Eee 304 Lecture Notes - 1

EEE 304
Power Electronics
Lecture Notes
D. R. Binu Ben Jose
VIT University, Chennai Campus,
Chennai - 127
Introduction
Course Name
: Power Electronics
Course Code
: EEE 304
LTPC
:3024
Course
Pre-requisites
: EEE102
VIT University, Chennai Campus, Chennai.
Objectives
To get adequate knowledge of the power

electronic devices and their applications
To know about electric power conversion

(AC to DC, DC to DC, DC to AC), control and
conditioning of electric power
To get a clear exposure on designing the

power electronic circuits
Expected Outcome
On the completion of this course the
student will be able to:
Obtain the switching characteristic of different types of power

semi-conductor devices.
Determine the operation, characteristics and performance
parameters of controlled rectifiers.
Apply switching techniques and basic topologies of DC-DC
switching regulators
Use the different modulation techniques of pulse width
modulated inverters and to apply the harmonic reduction
methods.
Design the power electronic converters in conditioning the
power supply that suit the practical applications.
Student outcomes
An ability to apply knowledge of mathematics,

science, and engineering
An ability to design and conduct experiments, as
well as to analyze and interpret data
An ability to design a system, component, or
process to meet desired needs within realistic
constraints such as economic, environmental,
social, political, ethical, health and safety,
manufacturability, and sustainability
An ability to identify, formulate, and solve
engineering problems
Evaluation Mode
Continuous Assessment (30 %)
Assignments / Seminars/ Projects (20 %)
Term - End Examination (50 %)
Syllabus
Unit I
Power Semi-Conductor Devices
Structure, operation and characteristics

of SCR, TRIAC, power transistor,
MOSFET and IGBT. Driver and snubber
circuits for MOSFET - Turn-on and turnoff characteristics and switching losses
series & parallel operation protection
of SCRs firing & typical control
circuits Performance parameter
Unit II
Phase-Controlled Converters
2-pulse, 3-pulse and 6-pulse converters

Inverter operation of fully controlled
converter Effect of source inductance
single phase dual converter Single
phase AC voltage controllers; AC
chopper; single phase cyclo converters.
Unit III
DC To DC Converters
Step-down and step-up choppers Time ratio control and current limit
control basic oscillating chopper
multi chopper quadrant operation of
chopper.
10
Unit IV
Inverters
Introduction of basic series and parallel

inverters, single phase Bridge inverters
PWM techniques: Sinusoidal PWM
modified sinusoidal PWM and multiple
PWM- Voltage and harmonic control Series resonant inverter - Current
source inverters.
11
Unit V
Applications
Regulated power supply, SMPS, UPS ,

DC Circuit Breakers , AC circuit
breakers, HVDC systems, AC and DC
motor control.
12
Reference Books
1.
2.
3.
4.
5.
Muhammad H. Rashid, Power Electronics: Circuits,

Devices and Applications, Pearson Education, Third
edition, 2004 / PHI.
Ned Mohan, Tore.M.Undeland, William.P.Robbins,
Power Electronics: Converters, Applications and
Design, John Wiley and sons, third edition, 2003.
S N Singh, A text book of power Electronics,
Dhanpat Rai and Co., New Delhi, 2000.
Bimal K. Bose, Modern Power Electronics and AC
Drives, Pearson Education, 2003.
Jaganathan, Introduction to Power Electronics,
Prentice Hall of India, 2004.
13
Lecture 1, 2
10, 14.07.2015
14
Unit I
Structure, operation and characteristics

of SCR, TRIAC, power transistor,
MOSFET and IGBT. Driver and snubber
circuits for MOSFET - Turn-on and turnoff characteristics and switching losses
series & parallel operation protection
of SCRs firing & typical control
circuits Performance parameter
15
Fundamentals of Devices
Semiconductors
16
Contd
PN Junction diodes
17
Transistors
Basic Structure
18
Contd
NPN Transistor
PNP Transistor
NPN transistors are used widely than PNP transistors. Why?
Students to search and find the answer for this question

