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V DSS 50 V 50 V
ID 50 A 27 A
TYPICAL RDS(on) = 0.022 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220
3 1 2
1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ISOWATT220
Value IRFZ40FI 50 50 20 50 35 200 150 1 -65 to 175 175 27 19 200 45 0.3 2000 50 50
Unit V V V A A A W W/ o C V
o o
C C
July 1993
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THERMAL DATA
TO-220 R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 ISOWATT220 3.33
o o o
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%)
o
Unit A mJ mJ A
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = 20 V
T c = 125 oC
ON ( )
Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 A ID = 29 A VG S = 10 V 50 Min. 2 Typ. 2.9 0.022 Max. 4 0.028 Unit V A
DYNAMIC
Symbol gfs ( ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 29 A VG S = 0 Min. 17 Typ. 22 1700 630 200 2200 850 260 Max. Unit S pF pF pF
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD
Symbol t d(on) tr t d(off ) tf Qg Q gs Q gd Parameter Turn-on Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 25 V ID = 29 A R G = 4.7 V GS = 10 V (see test circuit) I D = 64 A V GS = 10 V V DD = Max Rating x 0.8 (see test circuit) Min. Typ. 50 110 60 25 50 15 27 Max. 70 160 90 35 70 Unit ns ns ns ns nC nC nC
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % () Pulse width limited by safe operating area
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Output Characteristics
Transfer Characteristics
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Transconductance
Capacitance Variations
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D1
L2 F1
G1
Dia. F2 F
L5 L7 L6
L9
L4
H2
P011C
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L3 L6 L7 F1 F
G1
F2
1 2 3 L2 L4
P011G
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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