2SB772PT

CHENMKO ENTERPRISE CO.,LTD

SMALL FLAT
PNP Epitaxial Transistor
VOLTAGE 30 Volts CURRENT 3 Ampere
APPLICATION
FEATURE
* Small flat package. (SC-62/SOT-89)
* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)
* High speed switching time: tstg= 1.0uSec (typ.)
CONSTRUCTION
* PNP Switching Transistor
* Power driver and Dc to DC convertor .
2003-8
* PC= 1.5 W (mounted on ceramic substrate).
* High saturation current capability.
CIRCUIT
MARKING
* hFE Classification Q: Q72
P: 772
E: E72
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
Dimensions in millimeters SC-62/SOT-89
SC-62/SOT-89
THERMAL CHARACTERISTICS ( At TA = 25
o
C unless otherwise noted )
NOTES :
CHARACTERISTICS CONDITION SYMBOL UNITS
357
o
C / W Thermal Resistance (Junction to Ambient) Note 1
MAXIMUM RATINGES ( At TA = 25
o
C unless otherwise noted )
RATINGS CONDITION
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Open Emitter
Open Base
Open Collector
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation TA 25
O
C; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
SYMBOL
VCBO
VCEO
VEBO
IBM
R JA
TAMB
TJ
TSTG
ICM
IC
MIN. MAX. UNITS
- -40
Volts
Volts
Volts
Amps
Amps
Amps
mW
o
C
o
C
o
C
- -30
- -5
- -3
- -3
- -0.5
- 1500
-55 +150
- +150
-55 +150
VALUE
PTOT
1. Transistor mounted on an FR4 printed-circuit board 1.6"X1.6"X0.06".
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
1.7MAX.
4.6MAX.
4
.
6
M
A
X
.
0.4+0.05
1.6MAX.
2
.
5
+
0
.
1
0
.
8
M
I
N
.
+0.08
0.45-0.05
+0.08
0.40-0.05
1.50+0.1
+0.08
0.40-0.05
1.50+0.1
3 2 1
E C B
1 2 3
1 Base
2 Collector ( Heat Sink )
3 Emitter
RATING CHARACTERISTIC CURVES ( 2SB772PT )
CHARACTERISTICS ( At TA = 25
o
C unless otherwise noted )
PARAMETERS CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IE=0; VCB=-30V
IC=0; VEB=-3V
VCE=-2V; Note 1
IC=-0.02A
IC=-1.0A; Note 2
Collector-Emitter Saturation Voltage IC=-2A; IB=-0.2A
Base-Emitter Saturatio Voltage IC=-2A; IB=-0.2A
IE=ie=0; VCB=-10V;
f=1MHz
IC=-0.1A; VCE=-5.0V;
f=100MHz
Collector Capacitance
Transition Frequency
SYMBOL
ICBO
IEBO
hFE
CC
fT
VBEsat
VCEsat
MIN. MAX. TYPE UNITS
- -1.0
uA
uA

Volts
Volts
pF
MHz
-
- -1.0 -
30
100
-
500
-
160
- -0.5 -0.3
- -2.0 -1.0
- - 55
100 - -
SWITCHING TIMES ( Between 10% and 90% levels )
PARAMETERS CONDITION
Turn-on Time
-IB1=IB2=0.05A
Duty cycle<1%
Storage Time
Fall Time
SYMBOL
ton
tf
ts
MIN. MAX. TYPE UNITS
- - uSec
uSec
uSec
0.1
- - 1.0
- - 0.1
Note :
1. Pulse test: tp 300uSec; 0.02.
2. hFE(2) Classification Q: 100 to 200, P: 160 to 320, E: 250 to 500.
IB1
IB2
-30V
OUTPUT
INPUT
3
0
o
h
m
S
20uSec
IB1
IB2
RATING CHARACTERISTIC CURVES ( 2SB772PT )
Typical Electrical Characteristics
-0.1 -0.3 -1.0 -3.0 -10 -30 -100
1
10
100
3000
1000
COLLECTOR-BASE REVERSE BIAS VOLTAGE VCB (V)
C
O
L
L
E
C
T
O
R

C
A
P
A
C
I
T
A
N
C
E

C
C

(
p
F
)
Figure 1. CC - Reverse VCB
-1 -10 -100 -1000
1
10
100
3000
1000
COLLECTOR CURRENT IC (mA)
C
U
T
O
F
F

F
R
E
Q
U
E
N
C
Y

(
M
H
z
)
Figure 2. Cutoff Frequency - IC
VCE=-5V
-10 -30 -100 -300 -1000 -3000
-0.1
-0.3
-0.5
-1
-3
-5
-10
COLLECTOR CURRENT IC (mA)
B
A
S
E
-
E
M
I
T
T
E
R

S
A
T
U
R
A
T
I
O
N

V
O
L
T
A
G
E
V
B
E
(
s
a
t)
(
V
)
Figure 6. VBE(sat) - IC
COMMON EMITTER
IC/IB=10
-10 -30 -100 -300 -1000 -3000
-0.01
-0.03
-0.05
-0.1
-0.3
-0.5
-1
COLLECTOR CURRENT IC (mA)
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R

S
A
T
U
R
A
T
I
O
N

V
O
L
T
A
G
E

V
C
E
(
s
a
t)

(
V
)
Figure 5. VCE(sat) - IC
COMMON EMITTER
IC/IB=10
-10 -30 -100 -300 -1000 -3000
10
30
50
100
300
500
1000
COLLECTOR CURRENT IC (mA)
D
C

C
U
R
R
E
N
T

G
A
I
N

h
F
E
Figure 3. hFE - IC
COMMON EMITTER
VCE=-2V
0 20
0. 2
0. 4
40
0. 6
0. 8
60
1. 0
80
1. 2
1. 4
1. 5
100 120 140 160
0
AMBIENT TEMPERATURE TA (
O
C)
C
O
L
L
E
C
T
O
R

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

P
C

(
W
)
Figure 4. PC - TA
(1) Mounted on ceramic substrate
( 250mm
2
x0.8t )
(2) No heat sink
(2)
(1)
RATING CHARACTERISTIC CURVES ( 2SB772PT )
Typical Electrical Characteristics
-0.1 -0.3 -1.0 -3.0 -10 -30 -100
-10
-30
-50
-100
-500
-300
-3000
-1000
-5000
-30000
-10000
COLLECTOR-EMITTER VOLTAGE VCE (V)
C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

I
C

(
m
A
)
Figure 9. Safe Operation Area
Single nonrepetitive pulse
TA=25
O
C
Curve must be derated linearly
with increase in temperature
Tested without a substrate
1S
100 mS
1 mS