Automotive Devices PDF

SANKEN ELECTRIC CO.,LTD.
CAUTION / WARNING
The information in this publication has been carefully checked and is believed to be
accurate; however, no responsibility is assumed for inaccuracies.
Sanken reserves the right to make changes without further notice to any products herein
in the interest of improvements in the performance, reliability, or manufacturability of its
products. Before placing an order, Sanken advises its customers to obtain the latest
version of the relevant information to verify that the information being relied upon is
current.
Application and operation examples described in this catalog are quoted for the sole
purpose of reference for the use of the products herein and Sanken can assume no
responsibility for any infringement of industrial property rights, intellectual property rights
or any other rights of Sanken or any third party which may result from its use.
When using the products herein, the applicability and suitability of such products for the
intended purpose or object shall be reviewed at the users responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the
occurrence of failure and defect of semiconductor products at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death,
fires or damages to the society due to device failure or malfunction.
Sanken products listed in this catalog are designed and intended for the use as
components in general purpose electronic equipment or apparatus (home appliances,
office equipment, telecommunication equipment, measuring equipment, etc.).
Before placing an order, the users written consent to the specifications is requested.
The use of Sanken products without the written consent of Sanken in the applications
where extremely high reliability is required (aerospace equipment, nuclear power control
systems, life support systems, etc.) is strictly prohibited.
Anti radioactive ray design is not considered for the products listed herein.
This publication shall not be reproduced in whole or in part without prior written approval
from Sanken.
Gallium arsenide is used in some of the products listed in this publication. These
products are dangerous if they are burned or smashed in the process of disposal. It is
also dangerous to drink the liquid or inhale the gas generated by such products when
chemically disposed.
Contents
Examples of Use of Typical Products by Application
.............. 2
1 ICs
1-1. Regulator ICs
................................................................................ 7
Application Note
Dropper Type Regulator ICs
......................................................... 8
Dropper Type System Regulator ICs

Switching Type Regulator ICs
...................................... 16
................................................... 22
1-2. Power Switch ICs

High-side Power Switch ICs
...................................................... 24
Low-side Switch ICs
...................................................... 50
1-3. Motor Driver ICs

Stepper-motor Driver ICs
DC Motor Driver ICs
1-4. HID Lamp Driver ICs
1-5. Custom ICs
............................................................ 56
...................................................................... 60
..................................................................... 64
....................................................................................... 76
2 Discretes
2-1. Transistors
2-1-1. Transistors
............................................................................ 80
2-1-2. Transistor Arrays
............................................................... 96
2-2. MOS FETs

2-2-1. MOS FETs
......................................................................... 108
2-2-2. MOS FET Arrays
............................................................. 117
2-3. Thyristors
2-3-1. Reverse Conducting Thyristors
.............................. 125
2-4. Diodes
2-4-1. Alternator Diodes
........................................................... 127
2-4-2. High-voltage Diodes for Igniter

2-4-3. Power Zener Diodes
................................ 128
..................................................... 129
2-4-4. General-purpose Diodes
............................................ 130
3 LEDs
3-1. Uni-Color LED Lamps
................................................................ 134
3-2. Bi-Color LED Lamps
.................................................................. 137
3-3. Surface Mount LEDs
.................................................................. 138
3-4. Infrared LEDs .................................................................................. 140

3-5. Ultraviolet LEDs
............................................................................ 141
3-6. Multi-chip Modules
.................................................................... 142
Part Number Index in Alphanumeric Order
......................................... 147
Examples of Use of Typical Products by Application

Throttle System
Motor Driver ICs (p.60 and after)
DC
Control IC and full bridge power stage in a single package.
Surface-mounting type series are also available.
SI-5300 / SPF7301
Driver Transistor Arrays (p.99)

Motor
H-bridge of NPN x 2 and PNP x 2 in a single package.
With integrated back emf. clamp diode.
Alternators
SLA8004
driver power transistors (p.68 and after)

Motor
With integrated back emf. clamp diode.
(p.127)
Diodes
Solder and press fit type as well as Zener type is available.
2SA1568 / 2SC4065
SG-9 / SG-10 / SG-14
ICs
Regulator
Custom-made (contact our sales reps.)
Fuel Injectors
transistors (p.84 and after)
Injector
Transistors and MOS FETs are available in discretes and arrays in
various packages.
2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C /

STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103
Headlamps
lamp driver ICs (p.64 and after)
HID
High-voltage controller IC and 4-circuit power stage in a
single package.
Direct drive from CPU.
SLA2402M / SLA2403M / SMA2409M
for HID lamp ignition (p.125 and after)

Thyristors
Best suited to C-discharge SW element on high-voltage
primary side of an igniter.
Integrates a reverse direction diode.
High di/dt resistance
TFC561D / TFC562D
FET arrays for driving HID lamps (p.122)

MOS
4 circuits of N-ch MOS FETs of 450V/7A in a single package.
SMA5113
stepper-motor driver ICs for AFS (p.58 and after)

2-ph
Low output saturation voltage, integrated recovery diode,
surface-mount.
SPF7211
Ignition System
diodes for ignition (p.128)
High-voltage
Withstand voltage range: 0.5 to 15kV
SHV-01JN / SHV-05J / SHV-06JN
2SD2141 / MN638S
ICs
Ignition
Custom-made (contact our sales reps.)
Ignition transistors (p.89 and after)
Room Lamp
Multi-chip LED modules (p.142)

Car Navigation and Audio
Power Steering
Various LEDs (p.133)
driver MOS FETs (p.108 and after)

Motor
Various packages integrating low ON resistors,
bidirectional Zener diodes, etc.
2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 /

2SK3801 / 2SK3803 / 2SK3851
Tail Lamps
LED
Power
Custom-made
(contact our sales reps.)
O2 sensor heater
driver MOS FETs (p.115)
Heater
Low ON resistor and integral gate protection
diode.
FKV460S
Transmission
ABS and VDC
solenoid drivers (high-side power switch ICs) (p.26 and after)

AT
Integral diagnostic function, surface-mount, 2- and 3-circuit types and other
driver MOS FETs (p.108 and after)

Solenoid/motor
Various packages from discretes to arrays.
diverse models.
SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M

AT linear solenoid driver (high-side power switch ICs) (p.46 and after)
Integral current detection resistor, current monitor output, surface-mount and
2SK3710 / FKV660S / SLA5027 / SDK08
driver ICs (p.54)

Solenoid/motor
Surface-mount 4-circuit type with output voltage monitor.
SPF5012
2-circuit types are also available.
SPF5017 / SPF5018
3
1 ICs
1-1. Regulator ICs
Application Note
1-3. Motor Driver ICs
..............................................
Dropper Type Regulator ICs
....................
7
8
Stepper-motor Driver ICs

SLA4708M (50V, 1.5A)
.........................
56
...................................
56
58
SI-3001S (5V/1A, With Output ON/OFF Control) ... 8
SPF7211 (40V, 0.8A)
.....................................
SI-3003S (5V/0.8A, 3-terminal) ....................... 10
DC Motor Driver ICs
....................................
60
SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12
SI-5300 (40V, 5A)
.....................................
60
SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14
SPF7301 (36V, 7A)
.....................................
62
Dropper Type System Regulator ICs
..
16
SI-3322S (5V, Surface-mount) ........................ 16
1-4. HID Lamp Driver ICs
SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18
SLA2402M (500V, 15A) .................................. 64
SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20
SLA2403M (500V, 7A) .................................... 68
...............
22
............................................
22
Switching Type Regulator ICs

SI-3201S (5V/3A)
SMA2409M (500V, 7A) ................................... 72
1-5. Custom ICs
.....................................
76
1-2. Power Switch ICs

High-side Power Switch ICs
...................
24
SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24

SI-5151S (With Diagnostic Function) .............. 26
SI-5153S (With Diagnostic Function, Built-in Zener Diode) 30
SI-5154S (With Diagnostic Function, Built-in Zener Diode) 32
SLA2501M (With Diagnostic Function, 3-circuits) 36
SLA2502M (With Diagnostic Function, 4-circuits) 38
SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40
SPF5017 (Surface-mount 2-circuit, current monitor output function) 46
SPF5018 (Surface-mount, current monitor output function) 48
Low-side Switch ICs
...................................
50
..........
50
SPF5002A (Surface-mount 4-circuits)

SPF5012 (Surface-mount 4-circuits with Output Monitor) 54
Application Note for Regulator ICs

Temperature and Reliability
Reliability of an IC is generally heavily dependent on
operating temperature. Heat radiation must be fully
considered, and an ample margin should be given
to the radiating area in designing heatsinks. When
mounting ICs on heatsinks, always apply silicone
grease and firmly tighten. Air convection should
actively be used in actual heat dissipation. The
reliability of capacitors and coils, the peripheral
components, is also closely related to temperature.
A high operating temperature may reduce the
service life. Exceeding the allowable temperature
may cause coils to be burned or capacitors to be
damaged. Make sure that output smoothing coils
and input/output capacitors do not exceed their
allowable temperature limit in operation. We
recommend, in particular, to provide an ample
margin for the ratings of coils to minimize heat
generation.
Power Dissipation (PD)

1. Dropper Type
PD = IO [VIN (mean) - VO]
V
PD = VO I O ( 100 - 1) - VF IO (1 - O )
VIN
Efficiency
depends on input/output conditions.
Refer to the efficiency characteristics.
VIN : Input voltage
Setting DC Input Voltage

