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.. , ..

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SYNOPSYS TCAD

2012

:
, - . , ..

.. , .. , 2012


........................................................................................................... 3
1. - (TCAD).................................. 4
2. Synopsys TCAD ................................................................................ 7
3. Synopsys TCAD.............. 13
4. Synopsys TCAD
.................................................................... 15
4.1. .................................................................. 15
4.2. ............................... 16
4.3. kp- ...................................................................................................... 16
4.4. ............................... 18
4.5. ........................................................................................................ 19
5. Synopsys TCAD.............................................................. 19
5.1. Sentaurus Process......................................................................................... 20
5.1.1. .............................................. 21
5.1.2. ....................................... 21
5.1.3. .......................................................................... 22
5.1.4. ................................................ 22
5.1.5. ................................................. 22
5.1.6. ................................................................................ 23
5.1.7. .................................................................... 23
5.1.8. ........................................................................ 25
5.1.9. .............................................................. 25
5.1.10. .................................................. 26
5.2. Sentaurus Device.......................................................................................... 27
5.2.1. Sentaurus Device .................................... 27
5.2.1.1. File ................................................................................... 28
5.2.1.2. Electrode .......................................................................... 31
5.2.1.3. Physics ............................................................................. 32
5.2.1.4. Plot ................................................................................... 33
5.2.1.5. Math ................................................................................. 33
5.2.1.6. Solve ................................................................................ 34
5.2.2. Sentaurus Device...................................................................... 35
5.2.3. ............................................................................. 35
5.3. Sentaurus Inspect ......................................................................................... 36
5.3.1. Inspect ...................................................................................... 36
5.3.2. ................................................................... 37
5.3.2.1. .......................................................................... 37
5.3.2.2. ........................................................................................ 38
5.3.3. ........................................................... 39
5.4. Sentaurus Workbench .................................................................................. 40
5.4.1. Sentaurus Workbench .............................................................. 41
5.4.2. .................................................................................. 43
5.4.3. .................................................................. 45
5.4.4. ........................................................................................ 46

5.4.5. ............................................................................. 46
5.4.6. .............................................................................. 47
5.4.6.1. ...................................................... 47
5.4.6.2. .................................................................. 50
5.4.7. .............................................................. 50
5.4.7.1. .............................................................. 50
5.4.7.2. ......................................... 52
5.4.7.3. ........................ 55
6. Synopsys TCAD .................................................. 55
6.1. 1.
GaAs .................................................................................................. 55
6.1.1. ........... 55
6.1.2. Sentaurus Device ................................. 57
6.1.3. ................................................................ 59
6.2. 2. GaAs ........................................... 60
6.2.1. .................................................... 60
6.2.2. Sentaurus Device......................... 61
6.2.3. ................................................................ 62
6.3. 3. GaAs .................. 63
6.3.1. Sentaurus Device......................... 63
6.3.2. ................................................................ 64
6.4. 4. AlGaAs/GaAs ........................................................ 68
6.4.1. ................................................................... 69
6.4.2. SDevice ....................................... 69
6.4.3. ................................................................ 70
............................................................................................. 72
. .............................................. 73



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Synopsys TCAD:
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Sentaurus Workbench.

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Sentaurus Workbench
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5. SYNOPSYS TCAD
. 5.1
Synopsys TCAD.
, Sentaurus Process
Sentaurus Device .
Sentaurus Process,
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Ligament, .
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Ligament

Structure Editor

SProcess

Process

Device

SProcess

SDevice

. 5.1. Synopsys TCAD

(. . 5.1), (, Sentaurus Process), Sentaurus Structure Editor.


5.1. Sentaurus Process
Sentaurus Process TCAD. ISE TCAD Floops.
Sentaurus Process -, - . (Two Dimensional,
2D) .

0,18 n- MOSFET.
.
5.1.1.

:
line x location= 0.0 spacing= 1.0<nm> tag=SiTop
line x location=50.0<nm> spacing=10.0<nm>
line x location= 0.5<um> spacing=50.0<nm>
line x location= 2.0<um> spacing= 0.2<um>
line x location= 4.0<um> spacing= 0.4<um>
line x location=10.0<um> spacing= 2.0<um> tag=SiBottom
line y location=0.0 spacing=50.0<nm> tag=Mid
line y location=0.40<um> spacing=50.0<nm> tag=Right

Sentaurus Process : X ( ), Y ( ).
( X) ,
.
( Y) (. 5.2).
(tag),
, .
, Sentaurus Process

.

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, . 5.2.
, X

Y.
.
. .
,
MGOALS.

5.1.2.

region:
region silicon xlo=SiTop xhi=SiBottom ylo=Mid yhi=Right
init concentration=1.0e+15<cm-3> field=Phosphorus
wafer.orient=100


X Y. line.
n- 1015 3. (100), .
5.1.3.

