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Sol:
(a) We can see that 1Ω , 4Ω and 3Ω are in series so total resistance of circuit will be
Rt=1+4+3
Rt=8Ω
Given voltage is V=24v
Total current can be found using Ohm’s law (V=IR) OR
I=V/R=24/8
I=3A
Now this same current 3A is flowing through all series resistance so
Voltage across 1Ω will be V=IR1Ω
V=3x1=3v
Voltage across 4Ω will be V=IR4Ω
V=3X4=12V
Voltage across 3Ω will be V=IR3Ω
V= 3X3=9v
(b)
Voltage at point a relative to point d is
Vda=24v
Voltage at point b relative to point d is sum of voltage of 1Ω and 4Ω
Vdb=15v
Q. 2: Find the equivalent resistance of the network given below. Write each step of the
calculation to get maximum marks. Draw the circuit diagram of each step otherwise you
will lose your marks.
Solution:
Starting from right side we see, at point a current will not pass through 5Ω , 14kΩ and
9kΩ but follow easy path (short circuit path) and reach to point a passing from point b, c
and d so we neglect effect of 14, 5 and 9kΩ
2x2/2+2=1kΩ
Q.1.
Find Unknown values of I and V for given diagrams.
Sol:For the network in fig( a) The circuit is open circuit , therefore no current will pass
through the network. The voltage across the resistors must therefore be zero volts, as
determined by ohm’s law (V=IR=OV) with
the resistor simply acting as a connection from supply to the open circuit. The result is
that the open circuit voltage will be V=10v as shown in fig. below.
In fig. (b) The current IT will take the path of least resistance and since the short circuit
condition at the end of network is the least resistance path, all the current will pass
through short circuit. The voltage across the network will be same as that across the short
circuit and will be zero volts, as shown in fig.
Q.2.
First Identify and label each node in the network .Use nodal analysis to find Vx and the
power of 6Ω resistance..
Sol.
Fist of all we will identify and label each node,
15(11v3)+6v3=200
165V3+6v3=200
171v3=200
V3=1.16v
Q.3.
Find VAE and VCG in the circuit from all possible paths.
Solution:
Q # 1: Use Mesh analysis to find VO in the given network. Identify and label each mesh otherwise you
will lose your marks. Draw and labeled complete circuit diagram. Write each step of the calculation to get
maximum marks and also mention the units of each derived value.
Solution
Q # 2: Use Nodal analysis to find IO in the given network. Identify and label each node otherwise you
will lose your marks. Draw and labeled complete circuit diagram. Write each step of the calculation to get
maximum marks and also mention the units of each derived value.
Solution
Assignment No 4 Solution
Q # 1: Find Io by Superposition. Draw and label the circuit diagram of each step,
otherwise you will lose your marks. Write each step of calculation to get maximum
marks, also mention the units of each derived value.
Sol.
Applying principle of superposition, we will take effect of the sources one by one
V1.4k=4x1.4/2+1.4=5.6/3.4=1.64k
As 1.4K is resultant of 2k and 5k so same voltage will drop across each there
Io2 =V/1.4=1.64/5=0.3mA
Same current flows through 2k and 3k in series
Io=Io1+Io2
Io= 3+0.3
Io=3.3mA
From left side we see that 4mA and 4kΩ are in parallel and can be converted into voltage
source
V=IxR=4x4=16v
In converted circuit 4kΩ will become in series of 16v voltage source as shown in fig.
below.
From right side we see 2mA current source in parallel of 6kΩ that can be converted into
voltage source
V=IXR=2X6=12V
Circuit will adopt shape as
Solution:
In first step we remove load resistance RL that is 16Ω
In second step we find Vth at open terminal of circuit by nodal analysis, circuit will be as
KCL at Node V1
V1/10+(v1-v2)/5-4=0
V1+2V1-2V2=40
3V1-2V2=40 ……………(A)
KCL at Node V1
(V2-V1)/5+(V2-10)/4 =0
4V2-4V1+5V2-50=0
-4V1+9V2=50…………………(B)
Multiplying (A ) by 4 and (B) by 3 and adding we get
V2=Vth=16.3v
15Ω × 4Ω 60
15Ω 4Ω = = = 3.15Ω
15Ω + 4Ω 19
So Rth = 4.15Ω
THEVENIN’S EQUIVALENT:
Vo = 16X16.3/(4.15+16)
= 3V
Assignment No 5 Solution
Solution:
First step:
Removing load resistor R L = 1k from the circuit.
Now the circuit will adopt the following shape.
Second step: Calculating IN Now short circuiting the circuit to find the value of I N
R2 R3
3k 2k
R2
1.2k
Solution:
We want to calculate V by using Norton’s theorem.we will follow these four steps .
0
First step: Replacing R with a short circuit to find I Here Rl is 3kΩΩ
L N.
Second step:calculating IN
To calculate I We short circuit open terminal and find IN.
N
We apply super position method we will remove all circuits one by one i.e. after removing
voltage source we will replace it with short circuit and current source with open circuit.
Hint: Don’t remove all circuits simultaneously.
Only current source is acting.
Due to short circuit all current will follow through the short circuit so
I = 4mA --------------(A)
N1
Only voltage source is acting.
