2.3.3.

Tnh chn thit b

mch iu khin n nh ta chn U Nguon 5(V )
V theo yu cu ti cn cch ly mch lc vi mch iu khin nn:
Chn Optocopupler PC817 c cc thng s sau:
Loi

IF

VR

VCEO

IC

PC817

50

70mW

6V

35 V

50mA

Chn Transistor loi NPN 2SC828 c cc thng s sau:

Loi

Pmax(mW) fmax(MHz) Tmax

(0C)

VCB(V) VCE(V)

VEB(V) IC(mA)

C828

400

30

200

220

150

25

50

Theo l thuyt do st p trn Optocopupler chn s 1,2 l 0.7V v trn Transistor loi
NPN C828 cng l 0.7V nn
U R 4 5 0.7 0.7 3.6(V )

R4

U R4
3.6

72()
IC
50 10 3

Ta c IB =
Z R 3,5

IC
50
=
= 0.25 (mA)

200

5 0.7
17, 2(k )
0.25 103

Ta chn R3 10 R5
R5 1.6(k ) , R3 15.6(k )

Ta c:
f

1
T

T 0.693 R1 2 R2 C

T1= 0.693 R1 2 R2 C
T2= 0.693 R2 C

T= Tn Tx
Gi s bi ton yu cu to xung c tn s bin i 0< f < 500Hz.
Vi f=500Hz ta c
T = = 1/500 = 0.002s = 2ms
Chn di iu chnh tc l 10/1 => = 1/10 1, = T1/T
M min = 0.1
Chn = 0.06
T2 = T = 0.06 0.002 = 0.00012s = 0.12(ms)
Chn C1 = 0.1uF => R2 =
R1 =

T2
0.12

103 = 1.73(k)
C1 ln 2 0.1 0.693

T1
0.002
103 1.73 = 27(k)
- R2 =
C1 ln 2
0.1 0.693

Chn bin tr iu chnh c tr s R = 10(k)

Theo u bi ta c P=50W, U=36V, I dm = 9,65A
Mosfet MTP12N18 c thng s sau:
Loi

VDSS

RDS (on)

I D ( 25C )

I D ( 100C )

MTP12N18

180V

0.35

12A

9.5A