:
implant Boron dose=2.0e13<cm-2> energy=200<keV> tilt=0 rotation=0
implant Boron dose=1.0e13<cm-2> energy= 80<keV> tilt=0 rotation=0
implant Boron dose=2.0e12<cm-2> energy= 25<keV> tilt=0 rotation=0

,
.
5.1.4.

850 C
10 :
mgoals on min.normal.size=1<nm> max.lateral.size=2.0<um> \
normal.growth.ratio=1.4 accuracy=2e-5
diffuse temperature=850<C> time=10.0<min> O2
grid remesh
select z=Boron
layers


MGOALS. O2
1 . grid remesh
MGOALS .
layers ,
3,2 :
{ Top Bottom Integral Material}
{-2.46e-03 7.97e-04 2.67e+09 Oxide }
{ 7.97e-04 1.00e+01 3.21e+13 Silicon}

5.1.5.

deposit poly type=anisotropic thickness=0.18<um>


mask name=gate_mask left=-1 right=90<nm>
etch poly type=anisotropic thickness=0.2<um> mask=gate_mask
etch oxide type=anisotropic thickness=0.1<um>

0,18 .
type=anisotropic ,
.
mask
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1.
gate_mask .
etch
, . , (0,2 ) .
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- .
etch , . .
5.1.6.

, .
, imp_mask , 1 2
4 20 :
mask clear
mask name=imp_mask left=-1.0<um> right= 2.0<um>
mask name=imp_mask left= 4.0<um> right=20.0<um>

negative.
, etch_mask 2 4 :
mask clear
mask name=etch_mask left=-1.0<um> right= 2.0<um> negative
mask name=etch_mask left= 4.0<um> right=20.0<um> negative

, , implant, etch deposit.


, implant
:
implant Boron mask=imp_mask dose=2e13<cm-2> energy=30<keV>
5.1.7.

,
:

diffuse temperature=900<C> time=10.0<min> O2 preszure=0.5<atm> \


mgoals.native

1
0,5 . Sentaurus
Process ,
(. 5.3).
mgoals.native MGOALS
,
.
MGOALS
(. 5.4).

. 5.3.

. 5.4.

:
#--- LDD implantation ---------------------------------refinebox silicon min= {0.0 0.05} max= {0.1 0.12} \
xrefine= {0.01 0.01 0.01} yrefine= {0.01 0.01 0.01} add
refinebox remesh
implant Arsenic dose=4e14<cm-2> energy=10<keV> tilt=0 rotation=0
diffuse temperature=1050<C> time=0.1<s> ; # Quick activation
struct tdr=NMOS5 ; # LDD Implant
#--- Halo implantation: Quad HALO implants ------------implant Boron dose=0.25e13<cm-2> energy=20<keV> \
tilt=30<degree> rotation=0
implant Boron dose=0.25e13<cm-2> energy=20<keV> \

tilt=30<degree> rotation=90<degree>
implant Boron dose=0.25e13<cm-2> energy=20<keV> \
tilt=30<degree> rotation=180<degree>
implant Boron dose=0.25e13<cm-2> energy=20<keV> \
tilt=30<degree> rotation=270<degree>
#--- RTA of LDD/HALO implants -------------------------diffuse temperature=1050<C> time=5.0<s>
struct tdr=NMOS6 ; # Halo RTA
#--- Nitride spacer -----------------------------------deposit nitride type=isotropic thickness=60<nm>
etch nitride type=anisotropic thickness=84<nm>
etch oxide type=anisotropic thickness=10<nm>
struct tdr=NMOS7 ; # Spacer
#--- N+ implantation ----------------------------------refinebox silicon min= {0.04 0.05} max= {0.18 0.4} \
xrefine= {0.01 0.01 0.01} yrefine= {0.05 0.05 0.05} add
refinebox remesh
implant Arsenic dose=5e15<cm-2> energy=40<keV> \
tilt=7<degree> rotation=-90<degree>
#--- N+ implantation & final RTA ---------------------diffuse temperature=1050<C> time=10.0<s>
struct tdr=NMOS8 ; # S/D implants

, ,
,
.
5.1.8.

:
deposit Aluminum type=isotropic thickness=30<nm>
mask name=contacts_mask left=0.2<um> right=1.0<um>
etch Aluminum type=anisotropic thickness=0.25<um> mask=contacts_mask
etch Aluminum type=isotropic thickness=0.02<um> mask=contacts_mask

.

.
.
5.1.9.

, :

transform reflect left


struct smesh=NMOS


transform.
struct.
smesh
,
Mesh
Sentaurus
Structure Editor.


