APPENDIX

DATASHEET

Operational Amplifier

MAX 623
MAX 9943
MAX 933
MAX 4172

CAPACITOR

DIODE

IN914

ZENER DIODE

IN5817

POWER MOSFET

Si9434DY

TRANSISTOR

2N3906
2N3904

RESISTOR

BATTERY

OPERATIONAL AMPLIFIER
1) MAX4172

Fig 1 : MAX 7142 CIRCUIT DIAGRAM

Absolute Maximum Rating :
V+, RS+, RS-, PG ...................................................-0.3V to +36V
OUT ..............................................................-0.3V to (V+ + 0.3V)
Differential Input Voltage, VRS+ - VRS-............................700mV
Current into Any Pin..........................................................50mA
Continuous Power Dissipation (TA = +70C)
SO (derate 5.88mW/C above +70C)..........................471mW
MAX (derate 4.10mW/C above +70C) .....................330mW
Operating Temperature Range
MAX4172E_A....................................................-40C to +85C
Storage Temperature Range .............................-65C to +150C
Lead Temperature (soldering, 10s) .................................+300C
Soldering Temperature (reflow) .......................................+260C

 ELECTRICAL CHARATERISTICS
PARAMETERS

CONDITION

MIN

TYP

MAX

UNIT

32

32

Operating voltage
range(V+)
Input voltage
range(Vrs+)
Supply current(Iv+)

Iout =0mA

0.8

1.6

mA

Input offset voltage

V+ =12V, Vrs+=12V

0.1

0.75

mV

Vrs+ 2.0V
Vrs+ > 2.0V, Iout=0mA

4
27

42.5

42.5

Positive input bias

current

Vrs+ 2.0V, Iout=0mA

-3650
Negative input bias

Maximum output
voltage
Maximum Vsense
voltage
Bandwidth

Vrs+ > 2.0V

27

85

Vrs+ 2.0V
Iout 1.5mA

-325

85
V+-1.2

A
V

150

175

mV

Vsense=100mV

800

kHz

Vsense=6.25mV

200
1.75

mA

Maximum output
current
PG Output Low Voltage ISINK = 1.2mA, V+ =
2.9V, TA = +25C
Power-Off Input
V+ = 0V,
Leakage Current(RS+,
VRS+= VRS-= 32V
RS-)
OUT Rise Time
VSENSE = 0mV to
100mV,10% to 90%
OUT Fall Time
VSENSE = 100mV to
0mV,90% to 10%
OUT Output Resistance VSENSE = 150mV

1.5

0.1

0.4

400

ns

600

ns

20

2) MAX 933
ABSOLUTE MAXIMUM RATINGS:
Supply Voltage (VCC to VEE) ...................................................6V
IN_-, IN_+ to VEE .......................................-0.3V to (VCC + 0.3V) OUT_ to VEE
MAX985/MAX989/MAX993 ....................-0.3V to (VCC + 0.3V)
MAX986/MAX990/MAX994.....................................-0.3V to 6V
OUT_ Short-Circuit Duration to VEE or VCC ...........................10s
Continuous Power Dissipation (TA = +70C)
5-Pin SC70 (derate 3.1mW/C above +70C)...............247mW
5-Pin SOT23 (derate 7.10mW/C above +70C)...........571mW
6-Bump UCSP (derate 3.9mW/C above +70C)..........308mW
8-Pin SOT23 (derate 9.1mW/C above +70C).............727mW
8-Pin MAX (derate 4.5mW/C above +70C) ..............362mW
8-Pin SO (derate 5.88mW/C above +70C).................471mW
14-Pin TSSOP (derate 9.1mW/C above +70C) ..........727mW
14-Pin SO (derate 8.33mW/C above +70C)...............667mW
Operating Temperature Range ...........................-40C to +85C
Junction Temperature......................................................+150C
Storage Temperature Range .............................-65C to +150C
Lead Temperature (soldering, 10s) .................................+300C
Bump Reflow Temperature (Note 1) ................................+235C

 ELECTRICAL CHARACTERISTICS

VCC = 2.7V to 5.5V, VEE = 0V, VCM = 0V, TA = -40C to +85C, unless otherwise noted.
Typical values are at TA = +25C.)
PARAMETERS

CONDITION

Supply Voltage Inferred from

PSRR test
Power-Supply
2.5V VCC
Rejection Ratio
5.5V
Supply Current VCC = 5V
per
TA = +25C
Comparator TA =40Cto+85C

