Вы находитесь на странице: 1из 10

Optical communications

Chapter 3.1
Pham Quang Thai
Pqthai.hcmut@gmail.com

Content
Semiconductor fundamentals
Light emitting diode (LED)
Laser diode

Types of material

Light absorption: atom absorbs photon (E=hv) and


moves from ground state (E1) to excited state (E2)
E2-E1=E

Light emission: excited atom (unstable) returns to


ground state and may emit photon in the process
(video)

PN Junction: n type and p type semiconductor are


combined (video)

Non-radiative recombination: excited atom


returns to ground state but does not emit light

Radiative recombination lifetime: excited duration of atoms that will


emit photons when recombine
Non-radiative recombination lifetime: excited duration of atoms that
will not emit photons when recombine
8

Direct band gap: excited atom=photon


Indirect band gap: excited atom=photon + phonon
Direct band gap semiconductor (GaAs, InP, AlAs, etc.) is used
for better efficiency
Photon absorption in
a direct bandgap semiconductor (GaAs, InAs,
InP, GaSb, InGaAs, GaAsSb).

Photon absorption in
an indirect bandgap semiconductor (Si, Ge)
E

E
CB

Indirect Bandgap

EC

CB
Eg

Direct Bandgap

Photon

Eg

EC
Photon

EV

EV
VB
k

VB
k

Phonons
k
9

10

Вам также может понравиться