DF-ISE :
struct

. 5.5.

ise.mdraw=NMOS

. 5.5.

5.1.10.


:
SetPlxList {BTotal NetActive}
WritePlx NMOS_channel.plx y=0.0 silicon
SetPlxList {AsTotal BTotal NetActive}
WritePlx NMOS_ldd.plx y=0.1 silicon
SetPlxList {AsTotal BTotal NetActive}
WritePlx NMOS_sd.plx y=0.35 silicon

. 5.6, 5.7.

. 5.6.

() (

), ()
/ ()

. 5.7.

()
/ (
)
()

5.2. Sentaurus Device


Sentaurus Device
, ,
. -, -, .
5.2.1. Sentaurus Device

Sentaurus Device
- Si MOSFET,
:
File {
* input files:
Grid = nmos_msh.tdr
* output files:
Plot = n1_des.tdr

Current = n1_des.plt
Output = n1_des.log
}
Electrode {
{ Name=source Voltage=0.0 }
{ Name=drain Voltage=0.1 }
{ Name=gate Voltage=0.0 Barrier=-0.55 }
{ Name=substrate Voltage=0.0 }
}
Physics {
Mobility (DopingDependence HighFieldSat Enormal)
EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom))
}
Plot {
eDensity hDensity eCurrent hCurrent
Potential SpaceCharge ElectricField
eMobility hMobility eVelocity hVelocity
Doping DonorConcentration AcceptorConcentration
}
Math {
Extrapolate
RelErrControl
}
Solve {
#-initial solution:
Poisson
Coupled { Poisson Electron }
#-ramp gate:
Quasistationary (
Goal{ Name=gate Voltage=2 } )
{ Coupled { Poisson Electron } }
}
5.2.1.1. File

, .
File {
* input files:
Grid = nmos_msh.tdr
* output files:
Plot = n1_des.tdr
Current = n1_des.plt
Output = n1_des.log
}

.
File { .
* input files: , ,
.
Grid = nmos_msh.tdr ,
( *.tdr), ,
, ,
. Sentaurus Device , .
.
* output files: , , .
Plot = n1_des.tdr ,
(
_des.tdr).
, , *.tdr. , Plot ( Plot ).
Current = n1_des.plt ( , , ..). _des.plt. CurrentPlot, ,
.
, .
Output = n1_des.log , ( Sentaurus Device).
, }.
,
.
*.grd *.dat . File :
File {
* input files:
Grid = nmos_msh.grd
Doping = nmos_msh.dat
* output files:
Plot = n1_des.dat
Current = n1_des.plt
Output = n1_des.log
}

, ,
Plot, *.dat, ..
, .
, Grid,
n1_des.dat nmos_msh.grd Inspect (. . 5.3).

, *.par. , .
:
Parameter = nmos.par

, ,

Sentaurus Workbench (SWB). Sentaurus Device
SWB, ,
SWB
.
SWB :
:
@grid@ *.grd- ;
@doping@ *.dat- ;
@tdr@ *.tdr- ;
@parameter@ *.par- .
:
@plot@ *.dat- ;
@dat@ *.plt- ;
@tdrdat@ *.tdr- ;
@log@ *.log-.
File :

File {
* input files:
Grid = @tdr@
* output files:
Plot = @tdrdat@
Current = @plot@
Output = @log@
}

5.2.1.2. Electrode

Electrode
, . Sentaurus Device . Electrode ,
,
. ,
, .
Electrode, :
Electrode {
{ Name=source Voltage=0.0 }
{ Name=drain Voltage=0.1 }
{ Name=gate Voltage=0.0 Barrier=-0.55 }
{ Name=substrate Voltage=0.0 }
}

Electrode { .
{ Name=source Voltage=0.0 } :
Name=source , source,
, ;
Voltage=0.0 ( ),
.
, , () .
, , , Quasistationary Solve.
, .
:
{ Name=gate Voltage=0.0 Barrier=-0.55 }


Barrier=-0.55

,
0,55 .
(, ), -

Shottky. :
{ Name=gate Voltage=0.0 Shottky Barrier=-0.55 }

Electrode , , Sentaurus Device [6].


