy s c tr khng rt ln i vi cc nhiu cao
tn cng chiu (nhiu i xng) trn cc dy dn, cn i vi dng cng tc ngc chiu v
tn s 50/60Hz th cc cun chn c tr khng coi nh bng 0.
6.7.3.2. Mch chnh lu v lc s cp
B ngun m u vo l ngun AC th phi c mch ny trc khi vo mch chuyn
mch chnh. Ngun AC vo c th l 1 pha (2 dy) nu b ngun cng sut va v nh, hoc
3 pha (3 dy) nu b ngun cng sut ln. Mch chnh lu v lc s cp c nhim v bin
dng in xoay chiu tn s 50/60Hz thnh mt chiu v ch cn lc s b bng t in ri
cung cp cho mch chuyn mch chnh, cc mch chnh lu thng dng l mch chnh lu
cu 1 pha v cu 3 pha nh hnh 6.31.
Nu mch lm vic vi in p xoay chiu 1 pha 2 mc 120/220V th mch chnh lu,
lc s cp nh hnh 6.31a. Khi lm vic vi in p 120V th chuyn mch
1
S ng v mch
chnh lu 4 it v 2 t lc ,
1 2
C C lc ny hot ng nh 1 mch chnh lu bi p ton sng.

Khi lm vic vi in p 220V th chuyn mch
1
S h v mch chnh lu lc ny l
chnh lu cu 1 pha, vi mch chnh lu ny th mch chuyn mch chnh thng ni theo
kiu bn cu.
Hnh 6.31: Cc mch
chnh lu v lc s cp
thng dng trong b
ngun chuyn mch.
120 - 220VAC
D
1
D
3
C
1
D
2
D
4
C
2
320 VDC
+

a)
220V (120)
C
1
+

b)
380 VAC
C
1
C
2
560 VDC
+

c)
S
1
Chng 6. n p ngun
139
Nu b ngun lm vic vi in p 1 pha, mt mc v chuyn mch chnh ni theo kiu
cu th mch chnh lu v lc s cp nh hnh 6.31b, chnh lu l kiu cu 1 pha v lc bng
1 t in
1
C .
Nu b ngun cng sut ln, lm vic vi in p 3 pha (380V) th dng mch chnh
lu v lc nh hnh 6.31c. V in p sau chnh lu kh cao (550 600V) nn dng 2 t in
ni tip gim in p chu ng ln t v chuyn mch chnh l 2 na cu ni tip nhau.
6.7.3.3. Mch chuyn mch chnh (chuyn mch tn s cao) v chnh lu, lc th
cp
Khi ny cn c gi l "B bin i mt chiu vo mt chiu" mch in trong khi
ny rt a dng, ty thuc cng sut ca b ngun, in p vo v cc yu cu k thut khc.
Ta ch a ra mt s mch thng hay dng nht.
1) Mch c in p ra cao hn in p u vo
Mch hnh 6.27 m ta xt mc 6.7.1 c in p mt chiu ra thp hn in p mt
chiu u vo ( )
r v
U U < . Mun c in p ra cao hn in p u vo, ta s dng mch hnh
6.32.

Mch ny cn gi l b n nh c khuch i (Boost Regulator) hay mch c bc
tng (step-up). Khi
1
T m (xung iu khin mc cao),
1
D tt do phn cc ngc, dng qua
cun chn
1
L v
1
L c tch tr mt nng lng di dng t trng. Trong thi gian
1
T
m, dng cp cho ti hon ton t
1
C ,
1
C phi chn ln cung cp dng ti trong thi
gian
m
t vi s gim bin l nh nht.
Khi
1
T tt, dng qua
1
T mt t ngt nhng dng qua
1
L khng th thay i ngay c,
nn xut hin sc in ng t cm trn
1
L , v by gi im khng chm (im di) ca
1
L
l dng so vi im c chm (im trn), im c chm ca
1
L l
v
U + , nn by gi nng

+

Uv
t
m
t
t
L
1

D
1

C
1

R
1

R
2

Rt
+

+
PWM KSS
Uch

+
T
1

Hnh 6.32: Mch c in p ra cao hn in p vo.
Chng 6. n p ngun
140
lng tch tr trn
1
L np cho
1
C thng qua it
1
D vi 1 in p cao hn
v
U ( )
1 v L
U U + v
lm y li in p trn
1
C m n phng cho ti khi
1
T m.
Mch ny cho cng sut mt chiu u ra thp (Pr < 100W) v c in p mt chiu
u vo thp d to in p mt chiu u ra n nh v cao hn in p vo.
Mch hnh 6.32 c in p u ra:
,
1
2
1 1 0 7
m
r ch v
t
t R
U U U
R t
| | | |
= + = +
| |
\ . \ .
(6.16)
Trong :
ch
U l in p chun a n u (+) ca b khuch i sai lch.
,
1 2
R R cc in tr trong mch phn p hi tip.
m
t thi gian
1
T m ( rng xung iu khin o)
t
t thi gian
1
T tt.
0,7V in p ri trn it
1
D khi thng.
2) Mch o pha cc tnh
Mch chuyn mch ca b ngun n nh kiu chuyn mch, to in p n nh u ra
c cc tnh ngc vi cc tnh ca in p vo, hnh 6.33.

