GATE - 1996 Electronics and Communication En; » Toon ofthe owing qty 11.20) (0 the mest ponive potenti sabe in he Goxt= 30) (4) the most negstive potential available inthe 11 In the given figure, A,, A, and A, are ideal cre dnmeters Ava A, tend 3 A and.t'n 8 HotonorisopecingsetMbtat none respectvely, then A, should read forward ba greater than the gainer oe forward bias, then itis operating in the . - Quoin (@) forward active mode st) (®) reverse saturation ot] turation mode & | ‘| reverse active mode Oe woe (@) forward saturation mode oA eA ‘LF The common-emitter short-circuit current gain B of a transistor (7A (a) None of these (a) is a monotonically inereasing function of the 1.2 In the circuit of the given figure, assume that the collector cunient le diodes are ideal and the meter is an average () is a monotonically decreasing function of le indicating ammeter. The ammeter will read (©) increases with 1. , for low I, reaches a maximum and then decreases with further so BLO increase in I, cS | (@) is not a function of I, 1.8 A n-channel silicon (E, = 1.1 eV) MOSFET was fabricated using x + poly-silicon gate and the threshold voltage was found to be 1 V. Now, if @ i the gate is changed toy" poly-silicon, other things 2 ue 7 o ra remaining the same, the new threshold voltage Osa @ should be = x (@ -01V ov 1.3 The number of independent loops for a network © lov (@ dav with nodes and b branches is 1.9 The circuit shown in the figure is that of @n-1 ve @ b-n (c) b-n+1 (d) independent of the number of nodes 14 A lossless transmission line having 500 charateristic impedance and lengh 2/4 is short circuiged at one end and connected to an ideal fe) a nonanverting amplifier voltage source of 1 V at the other end i) anine The current drawn from the voltage source is (©) anosci @o (b) 0.02.4 (aya Schmitt trigger Oe vena) Eee LO. Schottky clamping is resorted in TTL gates 1.5 The p-type substrate in a conventional pn-junction (0) to 1eelice propagation delay isolated integrated circuit should be connected to (08 to inevease nose margins (a) nowhere, ie. left floating (0) ty increase packing density ease fan-out (8) ade ground potential ts) tain1.11 A pulse train can be delayed by a finite mursber fof clock periods using (@) a serial-in erial-out shift register (@ a seria-in parallel-out shift register (©) a parallebin serial-out shift register {(@ a paralel-in parallel-out shift register 132A 12-bit ADC js operating with a 1 4: sec clock period and the total conversion time is seen to be 14 uses. The ADC must be of the (a) flash type @) counting type (6) intergrating type (@) successive approximation type 1113 The total number of memory accesses involved, (inclusive of the op-code fetch) when an 8085 processor executes the instruction LDA 2003 is i w2 3 wa 1.14 The trigonometric Fourier series of an even function of time does not have the (a) de term (H) cosine terms (0) sine terms (@) odd harmonic terms 1.15. The Fourier transform of areal valued time signal has (@) odd symmetry @) even symmetry (©) conjugate symmetry @ nosymmetry 1.16 A rectangular pulse of duration T is applied toa filter matched to this input. The out putof the filter isa (0) rectangular pulse of duration T () rectangular pulse of duration 2T (© triangular pulse (@) sine function 1.17 The image channel rection ina supetheterodyne receiver comes from (a) IF stages only (8) RF stages only (6) detector and RF stages only (@ detector RF, and IF stages 148 The capacitance per unit length and the ‘characteristic impedance of a lossless transmission line are C and Zo respectively. The velocity of a travelling wave on the transmission line is 1 @z,c o Ze Z, é oe oz 119 A transverse electromagnetic wave with circular polarisation is received by a dipole antenna. Due to polarisation mismatch, the power transfer efficiency from the wave to the antenna is reduced to about (a) 50% (H) 35.3% (o) 25% (0% 1.20 A metal sphere with 1 m radius and a surface charge density of 10 Coulombs/m? is enclosed in, a cube of 10 