MIN

TYP

2.5
55

MAX

UNITS

5.5

80

12

dB

20
24
A

VCC = 2.7V
TA = +25C
TA =40Cto+85C
Common
Mode Voltage
Range (

TA = +25C

11

20
24

VEE
0.25

VCC +
0.25

10

nA

TA = -40C to
+85C

Input Bias
Current
Input Offset
Current
Input
Capacitance
CommonMode
Rejection Ratio
Output Short- Sourcing or
Circuit Current sinking
VOUT = VEE
orVCC
VCC = 5V
VCC = 2.7V

0.001
0.5
1.0
52

80

dB

96
35

mA

3) MAX9943
Supply Voltage (VCC to VEE) ........................................-0.3V to +40V
All Other Pins ......................(VEE - 0.3V) to (VCC + 0.3V)
OUT Short-Circuit Current Duration
8-Pin MAX (VCC - VEE 2.............................................3s
8-Pin MAX (VCC - VEE > 20V) .......................................Momentary
6-Pin TDFN (VCC - VEE 20V).............................................60s
6-Pin TDFN (VCC - VEE > 20V)...............................................2s
8-Pin SO (VCC - VEE 20V) .................................................60s
8-Pin SO (VCC - VEE > 20V)...................................................2s
8-Pin TDFN (VCC - VEE 20V).............................................60s
8-Pin TDFN (VCC - VEE > 20V)...............................................2s
Continuous Input Current (Any Pins) ................................20mA
Thermal Limits
Multiple Layer PCB
Continuous Power Dissipation (TA = +70C)
8-Pin MAX (derate 4.8mW/C above +70C) .............387.8mW
6-Pin TDFN-EP (derate 23.8mW/C above +70C)1904.8mW
8-Pin SO (derate 7.6mW/C above +70C)....................606.1W
8-Pin TDFN-EP (derate 24.4mW/C above +70C)...1951.2mW
Operating Temperature Range ...................................-40C to +125C
Junction Temperature......................................................+150C
Lead Temperature (soldering, 10s) .................................+300C
Soldering Temperature (reflow) .......................................+260C

 ELECTRICAL CHARACTERISTICS

PARAMETERS

CONDITION

MIN

Guaranteed by
PSRR test

TYP

MAX

UNITS

19

DC
CHARACTERISTICS

Operating
Supply Voltage
Range
Quiescent
Supply Current
per Amplifier
Input Offset
Voltage

Input Bias
Current

Input Offset
Current
Input Voltage
Range
Open-Loop
Gain

550

TA = +25C
Input Offset
Voltage VOS
TA = -40C to
+125C
VEE + 0.3V VCM
VCC - 1.8V
Input Bias Current
IBIAS
VEE VCM VCC 1.8V
VEE VCM VCC 1.8V
Guaranteed
by CMRR test,
TA = -40Cto+125C
-13.5V VO
+13.5V, RL = 10k,
TA = +25C

20

950

100
V
240

1
VEE

115

20
90

nA

10

nA

VCC 1.8

130

dB
-13.5V VO
+13.5V, RL = 10k,
TA = -40Cto+125C

100

AC
CHARACTERISTICS

GainBandwidth
Product
Slew Rate
-5V VOUT +5V
Capacitive
No sustained
Loading
oscillation

2.4

MHz

0.35
1000

V/s
pF

4) MAX 623
Absolute Maximum Ratings
Vcc..+17V
Vout.+30V
Iout.25mA
Continuous total power dissipation(TA=+70C)
8-Pin Plastic DIP (derate 6.9mW/C above +70C) .............552mW
8-Pin SO (derate 5.88mW/C above +70C) .......................471mW
16-Pin Plastic DIP (derate 7.41mW/C above +70C) ...........593mW
Operating Temperature Range
MAX62_C.0C to +70C
MAX62_E.-40C to +85C
Storage temperature range-65C to +160C
Lead Temperature (soldering 10 secs)+300C

 ELECTRICAL CHARACTERISTICS
Vcc=+5V, TA= TMIN to TMAX
PARAMETERS

CONDITIONS

MIN

TYP

MAX

UNITS

High Slide
Voltage

IOUT=0,VCC=3.5V
IOUT=0,VCC=4.5V
IOUT=0,VCC=16.5

11.5
14.5
26.5
3.5

12.5
15.5
27.5

16.5
17.5
29.5
16.5

IOUT=0

12

13.5

14.5

ISOURCE=100A

3.8

4.3

0.4

Supply Voltage
Power Ready
Threshold
Power Ready
Output High
Power Ready
Output Low
Output Voltage
Ripple
Quiescent
Supply Current

