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SANYO Semiconductors
DATA SHEET
NPN Triple Diffused Planar Silicon Transistor
2SC6090LS
Features
High speed.
High breakdown voltage (VCBO=1500V).
Adoption of high reliability HVP process.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
Collector-to-Emitter Voltage
VCBO
VCEO
Emitter-to-Base Voltage
VEBO
IC
10
ICP
25
2.0
Collector Current
Collector Current (Pulse)
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25C
1500
700
35
150
--55 to +150
Symbol
ICBO
ICES
VCEO(sus)
IEBO
Conditions
Ratings
min
typ
VCB=800V, IE=0A
VCE=1500V, RBE=0
IC=100mA, IB=0A
Unit
max
10
1.0
mA
1.0
mA
700
VEB=4V, IC=0A
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0507KC TI IM TC-00000005 No. A0996-1/4
2SC6090LS
Continued from preceding page.
Parameter
Symbol
VCE(sat)
VBE(sat)
VCE=5V, IC=1A
VCE=5V, IC=8A
hFE2
Fall Time
min
typ
tf
1.5
15
5
Package Dimensions
Unit
max
IC=7.2A, IB=1.44A
IC=7.2A, IB=1.44A
hFE1
DC Current Gain
Ratings
Conditions
0.2
unit : mm (typ)
7509-003
4.5
10.0
3.2
RB
RL
40
7.2
3.5
VR
16.0
50
+
470F
0.6
16.1
+
100F
VBE= --5V
0.7
1 : Base
2 : Collector
3 : Emitter
2.4
1 2 3
2.55
VCC=200V
1.2
14.0
3.6
0.9
1.2
0.75
SANYO : TO-220FI(LS)
2.55
IC -- VCE
12
1.8A
1.6A
IC -- VBE
12
VCE=5V
10
10
1.0A
0.8A
0.6A
0.4A
0.2A
Ta=
120
C
25
C
--40
C
Collector Current, IC -- A
Collecotr Current, IC -- A
OUTPUT
IB2
2.8
INPUT
IB=0A
0
0
25C
--40C
10
7
5
3
2
0.6
0.8
1.0
1.2
IT03005
VCE(sat) -- IC
10
7
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
0.4
VCE=5V
Ta=120C
0.2
IT03004
hFE -- IC
100
7
0
10
IB1
PW=20s
D.C.1%
IC / IB=5
3
2
1.0
7
5
C
25
3
2
0C
2
Ta=1
0.1
7
5
C
--40
3
2
1.0
0.1
1.0
Collector Current, IC -- A
10
IT03006
0.01
0.1
1.0
Collector Current, IC -- A
7
10
IT03007
No. A0996-2/4
2SC6090LS
SW Time -- IC
tstg
3
2
1.0
7
5
3
VCC=200V
IC / IB1=5
IB2 / IB1=2
R load
0.1
7
0.1
tf
1.0
ts
tg
5
3
2
1.0
tf
7
5
3
2
0.1
7
0.1
7
10
IT13088
Collector Current, IC -- A
Collector Current, IC -- A
0
30
era
10
op
s
1m
DC
1.0
7
5
3
2
L=500H
IB2= --2A
Tc=25C
Single pulse
3
2
IT13089
s
10m
Collector Current, IC -- A
1.0
Reverse Bias A S O
IC=10A
tio
0.1
7
5
3
2
ICP=25A
10
7
5
Forward Bias A S O
5
3
2
VCC=200V
IC=5A
IB1=1A
R load
10
SW Time -- IB2
10
7
5
3
2
1.0
7
5
3
2
Tc=25C
Single pulse
0.01
1.0
5 7 10
5 7 100
0.1
100
5 7 1000
PC -- Ta
2.5
1000
IT13094
IT13091
PC -- Tc
40
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
35
2.0
1.5
No
he
at
1.0
sin
0.5
30
25
20
15
10
5
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- C
140
160
IT13095
20
40
60
80
100
120
Case Temperature, Tc -- C
140
160
IT13096
No. A0996-3/4
2SC6090LS
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of December, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0996-4/4