5.2.1.3. Physics

, . ,
( ,
).
(, ),
. :
Physics {
Mobility (DopingDependence HighFieldSat Enormal)
EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom))
}

Physics { .
Mobility (DopingDependence HighFieldSat Enormal) .
(DopingDependence),
(HighFieldSat),
(Enormal).
EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom))
, (BandGapNarrowing)
OldSlotboom.
,
. ,
, ,
, .
, Sentaurus
Device, [6]. ,
Physics ,

. - , .
1. , *.par.
2. Math
, .
3.
, .
, .
5.2.1.4. Plot

Plot , *.tdr. :
Plot {
eDensity hDensity eCurrent hCurrent
Potential SpaceCharge ElectricField
eMobility hMobility eVelocity hVelocity
Doping DonorConcentration AcceptorConcentration
}

Plot { ,
. , , :
eDensity ;
hDensity ;
eCurrent ;
hCurrent ..
, /Vector , :
Plot { eCurrent/Vector ElectricField/Vector }

, Sentaurus Device, [6].


5.2.1.5. Math

Math , .
Sentaurus Device
,
. ,
, , . Math , , , .

, Math,
[6]. Math :
Math {
Extrapolate
RelErrControl
}

Math { .
Extrapolate ,
,
( ).
RelErrControl ,
ErrRef, .
5.2.1.6. Solve

Solve. , Sentaurus Device.


100 , 0 .
0 2 ,
, .
, ,
. ,

. ,
(, ),
n1_des.plt ,
. , Inspect (. . 5.3). Solve, , :
Solve {
#-initial solution:
Poisson
Coupled { Poisson Electron }
#-ramp gate:
Quasistationary (
Goal{ Name=gate Voltage=2 } )
{ Coupled { Poisson Electron } }
}

Solve { , .

#-initial solution: , , .
Poisson , , .
Coupled { Poisson Electron } , ,
. ,
.
Quasistationary (
Goal{ Name=gate Voltage=2 } )
{ Coupled { Poisson Electron } }

Quasistationary , , ..
, . , , Goal.
, 0 2 .
( Coupled { Poisson Electron } ).

Sentaurus Device. ,
.
5.2.2. Sentaurus Device

Sentaurus Device :
> sdevice [command_file_name]

[command_file_name]
Sentaurus Device, :
> sdevice pp1_des.cmd

Sentaurus Device :
> sdevice h

Sentaurus Device . , .log. , , Sentaurus Device , ,


, ,
, , .
5.2.3.


, File.
*.plt
Inspect (. . 5.3).


( OuterVoltage gate)
X,
( eCurrent
drain) Y, ,
. 5.8.

. 5.8.



.
, 0,1
.
5.3. Sentaurus Inspect
Inspect , , , .
, .
Inspect , , , , . Inspect Tcl .
, , ,
Tecplot SV.
5.3.1. Inspect

Inspect,
> inspect

Inspect .
Inspect Sentaurus Workbench
Tecplot SV.
Inspect (. 5.9).

:
;
, ;
: Datasets ( ) Curves
().

. 5.9. Inspect

Datasets
. To X Axis, To Left Y Axis To Right Axis, Datasets, .
Curves ; New, Edit Delete; New
, Edit
, Delete .

Inspect .
5.3.2.
5.3.2.1.

Inspect ,
. DF-ISE .plt . DF-ISE .plt Synopsys TCAD, Sentaurus
Device. , , n1_des.plt.
, :
This is a comment line.
1 0.1
2 0.5
3 0.9
...
5.3.2.2.

Inspect

> inspect n1_des.plt


n1_des.plt , ,

.
, , :
> inspect n1_des.plt n2_des.plt n3_des.plt ...

Inspect , ,
File > Load Datasets
.
Inspect Load Dataset (. 5.10),
.

. 5.10.

,
Datasets.
, , (. 5.11).

. 5.11. ,
Datasets
5.3.3.

,
Inspect ,
X Y. ,
.
To X Axis, To Left Y Axis To Right Y Axis.
, X
OuterVoltage gate n1_des, .
1. n1_des Datasets.
2. gate .
3. OuterVoltage .
4. To X Axis.

5. Y, , To Left Y axis To Right Y axis. (


Y.)
. 5.12
( TotalCurrent drain Y)
(OuterVoltage X).

. 5.12.

5.4. Sentaurus Workbench


Sentaurus Workbench , . , .
. Sentaurus
Workbench , , , .
Sentaurus Workbench
(). .

5.4.1. Sentaurus Workbench

Sentaurus Workbench : swb.


Sentaurus Workbench
(. 5.13), (
). Sentaurus Workbench
.

. 5.13. Sentaurus Workbench


.

(. 5.14).

. 5.14. Sentaurus Workbench, (1),


(2) (3)


, . Sentaurus Process, Sentaurus Structure Editor, Sentaurus Device Inspect (. . 5.14).
[n1], [n2]
..
View >
Tree Options > Show Node Numbers.
(
)
(experiment). .
(extracted)
.
.
,
. (.
5.15).
, ,
, , , , , .
, . 5.15.

.

, .
,
(status). Sentaurus Workbench (. 5.16)
.

