Lecture14 P-N Junctions 4 - Quantitative

ECE 3040 - Dr.
Alan Doolittle Georgia Tech

Lecture 14
P-N Junction Diodes: Part 3
Quantitative Analysis (Math, math and more math)
Reading:
Pierret 6.1
ECE 3040 - Dr. Alan Doolittle Georgia Tech
Quantitative p-n Diode Solution
Assumptions:
1) steady state conditions
2) non- degenerate doping
3) one- dimensional analysis
4) low- level injection
5) no light (G
L
= 0)
Current equations:
J=J
p
(x)+J
n
(x)
J
n
=q
n
nE +qD
n
(dn/dx)
J
p
= q
p
pE - qD
p
(dp/dx)
V
A
Quasi-Neutral Regions
Depletion Region
p-type n-type
p-type n-type
Depletion Region
-x
p
x
n

0
) ( ) (
0
) ( ) ( ) (
2
2
2
2
+

=
+

p
n n
P
L
p
n n
P
n
p
x
p
D
G
p
x
p
D
t
p
n
p p
N
L
n
p p
N
p
n
x
n
D
G
n
x
n
D
t
n
) ( ) (
0
) ( ) ( ) (
2
2
2
2

=
+

Since electric fields
exist in the depletion
region, the minority
carrier diffusion
equation does not
apply here.
Application of the Minority Carrier Diffusion Equation

0 ) (
:
= x n
Condition Boundary
p
? ) (
:
= =
p p
x x n
Condition Boundary
? ) (
:
= =
n n
x x p
Condition Boundary
0 ) (
:
= x p
Condition Boundary
n
0 E 0 = E 0 = E
p-type n-type
Depletion Region
-x
p
x
n


? ) (
:
= =
p p
x x n
Condition Boundary
? ) (
:
= =
n n
x x p
Condition Boundary
0 E 0 = E 0 = E
( ) ( )
( )
|
.
|
\
|
= = =
|
.
|
\
|
= =
= =
= =
= = = = =
= = =
= =

1 ) ( 1 ) (
) (
) (
) ( ) ( ) (
) ( ) (
2 2
2
2
2
2
kT
qV
D
i
n n n
kT
qV
A
i
p p
o
kT
qV
A
i
p p
kT
qV
A
i
p p
kT
qV
i A p p p p p p
kT
F F
i p p p p
kT
F E
i
kT
E F
i
A A
A
A
A
P N
P i i N
e
N
n
x x p x x at similarly and e
N
n
x x n
n e
N
n
x x n
e
N
n
x x n
e n N x x n x x p x x n
e n x x p x x n
e n p and e n n
p-type n-type
Depletion Region
-x
p
x
n


? ) (
:
= =
p p
x x n
Condition Boundary
? ) (
:
= =
n n
x x p
Condition Boundary
0 E 0 = E 0 = E
( ) ( )
( )
|
.
|
\
|
= = =
|
.
|
\
|
= =
= =
= =
= = = = =
= = =
= =

1 ) ( 1 ) (
) (
) (
) ( ) ( ) (
) ( ) (
2 2
2
2
2
2
kT
qV
D
i
n n n
kT
qV
A
i
p p
o
kT
qV
A
i
p p
kT
qV
A
i
p p
kT
qV
i A p p p p p p
kT
F F
i p p p p
kT
F E
i
kT
E F
i
A A
A
A
A
P N
P i i N
e
N
n
x x p x x at similarly and e
N
n
x x n
n e
N
n
x x n
e
N
n
x x n
e n N x x n x x p x x n
e n x x p x x n
e n p and e n n
p-type n-type
Depletion Region
-x
p
x
n

Application of the Current Continuity Equation
( )
dx
dx
dx
p
n
p o
n
n n n
n d
qD
n n d
qD
dn
D n q J
=
+
=
|
.
|
\
|
+ =
( )
dx
p
dx
dx
n
p
n o
p
p p p
d
qD
p p d
qD
dp
D p q J
=
+
=
|
.
|
\
|
=
0 E 0 = E 0 = E
?
p-type n-type
Depletion Region
-x
p
x
n

No thermal recombination and generation implies J
n
and J
p
are constant throughout the
depletion region. Thus, the total current can be define in terms of only the current at the
depletion region edges.
Application of the Current Continuity Equation: Depletion Region
) ( ) (
n p p n
x J x J J + =
x
J
q
J
q
t
n
t
n
J
q t
n
N
N
etc light as such
processes other All Generation n combinatio N
=
=
+ =
1
0
1
0
1
... ,
Re
0 E 0 = E 0 = E
x
J
q
J
q
t
p
t
p
J
q t
p
P
P
etc light as such
processes other All Generation n combinatio P
=
=
+ =
1
0
1
0
1
... ,
Re
p-type n-type
Depletion Region
x=0

