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RD15HVF1
DRAWING
9.1+/-0.7 1.3+/-0.4 3.6+/-0.2
DESCRIPTION
RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions.
OUTLINE
3.2+/-0.4
12.3MIN
High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band
4.8MAX
9+/-0.4
FEATURES
12.3+/-0.6
1.2+/-0.4 0.8+0.10/-0.15
1 2 3
APPLICATION
3.1+/-0.6
5deg
4.5+/-0.5
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
RoHS COMPLIANT
9.5MAX
note: RD15HVF1-101 is a RoHS compliant products. Torelance of no designation means typical value. RoHS compliance is indicate by the letter G after the lot Dimension in mm. marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD15HVF1
7 Mar 2008
RD15HVF1
UNIT V V W
W A C C C/W
Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 6W
No destroy
Note : Above parameters , ratings , limits and conditions are subject to change.
RD15HVF1
7 Mar 2008
RD15HVF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
Ids(A)
60
4 6 Vgs(V)
10
Vds-Ids CHARACTERISTICS 10
Ta=+25C
8 6 4 2 0 0 2 4 6 Vds(V) 8 10
60 Ciss(pF) 40 20 0 0 5 10 Vds(V) 15 20
Ids(A)
Vgs=4V Vgs=3V
RD15HVF1
7 Mar 2008
RD15HVF1
Pin-Po CHARACTERISTICS 25
Po
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 50 40 30
Gp Ta=+25C f=175MHz Vdd=12.5V Idq=0.5A
100
Po
100 80
d
80 Pout(W) , Idd(A) 60 40 20
20 15 10 5 0 0.0
Ta=25C f=175MHz Vdd=12.5V Idq=0.5A Idd
d(%)
20 10 0 0 10 20 Pin(dBm) 30
40 20 0
0.5 Pin(W)
1.0
1.5
Pin-Po CHARACTERISTICS 50 40 30 20
Gp Ta=+25C f=520MHz Vdd=12.5V Idq=0.5A
100 80 60
Po Ta=25C f=520MHz Vdd=12.5V Idq=0.5A
Po
80 60 40 20
Pout(W) , Idd(A)
d(%)
10 5 0 0 1 2 3 Pin(W) 4
40 20 0
10 0 0 10 20 Pin(dBm) 30 40
Idd
Vdd-Po CHARACTERISTICS 25 20 15
Idd Ta=25C f=175MHz Pin=0.6W Idq=0.5A Zg=ZI=50 ohm Po
Vdd-Po CHARACTERISTICS 5 4 3 2 1 0 25 20 15
Idd Ta=25C f=520MHz Pin=3W Idq=0.5A Zg=ZI=50 ohm
5 4 3 2 1 0 4 6 8 10 Vdd(V) 12 14
Po
Idd(A)
Po(W)
10 5 0 4 6 8 10 Vdd(V) 12 14
Po(W)
10 5 0
RD15HVF1
7 Mar 2008
Idd(A)
d(%)
15
d(%)
60
RD15HVF1
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2 10 8 6
+75C Vds=10V Tc=-25~+75C -25C +25C
Ids(A)
4 2 0 0 2 4 6 Vgs(V) 8 10
TEST CIRCUIT(f=175MHz)
Vgg C1 Vdd
9.1kOHM L3
C3
8.2kOHM
10pF 25pF 25pF 7 12 40 42 74 95 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm
C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD15HVF1
7 Mar 2008
RD15HVF1
Vdd
TEST CIRCUIT(f=520MHz)
Vgg C1 9.1kOHM L3
C3
8.2kOHM
RF-IN 56pF
7 90 100
7 90 100
C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD15HVF1
7 Mar 2008
RD15HVF1
f=520MHz Zout
f=520MHz Zin
f=175MHz Zout
Zo=50ohm
f=175MHz Zin
Zin (ohm)
2.34-j8.01 5.42+j9.22
Zout (ohm)
3.06+j0.74 6.02+j12.34
RD15HVF1
7 Mar 2008
RD15HVF1
S12 S22 (ang) 26.0 27.7 36.1 41.8 48.1 57.7 65.3 70.3 73.5 74.6 73.9 73.9 72.6 62.8 59.6 57.8 54.8 51.4 49.4 (mag) 0.556 0.547 0.560 0.571 0.588 0.625 0.647 0.683 0.716 0.734 0.765 0.777 0.788 0.859 0.870 0.877 0.880 0.886 0.892 (ang) -130.2 -150.4 -157.8 -160.1 -161.8 -164.3 -167.5 -170.9 -173.7 -176.8 179.4 178.0 176.3 159.0 155.7 152.4 149.0 145.7 142.1 (mag) 0.023 0.024 0.025 0.025 0.026 0.030 0.036 0.044 0.053 0.062 0.072 0.076 0.082 0.135 0.143 0.153 0.163 0.170 0.178
RD15HVF1
7 Mar 2008
RD15HVF1
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD15HVF1
7 Mar 2008