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Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 92
VDS
600 V
ID
3.3 A
RDS(on)
3
Package TO-220 AB
Maximum Ratings Parameter Continuous drain current Symbol Values 3.3 Unit A
ID IDpuls
13
TC = 25 C
Pulsed drain current
TC = 25 C
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse
3.3 6 mJ
VGS Ptot
20 80
V W
TC = 25 C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Semiconductor Group
C K/W
07/96
BUZ 92
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
600 3 0.1 10 10 2.6 4
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
IGSS
100
nA 3
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
RDS(on)
VGS = 10 V, ID = 2 A
Semiconductor Group
07/96
BUZ 92
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
2.1 3 600 65 25 -
S pF 900 100 40 ns 10 15
VDS 2 * ID * RDS(on)max, ID = 2 A
Input capacitance
Ciss Coss
-
Crss
-
td(on)
tr
50 70
td(off)
70 95
tf
40 55
Semiconductor Group
07/96
BUZ 92
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1 300 2.5 3.3 13 V 1.4 ns C Values typ. max. Unit
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 6.6 A
Reverse recovery time
Semiconductor Group
07/96
BUZ 92
90 W
Ptot
70 60
ID
50 1.6 40 30 20 10 0 0 1.2
TC
TC
ID
10 1
t = 37.0s p
ZthJC
10 0
100 s
10 -1
/I
D = 0.50
1 ms
10
=V
DS
10 -2
DS (on )
10 ms
10 -3
10 -1 0 10
DC 10
1
10
V 10
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
VDS
tp
Semiconductor Group
07/96
BUZ 92
Ptot = 80W
k j i h g f
V [V] e GS a 4.0
b 4.5 c 5.0
RDS (on)
8 7 6 5
ID
6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 10 20 30 40
d 5.5
e 6.0 f 6.5
g 7.0 h 7.5
i j
8.0 9.0
4
g
f i k h j
k 10.0 l 20.0
3 2 1
VGS [V] =
a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5
55
0 0.0
1.0
2.0
3.0
4.0
5.0
7.0
VDS
ID
ID
2.4
gfs
2.8 2.4
2.0 2.0 1.6 1.6 1.2 1.2 0.8 0.8 0.4 0.0 0.0
0.4 0.0 0 1 2 3 4 5 6 7 8 V 10
0.4
0.8
1.2
1.6
2.0
VGS
A ID
2.6
Semiconductor Group
07/96
BUZ 92
12
98%
RDS (on) 11
10 9 8 7 6 5 4 3 2 1 0 -60
VGS(th)
typ
2%
98% typ
-20
20
60
100
160
Tj
Tj
Typ. capacitances
nF C 10 0
IF
10 1
Ciss
10 -1
10 0
Coss
Crss
10 -2 0
10
15
20
25
30
V VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
3.0
VSD
Semiconductor Group
07/96
BUZ 92
V 200
EAS
180 160
VGS
12
10 140 120 100 6 80 60 40 2 20 0 20 0 40 60 80 100 120 C 160 0 5 10 15 20 25 30 35 nC 45 4 8 0,2 VDS max 0,8 VDS max
Tj
Q Gate
-20
20
60
100
160
Tj
Semiconductor Group
07/96
BUZ 92
Semiconductor Group
07/96
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