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RoHS-compliant Product
Advanced Power
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Electronics Corp.
N-CH BVDSS
D1/D2
40V
RDS(ON)
S1
28m
ID
G1
S2
15A
P-CH BVDSS
G2
TO-252-4L
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
-40V
RDS(ON)
42m
ID
-12A
D1
D2
G1
G2
S1
S2
Parameter
Rating
N-channel
Units
P-channel
VDS
Drain-Source Voltage
40
-40
VGS
Gate-Source Voltage
16
16
ID@TA=25
15.0
-12.0
ID@TA=70
12.0
-10.0
50
-50
IDM
PD@TA=25
10.4
0.083
W/
TSTG
-55 to 150
TJ
-55 to 150
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
12
/W
Rthj-a
110
/W
1
200809235
AP4525GEH
o
Symbol
Parameter
Test Conditions
Min.
Typ.
40
0.03
V/
VGS=10V, ID=6A
28
VGS=4.5V, ID=4A
32
BVDSS
BVDSS/Tj
RDS(ON)
VGS=0V, ID=250uA
Max. Units
VGS(th)
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=6A
IDSS
VDS=40V, VGS=0V
uA
25
uA
Gate-Source Leakage
VGS=16V
30
uA
ID=6A
14
nC
IGSS
Qg
Qgs
Gate-Source Charge
VDS=20V
1.5
nC
Qgd
VGS=4.5V
nC
td(on)
VDS=20V
ns
tr
Rise Time
ID=6A
20
ns
td(off)
RG=3,VGS=10V
20
ns
tf
Fall Time
RD=3.3
ns
Ciss
Input Capacitance
VGS=0V
580
930
pF
Coss
Output Capacitance
VDS=25V
100
pF
Crss
f=1.0MHz
70
pF
Rg
Gate Resistance
f=1.0MHz
Min.
Typ.
IS=15A, VGS=0V
1.8
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
IS=6A, VGS=0V
20
ns
Qrr
dI/dt=100A/s
15
nC
AP4525GEH
P-CH Electrical Characteristics@T j=25oC(unless otherwise specified)
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Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
-40
BVDSS/Tj
-0.03
V/
RDS(ON)
VGS=-10V, ID=-5A
42
VGS=-4.5V, ID=-3A
60
-0.8
-2.5
VGS=0V, ID=-250uA
VGS(th)
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-5A
IDSS
VDS=-40V, VGS=0V
-1
uA
-25
uA
Gate-Source Leakage
VGS=16V
30
uA
IGSS
Qg
ID=-5A
24
nC
Qgs
Gate-Source Charge
VDS=-20V
nC
Qgd
VGS=-4.5V
nC
td(on)
VDS=-20V
8.5
ns
tr
Rise Time
ID=-5A
15
ns
td(off)
RG=3,VGS=-10V
27
ns
tf
Fall Time
RD=4
25
ns
Ciss
Input Capacitance
VGS=0V
770
1230
pF
Coss
Output Capacitance
VDS=-20V
165
pF
Crss
f=1.0MHz
115
pF
Rg
Gate Resistance
f=1.0MHz
Min.
Typ.
Max.
Units
IS=-12A, VGS=0V
-1.8
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
trr
IS=-5A, VGS=0V
20
ns
Qrr
dI/dt=-100A/s
16
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.N-CH , P-CH are same .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP4525GEH
N-Channel
50
50
T A = 25 C
40
10V
7.0V
5.0V
4.5V
T A = 150 C
40
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10V
7.0V
5.0V
4.5V
30
20
V G =3.0V
30
20
V G =3.0V
10
10
0
0
120
ID=4A
T A =25 o C
1.6
Normalized RDS(ON)
RDS(ON) (m )
100
ID=6A
V G =10V
80
60
1.2
40
0.8
20
2
25
10
50
75
100
125
150
T j , Junction Temperature ( o C)
14
12
10
IS(A)
T j =150 o C
T j =25 o C
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1.2
1.4
Reverse Diode
1.6
-50
50
100
150
T j , Junction Temperature ( C)
AP4525GEH
N-Channel
f=1.0MHz
1000
12
C iss
I D =6A
www.datasheet4u.com V =20V
DS
C (pF)
C oss
100
C rss
10
0
0
10
15
20
13
17
21
25
29
ID (A)
10
100us
1ms
10ms
100ms
1s
DC
T A =25 o C
Single Pulse
0.1
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
0.01
0.1
10
100
0.00001
0.0001
0.001
0.01
0.1
50
VG
V DS =5V
ID , Drain Current (A)
40
T j =25 o C
T j =150 o C
QG
4.5V
30
QGS
QGD
20
10
Charge
0
0
AP4525GEH
P-Channel
50
50
-10V
-7.0V
-5.0V
-4.5V
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40
T A = 150 C
40
30
V G = - 3.0V
20
-10V
-7.0V
-5.0V
-4.5V
T A = 25 C
30
20
V G = - 3.0V
10
10
0
0
1.6
200
I D = -3 A
I D = -5A
V G = -10V
T A =25 o C
170
Normalized RDS(ON)
RDS(ON) (m)
1.4
140
110
80
1.2
1.0
50
0.8
20
2
25
10
50
75
100
125
150
T j , Junction Temperature ( C)
12
10
-IS(A)
T j =150 o C
T j =25 o C
1.2
0.8
0.4
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Reverse Diode
1.5
-50
50
100
150
T j , Junction Temperature ( C)
AP4525GEH
P-Channel
12
f=1.0MHz
10000
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I D = -5 A
V DS = - 2 0 V
1000
C (pF)
C iss
C oss
C rss
100
10
0
12
16
20
13
17
21
25
29
100
Duty factor=0.5
10
-ID (A)
100us
1ms
1
10ms
100ms
1s
DC
T c =25 C
Single Pulse
0.1
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Single Pulse
0.01
0.1
10
100
0.00001
0.0001
0.001
0.01
0.1
50
VG
V DS =-5V
-ID , Drain Current (A)
40
T j =25 o C
QG
T j =150 o C
30
-4.5V
QGS
QGD
20
10
Charge
0
0
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Millimeters
SYMBOLS
MIN
NOM
MAX
6.40
6.6
6.80
5.2
5.35
5.50
9.40
9.80
10.20
2.40
2.70
3.00
1.27 REF.
P
S
E3
C
M
R
D
0.50
0.65
0.80
E3
3.50
4.00
4.50
0.80
1.00
1.20
0.40
0.50
0.60
2.20
2.30
2.40
0.45
0.50
0.55
0.00
0.075
0.15
0.90
1.20
1.50
5.40
5.60
5.80
4525GEH
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