Electrical Equivalent of Thermal Parameters:

Thermal problems can be solved by LTSpice, considering the following equivalences.

Electrcal
Resitance Capacitance Voltage

Unit
R, Ohm () C, Farad (F) V, Volt

Thermal
Thermal Resistance Thermal Capacitance Temperature

Unit
R ( 0C/W) C, (J/0C) T, (0C)

Let us consider that a MOSFET is driving a load (resistance, R) in linear mode, as shown in Fig.1. As the gate-source voltage (VGS) is increased, drain current (ID) increases. Power delivered to the load is ID x (24 VD) Watts or ID2 x R Watts . Power dissipated by the MOSFET is ID x VD Watts. Let us consider, R=5. For a range of ID, power dissipation in the load and the MOSFET is shown in Fig.2.

We can see, maximum power is dissipated by the MOSFET at, ID=2.4 A, PD(MAX)=28.8 W. A heat has to be used with the MOSFET to reduce the operating temperature, thereby ensuring the safety of the device.

VD

Fig.1

Fig.2 To dissipate the heat better produced in the device, thermal paste used in between the semiconductor device and the heat sink, as shown in Fig.3 and Fig.4

Fig.4 Fig.3

Junction to case thermal resistance (RJC) is given in the data sheet by the manufacturer. Thermal resistance of the thin layer of the paste applied in between the device and heat sink (RCS) is usually 0.2 0.25 0C/W. Thermal resistance of the heatsink (RSA) depends on the size, material and shape. Larger the surface area, lower the thermal resistance; that is why we see heat sinks with lots of fins. Thermal resistance value is given by the manufacturer, however the thermal capacitance is not seen in the data sheet. Though thermal capacitance does not need to be considered in most of the cases, however for short time operation or pulsed operation of a semiconductor this might be valuable. I hope to discuss, how to find out thermal resistance and capacitance values later. Knowing all the parameters, it comes to the analysis part. Let us consider the example of Fig.2. From the data sheet of the MOSFET, IRFP240, we can find the derating curve as shown in Fig.5. Analyzing the equivalent thermal circuit we should always operate the MOSFET under the junction temperature specified by the derating curve. Now let us draw the thermal equivalent circuit as shown in Fig. 6. Let us consider that the gate voltage is adjusted such that the MOSFET is dissipating 20 Watts of power (PD = 20W).

Fig.5

Fig.6 From the manufacturers data sheet, we can find the thermal resistance of IRFP240 (junction to case), RJC = 0.83 0C/W. Typically, thermal resistance of thin layer of thermal compound, RCS=0.24 0C/W. Let us take a heat sink, whose thermal resistance is, RSA= 3 0C/W. Considering thermal capacitance of the heatsink, CS = 1 J/ 0C. Drawing the schematic and putting the values in LTSpice as shown in Fig.7. We can go on to the next step to analyze.

Fig.7

Fig.8 Before pressing the run button, we have to set the time setting for the TRANSIENT analysis and put a initial condition. From the main menu, click simulation, then stop time> 50s>OK. To set the initial condition, click .op on the main menu, set the initial condition .IC V(N003)=25. It means that the initial temperature of the heatsink is 25 0C. Now click the RUN button. By placing the voltage probe on terminals TJ and TS, we can find the junction temperature of IRFP240 and the temperature of the heatsink. The results are shown in Fig.9.

Fig.9 From Fig.9 we see that temperature stabilizes within 30 seconds, junction and heatsink temperatures are, 106 0C, and 85 0C, respectively. From the derating curve of the device, it is seen that the maximum junction temperature should not exceed, 150 0C; now with the heatsink at 20W, it is below that range to operate safely. You can change the heatsink thermal resistance, and can see immediately, how the junction temperature varies