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Data Sheet No. PD60172 Rev.G I R 2 1 8 1 ( 4 )(S) &

Data Sheet No. PD60172 Rev.G

IR2181 ( 4 )(S) & (PbF)

Features

Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

Gate drive supply range from 10 to 20V

Undervoltage lockout for both channels

3.3V and 5V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5V offset.

Lower di/dt gate driver for better noise immunity

Output source/sink current capability 1.4A/1.8A

Also available LEAD-FREE (PbF)

HIGH AND LOW SIDE DRIVER

Packages

8-Lead PDIP IR2181
8-Lead PDIP
IR2181

8-Lead SOIC

IR2181S

14-Lead PDIP IR21814 14-Lead SOIC
14-Lead PDIP
IR21814
14-Lead SOIC

IR21814S

IR2181/IR2183/IR2184 Feature Comparison

   

     

   

 

 

 

Description

The IR2181(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Pro- prietary HVIC and latch immune

CMOS technologies enable rugge- dized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross- conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Typical Connection

IR2181 IR21814 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
IR2181
IR21814
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.

IR2181 ( 4 ) (S) & (PbF)

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param- eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

are measured under board mounted and still air conditions. Symbol Definition Min. Max. Units V B

Symbol

Definition

Min.

Max.

Units

V

B

High side floating absolute voltage

-0.3

625

 

V

S

High side floating supply offset voltage

V B - 25

V B + 0.3

 

V

HO

High side floating output voltage

V S - 0.3

V B + 0.3

 

V

CC

Low side and logic fixed supply voltage

-0.3

25

 

V

LO

Low side output voltage

-0.3

V CC + 0.3

V

V

IN

Logic input voltage (HIN & LIN - IR2181/IR21814)

V SS - 0.3

V SS

+ 10

 

V

SS

Logic ground (IR21814 only)

V CC - 25

V CC + 0.3

 

dV

S /dt

Allowable offset supply voltage transient

50

V/ns

P

D

Package power dissipation @ T A +25°C

(8-lead PDIP)

1.0

 
 

(8-lead SOIC)

0.625

(14-lead PDIP)

1.6

W

(14-lead SOIC)

1.0

Rth JA

Thermal resistance, junction to ambient

(8-lead PDIP)

125

 

(8-lead SOIC)

200

°C/W

(14-lead PDIP)

75

(14-lead SOIC)

120

T

J

Junction temperature

150

 

T

S

Storage temperature

-50

150

°C

T

L

Lead temperature (soldering, 10 seconds)

300

 

Recommended Operating Conditions

The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The V S and V SS offset rating are tested with all supplies biased at 15V differential.

Symbol

Definition

Min.

Max.

Units

VB

High side floating supply absolute voltage

V S + 10

V S + 20

 

V

S

High side floating supply offset voltage

Note 1

600

 

V

HO

High side floating output voltage

V

S

 

V

B

 

V

CC

Low side and logic fixed supply voltage

10

 

20

V

V

LO

Low side output voltage

0

V

CC

 

V

IN

Logic input voltage (HIN & LIN - IR2181/IR21814)

V

SS

V SS

+ 5

 

V

SS

Logic ground (IR21814/IR21824 only)

-5

 

5

 
 

T

A

Ambient temperature

-40

125

°C

Note 1: Logic operational for V S of -5 to +600V. Logic state held for V S of -5V to -V BS . (Please refer to the Design Tip DT97-3 for more details). Note 2: HIN and LIN pins are internally clamped with a 5.2V zener diode.

Dynamic Electrical Characteristics V B I A S (V C C , V B S

Dynamic Electrical Characteristics

V BIAS (V CC , V BS ) = 15V, V SS = COM, C L = 1000 pF, T A = 25°C.

IR2181 ( 4 ) (S) & (PbF)

Symbol

Definition

Min.

Typ.

Max.

Units

Test Conditions

t

on

Turn-on propagation delay

 

— 180

270

 

V S = 0V

t

off

Turn-off propagation delay

 

— 220

330

 

V S = 0V or 600V

 

MT

Delay matching, HS & LS turn-on/off

 

— 0

35

nsec

 
 

t

r

Turn-on rise time

 

— 40

60

 

V S = 0V

 

t

f

Turn-off fall time

 

— 20

35

 

V S = 0V

Static Electrical Characteristics

V BIAS (V CC , V BS ) = 15V, V SS = COM and T A = 25°C unless otherwise specified. The V IL , V IH and I IN parameters are referenced to V SS /COM and are applicable to the respective input leads HIN and LIN. The V O , I O and Ron parameters are referenced to COM and are applicable to the respective output leads: HO and LO.

