| | BDV66A; 226 14.9 Ss) y) BOV66EC: DARLINGTON POWER TRANSISTORS P.N-P epitaxial base Darlington transistors for audio output stages and general amplifier and switching applications. N-P-N complements are BDV67A; 8; C and D. Matched complementary pairs can be supplied. QUICK REFERENCE DATA soveea | 8 | c | 0 Collector-base voltage (open emitter) =Vcego mex. 100 | 120 | 140 | 160 v Collector-emitter voltage (open base) =-VcEo max. go | 100 | 120 | 150 v Collector current (d.c.) -l¢ max 16 A Collector current (peak value) lcm max. 20 A Total power dissipation up toTmb=25°C = Prot, max. 175 w Junction temperature max 150 °C D.C. current gain hee typ. 3000 hee > 1000 Cut-off frequency -Ic=5A;-Vce=3V fhte typ. 60 kHz MECHANICAL DATA cere eeEereTEE Dimensions in mr Fig. 1 SOT-93 -—— 1: +} S[1@AG) Collector connected to mounting base. Pinning 1= base 2= collector 3= emitter © See also chapters Mounting instructions and Accessories. : + reves | May 1988BDV66A; B BDV66C; D CIRCUIT DIAGRAM Fig. 2 RI typical 3k2 R2 typical 80.2 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 124) BOVvEsA E) Collector-base voltage (open emitter) —Veso max, 160 V Collector-emitter voltage (open base) —Vceo max. 150 V Emitter-base voltage (open collector) —Vego max. BV Collector current (d.c.) Ic max. 16 A Collector current (peak value) Icom max. 20 A Base current (d.c.) -lg max os A Total power dissipation up to Tmb=25°C Prot == max. 175 w Storage temperature Tseg 65 to + 150 °c Junction temperature* Tj max 150 °c THERMAL RESISTANCE From junction to mounting base* Rthj-mb = 0,625 Kw CHARACTERISTICS Tj = 25 OC unless otherwise specified. Collector cut-off currents Ves = ~Vesomax cleso << iu ma —Vop =—%Vcgomax! T)= 150°C -Icgq << 4 mA _ —Vce =-%4VceOmax rico << 1 mA Emitter cut-off current : ;-Veg=5V -leso << 5 mA * Based on maximum average junction temperature in line with common industrial practice. The resulting higher junction temperature of the output transistor part is taken into account. 674 August we (Darlington power transistors BDVE66A; £ BOV6EC: | 0.C. current gain* -Ig= 1A:-Vog=3V hee typ. 3000 =I¢= 104; Voce =3V hee > 1000 “IG = 16 A, Vee =3V hee typ. 1000 Base-emitter voltage”* =I¢= 10A;-Vcg = 3V Vee < 25v Collector-emitter saturation voltage* =I¢ = 10 A; -Ig = 40 mA —Vcesat < 2v Collector capacitance at f= 1 MHz Ig =le=0;—Vog = 10V Co typ. 300 pF Cutoff frequency Io = 5A; —Vce =3V fnte typ. 60 kHz Diode, forward voltage ip2 108 Ve < 3V .C. current gain ratio of matched complementary pairs =I = 10A;-Vog =3V heevheeg < = 25 Small-signal current gain ~I¢=5A:—Vc_ = 3 V: f = 1 MHz hfe typ. 40 ‘Switching times =Icon = 10; ~Igon = IBoft = 40 mA; Veo = -12V Turn-on time ton ye. 1 as Turn-off time ‘off typ. 3,5 us + Measured under pulse conditions: tp <300 ps; 5 < 2%. ** —Vge decreases by about 3,6 mV/K with increasing temperature. October 1985BDV66A; B | BDV66C; D Bovesc rt [povaso: | aa | i a L| 1 10 102 ~vge iV! Fig. 3 Safe Operating ARea: Tm <25 °C. | Region of permissible d.c. operation 11 Permissible extension for repetitive pulse operation. (1) Protmax line (2) Second breakdown limits. 676 May 1988Darlington power transistors BDV66A; L BDV66C; I 1 T 7 T | 1_| | rt) 100 | LT tk [ ] Voss T | CN | im Pir Prot max 1 ri tit is! { | : | T T soph | ! 1 7 — LT | | LI 1 TT j LTT LTT i TI ity Pit al Tt ott i ° 30 700 oe) ° 1° gay Fig. 4 Power derating curve. Fig. 5 Typical collector-emitter saturation voltage —Ic/—!g = 250; Tmb = 25 °C. tot rensoss 103) ao 10-7 1 10 ia 10? Fig. 6 Typical DC current gain —Vcg = 3 V; Tj = 25°C. May 1988