Si4539DY

Dual N- and P-Channel 30-V (D-S) Rated MOSFET

Product Summary
VDS (V)
N-Channel
N Channel

30

P Channel
P-Channel

30
30

rDS(on) (
)

ID (A)

0.037 @ VGS = 10 V

5.8

0.055 @ VGS = 4.5 V

4.7

0.053 @ VGS = 10 V

4.9

0.095 @ VGS = 4.5 V

3.6
D1 D1

S2

SO-8
S1

D1

G1

D1

S2

D2

G2

D2

G2
G1

Top View
S1

D2 D2

N-Channel MOSFET

P-Channel MOSFET

Absolute Maximum Ratings (TA = 25
C Unless Otherwise Noted)

Parameter

Symbol

N-Channel

P-Channel

Drain-Source Voltage

VDS

30

30

Gate-Source Voltage

VGS

20

20

5.8

4.9

4.6

3.9

IDM

30

30

IS

1.7

1.7

2.0

2.0

1.3

1.3

Continuous Drain Current (TJ = 150
C)a

TA = 25
C
TA = 70
C

Pulsed Drain Current

Continuous Source Current (Diode Conduction)a
TA = 25
C

Maximum Power Dissipationa

TA = 70
C
Operating Junction and Storage Temperature Range

ID

PD
TJ, Tstg

Unit
V

W

C

55 to 150

Thermal Resistance Ratings

Parameter
Maximum Junction-to-Ambienta

Symbol

N- or P-Channel

Unit

RthJA

62.5

C/W

Notes
a. Surface Mounted on FR4 Board, t  10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70152.
A SPICE Model data sheet is available for this product (FaxBack document #70555).

Siliconix
S-49534Rev. D, 06-Oct-97

Si4539DY
Specifications (TJ = 25
C Unless Otherwise Noted)
Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static
Gate Threshold Voltage

Gate Body Leakage

Gate-Body

Zero Gate Voltage Drain Current

On State Drain Currentb

On-State

Drain Source On-State

Drain-Source
On State Resistanceb

Forward Transconductance b

Diode Forward Voltageb

VGS(th)

IGSS

IDSS

ID(on)
D( )

rDS(on)
DS( )

gfs
f

VSD

VDS = VGS, ID = 250 mA

N-Ch

1.0

VDS = VGS, ID = 250 mA

P-Ch

1.0

N-Ch

"100

P-Ch

"100

VDS = 30 V, VGS = 0 V

N-Ch

VDS = 30 V, VGS = 0 V

P-Ch

VDS = 30 V, VGS = 0 V, TJ = 55
C

N-Ch

25

VDS = 30 V, VGS = 0 V, TJ = 55
C

P-Ch

25

VDS = 0 V
V, VGS = "20 V

VDS w 5 V, VGS = 10 V

N-Ch

20

VDS v 5 V, VGS = 10 V

P-Ch

20

VGS = 10 V, ID = 5.8 A

N-Ch

0.030

0.037

VGS = 10 V, ID = 4.9 A

P-Ch

0.043

0.053

VGS = 4.5 V, ID = 4.7 A

N-Ch

0.042

0.055

VGS = 4.5 V, ID = 3.6 A

P-Ch

0.070

0.095

VDS = 15 V, ID = 5.8 A

N-Ch

13

VDS = 15 V, ID = 4.9 A

P-Ch

10

IS = 1.7 A, VGS = 0 V

N-Ch

0.8

1.2

IS = 1.7 A, VGS = 0 V

P-Ch

0.8

1.2

N-Ch

18

25

P-Ch

16

25

N-Ch

4.5

P-Ch

N-Ch

2.5

P-Ch

N-Ch

10

16

nA

mA

Dynamica
Total Gate Charge

Qg

Gate Source Charge

Gate-Source

Qgs

Gate Drain Charge

Gate-Drain

Qgdd

Turn On Delay Time

Turn-On

td(on)
d( )

Rise Time

Turn Off Delay Time

Turn-Off

N-Channel
VDS = 15 V
V, VGS = 10 V,
V ID = 55.8
8A
P
Channel
P-Channel
VDS = 15 V, VGS = 10 V, ID = 4.9 A

nC

P-Ch

15

N-Ch

20

16

tr

N-Channel
N
Channel
VDD = 15 V, RL =15 W
ID ^ 1 A
A, VGEN = 10 V,
V RG = 6 W

P-Ch

13

20

N-Ch

27

40

td(off)
d( ff)

P-Channel
VDD = 15 V, RL = 15 W
ID ^ 1
1A
A, VGEN = 10
10 V,
V RG = 6 W

P-Ch

25

40

N-Ch

24

35

P-Ch

15

25

IF = 1.7 A, di/dt = 100 A/ms

N-Ch

45

80

IF = 1.7 A, di/dt = 100 A/ms

P-Ch

60

90

Fall Time

tf

Source Drain Reverse Recovery Time

Source-Drain

trr

Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.