Observe the following precautions when setting the
DC input voltage:
VIN (min) must be at least the set output voltage
plus dropout voltage for the dropper type. It must
be at least the recommended lowest input
voltage for the switching type.
V IN (max) must not exceed the DC input voltage of
the electrical characteristics.
Screw Torque
Screw torque should be between 0.588 to 0.686
[N m] (6.0 to 7.0 [kgf cm]).
Recommended silicone grease
2. Switching Type
VO : Output voltage
generally used. Moreover, the heat dissipation

capacity of a heatsink is heavily dependent on how
it is mounted. It is therefore important and
recommended to measure the heatsink and case
temperature in actual operating environments.
: Efficiency
Volatile type silicone grease may produce cracks

after elapse of long term, resulting in reducing heat
radiation effect.
Silicone grease with low consistency (hard grease)
may cause cracks in the mold resin when screwing
the product to a heatsink.
VF : Diode forward voltage
IO : Output current
Heatsink Design
The maximum junction temperature Tj (max) and the
maximum case temperature Tc (max) given in the
absolute maximum ratings are specific to each
product type and must be strictly met. Thus,
heatsink design must be performed in consideration
of the condition of use which affects the maximum
power dissipation PD (max) and the maximum
ambient temperature Ta (max). To facilitate heatsink
design, the relationship between these two
parameters is presented in the Ta-PD characteristic
graphs. Heatsink design must be performed in the
following steps:
1. Obtain the maximum ambient temperature Ta
(max) (within the set).
2. Obtain the maximum power dissipation P D
(max).
3. Identify the intersection on the Ta-PD characteristic graph and obtain the size of the
heatsink to be used.
The size of a heatsink has been obtained. In actual
applications, a 10 to 20% derating factor is
Type
Suppliers
G746
Shin-Etsu Chemical Co., Ltd.
YG6260
GE Toshiba Silicones Co., Ltd.
SC102
Dow Corning Toray Silicone Co., Ltd.
Others
This product may not be connected in parallel.
The switching type may not be used for current
boosting and stepping up voltage.
Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S
External Dimensions (unit: mm)
Features
Output current of 1.0A
5-terminal type <output on/off control, variable output voltage (rise only)>
Voltage accuracy of 2%
Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A
Built-in overcurrent, overvoltage and thermal protection circuits
Withstands external electromagnetic noises
TO220 equivalent full-mold package
3.2 0.2
4.2 0.2
2.8 0.2
(2.0)
0.950.15
(Ta = 25C)
Ratings
Unit
+0.2
Conditions
DC Input Voltage
VIN
35
Output Control Terminal Voltage
VC
VIN
Output Current
IO
1
1.0 *
PD1
18
With infinite heatsink
PD2
1.5
Stand-alone without heatsink
0.85 0.1
(8.0)
Symbol
(4.6)
Absolute Maximum Ratings
5.0 0.6
2.6 0.1
Parameter
(17.9)
16.90.3
4.00.2
7.90.2
0.5
10.00.2
+0.2
0.1
0.45
P1.70.7 4=6.80.7
3.9 0.7
Power Dissipation
1
Junction Temperature
Tj
40 to +125
Operating Temperature
TOP
40 to +100
Storage Temperature
Tstg
40 to +125
Junction to Case Thermal

Resistance
j-c
5.5
C/W
Junction to Ambient-Air Thermal

Resistance
j-a
66.7
C/W
(4.3)
8.2 0.7
1. GND
2. VC (on/off)
3. Vo
4. Vosense
5. VIN
a: Part No.
b: Lot No.
(Forming No. 1101)
Equivalent Circuit Diagram

Tr1
3
VO
VIN
R1
Electrical Characteristics
Symbol
VIN
Input Voltage
VO
Output Voltage
min
typ
R3
6 *2
4.90
max
30 *1
5.00
Unit
Conditions
e
d
5.10
VIN =12 to 16V, IO = 0.4A
0.5
IO 0.4A
IO 1.0A
VDIF
1.0
Line Regulation
VO LINE
30
mV
IO =0.4A, VIN = 6 to 16V
Load Regulation
VO LOAD
100
mV
IO = 0 to 0.4A
Output Voltage Temperature

Coefficient
VO /T
0.5
mV/C
dB
f =100 to 120Hz
mA
IO = 0A
RREJ
54
Iq
Overcurrent Protection Starting

Current
I S1
3
1.2 *
Output ON
VC, IH
2.0 *
Output OFF
VC, IL
0.8
Output ON
I C, IH
20
VC = 2.7V
Output OFF
I C, IL
0.3
mA
VC = 0.4V
Vc Terminal
R2
1
a : Pre-regulator
GND
b : Output ON/OFF control
c : Thermal protection
d : Over-input and overcurrent protection
e : Drive circuit
f : Error amplifier
g : Reference voltage
Standard Circuit Diagram

D1
Control Voltage
Control Current
VIN
SI-3001S
OPEN
DC input +
Notes:
*1. Since PD (max) = ( VIN VO) IO = 18( W ), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the
Ta -PD curve to compute the corresponding values.
*2. Refer to the dropout voltage.
*3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to 5%.
*4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus,
LS-TTL direct driving is also possible.
R4
Vc
(on/off)
IO =5mA, Ta = 10 to +100C
Quiescent Circuit Current
10
Dropout Voltage
Ripple Rejection
4
VO sense
( Tj= 25C, VIN =14V unless otherwise specified)
Ratings
Parameter
MIC
C1
C2
4
1
CO
DC output
VO
Co :
Output capacitor (47 to 100F, 50V)
C1, C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F).
These are required for inductive input lines or long wiring.
Tantalum capacitors are recommended for C1 and Co,
especially at low temperatures.
Protection diode. Required as protection against reverse
D1 :
biasing between input and output.
(Recommended diode: Sanken EU2Z.)
Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S
Io vs VDIF Characteristicsc
Line Regulation
Load Regulation
5.1
5.1
0.3
0.2
Output voltage VO (V)
IO =
0 (A)
0.4 (A)
1.0 (A)
0.4
Dropout voltage VDIF (V)
0.5
5.0
V IN =
30 ( V)
12 to 16 ( V)
5.5 ( V)
5.0
0.1
4.9
0
0.5
1.0
4.9
10
Output current IO (A)
15
20
25
30
0.5
Output Voltage Temperature Characteristics
Rise Characteristics
5.1
1.0
Input voltage VIN (V)

15
Io = 0 (A)
16(V)
VIN =
30(V)
5.0
14(V)
5.5(V)
VIN IOUT condition

5.5 (V) / 1.0 (A)
12 (V) / 0.4 (A)
14 (V) / 0.4 (A)
16 (V) / 0.4 (A)
30 (V) / 0 (A)
4.9
0
--50
50
100
Load resistance
5
4
3
12 ()
150
10
Io = 0 (A)
VIN = 6 (V)
I o = 0 (A)
VIN = 14 (V)
5
2
1
ON
10 (V)
30 (V)
4
3
5.5 (V)
20 (V)
2
14 (V)
0
0
0.5
1.0
Output ON/OFF control voltage VC (V)
1.5
2.0
2.5
3.0
Ta PD Characteristics
20
Use G746 silicone grease

(Shin-Etsu Chemical) and
aluminum heatsink.
Power Dissipation PD (W)
5
4
3
2
3
2
0
0 125
130
135
140
145
150
155
Ambient temperature Ta (C)
Overvoltage Protection Characteristics
OFF
10
Thermal Protection Characteristics
Overcurrent Protection Characteristics
5
ON/OFF Control Characteristics

6
10
5 ()
Quiescent current lq (mA)
12(V)
Note on Thermal Protection Characteristics:

The thermal protection circuit is intended for protection
against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
short-circuiting over an extended period of time.
15
2002002mm (2.3C/W)
10 1001002mm (5.2C/W)
75752mm (7.6C/W)
1
Without heatsink
0
10
20
30
40
50
0
--30 20
20
40
60
80
100
Operating temperature Ta (C)
Dropper Type Regulator ICs [3-terminal] SI-3003S
Features
3-terminal IC regulator with 0.8A output current

Voltage accuracy of 2%
Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A
Built-in dropping type overcurrent, overvoltage and thermal protection circuits
TO220 equivalent full-mold package
4.2 0.2
3.2 0.2
2.8 0.2
16.9 0.3
7.9 0.2
40.2
0.5
10 0.2
Output current
(Ta =25C)
Symbol
Ratings
Unit
VIN
35
0.8 *
IO
2.6 0.15
Conditions
0.94 0.15
(13.5)
Parameter
DC input voltage
2 max
PD1
22
PD2
1.8
Tj
40 to +150
Operating temperature
TOP
40 to +100
Storage temperature
Tstg
40 to +150
+0.2
0.85 0.1
Power Dissipation
Junction to case thermal resistance
j-c
5.5
C/W
Junction to ambient-air thermal

resistance
j-a
66.7
C/W
Parameter
Symbol
Ratings
Input voltage
VIN
6*2
Output voltage
VO
4.90
Dropout voltage
VO LINE
Load regulation
VO LOAD
Ripple rejection
RREJ
Overcurrent protection starting

current
30 * 1
5.00
5.10
Conditions
VIN
VO
5
0.5
IO 0.5A
1.0
IO 0.8A
30
mV
VIN =8 to 16V
100
mV
IO =0 to 0.5A
dB
f=100 to 120Hz
mA
IO =0A
OCP
VDIF
Line regulation
Quiescent circuit current
max
54
3
Iq
IS1
0.9 *
10
Terminal connections
1. VIN
a: Part No.
2. (NC)
b: Lot No.
3. GND
4. (NC)
5. VO
(Forming No. 1115)
1 2 3 4 5
Unit
typ
0.45 0.1
(root dimensions)
(Tj=25C, VIN =14V, IO =0.5A unless otherwise specified)
min
+0.2
4P1.7 0.15 = 6.8 0.15
DRIVE
Junction temperature
TSD
DET
ERR
REF
3
GND
Notes:
*1. Since P D (max) = (VIN VO) IO =22 (W), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the
Ta P D curve to compute the corresponding values.
*3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, I O=0.5A) drops to 5%.

