PD - 91645A

IRF7389
HEXFET Power MOSFET
l l l l l

Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated

S1 G1 S2 G2

N-CHANNEL MOSFET 1 8

D1 D1 D2 D2

N-Ch VDSS 30V

P-Ch -30V

P-CHANNEL MOSFET

RDS(on) 0.029 0.058

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

Top View

SO-8

Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted)

Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C V DS V GS N-Channel 30 7.3 5.9 30 2.5 2.5 1.6 82 4.0 0.20 3.8 -2.2 -55 to + 150 C 140 -2.8

Maximum P-Channel
-30 20 -5.3 -4.2 -30 -2.5

Units

Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range

IDM IS

W mJ A mJ V/ ns

EAS IAR EAR dv/dt TJ, TSTG

Thermal Resistance Ratings

Maximum Junction-to-Ambient

Parameter

Symbol
RJA

Limit
50

Units
C/W

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1
02/25/04

IRF7389
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 30 -30 1.0 -1.0 Typ. Max. 0.022 0.022 0.023 0.029 0.032 0.046 0.042 0.058 0.076 0.098 14 7.7 1.0 -1.0 25 -25 100 22 33 23 34 2.6 3.9 3.8 5.7 6.4 9.6 5.9 8.9 8.1 12 13 19 8.9 13 13 20 26 39 34 51 17 26 32 48 650 710 320 380 130 180 Units V V/C V S A nA Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, I D = 250A VDS = VGS, I D = -250A VDS = 15V, I D = 5.8A VDS = -15V, I D = -4.9A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, T J = 55C VDS = -24V, V GS = 0V, TJ = 55C VGS = 20V N-Channel I D = 5.8A, VDS = 15V, VGS = 10V P-Channel I D = -4.9A, V DS = -15V, VGS = -10V N-Channel VDD = 15V, ID = 1.0A, RG = 6.0, RD = 15 P-Channel VDD = -15V, ID = -1.0A, RG = 6.0, RD = 15 N-Channel V GS = 0V, V DS = 25V, = 1.0MHz P-Channel V GS = 0V, V DS = -25V, = 1.0MHz

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) V GS(th) gfs I DSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

nC

ns

pF

Source-Drain Ratings and Characteristics

Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 2.5 -2.5 A 30 -30 0.78 1.0 TJ = 25C, IS = 1.7A, VGS = 0V V -0.78 -1.0 TJ = 25C, IS = -1.7A, VGS = 0V 45 68 N-Channel ns 44 66 TJ = 25C, I F =1.7A, di/dt = 100A/s 58 87 P-Channel nC TJ = 25C, I F = -1.7A, di/dt = 100A/s 42 63

Repetitive rating; pulse width limited by

Notes:

Pulse width 300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) Surface mounted on FR-4 board, t 10sec. N-Channel ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C P-Channel I SD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C N-Channel Starting TJ = 25C, L = 10mH RG = 25, IAS = 4.0A. (See Figure 12) P-Channel Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.8A.

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N-Channel
100

IRF7389
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP

I D , Drain-to-Source Current (A)

10

I D, Drain-to-Source Current (A)

VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP

100

10

3.0V

3.0V

1 0.1 1

20s PULSE WIDTH TJ = 25C A

10

1 0.1 1

20s PULSE WIDTH TJ = 150C A

10

V DS , Drain-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

100

I D , Drain-to-Source Current (A)

TJ = 25C TJ = 150C
10

ISD , Reverse Drain Current (A)

TJ = 150C
10

TJ = 25C

1 3.0 3.5 4.0

VDS = 10V 20s PULSE WIDTH

4.5 5.0

1 0.4 0.6 0.8 1.0 1.2

VGS = 0V
1.4

1.6

VGS , Gate-to-Source Voltage (V)

VSD , Source-to-Drain Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Source-Drain Diode Forward Voltage

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IRF7389
2.0

N-Channel
0.040

RDS(on) , Drain-to-Source On Resistance (Normalized)

ID = 5.8A

RDS (on) , Drain-to-Source On Resistance ()

0.036

V GS = 4.5V

1.5

0.032

1.0

0.028

0.5

0.024

V GS = 10V

0.0 -60 -40 -20

VGS = 10V
0 20 40 60 80 100 120 140 160

0.020 0 10 20 30 40

TJ , Junction Temperature ( C)

I D , Drain Current (A)

Fig 5. Normalized On-Resistance Vs. Temperature

Fig 6. Typical On-Resistance Vs. Drain Current

RDS (on) , Drain-to-Source On Resistance ()

E AS , Single Pulse Avalanche Energy (mJ)