Symbol

Definition

Min.

Typ.

Max.

Units

Test Conditions

 

V

IH

Logic “1” input voltage (IR2181/IR21814 )

2.7

 

V CC = 10V to 20V

 

V

IL

Logic “0” input voltage (IR2181/IR21814)

0.8

V

V CC = 10V to 20V

 

V

OH

High level output voltage, V BIAS - V O

1.2

 

I O = 0A

 

V

OL

Low level output voltage, V O

0.1

 

I O = 0A

 

I

LK

Offset supply leakage current

50

 

V B = V S = 600V

 

I QBS

Quiescent V BS supply current

20

60

150

 

V IN = 0V or 5V

 

I QCC

Quiescent V CC supply current

50

120

240

µA

V IN = 0V or 5V

 

I IN+

Logic “1” input bias current

25

60

 

V IN = 5V

 

I IN-

Logic “0” input bias current

1.0

 

V IN = 0V

V

CCUV+

V CC and V BS supply undervoltage positive going

8.0

8.9

9.8

   

V

BSUV+

threshold

V

CCUV-

V CC and V BS supply undervoltage negative going

7.4

8.2

9.0

V

 

V

BSUV-

threshold

V

CCUVH

Hysteresis

0.3

0.7

   

V

BSUVH

 

I O+

Output high short circuit pulsed current

1.4

1.9

 

V O = 0V,

 

A

PW 10 µs

 

I O-

Output low short circuit pulsed current

1.8

2.3

 

V O = 15V, PW 10 µs

IR2181 ( 4 ) (S) & (PbF)

Functional Block Diagrams

8 1 ( 4 ) (S) & (PbF) Functional Block Diagrams VB 2181 UV DETECT HO
VB 2181 UV DETECT HO R R Q PULSE HV FILTER LEVEL S SHIFTER VSS/COM
VB
2181
UV
DETECT
HO
R
R
Q
PULSE
HV
FILTER
LEVEL
S
SHIFTER
VSS/COM
VS
HIN
LEVEL
PULSE
SHIFT
GENERATOR
VCC
UV
DETECT
LO
VSS/COM
LIN
LEVEL
DELAY
SHIFT
COM
VB
21814
UV
DETECT
HO
R
R
Q
PULSE
HV
FILTER
LEVEL
S
SHIFTER
VSS/COM
VS
HIN
LEVEL
PULSE
SHIFT
GENERATOR
VCC
UV
DETECT
LO
VSS/COM
LIN
LEVEL
DELAY
SHIFT
COM
VSS
Lead Definitions I R 2 1 8 1 ( 4 ) (S) & (PbF) Symbol

Lead Definitions

IR2181 ( 4 ) (S) & (PbF)

Symbol

Description

HIN

Logic input for high side gate driver output (HO), in phase (IR2181/IR21814)

LIN

Logic input for low side gate driver output (LO), in phase (IR2181/IR21814)

VSS

Logic Ground (IR21814 only)

V

B

High side floating supply

HO

High side gate drive output

V

S

High side floating supply return

V

CC

Low side and logic fixed supply

LO

Low side gate drive output

COM

Low side return

Lead Assignments

   
       
   

1

HIN

V

B

8

2

LIN

HO

7

3

COM

V

S

6

4

LO

V

CC

5

8-Lead PDIP

IR2181

   
       
   

1

HIN

V

B

8

2

LIN

HO

7

3

COM

V

S

6

4

LO

V

CC

5

8-Lead SOIC

IR2181S

14 1 HIN 14 1 HIN V 2 LIN 13 B V 2 LIN 13
14
1
HIN
14
1
HIN
V
2
LIN
13
B
V
2
LIN
13
B
HO
3
VSS
12
HO
3
VSS
12
V
4
11
S
V
4
11
S
5
COM
10
5
COM
10
6
LO
9
6
LO
9
7
V
8
CC
7
V
8
CC
14-Lead SOIC
14-Lead PDIP
IR21814
IR21814S

IR2181 ( 4 ) (S) & (PbF)