D1 *2
1
DC input + *1
VIN
C1
C2
N.C
SI-3003S
3
5
4
N.C +
CO
DC output
VO
Co :
*1 C1,C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F).
These are required for inductive input lines or long
wiring. Tantalum capacitors are recommended for C1
and Co, especially at low temperatures.
*2 D1 : Protection diode. Required as protection against reverse
biasing between input and output.
10
Dropper Type Regulator ICs [3-terminal] SI-3003S
Io vs VDIF Characteristics
Line Regulation
Load Regulation
5.1
5.1
0.5
0.3
0.2
5.0
IO =0A
=0.2A
=0.5A
=0.8A
4.9
IO=0.5, 0.8A
=0.2A
=0A
VIN =35V
=25V
=14V
=6V
4.9
0
0
0.2
0.4
0.6
0.8
10
15
20
25
30
35
Output Voltage Temperature Characteristics
Ground current lg (mA)
200
4
3
2
50
100
10
VIN =6V
14V
4
3
2
0
0.5
1.0
1.5
25
30
35
With silicone grease

Heatsink: aluminum
20
200 200 2mm
(2.3C/W)
15
100 100 2mm
(5.2C/W)
10
75 75 2mm
(7.6C/W)
5
Without heatsink
25V
20
35V
15
25
10
VIN =6V
IO=5mA
IO=0.8A
=0.5A
=0.2A
=0A
100
150
150
50
0.8
250
IO =0A
=0.5A
=0.8A
4.9
50
0.6
Circuit Current
VIN / IO:
30V / 0A
14V / 0.5A
6V / 0.8A
0.4
5.1
5.0
0.2
5.0
0.1
Dropout voltage VDIF (V)
0.4
2.0
2.5
0
120
140
160
180
200
0
40
40
80
100

The thermal protection circuit is intended for protection
against heat during instantaneous short-circuiting. Its
operation, including reliability, is not guaranteed for
short-circuiting over an extended period of time.
11
Dropper Type Regulator ICs [2-output] SI-3101S
Features
Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)>
Main output can be externally turned ON/OFF (with ignition switch, etc.)
<most suitable as memory backup power supply>
Low standby current ( 0.8mA)
Low dropout voltage 1V
TO220 equivalent 5-terminal full-mold package
3.2 0.2
4.2 0.2
2.8 0.2
16.9 0.3
4.0 0.2
7.9 0.2
0.5
10.0 0.2
2.6 0.1
5.0 0.6
(2.0)
0.95 0.15
(Ta=25C)
Ratings
Unit
DC input voltage
VIN
40
Battery reverse connection
VINB
13 * 6
+0.2
0.85 0.1
Conditions
(8.0)
Symbol
(4.6)

Parameter
(17.9)
+0.2
0.1
0.45
VC
VIN
CH1
IO1
0.07 *
CH2
IO2
0.4 * 1
PD1
18
PD2
1.5
Tj
40 to +125
TOP
40 to +115
Storage temperature
Tstg
40 to +125
Output control terminal voltage
P1.7 0.7 4 = 6.80.7
One minute
3.9
(4.3)
8.2 0.7
V
1
1. VIN
2. VC (on/off)
3. GND
4. VO1
5. VO2
Output current
1
a: Part No.
b: Lot No.
Power Dissipation
Junction Temperature
j-c
5.5
C/W

resistance
j-a
66.7
C/W
(Forming No. 1101)

VO1
VIN
1
DRIVE
OCP
TSD
DET
ERR
(Tj=25C, VIN =14V unless otherwise specified)
REF
Ratings
Parameter
Symbol
min
typ
max
Unit
VO2
Conditions
OCP
6 *2
35 * 1
OVP
CH1
VO1
4.80
5.00
5.20
CH2
VO2
4.80
5.00
5.20
IO =0.3A
0.1
IO1 =0 to 0.05A
IO2 =0 to 0.3A
DRIVE
VIN
Input voltage
IO =0.05A
DET
ERR
Output voltage
Channel-channel voltage difference

(VO1 VO2)
Dropout voltage
Line regulation
VO
0.1
CH1
VDIF1
1.0
IO1 0.05A
CH2
VDIF2
1.0
IO2 0.4A
CH1
VO LINE1
10
30
mV
VIN =6 to 18V, IO =0.05A
CH2
VO LINE2
10
30
mV
VIN =6 to 18V, IO =0.3A
CH1
VO LOAD1
30
70
mV
IO1=0 to 0.05A
CH2
VO LOAD2
40
70
mV
IO2 =0 to 0.3A
2
VC
GND
CONT

D3
Load regulation
D2
VIN
CH1
RREJ1
54
dB
f =100 to 120Hz
CH2
RREJ2
54
dB
f =100 to 120Hz
mA
IO1=0A, VC =0V
SI- 3101S
D1
Ripple rejection

Overcurrent protection
starting current
0.8
Iq
CH1
I (S1) 1
CIN
3
0.1 *
0.5 * 3
I (S1) 2
VCH
4.2
4.5
4.8
Output OFF
VCL
3.2
3.5
3.8
Output ON
I CH
100
VC =4.8V
Output OFF
I CL
VC =3.2V
Output control voltage
Overvoltage protection starting

voltage
VOVP
35 * 4
Thermal protection starting

temperature
TTSD
130 * 5
Notes:
*1. Since P D (max) = (VIN VO) IO1 + (VIN VO2) IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on
operating conditions. Refer to the TaPD curve to compute the corresponding values.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to 5%.
*4. Overvoltage protection circuit is built only in CH2 (VO2 side).
*5. The indicated temperatures are junction temperatures.
*6. All terminals, except VIN and GND, are open.
12
4
VO1
GND
CO1
+
CO2
CH2
100
Output ON
Output control current
VC
VO2
5
CO1 :
CO2 :
*1 CIN :

Input capacitors (approx. 47F).
Tantalum capacitors are recommended for CO1, CO2
and CIN, especially at low temperatures.
*2 D1, D2, D3 : Protection diode.
Required as protection against reverse biasing
between input and output.
Line Regulation (2)
5.1
Load Regulation (1)

5.1
5.1
VC = 5 (V)
I O1 = 0 (A)
I O1 =
0mA
50mA
5.0
70mA
4.9
I O2 =
0A
0.3A
5.0
0.5A
10
15
20
0
0
25
V IN =
6V 14V
Input voltage V IN (V)
10
15
20
25
10
5.1
20
30
40
50
60
70
Output current IO (mA)
Load Regulation (2)
22V
5.0
4.9
4.9
0
0
VC = 5 (V)
I O1 = 0 (A)
10
V IN =
6V,14V
5.0
I O1 = 0 (A)
Vc = 0 (V)
5
VC = 5 (V)
I O2 = 0 (A)
22V
VC = 5 (V)
IO2 = 0 (A)
Line Regulation (1)
Load resistor
100
3
2
71.4
4.9
0.1
0.2
0.3
0.4
0.5
0.6
5
Output voltage VO1 (V)
6V
3
2
OFF
ON
10
0
0
IO2 = 0 (A)
VC = 5 (V)
4.5V
VIN =
6V
14V
22V
I O1 = 0 (A)
VC = 5 (V)
3
2
1
0
0.05
0.1
0.15
0.1
0.2 0.3 0.4
TaPD Characteristics
20
VIN = 6 (V)
I O1 = I O2 = 5 (mA)
With silicone grease G746

(Shin-Etsu Chemical)
Heatsink: aluminum
4
3
2
VO1
4
IO1 = I O2 = 5 (mA)
VC = 5 (V)
VO2
0.5 0.6 0.7 0.8
20
4.5V
15
Overcurrent Protection Characteristics (2)
V IN =
6V
14V
22V
10

6
V IN =
14V, 22V
15
200 200 2mm (2.3C/W)
10 100 100 2mm (5.2C/W)

75 75 2mm (7.6C/W)
5
Without heatsink
130
140
150
160

The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time.
10
20
30
40
0
--30 --20 0
20
40
60
80
100 115
13
Features
Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)>
Main output can be externally turned ON/OFF (with ignition switch, etc.)
<most suitable as memory backup power supply>
Low standby current ( 0.8mA)
Low dropout voltage 1V
TO220 equivalent 5-terminal full-mold miniature package
3.2 0.2
4.2 0.2
2.8 0.2
(17.9)
16.9 0.3
4.0 0.2
7.9 0.2
0.5
10.0 0.2
2.6 0.1
Ratings
Unit
DC input voltage
VIN
35
Battery reverse connection
VINB
13 * 6
VC
VIN
CH1
IO1
0.04 * 1
CH2
IO2
0.1 * 1
5.0 0.6
0.95 0.15
(Ta=25C)
Symbol
+0.2
Conditions
0.85 0.1
(8.0)
Parameter
(4.6)
(2.0)
+0.2
0.1
0.45
Output current
One minute
3.9 0.7
P1.7 0.7 4 = 6.8 0.7
PD1
22
PD2
1.8
Tj
40 to +150
TOP
40 to +105
Storage temperature
Tstg
1. VIN
2. VC (on/off)
3. GND
4. VO1
5. VO2
Power Dissipation
40 to +150
j-c
5.5
C/W

resistance
j-a
66.7
C/W
(4.3)
8.2 0.7
a: Part No.
b: Lot No.
(Forming No. 1101)

VO1
VIN
1
Parameter
Symbol
VIN
Input voltage
TSD
(Tj = 25C, VIN = 14V unless otherwise specified)
Ratings
min
typ
6 *2
max
Unit
30 * 1
Conditions
REF
VO1
4.80
5.00
5.20
IO = 0.04A
CH2
VO2
4.80
5.00
5.20
IO = 0.1A
0.1
IO1 =0 to 0.04A
IO2 =0 to 0.1A
1.0
IO1 0.04A
IO2 0.1A
OCP
Output voltage
Dropout voltage
CH1
VO
0.1
VDIF1
5
VO2
CH1
Channel-channel voltage difference

(VO1 VO2)
DET
ERR
CH2
VDIF2
1.0
CH1
VO LINE1
10
50
mV
CH2
VO LINE2
10
50
mV
VIN = 6 to 30V, IO = 0.1A
CH1
VO LOAD1
30
70
mV
IO1 = 0 to 0.04A
70
mV
IO2 = 0 to 0.1A
OVP
DRIVE
DRIVE
OCP
DET
ERR
2
VC
GND
CONT
VIN = 6 to 30V, IO = 0.04A
Line regulation
Load regulation
CH2
VO LOAD2
40
CH1
RREJ1
54
dB
f = 100 to 120Hz
CH2
RREJ2
54
dB
f = 100 to 120Hz
mA
IO1 = 0A, VC = 0V
Ripple rejection
starting current
0.8
Iq
CH1
I (S1) 1
0.06 *
CH2
I (S1) 2
0.15 *
Output ON
VCH
4.2
Output OFF
VCL
Output ON
I CH
Output OFF
I CL

