Inchange Semiconductor

Product Specification

2N5050 2N5051 2N5052

Silicon NPN Power Transistors

DESCRIPTION
With TO-66 package
High breakdown voltage
Excellent safe operating area
APPLICATIONS
Designed for driver circuits,switching
and amplifier applications
PINNING
PIN

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-66) and symbol

Absolute maximum ratings(Ta=)

SYMBOL

VCBO

PARAMETER

CONDITIONS

2N5050

Collector-base voltage

2N5051

2N5052

VCEO

VEBO

A
H
C
IN

Collector-emitter voltage

2N5051

N
O
C
EMI

Open emitter

Open base

2N5052

Emitter-base voltage

UNIT

125

NG S
2N5050

R
O
T
DUC
VALUE

150

200

125
150

200
Open collector

40

IC

Collector current

PD

Total Power Dissipation

Tj

Junction temperature

150

Tstg

Storage temperature

-65~200

VALUE

UNIT

7.0

/W

TC=25

THERMAL CHARACTERISTICS
SYMBOL
Rth j-c

PARAMETER
Thermal resistance junction to case

Inchange Semiconductor

Product Specification

2N5050 2N5051 2N5052

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS
2N5050

VCEO(SUS)

Collector-emitter
sustaining voltage

2N5051

MIN

TYP.

MAX

UNIT

125
IC=0.1A ;IB=0

2N5052

150
200

VCEsat

Collector-emitter saturation voltage

IC=2A; IB=0.5A

1.2

VBEsat

Base-emitter saturation voltage

IC=2A; IB=0.5A

1.5

Base-emitter on voltage

IC=750mA ; VCE=5V

1.2

5.0

mA

VBE

2N4910
ICEO

ICBO

Collector cut-off current

Collector cut-off current

VCE=125V; IB=0

2N4911

VCE=150V; IB=0

2N4912

VCE=200V; IB=0

N
O
C
EMI

VCB=Rated VCBO; IE=0

S
G
N
HA

IEBO

Emitter cut-off current

hFE

DC current gain

IC=750mA ; VCE=5V

Transition frequency

IC=500mA;VCE=10V;f=1MHz

fT

INC

R
O
T
DUC

VEB=7V; IC=0

25

0.1

mA

1.0

mA

100
10

MHz

Inchange Semiconductor

Product Specification

2N5050 2N5051 2N5052

Silicon NPN Power Transistors

PACKAGE OUTLINE

N
O
C
EMI

INC

S
G
N
HA

Fig.2 outline dimensions

R
O
T
DUC