I R 2 1 8 1 ( 4 ) (S) & (PbF) Figure 1. Input/Output Timing

Figure 1. Input/Output Timing Diagram

4 ) (S) & (PbF) Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions
Figure 2. Switching Time Waveform Definitions
Figure 2. Switching Time Waveform Definitions
Figure 3. Delay Matching Waveform Definitions
Figure 3. Delay Matching Waveform Definitions
500 400 300 M ax. 200 Typ. 100 0 -50 -25 0 25 50 75
500 400 300 M ax. 200 Typ. 100 0 -50 -25 0 25 50 75
500
400
300
M ax.
200
Typ.
100
0
-50
-25
0
25
50
75
100
125
Turn-on Propagation Delay (ns)

Temperature ( o C)

Figure 4A. Turn-on Propagation Delay vs. Temperature

600 500 400 300 M ax. 200 Typ. 100 -50 -25 0 25 50 75
600
500
400
300
M ax.
200
Typ.
100
-50
-25
0
25
50
75
100
125
Turn-off Propagation Delay (ns)

Temperature ( o C)

Figure 5A. Turn-off Propagation Delay vs. Temperature

IR2181 ( 4 ) (S) & (PbF)

500 400 M ax. 300 Typ. 200 100 0 10 12 14 16 18 20
500
400
M ax.
300
Typ.
200
100
0
10
12
14
16
18
20
Turn-on Propagation Delay (ns)

Supply Voltage (V)

Figure 4B. Turn-on Propagation Delay vs. Supply Voltage

600 500 400 M ax. 300 Typ. 200 100 0 10 12 14 16 18
600
500
400
M ax.
300
Typ.
200
100
0
10
12
14
16
18
20
Turn-off Propagation Delay (ns)

Supply Voltage (V)

Figure 5B. Turn-off Propagation Delay vs. Supply Voltage

IR2181 ( 4 ) (S) & (PbF)

120 100 80 60 40 M ax. Typ. 20 0 -50 -25 0 25 50
120
100
80
60
40
M
ax.
Typ.
20
0
-50
-25
0
25
50
75
100
125
Turn-on Rise Time (ns)

Temperature ( o C)

Figure 6A. Turn-on Rise Time vs. Temperature

80 60 40 M ax. Typ 20 0 -50 -25 0 25 50 75 100
80
60
40
M
ax.
Typ
20
0
-50
-25
0
25
50
75
100
125
Turn-off Fall Time (ns)

Temperature ( o C)

Figure 7A. Turn-off Fall Time vs. Temperature

( o C) Figure 7A. Turn-off Fall Time vs. Temperature 120 100 M ax. 80 60
120 100 M ax. 80 60 Typ. 40 20 0 10 12 14 16 18
120
100
M ax.
80
60
Typ.
40
20
0
10
12
14
16
18
20
Turn-on Rise Time (ns)

Supply Voltage (V)

Figure 6B. Turn-on Rise Time vs. Supply Voltage

80 60 M ax. 40 Typ. 20 0 10 12 14 16 18 20 Turn-off
80
60
M ax.
40
Typ.
20
0
10
12
14
16
18
20
Turn-off Fall Time (ns)

Supply Voltage (V)

Figure 7B. Turn-off Fall Time vs. Supply Voltage

6 5 4 3 M in. 2 1 0 -50 -25 0 25 50 75
6 5 4 3 M in. 2 1 0 -50 -25 0 25 50 75
6
5
4
3
M
in.
2
1
0
-50
-25
0
25
50
75
100
125
Temperature ( o C)
Figure 8A. Logic "1" Input Voltage
vs. Temperature
6
5
4
3
2
M
ax.
1
0
-50
-25
0
25
50
75
100
125
Logic "0" Input Voltage (V)
Logic "1" Input Voltage (V)

Temperature ( o C)

Figure 9A. Logic "0" Input Voltage vs. Temperature

IR2181 ( 4 ) (S) & (PbF)

6 5 4 3 M in. 2 1 0 10 12 14 16 18 20
6
5
4
3
M in.
2
1
0
10
12
14
16
18
20
Supply Voltage (V)
Figure 8B. Logic "1" Input Voltage
vs. Supply Voltage
6
5
4
3
2
M ax.
1
0
10
12
14
16
18
20
Logic "1" Input Voltage (V)
Logic "0" Input Voltage (V)

Supply Voltage (V)

Figure 9B. Logic "0" Input Voltage vs. Supply Voltage

IR2181 ( 4 ) (S) & (PbF)