Switching
Frequency

ISINK=1mA
IOUT=500A

100

IOUT=0,VCC=5V
TA=+25C

70

500

IOUT=0,VCC=16.5V
TA=+25C

70

350

90

mV
A

kHz

TRANSISTOR
1) 2N3906(PNP Silicon)
MAXIMUM RATINGS

RATING

SYMBOL

VALUE

UNIT

Collector-Emitter
Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Continuous
Total Device Dissipation
@ TA = 25C
Derate above 25C
Operating and Storage
Junction
Temperature Range

VCEO

40

Vdc

VCBO
VEBO
IC

40
5.0
200

Vdc
Vdc
mAdc

PD

625
5.0

mW
mW/C

TJ, Tstg

55 to +150

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, RJA
JunctiontoAmbient
Thermal Resistance,
JunctiontoCase

Symbol

RJC

Max

Unit

200

C/W

83.3

C/W

ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
OFF CHARACTERISTICS

SYMBOL

MIN

MAX

UNIT

CollectorEmitter
Breakdown Voltage (Note
2) (IC = 1.0 mAdc, IB = 0)
CollectorBase Breakdown
Voltage (IC = 10 _Adc, IE =
0)
EmitterBase Breakdown
Voltage (IE = 10 _Adc, IC =
0)
Base Cutoff Current (VCE =
30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0
Vdc)

V(BR)CEO

40

Vdc

V(BR)CBO

40

Vdc

V(BR)EBO

5.0

Vdc

IBL

50

nAdc

ICEX

50

nAdc

ON CHARACTERISTICS
DC Current Gain
(IC = 0.1mAdc, VCE = 1.0
Vdc)
hFE
(IC = 1.0 mAdc, VCE = 1.0
Vdc)
(IC = 10 mAdc, VCE = 1.0
Vdc)
CollectorEmitter
Saturation Voltage
(IC = 10 mAdc, IB = 1.0
VCE (sat)
mAdc)
(IC = 50 mAdc, IB = 5.0
mAdc
BaseEmitter Saturation
Voltage
(IC = 10 mAdc, IB = 1.0
mAdc)
(IC = 50 mAdc, IB = 5.0
mAdc)

60

80

100

300

0.25

0.4

Vdc

VBE(sat)
0.65

0.85

0.95

Vdc

SWITCHING CHARACTERISTICS
PARAMETERS

CONDITION

MIN

MAX

Delay Time

(VCC = 3.0 Vdc, VBE = 0.5

Vdc, IC = 10 mAdc, IB1 = 1.0
mAdc

35

Rise Time
Storage Time

-Do-

35

ns

(VCC = 3.0 Vdc, IC = 10

mAdc, IB1 = IB2 = 1.0 mAdc
(VCC = 3.0 Vdc, IC = 10
mAdc, IB1 = IB2 = 1.0 mAdc)

225

ns

75

ns

Fall Time

UNITS
ns

SMALLSIGNAL CHARACTERISTICS
PARAMETERS

SYMBOL

MIN

MAX

UNIT

CurrentGain Bandwidth
Product (IC = 10 mAdc, VCE =
20 Vdc, f = 100 MHz)
Output Capacitance (VCB =
5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5
Vdc, IC = 0, f = 1.0 MHz)
Input Impedance (IC = 1.0
mAdc, VCE = 10 Vdc, f = 1.0
kHz)
Voltage Feedback Ratio (IC =
1.0 mAdc, VCE = 10 Vdc, f =
1.0 kHz)
SmallSignal Current Gain (IC
= 1.0 mAdc, VCE = 10 Vdc, f =
1.0 kHz)

fT

250

MHz

Cobo

4.5

pF

Cibo

10

pF

hie

2.0

12

hre

0.1

10

X 104

hfe

100

400

2) 2N3904(NPN)
ELECTRICAL CHARACTERISTICS
PARAMETER

SYMBOL CONDITION

collector cutoff current

emitter cutoff current
DC current
gain

ICBO

collectoremitter
saturation
voltage
base-emitter
saturation
voltage
collector
capacitance

MAX

UNIT

IE = 0; VCB = 30 V

50

nA

IEBO

IC = 0; VEB = 6 V

50

nA

hFE

VCE = 1 V;
IC = 0.1 Ma
IC = 1 mA
IC = 10 mA
IC = 10 mA; IB = 1
mA;
IC = 50 mA; IB = 5
mA;
IC = 10 mA; IB = 1 mA
IC = 50 mA; IB = 5 mA

300
200

mV

VCEsat

VBEsat

Cc

IE = ie = 0; VCB = 5 V;
f = 1 MHz

MIN

60
80
100

200
850

mV

950
4

pF