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2 472 254

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H01L 45/00 (2006.01)


B82B 1/00 (2006.01)

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(21)(22) : 2011146089/07, 14.11.2011


(24) :
14.11.2011

(45) : 10.01.2013 . 1

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: WO 2010085225 , 29.07.2010. WO
2011000316 A1, 06.01.2011. US 2011073828 A,
31.03.2011. US 2008090337 A1, 17.04.2008. RU
2343587 C2, 10.01.2009. RU 94016378 A1,
27.08.1996.

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RUSSIAN FEDERATION

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RU

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2 472 254

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C1

(51) Int. Cl.

H01L 45/00 (2006.01)


B82B 1/00 (2006.01)

FEDERAL SERVICE
FOR INTELLECTUAL PROPERTY

(12) ABSTRACT

OF INVENTION

(21)(22) Application: 2011146089/07, 14.11.2011


(24) Effective date for property rights:
14.11.2011

Mail address:
141700, Moskovskaja obl., g.Dolgoprudnyj,
Institutskij per., 9, Moskovskij fizikotekhnicheskij institut (gosudarstvennyj
universitet), Tsentr transfera tekhnologij

R U

2 4 7 2 2 5 4

(57) Abstract:
FIELD: electricity.
SUBSTANCE: device comprises an active layer
arranged between two current-conducting layers,
being in electric contact with them and representing
an oxide of the type ABOx, where the element B is
titanium, or zirconium, or hafnium, and the element
A - a trivalent metal with ion radius, equal to 0.71.2 of ion radius of titanium, or zirconium, or
hafnium. If the element B is titanium, then A is
selected as aluminium or scandium, if the element B
is zirconium or hafnium, then A is selected as
scandium or ittrium or lutecium.
EFFECT: increased stability and recurrence of
switching voltage, resistance in low and high
resistance conditions.
3 cl, 2 dwg

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(54) MEMRISTOR BASED ON MIXED OXIDE OF METALS

.: 3

en

2 4 7 2 2 5 4

(73) Proprietor(s):
Federal'noe gosudarstvennoe avtonomnoe
obrazovatel'noe uchrezhdenie vysshego
professional'nogo obrazovanija "Moskovskij
fiziko-tekhnicheskij institut (gosudarstvennyj
universitet)" (MFTI) (RU)

(45) Date of publication: 10.01.2013 Bull. 1

R U

Priority:
(66) Number(s) and date(s) of filing of the earlier
submitted application(s): 2011131549 28.07.2011

(72) Inventor(s):
Alekhin Anatolij Pavlovich (RU),
Baturin Andrej Sergeevich (RU),
Grigal Irina Pavlovna (RU),
Gudkova Svetlana Aleksandrovna (RU),
Markeev Andrej Mikhajlovich (RU),
Chuprik Anastasija Aleksandrovna (RU)

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1971 [L.O.Chua, IEEE Trans. Circuit Theory, 1971, 18, p.507].
2008
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Hewlett-Packard
,
--
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TiO2 ~5 [D.B.Strukov,
G.S.Snider, D.R.Stewart, R.S.Williams. The missing memristor found. Nature 2008, 453, p.80;
Williams R.S., Yang J., Pickett M., Ribeiro G., Strachan J.P. Memristors based on mixed-metalvalence compounds. W0 2011028208. 10.03.2011].
Pt
[J.J.Yang et al. Memristive switching mechanism for
metal/oxide/metal nanodevices. Nature Nanotechnology 2008, 3, p.429; J.P.Strachan, J.J.Yang et
al. Nanotechnology, 2009, 20, p.485701].
,
,
,
, [S.H.Jo,
.Chang, I.Ebong et al. Nanoscale Memristor Device as Synapse in Neuromorphic Systems.
Nano Lett. 2010, 10, p.1297; Q.Xia, J.J.Yang, Wei Wu et al. Self-Aligned Memristor Cross-Point
Arrays Fabricated with One Nanoimprint Lithography Step. Nano Lett. 2010, 10, p.2909].
[Q.Xia, J.J.Yang,
Wei Wu et al. Self-Aligned Memristor Cross-point Arrays Fabricated with One Nanoimprint
Lithography Step. Nano Lett. 2010, 10, p.2909],
,
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2008 . Pt-TiO2-TinO2n1-Pt [D.B.Strukov, G.S.Snider,
D.R.Stewart, R.S.Williams. The missing memristor found. Nature, 2008, 453, p.80].

.
- [.Krems, Y.V.Pershin, . Di
Ventra. Nano Lett. 2010, 10, p.2674],
[.Berzina, S.Erokhina, P.Camorani et al. Applied materials & interfaces 2009, 1,
p.2115] [Dianzhong W. Manufacturing method for protein structure
quick switch memristor array. CN 101630662. 20.02.2010], [Kirn
.., Cheon J.W., Jang J.-T. Nanoparticle assembly-based switching device. W0 2010062127.
03.06.2010], , (Fe2O4)
[..Kirn, E.Y.Jang, N.J.Lee et al. Nano Lett. 2009, 9, p.2229].
,
.

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- [Wen D., Bai X.
Nanostructure quick-switch memristor and method of manufacturing the same. WO 2011000316.
06.01.2011].

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[Quitoriano N.J., Kuekes P.J., Yang J. Controlled placement of dopants in
memristor active regions. WO 2010085225. 29.07.2010].
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, [Tang D., Xiao
H. Method for forming memristor material and electrode structure with memristance. US
20090317958. 24.12.2009]. ,
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[Williams R.S., Yang J., Pickett M., Ribeiro G.,
Strachan J.P. Memristors based on mixed-metal-valence compounds. WO 2011028208.
10.03.2011]:
TiO2-TinO2n1, n=39,
ZrO2-ZrO2x, =0.010.5,
HfO2-HfO2x, =0.010.5,
TiaZrbHfcO2-(TidZreHff)nO2n1, a+b+c=1, d+e+f=1, n=315,
VO2-VnO2n1, n=39,
VaNbbTacO2-(VdNbeTaf)nO2n1, a+b+c=1, d+e+f=1, n=312,
Nb2O5-NbO2,
Nb2O5 - Nb ( +5 +4),
Nb2O5-NbO2+x, =-0.50.5,
Ta2O5-TaO2,
Ta2O5 - ( +5 +4),
Ta2O5-TaO2+, =-0.50.5,
3-MonO3n1, n=412,
WO3-WnO3n1, n=412,
CraMobWcO3-(CrdMoeWf)nO3n1, a+b+c=1, d+e+f=1, n=415,
Fe2O3-Fe3O4,
Ni2O3-Ni3O4,
Co2O3-Co3O4.

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[Quitoriano N.J., Ohlberg D.; Kuekes P.J., Yang J. Using alloy electrodes to dope
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