Approach:
Solve minority carrier diffusion equation in quasi-neutral regions
Determine minority carrier currents from continuity equation
Evaluate currents at the depletion region edges
Add these together and multiply by area to determine the total current
through the device.
Use translated axes, x x and -x x in our solution.
0 E 0 = E 0 = E
x=0
p-type n-type
Depletion Region
x=0

0 E 0 = E 0 = E
x=0
p
n n
P
p
x
p
D
) (
'
) (
0
2
2

=
|
.
|
\
|
= = = =
|
.
|
\
|
= =
=
1 ) 0 ' ( 0
1 ) 0 ' (
0 ) ' (
:
2
2
kT
qV
D
i
n
kT
qV
D
i
n
n
A
A
e
N
n
x p A and B
e
N
n
x p
x p
Conditions Boundary
( ) ( )
p p P
L x L x
n
D L where Be Ae x p
P P
+ =
+ / ' / '
) ' (
( )
0 ' 1 ) ' (
/ '
2
|
.
|
\
|
=

x for e e
N
n
x p
P
A
L x
kT
qV
D
i
n
( )
0 ' 1 ) ' (
/ '
2
|
.
|
\
|
=

x for e e
N
n
x p
P
A
L x
kT
qV
D
i
n
p-type n-type
Depletion Region
x=0

0 E 0 = E 0 = E
x=0
( )
0 ' 1 J
d
qD J
/ '
2
p
n
p p
|
.
|
\
|
=
x for e e
N L
n D
q
dx
p
P
A
L x
kT
qV
D p
i p
( )
0 ' ' 1 ) ' ' (
/ ' '
2
|
.
|
\
|
=

x for e e
N
n
x n
n
A
L x
kT
qV
A
i
p
p-type n-type
Depletion Region
x=0

0 E 0 = E 0 = E
x=0
( )
0 ' ' 1 J
d
qD J
/ ' '
2
n
p
n n
|
.
|
\
|
=
x for e e
N L
n D
q
dx
n
n
A
L x
kT
qV
A n
i n
Similarly for electrons on the p-side
p-type n-type
Depletion Region
0 E 0 = E 0 = E
p n
J J J + =
( )
n
L x
n
e J
/ ' '
( )
p
L x
p
e J
/ '
n p
J J J =
p n
J J J =
Total on current is constant throughout the device. Thus, we can
characterize the current flow components as
x=0

x=0
Recombination Recombination
Thus, evaluating the current components at the depletion
region edges, we have
" "
1 I
1 J
0) (x' J 0) (x' J 0) ' (x' J 0) ' (x' J 0) (x' J 0) ' (x' J J
2
2
2
2
p n p n p n
current saturation reverse the is I
N L
n D
N L
n D
qA I where e I
or
x all for e
N L
n D
N L
n D
q
o
D p
i p
A n
i n
o
kT
qV
o
kT
qV
D p
i p
A n
i n
A
A
|
|
.
|
\
|
+ =
|
.
|
\
|
=
|
.
|
\
|

|
|
.
|
\
|
+ =
= + = = = + = = = + = =
Note: Vref from our previous qualitative analysis equation is the thermal voltage, kT/q
Examples: Diode in a circuit
R=1000 ohms
V=9V, 5V,
2V, -9V
V
A
I
pA I where e I
o
kT
qV
o
A
1 1 I =
|
.
|
\
|
=
V
1
=IR
A
0259 . 0
A
0259 . 0
0259 . 0
A
V 1 9 1 9V
V (1000) 1 12 1 9V
1 12 1 I
V I(1000) 9V
+
|
.
|
\
|
=
+
(
|
.
|
\
|
=
|
.
|
\
|
=
+ =
V
V
V
V
V
V
A
A
A
e e
e e
or
e e
-1 pA -9.0V -9V
1.5 mA 0.55V 2V
4.4 mA 0.58V 5V
8.4 mA 0.59V 9V
I V
A
V
Solutions
In forward
bias (V
A
>0)
the V
A
is
~constant
for large
differences
in current
In reverse bias (V
A
<0) the current
is ~constant (=saturation current)

Lecture14 P-N Junctions 4 - Quantitative

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ECE 3040 - Dr.

Alan Doolittle Georgia Tech

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