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3880

621.38
744

TCAD SENTAURUS

IV

2010

621.382.3-022.532(076.5)
744


210600 8 .
.
.

:
.. , .. , .. , ..
. .-. , ..

Hp
, 2010

........................................................ 4
....................................................................................................... 5
1.


TCAD SENTAURS................... 7
2.

-
.................. 28
3.


TCAD SENTAURUS .................. 56
4.

HEMT-
TCAD SENTAURUS ....................................... 86
............................................................................................... 100
................................................................................................ 102

TCAD

ITRS

(.)
(.) -




(.)


HEMT (.)
( )

: ,

: ,

(1 = 9,87 103 )


DD
(.) -
HD
(.)


NA(D)
(A) (D)
RS

Xj
pn-
,
XX
YY ,
X Y

()
XY



4 , 210600 .
,
4 . -
TCAD Sentaurus [1, 3, 1316], SYNOPSYS
().

, , ,
1 ,
[3, 17].
.
,
, ,
.
TCAD- . ITRS [17], Internet,
21 , , () TCAD .

- - ( , . . ,
)
, , .
.
,
- .
,
TCAD Sentaurus . , TCAD-
70- [710, 2127], .
[16,
1517] , . [25, 17], ,
,
Intel. HEMT
A3B5, [46, 18, 19].
,

( ) ,
.
, ,
210100 210108 ,
, . , ,
, .

1



TCAD SENTAURUS
1.1.
,
TCAD Sentaurus : Sentaurus Workbench, Ligament
Flow Editor, Inspect, Tecplot_SV Sentaurus Process.

: , ,
.
1.2. ,
TCAD SENTAURUS
1.2.1. TCAD SENTAURUS

- TCAD Sentaurus

.

-

, , -, .
TCAD
Sentaurus Z-2007.03,
Ubuntu ( 10.04). TCAD- ,
(). .
TCAD- Sentaurus
(. 1.1) , , , , (framework) .
, , 30,
500 1000 .

. 1.1. TCAD Sentaurus

TCAD , ,
,
,
.
.
Sentaurus Workbench (SWB) , TCAD. SWB -

, , ,
, ,
.
Sentaurus Process (SProcess) , -, - . , , , , .
SProcess Sentaurus : DIOS,
SUPREM-IV Taurus Process.
Ligament Flow Editor c ,
. .
Sentaurus Structure Editor (SSE)
() , . (
),
- .
Sentaurus Device (SDevice) , :
-, ,
, . . ,
(, , . .)
: -
- A3B5, . .
SDevice
Sentaurus : SMOCA
SPARTA -; SDevice Electromagnetic Wave
9

; Medici, Davinci, TaurusDevice ( ISE TCAD 2005 .)


, SYNOPSYS.
Mesh Generator , - , : Mesh
Sentaurus Mesh
.
Sentaurus :
Noffset3D , , , , ;
MGoals ,

. SProcess.
Inspect , (
),
, .
Tecplot_SV , Sentaurus.
Measure ,
(*.log *.out) .
1.2.2.
,
TCAD SENTAURUS

,

() Linux, Ubuntu 10.04. . .

: user; : user.

10

TCAD Sentaurus
. , , connect_to_tcad2. , .
, *****.
, :
mc Midnight Commander (
Ubuntu, Far Manager, Norton Commander);
swb Sentaurus Workbench (
, TCAD Sentaurus );
ligedit Ligament Flow Editor (
);
sprocess Sentaurus Process ( );
sde Sentaurus Structure Editor (2D- 3D-
, 3D- );
sdevice Sentaurus Device (
, );
tecplot_sv Tecplot SV ( 2D- 3D-,
);
inspect Inspect (
,
, ).

Sentaurus TCAD, ,

EXIT!

Ubuntu , Windows.
TCAD- , TCAD Sentaurus
. .

11

( )
Midnight Commander (MC).
MC Far Manager:
F1 ;
F6 ;
F2 ;
F7 ;
F3 ;
F8 ;
F4 ;
F9 MC;
F5 ;
F10 .
:
F9 (.) ( ) Shell- , : tcadX@217.71.134.61 ( X ) Enter
(.) : ***** Enter (.)
:
home / tcad_home / tcadX / DB / Lab_Students / () / ()
MC
(Tab ), ,
:
media / disc flash- ( ,
disc flash-).
:
home / user / Ubuntu.

. : MC,
, ,
MC, , .
exit, MC. ,
.
Enter :
, .
TCAD Sentaurus
:
home / tcad_home / tcad / tcad / Z-2007.03/ Sentaurus_Training;
12

home / tcad_home / tcad / tcad / Z-2007.03 / manuals/PDFManual,


Sentaurus_Training Sentaurus TCAD (html-),
PDFManual Sentaurus TCAD (pdf-).

TCAD Sentaurus
.
, - . -
( Print Screen),
Screenshot png-,
.
Inspect
eps-,
Print Screen. , plx plt,
, ORIGIN- .
Tecplot_SV
bmp, eps, jpeg, png, tiff,
: File Export Image.
1.2.3.

: A, B C. A
Ligament Flow Editor 2D SWB,
Inspet Tecplot_SV. B 1D
Lab_1b, :
D_E (_) T_t (_),
,
p-n-
Lab_1.

. 1.1 1.2 .

13

1.1

A, B, C

B
/

A
C
D_E
T_t
1 -20
-20
-20

(100)
(100)
(100)
*
2
Dox =

SiO2
= 0,3
3

D = 1014 2
D=*
D = 1014 2
D=?
= 30
E=*
=30
=?
4
T=*
T=?
T = 1100 C T = 500 C
t=*
t=?
t = 0,5
t = 1
:
; * ; ?
.
1.2


1
2
3
4
5
1012 2 2 1012 2 3 1012 2 4 1012 2 5 1012 2
1013 2 2 1013 2 3 1013 2 4 1013 2 5 1013 2
1014 2 2 1014 2 3 1014 2 4 1014 2 5 1014 2
15
11
13
10
18
25
25
33
30
30
45
50
48
53
45
1010 C
1020 C
1030 C
1040 C
1050 C
1110 C
1120 C
1130 C
1140 C
1150 C
1210 C
1220 C
1230 C
1240 C
1250 C
1
2
3
4
5
2
3
4
5
6
3
4
5
6
7
-20
-20
-10
-4,5
-7,5
(100)
(111)
(100)
(111)
(100)
Phospho
Phosphorus Phosphorus
Boron
Boron
rus

pn-0,1
0,2
0,3
0,4
0,5

Xj ()


D1
D2
D3
B (D_E)
E1
E2
E3
T1
T2
T3
B (T_t)
t1
t2
t3

14

1.2.4.
SENTAURUS WORKBENCH

- Sentaurus , . , (
),
( ) (. 1.2).

