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Vishay Siliconix
FEATURES
rDS(on) (W)
0.021 @ VGS = 10 V 0.0325 @ VGS = 4.5 V 0.020 @ VGS = 10 V 0.0265 @ VGS = 4.5 V
ID (A)
7.0 5.6 7.4 6.4
D LITTLE FOOTr Plus Integrated Schottky D Alternative Pinning for Additional Layout Options D 100% Rg Tested
APPLICATIONS
D DC/DC Converters Notebook
D1
IF (A)
2.0
SO-8
D1 D1 G2 S2 1 2 3 4 Top View Ordering Information: Si4814DY Si4814DY-T1 (with Tape and Reel) 8 7 6 5 G1 S1/D2 S1/D2 S1/D2
G2 N-Channel 2 MOSFET S2
Schottky Diode
Channel-2 10 secs
30 20
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
Steady State
Unit
V
Channel-2 Typ
47 85 28
Symbol
RthJA RthJF
Typ
52 90 30
Max
65 112 38
Max
60 107 35
Unit
_C/W
Si4814DY
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) GS( h) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, V VGS = 20 V VDS = 30 V, V VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, V VGS = 0 V, V TJ = 85_C On State Drain Currentb On-State ID(on) D( ) VDS = 5 V, V VGS = 10 V VGS = 10 V, ID = 7.0 A Drain Source On-State Drain-Source On State Resistanceb rDS(on) DS( ) VGS = 10 V, ID = 7.4 A VGS = 4.5 V, ID = 5.6 A VGS = 4.5 V, ID = 6.4 A Forward Transconductanceb Diode Forward Voltageb gfs f VSD VDS = 15 V, ID = 7.0 A VDS = 15 V, ID = 7.4 A IS = 1.7 A, VGS = 0 V IS = 1 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 20 0.0175 0.0165 0.027 0.022 17 20 0.7 0.47 1.1 0.5 0.021 0.020 0.0325 0.0265 S V W 0.8 0.8 100 100 1 100 15 2000 A mA V nA
Symbol
Test Condition
Min
Typa
Max
Unit
Dynamica
Total Gate Charge Gate Source Charge Gate-Source Gate Drain Charge Gate-Drain Gate Resistance Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source Drain Reverse Recovery Time Source-Drain Qg Qgs Qgd d Rg td(on) d( ) tr td(off) d( ff) tf trr IF = 1.3 A, di/dt = 100 A/ms IF = 2.2 A, di/dt = 100 mA/ms Channel-1 Channel 1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel 2 Channel-2 VDD = 1 15 V V, RL = 1 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-1 Channel-1 VDS = 15 V, VGS = 5 V, ID = 7.0 A Channel 2 Channel-2 VDS = 15 1 V, V VGS = 5 V V, ID = 7.4 A Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 0.5 0.5 6.5 9.7 1.5 2.6 2.7 3.8 1.6 1.8 12 13 13 13 22 29 8 12 50 46 2.6 3.1 20 20 20 20 35 45 15 20 80 80 ns W 10 15 nC
Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Symbol
VF
Test Condition
IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = 30 V, TJ = 125_C Vr = 10 V
Min
Typ
0.47 0.36 0.004 0.7 3.0 50
Max
0.50 0.42 0.100 10 20
Unit
V
Irm CT
mA pF
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40 VGS = 10 thru 5 V 40
CHANNEL-1
Transfer Characteristics
32
24
16 3V 8
Capacitance
DS(on) On-Resistance ( W )
C Capacitance (pF)
0.04
600
450
0.02
300 Crss
Coss
0.01
150
Gate Charge
5 V GS Gate-to-Source Voltage (V) VDS = 15 V ID = 7 A 4 1.8 1.6 1.4 1.2 1.0 0.8 0.6 50
0 0.0
1.5
3.0
4.5
6.0
7.5
25
25
50
75
100
125
150
Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50 0.10
CHANNEL-1
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10 TJ = 25_C
DS(on) On-Resistance ( W )
0.08
0.06
0.04 ID = 7 A 0.02
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V)
Threshold Voltage
120 0.4 100 V GS(th) Variance (V) 0.2 0.0 0.2 0.4 0.6 0.8 50 ID = 250 mA Power (W) 80 60 40 20
0 25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ Temperature (_C)
100
10 I D Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS Drain-to-Source Voltage (V) 1s 10 s dc
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Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
CHANNEL-1
2 1
t2 1. Duty Cycle, D =
t1 t2
Single Pulse 0.01 104 103 102 1 Square Wave Pulse Duration (sec) 101 10
100
600
2 1
Single Pulse 0.01 104 103 102 101 Square Wave Pulse Duration (sec) 1 10
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Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
CHANNEL-2
40
Output Characteristics
VGS = 10 thru 4 V
Transfer Characteristics
32
24
24
16
3V
0.05
1500
Capacitance
r DS(on) On-Resistance ( W )
1200 Ciss
900
600
Coss
0.01
300
Crss
Gate Charge
25
25
50
75
100
125
150
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Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
50 0.10
CHANNEL-2
On-Resistance vs. Gate-to-Source Voltage
TJ = 150_C 10
DS(on) On-Resistance ( W )
0.08
0.06
TJ = 25_C
1 0.0
0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V)
30 V 24 V
14 15
Power (W)
0 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 100 1 10 TJ Temperature (_C)
10 I D Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 0.1 TC = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS Drain-to-Source Voltage (V) 1s 10 s dc
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Si4814DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02
CHANNEL-2
Notes: PDM t1
t2 1. Duty Cycle, D =
t1 t2
10
100
600
2 1
0.01 104
Single Pulse 103 102 101 Square Wave Pulse Duration (sec) 1 10
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