19
Contd
Transistor Characteristics
20
Modes of operation
Cutoff: In cutoff, both junctions reverse biased. There is very little current flow,
which corresponds to a logical "off", or an open switch.
Forward-active (or simply, active): The emitter-base junction is forward biased

and the base-collector junction is reverse biased. Most bipolar transistors are
designed to afford the greatest common-emitter current gain, f in forwardactive mode. If this is the case, the collector-emitter current is approximately
proportional to the base current, but many times larger, for small base current
variations.
Reverse-active (or inverse-active or inverted): By reversing the biasing

conditions of the forward-active region, a bipolar transistor goes into reverseactive mode. In this mode, the emitter and collector regions switch roles. Since
most BJTs are designed to maximise current gain in forward-active mode, the
f in inverted mode is several times smaller. This transistor mode is seldom
used. The reverse bias breakdown voltage to the base may be an order of
magnitude lower in this region.
Saturation: With both junctions forward-biased, a BJT is in saturation mode and

facilitates current conduction from the emitter to the collector. This mode
corresponds to a logical "on", or a closed switch.
21
Contd
Typical Transistors
22
Unit I
23
Lecture 3
15.07.2015
24
Classification
25
Important Parameters
Breakdown voltage and current

On-state resistance.
Trade-off between breakdown voltage and
on-state resistance.
Rise and fall times for switching between on
and off states.
Safe-operating area.
26
Thyristor
Thyristor is a family of devices having 4

semiconducting layers (typically - PNPN).
Eg. SCR, Triac, Diac
Silicon controlled rectifier (SCR) is the most

powerful device in the thyristor family.
Triac is used in medium power supplies
(preferably 1 kW).
Diac is a switching device.
27
Silicon controlled rectifier (SCR)
Used on (HVDC) systems
28
Contd
Structure and
Two transistor
analogy
Cathode
Gate
n
J3
19
10
-3
cm
n
17
10
cm
-3
J2
J1
13
10
10
17
19
10
14
-5 x 10
cm
-3
cm
-3
-3
19
10
-3
cm
10m
30-100m
50-1000m
30-50m
cm
Anode
29
Characteristics
Three States:
Reverse Blocking
Forward Blocking
Forward Conducting
30
Effects of gate current
31
Estimation of anode current
32
Contd...
Considering PNP transistor

of the equivalent circuit,
I E 1 I A , I C I C1 , 1 ,
I CBO I CBO1 , I B I B1
I B1 I A 1 1 I CBO1 1
33
Contd...
Considering NPN transistor

of the equivalent circuit,
I C I C2 , I B I B2 , I E2 I K I A I G
I C2 2 I k I CBO2
I C2 2 I A I G I CBO2 2
34
Contd
From the equivalent circuit,

we see that
I C2 I B1
2 I g I CBO1 I CBO 2
IA
1 1 2
35
Contd
Case 1: When I g 0
IA
I CBO1 I CBO2
1 1 2
Case 2: When I G 0
2 I g I CBO1 I CBO 2
IA
1 1 2
36
Switching characteristic of SCR

Turn-on
Characteristics
ton td tr
37
Contd
VAK
tC
tq
Turn-off Characteristic
t
IA
Anode current
begins to
decrease
Commutation
di
dt
Recovery
t1 t2
Recombination
t3
t4
t5
t
tq=device
off time
tc=circuit
off time
tgr
trr
tq
tc
38
Methods to Turn-on SCR
Thermal Turn-on.
Light.
High Voltage.
Gate Current.
dv/dt.
39
Various terms
Average ON state current rating

RMS forward conduction current rating
Surge current rating
Holding current
Latching current
di/dt rating
Peak repetitive forward blocking voltage
Forward break over voltage
Peak repetitive reverse blocking voltage
Turn OFF time
Turn ON time
40
Lecture 4
21.07.2015
41
Bidirectional Triode Thyristors

(TRIAC)
42
Contd
43
Operating modes
Mode 1(MT2 Positive, Gate Positive)

MT2 (+)
P1
N1
P2
Ig
N2
MT1 ()
(+)
Ig
44
Contd
Mode-II (MT2 Positive, Gate Negative)

MT2 (+)
P1
Initial
conduction
Final
conduction
N1
P2
N3
N2
MT1 ()
V
Ig
45
Contd
Mode-III, MT2 Negative, Gate Positive

MT 2 ()
N4
P1
N1
P2
N2
MT1 (+)
G
(+)
Ig
46
Contd
Mode-IV, MT2 Negative, Gate Negative