, .
. , F9.
SWB :
, ,
.
Genesis,
[12],
Windows.
, SYNOPSYS.
- , .
( ) .
,
, . ,
, , SWB
.


project > run,
ctrl+R.

, ,
.
- .

15

16

. 1.2. SWB

16

SSE

,
.
(clean up).
project > clean up,
ctrl+L. ,
. 1.3.

. 1.3.

-
, :
project > abort running Ctrl+T .
,
, ,
.
Inspect Tecplot_SV.
Extension > Inspect Extension > Tecplot_SV
. ,
,
.

- *.log *.out.

View Output,
Ctrl+W,

17

, ,
SWB Measure , .
, , Sprocess, :
pn-.
, -,
. project > new (
) , . , .
, No Tools (. 1.4),
Tools > Add Tool,
.

. 1.4. SWB,


. 1.5.

project > save as. .

, .
SWB D_E (_)
Lab_1b . 1.6.
. ,
SProcess 65.
18

. 1.5. SWB

. 1.6. SWB Dose_Energy


Lab_1b

19

1.2.5.
SPROCESS

A SProcess,
Ligament Flow Editor . , . 1.1, .
, , () , environment ( ) substrate. .
environment 2D ( 1 1 ), , .
substrate (
(100) NA = 6,81014 3).
:
;
, \ (backslash);
# ;
: location=100<nm>.
X ().
## -----------------------------------## ---- Lab_1a ----## -----------------------------------## -----Enviroment -------------------set sim_left 0
set sim_right 1.0
set sim_bottom 1
set sim_top 0
## -----------------------------------##
## -------- LIGAMENT OUTPUT --------##
## -----------------------------------##
## ------- user defined grid ---------##
## -----------------------------------##
# ----- Control Models. -------------------------------------------implant tables=Default
20

pdbSet Silicon Dopant DiffModel Pair


# ----- Control Grid. ---------------------------------------------mgoals on min.normal.size=0.01 max.lateral.size=0.025 normal.
growth.ratio=1.1 accuracy=1<nm>
# ----- Forming Grid. ---------------------------------------------line x location=0 spacing=0.1 tag=Top
line x location=1 spacing=0.1 tag=Bottom
line y location=0 spacing=0.1 tag=Left
line y location=1 spacing=0.1 tag=Right
# ----- Forming Substrate. ----------------------------------------region Silicon xlo=Top xhi=Bottom ylo=Left yhi=Right
init concentration=6.80e+14 field=Boron wafer.orient=100 slice.
angle=[CutLine2D 0 0 0.0 1.0]
## -----------------------------------## ---- Forming a Diode Structure. ----## -----------------------------------## ----- Oxide-Mask Deposition. -----------------------------------mask name=window segments= { 0 0.4 0.6 1 } negative
deposit Oxide thickness=0.3 type=anisotropic mask=window
## ----- Save Struct. --------------------------------------------struct smesh=Diode_1
## ----- Phosphorus Implantation. --------------------------------implant Phosphorus dose=1e14 energy=30 tilt=7 rot=-90
## ----- Annealing. ----------------------------------------------temp_ramp name=tempramp_1_2 time=0.5 temp=1100
diffuse temp_ramp=tempramp_1_2
## ----- Save Struct. --------------------------------------------struct smesh=Diode_2
## ----- Save Profiles. ------------------------------------------SetPlxList { Boron }
WritePlx Boron.plx y=0.5

21

SetPlxList { Phosphorus }
WritePlx Phosphorus.plx y=0.5
SetPlxList { NetActive }
WritePlx NetActive.plx y=0.5
## ----- Rs Xj Calculation. --------------------------------------SheetResistance y=0.5
## ----- The End. ------------------------------------------------exit
, Forming a Diode
Structure, , ( , ) ,
Save Profiles
exit. struct 2D Tecplot SV.
SetPlxList ,
*.plx , Y ( WritePlx).
SheetResistance Rs.
1.3.
1. , Ubuntu, ,
Sentaurus, SWB.
2. , MC
,
,
.
3. - .
4. SWB.
. Ubuntu .
5. SWB.
.

22

6. ( ).
, SProcess.
SProcess Ligament Flow Editor
Lab_1a .
7. ,
Lab_1a.
, .
8. SWB Ligament Flow Editor
sprocess_lig.cmd,
SProcess.
SProcess
Edit input > Ligament Flow.
Ligament , ( Preferences > Target), ( Edit > Add Process
Header) , , .
environment . : title, save ( false), simulator, region (0 0 0 1), graphics
( false), depth (1). user_grid
environment, Control Models region , 1.2.5.

Substrate.
.


comment, remark, insert, implant, anneal . insert ,
. .
sprocess_lig.cmd
Ligament Flow Editor
.

, .
23

9. SWB,
(,
Ctrl+R). - , Ctrl+W
.
10.
Tecplot_SV, (, Extensions).
Diode_1_fps.tdr Diode_2_fps.tdr,
.
. p
n- . .
Lab_1a.
n1_fps.out Xj Rs.
11. SWB. Inspect
, ( y = 0,5 ). Tecplot_SV Inspect.
12. Lab_1b.
. :
Dose_Energy Temp_Time.
13.
(
) .
( ), ( F9) , MC, ,

.
14. SWB, . 1.3,
Dose_Energy.
1.3
Dose_Energy

Rs

24

Xj

Rs Xj
, (, Ctrl+W ).

.
15. p-n Inspect. *.plx p-n. , - , , , .
.
16. SWB.
Temp_Time 14 15.
. 1.3 . 1.4
1.4
Temp_Time

Rs

Xj

, . . Rs Xj
, .
17.
Lab_1b , , .
18. Lab_1c.

,
, ,
pn-.
19. ,
, , , Ubuntu, .

25

1. SWB OC
Ubuntu.
2.
( ).
3. MC
?
4.
?
.
5. - TCAD Sentaurus .
?
6. SWB ,
(), , .
7. , SWB
,
, .
8. ,
SWB. ?
9. Sentaurus,
.
10. SWB?
11. ( ) SWB, , SProcess.
12. ,
Sprocess.
13. SProcess.
, Ligament Flow Editor?
14. , Ligament Flow Editor
.
15. Ligament Flow Editor ?
26

16.
environment ?
17. substrate
SProcess, ?
18. ,
implant, Ligament Flow Editor,
, .
19. ,
anneal, Ligament Flow Editor,
, .
20. , SProcess, Ligament Flow Editor Tecplot SV.
21. strut smesh=Diode_2 , Sentaurus .
22. Tecplot SV?
23. , : SetPlxList { Boron }
WritePlx Boron.plx y = 0.5 Sentaurus .
24. ,
SProcess Inspect ,
pn-.
25. , sprocess_lig.cmd SheetResistance y = 0.5. ?