0.12

200

TOP
160

0.10

BOTTOM

ID I D 1.8A 3.2A 4.0A

0.08

120

0.06

I D = 5.8A
0.04

80

40

0.02

0.00 0 3 6 9 12 15

0 25 50 75 100 125

A
150

V GS , Gate-to-Source Voltage (V)

Starting T J , Junction Temperature (C)

Fig 7. Typical On-Resistance Vs. Gate Voltage

Fig 8. Maximum Avalanche Energy Vs. Drain Current

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N-Channel
1200

IRF7389
ID = 5.8A VDS = 15V

VGS , Gate-to-Source Voltage (V)

A

V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd

20

16

C, Capacitance (pF)

900

Ciss Coss

12

600

300

Crss

0 1 10 100

0 0 10 20 30 40

VDS , Drain-to-Source Voltage (V)

QG , Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage

100

Thermal Response (Z thJA )

D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100

10

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7389
100
VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP

P-Channel

100

-I D , Drain-to-Source Current (A)

-I D , Drain-to-Source Current (A)

VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP

10

10

-3.0V

-3.0V

1 0.1 1

20s PULSE WIDTH TJ = 25C A

10

1 0.1 1

20s PULSE WIDTH TJ = 150C A

10

-VDS, Drain-to-Source Voltage (V)

-VDS, Drain-to-Source Voltage (V)

Fig 12. Typical Output Characteristics

Fig 13. Typical Output Characteristics

100

100

-I D , Drain-to-Source Current (A)

TJ = 25C TJ = 150C
10

-ISD , Reverse Drain Current (A)

TJ = 150C
10

TJ = 25C

1 3.0 3.5 4.0 4.5

V DS = -10V 20s PULSE WIDTH

5.0 5.5 6.0

1 0.4 0.6 0.8 1.0

VGS = 0V
1.2

1.4

-VGS , Gate-to-Source Voltage (V)

-VSD , Source-to-Drain Voltage (V)

Fig 14. Typical Transfer Characteristics

Fig 15. Typical Source-Drain Diode Forward Voltage

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P-Channel

IRF7389
0.6

2.0

RDS(on) , Drain-to-Source On Resistance (Normalized)

ID = 4.9A

RDS(on) , Drain-to-Source On Resistance ( )

0.5

1.5

0.4

1.0

0.3

0.2

V GS = -4.5V

0.5

0.1

VGS = -10V
0.0 0 10 20 30

0.0 -60 -40 -20

VGS = 10V
0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( C)

-ID , Drain Current (A)

Fig 16. Normalized On-Resistance Vs. Temperature

Fig 17. Typical On-Resistance Vs. Drain Current

RDS(on) , Drain-to-Source On Resistance ( )

0.16

300

EAS , Single Pulse Avalanche Energy (mJ)

250

ID -1.3A -2.2A BOTTOM -2.8A TOP

0.12

200

0.08

I D = -4.9A

150

100

0.04

50

0.00 0 3 6 9 12 15

0 25 50 75 100 125 150

-VGS , Gate -to-Source Voltage (V)

Starting TJ , Junction Temperature ( C)

Fig 18. Typical On-Resistance Vs. Gate Voltage

Fig 19. Maximum Avalanche Energy Vs. Drain Current

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IRF7389
1400
VGS = 0V f = 1 MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd SHORTED

P-Channel
20

ID = -4.9A VDS =-15V

1200

-VGS , Gate-to-Source Voltage (V)

A

16

C, Capacitance (pF)

1000

Ciss
Coss

800

12

600

400

Crss

200

0 1 10 100

0 0 10 20 30 40

- V DS , Drain-to-Source Voltage (V)

QG , Total Gate Charge (nC)

Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage

100

Thermal Response (Z thJA )

D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100

10

t1 , Rectangular Pulse Duration (sec)

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7389
Package Outline
SO8 Outline
INCHES MIN .0532 .0040 .014 .0075 .189 .150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99

D -B-

DIM
5

A
6 5 H 0.25 (.010) M A M

8 E -A-

A1 B C D E

e 6X

K x 45 e1 A

e e1 H K L

.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8

1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8

0.10 (.004) L 8X 6 C 8X

-CB 8X 0.25 (.010) NOTES: A1 M C A S B S

RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). 6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X 6.46 ( .255 )

1.78 (.070) 8X

Part Marking Information

SO8

EXAMPLE : THIS IS AN IRF7101 DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK XXXX WAFER LOT CODE (LAST 4 DIGITS)

312 INTERNATIONAL RECTIFIER LOGO F7101

100

TOP

PART NUMBER

BOTTOM

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IRF7389
Tape & Reel Information
SO8 Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 ) 11.7 ( .461 )

8.1 ( .318 ) 7.9 ( .312 )

FEED DIRECTION

NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/04

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