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H13003D

ShenZhen Jingdao Electronic Co.,Ltd.

Bipolar Junction Transistor

www.jdsemi.cn
Si NPN
RoHS COMPLIANT

1APPLICATION
Fluorescent LampElectronic Ballast
and Switch-mode power supplies

2FEATURES

High voltage capability

Intergrated antiparallel collector-emitter diode
Features of good high temperature
High switching speed

VD

3PACKAGE
TO-126D

4Electrical Characteristics

1 Base(B) 2 Collector(C) 3 Emitter(E)

4.1 Absolute Maximum Ratings

Tamb= 25 unless specified

PARAMETER
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Ta=25
Power Dissipation
Tc=25
Junction Temperature
Storage Temperature

SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg

VALUE
650
400
9
2.0
1.25
26
150
-55150

UNIT
V
V
V
A
W

4.2 Electrical Parameter

Tamb= 25 unless specified

PARAMETER
Collector-Base Voltage
Collector-Emittor Voltage
Emittor-Base Voltage
Collector-Base Cutoff Current
Collector-Emittor Cutoff Current
Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage
Base-Emittor Saturation Voltage
Rising Time
Falling Time
Storage Time
Typical Frequency

SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE*
VCE sat*
VBE sat*
tr
tf
ts
fT

TEST CONDITION
IC=1mAIE=0
IC=1mAIB=0
IE=1mAIC=0
VCB=650V, IE=0
VCE=400V, IB=0
VEB=9V, IC=0
VCE=5V, IC=1mA
VCE=5V, IC=200mA
IC=1A, IB=0.5A
IC=1A, IB=0.5A
IC=250mA (UI9600)
VCE=20V,IC=20mA,
f=1MHz

VALUE
MIN
TYP MAX
650
400
9
10
20
10
8
15
30
0.6
1.2
0.5
0.5
2.1
3.3
5

UNIT
V
V
V
A
A
A

V
V
s
s
s
MHz

: Pulse test tp300s,2%

Add 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516
Fax0755-29799515
1

2013

www.jdsemi.cn

H13003D

ShenZhen Jingdao Electronic Co.,Ltd.

Bipolar Junction Transistor

5. Characteristic Curve
Fig1

SOA
DC

Fig2

4.0

Ptot
T

30
Ta=25

Ptot-Tc

24

IC (A)

Ptot (W)

1.0

18

12

0.1

Ptot-Ta
0.01
1

10

1000

100

Fig3

Tc ( C)

Static Characteristic

Fig4

hFE-IC

100

Ta=25

Ta=25

hFE

IB=100mA

IC (A)

150

100

50

VCE (V)

10

IB=20mA
IB=10mA

VCE=5V
0

5
V CE (V)

1
1mA

10

0.01

Fig5 VCEsat-IC

10

Fig6 VBEsat-IC

10

1.5

Ta=25
IC/IB=2

Ta=25
IC/IB=2
1

VBEsat (V)

VCEsat (V)

0.1
IC (A)

1.0

0.1

0.01
1mA

0.01

0.1

0.5
1mA

10

Ic (A)

0.01

0.1

Ic (A)

Add 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516
Fax0755-29799515
2

2013

10

www.jdsemi.cn

H13003D

ShenZhen Jingdao Electronic Co.,Ltd.

Bipolar Junction Transistor

6Package Dimentions(Unit
mm)
TOTO-126D

Add 1-4F,3rd Building,Honghui Industrial Park, 2nd Liuxian Road,Xinan Street,Baoan District,Shenzhen City,P.R.C
Tel0755-29799516
Fax0755-29799515
3

2013