Khi
1
T m, dng t
v
U chy qua cun chn
1
L , in p trn cc E ca
1
T bng
v
U , v
D tt do phn cc ngc, cun chn
1
L c tch nng lng di dng t. Khi
1
T tt trn
1
L
c phn cc ngc (u c chm ca
1
L m so vi im t di) duy tr dng qua n
khng i lm
1
D thng v
1
C c np, n khi
1
T m th
1
D tt v
1
C li phng qua ti,
to cho in p
r
U c cc tnh ngc vi
v
U .
B qua tn hao trn cc phn t, in p mt chiu u ra c tnh theo cng thc 7.3.
+

+
Uv
Ur
T
1
D
1
C
1
L
1
R
1
R
2
Uc
h

KSS

tm tt

+

PWM

Hnh 6.33: Mch o pha cc tnh
Chng 6. n p ngun
141

m m
r v v v
m t
t t
U U U U
t t T T
| | o
= = =
|
+
\ .
(6.17)
3) Mch chuyn mch n bin i thun
Cc mch hnh 6.27, 6.32, 6.33 u c im chung gia in p u ra v in p u
vo, nn in p ra khng cch ly vi in p vo. Mch chuyn mch n bin i thun
c trnh by trn hnh 6.34 c s dng rt ph bin trong cc b ngun chuyn mch c
cng sut ra nh hn 500W v in p u vo nh hn 200Vdc. Mch hnh 6.34 cn cho ta
mch ra cch ly vi mch vo v in p ra c th c nhiu mc khc nhau bng cch thay
cun chn
1
L trong hnh 6.32 bng mt bin p xung, th cp c nhiu cun dy.

Pha s cp bin p xung c 2 cun dy,
11
W l cun s cp chnh;
12
W l cun dy ti
lp (reset), s vng ca 2 cun bng nhau v cng chiu cun. Pha th cp c th c nhiu
cun dy ty theo cc mc in p ra m ti yu cu. in p hi tip c ly t ngun ra
chnh ( )
1 r
U . Mch hnh 6.34 cn mt thun li l nu mt trong nhng u ra cn in p
o cc vi cc u ra khc th ch cn o chiu cc it, t in lc v cun dy th cp ca
ca mch chnh lu th cp . Khi
1
T m, c dng s cp t
v
U + chy vo im c chm
ca cun s cp W
11
, in p
v
U t trn W
11
v im c chm ca W
11
l dng i vi
im khng chm (im di ca W
11
), v cc cun th cp cng chiu cun dy vi cun s
cp, nn cc u c chm ca cc cun th cp cng cm ng cc in p dng so vi cc
u khng c chm nn cc it chnh lu ,
2 3
D D c phn cc thun, cc dng chnh lu
chy ra t cc im c chm ca cc cun th cp n cc b lc LC v cc ti. Nh vy cng
sut cp cho ti khi transistor
1
T ang m ngc li vi cc mch hnh 6.32 v 6.33, nn
mch hnh 6.34 c gi l mch "bin i thun" hay cn c gi l mch "ng pha dn"
W
22

D
3
D
5
L
2
C
2
U
r2
W
21

D
2
D
4
L
1
C
1
U
r1
Tr

Mch iu
khin U
ch
U
v
+

W
12

W
11

Hnh 6.34: Chuyn mch n bin i thun

D
1
Chng 6. n p ngun
142
(v khi transistor m th cun s cp, th cp u c in p, cc it chnh lu lm vic v
dng chy n ti, tt c u din ra khi
1
T m).
H thng mch sau cc catt ca it chnh lu ging nh ,
1 1
D L ca b n nh BUCK
hnh 6.27, ,
4 5
D D hot ng nh cc it ghim, khi
1
T tt v sc in ng t cm trn ,
1 2
L L
xut hin.
Nu k n st p trn transistor
1
T khi m l 1V, in p thun t trn cc it chnh
lu l 0,7V, b qua tn hao rn bin p xung v cc cun chn, cc in p mt chiu ra c
tnh nh sau:

( )
( )
, .
, .
21
1
11
22
2
11
1 0 7
1 0 7
m
r v
m
r v
t W
U U
W T
t W
U U
W T

=
`
)

