EE 331 Devices and circuits I

Field-Effect Transistor
(continue)

Lecture 8
Step 3: Solve the circuit
Not valid
Change the assumption
10A
Condition must be hold
And v
GS

5V
50k
10V
5V
50k
10V
5V
50k
10V
Solve the circuit:
14
14 k
5V
50k
10V
18k 1V
Solve the circuit:
V
DS
< V
GS
V
TN
= 2V

Guess ON and triode
14 k
Constant gate-voltage bias using a
voltage divider
Given
V
GG
is used to establish a fixed gate-source bias
V
DD
supplies drain current
Constant gate-voltage bias using a
voltage divider
Constant gate-voltage bias using a
voltage divider
Loop containing V
DS
Loop containing V
GS

Constant gate-voltage bias using a
voltage divider
Find the Q-point graphically
with a load-line method
The load line equation
Find the Q-point graphically
with a load-line method
The load line
equation
Bias circuit for a depletion-mode
MOSFET device
Given
Find the value of R
S

required to achieve
I
DS
= 100 A
Problem
Bias circuit for a depletion-mode MOSFET device
Depletion-mode transistor
conducts with V
GS
= 0

Separate gate-bias voltage
is not required.
Bias circuit for a depletion-mode
MOSFET device
Determine the value of
V
GS
needed to establish the
design value of I
DS
.

Assuming saturation
region operation
Bias circuit for a depletion-mode
MOSFET device
Gate current is zero
The input-loop
equation yields:
V
GS
- V
TN
= -2 V - (-3 V) = +1 V.
Determine the Q-point when the substrate is
connected
Given
Determine the Q-point when the substrate is connected
Must solve the
following set of three
equations:
Find the Q-point by iteration using the
computer with a spreadsheet
Iterative solution:
1. Estimate I
DS
.

2. Calculate V
GS
and V
SB
.

3. Calculate V
TN
.
4. Calculate I
DS
using step 2 and step 3,
compare to estimated I
DS
.

5. If the calculated I
DS
estimated I
DS
, then go
back to step 1.
Find the Q-point by iteration using the
computer with a spreadsheet
Drain current decreases
approximately 26 percent.
Threshold voltage
Increases from -3 V to -2.33 V