MODEL CARD

* Beta Version

rem4 = 0.2

+ll

metal3&metal4)

rev4 = 1

lln

MICROWIND 3.0

* metal 4

rem5 = 0.2

+lw

* Rule File for CMOS 22nm

rb01 = 3

(width)

rev5 = 1

lwn

NAME CMOS 22nm - 8 Metal

rb02 = 4

(spacing)

rem6 = 0.1

+lwl

=0

* techno options

* via 4

* Parasitic capacitances

xpart

=0

lambda = 0.020 // Lambda is set

rc01 = 3

(Via width)

cedram = 150000 (embedded

6.5e-010

to half the gate size)

rc02 = 4

(Spacing)

Dram surface capacitance

+dlcig = 1.35e-009

metalLayers = 8 // Number of

rc04 = 2

(border of

aF/m2)

+vth0

metal layers)

metal4&metal5)

cmim = 10000

0.2

* metal 5

cpoOxyde= 28000 (Surface

=0

salicide=1

ra04 = 2

// salicide option

mimcapa = 1

// Mim capa

edram = 1

// embedded dram

fram = 1

// embedded fram

(border of

=0
=1

=1

wwl

=0

toxref =
xl

k2

capacitance Poly/Thin oxyde

+k3b

(spacing)

aF/m2)

2.5e-006

= -9e-9
k1

=0

=0

dvt1

=0

wwn

= 0.3692

(width)

(Poly/Body)

=1

ww

=1

rd02 = 8

cpobody = 80

=0

=0

rd01 = 8
* via 5

wl
wln

k3

w0
dvt0

=1

=2

lowk = 2.2

// low K dielectric

re01 = 5

(Via width)

cmebody = 28

+dvt2

=0

dvt0w = 0

gatek = 7.0

// high K gate

re02 = 5

(Spacing)

cmelineic = 42

dvt1w = 0

dvt2w = 0

dielectric

re04 = 2

(border of

cm2body = 30

+dsub

Design rules associated to each

metal5&metal6)

cm2lineic = 20

0.05

layer

* metal 6

cm3body = 30

dvtp0 = 1e-011

* Well

rd01 = 8

cm3lineic = 20

+dvtp1 = 0.1

(width)

= 0.078

(well width)

rd02 = 15 (spacing)

cm4body = 30

lpeb

r102 = 11

(well spacing)

* Passivation nitride and pad

cm4lineic = 20

009

rules

cm5body = 30

=0

+ngate = 1e+023

r201 = 4

(diffusion width)

rp01 = 800 (Pad width)

cm5lineic = 20

1.2e+019

r202 = 4

(diffusion spacing)

rp02 = 800 (Pad spacing)

cm6body = 30

phin

r203 = 6

(border of nwell on

rp03 = 40 (Border of Vias)

cm6lineic = 25

+cdsc

rp04 = 40 (Border of metals)

cgsn = 500

rp05 = 200 (to unrelated active

capa of nMOS)

+voff

diffp)
r204 = 6

(nwell to next diffn)

* Poly

( Gate/source

xj

nsd

=0

cit

= -0.13

areas)

cgsp = 500

2.3

* Thickness of conductors for

* Vertical crosstalk

etab

=0

r302 = 2

(gate length)

process aspect

cm2me = 50

+vfb

= -1.058

r303 = 4

(high voltage gate

* All in m

cm3m2 = 50

0.0181

eta0

ua

* Shallow tretch isolation

cm4m3 = 50

ub

r304 = 3

(poly spacing)

thsti = 0.3

cm5m4 = 50

+uc

r305 = 1

(spacing poly and

hesti = -0.3

cm6m5 = 50

200000

unrelated diff)

thpoly = 0.10

* Lateral Crosstalk

ags

r306 = 4

hepoly = 0.15

cmextk = 10

+a1

source diff)

thdn = 0.1

capacitance for crosstalk

b0

r307 = 2

thdp = 0.1

coupling in aF/m)

+keta

thnw = 0.5

cm2xtk = 12

dwb

(extra gate poly)

* Contact

(Lineic

(C is computed

=0

=0
= 0.04
=0

using Cx=cmextk*l/spacing)