=
`
)
(6.18)
Khi T
1
tt, nng lng tch tr trong t cm ca bin p Tr lm phn cc ngc in p
trn W
11
. By gi tt c nhng u c chm ca cc cun s cp v th cp s m i vi
nhng u khng chm, v im c chm ca cun W
12
s m nhanh, v 2 cun W
11
v W
12
c
cng s vng, cng chiu cun v ni tip nhau, nn im khng chm ca W
11
dng so vi
im c chm ca W
12
v in p t bin trn W
11
v W
12
lc ny s rt ln, t nht l 2 ln
Uv, gy ra transistor T
1
thc l v ph hng n. it D
1
ni ngang qua 2 u khng chm ca
W
11
v u chm ca W
12
, cht in p trn W
11
, W
12
lc ny bng st p thun ca D
1
l 1V
(ly trn) bo v cho transistor T
1
khng b ph hng.
Dng chy qua cun W
11
l dng mt chiu, v vy vng t tr ca li bin p Tr dn
dn s b y i theo mt hng khc m khng ti lp li v tr ban u ging nhau sau mi
chu k nh nhng li c dng xoay chiu trong cc cun dy, iu dn n li lm vic
trong vng bo ha, v tn hao s rt ln, v transistor s b ph hy. trnh trng thi ny,
cun dy ph W
12
c nhim v ti lp li im xut pht ca vng t tr v ng v tr ban u
trn vng t tr trc khi dch chuyn cng hng mt ln na trong chu k tip theo. Ngha
l cun dy W
12
m bo cho vng t tr trong li bin p Tr hon ton ging nhau t im
xut pht, hng i, im cui cng v ng v tt c cc chu k trong thi gian mch
hot ng, gi cho li st t khng bo ha.
+ in p chu ng ln nht lc tt trn transistor cng sut:
Trong mch bin i thun hnh 6.34, s vng dy ca cun ti lp (Reset) W
12
bng s
vng dy ca cun W
11
, in p ln nht lc tt trn transistor cng sut gp 2 ln in p Uv
ln nht cng vi xung nhn r do in cm r ca bin p v dy dn (v tn s cao).
Chng 6. n p ngun
143

Nh m t trn hnh 6.35, trong thc t bin xung nhn r chim khong 30% ca 2
ln in p vo ln nht. Do in p t trn transistor cng sut lc tt ln nht l:
( )
max max
, 1 3 2
c v
U U = (6.19)
4) Mch chuyn mch y ko
Mch chuyn mch y ko c trnh by trn hnh 6.36.
tm

xung nhn r
2 Uv
Uv
0 V
Hnh 6.35: Dng in p trn cc C ca transistor cng sut
trong b bin i thun - n.
Chng 6. n p ngun
144

u ra yu cu c bao nhiu mc in p th c by nhiu cun th cp. u ra no o
cc vi cc u ra khc th cc it chnh lu ca u ra c ni i chiu (D
5
, D
6
). Mt
chu k ca xung iu khin 2 transistor chuyn mch T
1
, T
2
thay nhau lm vic.
Mi cun s cp c in p Uv t ln n khi transistor ni tip vi n thng, mt chu
k ca xung iu khin c 2 dng v 2 in p Uv thay nhau t ln 2 na cun s cp mi
khi transistor ni tip vi 2 na cun s cp thng. V vy mch y ko ging nh 2 mch
n bin i thun ni song song nhau v lm vic ngc pha nhau, nn cc mch chnh lu
pha th cp l chnh lu ton sng vi cc cun th cp ra im gia.
in p hi tip ly t u ra chnh Ur
1
.
Khi iu khin phi to ra 2 chui xung c rng thay i ging nhau nhng ngc
pha nhau iu khin 2 transistor chuyn mch T
1
, T
2
.
- Gi s khi transistor thng, in p tren n l 1V v in p thun trn it l 0,7V, b
qua tn hao trn bin p, cun chn, ta c in p mt chiu ra:
D
6

D
5

L
3

Ur
3

()
W
23

W
23

D
4

D
3

L
2

Ur
2

(+)
W
22

W
22

D
2

D
1

L
1

Ur
1

(+)
W
21

W
21

C
3
C
2
C
1
Khi iu khin
W
11

W
11

T
1

T
2

+ Uv
Hnh 6.36: Mch chuyn mch y ko
Chng 6. n p ngun
145

( )
( )
( )
,
,
,
21
1
11
22
2
11
23
3
11
2
1 0 7
2
1 0 7
2
1 0 7
m
r v
m
r v
m
r v
t W
U U
W T
t W
U U
W T
t W
U U
W T
(
=
(

(
=
(

(
=
(

(6.20)
+ Trong mch y kp, cc cun dy s cp v th cp c 2 dng in bng nhau v
ngc chiu chy trong mi na cun trong 1 chu k, nn trong 1 chu k khng c thnh
phn mt chiu trong bin p, nn vng t tr ca li bin p khng i vo vng bo ha, n
lp li ging nhau sau mi chu k tt, m.
+ in p t trn transistor chuyn mch khi tt.
Do 2 na cun s cp bin p ni tip nhau, cng chiu cun (nhn t cc u c chm
ca bin p trn s ) nn khi 1 trong 2 transistor m, cc C ca transistor i din
(transistor tt) s chu 1 in p t nht bng 2 ln in p Uv ln nht cng vi bin xung
nhn do in cm r ca bin p v dy dn, ging nh trng fhp ca transistor chuyn
mch mch n bin i thun hnh 6.34 v 6.35. in p ln nht t ln cc C ca
transistor chuyn mch trong mch y ko, khi tt l:
( )
max max
, . 1 3 2
c v
U U = (6.21)
gim nh cc xung nhn in cm r, t gim tn hao chuyn mch cho
transistor, ta c th ni gia cc C ca cc transistor vi im "t" mt mch ph gm t
in, in tr, it (RCD) - c gi l "SNUBBER" nh hnh 6.37.