. 5.16. ,

, , (. . 5.14),
. ,
.
,
.
,
.
1. Project > Clean Up.
2. Clean Up Options (. 5.17) ,
.
3. OK.

. 5.17. Clean Up Options

Sentaurus Workbench ,
, ( done) ( none).
5.4.2.

, .
1. Project > Run Ctrl+R (
Run ).
2. Run Project (. 5.18) Run, .

. 5.18. Run Project

, Nodes . , 15 16 15 16.
Sentaurus Workbench , Project Log (. 5.19), .
Sentaurus Workbench , :
>>>>>>>>>> job '10' status changed from 'pending'
to 'running'
09:34:49 Jul 19 2005 job 10 <sprocess> started on
host 'hude-d740-lnx': /remote/tcadprod/bin/sprocess u n10_fps.cmd

Sentaurus Workbench
, . Sentaurus Workbench
, pp<node_number>_<tool_name>.cmd
pp<node_number>_des.par ( Sentaurus Device).

. 5.19. Project Log

, Sentaurus Workbench Project Log:


SCHEDULING REPORT
+++ done : 40 39 41 42 43 44 45 46 47 48 50 49 51 52 53 54 55 56 57 58
60 59 61 62 10 11 12 13 14 21 22 23 24 25 26 9
10:10:33 Jul 19 2005 <SWB_nmos> done (2146 sec)
>>>>>> Writing to status file 2146
gsub exits with status 0

, Sentaurus
Workbench.
5.4.3.


, ,
Visualize. .

Sentaurus Process Mdraw, Sentaurus Device


Tecplot SV, .plx .plt Sentaurus
Device Inspect.
, . View Output
.
5.4.4.

, . .
,
.
.
1. Click node 2. 2.
2. Nodes > Extend Selection To > Leaves.
3. Nodes > Extend Selection To > Root.
4. : Nodes > Deselect All.
5. 9 done none.
6. Nodes > Select > By Status > done. 9
.
:
Nodes > Select > Inverse Of > none.
5.4.5.

:
1) Projects;
2) Delete.
(. 5.20),
.

. 5.20.

OK Project > Close,


.
. 12 Yes
.

5.4.6.

, Project > New


.
, g_lnx_2879_0.tmp,
tmp, Projects (. 5.21).

. 5.21.
5.4.6.1.

.
, : Sentaurus Process, Sentaurus Structure Editor, Sentaurus Device
Inspect.
No Tools Family Tree (. 5.22) Add Tool
.

. 5.22. ,

Add Tool (. 5.23).

. 5.23. Add Tool

Tool Name ,
Sentaurus Process.
,
sprocess, . ( , . Sentaurus
Process sprocess1, sprocess2 .. .)
DB Tool sprocess . OK,
.
Use Ligament, Sentaurus Process
Ligament.
, Sentaurus Process (batch mode).
1. Sentaurus
Process Edit Input > Preferences, Edit Preferences (.
5.24).
2. Start in batch mode.
3. OK.
Create Default
. 5.24.
Experiment, (.
Edit Preferences
5.25).
Sentaurus Process
:
1) new ;
2) OK.

Sentaurus Process Ligament. SWB_nmos,
. 5.25.
Synopsys TCAD.
Create Default Experiment
:
1) Sentaurus Process Import File > Ligament Flow;
2) Import Flow File
SWB_nmos sprocess_lig.cmd (. 5.26);
3) Open.

Sentaurus Process, Import File > Ligament
Layout sprocess_lig.lyt. ( Edit Input > Ligament Layout, Ligament Layout
Editor .) Sentaurus
Process .

. 5.26. Import Flow File

Sentaurus Structure Editor:


1) Sentaurus Process Add;
2) Add Tool sde Tool Name sde DB Tool;
3) After Selected Tool,
Sentaurus Process ( Use Ligament);
4) , Sentaurus Structure Editor
, Sentaurus Structure Editor
Edit Input > Preferences, Edit
Preferences;
5) Start in
batch mode (. 5.27).
Sentaurus Structure
Editor. , Sentaurus
Process, Sentaurus
Structure Editor Import File
> Commands, SWB_nmos
sde_dvs.cmd.

Sentaurus
Device:
1) 15,
Sentaurus Structure Editor, . 5.27.
sde sdevice
Edit Preferences
;
Sentaurus Structure Editor
2) sdevice DB
tool;
3)
sdevice_des.cmd .

Import File > Parameter (Si Model), SWB_nmos sdevice.par.


Inspect:
1) , Sentaurus Device, sdevice
inspect ;
2) inspect DB tool;
3) inspect_ins.cmd ;
4) Edit Input > Preferences Start in batch
mode;
5) OK.
5.4.6.2.