27

2


-

2.1.
, TCAD Sentaurus
.

SProcess Windows SWB, p-n- , 2D n- p .
2.2.
2.2.1.
SPROCESS

SProcess :
, ,
-.
, :

28

gaussian ;
pearson -IV ( );
pearson.s -IV ;
dualpearson .
, , , . . ,
,
implant tables=Default,
.
, , :
implant Boron energy=40 dose=1.5e12 tilt=7 rotation=90,
Boron ;

(Phosphorus Arsenic);
energy ( <keV>);
dose ( <m2>);
tilt (), ;
rotation .
XWYWZW ,
, . 2.1.

. 2.1.
XWYWZW
29

, :
tilt ( ZW O YW ) ZW;
rotation
.
(
): tilt=7; rotation=90. rotation=+90 . 2.2.

. 2.2.

, , , XWYWZW. S ,
YS ZS .
YW OYS, slice.angle,
90.
, -IV , , :
implant species= Boron Silicon gaussian
, - ,
mask, implant :
mask name=<name> segments= { 0 0.4 0.6 1 }

30

implant Boron energy=40 dose=1.5e12 tilt=7 rotation=90 mask=<name>


Implant
.
2.2.2.
SPROCESS

( ) Diffuse,
SProcess. Diffuse
:
;
(, , , . .);
.
SProcess
:
ChargedPair 3-
[8], AZ+IC
AI(Z+C) AZ+VC
AV(Z+C) (A),
(I) (V) c
(Z , ) ,
.

;
ChargedReact
5- . : (A),
(I), (V)
(AV), (AI) . .
,
,
. .;
31

ChargedFermi [8]
, .
,
;
Pair ChargedPair
A+I
AI A+V
AV
;
React ChargedReact,
;
Fermi ChargedFermi, ;
Constant . ,
. .

pdbSet. ,
:
pdbSet Silicon Dopant DiffModel Pair.
.
,
. ,
. , ,
,
diffuse temperature=900 time=20
temperature ( <>);
time (<hr> | <min> | <s>) ( <min>).
32

(. . - ),

diffuse temperature=900 time=0.0
(, )
diffuse temperature=900 time=20 H2O

800 1000 , 20 ,
diffuse temperature=800 time=20 O2 ramprate=10<C/min>
ramprate (
</s>).
ramprate > 0,
().
ramprate < 0.
(, , , ), MyNN
temp_ramp:
temp_ramp name=MyNN temperature= 800 time=20 O2 trate=10<C/min>
temp_ramp name=MyNN temperature=1000 time=10 O2
temp_ramp name=MyNN temperature=1000 time=40 O2 trate=50<C/min> last
diffuse temp_ramp=MyNN

last ,
.
trate.


.
. O2 H2O dryO2 wet, .

gas_flow,
33

.

: ,
<l/min>.
, , , 30 % 70 % 1 ,
:
gas_flow name=Oper_2 pO2=0.3 pH2=0.7

gas_flow name= Oper_2 partial_pressure = { O2=0.3 H2=0.7 }


SProcess .
:
gas_flow name= Oper_2 flowO2=0.5 flowH2=0.5
flowH2=0.2 flowN2=1.0

gas_flow name= Oper_2 flows = { O2=0.5 H2=0.5 H2=0.2 N2=1.0 }


SProcess

O2 + 2H2 > 2H2O.
, : H2O ( ), O2, H2 (), HCl, N2 ().
gas_flow temp_ramp

diffuse, :
gas_flow name= Oper_2 flows = { O2=0.4 H2=0.5 HCl=0.1 }
diffuse temperature=900 time=20 gas_flow= Oper_2

gas_flow name= Oper_2 flows = { O2=0.4 H2=0.5 HCl=0.1 }


temp_ramp name=MyNN temperature=1000 time=10 gas_flow= Oper_2
diffuse temp_ramp=MyNN

34


. ,
*.out.
.
, -
, , . 2.3.
SiO2 Bottom = 62,11 = 80,54 .
62,11 + 80,54 = 142,65 .

. 2.3. SProcess,


, ,
select z=NetActive
layers

SProcess
OxiTh,
SWB.
2.3.
: A B. A 1D
,

35

2.4, (. 2.1).
2.1

A
part1

part2

-1 (100) -1 (111)
-4.5 (100)

D = 112
D = 112
D = 80,
2
/2
/2
800 /2
E = 50
E = 50
E = 100


2 N2
2 N2

100 % 0 % 100 % 0 %
T
=* C
10
%
90
%
10
%
90
%
3
1 % 99 %
1 % 99 % t = 4, 9, 16, 25, 36, 49,
0 % 100 % 0 % 100 % 64, 81, 100, 121, 144,
169, 196
T = 1150 C T = 1150 C
t = 60
t = 60
. * : 1 1050; 2 1100; 3
1150; 4 1200; 5 1250.


- Windows (,
, Far Edit, Word
. .).
SWB
, pn-.
B 2D
Lab_2b, n- .

36

2.4. LAB_2ANPN.TXT
SPROCESS
# ******************************************************* #
#
#
# --- <<< N-P-N BIPOLAR TRANSISTOR
(1D PROCESS SIMULATION) >>> --#
#
#
# ******************************************************* #
# Deactivating The Graphical Mode Using Tecplot SV.
graphics off
# ///////////////////////////// PROCESS HEADER \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\
# ----- Selecting Models. ------------# Using Pair Diffusion Model
# for Dopants Diffusion in Silicon.
pdbSet Silicon Dopant DiffModel Pair
# ----- Meshing Strategy. ------------mgoals on min.normal.size=10<nm> max.lateral.size=50<nm> \
normal.growth.ratio=1.2 accuracy=1<nm>
# ----- Initial Grid. ----------------line x location=0 spacing=0.1 tag=SiTop
line x location=5 spacing=0.1 tag=SiBottom
# ----- Substrate. -------------------region Silicon xlo=SiTop xhi=SiBottom
init field=Boron resistivity=10.0 wafer.orient=111
# ///////////////////////////////// PROCESS \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\
# 1) ----- Forming Sacrificial Oxide - 250 A. ------------------------------# Ambient Definition.
gas_flow name=Oxi_250 flows= { H2O=0.80 N2=0.20 }
# Oxidation.
diffuse temperature=900 time=400<s> gas_flow=Oxi_250
# 2) ----- Arsenic Implantation (N-Buried Layer). -------------------------implant Arsenic energy=100 dose=1.00e14