Fourth Step:
After calculating I and R , re-inserting the load resistance R in the circuit in parallel R and
N N L N
considering the I current source parallel with these two resistances. So our Norton
N
equivalent circuit will be.
Q # 3: Find the current I and the diode voltage V for the circuit in the fig. Assume
D D
that the diode has a current of 1.5mA mA at a voltage of 0.7V.
Solution:
Here VDD=10V, R=2KΩ
Diode voltage VD=0.7V
ID can be found as
ID = VDD – VD/R
= 10 – 0.7/2k
= 4.65mA
We know
V – V = nVTln(I /I )
2 1 2 1
x
log 10 = (ln x)/ (ln 10) where ln10 =2.3
so 2.3 log 10 x = ln x
Now the equation of log to the base 10 form will be as
V2 – V1 =2.3nVTlogI2/I1
For our case, 2.3 nV = 0.1volts
T
V2 = V1 + 0.1logI2/I1
As V1 =0.7V, I =1.5mA and I =4.65mA putting these values above
1 2
V = 0.753V
2
So our required values of ID and VD are
I =4.65mA and V =0.75 V
D D
Q # 4:
(a) What do you understand by P type and N type semiconductor? What happens to pn
junction when it is forward biased?
Ans:
P type is formed by doping trivalent element with silicon or germanium. Holes are majority in P type
means current flow due to holes. N type is formed by doping pentavalent element with silicon or
germanium. Electrons are majority carriers in N type means current flow due to electrons. The pn junction
is excited by a constant current source supplying a current I in forward direction. The depletion layer
narrows and barrier voltage decreases by V volts, which appears as an external voltage in the forward
direction.
This current causes majority carriers to be supplied to both sides of the junction by the external circuit.
Holes to the p material and electrons to the n material. These majority carriers will neutralize some of
the uncovered, causing less charge to be stored in the depletion region. Thus the depletion layer
narrows and the depletion barrier voltage reduces. This reduction in voltage cause more electrons to
move from n side to p side and more holes to move from p side to n side. So that diffusion currents
increases until equilibrium is achieved.
(b) Write the difference between characteristic of ideal diode model and practical diode
model.
Ans; The ideal diode behaves essentially as a switch:It is OFF means no current conducts
when reverse biased and ON when forward biased, it has no resistance when forward
biased,. The ideal diode characteristic is shown in Figure.
v-i characteristic for ideal diode model is shown below
Practically we see there is a voltage drop of about 0.7 V across the diode (silicon; germanium is 0.3
V) when it is forward biased, and so ofenly we include this voltage drop in circuit analysis.
Accordingly, the practical model is the ideal model with the addition of a voltage source in the
forward bias model.
Q # 1:
Find the change in currents due to change of voltage by (a) 5mv, (b) -10mv, (c) 15mv
using small signal model and exponential model of diode with n= 1 and biased at 2mA.
Solution:
For small signal model we have
∆v = r ∆i
d
∆i = ∆v / rd
But
r =nV /I
d T
=1 x 25m/2m
= 12.5ohms
∆i = ∆v / 12.5
Now from exponential model
v / nVT
i = Is e
Also we know that
∆v/nVT
I + ∆i = I e
D D
∆v/nVT
I + ∆i = I e
D D
∆v/nVT
∆i = I (e - 1)
D
but
I = 2mA thus
D
∆v/nVT
∆i = 2 (e -1)
For
(a) ∆v = 5mV
(1) ∆i = 5/12.5 = 0.4mA
5/25
(2) ∆i =2 (e – 1)
=0.44mA
(b) ∆v = -10mV
(1) ∆i =-10/12.5
= -0.8mA
(2) ∆i = 2(e-10/25 – 1)
= -0.65mA
(c)
∆v = 15mV
(1) ∆i = 15/12.5 = 1.2mA
15/25
(2) ∆i =2 (e – 1)
=1.64mA
Q#2
A step up transformer has the turn ratio of 2:5, find the secondary voltage of transformer
if primary voltage given is 240 Vac.
Solution:
Turn ratio of transformer is 2:5 which means
N1=2
N2=5
V1=240v
The turn ratio of the transformer is equal to the voltage ratio of the two components, so
that
V2 = (N2/N1) V1
= 5/2x(240Vac)
V = 600Vac
2
Q # 3:
Determine the dc load voltage and current values for the circuit shown in the figure
below also mention the units of each derived value.
SOLUTION:
The transformer has 20Vac input rated voltage, the peak secondary voltage is found
as
V2(pk) = 20/0.707
=28.28Vpk
Q # 4:
Find the waveform of output voltage VO for the following clipper circuit with given
signal waveform at input.
p
Solution:
During the positive half half cycle, D1 will conduct but D2 will act as an open circuit
means does not conduct current. But value of Vo cannot exceed 7v because point C and
D are electrically connected across 7v battery since D1 is shorted. Hence signal voltage
above +7v level would be clipped off as shown in fig below.
During the negative half half cycle ,D1 is open but D2 conduct current. But value of Vo
cannot exceed 5v because point C and D are electrically connected across 5v battery
since D2 is shorted. Hence signal voltage beyond 5v level would be clipped off as shown
in fig