Hnh 6.37: Cc in cm r gy ra cc xung nhn
v mch Snubber gim xung nhn
Mch y ko thng c s dng trong b ngun chuyn mch c cng sut di
1000W v in p mt chiu vo thp hn 200Vdc.
5) Mch chuyn mch bin i thun kp
Snubber Snubber
(gm C,D,R)
Uv
Cc in cm r
Chng 6. n p ngun
146
Mch chuyn mch bin i thun kp l mch i xng c 2 na ging nhau, mi
na gm 2 transistor mc ni tip vi nh v y ca cun s cp ca 1 bin p, mi na
hot ng vi 1 bn chu k ca in p iu khin c trnh by mch hnh 6.38.

C 2 transistor T
1
, T
2
u m cng mt lc khi xung iu khin mc cao v tt cng 1
lc khi xung iu khin mc thp. Khi chng m, tt c cc u c chm ca cc cun s cp
v th cp c in p dng v cng sut c chuyn n ti. Khi chng tt sc in ng t
cm xut hin lm phn cc ngc cc cun dy. im c chm ca W
11
t n in th m
nhng c gi in th t bi it ghim D
1
. im khng chm ca W
11
(im di) t
in th dng nhng c gi in th ca Uv bi it ghim D
2
, do cc E ca T
1
khng
bao gi cao hn Uv v cc C ca T
2
khng bao gi cao hn Uv. Xung in cm r c ghim
in p t ln 1 trong 2 transistor khi chng tt khng bao gi cao hn in p vo ln
nht.
Mt u im ng k ca mch na l tt c nng lng c tch tr trong in cm r
khng mt do tn hao thnh phn thun tr hay transistor cng sut m c np tr li v
ngun Uv qua D
1
v D
2
khi 2 transistor tt, v cc cun dy bin p ch lm vic 1 ln trong 1
chu k xung iu khin nen cc mch chnh lu th cp phi c cc it ghim (D
5
, D
6
)
m bo dng lin tc qua ti khi 2 transistor tt.
Trong cun s cp W
11
c dng mt chiu qua, nhng in p phn cc ngc trn W
11

lc transistor tt bng in p phn cc thun khi cc transistor m, do li bin p lun
lun ti lp (reset) v v tr ban u tt nu thi gian m cc i khng ln hn 80% ca na
chu k.
D
4
W
21

W
21

D
3
L
1
C
1
D
5
+

Ur
1
L
2
C
2
D
6
+

Ur
2
W
11

D
1
D
2
T
2
T
1
+Uv

Tr

Hnh 6.38: Mch bin i thun kp.
Chng 6. n p ngun
147

Mch bin i thun kp y gm 2 v i xng nhau nh hnh 6.39, thng hay
c dng trong cc b ngun n p chuyn mch cng sut ln, cung cp cho cc h thng
chuyn mch (tng i) dung lng ln.
B ngun lm vic vi in p AC 1 pha (220Vac 310Vac), s dng cc chuyn mch
cng sut l cc MOSFET cng sut, cho in p v dng in ra mt chiu danh nh
50Vdc-25A; 50Vdc-50A.
Mch hnh 6.39 i hi khi iu khin cho ra 2 chui xung iu khin c rng thay
i, ngc pha nhau iu khin 2 v; ng thi cc xung iu khin cc MOSFET phi
cch ly vi nhau (thng dng 2 bin p xung, mi bin p c 2 cun th cch ly nhau). Mch
hnh 6.39 c 2 mch chnh lu th cp chung 1 b lc LC, nn tr s cc linh kin lc LC
c gim nh.
B ngun n p chuyn mch cng sut ln, c cc phn t chuyn mch chnh ni theo
kiu bin i thun kp, c in p xoay chiu u vo 3 pha 380V, thng c cu hnh
mch bin i thun kp 2 v mc ni tip nh hnh 6.40. Kiu ni mch ny th in p
trn mi t lc C
1
, C
2
ch bng mt na in p vo Uv, in p tch trn mi t lc l ngun
in p cp cho mt v ca mch, v mi MOSFET ch chu in p bng na Uv khi n tt.
G
2

S
2
Uv
+
G
1

S
1
D
1

D
5

D
7

L
C
Tr1
Ur
FET
1

FET
2

D
2

FET
3

D
3

D
6

D
8

Tr2
D
4

FET
4

G
3

S
3
G
4

S
4
Hnh 6.39: Mch bin i thun kp y
Chng 6. n p ngun
148

Cu hnh mch 6.40 thng cho ra in p, dng in mt chiu danh nh 50Vdc-
100A.
nhn c dng ra ln hn na, ngi ta dng nhiu mch nh hnh 6.40 ni song
song cc u vo xoay chiu v song song cc u ra mt chiu.
6) Mch chuyn mch cu bn phn

Hai transistor m lch nhau 180
o
. Khi mt trong 2 transistor m, transistor tt ch chu
mt in p Uv ln nht m khng gp i. Cc it ghim D
1
, D
2
ni gia cc cc C, E cc
transistor chuyn mch gi cho in p trn transistor khi tt khng vt qu Uv, v hi
tip nng lng tch tr trn bin p v ngun vo khi transistor tt m khng tn hao trn
+
+Uv

D
5

D
7

L
1
C
3
Tr1
D
6

D
8

Tr2
T
4

T
3

D
3
D
4

D
1
D
2
T
2

T
1

C
1

C
2

550V
Hnh 6.40: Hai v ca mch bin i thun kp
mc ni tip khi u vo c in p cao.
Ur
+ Uv
C
1
C
2
T
1
T
2
D
1
D
2
D
3
D
4
C
3
L
1
+