Siliconix
S-49534Rev. D, 06-Oct-97

ns

Si4539DY
Typical Characteristics (25
C Unless Noted)

N-Channel

Output Characteristics

Transfer Characteristics

30

30
VGS = 10, 9, 8, 7, 6, 5 V

TC = 55
C
24

18

I D Drain Current (A)

I D Drain Current (A)

24

4V

12

6
2, 1 V

25
C
125
C

18

12

3V

0
0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS Gate-to-Source Voltage (V)

VDS Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current

Capacitance

0.10

1250

0.08

1000
C Capacitance (pF)

rDS(on) On-Resistance (
)

Ciss

0.06
VGS = 4.5 V
0.04

VGS = 10 V

0.02

750

500

Coss

250
Crss

0
0

12

18

24

30

36

Gate Charge

1.75
rDS(on) On-Resistance (
)
(Normalized)

VGS Gate-to-Source Voltage (V)

2.00

VDS = 15 V
ID = 5.8 A

0
0

12

16

Qg Total Gate Charge (nC)

Siliconix
S-49534Rev. D, 06-Oct-97

12

18

24

30

VDS Drain-to-Source Voltage (V)

ID Drain Current (A)

10

20

On-Resistance vs. Junction Temperature

VGS = 10 V
ID = 5.8 A

1.50
1.25
1.00
0.75
0.5
50

25

25

50

75

100

125

150

TJ Junction Temperature (
C)

Si4539DY
Typical Characteristics (25
C Unless Noted)
Source-Drain Diode Forward Voltage

20

N-Channel
On-Resistance vs. Gate-to-Source Voltage

0.09

10

rDS(on) On-Resistance ( W )

I S Source Current (A)

0.08
TJ = 150
C

TJ = 25
C

0.07
0.06

ID = 
 A

0.05
0.04
0.03
0.02
0.01
0

1
0.3

0.5

0.7

0.9

1.1

1.3

VSD Source-to-Drain Voltage (V)

50

0.2

10

Single Pulse Power

40

0.0

ID = 250 mA

Power (W)

VGS(th) Variance (V)

VGS Gate-to-Source Voltage (V)

Threshold Voltage

0.4

0.2

30

20

0.4
10

0.6
0.8
50

25

25

50

75

100

125

0
0.01

150

0.10

1.00

TJ Temperature (
C)

10.00

Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
Notes:

0.1

PDM

0.1
0.05

t1
t2
1. Duty Cycle, D =

t1
t2
2. Per Unit Base = RthJA = 62.5
C/W

0.02

3. TJM TA = PDMZthJA(t)
4. Surface Mounted

Single Pulse
0.01
104

103

102

101

10

Square Wave Pulse Duration (sec)

Siliconix
S-49534Rev. D, 06-Oct-97

30

Si4539DY
Typical Characteristics (25
C Unless Noted)

P-Channel

Output Characteristics

Transfer Characteristics

30

30
VGS = 10, 9, 8, 7, 6 V

TC = 55
C

18

12

4V

6
2, 1 V

125
C
18

12

3V

0
0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.16

1200

VGS = 4.5 V

0.08

Capacitance
1500

C Capacitance (pF)

rDS(on) On-Resistance (
)

On-Resistance vs. Drain Current

0.20

0.12

VGS Gate-to-Source Voltage (V)

VDS Drain-to-Source Voltage (V)

VGS = 10 V

0.04

Ciss

900

600

Coss

300

Crss

0
0

12

18

24

30

Gate Charge

10

1.75

rDS(on) On-Resistance (
)
(Normalized)

VDS = 15 V
ID = 4.9 A

0
0

12

16

Qg Total Gate Charge (nC)

Siliconix
S-49534Rev. D, 06-Oct-97

12

18

24

30

VDS Drain-to-Source Voltage (V)

ID Drain Current (A)

VGS Gate-to-Source Voltage (V)

25
C

24

5V
I D Drain Current (A)

I D Drain Current (A)

24

20

1.50

On-Resistance vs. Junction Temperature

VGS = 10 V
ID = 4.9 A

1.25

1.00

0.75

0.5
50

25

25

50

75

100

125

TJ Junction Temperature (
C)

150

Si4539DY
Typical Characteristics (25
C Unless Noted)
Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

0.75

rDS(on) On-Resistance ( W )

I S Source Current (A)

20

P-Channel

10
TJ = 150
C

TJ = 25
C

0.60

ID = 4.9 A

0.45

0.30

0.15

1
0.3

0.5

0.7

0.9

1.1

1.3

VSD Source-to-Drain Voltage (V)

50

10

Single Pulse Power

40

0.5
ID = 250 mA
0.3

Power (W)

VGS(th) Variance (V)

VGS Gate-to-Source Voltage (V)

Threshold Voltage

0.7

0.1

0.1

30

20

10

0.3
50

25

25

50

75

100

125

0
0.01

150

0.10

TJ Temperature (
C)

1.00

10.00

Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

Normalized Effective Transient

Thermal Impedance

1
Duty Cycle = 0.5

0.2
Notes:

0.1

PDM

0.1
0.05

t1
t2
1. Duty Cycle, D =

t1
t2
2. Per Unit Base = RthJA = 62.5
C/W

0.02

3. TJM TA = PDMZthJA(t)
4. Surface Mounted

Single Pulse
0.01
104

103

102

101

10

Square Wave Pulse Duration (sec)

Siliconix
S-49534Rev. D, 06-Oct-97

30

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