BJT 1. To have a good operating BJT we need an emitter efficiency gamma as close as possible to 1.

This is possible iff the flux of holes from base to emitter is minimised: this happens when emitter doping is much higher than emitter base. Then its convenient to have a dope of collector lower than the base to decreases the possibility of breakdown due to punch-through in the base (that is shorter than collector length) and also to reduce the early effect (reducing therefore the modulation of the undepleted base region). 2. A bipolar transistor operates in four region due to the four different possibilities of biasing. 1) CutOff region: Vbe and Vbc are smaller than the threshold voltage; this means that they both are reversed biased; current Ic and Ie are the small reverse saturation currents therefore negligible (then also Ib is close to zero); the behaviour is similar to an open circuit. 2) Saturation Region: Vbe and Vbc are both bigger than threshold voltage this means they are in forward bias; In this case both are blocked in a neighbourhood of the threshold voltage and currents are controlled by he external circuit; Vce is closed to zero for the KVL and therefore the behaviour of the transistor is close to an open circuit. 3) Forward active region: in this case we have Vbe bigger than threshold voltage and therefore in forward bias instead Vbc is smaller than Vgamma and therefore its in a reverse bias; if the transistor is well designed we have a net current flowing from emitter to collector passing from the base and a very small base current; all of them are related by parameters of the transitor; 4) Reverse active region: the principle of working is the same of forward active region; but actually its not working or working very badly due to the design of the transistor that in generale is made for working in forward active region. 3.