Ur

Hnh 6.41: Mch chuyn mch cu bn phn
Chng 6. n p ngun
149
transistor hay in tr ca bin p. Khi T
1
tt, u di ca s cp bin p c in p dng,
dng np cho C
2
xut pht t u di cun s cp qua C
2
, D
2
v u trn (u c chm). Khi
T
2
tt, T
1
cha thng, u c chm ca s cp l dng, dng np cho t C
1
t u c chm,
qua D
1
, C
1
v u khng chm ca s cp bin p.
Trong bin p khng c thnh phn mt chiu v trong cc cun dy c 2 dng bng
nhau v ngc chiu trong 1 chu k, do tn hao trong bin p l rt nh.
Mch chuyn mch cu bn phn c th cho cng sut mt chiu ra ti 1000W, s dng
cc transistor cng sut lng cc hay transistor MOSFET.
7) Mch chuyn mch kiu cu ton phn

Cc transistor T
1
, T
2
m tt ng pha, cc transistor T
3
, T
4
m tt ng pha nhng lch
vi T
1
, T
2
gc 180
o
, vi mch cu ton phn, cc transistor ch chu 1 in p ln nht bng
in p Uv ln nht. Cc it ghim D
1
D
4
, ghim mc in p t ln cc transistor khi tt
khng vt qu Uv, v hi tip nng lng d tr trn bin p v ngun vo khi transistor tt.
Trng thi cng tc ca bin p ging nh mch cu bn phn. Vi cng in p Uv v cc
transistor hot ng vi cng 1 dng nh th mch cu ton phn c th cung cp cng sut
mt chiu u ra gp 2 ln so vi mch cu bn phn, nhng s vng dy s cp bin p phi
gp 2 ln so vi mch cu bn phn.
Cun s cp bin p lm vic 2 ln trong 1 chu k xung iu khin nn cc mch chnh
lu bn th cp l chnh lu ton sng, dng mch chnh lu vi cun th cp c im gia
c th to ra cc ngun in p n nh i xng.

CU HI N TP
1. Phn tch nguyn l hot ng ca mch hnh 6-1 v tnh in p ra U
r
.

+ Uv
D
1

D
3

D
2

D
4

T
4

T
1
T
3

T
2

D
4

D
5

D
6

D
8

D
9

D
7

L
2

L
1

L
3

Ur
1

+Ur
2

- Ur
2

Hnh 6.42: Mch chuyn mch cu ton phn.
Uv
Ur
T
3
T
ZD
1
R
1
R
2
T
1
+

+

Hnh 6.43
Chng 6. n p ngun
150

2. Phn tch nguyn l hot ng ca mch hnh 6.44 v tnh in p ra U
r
.

3. Cho mch in hnh 5.45.
Tnh U
ra
khi V
R1
cc
im trn, gia, di.
Tnh U
ra
khi Z
D1
b ngn
mch v h mch tng ng vi
VR
1
3 v tr.

Tnh U
ra
khi V
R1
cc
im trn, gia, di.
Tnh U
ra
khi Z
D1
b ngn
mch v h mch tng ng vi 3 v
tr ca V
R1
.
Tnh hiu sut ca mch
ng vi V
R
1 im trn.

Tnh U
ra
khi con chy ca V
R1

cc im trn, gia, di v hiu sut ca
mch ng vi cc v tr ca V
R1
.

Uv
Ur
T
3
T
2
ZD
1
R
1
R
2
T
1
+

+

Hnh 6.44
R
3
ZD
2
UZ
2
=
+

Uv = 25V
R
1

ZD
1

UZD
1
= 3,3V
+V
T
1
T
2
R
2

10kO
VR
1

05kO
R
3

10kO
Rt
+
Ura

Hnh 6.46
Uv = 28V
T
1

R
2

R
3

10kO
Rt
R
5

8kO
VR
1

05kO
T
2

ZD
1

UZD
1
= 10V
Ura
+
Hnh 6.45
R
1

LM238
1,2 32V
U
v
= 35V
+
3
1
2
U
ra
R
1

100O
VR
1

0 2,5kO
Hnh 6.47
Chng 6. n p ngun
151
6. Cho mch in nh hnh 6.48.
Cho bit U
ZD1
= 12V, dng I
ZD1min
= 1,5mA.
Tnh gi tr R
1
thp nht v U
r
ngng mch bo v (mch trong vng trn) bt u hot ng.
Bit SCR dn khi U
GK
= 1,5V v I
GK
= 1mA.

7. Cho mch in hnh 5-49.
U
Z
= 6,3V, R
1
= 5kO
R
2
= 2kO, V
R
= 2,5kO.
E = 20V.
I
t.max
= 250mA, I
ZDmin
= 2mA.
Tnh U
r min
, U
r max
?
Tnh cng sut tiu tn
ln nht trn T
1
.
- Mun thay i ngun +E thnh ngun E (chn 4 ca s ni n E) th phi thay i
nhng g mch lm vic bnh thng? V li mch.
8. Cho mch in hnh 6.50, bit:
E = +30V, U
ZD
= 6,6V; R
1
= 2kO; R
2
= 2,5kO
V
R
= 2kO, |
1
= 100.
Dng ra ca IC l 10mA.
Tnh gi tr nh nht ca Rt v gi tr ln nht ca R
E
mch hot ng bnh thng? (mch
hot ng bnh thng l I
rmax
s |
1
I
B1
, mch gii hn dng cha lm vic).

