Lecture #3, J anuary 13

th
, 2014
Homework #1 due on Wednesday Homework #1 due on Wednesday.
Concluding comments on Chapter 1
CMOS device CMOS device
f
T
Short Channel Effects
Ch t 3 Si l Si l t i t fi ti Chapter 3, Simple Single transistor configurations
Common Emitter / Source
Common Collector / Drain Common Collector / Drain
Common Base / Gate
Deep Submicron CMOS & Velocity Saturation
y
V
sat
~ 10
5
m/s
E
sat
~ 1.7x10
6
V/m
Electric Field in Channel:
v
sat
e
r

V
e
l
o
c
i
t
y
General Short-Channel I
d
equation:
C
a
r
r
i
e
E
sat
E-Field
I
D
vs V
GS
-V
t
is linear instead of quadratic. Due to hot
i ff f l l i i i h carrier effect from electrons velocity saturating in the
channel
Summary of BJ T CMOS Large Signal Model
BJ T
CMOS
BJ T CMOS SS Model
Chapter 3: Single Transistor Amps