m side. The total outward electric displacement normal to the surface of the cubeis, (@ 40xCoulombs (6) 10x Coulombs (©) SxCouloms (a) None of these 2. For each of the following questions (2.12.20) four alternatives a, b, ¢ and d are given (20 x2=40) 2.1 In the circuit shown in the given figure N is a finite gain amplifier with a gain of ka very large input impedance, and a very low output impedance. The input impedance of the feedback amplifier with the feedback impedance Z connected as shown will be 1 @ z(1-t) ® Za-bh a ©» 7-5 22 The inverse Laplace transform of the function 545 (s+(s+3) § (a) 2e%-e* 2etee™ (©) et-2e* (a) ete 23 The voltages Vc, » Voz » and Veg across the capacitors in the circu inthe given figure, under steady state, are respectively. ( B0v, 48Vv,22V (a) 20v, 12v, 8V (a) 80V, 32V, 48V (© 20V, 8v, 1224 A.uniform plane wave in air isntormally incident 2.9 Value of R in the oscillator circuit shown in the on infinitely thick slab. Ifthe refractive index of 0 index 0 siven figure, so chosen that it just oscillates at a theglssslabis 15, then the percentage of incident angular itesuency ole, Th sles lana power that is reflected from the aie-giass interface required value of R will respectively be 7 (@) 0% 4% (©) 20% (@) 100% 25 Inabipolar transistor at room temperature. if the emitter current is doubled the voltage across its base-emitter junction (@) doubles (0) halves . (c) increases by about 20 mV (a) 10° rad/see, 2 « 10 (d) decreases by about 20 mV (b) 2 104 rad/sec, 2 = 10° (c) 2 « 10* rac sc, 10° a6 Anrgetantrtasatctactattequnessy 7 tetia tn of 1 MHz, and common emitter short circuit low- frequency current gain 80 of 200. It unity gain 2.10 A zener diode in the circuit shownin the figure is has a knee current of 5 mA, and frequency fT and the alpha cut-off frequency re and a maximum respenctively are 7 fa allowed power dissipation of 300 mW. What are the minimum and maximum load currents that (@) 200 Miz, 201 MHz ‘i ° OLIC 196 hat can be drawn safely from the circuit, keeping the Deere eure output voltage V, constant at 6 V ? (@) 201 MHz, 200 MHz 227 Asilicon n MOSFET has a threshold voltage of 1 V and oxide thickness of AO. jes Ie, (6i0,) = 3.9, ¢, = 8.854 x 104 F/om, 4=1.6« 10" C] (2) OmA,130mA —(&) SmA.110mA The region under the gate is ion implanted for () WmA55mA —(@) 60 mA, 180mA threshold voltage tailoring. The dose and type of the implant (assumed to be a sheet charge at the interface) required to shift the threshold voltage 2.11 A dynamic RAM cell which hold 5 V has to be refreshed every 20 m secs, so that the stored voltage does not fall by more than 0.5 V. Ifthe cell to-1Vare i has a constant discharge current of 0.1 pa, the (@) 1.08 x 107?/em*, p-type storage capacitance of the cell is (®) 1.08 x 10!/em?, n-type (a) 4x 10°F ) 4x 10°F (0) 5.4.x 10"/m?, p-type (0 4x 10°F (@) 4x 108F x10!"/em? n-type (8) 54 x 100 /em’, notype 242 A 10-bit ADC witha fall scale output voltage of 10.24 V is designed to have a + LSB/2 accuracy. Ifthe ADC is calibrated at 25°C and the operating, a temperature ranges from 0°C to 50°C , then the the overall transconductance g,. [2 4] isgiven rosa ienpernrecetice of he ADC = a. should not exceed (@) +200nV/°C () +4000 V/°C a (© £600nV/2C — d) £8000 V/°C > Ml as A meray system of size 6 Kyte equ a to be designed using memory chips which have “ TDaddress lines and data lines each. The number of such chips required to design the memory system 4) Bm ) 058, @2 we os @ 16 28 A Darlington stage is shown in the figure is. Ifthe transconductance of Q, isg,,, 2nd Q, is then by214 The following sequence of instructions are exeutted by an 8085 microprocessor io) LXE SP, 27 FF yoo CALL i006 106 POP TT ‘The contents of the stack pointer (SP) and the HL, register pair on completion of execution of these instructions are (a) SP 7 FE, HL = 1003 37 FD, HL = 1003, 7 PE, HL = 1006 7 FD, HL = 1006, 2.45 The number of bits in a binary PCM system is increased from m tom + 1. Asa result, he signal to quantization noise ratio will