37

# 3) ----- Inert Annealing. ------------------------------------------------diffuse temperature=1000 time=30


# ----- RS Measuring. ----------------SheetResistance
# 4) ----- Sacrificial Oxide Etching. --------------------------------------# Delete All Oxide Layers from Surface.
strip Oxide
# 5) ----- N-Epitaxy (Collector). ------------------------------------------# Epitaxy Simulation.
deposit Silicon thickness=4 Phosphorus concentration=1e16
diffuse temperature=1100 time=60
# 6) ----- Forming Sacrificial Oxide - 400 A. ------------------------------# Ambient Definition.
gas_flow name=Oxi_400 flows= { O2=0.90 N2=0.10 }
# Oxidation.
diffuse temperature=950 time=65 gas_flow=Oxi_400
# 7) ----- Boron Implantation (Base). --------------------------------------implant Boron energy=50 dose=@B_Dose@
# 8) ----- Inert Annealing. ------------------------------------------------diffuse temperature=900 time=@B_Time@
# ----- RS Measuring. ----------------SheetResistance
# 9) ----- Sacrificial Oxide Etching. --------------------------------------# Delete All Oxide Layers from Surface.
strip Oxide
# 10) ----- Forming Sacrificial Oxide - 500 A. ------------------------------# Dry Oxidation.
diffuse temperature=1000 time=42 O2
# 11) ----- Phosphorus Implantation (Emitter). ------------------------------

38

implant Phosphorus energy=30 dose=@E_Dose@


# 12) ----- Inert Annealing. ------------------------------------------------diffuse temperature=1100 time=@E_Time@
# 13) ----- Reoxidation. ----------------------------------------------------# Wet Oxidation.
diffuse temperature=900 time=20 H2O
# 14) ----- Oxide Etching. --------------------------------------------------# Delete All Oxide Layers from Surface.
strip Oxide
# 15) ----- Final Annealing. ------------------------------------------------diffuse temperature=950 time=30
# ----- Saving Profiles. -------------SetPlxList { Phosphorus }
WritePlx Phosphorus
SetPlxList { Boron }
WritePlx Boron
SetPlxList { Arsenic }
WritePlx Arsenic
SetPlxList { NetActive }
WritePlx NetActive
# ----- RS Measuring. ----------------SheetResistance
# \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ THE END ///////////////////////////////////
exit
.
1. :
0 5 ;
MGoals
10 , 50 ,
1,2;
-10, <111>.

39

2. ( 14):
(80 %),
250 ;
As, = 1,01014 2, 100 ;
1000 , 30 ;
Xj Rs;
.
3. ( 5):
Si 4 ;
:
1100 , 60 .
4. ( 69):
90 % 10 % , Dox = 400 ;
, =@B_Dose@ 2, 50 ,
7 ;
900 @B_Time@ ;
Xj Rs;
.
5. ( 1012):
, 500 ;
, =@E_Dose@ 2, 30 ,
7 ;
1100 @E_Time@ .
6. ( 1315):
, Dox = 400 ;
;
.
7. :
, ,
;
Xj Rs .
,
, .
,
. 2.4, , ,
Inspect, . 2.4, .
40

. 2.2.
Lab_2Anpn.txt:
SWB;
,

41

2.5. SPROCESS
# ********************************************************** #
#
#
#
--- <<< Lab_2b >>> --#
#
#
#***********************************************************#
graphics off
# ///////////////////////// PROCESS HEADER \\\\\\\\\\\\\\\\\\\\\\\
# ----- Selecting Models. ------------implant tables=Default
pdbSet Silicon Dopant DiffModel Pair
# ----- Meshing Strategy. ------------mgoals on min.normal.size=1<nm> max.lateral.size=50<nm> \
normal.growth.ratio=1.2 accuracy=0.1<nm>
# ----- Initial Grid. ----------------line x loc=0
tag=Top spacing=0.05
line x loc=2
tag=Bottom spacing=0.05
line y loc=0
tag=Mid spacing=0.025
line y loc=@<Lg*0.001/2+0.3>@ tag=Right spacing=0.025
# ----- Substrate. -------------------region Silicon xlo=Top xhi=Bottom ylo=Mid yhi=Right
init field=Phosphorus concentration=5.00e14 wafer.
orient=100 slice.angle=-90
# ----- Saving Struct. ---------------struct smesh=n@node@_0
# ///////////////////////////////// PROCESS \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\
# 1) ----- Screen Oxide. ----------------------------------------------------

42

deposit Oxide thickness=20<nm> type=anisotropic


# ----- Saving Struct. ---------------struct smesh=n@node@_1
# 2) ---- P-well, Anti-punchthrough & Vt Adjustment Implants. ------------implant Boron dose=2.00e13 energy=120 tilt=0 rotation=0
implant Boron dose=1.00e13 energy=50 tilt=0 rotation=0
implant Boron dose=1.00e13 energy=25 tilt=0 rotation=0
# 3) ----- P-well: RTA of Channel Implants. --------------------------------diffuse time=10<s> temp=1050
# ----- Saving Struct. ---------------struct smesh=n@node@_3
# 4) ----- Clean PAD Oxide. ------------------------------------------------etch Oxide thickness=22<nm> type=anisotropic
# ----- Saving Struct. ---------------struct smesh=n@node@_4
# 5) ----- Gate Oxidation. -------------------------------------------------deposit Oxide thickness=1.2<nm> type=anisotropic
# ----- Saving Struct. ---------------struct smesh=n@node@_5
# 6) ----- Poly Gate Deposition. -------------------------------------------deposit PolySilicon thickness=0.14 type=anisotropic

43

mask name=gate_mask left=-1 right=@<Lg*0.001/2>@


etch Poly thickness=0.16 mask=gate_mask type=anisotropic
etch Oxide thickness=0.1 type=anisotropic
# ----- Saving Struct. ---------------struct smesh=n@node@_6
# 7) ----- Poly Reoxidation. -----------------------------------------------gas_flow name=flow_1 flowN2=0.99 flowO2=0.01
diffuse time=10 temp=900 gas_flow=flow_1
# ----- Saving Struct. ---------------struct smesh=n@node@_7
# 8) ----- Reflect Before Halo. --------------------------------------------transform reflect left
# ----- Saving Struct. ---------------struct smesh=n@node@_8
# 9) ----- N-LDD Implantation. ---------------------------------------------implant Arsenic dose=8.00e14 energy=5 tilt=0 rotation=0 ifactor=0.1
# 10) ----- Halo Implantation: Quad HALO Implants. -------------------------implant Boron dose=6.00e13 energy=10 tilt=30 rotation=0 mult.rot=4
ifactor=0.1
# 11) ----- Structure Cut. --------------------------------------------------transform cut left loc=0
# ----- Saving Struct. ----------------

