Semiconductor Materials: Semiconductor: Material having electrical conductivity intermediate between metals and insulators. ‘The beauty of a semiconductor material is that we can vary it’s conductivity by: a. Changing it’s temperature b. Shining light on it c. Selectively introducing impurity atoms into it’s crystalline structure ****** => DOPING * See periodic chart - arsenic - phosphorus - boron Question: What does varying the conductivity do?? Answer: For low electric fields, Fa I Vv Za J=0E (Ohm's Law) WH ya J=current density Leds (amp/em’) E _ L = conductivity (1/Q-cm) E = electric field A (cross sectional area) (V/cm) © For undoped silicon, 6 ~ 1/3.16 X 10° (Q-cm)!VA=0 (VIL) Resistance of material => R =p (L/A) p= resistivity (Q-cm) So, R = (1/o)(L/A). Solving for 0, o=(L/RA) Substituting sigma into I/A equation... I/A = (L/RA)(V/L), reducing and solving for V...... V=IR. Look at Ohm’s Law: J = E ....as 6 increases J increases! We can increase the conductivity of silicon by many orders of magnitude by DOPING. Silicon is the dominant semiconductor material used today. Other semiconductors — Column IV elements are the “elemental semiconductors” — Si (silicon), Ge (germanium), C (carbon). Compounds of elements from columns III and V - GaAs (gallium arsenide), InP (indium phosphide), GaN (gallium nitride) Compounds of elements from columns II and VI - CdSe (cadmium selenide), ZnS (zine sulfide) Compounds of elements from columns IV ~ SiC (silicon carbide), SiGe (silicon germanium) The above three compounds are called “compound semiconductors”Jord yeroua8 Aron smu ‘sy*-lep*ty soronpaoonues Aorfe amp splark sy usu! nyoo am snyd eD pue Ty syuowtaya YT UUINTOD ay) JO UoNeUIquIOD jeUOHoRy Jojonpuootwes punoduros JA-]] oy) spla1k ay, yuawrezo TA uurnjoo oxy snd 2 J] UuUNJOd ay ‘syeH Jo}ONpUOSTUIEs punodwios A-[]] oy spjatd sy quowrala ou snyd eD uowzo TT uUNIOO ay, “AI WUINJOD Jo apts JoyyIe WoIy soUR}SIP UNIO PIGEL OPOLad UE suoWE|a Jo UONUTGUIOD v are JO ‘oIQRY, SIPOLIAg od 1@ ad UL 3H #8 8 zw 18 08 - aL as us uy PO a Is os ov 8h 2s sy 29 % uz ve ee ze le 0€ Ss d Is Iv aw or SI vr €I a oO N 2 a a 8 L 9 s , A A AL 1 IL “swuawd}E| at JO UeYD Ipouog parwrAaiqqy Z"] aEqEL 3dOUd TWIH3LVW TWuaNa5 ee S see 20) apyin: ‘opinyyor aptusyas apyins pl pl a apruows ‘plus aprydse apruown ‘puss apiydso api apruownue ‘opruasze aptudsoudSemiconductor Material Structure 1, The Crystalline Lattice - A crystalline solid’s atoms are arranged in a periodic fashion. There is some basic arrangement of atoms that is repeated throughout the entire solid. This basic arrangement is called the unit cell. The periodic arrangement of atoms in a crystal is called the lattice. The smallest unit cell that can be repeated to form the lattice is called a primitive cell. 2. Other Structures — a, Amorphous - no long-range order in the positioning of the atoms within the material. Used in thin-film transistor switches in LCD’ b. Polycrystalline — intermediate case between crystalline and amorphous. Composed of crystalline subsections that are disjointed or misaligned relative to each other. Used as gate material in MOSFET’s and as solar cells. ‘The vast majority of the active regions of semiconductor devices are made of crystalline materials. More on the Crystalline Materials: Crystalline structures are differentiated by the shape of their unit cell. The only type of crystalline structure we will be concerned about is the Cubic Lattice. Cubic Lattice - The simplest 3-D lattice is one in which the unit cell is a cubic volume -> L = W = H = a, where “a” is called the “lattice constant”. There are 4 subtypes of cubic lattices we will be concerned about. They are: Simple cubic Body-centered cubic Face-centered cubic Diamond (Silicon has a DIAMOND structured unit cell) Check out this website: http://jas.eng.buffalo.edu/educationst swatod og iy ap UIA switOg “20TMeI 341 oy 51 sone; aa Jf 2 pur) 4 pur 28 04 (eORMEDPL [90 HUA MOU E “AULIVEN —4., Sf (199 Hun 94h ft eH YOR q Pde w SIOIIZA BUyAP WE OM IY won -o Wavelpe qi pareys 12us09 YOeD HE WO WE SEH {120 ay) 2689 Kr2A2 Ut ‘1eAoMofy “SuLI0} Kubut oe] Ue SWOLE UB2MIEG WOREIUO pue saoueisyp aq1 ‘aumnjon © ut suiove Busseyd Jo SKem wuoz0}}I) Kuew aze 3124 2oukg “201107 24 parRED st FeISAIO & UT SWHONE Jo TuaMaBUELE opted OYE, (e) se yons ‘suoifa1 ‘auytershso-a@@uis uarelpe Jo ma1A 2Idorso19eW a10W & Aq PoreAasn} “41 51 aamonns auyershzhod (2) searaym ‘suLOTe a4) JO SMMAIA 244095 orn £q payensny! ae