MT2 ()
N4
P1
N1
N3
P2
MT 1 (+)
G
(-)
Ig
47
Characteristics
48
SCR and Triac conduction
49
MOSFET
Symbols
50
MOSFET Terminals
The voltage applied to the GATE terminal determines

whether current can flow between the SOURCE & DRAIN
terminals.
For an n-channel MOSFET, the SOURCE is biased at a lower

potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when VG > VT)
For a p-channel MOSFET, the SOURCE is biased at a higher

potential (often the supply voltage VDD) than the DRAIN
(Holes flow from SOURCE to DRAIN when VG < VT )
The BODY terminal is usually connected to a fixed

potential.
For an n-channel MOSFET, the BODY is connected to VDD V

For a p-channel MOSFET, the BODY is connected to 0 V
51
MOSFET Structure
NMOS: N-channel Metal
Oxide Semiconductor
L = channel length
W = channel width
GATE
L
Metal (heavily
doped poly-Si)
DRAIN
SOURCE
A GATE electrode is placed above (electrically insulated from)
the silicon surface, and is used to control the resistance
between the SOURCE and DRAIN regions
52
N-channel MOSFET
Gate
Source
IS
IG
Drain
gate
oxide insulator
n
ID
n
Without a gate-to-source voltage applied, no current can

flow between the source and drain regions.
Above a certain gate-to-source voltage (threshold
voltage VT), a conducting layer of mobile electrons is
formed at the Si surface beneath the oxide. These
electrons can carry current between the source and drain.
53
High voltage MOSFET - Operation
54
Characteristics
Output characteristics
55
Insulated gate bipolar transistor

(IGBT)
Posses the advantages of both BJT and

IGBT such as less Vce ON and voltage
controlled.
Better characteristics at high voltages
High power rating
56
IGBT structure, operation and

characteristics
The characteristics is similar to that of MOSFET

57
Driver Circuits for SCR
58
Contd
59
Contd
60
Driver Circuits for MOSFET/IGBT
61
Series and parallel operation of devices
Series connection of SCRs
R = (nVd Vs)/(n 1)Ib

C = (n 1) Qrr/ (nVd Vs)
62
Contd
Parallel connection of SCRs
63
Exercise 1
64
Exercise 2
65
Exercise 3
66
Snubber Circuits for SCRs (Protection)
Turn on snubber
di/dt protection
Limits inrush
switching Current
Inductance
Turn off snubber

dv/dt protection
Limits voltage spikes

Series RC network
67
Exercise 1
68
Contd
69
Exercise 2
70
Contd
71
Snubber Circuits for MOSFETs
Turn on snubber
di/dt protection
Limits inrush
switching Current
Inductance
Turn off snubber

dv/dt protection
Limits voltage spikes

Series RC network
72
Exercise 3
73
Switching losses of devices
74
Exercise 1
75
Contd
76
Contd
77
Contd
78
Contd
79
Exercise 2
80
Exercise 3
81
Contd
82
Exercise 4
83
Contd
84
Exercise 5
85
Contd
86
Contd
87
Contd
88
Thermal Protection
Switching and conduction losses increases the

junction temperature sometimes beyond 100o C
Maximum operating case temperature is 60o C
This keeps the junction temperature less than
100o C
Use heat sinks for medium power
Use coolant for high power
89
Sample Heat sinks
90
Assignment
1
91
Contd
3
92
Contd
4
Design a heat sink (dimensions and Heat sink part number

available in internet) for an IGBT CT60AM based simple boost
converter. Heat sink temperature not to exceed 60o C. CT60AM
carries an average current of 30 A and a peak current of 60 A
at a switching frequency of 10 kHz and duty ratio 50 %. Use
appropriate thermal pad and heat sink compound. Assume no
core saturation occurs in the boost inductor.
CT60AM
93
Unit II
2-pulse, 3-pulse and 6-pulse converters

Inverter operation of fully controlled
converter Effect of source inductance
single phase dual converter Single
phase AC voltage controllers; AC
chopper; single phase cyclo converters.
94
General
Single-Phase
Three-Phase
Semiconverter Semiconverter
Full converter
Full converter
Dual converter Dual converter

