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MOSIS WAFER ACCEPTANCE TESTS

RUN: T92Y (MM_NON-EPI_THK-MTL)


TECHNOLOGY: SCN018
Run type: DED

VENDOR: TSMC
FEATURE SIZE: 0.18 microns

INTRODUCTION: This report contains the lot average results obtained by MOSIS
from measurements of MOSIS test structures on each wafer of
this fabrication lot. SPICE parameters obtained from similar
measurements on a selected wafer are also attached.
COMMENTS: DSCN6M018_TSMC
TRANSISTOR PARAMETERS

W/L

MINIMUM
Vth

0.27/0.18

SHORT
Idss
Vth
Vpt

20.0/0.18

WIDE
Ids0

20.0/0.18

LARGE
Vth
Vjbkd
Ijlk

50/50

N-CHANNEL P-CHANNEL UNITS


0.50

-0.49 volts

572
0.52
4.7

-276
uA/um
-0.49 volts
-5.2 volts

20.8

K' (Uo*Cox/2)
Low-field Mobility

-15.2

pA/um

0.42
3.7
<50.0

-0.41 volts
-4.4 volts
<50.0 pA

171.0
406.07

-37.0 uA/V^2
87.86 cm^2/V*s

COMMENTS: Poly bias varies with design technology. To account for mask
bias use the appropriate value for the parameters XL and XW
in your SPICE model card.
Design Technology
XL (um) XW (um)
----------------------- -----SCN6M_DEEP (lambda=0.09)
0.00
-0.01
thick oxide
0.00
-0.01
SCN6M_SUBM (lambda=0.10)
-0.02
0.00
thick oxide
-0.02
0.00
FOX TRANSISTORS
Vth

GATE
Poly

N+ACTIVE P+ACTIVE UNITS


>6.6
<-6.6 volts

PROCESS PARAMETERS
N+
P+
POLY N+BLK PLY+BLK
Sheet Resistance
7.0 8.1 8.3
59.5 306.6
Contact Resistance
8.3 8.8 8.1
Gate Oxide Thickness 41
PROCESS PARAMETERS
Sheet Resistance
Contact Resistance

M3 POLY_HRI
0.08
9.74

M4
0.08
15.36

M5
0.07
21.50

M1
0.08

M6
0.01
23.45

M2 UNITS
0.08 ohms/sq
4.83 ohms
angstrom
N_W
951

UNITS
ohms/sq
ohms

COMMENTS: BLK is silicide block.


CAPACITANCE PARAMETERS
TS
Area (substrate)
um^2
Area (N+active)
um^2
Area (P+active)
um^2
Area (poly)
um^2
Area (metal1)
um^2
Area (metal2)
um^2
Area (metal3)
um^2
Area (metal4)
um^2
Area (metal5)
um^2
Area (r well)
um^2
Area (d well)
um^2
Area (no well)
um^2
Fringe (substrate)
um
Fringe (poly)
um
Fringe (metal1)
um
Fringe (metal2)
um
Fringe (metal3)
um
Fringe (metal4)
um
Fringe (metal5)
um

N+

P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNI

969 1234 101 34 14 9 7 5 4

129

8517 53 20 14 11 9 8

aF/

8275

aF/
64 17 10 7 5 4

aF/

35 14 9 6 5

aF/

36 14 9 6

aF/

37 14 9

aF/

36 14

aF/

35

1039

953

aF/
aF/

562
140

aF/
aF/

196 229

CIRCUIT PARAMETERS
Inverters
Vinv
Vinv
Vol (100 uA)
Voh (100 uA)
Vinv
Gain
Ring Oscillator Freq.
D1024_THK (31-stg,3.3V)
DIV1024 (31-stg,1.8V)
Ring Oscillator Power
D1024_THK (31-stg,3.3V)
DIV1024 (31-stg,1.8V)