euayeu snoydi ) pue auyerstio (e) nuawaduene suo 01 Buypiooze payysseD ‘Spyos Jo sadAy aauy) —t-t aang sho amp Jo ud vonnp SAOLINGNOIWAS JO HIMOYD ANY SHULYIIOd WISAYD 1 PCH ae ETTio’ silicon of a ‘of the oxide slanice. Since the distances ine yoase tat... of the ‘As an exam- rent of atoms ared with ad- ifthe unit cett cell identical deif the \ttice is called not the most athe fact that sentative vol- >etween near +s holding the lume filled by rngement. But properties of electrons that ssnotonly the perties. Crystal Properties and Growth of Semiconductors LI Ee Bi Simple cubic Body-centered cubic __-Face-senteredcubie 1.2.2. Cubic Lamtces ‘The simplest three-dimensional lattice is one in which the unit cellis a cubic volume, such asthe three cells shown in Fig 1-3. he simple eubic structure (abbreviated sc) has an atom located at each comer of the unit cell. The body- ‘entered cubic (bec) lattice has an additional atom at the center ofthe cube, and the face-centered cubic (fcc) unit cell has atoms at the eight corners and centered on the six faces, Asatoms are packed into the lattice in any of these arrangements, the dis- {ances between neighboring atoms willbe determined by a balance between the forces that attract them together and other forces that hold them apart. We shall dlisuss the nature of these forces fr particular solid in Section 31.1. For now, ‘We can calculate the maximum fraction of the lattice volume that can be filled With atoms by approximating the atoms as hard spheres For example, Fig. 1-4 'Mlustrates the packing of spheres in aface-centered cubic cell of side such that the nearest neighbors touch. The dimension « for acubie unit cel is called the {atice constant For the foc lattice the nearest neighbor distance is one-half the agonal ofa face, or § (a V2.). 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BY TOTHL VOLUME OF WIT Céyp ATOMS, 4x TAPE ea 4 fe wie TT wa mass | 3 ae So a3 24 é Ste 74 oF umer cet 18 Fiece> win ATOMS, THE best (26%) 13 Eupry sPrce.Indexing Procedure for Cubic Crystal Planes: ‘Note where the plane to be indexed intercepts the axes. Record the intercepts in the ordet x,y. 2. b. Invert the intercept values ~ that is, form (I/intercepts)s. c. Using the appropriate multiplier, convert the (L/intercept) set to the smallest possible set of whole numbers. 4d. Enclose the whole-number set in curvilinear bracket, ie. (hkl). - For CUBIC crystals, a plane and the direction normal to the plane have precisely the same indices. Vector r > [00 1] direction Plane (top and bottom planes) >> (0 0 1) planeSilicon Growth Methods Pure silicon ingots: silicon is the 2 most abundant element in the earth’s crust. It never occurs alone (pure) in nature. However, we must begin with pure Si to manufacture Si-based semiconductor devices. Purification process > Silica (SiO) >| Heat +C Impure Si > ca (reduction reaction (chlorinated to which pulls O from Si) liquefy) SiCl, + 2H > DSICL, > | Distillation process | > Ultra-pure SiC, > 4HCI + Si (reduction reaction) > Ultra-pure polycrystalline Si The natural structure of Si is polycrystalline. The most common method of yielding large single-crystals of Si is known as the Czochralski (CZ) pulled method, See illustration. The result is a silicon ingot. Dopants are added to the polycrystalline melt to yield homogeneously doped Si ingot. But, when a material freezes the concentration of impurities incorporated in the solid is usually smaller than that of the liquid. Concentration of impurities in the solid = Cd/CQ=ka Concentration of impurities in the melt ka = “segregation constant” Example: A Si ingot is to be CZ-pulled and should contain 1016 phosphorus (P) atoms/em3. Given kd = 0.35 for phosphorus, what concentration of P should be added to the melt? kg=CJ/C, Cs = 10" cm? C= 10'0.35 C\=2.85 X 10" atoms/cm?The crucible initially contains 50 kg of molten Si. How many grams of P should be added to the melt? Given: density of Si = 2.53 gm/cm? Atomic weight of P = 30.975 gm/mole Avagadro’s number = 6.023 X 10” atoms/mole 50,000gm Mass/ Density = Volume, 2.53gm/ cm .976X10* cm # atoms required..... 2.85% 10"° Patoms / em’ x1.975x10* em? = 5.63x10™ Patoms mass of P require 20 : 5.63310 Patoms x30.975gm/ mole _ 95 os mg 6.02310" atoms/ mole So, approximately 0.03 grams of P is needed to done 50,000 grams of Si for a typical impurity doping concentration of 10'° cm’,~fowuuwo) wapoUs «Jo YUABOWNY (6) “Scone Hayyad Yash Moos HAL 68 Me