95
Quadrant operation of converters
96
Contd
97
Converters - classification
Semiconverter
..is a one-quadrant converter and it has one polarity
Full converter
..is a two-quadrant converter and the polarity of its output
can be either positive or negative. However
the output current of full converter has one polarity only
Dual converter
..can operate in four quadrants ; both the output voltage
and current can be either positive or negative
98
Single pulse converter / Half wave

controlled rectifier with R load
99
Contd
Average
Vm
1
Output Vdc 2 Vm sin td t 2 1 cos
Voltage
Maximum Average
Vm
Vdm
Output Voltage
Normalized
Output Voltage
Vdc
Vn
0.51 cos
Vdm
RMS o/p
Vm 1
1
sin 2
2
2
Vrms
V
sin
td
2
2
2
Voltage
100
Exercise 1 (Single pulse converter

with purely resistive load)
A single pulse converter has a purely

resistive load of R and a delay angle of =
/2, determine
the rectification efficiency

the form factor FF
the ripple factor RF
the peak inverse voltage PIV of thyristor T1
101
Contd
Vdc
Vm
1
V
sin
td
m
2
2
cos
Vdc 0.1592Vm
Vrms
Vm
2
2
dc
2
rms
2
1
2
sin
2
2
0.1592Vm
2
0.3536Vm
0.3536Vm
20.27%
102
Contd
Vrms 0.3536Vm
FF
2.221
Vdc 0.1592Vm
RF FF 1 2.221 1 1.983
2
PIV Vm
103
Single pulse converter / Half wave

controlled rectifier with RL load
104
Exercise 2 (Single pulse converter

with inductive load (RL))
A single pulse converter has an inductive

load of R-L, a delay angle of = /3 and
conduction angle of 2/3, determine
the rectification efficiency

the form factor FF
the ripple factor RF
the peak inverse voltage PIV of thyristor T1
105
Single-Phase full converter

With R Load
106
Contd
With RL Load
107
Average and RMS values of single

phase full converter
2
Vdc
2
Vrms
Vm sin td t
2Vm
cos
Vm
V sin td t
2
2
m
108
Single-Phase
Semiconverter
109
Contd
Average and rms values
Vm
2
Vdc
V
sin
td
cos
m
2
Vrms
2
2
2
Vm sin td t
2
110
Single phase dual converter
111
Waveforms
112
Input output performances
Performance curves of LCC

Input displacement factor (DPF)
Input power factor (PF)
Angle of displacement between V and I

Fundamental real power input (upon) RMS
apparent power.
Input current distortion factor
Fundamental rms amplitude (upon) total rms

amplitude
113
Contd.
Input harmonic factor
DC voltage ratio
Mean dc voltage to maximum dc voltage
Voltage ripple factor
Total harmonic current (upon) fundamental

current
Net harmonic content of output voltage to

average voltage
Current ripple factor
Net harmonic content of output current to

average current
114
Single-Phase Full Converter (RLEload continuous conduction)
115
Contd
Mode 1 = Mode 2
At t = , IL = ILo
116
Contd
2VS
2VS
E
E
IL
sin t I L 0
sin e
Z
R
R
Z
where
tan 1
L
R
R
t
L
Z R 2 L
At the end of mode 1, t = + , IL1 = ILo, Solving ILo for gives,
117
Contd
The critical value of at which Io becomes zero can

be solved by iterative method for known values of ,
R, L and E.
RMS Current
for Thyristor is
AVG Current
for Thyristor is
RMS Output
Current
AVG Output
Current
1
IR
2
1
IA
2
iL d t
iL d t
I rm s I I 2 I R
2
R
2
R
I dc I A I A 2 I A
118
Discontinuous operation
119
Excercises
A single-phase full converter has an RL load of R
= 2.5 , L = 6.5mH. The input voltage is VS = 100
V(rms) at 50 Hz. Determine
(a) the average and rms values of output voltage
and current.
(b) The conversion efficiency.
(c) The conduction losses if VAK ON = 1 V per
device.
(d) The average switching loss if tr = tf = 2 S.
Assume td = ts = 0 and sinusoidal loss curves.
120
Exercises
A single-phase semiconverter has an RL load
of L = 6.5mH, R = 2.5 Ohm, and E = 10 V. The
input voltage is VS = 120 V(rms) at 50 Hz.
Determine
(a) the load current IL0 at t 60
(b) the average thyristor current IA
(c) the rms thyristor current IR
(d) the rms output current Irms
(e) the average output current Idc
121
CAT 1 Questions
1.
2.
3.
4.
5.
Explain the VI characteristics of a four layer, semi-controlled unidirectional power