D3
D2
VIN
4.5
4.8
3.2
3.5
Output control current

100

voltage
VOVP
30 *

temperature
TTSD
151 *
3.8
100
VC = 4.8V
VC = 3.2V
CIN
2
VC
Notes:
*1. Since P D (max) = (VIN VO) IO1 + (VIN VO2) IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on
operating conditions. Refer to the TaPD curve to compute the corresponding values.
*3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to 5%.
*4. Overvoltage protection circuit is built only in CH2 (VO2 side).
*5. The indicated temperatures are junction temperatures.
*6. All terminals, except VIN and GND, are open.
14
SI- 3102S
D1
Output control voltage
CO1 :
CO2 :
*1 CIN :
VO2
5
1
3
4
VO1
GND
CO1
+
CO2

Input capacitors (approx. 47F).
Tantalum capacitors are recommended, for CO1,
CO2 and CIN, especially at low temperatures.
*2 D1, D2, D3 : Protection diode.
Required as protection against reverse biasing
between input and output.
Line Regulation (1)
Line Regulation (2)
5.10
Load Regulation (1)
5.10
5.10
VIN = VC
IO2 = 5mA
VIN = VC
IO1 = 5mA
VIN = VC
5.05
IO1 =
0A
20mA
40mA
5.00
4.95
4.90
5.05
IO2 =
0A
50mA
100mA
5.00
5.05
4.95
4.90
4.85
5
10
15
20
25
30
35
4.95
4.90
4.85
0
VIN =
6V
14V
30V
5.00
4.85
0
10
15
20
25
30
35
10
Load Regulation (2)
5.10
20
30
12
10
VC = 0V
IO1 = 0A
VIN =
6V,14V
5.00
4.95
30V
4.90
4
IO1 = 0A
20mA
40mA
3
2
1
4.85
0
40
60
80
100
OFF
ON
VIN =
6V
14V
30V
3
2
4
VIN =
6V
14V
30V
3
2
0
0
20
40
60
80
100
120
0.1
VIN = VC
IO2 = 5mA
VO1
4
3
VO2
0
100
0
26
0.4
0.5
25
VIN = 6V
IO1 = IO2 = 5mA
0.3
0.2
Output current IO2 (A)
35
30
25
VIN = VC
IO1 = 5mA
20
15
10
VIN = VC
IO2 = 5mA
VIN = 14V
IO2 = 5mA
0
0
5.05
20
50
6
VIN = VC
40
With silicone grease G746

(Shin-Etsu Chemical)
Heatsink: aluminum
20
200 200 2mm
(2.3C/W)
15
100 100 2mm
(5.2C/W)
10
75 75 2mm
(7.6C/W)
5
Without heatsink
120
140
180
200
220
240

The thermal protection circuit is intended for protection against heat
during instantaneous short-circuiting. Its operation, including reliability,
is not guaranteed for short-circuiting over an extended period of time.
28
30
32
34
36
38
0
40 20 0
20 40 60 80 100 120 140 160
15
Dropper Type System Regulator ICs SI-3322S
Features
High accuracy output of 5V30mV
Memory backup power supply 4V0.2V
Power on reset function
Supply voltage monitor function
Watch dog timer
CR not required for setting external time constant
Index area
SI-3322S
Lot
SKA
7.40 10.00
7.60 10.65
Lot
3
0.25
45
0.75
Adhesive surface
10.10
10.50
0.23
0.32
2.35
2.65

Parameter
Symbol
0.33
0.51
Applicable terminals
BAI, VCC, VNMIC
VIN (1)
Ratings
Unit
0.3 to 32
0.3 to 7
0.10
0.30
1.27 BSC
Conditions
0.40
1.27
0 to 8
Coplanarity
(height difference among leads)
0.1mm max.
VS, NMIC, RSTTC, OUTE

Terminal voltage
VSC, NMI, RESET, OUTE
VIN (2)
W/D, STBY
Standard Connection Diagram
Storage temperature
Tstg
40 to +125
Top
40 to +105
PD
1.4
Power dissipation
+
IG. SW
+
47F
R2
(Ta = 25C unless otherwise specified)
Parameter
Symbol
min
typ
max
Unit
VSC
3.8
4.2
BAI = 4.2 to 16V, ISC = 0.2mA
VS
4.97
5.03
VCC = 5.2 to 16V, IO = 350mA
VS VSC voltage difference
VS
0.3
BAI input current
I BAI
0.6
mA
VCC input current
I CC
mA
VCC = 3 to 16V
VB input current
IB
25
mA
VCC = 3 to 16V
VCC = 5.2V, ISC = 50mA

BAI = 4.9 to 16V, ISC = 0.2mA
20
mA
VCC = BAI = 3 to 16V, ISC = 0mA
NMIC input current
I NMIC
0.04
0.1
0.4
mA
VCC = BAI = 14V
W/D input current
I W/D
0.04
0.1
0.4
mA
VCC = BAI = 14V
RSTTC input current
I RTC
0.04
0.1
0.4
mA
Lo
VNIL
4.9
5.1
Hysteresis
VN
0.12
0.3
NMI judge voltage

Hi
VNOH
Lo
VNOL
Hi
VSOH
VSOL
VROH
Lo
VROL
Hi
VUOH
Lo
VUOL
Hi
VTOH
Lo
VTOL
VNMIC VCC
1
BAI
+
VB
VS
VSC
VS0.5
0.6
SI-3322S
VS0.5
0.6
VS0.5
STBY
R1, R2: NMI judge voltage (5V typ) variable resistor

NMI judge voltage (R1 + R2) 2.5V/R2
R1, R2 2k
Normally, VNMIC terminal is open.
Isource = 1mA
Isink = 0.5mA
Isource = 1mA
Isink = 0.5mA
Isource = 1mA
Isink = 0.5mA
VS0.5
Isource = 1mA
Isink = 0.5mA
STBY
12
RESET
RSTTC: Normally open.

GND connected when TRE
is to be halved.
VNMIC
6
VCC
5
VB
VSC
VS
4
+
Current
limit circuit
Main
regulator
BAI 1
9 NMI
NMI judge
circuit
Backup regulator
Reference
oscillation
circuit
RESET output voltage

0.6
Microcomputer
Circuit Block Diagram
Start
circuit
AVCC
NMI
15
RESET
GND
VCC = BAI = 14V
VCC
9
NMI
Logic circuit
STBY output voltage

Hi
NMIC OUTE OUTE W/D RSTTC

W/D NMI Control GND
13
11
10
16
14
OPEN or GND
NMIC = 0V
NMI output voltage
Lo
Conditions
VSC output voltage
IS
VS output voltage
VS input current
47F
BATT
Ratings
+
68F
120
6
A/D converter,
I/O circuit, etc.
47F
R1
Ta = 25C
OUTE
control
circuit
GND 8
Counter
Frequency
comparator
STBY
control
circuit
15 STBY
RESET
control
circuit
12 RESET
OUTE output voltage

0.6
VS0.5
Isource = 1mA
0.6
Isink = 0.5mA
13
NMIC
11
OUTE
10
OUTE
16
W/D
14
RSTTC
OUTE output voltage

TST
10
20
ms
Reset release time
TRE
60
75
90
ms
Reset cycle
TRC
40
50
60
ms
Reset period
TRP
20
25
30
ms
W/D signal stop detect period
TWS
10
12.5
15
ms
Standby release time
Reset signal output time
TNR
80
Standby signal output time
TRS
10
W/D fail judge frequency
FFH
Out enable release time
TWE
40
s
s
50
Notes: The direction of current flowing into the IC is positive (+).
kHz
10
ms
Timing Chart
VCC
VS
(BAI=14V)
VSC
0V
0V
NMI
STBY
TRS
TST
TRP
TRE
TNR
RESET
OUTE
TWS
TRC
TWE
OUTE
W/D
HI or Lo
Power on
16
VNIL
VNIL+VN
W/D input stop W/D input start

(microcomputer (microcomputer
resets)
runaway)
Power off
Dropper Type System Regulator ICs SI-3322S
VS Line Regulation
VS Load Regulation
VS Rise Characteristics
5.03
5.03
5.02
5.02
5.01
VS (V)
VS (V)
IO = 0A
5
4.99
5
4.99
0.4A
4.98
4.97
VS (V)
IO = 0A
5.01
10
15
20
12V
VCC = 5.2V
4.97
25
0.4A
2
4.98
0.2
0.4
VCC (V)
0.6
0.8
1.0
1.2
0
0
1.4
VS Overcurrent Protection Characteristics
VCC Input Current
10
VCC (V)
IO (A)
VB Input Current
20
No load
5
4
15
3
VCC = 7V
I B (mA)
ICC (mA)
VS (V)
10
2
12V
1
0
0.5
1.5
10
IO (A)
15
20
VCC (V)
VS Input Current
VSC Rise Characteristics
15
20
VSC Overcurrent Protection Characteristics
20
10
VCC (V)
No load
5
4
15
10
VSC (V)
VSC (V)
IS (mA)
4
3
3
2
5
1
10
15
20
10
VCC (V)
15
20
BAI (V)
BAI Input Current
10
ISC (A)
VS-VSC Voltage Difference
NMI Judge Voltage Characteristics
500
500
No load
5
400
400
200
300
NMI (V)
VS (mV)
IBAI (A)
4
300
200
3
2
100
100
0
0
10
BAI (V)
15
20
20
40
60
ISC (mA)
80
100
120
0
4.5
4.7
4.9
5.1
5.3
5.5
VCC (V)
17
Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004
Features
Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A)
Watchdog timer
Built-in drooping type overcurrent and thermal protection circuits (ch1)
DC input voltage
VIN
EN
Output current
0.3 to 35
0.4
0.2
W/D/C
TC terminal input voltage
TC
CK terminal input voltage
CK
Vo1-fail terminal output voltage
Vo1-fail
Reset terminal output voltage
RESET
+0.2
2.0 0.8
Reverse connection 1 min max.
8
+0.15
1.270.25
400mS
40
Io2
Remarks
40
Io1
W/D/C terminal input voltage
Unit
13 to 35
CH2
MODE
Fin
thickness
(Ta=25C)
Ratings
CH1
MODE terminal input voltage
1.0 0.05
9
0.4 0.05
2.50.2
Symbol
+0.1
10.50.2
16
7.50.2