44

struct smesh=n@node@_11
# 12) ----- RTA of LDD/HALO Implants. ---------------------------------------diffuse time=1<s> temp=1000 init=1e-8
# ----- Saving Struct. ---------------struct smesh=n@node@_12
# 13) ----- Nitride Spacer. -------------------------------------------------deposit Oxide thickness=0.01 type=isotropic
deposit Nitride thickness=0.025 type=isotropic
deposit Oxide thickness=0.01 type=isotropic
etch
etch
etch
etch
etch

Oxide thickness=0.05 type=anisotropic


Oxide thickness=0.001 type=isotropic
Nitride thickness=0.06 type=anisotropic
Nitride thickness=0.001 type=isotropic
Oxide thickness=0.008 type=anisotropic

# ----- Saving Struct. ---------------struct smesh=n@node@_13


# 14) ----- N+ implantation. ------------------------------------------------implant spec=Phosphorus damage
implant Phosphorus dose=1.50e15 energy=20 tilt=0 rotation=0 ifactor=0.1
# 15) ----- Final RTA. ------------------------------------------------------diffuse time=1<s> temp=1025 init=1e-8
# ----- Saving Struct. ---------------struct smesh=n@node@_15

45

# 16a) ----- #split <Strain> -------------------------------------------------etch Oxide thickness=30<nm> type=isotropic


deposit Oxynitride thickness=75<nm> type=isotropic
# ----- Saving Struct. ---------------struct smesh=n@node@_16a
# 16b) -----------------------------------------------------------------------#if @<Strain == 1>@
stress Oxynitride sxxi=@Sxx@e9<Pa> syyi=@Syy@e9<Pa>
szzi=@Szz@e9<Pa>
# ----- Saving Struct. ---------------struct smesh=n@node@_16b
#endif
# 16c) ----- Recompute the Stress Distribution. ------------------------------pdbSet Silicon Dopant DiffModel Constant
diffuse time=1e-10 temp=1025
# 17) ----- Final Reflect. --------------------------------------------------transform reflect left
# ----- Saving Struct. ---------------struct smesh=n@node@_17
# ----- Saving Profiles. -------------SetPlxList { Boron Arsenic Phosphorus NetActive }

46

WritePlx n@node@_CH y=0


WritePlx n@node@_SD y=@<Lg*0.001+0.25>@
# ----- RS Measuring. ----------------SheetResistance y=0
SheetResistance y=@<Lg*0.001+0.25>@
# \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ THE END ///////////////////////////////////
exit
,
, cap- [23] cap-, . 2.5.

. 2.5.
SWB


n-
, . 2.6.
. 2.7 .

47

. 2.5. SWB

. 2.6. , n- ,
B

48

. 2.7.
XX YY n-

49

2.3.
1. , Windows,
D:\user\TCAD ( Lab_2)
Lab_2Anpn.txt ,
, 2.2, , 2.3.
.
15 .
part1 part2.
( E_Dose, B_Dose, E_Time, B_Time Lab_2Anpn.txt),

SWB ( 8) . @@.
, , , ,
@<>@, @<Dose*1e6/1.6022e-19>@,
@<O2/100.>@.
, :
SetPlxList { NetActive }
WritePlx Node@node@.
,
D:\user\TCAD ( Lab_2).
, SheetResistance.

,
Lab_2a.txt.
, Measure.

sprocess_fps.cmd sprocess_lig.cmd ( ).

50

2. , Ubuntu,
SWB.
Lab_2 ,
SProcess Measure, part1,
Lab_2a ( save as
OK ).
3. , MC
( ) .
4. SWB,
, SProcess, import file
> commands. ( ). Measure.
5.
part1. 8
, .
SProcess
. Experiments > Add new experiment , part1, .
6. , part1.
Rs Xj, , ,
( )
. Inspect .
.
:
sprocess_fps.cmd; , part1; , .
7. part2 Scenario
5 , 2.3.

51

8. , part2.
Rs Xj,
, ( ),
.
9. .
.
n- , 2.5. .
10. , , . 2.2. ( ). cap-,
, . 2.6
cap- .
- Tecplot_SV
,
.
2.2
B

Lg,

dcap,

1
2
3
4
5

50, 250, 500


60, 260, 600
70, 240, 550
80, 200, 500
90, 180, 480

55, 85, 150


50, 75, 100
60, 80, 110
65, 85, 155
40, 60, 75


Sxx, Syy,
Szz,
2, 1, 1
1, 2, 1
1, 1, 1
1, 2, 0
1, 1, 2

11. (StressXX, StressYY, StressXY)


( )

52

cap-.
.
12. n- B , p- . cap - ,
.
.
13. cap-
: cap-. .

1.
900 5 . SProcess.
2. :
D = 800 /2, E = 100 .
3. :
D = 800 /2, E = 100 .
4. implant tables=Default.
5. SProcess
pdbSet Silicon Dopant DiffModel Pair.
6. implant
.
7. , pn .
Tecplot_SV?
8. : ()
800 1000 10 , 1000 30 1000 800 40 . diffuse SProcess.
53

9. ,
Sprocess,
, .
10.
implant
?
11.
, ? , : 10 %; 89,9 %, HCl 0,1 %.
12. ,
SProcess, Ligament
Flow Editor, .
13.
SProcess SWB.
14. SWB ,
sprocess_fps.cmd?
15. , SWB , Sprocess.
16. p-n-, -
?
17. , SProcess.
18.
.
19. ,
cap- p-
n- p-.
20.
?
21. n-
Tecplot_SV?

54

22. , n-, ,
, cap-
.
23.
Tecplot_SV?
24. , n- , .
n-
- -?
25. , , , , n-
.

55

3



TCAD SENTAURUS
3.1.



, SProcess SDevice
.

, ,
SProcess SDevice SSE, SDevice.
SWB pn-, ,
n- .
3.2.
3.2.1.
SDEVICE ,
SPROCESS

(,
. .), ( pn-, ,

56

.) , SProcess, , . ,
, , SProcess
, SDevice , , .
Sentaurus
: ,
SProcess, SProcess SSE
.
SProcess, , pn ( - n-),
1,
:
# ----- ----------------------------mask name=Metal segments= { 0 0.7 1.3 2 }
deposit Aluminum thickness=0.3 mask=Metal isotropic
# ----- -------------------------contact bottom name=Anode
contact box xlo=-0.7 xhi=0.1 ylo=0.3 yhi=1.7 name=Cathode Aluminum
. 3.1 transform
reflect left.
SSE
3.2.23.2.3.
Sentaurus Z-2007.03 SDevice (*_msh.tdr), , , SSE.
, 2D , pn- ,
.