5 4 3 2 M ax. 1 0 High Level Output (V)
5
4
3
2
M ax.
1
0
High Level Output (V)
-50 -25 0 25 50 75 100 125 Temperature ( o C) Figure 10A. High
-50
-25
0
25
50
75
100
125
Temperature ( o C)
Figure 10A. High Level Output vs. Temperature
0.5
0.4
0.3
0.2
M ax.
0.1
0.0
-50
-25
0
25
50
75
100
125
Low Level Output (V)

Temperature ( o C)

Figure 11A. Low Level Output vs. Temperature

( o C) Figure 11A. Low Level Output vs. Temperature 5 4 3 2 M ax.
5 4 3 2 M ax. 1 0 10 12 14 16 18 20 Supply
5
4
3
2
M ax.
1
0
10
12
14
16
18
20
Supply Voltage (V)
Figure 10B. High Level Output vs. Supply Voltage
0.5
0.4
0.3
0.2
M ax.
0.1
0.0
10
12
14
16
18
20
Low Level Output (V)
High Level Output (V)

Supply Voltage (V)

Figure 11B. Low Level Output vs. Supply Voltage

500 400 300 200 100 M ax. 0 -50 -25 0 25 50 75 100
500 400 300 200 100 M ax. 0 -50 -25 0 25 50 75 100
500
400
300
200
100
M ax.
0
-50
-25
0
25
50
75
100
125
Offset Supply Leakage Current (
A)◊

Temperature ( o C)

Figure 12A. Offset Supply Leakage Current vs. Temperature

250 200 M ax. 150 100 Typ. 50 M in. 0 -50 -25 0 25
250
200
M
ax.
150
100
Typ.
50
M
in.
0
-50
-25
0
25
50
75
100
125
V
A)◊
BS Supply Current (

Temperature ( o C)

Figure 13A. V BS Supply Current vs. Temperature

IR2181 ( 4 ) (S) & (PbF)

500 400 300 200 100 M ax. 0 100 200 300 400 500 600 Offset
500
400
300
200
100
M ax.
0
100
200
300
400
500
600
Offset Supply Leakage Current (
A)◊

V B Boost Voltage (V)

Figure 12B. Offset Supply Leakage Current vs. V B Boost Voltage

250 200 150 M ax. 100 Typ. 50 M in. 0 10 12 14 16
250
200
150
M
ax.
100
Typ.
50
M
in.
0
10
12
14
16
18
20
V
A)◊
BS Supply Current (

V BS Floating Supply Voltage (V)

Figure 13B. V BS Supply Current vs. V BS Floating Supply Voltage

IR2181 ( 4 ) (S) & (PbF)

500 400 300 M ax. 200 Typ. 100 M in. 0 -50 -25 0 25
500
400
300
M
ax.
200
Typ.
100
M
in.
0
-50
-25
0
25
50
75
100
125
V
A)◊
CC Supply Current (

Temperature ( o C)

Figure 14A. V CC Supply Current vs. V CC Temperature

120 100 80 60 M ax. 40 Typ. 20 0 -50 -25 0 25 50
120
100
80
60
M
ax.
40
Typ.
20
0
-50
-25
0
25
50
75
100
125
Logic "1" Input Bias Current (
A)◊

Temperature ( o C)

Figure 15A. Logic "1" Input Bias Current vs. Temperature

15A. Logic "1" Input Bias Current vs. Temperature 500 400 300 M ax. 200 Typ. 100
500 400 300 M ax. 200 Typ. 100 M in. 0 10 12 14 16
500
400
300
M
ax.
200
Typ.
100
M
in.
0
10
12
14
16
18
20
V CC Supply Voltage (V)
Figure 14B. V CC Supply Current
vs. V CC Supply Voltage
120
100
80
60
M ax.
40
Typ.
20
0
10
12
14
16
18
20
Logic "1" Input Bias Current (
A)◊
V
A)◊
CC Supply Current (

Supply Voltage (V)

Figure 15B. Logic "1" Input Bias Current vs. Supply Voltage

5 4 3 2 M ax. 1 0 -50 -25 0 25 50 75 100
5 4 3 2 M ax. 1 0 -50 -25 0 25 50 75 100
5
4
3
2
M ax.
1
0
-50
-25
0
25
50
75
100
125
Logic "0" Input Bias Current (
A)◊

Temperature ( o C)