, .
1. Project > Save As.
2. , .
3. SWB_nmos_example.
5.4.7.
5.4.7.1.

Sentaurus Workbench
.
, N
N . P1 P2,
M N , M N
.
Sentaurus Process,
Sentaurus Structure Editor Sentaurus Device. Sentaurus Process :
Type;
( lgate);
( HaloDose);
( HaloEnergy).
Sentaurus Structure Editor
polygate ( PolyDop).
Sentaurus Device :
, ( Vdd);
( Vds).
(, Type Sentaurus Process),
.
1. , Sentaurus Process Sentaurus
Workbench, Add.
2. Add Parameter ,
. 5.28.

3. OK.
, .
1.
Type Add.
2. Add Parameter lgate
0,18.
3. . 5.28.
HaloDose Add Parameter
1e13 HaloEnergy 15.
Sentaurus Structure Editor PolyDop
6e19.
Sentaurus Device Vdd
1,5 Vds 0,05.
Sentaurus Workbench ,
. 5.29.

. 5.29. Sentaurus Workbench

, ,
Sentaurus Structure Editor sde_dvs.cmd,
Sentaurus Structure Editor Edit Input > Commands,
sde_dvs.cmd.
(define PolyDop @PolyDop@)

Sentaurus Device Vdd Vds :


{ Name=gate Voltage=!(puts [expr $SIGN*@Vdd@])! }
{ Name=drain Voltage=!(puts [expr $SIGN*@Vds@])! }

@PolyDop@, @Vdd@ @Vds@ ,


,
, .
, , .
,
Project > Preprocess Ctrl+P (. 5.30).

. 5.30. Preprocessor Log


5.4.7.2.

. 5.31.

Add New Experiment dialog box



, .
1. Experiments > Add New Experiment.
2. , . 5.31.

, :
Experiment 3
Type : nMOS
lgate : 0.18
HaloDose : 1e13
HaloEnergy : 25
PolyDop : 6e19
Vdd : 1.5
Vds : 0.05
Experiment 6
Type : nMOS
lgate : 0.18
HaloDose : 1e12
HaloEnergy : 15
PolyDop : 6e19
Vdd : 1.5
Vds : 1.5
Experiment 9
Type : nMOS
lgate : 0.13
HaloDose : 1e13
HaloEnergy : 25
PolyDop : 6e19
Vdd : 1.5
Vds : 0.05
Experiment 12
Type : nMOS
lgate : 0.13
HaloDose : 1e12
HaloEnergy : 15
PolyDop : 6e19
Vdd : 1.5
Vds : 1.5

Experiment 4
Type : nMOS
lgate : 0.18
HaloDose : 1e13
HaloEnergy : 25
PolyDop : 6e19
Vdd : 1.5
Vds : 1.5
Experiment 7
Type : nMOS
lgate : 0.13
HaloDose : 1e13
HaloEnergy : 15
PolyDop : 6e19
Vdd : 1.5
Vds : 0.05
Experiment 10
Type : nMOS
lgate : 0.13
HaloDose : 1e13
HaloEnergy : 25
PolyDop : 6e19
Vdd : 1.5
Vds : 1.5

Experiment 5
Type : nMOS
lgate : 0.18
HaloDose : 1e12
HaloEnergy : 15
PolyDop : 6e19
Vdd : 1.5
Vds : 0.05
Experiment 8
Type : nMOS
lgate : 0.13
HaloDose : 1e13
HaloEnergy : 15
PolyDop : 6e19
Vdd : 1.5
Vds : 1.5
Experiment 11
Type : nMOS
lgate : 0.13
HaloDose : 1e12
HaloEnergy : 15
PolyDop : 6e19
Vdd : 1.5
Vds : 0.05

, .

Project > Clean Up


(. 5.32).

. 5.32. Clean Up Options

Sentaurus Workbench ,
. 5.33.

. 5.33.



,
Add Values,
,
. 5.34.

. 5.34.
Add Parameter Values

5.4.7.3.

,
.
,
Project > Preprocessing or Ctrl+P.
, :
Project > Run.

.
6.

SYNOPSYS TCAD

6.1. 1.
GaAs
,
.
, ,
.

0,1 , ( 1014 3 p-) .
1019 3
. .
- ,
,
.
6.1.1.

Sentaurus Workbench .
Mesh. Edit input > Boundary...
Sentaurus Structure Editor (SDE).

