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  • Eel732 HW Vi

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    amiglani
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    The document provides the model for the diffusion capacitance of a forward biased PN junction. When p-type and n-type materials meet, majority carriers diffuse across the junction, becoming minority carriers. These injected carriers accumulate at the edges of the depletion region and cause a diffusion capacitance under forward bias. The diffusion capacitance due to electrons in the p-region is given by an expression relating a change in negative charge to a change in forward bias. Similar expressions can be developed for holes in the n-region. The total diffusion capacitance is the sum of these and increases with forward bias current as more carriers are injected.

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    Eel732 Hw Vi

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    Eel732 Hw Vi

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    The document provides the model for the diffusion capacitance of a forward biased PN junction. When p-type and n-type materials meet, majority carriers diffuse across the junction, becoming minority carriers. These injected carriers accumulate at the edges of the depletion region and cause a diffusion capacitance under forward bias. The diffusion capacitance due to electrons in the p-region is given by an expression relating a change in negative charge to a change in forward bias. Similar expressions can be developed for holes in the n-region. The total diffusion capacitance is the sum of these and increases with forward bias current as more carriers are injected.

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    3 просмотров1 страница

    Eel732 HW Vi

    Загружено:

    amiglani
    The document provides the model for the diffusion capacitance of a forward biased PN junction. When p-type and n-type materials meet, majority carriers diffuse across the junction, becoming minority carriers. These injected carriers accumulate at the edges of the depletion region and cause a diffusion capacitance under forward bias. The diffusion capacitance due to electrons in the p-region is given by an expression relating a change in negative charge to a change in forward bias. Similar expressions can be developed for holes in the n-region. The total diffusion capacitance is the sum of these and increases with forward bias current as more carriers are injected.

    Авторское право:

    © All Rights Reserved
    Скачайте в формате PDF, TXT или читайте онлайн в Scribd
    Отметить как неприемлемый контент
    из 1

    Home Assignment - VI (EEL732)

    Adersh Miglani
    Adersh.Miglani@gmail.com
    11-Sep-2013
    Assignment: Find the model for the diffusion capacitance
    of forward bias PN junction.
    Solution: When p-type and n-type semiconductor materials
    are brought together, majority charge carriers diffuse across
    the metallurgical junction. The diffused carriers are termed
    as minority carriers or injected carriers in the other region.
    These charge carriers leave uncovered impurity atoms which
    create depletion region. Under thermal equilibrium, no mobile
    charge carriers are present in the depletion region and diffusion
    of majority carriers is opposed by build-in potential barrier
    created due to the induced electric eld in the depletion region.
    These injection carriers, stored at the edges of depletion
    region, cause diffusion capacitance which dominates under
    forward bias condition. The diffusion capacitance due to
    electrons in the p-side is given by the following expression
    C
    dn
    =
    dQ
    n
    dV
    where dQ
    n
    is a change in the negative charge due of dV , a
    change in the forward bias.
    Say
    n
    is the minority carrier electron lifetime and r
    dn
    is
    the incremental resistance.
    r
    dn
    =
    dV
    dI
    dn
    The expression for C
    dn
    is reduced to
    C
    dn
    =
    n
    dQ
    n

    n
    dV
    =
    n
    dI
    dn
    dV
    =

    n
    r
    dn
    Similar expression can be developed for the holes available in
    n-side
    C
    dp
    =

    p
    r
    dp
    Total diffusion capacitance under forward bias is
    C = C
    dn
    +C
    dp
    =

    n
    r
    dn
    +

    p
    r
    dp
    Answer
    The diffusion capacitance increases with the increase in for-
    ward bias current. Larger forward bias current results in the
    net increase in the injected charge carriers outside of depletion
    region.

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