57

. 3.1. () ()

58

; Clearing the Database


(sde:clear)
; Defining Parameters
(define BND "Diode_1-@previous@_bnd.tdr")
(define DOP "Diode_1-@previous@_fps.tdr")
; Reading the Boundary
(sdeio:read-tdr-bnd BND)
; Reading the Doping
(sdedr:define-refinement-window "DopWin" "Rectangle"
(position 0.0 0.0 0.0) (position 2.0 2.0 0.0))
(sdedr:define-submesh-placement "Process"
"Doping" "DopWin" 0 "NoReplace" 0 0 0 "" "Z" 0)
(sdedr:define-submesh "Doping" DOP)
; Defining Global Grid
(sdedr:define-refinement-size "GloGr" 0.1 0.1 0.1 0.1)
(sdedr:define-refinement-placement
"Placement_GloGr" "GloGr" "DopWin")
; Refinement Boxes
(sdedr:define-refinement-window "RefBox" "Rectangle"
(position 0.5 0.0 0.0) (position 1.5 0.5 0.0))
(sdedr:define-refinement-size "RefBoxGr" 0.01 0.01 0.01 0.01)
(sdedr:define-refinement-placement
"Placement_RefBox" "RefBoxGr" "RefBox")
; Saving the MESH Command File
(sdeio:save-tdr-bnd (get-body-list) "n@node@_bnd.tdr")
(sdedr:write-cmd-file "n@node@_msh.cmd")

59

; Build Mesh
(system:command "snmesh n@node@_msh")
3.2.2.
SENTAURUS STRUCTURE EDITOR

SSE / 2D/3D
TCAD Sentaurus.

.
/
: GUI
(Graphical User Interface) .
SSE :
(, ..); ,
, - . , SSE, ,
, (, Sentaurus Mesh, Noffset3D), *.bnd
(boundary ) *.cmd (command ). , GUI.
SSE : *_msh.tdr,
SDevice,
.
GUI ,
Scheme. (, ). , ,
,
.
SSE , , . 2D
: X
60

, Y ( , SProcess). SSE
sde_dvs.cmd, .
SSE

(User Guide) Sentaurus Traning.
3.2.3.
pn-
SSE

: SSE SProcess
pn-, 3.2.1.
SSE SDE, .
(. 3.16)
, . :
1) (exact coordinates mode): Draw > Exact coordinates;
2)
: Draw > Auto Region Naming ( ).
, , , . pn .

) :
(Material List) Silicon ( )

;
) ,
. ,
,
Draw > 2D Create Tools > Rectangular Region. ,
61

(Exact Coordinates), () .
: (0 ; 0), (2 ; 2). ,
/. R.Substrate.

. : == SiO2, (0 ; 2), (2 ; 2,2), R. Oxide.
,
.

.
, , , .
- , (). , Polygonal Region
.
, (Default Boolean Expression).
Draw > Overlap Behavior > New Replaces Old
.
, .
: (0,8 ; 2), (1,2 ; 2), (1,2 ; 2,2), (1,6 ; 2,2), (1,6 ; 2,3), (0,4 ; 2,3),
(0,4 ; 2,2), (0,8 ; 2,2), (0,8 ; 2,1).
. ,

. R.Contact.


Contacts > Contact Sets. (Contact Name),
(Edge Color) (Edge Thickness). ,
Set.
: 1) Anode, ( RGB)
100, 6; 2) Cathode, 010, 6.

62

.

. Contact Sets Contacts.
Activate.

.

.
, , .
1. Anode.
(Selection Level). ,
. Select Edge,
(, ). Selection Level :
.
(
) ,
( ) . ,
.
Contacts > Set Edge(s).
2. Cathode , Selection Level Select Body
, / ( R.Contact).
Contacts > Set Region Boundary Edges.

R.Contact : Edit > 2D Edit Tools > Delete Region.

(-20).
6,8 1014 3. , ( , )
, :
(Refinement/Evaluation Window);
( , );
63

, (Placement).
, , (
). Placement , ( ).
Device > Constant Profile Placement

.
(Placement Name) Pl.Constant,
(Placement Type) Region == R.Substrate. (Constant Profile Definition) (Name) Pr.Boron, (Species) BoronActiveConcentration, (Concentration) 6.8E14.
Add Placement.

Device > Analytical Profile Placement
.
, (Refinement/Evaluation Window). , (Base Line).
,
( ). .
, 2D . Mesh > Define Ref/Eval Window > Line. :
(0,7 ; 2,0), (1,3 ; 2,0);
RW.BaseLine. . Placement Name Pl.Analytical, Ref/Win
RW.BaseLine. (Profile Definition).
Pr.Phosphorus, (Profile Type) (Gaussian), (Species) (PhosphorusActiveConcentration). , : (Peak

64

Concentration) == 7.5E16 -3, (Peak Position) == 0 , , pn- (Junction) == 6.8E14 -3 (Depth) == 0,3 .
() (Lateral Diffusion),
(Gaussian
vs Error Function), (Factor vs Standard Deviation vs Length)
. , Factor 0,8. (Eval Direction)
.

. : Mesh > Refinement Placement.
Refinement Specification. (Placement
Name) Pl.Global, Placement Type Region == R.Substrate. Refinement Definition : (Name) == RD.Global,
.
2D , Z
0, X Y 0,1 . Refinement
Function ( , )
. Gradient PhosphorusActiveConcentration Value == 1.
Add, (Refinement Function) Add Placement.
. pn-
,
. ,
. (Refinement/Evaluation Window), RW.Profile.
(0,5 ; 2), (1,5 ; 1,5). Refinement Specification. : (Placement Name) Pl.Profile, Placement Type
65

Ref/Win == RW.Profile. 0,01 . Refinement Function .


Add Placement.
SSE,
, SSE . Mesh > Build Mesh.
(. 3.25), (Mesh, SnMesh, NoffSet3D).
SnMesh. .

. ,
, , . , SSE, Tecplot_SV.
Tecplot_SV BuildMesh.
3.2.4.
SDEVICE

SDevice
. 3.2, . 3.3.

. 3.2. SDevice

66

. 3.3. SDevice

SDevice ,
, , , .., ( ):
- (DD)
(. 3.4);
(DD ) (. 3.5);
HD (
) (. 3.6).
/,
( , ,
over-shoot ( HD) . .). ,
, , , 67

. , , .. .

. 3.4.
-

. 3.5.

. 3.6.

68


,
, -
[13] (. 3.7),
SDevice.

. 3.7. -


SDevice . , ,
.

.
5104. .

69

3.2.5.

: A, B C.
A SWB
pn,
(. 3.8).

. 3.8. :
;

70

, . 3.1,
.
3.1

2
12

4
12

1 10
3 1013
5 1014

1 10
3 1014
5 1015

5 10
7 1013
9 1014

2 10
4 1013
8 1014

8 1013
4 1014
1 1015

13

12

AB
1, 1,5 2 , 10 ,
.
. 3.9 3.10 .