electronic device which is used in phase controlled ac-dc conversion.
Design a snubber (L1, Rs, Cs) for the thyristor in Fig. 1. The supply voltage is 400 V,
allowable di/dt and dv/dt are 50 kA/ms and 200 kV/ms respectively.
A series thyristor string with ratings 3 kV and 750 A uses thyristors with 800 V and 175 A
rating. Find the number of SCRs to be connected in series and in parallel. Use a derating
factor of 30 %. Determine the values of R and C of static and dynamic equalizing circuits.
Assume the maximum forward blocking current and maximum difference in recovery
charge as 8 mA and 30 C respectively.
A single phase fully controlled converter is connected to a 20 resistance load. Estimate
the average load voltage, average load current and rms load current for a triggering angle
of 300, if the supply voltage is 230V, 50Hz. Derive the formula used. Draw the load
current and load voltage waveforms for the above single phase converter.
Explain the symbol, basic structure and transfer characteristics of different types of
MOSFETs with neat diagrams. Compare an IGBT with MOSFET.
122
Answer Key
1.
2.
Explain the VI characteristics of SCR include explanations for forward VBO, IH, IL, reverse
breakdown voltage.
Answer in Fig.
123
Contd
3.
Answer in Fig. Use the same equations to calculate newly the answer
124
Contd
4.
Vav = 193.3 V
Iav = 9.66 A
Vrms = 226.1 V
Irms = 11.305
Draw the voltage and current waveforms
5.
Explain the required items for four types of

MOSFETS.
125
Performance of 2-pulse converters
Displacement Factor
Input power factor
Harmonic Factor
Effect of overlap
126
Three phase half-wave

controlled converters
(3-pulse converters)
127
Contd
Continuous conduction
Vav
Vrms
Dis-continuous conduction
Vav
Vrms
128
Three phase fully

controlled converters
(6-pulse converters)
129
Contd
Vav
Vrms
Dis-continuous conduction (Assignment -2)
Vav
Vrms
130
Contd
Fourier analysis
Isn
I1
Irms
DF
PF
HF
131
Three phase dual converter
132
Inverter operation of Three phase

full converter
133
Effect of source inductance
134
Assignment - 2
Explain in detail with necessary equations

the operation of three phase full converter
with free wheeling diode at the output
terminals.
135
Three phase Semi-converters (Half

controlled ) (6-pulse converters)
136
Contd
Vav
Vrms
137
AC voltage controllers
Single phase
Using triac advantages, dis-advantages,

application and power level
Using SCR advantages, dis-advantages,
Three phase
Using SCR advantages, dis-advantages,

Connections of star and delta networks,
various topologies
138
Unit III
DC To DC Converters
Step-down and step-up choppers Time ratio control and current limit
control basic oscillating chopper
multi chopper quadrant operation of
chopper.
139
Introduction
140
Contd
Chopper is a static device.

A variable dc voltage is obtained from a constant dc
voltage source.
Also known as dc-to-dc converter.
Widely used for motor control.
Also used in regenerative braking.
Thyristor converter offers greater efficiency, faster
response, lower maintenance, smaller size and
smooth control.
MOSFET/IGBT based converter offers high switching
frequency, lesser filter requirements, faster response,
lower maintenance, smaller size and smooth control.
141
Types of basic Choppers
Step-down choppers.
output voltage is less than input voltage.

output current is more than input current.
Step-up choppers.
output voltage is more than input voltage.

output current is less than input current.
142
Principle of Step-down Chopper

Chopper
i0
V0
143
Contd
A step-down chopper with resistive load.

The thyristor in the circuit acts as a
switch.
When thyristor is ON, supply voltage
appears across the load
When thyristor is OFF, the voltage across
the load is zero.
144
Contd
v0
V
Vdc
t
tON
tOFF
i0
V/R
Idc
t
T
145
Contd
Vdc Average value of output or load voltage.
I dc Average value of output or load current.
tON Time interval for which SCR conducts.
tOFF Time interval for which SCR is OFF.
T tON tOFF Period of switching or chopping period.
1
f Freq. of chopper switching or chopping freq.
T
146
Contd
Average Output Voltage
tON
Vdc V
tON tOFF
tON
Vdc V
V .d
T
tON
but
d duty cycle
t
Average Output Current

