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  • Silicon PNP Power Transistors: BD250/A/B/C

    Загружено:

    Elton De Souza Coura
    70 просмотров3 страницы
    This document provides the product specification for SavantIC Semiconductor's silicon PNP power transistors, models BD250/A/B/C. The transistors come in a TO-3PN package and are designed to be a complement to their BD249/A/B/C transistors. Key specifications include a continuous collector current rating of 25A and a maximum power dissipation of 125W at a case temperature of 25°C. Tables provide the transistors' absolute maximum ratings, thermal characteristics, electrical characteristics including saturation voltages, current gains, and switching times.

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    datasheet_BD250c

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    This document provides the product specification for SavantIC Semiconductor's silicon PNP power transistors, models BD250/A/B/C. The transistors come in a TO-3PN package and are designed to be a complement to their BD249/A/B/C transistors. Key specifications include a continuous collector current rating of 25A and a maximum power dissipation of 125W at a case temperature of 25°C. Tables provide the transistors' absolute maximum ratings, thermal characteristics, electrical characteristics including saturation voltages, current gains, and switching times.

    Авторское право:

    Attribution Non-Commercial (BY-NC)
    Скачайте в формате PDF, TXT или читайте онлайн в Scribd
    Отметить как неприемлемый контент
    70 просмотров3 страницы

    Silicon PNP Power Transistors: BD250/A/B/C

    Загружено:

    Elton De Souza Coura
    This document provides the product specification for SavantIC Semiconductor's silicon PNP power transistors, models BD250/A/B/C. The transistors come in a TO-3PN package and are designed to be a complement to their BD249/A/B/C transistors. Key specifications include a continuous collector current rating of 25A and a maximum power dissipation of 125W at a case temperature of 25°C. Tables provide the transistors' absolute maximum ratings, thermal characteristics, electrical characteristics including saturation voltages, current gains, and switching times.

    Авторское право:

    Attribution Non-Commercial (BY-NC)
    Скачайте в формате PDF, TXT или читайте онлайн в Scribd
    Отметить как неприемлемый контент
    из 3

    SavantIC Semiconductor

    Product Specification

    Silicon PNP Power Transistors

    BD250/A/B/C

    DESCRIPTION With TO-3PN package Complement to type BD249/A/B/C 125 W at 25C case temperature 25 A continuous collector current
    PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION

    Absolute maximum ratings(Ta= )


    SYMBOL PARAMETER BD246 VCBO Collector-base voltage BD246A BD246B BD246C BD246 VCEO Collector-emitter voltage BD246A BD246B BD246C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Collector emitter CONDITIONS VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -25 -40 -5 125 -65~150 -65~150 V A A A W V V UNIT

    THERMAL CHARACTERISTICS
    SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1 UNIT /W

    SavantIC Semiconductor

    Product Specification

    Silicon PNP Power Transistors

    BD250/A/B/C

    CHARACTERISTICS
    Tj=25 unless otherwise specified PARAMETER BD250 Collector-emitter breakdown voltage BD250A IC=-30mA ;IB=0 BD250B BD250C VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off current BD250/250A BD250B/250C IC=-15A ;IB=-1.5A IC=-25A ;IB=-5A IC=-15A ; VCE=-4V IC=-25A ; VCE=-4V VCE=-30V IB=0 -1.0 VCE=-60V IB=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-4V IC=-15A ; VCE=-4V IC=-25A ; VCE=-4V 25 10 5 -1.0 mA mA -80 -100 -1.8 -4.0 -1.6 -3.0 V V V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT SYMBOL

    V(BR)CEO

    ICEO

    IEBO hFE-1 hFE-2 hFE-3

    Emitter cut-off current DC current gain DC current gain DC current gain

    Switching times ton toff Turn-on time Turn-off time IC=-5A; IB1=-IB2=-0.5A RL=5A 0.2 0.4 s s

    SavantIC Semiconductor

    Product Specification

    Silicon PNP Power Transistors


    PACKAGE OUTLINE

    BD250/A/B/C

    Fig.2 outline dimensions (unindicated tolerance:0.1mm)

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