. 3.9.

71

. 3.10.
B

B n- Strain_NMOSFET
(. 3.11).
: cap- , ,
SDevice, (. 3.12).

. 3.11.
n-

72

. 3.12. n-M

C, , SSE .
3.3.
1. . Lab_3aa .
.
c t = 5 , SProcess,
SSE, Sdevice, .
SSE (Batch mode).
2. SProcess
, ,
. . SProcess 2D
pn- .

73

,
.
3. SSE , . Tecplot_SV 2D

*_fps.tdr. SSE
Tecplot_SV - , SProcess SSE ( *_fps.tdr *_msh.tdr . 3.13).

. 3.13. SProcess SSE

4. SDevice
.
. .
Inspect (. 3.14). .

74

. 3.14. Inspect

5. Inspect
n. Inspect Visualize > .plt-files.
, ,
. , (). (Inner Voltage) X, (Total Current)
Y.
6. Tecplot_SV 2D : ; ; ,
, ; ; -; . .
7. Inspect
( Y) n- 5 . .

75

8. Tecplot_SV
(ImpactIonization) p-n- ( . 3.15) .

. 3.15.

9. . , ,
.
,
.
10. B.
Strain_NMOSFET .
(. . 3.11) .

, .

SProcess Tecplot_SV
n-, . LDD, Halo-

76

cap- [2]. Inspect ,


, -.
n-
.
:
- ;
- , , , ;
- , , (. 3.12).
11. . SSE
SDE (. . 3.16)
, 3.2.3.

Scheme
. 3.16. SSE

77


pn- :
1)
2 2 ;
2) 200
(. 3.17);

. 3.17. Si2

3) - R.Contact
;
4) : Anode () Cathode
T- () (. 3.18) (. 3.19);

. 3.18. :
; c -

78


. 3.18.

. 3.19. SSE

5) p-n-:
6,741014 3
(-20) (. 3.20) 2D
(. 3.21);
6) . 3.22 3.25;
7) Tecplot_SV (. 3.26).

79

. 3.20. Placement

. 3.21. Placement

80

. 3.22. Refinement Specification


. 3.23. SSE
n-

81

. 3.24. Refinement Specification


. 3.25. Build Mesh


2D

82

. 3.26. 2D
pn-

1. , SDevice.
2. , , ,
SSE SDevice ?
3.
SProcess , ?
4. Tecplot_SV,
,
SProcess SSE?
5. ,
SProcess, SSE SDevice.
6. , , SDevice,
Inspect.
7. SDevice pn-?

83

8. SDevice,
?
9. , SDevice .
10. , SWB
, Sdevice.
?
11. SWB p-n-, , ?
12. Inspect ? ,
.
13. , SDevice .
14. , -
, .
15. - .
16. / , SDevice.
17. SDevice
- ?
18. SDevice
?
19. SDevice. Sentaurus ?
20. , , , , n- ,
.
21.
SSE SWB?
22.
SSE?

84

23. Sentaurus - ?
24. SSE 2D , SSE p-n.
25. SSE
?

85

4


HEMT- TCAD SENTAURUS
4.1.
HEMT (High Electron Mobility Transistor) GaAs/AlXGa1-XAs.
SSE SDevice - HEMT ( , , x)
,
HEMT.
4.2.
4.2.1.

. 4.1.
HEMT
, GaAs AlXGa1XAs/GaAs [46, 19],
.
, n- AlXGa1XAs.
n-

86

, .
( ).
. GaAs .
, .

Lg

Si3N4
GaAs

AlXGa1XAs

SiO2

GaAs

. 4.1. 2D HEMT

SSE SDevice. sde_dvs.cmd


sdevice_des.cmd SWB . 4.2.

HEMT.

. 4.2. SWB HEMT

87

HEMT
SSE sde_dvs.cmd.
SDevice sdevice_des.cmd, . .
4.2.2. SDEVICE

Electrode{
{ Name="source" Voltage=0.0 Resistor= 150 }
{ Name="drain" Voltage=0.0 Resistor= 150 }
{ Name="gate" Voltage=0.0 Schottky Barrier=0.4
eRecVelocity=1.e7 hRecVelocity=1.e7 }
{ Name="substrate" Voltage=0.0 Resistor= 1e3 }
}
File{
Grid = "@tdr@"
Current = "@plot@"
Output = "@log@"
Plot = "@tdrdat@"
Param = "@parameter@"
}
Physics {
Hydrodynamic( eTemperature )
Mobility(
HighFieldSaturation( CarrierTempDrive )
)
EffectiveIntrinsicDensity( NoBandGapNarrowing )
Recombination(
SRH Auger Radiative
Avalanche(CarrierTempDrive)
)
}
Physics( Material="GaAs" ){
Mobility( Dopingdependence )
}
88

#---------------------------------------------------#
# Physics( Material="AlGaAs" ){
#
# MoleFraction( xFraction=0.30 Grading=0) #
# }
#
#---------------------------------------------------#
Plot{
*--Density and Currents, etc
eDensity hDensity
TotalCurrent/Vector eCurrent/Vector hCurrent/Vector
eMobility hMobility
eVelocity hVelocity
eQuasiFermi hQuasiFermi
*--Temperature
eTemperature
* hTemperature Temperature
*--Fields and charges
ElectricField/Vector Potential SpaceCharge
*--Doping Profiles
Doping DonorConcentration AcceptorConcentration
*--Generation/Recombination
SRH Auger
AvalancheGeneration eAvalancheGeneration hAvalancheGeneration
*--Driving forsdeviceces
eGradQuasiFermi/Vector hGradQuasiFermi/Vector
eEparallel hEparalllel
*--Band structure/Composition
BandGap
* BandGapNarrowing
Affinity
ConductionBand ValenceBand
xMoleFraction

89

*--Traps
eTrappedCharge hTrappedCharge
eGapStatesRecombination hGapStatesRecombination
*--Heat generation
* TotalHeat eJouleHeat hJouleHeat RecombinationHeat
}
Math{
Extrapolate
Digits = 5
Notdamped=50
Iterations=15
RelErrControl
ErrRef(Electron) = 1e7
ErrRef(Hole) = 1e7
RelTermMinDensity = 1e4
RelTermMinDensityZero = 1e7
}
Solve{
*- Initial Solution:
Coupled(Iterations=100){ Poisson }
Coupled{ Poisson Electron Hole }
Coupled{ Poisson Electron Hole eTemperature }
#----------------------------------------------------------------------#
#- IdVg
#if @IdVd@ == 0
#----------------------------------------------------------------------#
*- Gate/Drain ramping to IdVg starting point:
Quasistationary(
InitialStep=5e-2 Increment=1.25
Minstep=1e-5 MaxStep=0.2
Goal{ Name="drain" Voltage= @Vd@ }
Goal{ Name="gate" Voltage= @Vgmax@ }
){ Coupled{ Poisson Electron Hole eTemperature } }
NewCurrentFile="IdVg"

