DNSK1

DNSK2

You want to design an antireflection coating for a Si solar cell. Your

first idea is to create an antireflection coating that consists of a single
thin film of material on top of your semiconductor. This coating should
be designed to minimize reflection of sunlight off the top at 600 nm,
near the peak of the incident solar spectrum.
a) If the refractive index of Si at = 600 nm is n = 3.9, what fraction of
incident sunlight at 600 nm is reflected if there is no antireflection
coating?

b) The best way to minimize reflection is to choose a material such

that the refractive index of the antireflection layer is the geometric
mean of the surrounding layers. For example, if we consider a threelayer system consisting of air (n0 = 1), the antireflection coating of
index n1, and Si with n2 = 3.9, the best antireflection coating will have
a refractive index of n1 = n0n2. What is this refractive index and how
thick should this layer be to get the minimum reflection at 600 nm
incident sunlight?
c) After doing more reading, you find out that in many Si solar cells
pyramids are etched into the top surface of the solar cell to minimize
reflection and keep light trapped inside the Si wafer. If the top surface
of the solar cell is the (001) plane, and the etching exposes the {111}
planes, what is the angle in the sketch below?

Assuming the source and substrate are grounded and that the
source/drain doping concentrations are 1019 cm-3, calculate the drain
voltage that will result in punch-through for a p-channel MOSFET that
has an n+ polysilicon gate on an n-type substrate doped ND =
3x1016cm-3. Assume the oxide is 6 nm thick, Qi = q x 4x1011 C/cm2.