+pdiblc1 = 0.001

cm3xtk = 12

0.001

r403 = 1

(metal border for

heme = 0.5

cm4xtk = 12

drout

thm2 = 0.35

cm5xtk = 12

+pvag

hem2 = 1.2

cm6xtk = 12

0.001

thm3 = 0.35

* Junction capacitances

pscbe2 = 1e-007

hem3 = 1.9

cdnpwell = 350 (n+/psub)

+fprout = 0.2

thm4 = 0.35

cdpnwell = 300 (p+/nwell)

0.01

contact)
r406 = 2

(dist contact poly

(nwell/psub)

pditsl = 2300000

(pwell/nsub)

+rsh

=5

* metal

hem5 = 3.3

cldn = 100

rsw

= 30

rdsw
rdw

r501 = 3

(metal width)

thm6 = 0.5

capacitance N+/P- aF/m)

+rdswmin = 0

r502 = 4

(metal spacing)

hem6 = 4.0

cldp = 100

thpass = 0.5

* PTM 22nm Metal Gate / High-K

prwg

(Via width)

hepass = 6.0

.model nmos nmos level = 54

+prwb

r602 = 4

(Spacing)

thnit = 0.6

+version = 4.0

binunit = 1

alpha0 = 0.074

r604 = 2

(border of

mobmod

0.005

paramchk= 1
=0

* metal 2

* Unit is ohm/square

+capmod = 2

r701 = 3

(Metal 2 width)

repo = 4

r702 = 4

(spacing)

repu = 40

geomod = 1

redn = 25

+diomod = 1

* via 2

igbmod = 1

=0

wr

0.0002
+egidl = 0.8

rdsmod =

rbodymod= 1

0.012

aigbacc =

bigbacc = 0.0028

(Via width)

reun = 250

(Spacing)

redp = 30

rgatemod= 1

+nigbacc = 1

r804 = 2

(border of

reup = 300

+permod = 1

0.014

metal2&metal3)

rep2 = 4

acnqsmod= 0

cigbinv = 0.004

* metal 3

reco = 2

trnqsmod= 0

reme = 0.2

+tnom

r902 = 4

(spacing)

revi = 1

6.5e-010

* via 3

rem2 = 0.2

toxm

ra01 = 3

(Via width)

rev2 = 2

+dtox

ra02 = 4

(Spacing)

rem3 = 0.2

3.9

rev3 = 2

lint

= 27

cigbacc = 0.002

toxe
toxp

= 4e-010

= 6.5e-010
= 2.5e-010
wint
= 1.35e-009

agidl =

cgidl = 0.0002

r802 = 4

(width)

=1

alpha1 =

bgidl = 2.1e+009

r801 = 3

r901 = 3

rdwmin =

=0

+beta0 = 30
igcmod =

= 60
= 30

rswmin = 0

r601 = 3

* Resistances

pdits =

pditsd = 0.23

cpwell = 100

henit = 6.5

delta =

pscbe1 = 2.0e+009

cnwell = 250

metal&metal2)

=0
= 0.06

pdiblc2 =

= 1e-020

thm5 = 0.35

* via

dwg

= 0.5

hem4 = 2.6

(Idem for P+/N-)

=1
=0

pdiblcb = -0.005

gate)

(Lineic

pclm

thme = 0.35

(diff border for

=1

b1

thep = 2.0

r405 = 1

u0

= -5e-010

a2

=0

(contact spacing)

contact)

= 0.0045

=0

(contact width)

(poly border for

=0

nfactor =

vsat
a0

r402 = 3

r404 = 1

= 1.7e-018

r401 = 2

contact)

ndep
= 2e+020

cdscb = 0

cdscd = 0

(poly width)

