Weekly Report

14 May, 2013.

 Flicker noise -> 1/f Resistors and bulk materials strictly 1/f -> HEMTs 0.7< < 1.3 experimentally (for GaN 1< < 1.3 ) G-R implies trap related capture and emission of carriers. Spectrum given by =< 4 2 > 1+22 ; = trap lifetime ; = angular frequency and X= fluctuating quantity, usually charge or mobility.
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From Noise of AlGaN/GaN HEMTs and Oscillators by Christopher Sanabria

 Empirical relationship proposed by Hooge A unified Model for Flicker Noise in Metal-Oxide-Semiconductor field Effect Transistors by Kwok K. Hung, Ping K. Ko, Chenming Hu and Yiu C. Cheng.

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