(Exact Coordinates), (GaAs)

(0;0) (3;2), XY. . Mesh > Define Ref/Eval


Window > Rectangle
(0; 0) (3; 0,1) .
,
(0; 0), (0,5; 0.3) (2,5; 0), (3; 0,3).
, . .
Device > Constant Profile Placement...
Placement Type Region > region_1, Constant
Profile Definition (Name) Background
(Concentration) 1e14, Species BoronActiveConcentration,
p- . Add
Placement, .
Placement Name
ConstantProfilePlacement_2, Placement Type Ref/Eval
Window, Ref/EvalWin_1 (
). Constant Profile Definition Channel, (Species) ArsenicActiveConcentration (
n-) 3.5e17. .
, .
, ,
. , ,
Mesh > Refinement Placement...,
(Placement Name), ,
(Placement Type),
(Max Element Size Min Element Size)
Add Placement.
Region > region_1, 0,05.
0,01 Ref/Eval Window > RefEvalWin_1.

.
, . ( Add Vertex) (0,5; 0) (2,5; 0). Contacts > Contact Sets,
(Contact Name) source Set,
Activate, . -

(Selection Level > Edge ), (


) Contacts > Set Contact . ( drain).
, .
File > Save Model As...
mesh_msh.cmd. File > Save Boundary As... mesh_msh.bnd. ,
Sentaurus Workbench .
Sentaurus Structure Editor SWB.
. ,
.

6.1.2. Sentaurus Device

,
, Sentaurus
Device. SWB sdevice,
Edit Input >
Commands... , , , . , ,
:
File {
Grid = @grid@
Doping=@doping@
Plot = @dat@
Current = @plot@
Output = @log@
}
Electrode {
{ Name=source Voltage=0.0 }
{ Name=drain Voltage=0.0}
{ Name=gate Voltage=0.0 Barrier=-0.55 }
}
Physics {
Mobility (DopingDependence HighFieldSat Enormal)
EffectiveIntrinsicDensity (BandGapNarrowing (OldSlotboom))
}
Plot {
eDensity hDensity eCurrent hCurrent
Potential SpaceCharge ElectricField
eMobility hMobility eVelocity hVelocity

Doping DonorConcentration AcceptorConcentration


}
Math {
Extrapolate
RelErrControl
}
Solve {
#-initial solution:
Poisson
Coupled { Poisson Electron }
#-ramp gate:
Quasistationary (
Goal{ Name=gate Voltage=2 } )
{ Coupled { Poisson Electron } }
}

File ,
. SWB .
Electrode gate. source drain,
. Electrode :
Electrode {
{ Name=source Voltage=0.0 }
{ Name=drain Voltage=0.0}
}

,
(DopingDependence),
(HihgFieldSaturation).

Physics {
Mobility (DopingDependence HighFieldSaturation)
}

Plot Math .
Solve .
, ,
. gate drain
5 , :
Solve {
#-initial solution:
Poisson
Coupled { Poisson Electron }
Quasistationary (

Goal{ Name=drain Voltage=5 } )


{ Coupled { Poisson Electron } }
}

. . , .
6.1.3.


Visualize > .plt Files > Inspect.
drain(TotalCurrent) drain(OuterVoltage) (. 6.1).
, , ..
.
, .

. 6.1.


,
Visualize > .dat Files (Tecplot SV).
ElectricField (. 6.2). , ,
.

. 6.2.

6.2. 2. GaAs

.
SWB, 1.
1
.

.
.
6.2.1.

SWB
. SDE *.bnd Mesh, .

, (Add Vertex) (1,25; 0)

(1,75; 0). gate . . ,


, , .
6.2.2. Sentaurus Device

SWB SDevice. Electrode gate.


,
, . Electrode :
Electrode {
{ Name=source Voltage=0.0 }
{ Name=drain Voltage=0.0}
{ Name=gate Voltage=0.0 Schottky Barrier=0.7 }
}

Physics, Plot Math .


,
. Solve , :
Solve {
#-initial solution:
Poisson
Coupled { Poisson Electron }
Quasistationary ( MaxStep=0.02
Goal{ Name=gate Voltage=@Vg@ } )
{ Coupled { Poisson Electron } }
}

MaxStep (),
. , 1 1 0,02 = 0,02 .
, @Vg@.
SWB SDevice
.
SWB.
@Vg@,
Sdevice
Add... Parameter Vg, Default Value 1. , 1.
( ), .
, Add Values... : Min. Value = 1,

Step = 2, Number of Values = 2. Vg


: 1 1. .

6.2.3.

, *.plt, 1 , gate(TotalCurrent)
gate(OuterVoltage). ,

(
).
,
,

n6_des.plt (File > Load Dataset...)


.
,

0,50,6 .

(0,7 ),

. ,
. 6.3.
(. 6.3).

*.dat Tecplot. eDensity (. 6.4).