Parameter
12.20.2
400mS
+0.15
0.25 0.05
0.3 to 7
Tj
40 to 150
Storage temperature
Tstg
40 to 150
Thermal resistance
(junction to case)
j-c
4.1
C/W
Thermal resistance
(junction to ambient air)
j-a
38
C/W
With glass epoxy + copper foil board (size 5.0 x 7.4cm;

t: glass epoxy = 1.6mm/copper foil = 18m)
D1
Vo1
Vin
EN
Vo1
SPF3004
Cin
Vo1 fail
MODE
Co1
Vo2
Load
Battery
Parameter
Output voltage
Dropout voltage
Ripple rejection
min
max
5.00
5.10
CH1
Vo1
4.85
5.00
5.15
CH2
Vo2
3.15
3.30
3.45
VIN = Vo1+VDIF1 to 18V,

Io1 = 0 to 0.4A, Tj = 40 to 125C
VIN = Vo1+VDIF1 to 18V,
Io1 = 0 to 0.4A, Tj = 40 to 150C
VIN = Vo2+VDIF1+VDIF2 to 18V,
Io1 = 0 to 0.2A
CH1
CH1
CH2
CH1
CH2
VDIF11
VDIF12
VDIF2
RREJ1
RREJ2
0.5
0.25
0.5
Io1 = 0.4A
Io1 = 0.2A, Tj = 25C
Io2 = 0.2A
Iq
Overcurrent protection CH1

starting current
CH2
CH1
Residual current
at a short
CH2
EN output control voltage
VENth
ON
OFF
Vo1-fail terminal LOW voltage
Vo1-fail terminal HI voltage
Reset terminal LOW voltage
Reset terminal HI voltage
CH1
Reset detect voltage
CH2
0.402
0.201
0.402
0.201
1.0
0.9
50
250
10
100
1.80
0.80
1.80
0.80
3.5
3.5
50
30
1.0
0.5
IENH1
IENH2
1.0
IENL
Vfail L
Vfail H
Vo10.8V * 5
0.5
VRSL
VRSH
Vo10.8V * 5
Vo1thH
Vo1 0.97
Vo1thL
4.05
Vo2thH
Vo2 0.985
Vo2thL
3.00
Vo1th
0.255
Vo2th
0.105
tdly
0.70 Rtc Ctc 0.72 Rtc Ctc 0.74 Rtc Ctc
twd
twdp
Vmodeth
1.0
3.0
ImodeH
200
ImodeL
1.0
1.0
Vw/d/cth
3.0
1.0
Iw/d/cH
200
Iw/d/cL
1.0
1.0
Vckth
3.0
1.0
IckH
200
IckL
1.0
1.0
db
f = 100 to 200Hz
VIN = 16V, EN = 0V
VIN = 35V, EN = 0V
mA
mA
A
A
V
A
V
V
V
V
V
V
V
V
V
V
S
S
S
V
Io1 = Io2 = 0.2A

Vo1 = 4.5V
Vo2 = 2.8V
Vo1 = 0V
Vo2 = 0V
Tj = 40 to 125C
Rtc
Load
+
Co2
Ctc
Cin: Capacitor (39F) for oscillation prevention

CO1: Output capacitor (39F)
Tantalum capacitors are recommended especially for low
temperatures.
D1, D2: Protection diodes.
Required as protection against reverse biasing between input
and output (Recommended diode: SANKEN EU2Z).
Timing Chart
*8
EN = 6.4V, Tj = 40 to 125C
EN = 3.51V, Tj = 40 to 125C
EN = 0V, Tj = 40 to 125C
Isink = 250A, (Pull-up resistance 20k typ)
Isource = 15A
Isink = 250A, (Pull-up resistance 20k typ)
Isource = 15A
Vrs, Vfail 4.5V
Vrs, Vfail 0.8V
Vrs 3.0V
Vrs 0.8V
Vo1th = Vo1thH-Vo1thL
Vo2th = Vo2thH-Vo2thL
Min. set time: 6mS
Min. set time: 4mS
Min. set time: 400S
CH1
CH2
Power on reset delay time
W/D time
W/D pulse time
MODE terminal control voltage
MODE = 5V
ON
MODE terminal
A
control current
MODE = 0V, Tj = 40 to 125C
OFF
V
W/D/C terminal control voltage
*7
W/D/C = 5V
ON
W/D/C terminal
A
control current
W/D/C = 0V, Tj = 40 to 125C
OFF
V
Min. clock pulse time = 5S (Duty 50%)
CK terminal control voltage
CK = 5V
ON
CK terminal control
A
current
CK = 0V, Tj = 40 to 125C
OFF
Notes:
*3: Refer to dropout voltage.
*4: Since PD (max) = {(VINVO1) (IO1+ IO2)} + (VIN Iq) + {(VO1VO2) IO2 } = 30W, VIN (max), IO1(max) and I O2(max) may be limited
depending on operating conditions.
*5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits.
*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155
C (min.) and 165C (typ). These values represent the design warranty.
*7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of
RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur.
*8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150C is 16mS (0.32V/mS) max.

hysteresis width
TC
Conditions
4.90
IGND
Is11
Is21
Is21
Is22
35 * 4
Unit
Vo1+VDIF1 * 3
54
54
10
50
5
70
CK
D2
Ratings
typ
VIN
GND current
18
Symbol
Vo1
EN output control
current
W/D/C
CH1
Input voltage
RESET
GND
Vin
EN (ON) operation
EN
EN (OFF) operation
OCP
operation
Vo1thH
Vo1thL
Vo1
Reset
operation
Vo1 fail
(Vo1 pull-up)
OCP
operation
Reset
operation
Vo2
Vo2thL
Vo2thH
MODE
(Vo1 system connection)
Vmodeth
Vo1 pull-up status
Open status
TC
(3.3 pull-up)
RESET
W/D/C
tdly
tdly
twd
(Vo1 system connection)
tdly-twdp
twdp
Open status
CK
W/D
Stop period
Rise Characteristics of Output Voltage
Line Regulation (V01)
IO2=0A
0.2A
3.50
IO1=0A
0.4A
Output voltage VO1, VO2 (V)
5.10
5.00
IO1=0A
0.2A
0.4A
10
IO2 =0A
0.1A
0.2A
3.30
4.90
0
3.40
10
20
30
40
10
Load Regulation (V01)
20
30
40
Dropout Voltage (V01)

1.0
3.40
VIN =6V
10V
14V
18V
0.5
3.30
4.90
0
Dropout voltage
VIN =6V
10V
14V
18V
5.00
Vdif1 (V)
3.50
5.10
0.1
0.2
0.3
0.4
0.05
0.10
0.15
0.20
0.2
GND Current
0.4
0.6
Overcurrent Protection Characteristics (V01)
IO1=0.4A
20
IO1=0.2A
IO1=0A
10
20
30
VIN =6V
10V
14V
18V
2
40
4
GND current IGND (mA)
40
0.5
1.0
0.2
0.4
0.6
EN Terminal Output Voltage
IO1=5mA
0
120
140
160
180
200
Power dissipation PD (W)
40
100
VIN =6V
10V
14V
18V
EN terminal voltage VEN (V)
30
Infinite heatsink equivalent

(Tc=25C)
20
10
Copper foil area

(5.07.4mm, t=1m)
0
-40
25
50
85
125 150
19
Features
Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A)
Watchdog timer
Built-in drooping type overcurrent and thermal protection circuits (ch1)
12.20.2
(Ta=25C)
Ratings
Unit
Remarks
13 to 35
Reverse connection 1 min max.
Vo1, Vo2 output control terminal voltage
EN
0.3 to 35
Vo2 output control terminal voltage
VC
0.3 to 35
CH1
Io1
0.4
CH2
Io2
0.2
TC terminal input voltage
8
+0.15
1.270.25
0.4 0.05
2.50.2
VIN2
Output current
+0.2
VIN1
DC input voltage
Fin
thickness
2.0 0.8
Symbol
1.0 0.05
9
7.50.2

Parameter
+0.1
10.50.2
16
+0.15
0.250.05
TC
CK terminal input voltage
CK
0.3 to 7
W/D/C terminal input voltage
W/D/C
Reset terminal output voltage
RESET
P D1
Power dissipation
18.6
P D2
2.97
Tj
40 to 150
With an infinite heatsink mounted.

D1
*1
Vin1
EN
Vin2
Top
40 to 105
Storage temperature
Thermal resistance
(junction to case)
Tstg
40 to 150
j-c
6.7
C/W
With an infinite heatsink mounted.
C/W
*1
Thermal resistance
42
j-a
Battery
Cin
Vc
Vo1
3Pin
4Pin
2Pin
14Pin
6Pin
SFP3006 7Pin
5Pin
1,9,
12,13Pin
GND
RESET
Rtc
Co1
Vo2
8Pin
10Pin 11Pin
Tc
W/D/C
CK
Load
Ctc
D2
Notes: *1: With glass epoxy + copper foil board (size 5.0 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18m)
* The regulator IC may be used only
with Vo1 (single output power
supply) by selecting NC (open) for
5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.
Load
Co2
Parameter
Symbol
Input voltage
Output voltage
Dropout voltage
Ripple rejection
max
35
CH1
Vo1
4.85
5.00
5.15
CH2
Vo2
4.85
5.00
5.15
CH1
VDIF1
0.5
CH2
VDIF2
0.5
CH1
RREJ1
54
CH2
RREJ2
54
Iq
IGND
10
mA
70
100
mA
Is21
0.201
0.8
CH1
Is21
0.402
1.8
CH2
Is22
0.201
0.8
VENth
0.9
3.5
IENL
Reset terminal LOW voltage
VRSL
Reset terminal HI voltage
VRSH
CH
50
1.0
1.0
0.5
Vo1-0.8V
Vo1thH
Vo1 0.97
VIN1 = 6 to 18V, Io = 0 to 0.3A
f = 100 to 120Hz
VIN1 = 16V, VEN = 0V
VIN1 = 35V, VEN = 0V
(2 Pin)
A
V
Isink = 250A
(Pull-up resistance 20k typ)
Isource = 15A
Vrs
4.5V
0.8V
Min. set time: 4mS
Min. set time: 400S
IckL
1.0
3.0
V
A
1.0
Min. clock pulse time: 5s (Duty 50%)