Vdc
I dc
R
V tON V
I dc
d
R T R
RMS value of output voltage
1
VO
T
tON
v dt
2
o
147
Contd
But during tON , vo V
Therefore RMS output voltage
1
VO
T
tON
dt
tON
V
VO
tON
.V
T
T
VO d .V
148
Contd
Output power PO VO I O
VO
But
IO
R
Output power
2
O
V
PO
R
2
dV
PO
R
149
Contd
Effective input resistance of chopper
V
Ri
I dc
R
Ri
d
The output voltage can be varied by
varying the duty cycle.
150
Methods of Modulation/Control
The output dc voltage can be varied by the

following methods.
Constant frequency operation with variable
ON time or Pulse width modulation control
with constant frequency operation.
Variable frequency control.
With constant ON time

With constant OFF time
Current limit control

151
Constant frequency operation

with variable ON time
tON is varied keeping chopping frequency

f & chopping period T constant.
Output voltage is varied by varying the
ON time tON
152
Contd
V0
V
tON
tOFF
t
T
V0
V
t
tON
tOFF
153
Variable Frequency Control
Chopping frequency f is varied keeping

either tON or tOFF constant.
To obtain full output voltage range,

frequency has to be varied over a wide
range.
This method produces harmonics in the

output and for large tOFF load current
may become discontinuous
154
Contd
v0
tON
tOFF
t
T
v0
V
tON
tOFF
t
T
155
Current limit control
156
Chopper classifications
157
Quadrant operation of chopper.
158
Oscillating Choppers
Basic Circuit
159
Contd
Modified Circuit
160
Contd
Modified Circuit
161
Contd
Morgans Chopper
162
Unit IV
Inverters
Introduction of basic series and parallel

inverters, single phase Bridge inverters
PWM techniques: Sinusoidal PWM
modified sinusoidal PWM and multiple
PWM- Voltage and harmonic control Series resonant inverter - Current
source inverters.
163
Current source inverters
Adding a large inductance to the dc circuit
164
Contd
Current waveform
165
Contd
Modes of operation
166
Quality of an inverter
Quality is evaluated in terms of the following
Harmonic factor (HF)
Measure of individual harmonic contribution
Distortion factor (DF)
Measure of effectiveness in reducing unwanted harmonics
DF of individual harmonic is
167
Contd
Total harmonic distortion
Measure of closeness of shape between a waveform and

its fundamental
Lower order harmonic
Harmonic component which is closest to the fundamental
168
Unit V
Applications
Regulated power supply, SMPS, UPS ,

DC Circuit Breakers , AC circuit
breakers, HVDC systems, AC and DC
motor control.
169
DC circuit breaker
170
AC circuit breaker
171

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EEE 304

VIT University, Chennai Campus, Chennai.

To get adequate knowledge of the power

To know about electric power conversion

To get a clear exposure on designing the

Obtain the switching characteristic of different types of power

An ability to apply knowledge of mathematics,

Continuous Assessment (30 %)

Assignments / Seminars/ Projects (20 %)

Term - End Examination (50 %)

VIT University, Chennai Campus, Chennai.

VIT University, Chennai Campus, Chennai.

Structure, operation and characteristics

2-pulse, 3-pulse and 6-pulse converters

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VIT University, Chennai Campus, Chennai.

Introduction of basic series and parallel

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Regulated power supply, SMPS, UPS ,

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Muhammad H. Rashid, Power Electronics: Circuits,

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Structure, operation and characteristics

VIT University, Chennai Campus, Chennai.

VIT University, Chennai Campus, Chennai.

VIT University, Chennai Campus, Chennai.

NPN transistors are used widely than PNP transistors. Why?

Students to search and find the answer for this question

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Forward-active (or simply, active): The emitter-base junction is forward biased

Reverse-active (or inverse-active or inverted): By reversing the biasing

Saturation: With both junctions forward-biased, a BJT is in saturation mode and

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VIT University, Chennai Campus, Chennai.

VIT University, Chennai Campus, Chennai.

VIT University, Chennai Campus, Chennai.

Breakdown voltage and current

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Thyristor is a family of devices having 4

Silicon controlled rectifier (SCR) is the most

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Silicon controlled rectifier (SCR)

Used on (HVDC) systems

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VIT University, Chennai Campus, Chennai.

VIT University, Chennai Campus, Chennai.

Effects of gate current

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Estimation of anode current

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Considering PNP transistor

Considering NPN transistor

From the equivalent circuit,

Switching characteristic of SCR

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Methods to Turn-on SCR

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Average ON state current rating

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Bidirectional Triode Thyristors

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VIT University, Chennai Campus, Chennai.

Mode 1(MT2 Positive, Gate Positive)

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