(width of drain and

=0

= 7.2e-

=0

r301 = 2

length)

lpe0

r101 = 10
* Diffusion

minv

voffl = 0

+eigbinv = 1.1

nigbinv = 3

aigc

bigc

= 0.0213

= 5e-009

0.0025889
+cigc

epsrox =

aigbinv =

bigbinv = 0.004

0.0213

= 0.002

aigsd =

bigsd = 0.0025889

cigsd = 0.002

+nigc

=1

poxedge = 1

pigcd = 1

ntox

+xrcrg1 = 12
+cgso
cgdl

=0

= 7.5e-013

+cgsl

= 7.5e-013

1e-007
cf

cgdo

cgbo

cle

clc

vfbcv = -1
noff

kt2

=1

kt1l

= 0.022

+ua1
prt

ub1

uc1

noib

= 6.25e+041

af

em

=1
tnoia = 1.5

tnoib = 3.5

ntnoi = 1

= 1.2e-006

2.4e-013
njs

jsws

=1

0.1

bvs

ijthsrev=
= 10

xjbvs

=1

+jsd

= 1.2e-006

jswd

xjbvd = 1
cjs
mjs

= 0.5
mjsws

cjswgs = 2.1e-010

= 0.0018
mjswd

pbswgd = 1
tpb

=0

tpbswg = 0

tcjswg = 0
+dmcg
dmdg
+dwj
xgl

=0

tpbsw = 0
xtis

=0

=3

dmci

=0

+rshg
rbpd

etab

=0

+vfb

= -1.058

gbmin =
=5

=0

= 15

ngcon = 1

.model pmos pmos level = 54

= 0.0037

78000

a0

=0

=1
dwg

=0
= 0.1

pdiblc2 =

pdiblcb = 3.4e-008
= 1e-020

delta =

pscbe1 = 2e+009

+fprout = 0.2
0.08

=5
= 30

rdw

= 60
= 30

rdwmin =

rswmin = 0
wr

=1

0.0002

bigbacc = 0.0028

+nigbacc = 1

+eigbinv = 1.1

+dtox
3.9
lint

= 2.7e-010

= 0.012731

wint
= 1.35e-009

= 5e-009

+nigc

+rbps
rbsb

=3

dmdg
xgw

=0
=0

=0
= 0.1
rbpb

gbmin =
= 50

= 50
= 50
= 50

rbdb

= 50

ngcon = 1

* CIF Layers

cif diffp 17 0.02

=1

+cgso

bigc

aigsd =

cif metal 23 0.0125

cif via2 32 0.0125

cif metal4 36 0.0125

cif via4 52 0.0125

ntox

cgbo

= 3e-011

cif via5 54 0.0

cif metal6 55 0.0
cif passiv 31 0.0

poxedge = 1

= 7e-011

7e-011

cif poly 13 0.0

cif via3 35 0.0125

bigsd = 0.00115

pigcd = 1

cgdl

=0

cif metal5 53 0.0

= 0.0008

+xrcrg1 = 12
epsrox =

tpbswg = 0
xtis

cif metal3 34 0.0125

nigbinv = 3

cigsd = 0.0008

= 6.7e-010

=0

+dmcg

=0

cif metal2 27 0.0125

bigbinv = 0.004

trnqsmod= 0

toxm

+tcjsw

tpb
tpbsw = 0

cif via 25 0.0125

aigbinv =

0.012731

= 4e-010

=0

cif contact 19 0.025

aigbacc =

acnqsmod= 0

toxp

tcj

cif aarea 2 0.0

bgidl = 2.1e+009

+cigc

6.7e-010

+mjswgd = 0.33

cif nwell 1 0.0

alpha1 =
agidl =

+permod = 1

mjswd

pbswgd = 1

cif diffn 16 0.02

+beta0 = 30

0.00115

toxe

mjsws

cjswgs = 2e-010

overetch

=0

cigbinv = 0.004

= 27

= 9.4e-011

* MicroWind layer, CIF layer,

=0

rgatemod= 1

+tnom

= 0.5

cjswgd = 2e-010

rbpd
rdsw

0.005

aigc

cjs
mjs

1e-012

pditsl = 2300000

0.014

rbodymod= 1

= 0.0015

+rshg

pditsd = 0.23

+rsh

=1

+xgl
