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# IIT ROORKEE EC 242 SPRING - 2013 TUTORIAL 5: [1] For an ideal MOS CAPACITOR fabricated on a p SILICON substrate having

ving doping density NA = 1017 /CC, and OXIDE thickness 100 Angstrom, calculate threshold voltage (VT), which is the GATE voltage needed to maintain channel INVERSION. [2] In class we have derived MID-GAP capacitance of an ideal MOS-CAP through solving general Poissons equation. Recall that in MID-GAP condition, MOS-CAP surface potential S = B. Now, instead solving general Poissons equation, find MID-GAP capacitance (CMG) and corresponding MID-GAP voltage (VMG) of a MOS-CAP using DEPLETION APPROXIMATION. For the parameter set provided in PROBLEM 1, find numerical values of CMG and VMG. OXIDE = 4 and, SILICON = 12. [3] Find FLAT-BAND capacitance (CFB) and FLAT-BAND voltage (VFB) of MOS-CAP in PROBLEM 1. If instead of a p- SILICON substrate, if you fabricate the MOS-CAP in PROBLEM 1 with an n- SILICON substrate, what would be the corresponding VT and VMG. [4] For MOS-CAP in PROBLEM 1, for an applied gate voltage VG = VT, calculate INVERSION charge QI, Electric field in OXIDE (EOX), Electric field in SEMICONDUCTOR (ES) and maximum depletion layer width WMAX. [5] In general, for a MOS-CAP, how will you relate surface potential S with the applied gate voltage VG. In principle it will tell you about variation of S with VG. Now considering general potential variable = (x, VG), where x is the co-ordinate in direction normal to the SILICON-OXIDE interface (opposite to the convention that we have followed in class), can you do depth profiling of INVERSION layer ; i.e. you need to find out INVERSION charge density (n) as n = n (x, VG). You may write a small C/C++ code to verify your result. Lets take a practical case: Find n = n (x, VT) for the MOS-CAP of PROBLEM 1. Interestingly after calculation you will see that INVERSION charge is not uniform, and it is strongly confined within few nm of SILICON-OXIDE interface. [6] Following PROBLEM 5 [and using parameter set of PROBLEM 1], by sweeping S from ACCUMULATION to STRONG-INVERSION, plot SEMICONDUCTOR CAPACITANCE CS with S. You may write a small C/C++ code to verify your result.