16.10.

2011

Circuit Analysis and Design

Donald A. Neamen Chapter 3 The Field Effect Transistor

Microelectronics

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-1

In this chapter, we will:

Study and understand the operation and characteristics of the various types of MOSFETs. Understand and become familiar with the dc analysis and design techniques of MOSFET circuits. Examine three applications of MOSFET circuits. Investigate current source biasing of MOSFET circuits, such as those used in integrated circuits. Analyze the dc biasing of multistage or multitransistor circuits. circuits Understand the operation and characteristics of the junction field-effect transistor, and analyze the dc response of JFET circuits.
Neamen Microelectronics, 4e McGraw-Hill Chapter 3-2

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Basic Structure of MOS Capacitor

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-3

MOS Capacitor Under Bias: Electric Field and Charge

Parallel l P ll l plate capacitor i

g Negative g bias: gate

Holes attracted to gate

Positive g bias: gate

Electrons attracted to gate

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-4

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Schematic of n-Channel Enhancement Mode MOSFET

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-5

Basic Transistor Operation

Before electron inversion layer is formed

Neamen Microelectronics, 4e McGraw-Hill

After electron inversion layer is formed

Chapter 3-6

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Basic Transistor Operation

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-7

Current Versus Voltage Characteristics: Enhancement-Mode nMOSFET

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-8

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Family of iD Versus vDS Curves: Enhancement-Mode nMOSFET

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-9

p-Channel Enhancement-Mode MOSFET

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-10

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Symbols for n-Channel Enhancement-Mode MOSFET

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-11

Symbols for p-Channel Enhancement-Mode MOSFET

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-12

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n-Channel Depletion-Mode MOSFET

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-13

Family of iD Versus vDS Curves: Depletion-Mode nMOSFET

Symbols
Neamen Microelectronics, 4e McGraw-Hill Chapter 3-14

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p-Channel DepletionMode MOSFET

Symbols
Neamen Microelectronics, 4e McGraw-Hill Chapter 3-15

Cross-Section of nMOSFET and pMOSFET

Both transistors are used in the fabrication of CMOS circuitry.

Neamen Microelectronics, 4e McGraw-Hill Chapter 3-16

16.10.2011

Summary of I-V Relationships

Region NMOS PMOS vSD<vSD(sat)
Nonsaturation vDS<vDS(sat)

2 2 iD Kn[2(vGS VTN)vDS vDS] iD Kp[2(vSG VTP)vSD vSD]

Saturation

vDS>vDS(sat)

vSD>vSD(sat)
2

i D K n [vGS VTN ]
Transition Pt. Enhancement Mode Depletion Mode Neamen

iD K p [vSG VTP ]2
vSD(sat) = vSG + VTN VTP < 0V VTP > 0V

vDS(sat) = vGS - VTN VTN > 0V VTN < 0V

Microelectronics, 4e McGraw-Hill

Chapter 3-17

Conduction Parameters
NMOSFET

Kn

W nCox ' W kn L L W p Cox L

' kp

PMOSFET
where: h

Kp

W L

Cox o tox

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-18

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Channel Length Modulation: Early Voltage

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-19

Body Effect

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Microelectronics, 4e McGraw-Hill

Chapter 3-20

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Subthreshold Condition

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Microelectronics, 4e McGraw-Hill

Chapter 3-21

NMOS Common-Source Circuit

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Microelectronics, 4e McGraw-Hill

Chapter 3-22

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PMOS Common-Source Circuit

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Microelectronics, 4e McGraw-Hill

Chapter 3-23

Load Line and Modes of Operation: NMOS Common-Source Circuit

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Microelectronics, 4e McGraw-Hill

Chapter 3-24

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Problem-Solving Technique: NMOSFET DC Analysis

1. 1 Assume the transistor is in saturation saturation. a. VGS > VTN, ID > 0, & VDS VDS(sat) 2. Analyze circuit using saturation I-V relations. 3. Evaluate resulting bias condition of transistor. a. If VGS < VTN, transistor is likely in cutoff b. If VDS < VDS(sat), transistor is likely in ( ), y nonsaturation region 4. If initial assumption is proven incorrect, make new assumption and repeat Steps 2 and 3.
Neamen Microelectronics, 4e McGraw-Hill Chapter 3-25

Enhancement Load Device

Kn = 1mA/V2 VTN = 1V

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-26

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Circuit with Enhancement Load Device and NMOS Driver

ML is always in saturation.

MD can be biased either in saturation or nonsaturation region.

Neamen Microelectronics, 4e McGraw-Hill Chapter 3-27

NMOS Inverter with Enhancement Load Device

vI < VTN vI > VTN

Voltage Transfer Characteristics:

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-28

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NMOS Inverter with Depletion Load Device

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Microelectronics, 4e McGraw-Hill

Chapter 3-29

CMOS Inverter

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Microelectronics, 4e McGraw-Hill

Chapter 3-30

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2-Input NMOS NOR Logic Gate

V1 (V) 0 5 0 5
Neamen Microelectronics, 4e McGraw-Hill

V2 (V) VO (V) 0 0 5 5 High Low Low Low

Chapter 3-31

MOS Small-Signal Amplifier

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Microelectronics, 4e McGraw-Hill

Chapter 3-32

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Current Mirrors

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Microelectronics, 4e McGraw-Hill

Chapter 3-33

2-Stage Cascade Amplifier

Source follower

Common-source
Neamen Microelectronics, 4e McGraw-Hill Chapter 3-34

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NMOS Cascode Circuit

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-35

Cross Section of n-Channel Junction Field Effect Transistor (JFET)

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-36

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Cross Section of n-Channel MESFET

Neamen

Microelectronics, 4e McGraw-Hill

Chapter 3-37

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