Figure 16A. Logic "0" Input Bias Current vs. Temperature

12 11 10 M ax. Typ. 9 M in. 8 7 6 -50 -25 0
12
11
10
M
ax.
Typ.
9
M
in.
8
7
6
-50
-25
0
25
50
75
100
125
V CC and V BS UV Threshold (+) (V)

Temperature ( o C)

Figure 17. V CC and V BS Undervoltage Threshold (+) vs. Temperature

IR2181 ( 4 ) (S) & (PbF)

5 4 3 2 M ax. 1 0 10 12 14 16 18 20 Logic
5
4
3
2
M ax.
1
0
10
12
14
16
18
20
Logic "0" Input Bias Current (
A)◊

Supply Voltage (V)

Figure 16B. Logic "0" Input Bias Current vs. Supply Voltage

12 11 10 M ax. 9 Typ. 8 M in. 7 6 -50 -25 0
12
11
10
M
ax.
9
Typ.
8
M
in.
7
6
-50
-25
0
25
50
75
100
125
V CC and V BS UVThreshold (-) (V)

Temperature ( o C)

Figure 18. V CC and V BS Undervoltage Threshold (-) vs. Temperature

IR2181 ( 4 ) (S) & (PbF)

5 4 3 Typ. 2 M in. 1 0 -50 -25 0 25 50 75
5
4
3
Typ.
2
M in.
1
0
-50
-25
0
25
50
75
100
125
Output Source Current (A)

Temperature ( o C)

Figure 19A. Output Source Current vs. Temperature

5.0 4.0 3.0 Typ. 2.0 M in. 1.0 -50 -25 0 25 50 75 100
5.0
4.0
3.0
Typ.
2.0
M in.
1.0
-50
-25
0
25
50
75
100
125
Output Sink Current (A)

Temperature ( o C)

Figure 20A. Output Sink Current vs. Temperature

( o C) Figure 20A. Output Sink Current vs. Temperature 5 4 3 2 Typ. 1
5 4 3 2 Typ. 1 M in. 0 10 12 14 16 18 20
5
4
3
2
Typ.
1
M
in.
0
10 12
14
16
18
20
Output Source Current (A)

Supply Voltage (V)

Figure 19B. Output Source Current vs. Supply Voltage

5 4 3 2 Typ. 1 M in. 0 10 12 14 16 18 20
5
4
3
2
Typ.
1
M
in.
0
10 12
14
16
18
20
Output Sink Current (A)

Supply Voltage (V)

Figure 20B. Output Sink Current vs. Supply Voltage

140 120 100 80 140v 70v 60 0v 40 20 1 10 100 1000 Temprature
140 120 100 80 140v 70v 60 0v 40 20 1 10 100 1000 Temprature
140
120
100
80
140v
70v
60
0v
40
20
1 10
100
1000
Temprature ( o C)

Frequency (KHz)

Figure 21. IR2181 vs. Frequency (IRFBC20),

R gate =33, V CC =15V

140 120 100 140v 80 70v 0v 60 40 20 1 10 100 1000 Temperature
140
120
100
140v
80
70v
0v
60
40
20
1 10
100
1000
Temperature ( o C)

Frequency (KHz)

Fig u re 23.IR 2181 vs.Fre q u e n cy (IR FB C 40), R gate =15 ,V CC =15V

IR2181 ( 4 ) (S) & (PbF)

140 120 100 140v 80 70v 0v 60 40 20 1 10 100 1000 Temperature
140
120
100
140v
80
70v
0v
60
40
20
1
10
100
1000
Temperature o ( C)

Frequency (KHz)

Fig u re 22.IR 2181 vs.Fre q u e n cy (IR FB C 30),

R gate =22 ,V CC =15V

140v 140 70v 0v 120 100 80 60 40 20 1 10 100 1000 Temperature
140v
140
70v
0v
120
100
80
60
40
20
1
10
100
1000
Temperature o ( C)

Frequency (KHz)

Fig u re 24.IR 2181 vs .Fre q u e n cy (IR FP E50),

R gate =10 ,V CC =15V

IR2181 ( 4 ) (S) & (PbF)

140 120 100 80 60 140v 70v 40 0v 20 1 10 100 1000 Temperature
140
120
100
80
60
140v
70v
40
0v
20
1
10
100
1000
Temperature o ( C)

Frequency (KHz)