VCK = 5V
VCK = 0V
1.0
IcH
Vc output control current

W/D/C terminal control voltage
W/D/C terminal control
current
Vcth
3.5
300
IcL
1.0
1.0
Vw/d/cth
1.0
3.0
200
ON
Iw/d/cH
OFF
Iw/d/cL
1.0
1.0
20
TC
CK
(8 Pin)
(10 Pin)
Timing Chart
Vin1,
Vin2
(+B)
EN
ENthL
ENthH
Vo1thH
Vo1thL
Vo
Vc = 0V
Vo2
VW/D/C = 5V
RESET
VW/D/C = 0V
CK
(Main power supply)
TC
Notes:
*2: Refer to Dropout Voltage.
*3: Since PD (max) = (VINVO1) IO1+ (VIN2VO2) IO2 + (VIN Iq) = 22W, VIN (max), IO1(max) and I O2(max) may be limited
depending on operating conditions.
*4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits.
*6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151
C (min.) and 165C (typ). These values represent the design warranty.
(11 Pin)
(1,9,12,13 Pin)
(BACK UP power supply)
Vc = 5V
W/D/C
GND
Vo1
Vc output control voltage
Drive2
OCP2
*4
t wd
200
(7 Pin)
(5 Pin)
EN = 0V
t wdp
OFF
(14 Pin)
Vo2
Vc
(Vo2: EN)
Vc
W/D pulse time
1.0
Err.
D
E
T
RESET
(6 Pin)
EN = 5V
W/D time
IckH
Err.
Vo1
RESET
W/D
Vin2
Min. set time: 6mS
Vckth
Drive1
OCP1
D
E
T
Vo2 = 0V
Vrs
ON
EN
TSD
EN
Vo1 = 0V
CK terminal control
current
(4 Pin)
(3 Pin)
Vo2 = 4.5V
CK terminal control voltage
Vo1
Vin1
Vo1 = 4.5V
4.05
Circuit Block Diagram
Io1 = Io2 = 0.2A
t dly
Vo1thL
Power on reset delay time
Cin: Capacitor (39F) for oscillation prevention

Tantalum capacitors are recommended particularly for low
temperatures (tantalum capacitors of about 0.47 F in parallel).
D1, D2: Protection diodes.
Required for protection against reverse biasing between input
and output (Recommended diode: SANKEN EU2Z).
50
CH2
Conditions
* 2, 3
VIN2 = 6 to 18V, Io = 0 to 0.3A
250
1.8
OFF
50
0.402
IENH
10
Is11
ON
Unit
db
CH1
EN output control voltage

EN output control
current
Ratings
typ
Vo1+VDIF1
GND current
Residual current
at a short
min
VIN1, 2
starting current
W/D/C
tdly
twd
twdp
W/D OFF
mode
Rise Characteristics of Output Voltage (V01)
Rise Characteristics of Output Voltage (V02)
IO1=0A
0.2A
0.4A
2
5.10
IO2 =0A
0.2A
0.4A
2
0
0
10
5.05
5.05
5.05
5.00
IO1=0A
0.1A
0.2A
4.95
4.90
15
20
25
5.00
VIN =6V
10V
14V
18V
4.95
4.90
30
5.10
10
10
0.1
0.2
0.3
0.05
0.10
0.15
0.20

6
Vdif2 (V)
Dropout voltage
0.2
30
0.6
0.4
25
VIN =6V
10V
14V
18V
4.95
4.90
0.4
0.6
20
5.00
15
5.10
5.10
IO1=0A
0.2A
0.4A
4.95
10
5.00
Vdif1 (V)
5.05
4.90
0
Dropout voltage
0.4
Ta=150C
25C
40C
0.2
VIN =6V
10V
14V
18V
2
Ta=150C
25C
40C
0
0.2
0.4
0.1
0.2
0
0
0.2
0.4
0.6
16
0.8
20
IO1=5mA
VIN =6V
10V
14V
18V
0.6
0.4
0.2
0
100
125
150
175
200
Infinite heatsink
equivalent
(Tc=25C)
12
0
-50
Copper foil area

(5.07.4mm, t=18m)
50
100
150
21
Switching Type Regulator ICs SI-3201S
Features
Output current of 3A (Ta = 25C, VIN = 8 to 18V)
High efficiency of 82% (VIN = 14V, I O = 2A)
Requires 5 external components only
Built-in reference oscillator (60kHz)
Phase internally corrected
Output voltage internally corrected
Built-in overcurrent and thermal protection circuits
Built-in soft start circuit
3.2 0.2
4.2 0.2
2.8 0.2
(17.9)
16.9 0.3
7.9 0.2
4.0 0.2
0.5
10.0 0.2
2.6 0.1
5.0 0.6
(2.0)
0.95 0.15
Symbol
Ratings
Unit
+0.2
Input voltage
VIN
35
Output voltage
IO
0.85 0.1
Conditions
(8.0)
Parameter
(Ta=25C)
(4.6)
+0.2
0.1
0.45
SWOUT terminal voltage
VSWOUT
PD1
22
1.8
Tj
40 to +150
Storage temperature
Tstg
40 to +125
j-c
5.5
C/W

resistance
j-a
66.7
C/W
Output current
a: Part No.
b: Lot No.
(Forming No. 1101)
VIN
SI-3201S
VIN
VIN
typ
max
18
Unit
Conditions
IO
0.5
Top
40
+85
C1
D1
5 SS
h
C3
TaPD characteristics
VO
SWOUT
b
d
L1
SW Tr
a
c
Ratings
Symbol
min
Input voltage
Stand-alone
Recommended Operating Conditions

Parameter
1. VIN
2. SWOUT
3. GND
4. VS
5. SS

1
PD2
(4.3)
8.2 0.7
Power Dissipation
3.9 0.7
P1.7 0.7 4 = 6.8 0.7
GND
VS
C2
3
GND
Parameter
Output voltage
(VIN = 14V, I OUT = 2A, Tj = 25C unless otherwise specified)
Ratings
Symbol
min
typ
max
4.80
5.00
Unit
Conditions
5.20
Line regulation
VO LINE
100
mV
VIN = 8 to 18V
Load regulation
VO LOAD
50
mV
IO = 0.5 to 3A
VO
Efficiency *1
Oscillation frequency
82
f OSC
Iq

current
IS
Soft *3
start
terminal
Low level voltage
VSSL
Source current when low
I SSL
Discharge resistance
RDIS
50
60
70
kHz
10
mA
3.1
15
25
200
IO = 0A
*2
0.2
35
VSSL = 0.2V
VIN = 0V
Notes:
*1. Efficiency is calculated by the following equation:
VO I O
=
100 (%)
VIN I IN
*2. A dropping-type overcurrent protection circuit is built in the IC.
*3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the
soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open
when not using it since it is already pulled up in the IC.
GND
C1: 1000F
C2: 1000F
L 1: 250H
D1: RK46 (Sanken)
a: Internal power supply

b: Thermal protection
c: Reference oscillator
d: Reset
e: Latch & driver
f : Comparator
g: Overcurrent protection
h: Error amplifier
i : Reference voltage
Cautions:
(1) A high-ripple current flows through C1 and C2. Use high-ripple
type 1000F or higher capacitors with low internal resistance.
Refer to the respective data books for more information on
reliability and electrical characteristics of the capacitor.
(2) C3 is a capacitor used for soft start.
(3) L1 should be a choke coil with a low core loss for switching
power supplies.
(4) Use a Schottky barrier diode for D1 and make sure that the
reverse voltage applied to the 2nd terminal (SWOUT terminal) is
within the maximum ratings (1V). If you use a fast-recovery
diode, the recovery voltage and the ON forward voltage may
cause a reversed-bias voltage exceeding the maximum ratings
to be applied to the 2nd terminal (SWOUT terminal). Applying a
reversed-bias voltage exceeding the maximum rating to the
2nd terminal (SWOUT terminal) may damage the IC.
(5) The 4th terminal (VS) is an output voltage detection terminal.
Since this terminal has a high impedance, connect it to the
positive (+) terminal of C2 via the shortest possible route.
(6) Leave the 5th terminal (soft start terminal) open when not
using it. It is pulled up internally.
(7) To ensure optimum operating environment, connect the highfrequency current line with minimum wiring length.
SI-3201S
5
SS
C3
22
SI-3201S
5
SS
SI-3201S
5
SS
C3
Switching Type Regulator ICs SI-3201S
Load Regulation
5.10
5.00
Io = 0A
= 1A
= 2A
= 3A
4.95
4.90
5.10
5.05
5.00
VIN =18V
= 10V
= 7V
4.95
4.90
4.85
4.85
0
10
15
20
25
30
35
0.5
80
5
(%)
Efficiency
1.0
1.5
2.0
2.5
V IN = 18V
= 10V
= 7V
60
50
40
1.5
2.0
2.5
3.0
10
Overcurrent Protection Temperature Characteristics

6
5
VIN =18V
= 10V
= 7V
4
3
2
TC = +100, 25, --20C
3
2
1
0
0
1.0
0.5
3.0
90
Efficiency Curve
70
Io = 0A
= 1A
= 2A
= 3A
5.05
5.15
Line Regulation
1.0
2.0
3.0
4.0
5.0
1.0
2.0
3.0
4.0
5.0
25
With silicone grease

Heatsink: aluminum
20
15
10
0
40
40
80
120
160
23
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04
Features
1.0 0.3
Built-in diagnostic function to detect short and open circuiting of loads and
output status signals
Low saturation PNP transistor use
Allows direct driving using LS-TTL and C-MOS logic levels
Built-in overcurrent protection circuits
Built-in protection against reverse connection of power supply
Tj = 150C guaranteed
Surface-mount full-mold package
0.89 0.15 2.54 0.25
0.25
+0.15
0.75 0.05
+0.15
a
b
Pin 1
Power supply voltage
VB
13 to +40
Drive terminal applied voltage
VD
0.3 to VB
Input terminal voltage
VIN
0.3 to +7.0
DIAG output applied voltage
VDIAG
0.3 to +7.0
DIAG output source current
IDIAG
mA
Voltage across power supply

and drive terminal
VBD
VB 0.4
Output current
IO
1.5
Power dissipation
PD
2.6
Tj
40 to +150
TOP
40 to +100
Storage temperature
Tstg
40 to +150
19.56 0.2
Conditions
3.6 0.2
Unit
1.4 0.2
Ratings
20.0max
(Ta=25C)
Symbol
4.0max
Parameter
6.8max
6.3 0.2
8.0 0.5
0 to 0.15
9.8 0.3
3.0 0.2
16
0.3 0.05
SMD-16A
a: Part No.
b: Lot No.

