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EB-PVD technology uses an electron beam heated to 2000°C to melt and vaporize materials, which are then deposited as a coating on a substrate. A key development was a new EB-PVD method invented in the 1990s which decreased the cost of producing thermal barrier coatings. EB-PVD allows for precise control over the deposition process and rate, and results in very smooth coatings that strongly adhere to the substrate.
EB-PVD technology uses an electron beam heated to 2000°C to melt and vaporize materials, which are then deposited as a coating on a substrate. A key development was a new EB-PVD method invented in the 1990s which decreased the cost of producing thermal barrier coatings. EB-PVD allows for precise control over the deposition process and rate, and results in very smooth coatings that strongly adhere to the substrate.
EB-PVD technology uses an electron beam heated to 2000°C to melt and vaporize materials, which are then deposited as a coating on a substrate. A key development was a new EB-PVD method invented in the 1990s which decreased the cost of producing thermal barrier coatings. EB-PVD allows for precise control over the deposition process and rate, and results in very smooth coatings that strongly adhere to the substrate.
Since the 1980s, EBPVD has been investigated for preparation of TBCs. A signifi cant development in the 1990s was the invention by Paton Electric Institute of Welding in Ukraine of a new EBPVD technology which decreased the preparation cost of EBPVD TBCs. This technology has been widely applied in the production of TBCs. The electron beam has a very important role as the thermal source of EBPVD technology. EBPVD is capable of depositing any type of material. The deposition mechanism consists of an electron beam formed at 2000 C in an electron gun (either a Pierce gun or an electromagnetism defl exion gun), followed by acceleration of thermal electrons under high voltage. When the high-speed electrons hit materials in the ingot, energy is generated suffi cient to melt and convert material into vapor and then deposit it onto the substrate. Compared to other preparation methods, this method has a higher deposition rate. Moreover, deposition parameters can be easily controlled and the surface is very smooth with a Ra surface value of about 12 m. There is a strong adhesion between the substrate and coatings after deposition by EBPVD. Process parameters are easily modifi ed and the deposition rate can be accurately controlled