Fig u re 25.IR 21814 vs.Fre q u e n cy (IR FB C 20), R gate =33 ,V CC =15V

140 120 100 140v 80 70v 60 0v 40 20 1 10 100 1000 Temperature
140
120
100
140v
80
70v
60
0v
40
20
1
10
100
1000
Temperature ( o C)

Frequency (KHz)

Fig u re 27.IR 21814 vs.Fre q u e n cy (IR FB C 40), R gate =15 ,V CC =15V

(IR FB C 40), R g a t e =15 Ω ,V C C =15V 140
140 120 100 80 60 140v 70v 0v 40 20 1 10 100 1000 Temperature
140
120
100
80
60
140v
70v
0v
40
20
1 10
100
1000
Temperature ( o C)

Frequency (KHz)

Fig u re 26.IR 21814 vs.Fre q u e n cy (IR FB C 30), R gate =22 ,V CC =15V

140v 140 120 70v 100 0v 80 60 40 20 1 10 100 1000 Temperature
140v
140
120
70v
100
0v
80
60
40
20
1 10
100
1000
Temperature ( o C)

Frequency (KHz)

Fig u re 28.IR 21814 vs.Fre q u e n cy (IR FP E50), R gate =10 ,V CC =15V

I R 2 1 8 1 ( 4 ) (S) & (PbF) 140 120 100

IR2181 ( 4 ) (S) & (PbF)

140 120 100 80 140v 60 70v 0v 40 20 1 10 100 1000 Temperature
140
120
100
80
140v
60
70v
0v
40
20
1
10
100
1000
Temperature ( o C)

Frequency (KHz)

Fig u re 29.IR2181s vs.Fre q u e n cy (IR FB C 20), R gate =33 ,V CC =15V

140 120 140v 100 70v 80 0v 60 40 20 1 10 100 1000 Temperature
140
120
140v
100
70v
80
0v
60
40
20
1
10
100
1000
Temperature o ( C)

Frequency (KHz)

Fig u re 30.IR 2181s vs.Fre q u e n cy (IR FB C 30), R gate =22 ,V CC =15V

140v 70v 140 120 0v 100 80 60 40 20 1 10 100 1000 Temperature
140v 70v
140
120
0v
100
80
60
40
20
1
10
100
1000
Temperature ( o C)
Tempreture ( o C)

Frequency (KHz)

Fig u re 31.IR 2181s vs .Fre q u e n cy (IR FB C 40), R gate =15 ,V CC =15V

140

120

100

80

60

40

20

140V 70V 0V

1 10 100 1000
1
10
100
1000

Frequency (KHz)

Fig u re 32.IR 2181s vs .Fre q u e n cy (IR FP E50), R gate =10 ,V CC =15V

IR2181 ( 4 ) (S) & (PbF)

140 120 100 80 60 140v 70v 0v 40 20 1 10 100 1000 Temperature
140
120
100
80
60
140v
70v
0v
40
20
1 10
100
1000
Temperature ( o C)

Frequency (KHz)

Fig u re 33.IR 21814s vs.Fre q u e n cy (IR FB C 20),

R gate =33 ,V CC =15V

140 120 100 140v 80 70v 0v 60 40 20 1 10 100 1000 Temperature
140
120
100
140v
80
70v
0v
60
40
20
1 10
100
1000
Temperature o ( C)

Frequency (KHz)

Fig u re 35.IR 21814s vs .Fre q u e n cy (IR FB C 40),

R gate =15 ,V CC =15V

(IR FB C 40), R g a t e =15 Ω ,V C C =15V 140
140 120 100 80 140v 70v 60 0v 40 20 1 10 100 1000 Temperature
140
120
100
80
140v
70v
60
0v
40
20
1
10
100
1000
Temperature ( o C)

Frequency (KHz)

Fig u re 34.IR 21814s vs .Fre q u e n cy (IR FB C 30), R gate =22 ,V CC =15V

140v 70v 140 0v 120 100 80 60 40 20 1 10 100 1000 Temperature
140v 70v
140
0v
120
100
80
60
40
20
1
10
100
1000
Temperature o ( C)

Frequency (KHz)

Fig u re 36.IR 21814s vs.Fre q u e n cy (IR FP E50), R gate =10 ,V CC =15V

Case outlines I R 2 1 8 1 ( 4 ) (S) & (PbF) 8-Lead

Case outlines

IR2181 ( 4 ) (S) & (PbF)