90

*- IdVg sweep:
Quasistationary(
InitialStep=5e-3 Increment=1.25
Minstep=1e-5 MaxStep=0.025
Goal{ Name="gate" Voltage= @Vgmin@ }
DoZero
){ Coupled{ Poisson Electron Hole eTemperature }
CurrentPlot( Time=(Range=(0 1) Intervals=40) )
Plot(FilePrefix="n@node@" NoOverwrite
Time=(Range=(0 0.5) Intervals=1) )
}
#----------------------------------------------------------------------#
#- IdVd
#else
#----------------------------------------------------------------------#
Quasistationary(
InitialStep=1e-2 Increment=1.25
Minstep=1e-5 MaxStep=0.2
Goal{ Name="gate" Voltage= @Vg@ }
){ Coupled{ Poisson Electron Hole eTemperature } }
NewCurrentFile="IdVd_@node@"
Quasistationary(
DoZero
InitialStep=1e-3 Increment=1.5
MinStep=1e-5 MaxStep=0.05
Goal { Name="drain" Voltage= @Vd@ }
){ Coupled { Poisson Electron Hole eTemperature }
CurrentPlot( Time=(Range=(0 0.3) Intervals=30
Range=(0.3 1.0) Intervals=20))
}
#endif
}

91

4.3.
: A, B C.
A (
), 3
SSE, pn-, ( ).
B ,
sde_dvs.cmd sdevice_des.cmd, SWB , . 4.2. , . 4.1, ,

.

HEMT,
.
4.1

1
2

h_AlGaAs, n_AlGaAs,
Lg,

x_AlGaAs

0,5;
,
0,31;
0.05
1018
0,3

0,4
0,04;

0,05;

1018
0,3
0,2
AlxGa1xAs
0,06

AlxGa1xAs, 3

AlxGa1xAs, 3


AlxGa1xAs

2*1017
5*1017
1*1018
3*1017
7*1017
2*1018
0,3:
0,4;
0,5

92

0,05

0,3

0,2

0,05

0,3

0,2

0,05

1018

0,2

B
:
: Lg
0,2; 0,31 0,4 ;
AlxGa1xAs x_AlGaAs = 0,3, AlxGa1-xAs n_AlGaAs = 1018 3
h_AlGaAs = 0,05 ;

:
(IdVd = 0) Vgmin = 5,0 , Vgmax = 0 B,
Vd = 0,05 , Vg ;
(IdVd = 1) Vgmax Vgmin , Vd = 15
Vg = 0,0 ;
: h_AlGaAs 0,04; 0,05 0,06 ; AlxGa1xAs
x_AlGaAs = 0,3, n_AlGaAs = 1018 3
Lg = 0,2 ;

:
(IdVd = 0) Vgmin 6,5 ,
Vgmax = 0,0 B,
Vd = 0,05 , Vg ;
(IdVd = 1) Vgmax Vgmin , Vd = 15 ,
Vg = 0,0 ;
: n_AlGaAs
21017; 5 1017 1 1018 3,
x_AlGaAs = 0,3, h_AlGaAs = 0,05
Lg = 0,2 ;

:
(IdVd = 0) Vgmin 5,0 ,
Vgmax = 0,0 B,
Vd = 0,05 , Vg ;
(IdVd = 1) Vgmax Vgmin ,
Vd = 15 , Vg = 0,0 ;
: x_AlGaAs 0,3; 0,4 0,5, -

93

h_AlGaAs = 0,05 , Lg = 0,2


n_AlGaAs = 21017 3;

:
(IdVd = 0) Vgmin 5,0 ,
Vgmax = 0,0 B,
Vd = 0,05 , Vg ;
(IdVd = 1) Vgmax Vgmin , Vd = 15 ,
Vg = 0,0 .

. 4.3. HEMT:
;

CurrentPlot sdevice_des.cmd :
CurrentPlot( Time=(Range=(0 0.3) Intervals=30
Range=(0.3 1.0) Intervals=20))
. 4.3.
4.4.
1. Lab_4a, 3
pn- ( ).
SDevice
p-n-. tmp_01, ,
Diode_msh.tdr,
94

SSE.
pn-, SSE, ,
.
SDevice,
, , SSE, , .

. 4.4. pn-
, SSE

. 4.5. , ,
, SSE:
;

95

2. .
HEMT SSE SDevice tmp_02.
SWB ,
- ,
. 4.2. ,
, 4.3,
, , .
3. SSE ,
HEMT, . 4.6.

. 4.6. HEMT:
HEMT; () ;
; ,
HEMT

96

4. SSE Tecplot_SV ,
,
, .
5.
( . 4.3),
, . SSE
( )
SDevice
.
6. .

Lab_4c, HEMT (. 4.7).
Inspect .

. 4.7.
HEMT

7.
,
HEMT.

97

1.
HEMT.
2. HEMT
, ?
3. . 4.6, , , , , .
4. , HEMT- , . ?
5.
? ,
.
6.
HEMT?
7. , Tecplot_SV - , .
8. HEMT SDevice
?
9. SSE ?
10. ,
.
11. ,
HEMT.
12. ? ( .)
13. ,
HEMT.

98

14. HEMT , ( )?
15. HEMT nMO ?
16. EffectiveIntrinsicDensity (NoBandGapNarrowing) Sdevice?
17. - SSE SDevice?
18. SDevice Iterations Math ?
19. SDevice Coupled (Iterations = 100) { Poisson } Solve?
20. SDevice ?
21. Hydrodynamic (eTemperature), ?
22.
HEMT 2D
, ?
23.
, SProcess
SSE.
24. ,
Mobility (DopingDep HighFieldSat Enormal).
25. Material
Physics (Material = GaAs) { Mobility (Dopingdependence) } Sdevice?

99


, , ,
. 20
, . . ,
, ,
, ,
, .
,
21 [17, 20].
, , Internet .

- (,
, ). TCAD ,
, , , .
TCAD-
[8, 9, 1315, 2127, 31]. ,
SUPREM-IV PISCES-II [26],
- , ,
. TCAD-, , SYNOPSYS [1,10, 13], , ,
,
[15, 16].
TCAD-, , ,
.
100

.
TCAD ,
. , , .
,
.
, , ,
, ,
TCAD- Sentaurus.

[12, 2831] [10].
, .
, SYNOPSYS, .. .. . 3
.. .. , .

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