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2SD2017
IElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=300V VEB=20V IC=25mA VCE=2V, IC=2A IC=2A, IB=2mA IC=2A, IB=2mA VCE=12V, IE=1A VCB=10V, f=1MHz Ratings 100max 10max 250min 2000min 1.5max 2.0max 20typ 65typ V V MHz pF
13.0min
Equivalent circuit
B
( 4k )
Silicon NPN Triple Diffused Planar Transistor IAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 300 250 20 6 1 35(Tc=25C) 150 55 to +150 Unit V V V A A W C C
Application : Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25C) Unit
A
V
16.90.3 8.40.2
mA
1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2
2.54
3.9 B C E
I C V CE Characteristics (Typical)
0m A
6
4
m 20
8m
A
4m A
2mA
4
1mA
p) (Ca se Tem C
0.2
0.80.2
a b
3.30.2
I C =8A
1
I C =3A
I C =1A
1
25C
(Cas
I B = 0 .4
mA
0 0.2 0.5
10
50 100
500 1000
30C
125
h FE I C Characteristics (Typical)
(V C E =2V) 10000 5000 DC Curr ent Gain h F E
j- a ( C/W)
j-a t Characteristics
5
Typ
25
1000 500
1000 500
0C
125
100 50 30 0.03
100 50 30 0.03
0.5 0.3
0.1
0.5
5 6
0.1
10
50 Time t(ms)
100
500 1000
f T I E Characteristics (Typical)
(V C E =12V) 30 20 10
P c T a Derating
Natural Cooling Silicone Grease Heatsink: Aluminum in mm
Typ
Cut- off F req uency f T ( MH Z ) Collector Curr ent I C (A)
D.
(T
20
C=
25
C)
10
30
1m s
W ith
1 0.5
20
In fin ite he
at si
10
nk
0.5
5 6
10
50
100
300
2 0
25
50
75
100
125
150
143