PolarHVTM HiPerFET

Power MOSFET

IXFB 100N50P

VDSS
ID25

RDS(on)
trr

N-Channel Enhancement Mode

Avalanche Rated
Fast Intrinsic Diode

Symbol

Test Conditions

VDSS

TJ = 25 C to 150 C

500

VDGR

TJ = 25 C to 150 C; RGS = 1 M

500

VGSS

Continuous

30

VGSM

Transient

40

ID25
IDRMS
IDM

TC = 25 C
External lead current limit
TC = 25 C, pulse width limited by TJM

100
75
250

A
A
A

IAR

TC = 25 C

100

EAR

TC = 25 C

100

mJ

EAS

TC = 25 C

dv/dt

IS IDM, di/dt 100 A/s, VDD VDSS,

TJ 150 C, RG = 2

20

V/ns

PD

Maximum Ratings

1250

-55 ... +150

150
-55 ... +150

C
C
C

300
260

C
C

30..120/7.5...2.7

N/lb

TJ
TJM
Tstg
TL
TSOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

FC

Mounting force

PLUS264TM (IXFB)

Weight

10

Characteristic Values
Min. Typ.
Max.

BVDSS

VGS = 0 V, ID = 3 mA

500

VGS(th)

VDS = VGS, ID = 8 mA

3.0

IGSS

VGS = 30 VDC, VDS = 0

IDSS

VDS = VDSS
VGS = 0 V

RDS(on)

VGS = 10 V, ID = 0.5 ID25, Note 1

2006 IXYS All rights reserved

TJ = 125 C

D = Drain
TAB = Drain

Features
l

International standard packages

Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect

Advantages
l
l
l

Symbol
Test Conditions
(TJ = 25 C, unless otherwise specified)

(TAB)
D

G = Gate
S = Source

TC = 25 C

= 500 V
= 100 A
49 m

200 ns

Plus 264TM package for clip or spring

Space savings
High power density

V
5.0

200

nA

25
2000

A
A

49

DS99496E(01/06)

IXFB 100N50P
Symbol

Test Conditions

Characteristic Values
(TJ = 25 C, unless otherwise specified)
Min. Typ. Max.

gfs

VDS = 20 V; ID = 0.5 ID25, Note 1

50

80

20

nF

1700

pF

140

pF

36

ns

29

ns

110

ns

26

ns

240

nC

96

nC

78

nC

Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss
Crss
td(on)
tr

VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25

td(off)

RG = 1 (External)

tf
Qg(on)
Qgs

VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25

Qgd

PLUS264TM (IXFB) Outline

0.10 C/W

RthJC

C/W

0.13

RthCS

Source-Drain Diode

Characteristic Values
(TJ = 25 C, unless otherwise specified)
Min. Typ. Max.

Symbol

Test Conditions

IS

VGS = 0 V

100

ISM

Repetitive

250

VSD

IF = IS, VGS = 0 V, Note 1

1.5

trr

IF = 25A, -di/dt = 100 A/s

200

ns

QRM
IRM

VR = 100V

0.6
6.0

C
A

Notes:
1. Pulse test, t 300 s, duty cycle d 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106

4,931,844
5,017,508
5,034,796

5,049,961
5,063,307
5,187,117

5,237,481
5,381,025
5,486,715

6,162,665
6,259,123 B1
6,306,728 B1

6,404,065 B1
6,534,343
6,583,505

6,683,344
6,710,405B2
6,710,463

6,727,585
6,759,692
6,771,478 B2

IXFB 100N50P
Fig. 1. Output Characteristics
@ 25C

Fig. 2. Extended Output Characteristics

@ 25C

100

220
V GS = 10V
8V

90

180

80

160

70
7V

60

I D - Amperes

I D - Amperes

V GS = 10V
9V

200

50
40
6V

30

8V

140
120
100

7V

80
60

20

40

10

20

5V

6V

0
0

0.5

1.5

2.5

3.5

4.5

5.5

100

18

20

22

24

26

2.5

R DS(on) - Normalized

I D - Amperes

16

V GS = 10V

2.8

70
60
50
6V
40
30

2.2
1.9

I D = 100A

1.6
I D = 50A

1.3
1

20
5V

0.7

10

0.4

0
0

10

-50

11

-25

25

50

75

100

125

150

125

150

T J - Degrees Centigrade

V DS - Volts

Fig. 5. R DS(on) Normalized to ID = 50A Value

vs. Drain Current

Fig. 6. Maximum Drain Current v s.

Case Temperature
90

3
V GS = 10V

2.8

External Lead Current Limit

80
TJ = 125C

2.6

70

2.4
2.2

I D - Amperes

R DS(on) - Normalized

14

3.1

V GS = 10V
8V
7V

80

12

Fig. 4. R DS(on) Normalized to ID = 50A Value

v s. Junction Temperature

Fig. 3. Output Characteristics

@ 125C
90

10

V DS - Volts

V DS - Volts

2
1.8
1.6

60
50
40
30

1.4

TJ = 25C

20

1.2

10

1
0.8

0
0

20

40

60

80

100

120

I D - Amperes

2006 IXYS All rights reserved

140

160

180

200

220

-50

-25

25

50

75

T J - Degrees Centigrade

100

IXFB 100N50P
Fig. 8. Transconductance

Fig. 7. Input Admittance

160

150
135

140

120
120

g f s - Siemens

I D - Amperes

105
100

TJ = 125C
25C
- 40C

80
60

TJ = - 40C
25C
125C

90
75
60
45

40
30
20

15

0
4

4.5

5.5

6.5

7.5

20

40

60

V GS - Volts

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

100

120

140

160

180

225

250

Fig. 10. Gate Charge

300

10
V DS = 250V

9
250

I D = 50A

I G = 10mA

200

V GS - Volts

I S - Amperes

80

I D - Amperes

150

100

TJ = 125C

6
5
4
3
2

TJ = 25C

50

1
0

0
0.4

0.6

0.8

1.2

1.4

1.6

25

50

V SD - Volts

75

100

125

150

175

200

Q G - NanoCoulombs

Fig. 12. Forward-Bias Safe Operating Area

Fig. 11. Capacitance

100,000

1,000
RDS(on) Limit

C iss

25s

10,000

I D - Amperes

Capacitance - PicoFarads

f = 1 MHz

C oss
1,000

100s

100

1ms
10ms

10

DC
TJ = 150C

C rss

TC = 25C

100

1
0

10

15

20

25

30

35

40

V DS - Volts

IXYS reserves the right to change limits, test conditions, and dimensions.

10

100

V DS - Volts

1000

IXFB 100N50P

Fig. 13. Maximum Transient Thermal Resistance

R (th)JC - C / W

1.000

0.100

0.010

0.001
0.0001

0.001

0.01

0.1

Pulse W idth - Seconds

2006 IXYS All rights reserved

10