Without heatsink, all circuits operating
The MIC is bound by the dotted lines.
9,12,16
IN1
Drive
CONT.
11k typ.
DIAG1
O.C.P
DIAG DET.
VB 2
Pre. Reg.
(VBopr =14V, Ta=25C unless otherwise specified)
1,15
14
T.S.D
Out1 2
D1 1
Ratings
Parameter
Symbol
Operating power supply voltage
VBopr
min
typ
max
16
6.0
Unit
Conditions
IN2
DIAG2
Iq
Threshold input voltage
VINth
5
0.8
I IN
Hi output
12
mA
3.0
1.0
mA
Input current
A
V
Output terminal sink current
IO (off)
2.0
mA
Saturation voltage of DIAG output
VDL
0.3
IDIAG = 3mA
100
VDIAG = 5V
30
IDGH
Open load detection resistor
Ropen
IS
1.6

current
VIN = 0V
IO 1.0A, VBopr = 6 to 16V
VO = 0V, VIN = 0V
VO = VBopr 1.9V
TON
30
IO = 1A
TOFF
15
30
IO = 1A
TPLH
10
30
IO = 1A
TPHL
15
30
IO = 1A
Output transfer time
DIAG output transfer time
Out2
*2
D2 1
*2
VIN = 5V
0.5
Leak current of DIAG output
8,10
11
100
O.C.P
DIAG DET.
4,5,13
VCE (sat)
I IN
Drive
CONT.
Lo output
Saturation voltage of output

transistor
Lo output
11k typ.
GND
[Abbreviations]
Drive: Drive circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator
DIAG.DET.: Diagnostic circuit

O.C.P.: Overcurrent protection
T.S.D.: Thermal protection
*1. The base terminal (D terminal) is connected to the output

transistor base. It is also connected to the control monolithic
IC. Do not, therefore, apply an external voltage in operation.
*2. SDH04 have two or three terminals of the same function (VB,
Out1, Out 2, GND). The terminals of the same function must be
shorted at a pattern near the product.

VB
PZ
Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute
(all terminals except, VB and GND, are open).
D1
Out
SDH04
IN
Diagnostic Function
VCC
DIAG
GND
Load
5.1k
VB
3.0V
GND
GND
VIN
0.8V
Truth table
VIN
VO
VOUT
SHORT
Is
OPEN OPEN
OVER
VOLTAGE
GND
TSD
Note 1: A pull-down resistor (11 k typ.) is connected to the IN terminal.

VOUT turns "L" when a high impedance is connected to the IN terminal in
series.
IO
GND VDIAG
Normal
24
Shorted load
Open load
Overvoltage
Overheat
ERROR SIGNAL for CPU
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04
Quiescent Circuit Current (dual circuit)
Circuit Current (single circuit)
VIN = 0V
20
50
20
IB (mA)
30
125C
20
VIN = 0V
10
VO shorted
VO open
10
Ta =
40C
60
25C
40
125C
20
VIN = 0V
30
40
0
0
46
10
20
VB (V)
Saturation Voltage of Output Transistor
30
40
0
0
46
20
30
40
46
VB (V)
Overcurrent Protection Characteristics (Ta=40C)

20
20
Ta =
125C
VB = 16V
VB = 6V
10
VB (V)
1.5
VB =
18V
15
VB =
18V
15
25C
VO (V)
1.0
VO (V)
VCE (sat) (V)
80
25C
10
0
0
VIN = 5V
100
Ta =
40C
40
IB (mA)
Iq (mA)
Ta = 40C
25C
125C
Circuit Current (dual circuit)

VIN = 5V
14V
10
14V
10
0.5
40C
6V
6V
0
IO (A)
IO (A)
Threshold Characteristics of Input Voltage

Ta = 125C
Input Terminal Source Current
VB = 14V IO = 1A
15
20
IO (A)
25C
VB = 14V
1.0
40C
VB =
18V
0.8
15
IIN (mA)
VO (V)
VO (V)
10
14V
10
0.6
Ta = 125C
25C
40C
0.4
5
5
0.2
6V
IO (A)
VIN (V)
Input Terminal Sink Current
10
VIN (V)
Saturation Voltage of DIAG Output
VB = 14V VIN= 0V
1.0
0.3
VB = 14V
IDIAG = 3mA
VDL (V)
IINL (A)
0.2
0.5
0.1
0
50
50
Ta (C)
100
150
0
50
50
100
150
Ta (C)
25
High-side Power Switch ICs [With Diagnostic Function] SI-5151S
TO220 equivalent full-mold package not require insulation mica
4.2 0.2
3.2 0.2
10 0.2
16.9 0.3
4 0.2
7.9 0.2
2.8 0.2
20 max
Features
2.6 0.1
Symbol
0.94 0.15
(Ta=25C)
Ratings
Unit
VB
40
VIN
0.3 to VB
DIAG terminal voltage
VDIAG
R-end
Conditions
+0.2
+0.2
0.45 0.1
0.85 0.1
P1.7 0.1 4 = 6.8
VCE
40
IO
1.8
PD1
18
With infinite heatsink (Tc = 25C)
PD2
1.5

(Tc = 25C)
Tj
40 to +125
TOP
40 to +100
Storage temperature
Tstg
40 to +125
Collector-emitter voltage
Output current
Power Dissipation
3.6 0.5
Parameter
2.9 0.3
+0.2
4 0.6
1. GND
2. VIN
3. VO
4. DIAG
5. VB
a: Part No.
b: Lot No.
(Forming No. 1123)

VB
5
Symbol
VBopr
min
VCE (sat)
Output leak current
IO, leak
typ
6.0
Iq

transistor
VO
(Ta=25C unless otherwise specified)
Ratings
max
Unit
SI-5151S
Conditions
VIN 2
30
12
mA
0.5
1.0
mA
V
VBopr = 6 to 16V
VBopr = 6 to 16V
LS-TTL
or
CMOS
VCC
DIAG
4
VBopr = 14V, VIN = 0V
PZ
5.1k
Load
Parameter

VCEO = 16V
Output ON
VIH
2.0
VB
Output OFF
VIL
0.3
0.8
Output ON
I IH
mA
VIN = 5V
VIN = 0V
GND
Truth table
VIN
VO
Input voltage
Input current
Output OFF
I IL
0.1
mA

current
IS
1.9

temperature
TTSD
125
Ropen
VBopr = 14V, VO = VBopr 1.5V
Diagnostic Function
C
145
30
VBopr = 6 to 16V
TON
30
VBopr = 14V, IO = 1A
TOFF
15
30

6
VCC = 6V
VDL
0.3
VCC = 6V, IDD = 2mA
TPLH
30
TPHL
30
VDH
4.5
DIAG output voltage

Minimum load inductance
Normal
Shorted load
Overheat
Normal
VIN
VO
DIAG
mH
VO
VIN
DIAG
L
L
L
H
H
H
L
H
H
Open load
H
H
H
L
L
L
Shorted load
H
L
L
L
L
L
Overheat
H
L
L
DIAG output will be undetermined when a voltage
exceeding 25V is applied to VB terminal.
Mode
Note:
* The rule of protection against reverse connection of power supply is VB = 13V, one minute
26
Open load
Normal
Circuit Current
10

1.0
40
Ta = --40C
30
25C
--40C
20
VCE (sat) (V)
95C
IB (mA)
Iq (mA)
Ta = 25C
Ta = 95C
V B=
6 to 16V
95C
0.5
--40C
10
25C
0
0
10
20
30
40
0
0
10
20
VB (V)
50
14
14
VB =
14V
12
10
VO (V)
VO (V)
0
0
IO (A)
IO (A)
Input Current (Output ON)
20
Input Current (Output OFF)

2
1.0
15
IO (A)

Ta =
95C
VB =
14V
12
10
10
16
14
VB =
14V
16
12
IO (A)
16
VO (V)
40
VB (V)
Overcurrent Protection Characteristics (Ta= 40C)
VIN = 0V
VB = 14V
VIN = 5V
VB = 14V
25C 40C
10
IIL (A)
VB = 16V
I O = 1A
IIH (mA)
VO (V)
30
0.5
0
40
0
0
2.2
50
VIN (V)
Ta (C)
50
100
Ta (C)
16
VB = 14V
Vo
14
0.1
12
10
DIAG (V)
VO (V)
VDG (sat) (V)
0
40
0.2
8
6
0
40
100
DIAG
VB = 14V
IO = 10mA
4
3
0
0
50
Ta (C)
100
50
100
150
Ta (C)
27
4.2 0.2
3.2 0.2
10 0.2
16.9 0.3
4 0.2
7.9 0.2
2.8 0.2
20 max
Features
2.6 0.1
a
2.9 0.3
+0.2
0.94 0.15
Parameter
R-end
(Ta = 25C)
Symbol
Ratings
Unit
VB
40
VIN
0.3 to VB
VDIAG
VCE
40
Conditions
+0.2
+0.2
0.45 0.1
0.85 0.1
Output current
P1.7 0.1 4 = 6.8
4 0.6
1. GND
2. VIN
3. VO
4. DIAG
5. VB
IO
1.8
PD1
22
With infinite heatsink (Tc=25C)
PD2
1.8
Tj
40 to +150
TOP
40 to +100
Storage temperature
Tstg
40 to +150
3.6 0.5
a: Part No.
b: Lot No.
(Forming No. 1123)
Power Dissipation

VB
5
VO
SI-5152S
Ratings
Parameter
Symbol
VBopr
min
6.0
Iq

transistor
VCE (sat)
Output leak current
IO, leak
typ
max
Unit
30
12
mA
0.5
1.0
mA
Conditions
VIN 2
VCC
DIAG
4
PZ
LS-TTL
or
CMOS
5.1k
Load

