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2SC6090LS

Ordering number : ENA0996

SANYO Semiconductors

DATA SHEET
NPN Triple Diffused Planar Silicon Transistor

2SC6090LS

Color TV Horizontal Deflection


Output Applications

Features

High speed.
High breakdown voltage (VCBO=1500V).
Adoption of high reliability HVP process.
Adoption of MBIT process.

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter
Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

Collector-to-Emitter Voltage

VCBO
VCEO

Emitter-to-Base Voltage

VEBO

IC

10

ICP

25

2.0

Collector Current
Collector Current (Pulse)
Collector Dissipation

PC

Junction Temperature

Tj

Storage Temperature

Tstg

Tc=25C

1500

700

35

150

--55 to +150

Electrical Characteristics at Ta=25C


Parameter

Symbol

Collector Cutoff Current

ICBO

Collector Cutoff Current

ICES

Collector Sustain Voltage


Emitter Cutoff Current

VCEO(sus)
IEBO

Conditions

Ratings
min

typ

VCB=800V, IE=0A
VCE=1500V, RBE=0
IC=100mA, IB=0A

Unit

max
10

1.0

mA

1.0

mA

700

VEB=4V, IC=0A

Continued on next page.

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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0507KC TI IM TC-00000005 No. A0996-1/4

2SC6090LS
Continued from preceding page.
Parameter

Symbol

Collector-to-Emitter Saturation Voltage

VCE(sat)
VBE(sat)

Base-to-Emitter Saturation Voltage

VCE=5V, IC=1A
VCE=5V, IC=8A

hFE2

Fall Time

min

typ

tf

1.5

15
5

IC=5A, IB1=1A, IB2=--2A

Package Dimensions

Unit

max

IC=7.2A, IB=1.44A
IC=7.2A, IB=1.44A

hFE1

DC Current Gain

Ratings

Conditions

0.2

Switching Time Test Circuit

unit : mm (typ)
7509-003
4.5

10.0
3.2

RB

RL
40

7.2

3.5

VR

16.0

50
+
470F

0.6

16.1

+
100F
VBE= --5V

0.7

1 : Base
2 : Collector
3 : Emitter

2.4

1 2 3

2.55

VCC=200V

1.2

14.0

3.6

0.9
1.2
0.75

SANYO : TO-220FI(LS)

2.55

IC -- VCE

12

1.8A

1.6A

IC -- VBE

12

VCE=5V

1.4A 1.2A 2.0A

10

10

1.0A
0.8A
0.6A

0.4A

0.2A

Ta=
120
C
25
C
--40
C

Collector Current, IC -- A

Collecotr Current, IC -- A

OUTPUT
IB2

2.8
INPUT

IB=0A

0
0

25C

--40C

10
7
5
3
2

0.6

0.8

1.0

1.2
IT03005

VCE(sat) -- IC

10
7
5

Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V

0.4

Base-to-Emitter Voltage, VBE -- V

VCE=5V

Ta=120C

0.2

IT03004

hFE -- IC

100
7

0
10

Collector-to-Emitter Voltage, VCE -- V

DC Current Gain, hFE

IB1

PW=20s
D.C.1%

IC / IB=5

3
2
1.0
7
5

C
25

3
2

0C

2
Ta=1

0.1
7
5

C
--40

3
2

1.0
0.1

1.0

Collector Current, IC -- A

10

IT03006

0.01
0.1

1.0

Collector Current, IC -- A

7
10
IT03007

No. A0996-2/4

2SC6090LS
SW Time -- IC

tstg

3
2

1.0
7
5
3

VCC=200V
IC / IB1=5
IB2 / IB1=2
R load

0.1

7
0.1

tf

1.0

ts
tg

5
3
2
1.0

tf

7
5
3
2
0.1
7
0.1

7
10
IT13088

Collector Current, IC -- A

Collector Current, IC -- A

0
30

era

10

op

s
1m

DC

1.0
7
5
3
2

L=500H
IB2= --2A
Tc=25C
Single pulse

3
2

IT13089

s
10m

Collector Current, IC -- A

1.0

Reverse Bias A S O

IC=10A

tio

0.1
7
5
3
2

ICP=25A

10
7
5

Base Current, IB2 -- A

Forward Bias A S O
5
3
2

VCC=200V
IC=5A
IB1=1A
R load

10

Switching Time, SW Time -- s

Switching Time, SW Time -- s

SW Time -- IB2

10
7
5
3
2
1.0
7
5
3
2

Tc=25C
Single pulse

0.01
1.0

5 7 10

5 7 100

0.1
100

5 7 1000

Collector-to-Emitter Voltage, VCE -- V

PC -- Ta

2.5

1000

Collector-to-Emitter Voltage, VCE -- V

IT13094

IT13091

PC -- Tc

40

Collector Dissipation, PC -- W

Collector Dissipation, PC -- W

35
2.0

1.5

No

he

at

1.0

sin

0.5

30
25
20
15
10
5
0

0
0

20

40

60

80

100

120

Ambient Temperature, Ta -- C

140

160

IT13095

20

40

60

80

100

120

Case Temperature, Tc -- C

140

160

IT13096

No. A0996-3/4

2SC6090LS

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of December, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0996-4/4

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