~
~
Uv
+ T
1
Rt

SCR

ZD
1
R
1
UR
Hnh 6.48
+

R
3

R
4

R
1

R
2
R
E

Rt
VR
T
2

T
1

ZD
Ur
+E
Hnh 6.50
+

D
Z
D

R
1

R
2
VR
R
3
R
t

T
1

U
r

(4)
(7)
+E
Hnh 6.49
Chng 6. n p ngun
152

9. Cho mch in hnh 6.51, bit:
I
t
= 1,5A, I
1C
= 1A, | = 100
Tnh gi tr R
1
v I
T1
?

10. Cho mch in hnh 6.52 l s n p
m U
r
iu khin c tng nc nh tn hiu s
tc ng ti cc li vo X
0
, X
1
, X
2
. Bit LM317 c
U
rmin
= 1,2V.
E = +35V, R
1
= R
2
= R
4
= R
0
= 3kO
Khi transistor bo ha th coi nh r
CE
= 0.
Tnh U
r
trong cc trng hp:
+ X
0
= X
1
= X
2
= 0.
+ Mt trong 3 li vo bng 1.
+ Hai trong 3 li vo bng 1.
+ C 3 li vo bng 1.

11. Phn tch nguyn l hot ng ca mch hnh 6.53.

Cho bit Ur ln hn hay nh hn Uv?
Mun iu chnh c in p ra th lm th no?
Tnh Ur, bit Uv = 10V v UB
1
c dng nh sau.

iu
khin
RX
Uv R
1

ZD
T
1

D
1

C
1

R
2

R
3

Ur
L
1

Hnh 6.53
2 1,5
78XX
Uv
+ T
1

R
1

1
2
3
IT
1

Ur
IIC
It
Hnh 6.51
IN OUT
ADJ E
+35V
X
2
X
1
X
0

T
2
T
1
T
0

1
3 2
R
3

500
R
2

3kO
R
1

3kO
R
0

3kO
Ur

Hnh 6.52
R
4

3kO
Chng 6. n p ngun
153

12. Phn tch nguyn l hot ng ca mch hnh 6.54.

UB
1
c dng:

- nh du cc ca Ur v tnh gi tr Ur?
13. Cho mch in nh hnh 6.55.

- Mun c Ur > Uv th lm th no?
- Mun o cc Ur th ni mch nh th no?
14. Cho mch bo v ct in p cao ca b ngun chuyn mch hnh 6.56, hy phn
tch mch.

iu
khin
RX
Uv
15V
Ur

D
1

T
1

L
1

C
1

Hnh 6.54
3
1
iu
khin
RX
Uv

Ur

D
1

T
1

L
1

C
1

Tr
1

Hnh 6.55
Chuyn
mch chnh
+

+
+

Tr
1

D
1

D
2
C
1

L
1

+

D
3

D
3

OC
ZD
1

Uht
Uch
Khuch i
sai lch
iu ch
rng xung
SCR
Hnh 6.56
Chng 6. n p ngun
154

15. S hnh 6.57, trong c mt b ngun chuyn mch kiu dao ng t kch to
ra mc ngun mt chiu ph U
01
, U
02
cung cp cho ngun chuyn mch to ra ngun mt
chiu chnh lm vic vi in p 300VDC. Hy phn tch nguyn l hot ng ca s ?

D
5

C
4

W
3
U
01

D
6

C
5

W
4

U
02

300VDC
Tr
1

D
3

R
1

R
2

R
3

T
1

D
4

C
3

W
2

C
2

C
1

D
1

D
2

Lc
nhiu
110VAC
Hnh 6.57
Chng 7. Cc ng dng ca cc b bin i cng sut
155
CHNG 7: CC NG DNG CA CC B BIN I
CNG SUT

7.1. TRUYN TI IN MT CHIU (HVDC)
7.1.1. Gii thiu
H thng truyn ti in mt chiu in p cao (HVDC - High Voltage Direct
Current) l mt phng php truyn ti in nng vi cng sut ln vi khong cch xa. K
thut truyn ti mt chiu ny bt u c pht trin mnh t thp nin ba mi th k trc.
Trc thp nin 70 cc van h quang thy ngn c s dng rng ri trong vic
thit k cc h thng truyn ti mt chiu, sau cc h thng truyn ti mt chiu ch cn
s dng cc thit b bn dn trng thi rn (Solid State Semiconductor Device).
Cng vi s pht trin ca cc van in t cng sut c iu khin (Thiristor, GTO,
IGBT) khin cho cng ngh truyn ti in mt chiu tr nn c tnh kh thi cao. n
nay trn th gii nhiu nc v ang p dng h thng truyn ti in mt chiu.
7.2.2. Nguyn l ca h thng HVDC