8-Lead PDIP 01-6014 0 1 - 3 0 0 3 0 1 (MS-001AB)
8-Lead PDIP 01-6014 0 1 - 3 0 0 3 0 1 (MS-001AB)
8-Lead PDIP 01-6014 0 1 - 3 0 0 3 0 1 (MS-001AB)
8-Lead PDIP 01-6014 0 1 - 3 0 0 3 0 1 (MS-001AB)

8-Lead PDIP

01-6014

01-3003 01 (MS-001AB)

D B 5 A 8 7 6 5 6 H E 0.25 [.010] A 1
D
B
5
A
8
7
6
5
6
H
E
0.25 [.010]
A
1
2
3
4
6X
e

FOOTPRINT

8X 0.72 [.028] 6.46 [.255] 3X 1.27 [.050] 8X 1.78 [.070]
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
8X 1.78 [.070]

DIM

INCHES

MILLIMETERS

MIN

MAX

MIN

MAX

A

.0532

.0688

1.35

1.75

A1

.0040

.0098

0.10

0.25

b

.013

.020

0.33

0.51

c

.0075

.0098

0.19

0.25

D

.189

.1968

4.80

5.00

E

.1497

.1574

3.80

4.00

e

.050 BASIC

1.27 BASIC

e 1

.025 BASIC

0.635 BASIC

H

.2284

.2440

5.80

6.20

K

.0099

.0196

0.25

0.50

L

.016

.050

0.40

1.27

y

e1 A C 0.10 [.004] 8X b A1 0.25 [.010] CAB NOTES:
e1
A
C
0.10 [.004]
8X b
A1
0.25 [.010]
CAB
NOTES:

y

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.

K x 45° 8X L 7
K x 45°
8X L
7

8X c

CONFORMS TO JEDEC OUTLINE MS-012AA. K x 45° 8X L 7 8X c DIMENSION DOES NOT

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.

8-Lead SOIC

01-6027

01-0021 11 (MS-012AA)

IR2181 ( 4 ) (S) & (PbF)

I R 2 1 8 1 ( 4 ) (S) & (PbF) 14-Lead PDIP 01-6010 0
14-Lead PDIP 01-6010 0 1 - 3 0 0 2 0 3 (MS-001AC)
14-Lead PDIP 01-6010 0 1 - 3 0 0 2 0 3 (MS-001AC)
14-Lead PDIP 01-6010 0 1 - 3 0 0 2 0 3 (MS-001AC)

14-Lead PDIP

01-6010

01-3002 03 (MS-001AC)

14-Lead SOIC (narrow body) 01-6019 01-3063 00 (MS-012AB)
14-Lead SOIC (narrow body) 01-6019 01-3063 00 (MS-012AB)
14-Lead SOIC (narrow body) 01-6019 01-3063 00 (MS-012AB)
14-Lead SOIC (narrow body) 01-6019 01-3063 00 (MS-012AB)
14-Lead SOIC (narrow body) 01-6019 01-3063 00 (MS-012AB)

14-Lead SOIC (narrow body)

01-6019

01-3063 00 (MS-012AB)

I R 2 1 8 1 ( 4 ) (S) & (PbF) LEADFREE PART MARKING

IR2181 ( 4 ) (S) & (PbF)

LEADFREE PART MARKING INFORMATION Part number IRxxxxxx Date code YWW? IR logo ?XXXX Pin 1
LEADFREE PART MARKING INFORMATION
Part number
IRxxxxxx
Date code
YWW?
IR logo
?XXXX
Pin 1
Identifier
Lot Code
?
MARKING CODE
(Prod mode - 4 digit SPN code)
P
Lead Free Released
Non-Lead Free
Released
Assembly site code
Per SCOP 200-002

ORDER INFORMATION

Basic Part (Non-Lead Free) 8-Lead PDIP IR2181 order IR2181 8-Lead SOIC IR2181S order IR2181S 14-Lead PDIP IR21814 order IR21814 14-Lead SOIC IR21814 order IR21814S

Leadfree Part 8-Lead PDIP IR2181 order IR2181PbF 8-Lead SOIC IR2181S order IR2181SPbF 14-Lead PDIP IR21814 order IR21814PbF 14-Lead SOIC IR21814 order IR21814SPbF

order IR21814PbF 14-Lead SOIC IR21814 order IR21814SPbF Thisproduct has been designed and qualified for the

Thisproduct has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web Site http://www.irf.com Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105

10/15/2004