130 aF/

53 36 29 24 21 19

aF/

68 38 29 23 19 18

aF/

49 34

22 20

aF/

45 35 27 23

aF/

54 34 30

aF/

63 43

aF/

66

aF/

UNITS
K
1.0
1.5
2.0
2.0
2.0
2.0

0.74
0.79
0.08
1.62
0.83
-24.67

volts
volts
volts
volts
volts

302.91 MHz
377.13 MHz
0.07 uW/MHz/gate
0.02 uW/MHz/gate

COMMENTS: DEEP_SUBMICRON

T92Y SPICE BSIM3 VERSION 3.1 PARAMETERS


SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8
* DATE: May 21/09
* LOT: T92Y
WAF:
* Temperature_parameters=Default
.MODEL CMOSN NMOS (
+VERSION = 3.1
TNOM
+XJ
= 1E-7
NCH
+K1
= 0.5789116
K2
+K3B
= 0.0297124
W0
+DVT0W = 0
DVT1W
+DVT0
= 1.2953626
DVT1
+U0
= 293.1687573
UA
+UC
= 7.061289E-11 VSAT
+AGS
= 0.4764546
B0
+KETA
= -0.0138552
A1
+RDSW
= 105.6133217
PRWG
+WR
= 1
WINT
+XL
= 0
XW
+DWB
= -3.690793E-9 VOFF
+CIT
= 0
CDSC
+CDSCB = 0
ETA0
+DSUB
= 0.0442223
PCLM
+PDIBLC2 = 2.701992E-3
PDIBLCB
+PSCBE1 = 4.494778E10
PSCBE2
+DELTA = 0.01
RSH
+PRT
= 0
UTE
+KT1L
= 0
KT2
+UB1
= -7.61E-18
UC1
+WL
= 0
WLN
+WWN
= 1
WWL
+LLN
= 1
LW
+LWL
= 0
CAPMOD
+CGDO
= 8.58E-10
CGSO
+CJ
= 9.471097E-4
PB
+CJSW
= 1.905901E-10 PBSW
+CJSWG = 3.3E-10
PBSWG
+CF
= 0
PVTH0
+PK2
= 2.247806E-3
WKETA
+PU0
= -4.0206081
PUA
+PVSAT = 2E3
PETA0
*
.MODEL CMOSP PMOS (
+VERSION = 3.1
TNOM
+XJ
= 1E-7
NCH
+K1
= 0.5722049
K2
+K3B
= 4.2763642
W0
+DVT0W = 0
DVT1W
+DVT0
= 0.6234839
DVT1
+U0
= 109.4682454
UA
+UC
= -1E-10
VSAT
+AGS
= 0.3115024
B0
+KETA
= 0.0298609
A1
+RDSW
= 199.1594405
PRWG
+WR
= 1
WINT
+XL
= 0
XW
+DWB
= -2.481453E-9 VOFF
+CIT
= 0
CDSC

9103
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

27
2.3549E17
1.110723E-3
1E-7
0
0.3421545
-1.21942E-9
1.676164E5
1.617101E-7
1.09168E-3
0.5
2.885735E-9
-1E-8
-0.0948017
2.4E-4
2.665034E-3
1.746064
-0.1
3.672074E-8
7
-1.5
0.022
-5.6E-11
1
0
0
2
8.58E-10
0.8
0.8
0.8
-5.105777E-3
-5.071892E-3
-4.48232E-11
1E-4

LEVEL
TOX
VTH0
K3
NLX
DVT2W
DVT2
UB
A0
B1
A2
PRWB
LINT
DWG
NFACTOR
CDSCD
ETAB
PDIBLC1
DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA
PUB
PKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

49
4.1E-9
0.3694303
1E-3
2.037748E-7
0
0.0395588
2.325738E-18
2
5E-6
0.3303025
-0.2
1.715622E-8
2.754317E-9
2.1860065
0
6.028975E-5
0.3258185
0.9787232
0.0122755
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-12
0.3726161
0.1369758
0.1369758
-1.1011726
5.324922E-4
5.018589E-24
-2.090695E-3

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

27
4.1589E17
0.0219717
1E-6
0
0.2479255
1.31646E-9
1.054892E5
4.729297E-7
0.3886886
0.5
0
-1E-8
-0.0935653
2.4E-4

LEVEL
TOX
VTH0
K3
NLX
DVT2W
DVT2
UB
A0
B1
A2
PRWB
LINT
DWG
NFACTOR
CDSCD

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

49
4.1E-9
-0.3823437
0.1576753
1.104212E-7
0
0.1
1E-21
1.5796859
1.446715E-6
0.4010376
-0.4947034
2.93948E-8
-1.998034E-8
2
0

+CDSCB
+DSUB
+PDIBLC2
+PSCBE1
+DELTA
+PRT
+KT1L
+UB1
+WL
+WWN
+LLN
+LWL
+CGDO
+CJ
+CJSW
+CJSWG
+CF
+PK2
+PU0
+PVSAT
*

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

0
1.215087E-5
-1E-5
7.999986E10
0.01
0
0
-7.61E-18
0
1
1
0
7.82E-10
1.214428E-3
2.165642E-10
4.22E-10
0
1.095907E-3
-1.0674346
50

ETA0
PCLM
PDIBLCB
PSCBE2
RSH
UTE
KT2
UC1
WLN
WWL
LW
CAPMOD
CGSO
PB
PBSW
PBSWG
PVTH0
WKETA
PUA
PETA0

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

3.515392E-4
0.96422
-1E-3
8.271897E-10
8.1
-1.5
0.022
-5.6E-11
1
0
0
2
7.82E-10
0.8461606
0.8
0.8
5.167913E-4
0.0133232
-4.30826E-11
1E-4

ETAB
PDIBLC1
DROUT
PVAG
MOBMOD
KT1
UA1
AT
WW
LL
LWN
XPART
CGBO
MJ
MJSW
MJSWG
PRDSW
LKETA
PUB
PKETA

=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=

-4.804338E-4
3.026627E-3
1.117016E-4
0.0190118
1
-0.11
4.31E-9
3.3E4
0
0
1
0.5
1E-12
0.4192076
0.3202874
0.3202874
9.5068821
-3.648003E-3
1E-21
-1.822724E-3