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Transys
Electronics
L I M I T E D

TO-92 Plastic-Encapsulated Transistors

2SC1008

TRANSISTOR (NPN)
TO-92

FEATURES

1. EMITTER

Power dissipation
PCM:

0.8

2. BASE

W (Tamb=25)

3. COLLECTOR

Collector current
ICM:
0.7
A
Collector-base voltage
80
V
V(BR)CBO:
Operating and storage junction temperature range

1 2 3

TJ, Tstg: -55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

Parameter

Symbol

unless otherwise specified)

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100A , IE=0

80

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10mA , IB=0

60

Emitter-base breakdown voltage

V(BR)EBO

IE= 10A, IC=0

Collector cut-off current

ICBO

VCB=60 V , IE=0

0.1

Emitter cut-off current

IEBO

VEB= 5 V ,

0.1

DC current gain

hFE

VCE= 2 V, IC=50mA

Collector-emitter saturation voltage

VCE(sat)

IC= 500mA, IB=50 mA

0.4

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB=50mA

1.1

fT

VCE=10V, IC= 50mA

Transition frequency

IC=0
40

400

30

MHz

CLASSIFICATION OF hFE
Rank
Range

40-80

70-140

120-240

200-400