Fig.

1: MOS Current Mirror

cur mir 1
PROBLEM DESCRIPTION
Design a simple MOS current mirror to meet the following requirements: (a) Transistor at the output stage must operate in
the active region for values of output voltage (VOU T ) to within 0.2 V of ground, (b) The output current must be 50 A and
(c) The output current must change less than 2% for a change in output voltage of 1 V.
SOLUTION
The output current, IOU T = 50A and VOU T = Vov2 = 0.2V .
NMOS device paramter,
F
1
1
2
kn0 = n Cox = n 3.9 8.864 1014 cm
tox
= 450 3.9 8.864 1014 8010
8 = 194.5 A/V
The output0 current,
k
IOU T = 2n (W/L)(VGS2 VT )2 (1 + 4VDS ) = I0 (1 + 4VDS )
where is channel length modulation parameter.
IOU T I0
= (1 + 4VDS )
I0
Given that output current must change less than 2% for 1 V change in output voltage.
4VDS 0.02
4VDS = 1V
0.02
6
IOU T = 50 106 = 194.510
(W/Lef f )2 (VGS2 VT )2
2
For M2 Vov = VGS2 VT = 0.2V
So, (W/Lef f )2 = (W/Lef f )1 = 12.85
d /dVDS
0.02
= V1A = dXL
ef f
Lef f 1m
Lef f = Ldrawn 2Ld Xd
Ldrawn = Lef f + 2Ld + Xd = 1 + 2 0.09 + 0 = 1.18m
= 1.2 m
The minimum length is 1.2 m minimizes the device area. W = 12.85 1.2 = 15.8 m
DESIGN OUTCOME
TABLE I: Circuit Components
No.
1
2

Component
W1 = W2
Ldrawn1 = Ldrawn2

Value
15.8 m
1.2 m

ASSUMPTIONS
1) Transistors M1 and M2 are identical.
2) Device parameters are assumed for n-Well process with 0.4m minimum allowed gate length
1
Transistors M1 and M2 are identical.
Xd = 0
2
n = 450cm /V -s
10
tox = 80 10
m