Physics 3313, Midterm II (1) Determine the shift of the Fermi level with respect to instrinsic Fermi level

position (a) in a p-type Si sample with Na = 2 1014 cm3 ; (b) in an n-type Si sample with Nd = 2 1016 cm3 . Assume T =300 K and instrinsic carrier concentration ni = 1.5 1010 cm3 . (2) In an experiment, one measures conductivity of n-doped Ge as a function of doping concentration Nd . The values of obtained at Nd = 1 1013 cm3 and 5 1013 cm3 are 24 103 1 cm1 and 40 103 1 cm1 , respectively. Assuming ni = 2.4 1013 cm3 , determine the electron and hole mobilities. (3) Assuming that the eective density of states functions in silicon is Nc = 2.8 1019 T 300
3/2

Nv = 1.04 1019

T 300

3/2

and the bandgap energy Eg = 1.12 eV and independent of temperature, calculate the instrinsic carrier concentration (a) at T = 300 K; (b) at T = 600 K. (4) At what doping type and concentration the Fermi level in Ge is positioned exactly in the middle of the bandgap? Assume Nc = 1.04 1019 cm3 , Nv = 6.0 1018 cm3 , and instrinsic carrier concentration ni = 2.4 1013 cm3 . (5) The donor impurity concentration in a semiconductor is given by Nd = exp(x/x0 ) 1016 cm3 , x0 = 1 m, in the range 0 < x < 1 m. Determine induced electric eld (a) at T = 300 K; (b) at T = 450 K. In both cases, assume ni Nd .