VCR11N

N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR

FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation@TA=25C Maximum Current Forward Gate Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage 25V 25V *Contact the factory for surface mount package options and pin outs. ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL BVGSS VGS(off) IGSS rds(on) rDS1 rDS2 Cdgo Csgo CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate Reverse Current Dynamic Drain to Source On Resistance Static Drain to Source On Resistance Ratios Drain to Gate Capacitance Source to Gate Capacitance MIN -25 -8 100 100 0.95 0.95 -12 -0.2 200 200 1 1 8 8 pF pF TYP MAX UNITS V nA CONDITIONS IG = -1A, VDS = 0V ID = 1A, VDS = 10V VGS = -15V, VDS = 0V VGS = 0V, ID = 500A VGS = 0V, ID = 1mA VGS = 0V, ID = 500A VGS = 0V, ID = 1mA VGD = -10V, IS = 0A, f = 1MHz VGS = -10V, ID = 0A, f = 1MHz 10mA 300mW -65 to +150 C -55 to +135 C 100 to 200

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Absolute maximum ratings are limiting values above which serviceability may be impaired.

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Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protg of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.

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Doc 20116 8/16/12 Rev A14 ECN# VCR11N