pdits =

cigbacc = 0.002

rdsmod =

jswd

jswgd = 4e-013

dmcgt = 0

pscbe2 = 9.58e-007

0.012

+diomod = 1

= 2e-007

tcjswg = 0

mobmod

geomod = 1

=1

+jsd

= 0.33

= 0.6

paramchk= 1

igbmod = 1

xjbvs

ijthsrev=
= 10

+cjswd = 9.4e-011

=0

+pdiblc1 = 0.001

+egidl = 0.8

bvs

= 0.33

pclm

binunit = 1

igcmod =

0.1

cjd

= -0.047

+version = 4.0

+capmod = 2

=1

+cjsws

=1

cgidl = 0.0002

=0

jsws

jswgs = 4e-013

pbsws = 1

b1

=0

prwg

4e-013

0.0015

a2

=0

drout

ntnoi = 1

= 2e-007

+pbs

= -5e-010

= 1e-020

dwb

tnoia = 1.5

4e-013

u0

vsat

alpha0 = 0.074
= 15

=0

nfactor =

= 1.6e-018

+uc

+prwb

rbdb

=0

xjbvd = 1
ua

= 15

rbsb

eta0

+rdswmin = 0

= 15

+rbps

cit

= -0.13

=1

+kf

njs

cdscb = 0

xgw

rbpb

= 2e+020

=0

=0
= 0.4

em
=1

+ijthsfwd= 0.1

rsw

=0

ndep

af

tnoib = 3.5

=0

dmcgt = 0

1e-010

= 7.2e-

+ngate = 1e+023

=0
=0

= 8.75e+009

+jss

0.01

+mjswgd = 0.33
=0

xj

=0

= 6.25e+041

= 3.125e+026

+noic
ef

lpe0

nsd

tnoimod =

noia

41000000

+dvtp1 = 0.05

+pvag

cjswgd = 2.1e-010

+tcjsw

=-

= -5.6e-011

= 33000

minv

=0
= -1.1

ub1

uc1

+fnoimod = 1
noib

0.001

+cjswd = 1.2e-010
= 0.33

dvt0w =

kt1l

=0

+at

2.3

=1

ute

= 1e-009

prt

voffl = 0

+voff

noff

= 0.022

1e-018

=1

= 0.1

+keta

= 1.2e-010

= 0.33

dvt2w = 0

b0

= 15
= -0.14

kt2

dvt1w = 0

+a1

pbsws = 1

tcj

dvt0

= -0.032

+cdsc

* End CMOS 32nm

ckappad

vfbcv = -1

+kt1

=2

ags

=1

+cjsws

w0

=0

riseTime = 0.001

=1

+ua1

=0

0.0023

jswgd = 2.4e-013

0.0018

k1

= -0.01

=0

ub

2.4e-013

cjd

k2

temperature = 27

voffcv = 0

= -0.25399

0.2

cdscd = 0

jswgs = 2.4e-013

+ijthsfwd= 0.1

+pbs

+moin

phin

=0

+jss

= 0.6

= -9e-9

4.4e+018

=1

+kf

=0

009

= 8.75e+009

41000000

+ckappas = 0.6
acde

lpeb

= 3.125e+026

+noic

=1

dvtp0 = 1e-011
tnoimod =

noia

wwn

= 0.6

= 1.1e-010

wwl

+dsub

= 33000

cf

toxref =

0.05

+fnoimod = 1

ef

=-

= -5.6e-011

=0

+at

=0

=0
xl

clc

cle

ww

=0

+dvt2

= -1.1

= 3e-011

xpart

2.5e-006

=0

ute

= 1e-009

1e-018

1e-007

=1

dvt1

= -0.154

+cgsl

=1

+lwl

k3

voffcv = 0
+kt1

lwn

+k3b

= 15

=0

=0

+vth0
ckappad

=1

+moin

+lw

wl
wln

+dlcig = 1.35e-009

= 1.1e-010

acde

=0
=1

6.7e-010

= 0.6

+ckappas = 0.6
= 0.6

+ll
lln

xrcrg2 = 5

= 7e-011

7e-011

=1

=1

* MicroWind simulation

xrcrg2 = 5
cgdo
=0

cif text 94.0 0.0

parameters
deltaT = 0.1e-12 (Minimum
simulation interval dT)
vdd = 0.35
hvdd = 1.2