improve by a factor wer zene (@) which jsindependent of n 2.16 The autocorrelation function of an energy signal has (@) nosymmetery (0) conjugate symmetry (©) odd symmetry (d) even symmetry 2.17 AnFM signal witha modulation index9 is applied toa frequency tripler. The modulation index in the output signal will be @O (b) 3 9 (a) 27 228 The critical frequency of an ionospheric layer is 10 MHz. What is the maximum launching angle from the horizon for which 20 MHz wave will be reflected by the layer ? (a) 0° (W) 30° (0 45° (a) 90° 2.19 A.1 km long microwave link uses two antennas ‘each having 30 dB gain. Ifthe power transmitted by one antenna is 1 W at 3 GHz, the power received by the other antenna is approximately (@) 98.6. (b) 768. (0) B84 .W @) 552 uW 2.20 Some unknown material has. conductivity of 10° mho/m and a permeability of 4x x 107 H/m. The skin depth for the material at 1 GHz is (@) 15.9 pm. (i) 209 um (©) 25.9 um (a) 30.9 um 3. Inthe following questions (3.1 -3.5), match each ofthe items A, B and C with an appropriate item on the right. (6x3=15) 341, In the circuit shown in the figure is (@) - (), assuming initial voltage and capacitors and currents through the inductors to be zero at the time of switching (t = 0), then at anytime #> 0. o (0) Current increases 7 o "1, ome 7 ad monotonically with time (2) Current decreases monotonically sith time @) Current — remains constant at V/R (4) Current first increases then decreases (5) No current can ever flow 3.2 (a) Cascade amplifier (1) does not provide (&) Differential amplifier (6) Darlington pair common-emitter amplifier 3.3 (@) A shift register can be used (©) Amultiplexer can be used (©) Adecoder can be used 3.4 (a) Captureeeftect is a characteristics of (&) Granular noise occurs in (©) Guard band is, required in current gain 2) isa wideband amplifier (3) has very low input impedance and very high current gain (4) has very high input impedance and very high current gain (5) provides high common mode voltage rejection (2) for code conversion (2) to generate memory chip select (3) for parallelto-serial conversion (@ as a many-to-one switch (6) for analog-to-digital conversion (1) an AM system (2) an FM system (3) aDM system (4) a FDMsystem (8) aPCMsystem (6) aTDMsystem3.5 (a) SSB Modulation (1) ‘Transmission line (©) Model dispersion (3) Faraday’s law veg =0 (2) Hilbert transform, (9) Absence of magnetic monopoles (8) Waveguides (©) Phase-locked loop ANSWERS 110) 12 130 14 15 6) 4.70 LE 1.94) L10@ LNO LRM 130) LH® 1250 1160 LO 1186) L9@ 1.200 210) 220) 230) 240) 25%) 2.6@ 2.7) 2.80) 2.9%) 21060) ZUG 2126) 2] 2MW) 2B] 216M) 217M 218%) 219) 2.20) EXPLANATIONS aa A= JAbead = \g?ya?=5A 1s 1.2 The meter will ead during positive half for half-wave rectifier V,_ 4 oa Vie GR = RIOK 7 _ MA: Hence none of the answer is correct as eurrent is given in A and notin mA, 14 A short circuited line of length 4/4 shows infinite impedance at the other end, hence the current is zero. 16 Ver= Vee *Vew AsVyisincreased, V-gis pushed to the negative region, I; start even from the negative region and transistor operates in the reverse active mode. 17 Bice = Bp it the active region. In the saturation region B.,.4 8 less then Pi, 1.11 Since delay has to be of finite number of clock pulses. 12 Flashtype 1x, where + is clock period. Counter type (2"=1) + = 4095 sec. Integrating type > 4095 4. secs, Successive Apporximation type += 12,¢secs. 1 117 Response cut-off resonance, Ay = ——— 1+ y? Q? o @= image frequency. So the first detector gives some image rejection which may be sufficient at low tuned frequencies. As this may be insulficient at high frequencies, RF stages may be added. 1.19 Polarisation mismatch means that ifthe wave is left circularly polarised, the antenna is right circularily polarised and power transfer is 0. 1.20 Charge enclosed by the cube, Qa4nxtx10=400 Q 40 = — £042 C/m? ‘Area of one face 100 2 5 A 22 FO" Gpgas a1 53 59 seh. '. LE"! F(s) = 2e 23 In steady state, capacitors are open and inductances are short. For,