Hnh 7.1: S nguyn l ca h thng HVDC
Qu trnh truyn ti in nng gia trm truyn (Trm Rectifier) ti trm n (Trm
inverter) l qu trnh truyn ti in nng gia hai trm bin i. Ti trm bin i ny in
p xoay chiu c cho qua trm bin p cung cp mt in p xoay chiu thch hp
cung cp cho b bin i. B bin i bin i in xoay chiu thnh mt chiu v c
truyn trn ng dy mt chiu n trm bin i kia.
in p v dng mt chiu c lm phng bng cun san dng v kh sng hi bng
b lc mt chiu trn ng dy mt chiu. Ti trm bin i dng in v in p mt chiu
t ng dy ti in qua b bin i chuyn thnh dng v in p xoay chiu. in p xoay
chiu ny c cho qua trm bin p bin i thnh in p xoay chiu mong mun.
Trong qu trnh truyn ti in nng gia hai trm ni trn vai tr ca cc mch
bin i ti hai trm c th thay i cho nhau dn n s o chiu ca lung cng sut. Ti
cc trm bin i, cng sut phn khng c cung cp bi cc ngun phn khng.
7.1.3. Cu to ca h thng HVDC
Mt h thng truyn ti HVDC cu to nh hnh 7.2, bao gm cc thit b chnh sau:
- Trm bin p (Transformer)
156
- B lc xoay chiu (AC Filters )
- B bin i ( Converter )
- B lc mt chiu (DC Filters)
- Cun san dng (Smoothing reactors)
- ng dy truyn ti mt chiu (DC line)
- Ngun phn khng (Reactive power source)
- H thng ni t v ng tr li
- H thng bo v v iu khin (protection & control system)

Hnh 7.2: Cu trc ca mt h thng HVDC
7.1.4. u nhc im v ng dng
7.1.4.1. u im
Di y l mt s li ch chnh ca phng php truyn ti HVDC so vi truyn ti
in xoay chiu truyn thng:
- C th truyn ti cng sut trn mt khong cch ln m khng b gim kh nng ti
nh ng dy xoay chiu (cng sut truyn ti gii hn ca ng dy xoay chiu
l hm ca khong cch truyn ti v gim mnh khi khong cch truyn ti tng
ln).
- iu khin dng nng lng rt nhanh, do nng cao n nh, khng ch i
vi cc lin kt HVDC m cn i vi h thng xoay chiu bao quanh.
- Hng ca dng nng lng c th thay i trong thi gian ngn
- Vic ni lin kt cc h thng in bng ng dy ti in mt chiu s lm hn
ch cng sut ngn mch trong h thng in lin kt.
157
- H thng HVDC c th truyn ti cng sut ln hn i vi cng mt c dy so vi
h thng xoay chiu.
- Cng mt cng sut truyn ti th cp in p ca ng dy HVDC thp hn
ng dy AC do yu cu cch in cng n gin hn.
- Hnh lang tuyn ca ng dy truyn ti in mt chiu nh hn nhiu so vi
truyn ti in xoay chiu vi cng cng sut truyn ti. Tc ng mi trng
ca truyn ti in mt chiu cng t hn.
- Vi b bin i s dng GTO (Gate turn off thyristor) hoc IGBT (Insulated
Gate Bipolar Transistor) cho php iu khin dng cng sut tc dng v phn
khng c lp.
- Cho php truyn ti in nng gia hai h thng xoay chiu c tn s khc nhau
(lin kt qua li gia hai h thng xoay chiu khc tn s).
- Hin nay cng ngh truyn ti in mt chiu kh ph bin trn th gii v c tin
cy cao, c nghin cu v vn hnh trn 30 nm.
7.1.4.2. Nhc im
- Gi thnh ca b bin i cn cao
- B bin i c kh nng chi qu ti khng cao v rt nhy cm vi nhit v
m khng kh.
- Phi lp t thm cc thit b b cng sut phn khng ti cc trm bin i.
- Pht x sng hi v vy cn thc hin cc bin php trit tiu sng hi do hot ng
ca b bin i sinh ra thnh phn sng hi bc cao lm mo dng dng xoay chiu
- Khng c kh nng s dng my bin p iu chnh in p.
- Rt phc tp v tn km khi ly cng sut dc ng dy
- Rt phc tp trong iu khin
- Trong cng nghip h thng HVDC t ra cnh tranh hn HVAC nu nh
khong cch truyn ti l: 400km 700 km (vi ng dy trn khng) v
trong khong 50 km (nu l cp ngn di t hay di bin)
7.1.4.3. ng dng
- Truyn ti cng sut qua mt khong cch ln trn t lin v di nc.
- Lin kt hai h thng xoay chiu khc tn s.
- Kt ni cc my pht in bng sc gi, nh my thy in vo h thng.
- Nng cao n nh ca h thng.
i vi cc ng dng nu trn h thng HVDC t ra l s la chn kinh t v gim
nhiu cc tc hi xu ti mi trng . Cng vi s pht trin ca k thut, nhu cu lin kt
cc li in khu vc, cc n lc bo v mi trng khin cho trong nhiu trng hp
h thng truyn ti HVDC l s la chn s 1.
158
7.2. B KHI NG MM
gii thiu trong phn b nghch lu. Vic tm hiu v b khi ng mm ng dng
cho tng thit b nh ng c khng ng b, rotor lng sc, ng c xoay chiu ba pha s
giao cho sinh vin tm hiu di dng bi tp ln.
7.4. B BIN TN CNG NGHIP
Bin tn cng nghip c ng dng rng ri trong cc nh my, x nghip, cc dy
chuyn sn xut t ng ha. C rt nhiu hng sn xut bin tn cng nghip nh
Siemens,
V mt tn s hot ng bin tn cng nghip c tn s u vo ph hp vi tn s li
in, tn s u ra trong khong 0 n 650Hz.
Phn loi theo chc nng ta c:
- Bin tn u vo mt pha ra mt pha
- Bin tn u vo mt pha ra ba pha
- Bin tn u vo ba pha ra mt pha
- Bin tn u vo ba pha ra ba pha
Cu to c bn ca cc loi bin tn ny nh sau:
a) Bin tn u vo mt pha ra mt pha