. 6.4. ()
()

,
gate ,
104 3, . .
6.3. 3. GaAs

() .
, , .
, 2, , SDevice SWB.
6.3.1. Sentaurus Device

SWB , 2,
. SDevice .
Solve.

, Solve :
Solve {
#-initial solution:

Poisson
Coupled { Poisson Electron }
Quasistationary ( MaxStep=0.02
Goal{ Name=gate Voltage=@Vg@ } )
{ Coupled { Poisson Electron } }
Quasistationary ( MaxStep=0.02
Goal{ Name=drain Voltage=@Vd@ } )
{ Coupled { Poisson Electron } }
}

,
Quasistationary, @Vd@ .
.
@Vg@
.
@Vg@, .
@Vd@,
@Vg@. ,
@Vd@=5 @Vg@ = 1, 0, 1, 2, 3 , .
,
: Vd 5
Vg ( Before Selected Step ), Vg
: Min. Value = 0, Step = 1, Number of Values = 4.
5 ,
.
6.3.2.


*.plt Inspect (. 6.5).

. 6.5.

,
, .. . , 1 .
, ( , ,
). , . (
) ,
. , , 0
3 .


, *.dat
Tecplot.
ElectricField (. 6.6). ,

(Vg = 3 ), ,
(8 ). , ,
,
, , ..
.
eCurrentDensity,
(. 6.7). ,
. . .

.

. 6.6.

6.4. 4. AlGaAs/GaAs
. 6.7.

AlGaAs/GaAs
(High Electron Mobility Transistor HEMT). GaAs
HEMT. GaAs , GaAs HEMT GaAs,
, 3,5 1017 3. ,
, ,
. , .
GaAs , , GaAs . , AlGaAs/GaAs. AlGaAs 1018 3,
GaAs . AlGaAs/GaAs ,
, GaAs. , , , GaAs
.
3, GaAs HEMT .
6.4.1.

3 SWB . SDE mesh_msh.bnd,


mesh_msh.cmd (File > Import...). AlGaAs.
, AlGaAs, Edit > Change Material. , Draw > Overlap Behavior > New Overlaps
Old. . GaAs (0; 0,05) (3; 0,075),
*.bnd.
.
ConstantProfilePlacement_2 Constant Profile Placement,
Define Ref/Eval Window
AlGaAs (X1 = 0; X2 = 3; Y1 = 0; Y2 = 0,05; Z1 = 1; Z2 = 2),
Constant Profile Definition Species=ArsenicActiveConcentration,
Concentration=1e18 Change Placement.
*.cmd.

6.4.2. SDevice

SDevice . File,
Electrode Physics , Physics
:
Physics (Material=AlGaAs) {
MoleFraction(xFraction=0.26 Grading=0)
}

Physics, AlGaAs.
AlGaAs, (,
).
Plot ValenceBandEnergy
ConductionBandEnergy. Math Solve . .
6.4.3.

*.plt Inspect
(. 6.8). ,
, 0 1 HEMT . ,
GaAs HEMT , GaAs
, .. , .

, ,
, 5 , ,
(
).
, HEMT 2 .
,
.
SDevice 5
0 Vg = 0. *.dat
Tecplot.
X (X cut) 1,5 .
ConductionBandEnergy ValenceBandEnergy.
Create Permanent Linemaps.
( eDencity) Y2
. , . 6.9.

. 6.8. GaAs HEMT

. 6.9.

, ( 0,05 , .. , GaAs) (0 ).
, .
.
HEMT
[7].


1. Armstrong G.A. TCAD for Si, SiGe and GaAs integrated circuits / G.A.
Armstrong, C.K. Maiti. IET, 2007. 456 p.
2. /
.. [ .] // . . . C ,
CAD/CAM/PDM 2008, , 2123
2008. ., 2008.
3. The International Technology Roadmap for Semiconductors Official Site
[ ]. : http://www.itrs.net.
4. Synopsys Official Site [ ]. : http://
www.synopsys.com.
5. . - Synopsys / . // Chip News. 2006. 9. . 2225.
6. Sentaurus Device User Guide. Version D-2010.03, March 2010. Synopsys, Inc, 2010. 1328 p.

7. . - (HEMT) Synopsys Sentaurus TCAD


/ . , . , . // : , , . 2009. 7.

1. - ?
2. TCAD?
3. TCAD
?
4. Synopsys TCAD?
5. Synopsys TCAD
?
6.
?
7. ?
8. TCAD ?
9. Synopsys TCAD
?
10.
Sentaurus Process?

11.
Sentaurus Device?
12. Sentaurus Process? .
13. Sentaurus Device?
14. Inspect, ?
15. Sentaurus Workbench?
16. Sentaurus Workbench?
17. Sentaurus Workbench ?