b) Bin tn u vo mt pha ra ba pha

159
c) Bin tn u vo ba pha ra mt pha

d) Bin tn u vo ba pha ra ba pha

7.5. NGUN LIN TC (UPS)
7.5.1. Gii thiu chung v UPS

a) Cung cp nng lng in cho nhng ti nhy cm
S c ngun nng lng in
S c trong cc ngun nng lng in c th xy ra trong qu trnh lp t trang thit
b hoc u vo h thng (qu ti, nhiu, mt cn bng pha, sm st, ). Nhng s c ny
c th gy ra nhng hu qu khc nhau.
V mt l thuyt: H thng phn phi nng lng in to ra mt in p hnh sin vi
bin v tn s thch hp cung cp cho thit b in (400V-50Hz chng hn).
160
Trong thc t, nhng sng hnh sin in p v dng in cng tn s b nh hng trong
phm vi khc nhau bi nhng s c c th xut hin trong h thng.
i vi h thng cung cp in: C th b s c hoc gin on cung cp in v:
+ Hin tng nhim in bu kh quyn (thng khng trnh khi). iu ny c
th nh hng n ng dy ngoi tri hoc cp chn, chng hn:
o Sm st lm in p tng t ngt trong h thng cung cp in.
o Sng gi c th lm cho ng dy b t
+ Nhng hin tng ngu nhin, chng hn:
o Cnh cy ri gy gn mch hoc t dy
o t cp do o t
o S h hng trong h thng cung cp
Nhng thit b dng in c th nh hng n h thng cung cp
+ Lp t cng nghip, chng hn:
o ng c gy ra in p ri v nhim RF trong qu trnh khi ng.
o Nhng thit b gy nhim: l luyn kim, my hn, gy ra in p ri v
nhim RF
+ Nhng h thng in t cng sut cao.
+ Thang my, n hunh quang
Nhng s c nh hng n vic cung cp nng lng in cho thit b c th phn
thnh cc loi sau: Lch in p, Ngng hot ng, Tng t ngt in p, Thay i tn s,
Xut hin sng hi, Nhiu tn s cao.
S c c th gy ra nhng hu qu nghim trng, c bit l lm gin on vic cung
cp in, nht l h thng d liu ca my tnh.
b) Gii php dng UPS
iu cn ch trc ht ca nhng s c v hu qu ca n v phng din:
An ton cho con ngi
An ton cho thit b, nh xng
Mc tiu vn hnh kinh t
T phi tm cch loi chng ra. C nhiu gii php k thut khc nhau cho vn
ny, nhng gii php ny c so snh trn c s ca hai tiu chun sau nh gi:
Lin tc cung cp in
Cht lng cung cp in
c) Nhng chc nng ca UPS
161
Hot ng nh mt giao din gia h thng cung cp in v nhng ti nhy cm. UPS
cung cp cho ti mt nng lng in lin tc, cht lng cao, khng ph thuc mi tnh
trng ca h thng cung cp.
UPS to ra mt in p cung cp tin cy:
+ Khng b nh hng ca nhng s c ca h thng cung cp, c bit khi h
thng cung cp ngng hot ng.
+ Phm vi sai s cho php tu theo yu cu ca nhng thit b in t nhy cm
(chng hn: GALAXY-sai s cho php ca bin 0,5%, tn s 1%)
UPS c th cung cp in p tin cy, c lp v lin tc thng qua cc khu trung gian:
Acquy v chuyn mch tnh.
7.5.2. ng dng ca UPS trong thc t
Hin nay nhu cu ng dng UPS trong cc lnh vc tin hc, vin thng, ngn hng l rt
ln. S lng UPS c s dng gn bng 1/3 s lng my tnh ang c s dng. C th
ly mt vi v d v cc thit b s dng UPS, l nhng my tnh, vic truyn d liu v
ton b thit b mt trng thi no l rt quan trng v khng cho php c mt in.
UPS c s dng trong ngnh hng khng m bo s thp sng lin tc ca ng bng
sn bay Ni tm li UPS l mt ngun in d phng n c mt mi ch mi ni, nhng
ni i hi cao v yu cu cp in lin tc.

162
TI LIU THAM KHO
[1]. V Minh Chnh, in t cng sut, NXB Khoa hc v K thut H Ni, 2007.
[2]. Nguyn Xun He, Bi ging Ngun in, Hc vin CNBCVT, 2000.
[3]. Nguyn Bnh, in t cng sut, 2002.
[4]. Danial W. Hart, Introduction to power electronics, Prentice Hall, 1997

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