Output ON
VIH
2.0
VB
VBopr = 6 to 16V
Output OFF
VIL
0.3
0.8
VBopr = 6 to 16V
Output ON
I IH
mA
VIN = 5V
VIN = 0V
GND
Truth table
VO
VCEO = 16V, VIN = 0V
VIN
Input voltage
Input current
Output OFF
I IL
0.1
mA

current
IS
1.9

temperature
TTSD
150
VBopr 6V
VBopr = 6 to 16V
Normal
Ropen
30
TON
30
TOFF
15
30
IDIAG
100
VCC = 6V, VBopr = 6 to 16V
VDL
0.3
VCC = 6V, VBopr = 6 to 16V, IDO = 2mA
TPLH
30

DIAG output leak current
TPHL
Diagnostic Function
30
1
mH
Open load
Overheat
Normal
VO
DIAG
Mode
Normal
Note:
Shorted load
VIN
Open load
Shorted load
Overheat
VIN
L
H
L
H
L
H
L
H
VO
L
H
H
H
L
L
L
L
DIAG
L
H
H
H
L
L
L
L

28
Circuit Current
10

1.0
40
Ta = 40C
30
40C
95C
25C
20
VCE (sat) (V)
IB (mA)
Iq (mA)
Ta = 25C
Ta = 95C
VB =
6 to 16V
95C
0.5
40C
10
25C
0
0
10
20
30
40
0
0
10
20
VB (V)
Overcurrent Protection Characteristics (Ta = 40C)
16
16
14
14
VB =
14V
12
VO (V)
VO (V)
10
0
0
0
0
IO (A)

2
1.0
15
IO (A)
20
Ta =
95C
IO (A)
VB =
14V
12
10
VB =
14V
10
VO (V)
50
IO (A)
14
VIN = 0V
VB = 14V
VIN = 5V
VB = 14V
25C 40C
10
IIL (A)
VB = 16V
IO = 1A
IIH (mA)
VO (V)
40
VB (V)
16
12
30
0.5
0
0
2.2
VIN (V)
0
40
50
Ta (C)
100
0
40
50
100
Ta (C)

0.2
VDL (V)
VB = 14V
0.1
0
40
50
100
Ta (C)
29
High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S
Built-in Zener diode
4.2 0.2
3.2 0.2
10 0.2
16.9 0.3
4 0.2
7.9 0.2
2.8 0.2
2.6 0.1
a
2.9 0.3
+0.2
20 max
Features
0.94 0.15
R-end
Parameter
(Ta=25C)
Symbol
Ratings
Unit
VB
13 to +40
VIN
0.3 to VB
VDIAG
VCE
VB VZ
IO
2.04
PD1
22
PD2
1.8
Tj
40 to +150
TOP
40 to +100
Storage temperature
Tstg
40 to +150
Output current
+0.2
+0.2
0.45 0.1
0.85 0.1
Conditions
P1.7 0.1 4 = 6.8
4 0.6
1. GND
2. VIN
3. VO
4. DIAG
5. VB
Refer to "Surge clamp voltage"

in Electrical Characteristics
3.6 0.5
a: Part No.
b: Lot No.
(Forming No. 1123)
Power Dissipation

VB
5
VO
SI-5153S
VIN 2
Ratings
Parameter
Symbol
VBopr
min
6.0
Iq
typ
max
Unit
30
12
mA
V

transistor
VCE (sat)
0.47
Output leak current
IO, leak
mA
Conditions
LS-TTL
or
CMOS
5.1k

Output ON
VIH
2.0
VB
VBopr = 6 to 16V
Output OFF
VIL
0.3
0.8
VBopr = 6 to 16V
Output ON
I IH
mA
VIN = 5V
Output OFF
I IL
0.1
mA
VIN = 0V

current
IS
2.05

temperature
TTSD
150
VBopr 6V
30
VBopr = 6 to 16V
GND
Truth table
VIN
VO
Input voltage
1
VCC
DIAG
Load
Input current
Diagnostic Function
Normal
Open load
Shorted load
Overheat
Normal
VIN
Ropen
TON
30
TOFF
15
30


VDH
4.5
VO
DIAG
DIAG output voltage

VDL
0.3
TPLH
30
TPHL
30

Surge clamp voltage
*1
VZ
28
mH
34
40
IC = 5mA
Note:
*1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse).
* The rule of protection against reverse connection of power supply is VB = 13V, one minute.
* This driver is exclusively used for ON/OFF control.
30
VO
VIN
DIAG
L
L
L
H
H
H
L
H
H
Open load
H
H
H
L
L
L
Shorted load
H
L
L
L
L
L
Overheat
H
L
L
Mode
Normal
Circuit Current
10

2
50
40
Ta = 40C
25C
VCE (sat) (V)
IB (mA)
Iq (mA)
Ta =
40C
30
25C
20
150C
Ta =
125C
VB = 6 to 16V
150C
25C
10
0
0
10
20
0
0
40
30
40C
10
20
30
40
VB (V)
VB (V)
IO (A)
Overcurrent Protection Characteristics (Ta =25C)
20
20
20
VB =
18V
VB =
18V
VB =
18V
15
15
15
10
14V
10
8V
IO (A)
0.8
0.6
I IL (A)
I IH (mA)
10
VB = 14V
VIN = 0V
VB = 14V
VIN = 5V
VB = 16V
IO = 1A
1.0
Ta = 150C 25C 40C
IO (A)
20
IO (A)
Threshold Characteristics of Input Voltage
15
10
8V
8V
5
VO (V)
VO (V)
VO (V)
VO (V)
14V
14V
0.4
5
0.2
0
50
VIN (th) (V)
50
100
0
50
150
Output Terminal Leak Current
VB = 14V
VDIAG = 5V
IO = 10mA
15
0.3
VO (V)
VDL (V)
IO leak (mA)
0.4
0.2
Ta (C)
100
150
0
50
VO
10
VDIAG
0.1
50
150
20
VB = 14V
IDIAG = 2mA
100
0.5
VB = 14V
50
Ta (C)
0
50
Ta (C)
0
0
50
Ta (C)
100
150
50
100
150
200
Ta (C)
31
Built-in Zener diode
4.2 0.2
3.2 0.2
10 0.2
16.9 0.3
4 0.2
7.9 0.2
2.8 0.2
20 max
Features
2.6 0.1
a
2.9 0.3
+0.2
0.94 0.15
R-end

Symbol
Ratings
Unit
VB
13 to +40
VIN
0.3 to VB
VDIAG
VCE
VB VZ
IO
2.5
PD1
22
With infinite heatsink (Tc =25C)

Output current
+0.2
+0.2
Conditions
0.45 0.1
0.85 0.1
P1.7 0.1 4 = 6.8
4 0.6
1. GND
2. VIN
3. VO
4. DIAG
5. VB
Refer to "Surge clamp voltage" in

3.6 0.5
Parameter
(Ta=25C)
a: Part No.
b: Lot No.
(Forming No. 1123)
Power Dissipation
PD2
1.8
Tj
40 to +150
TOP
40 to +100
Storage temperature
Tstg
40 to +150

VB
5
VO
SI-5154S

VIN 2
Ratings
Symbol
VBopr
min
6.0
Iq

transistor
VCE (sat)
Output leak current
IO, leak
Output ON
VIH
typ
2.0
max
Unit
Conditions
30
12
mA
0.3
0.72
mA
VB
LS-TTL
or
CMOS
0.8
VBopr = 6 to 16V
GND
VBopr = 6 to 16V
Output OFF
VIL
Output ON
I IH
mA
VIN = 5V
Output OFF
I IL
0.1
mA
VIN = 0V

current
IS
2.6

temperature
TTSD
150
VBopr 6V
30
VBopr = 6 to 16V
5.1k
Truth table
VIN
VO
Input voltage
0.3
VCC
DIAG
Load
Parameter
Input current
Ropen
TON
30
TOFF
15
30

6
VDL
0.3
TPLH
30
TPHL
30
VDH
4.5
DIAG output voltage

Surge clamp voltage
*1
VZ
28
mH
34
40
Normal
Open load
IC = 5mA
Shorted load
Overheat
VIN
VO
DIAG
Mode
Normal
Note:
*1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse).
* The rule of protection against reverse connection of power supply is VB = 13V, one minute.
* This driver is exclusively used for ON/OFF control.
32
Diagnostic Function
Open load
Shorted load
Overheat
VIN
L
H
L
H
L
H
L
H
VO
L
H
H
H
L
L
L
L
DIAG
L
H
H
H
L
L
L
L

Normal
Circuit Current
Ta= 40C
25C
150C
40
Ta =
40C
30
25C
20
VCE (sat) (V)
50
IB (mA)
Iq (mA)
10
150C
Ta =
125C
25C
VB = 6 to 16V
10
0
0
10
20
30
40C
0
0
40
10
20
30
40
VB (V)
VB (V)
IO (A)
20
20
20
VB =
18V
16
16
8V
4
8V
6V
IO (A)
6V
IO (A)
I IH (mA)
10
VB = 14V
VIN = 0V
0.8
0.6
I IL (A)
15
VB = 14V
VIN = 5V
Ta = 125C 25C 40C
1.0
VB = 16V
IO = 1A
IO (A)
20
VO (V)
12
8V
6V
14V
14V
12
VO (V)
14V
12
VO (V)
VO (V)
16
VB =
18V
VB =
18V
0.4
5
0.2
0
50
VIN (th) (V)
50
100
0
50
150
0.3
0.2
Ta (C)
150
0
50
VO
10
VDIAG
0.1
100
VB = 14V
VDIAG = 5V
IO = 10mA
15
VO (V)
VDL (V)
IO leak (mA)
0.4
50
150
20
VB = 14V
IDIAG = 2mA
100
0.5
VB = 14V
50
Ta (C)
0
50
Ta (C)
0
0
50
Ta (C)
100
150
50
100
150
200
Ta (C)
33
4.2 0.2
3.2 0.2
10 0.2
16.9 0.3
4 0.2
7.9 0.2
2.8 0.2
20 max
Features
2.6 0.1
a
2.9 0.3
+0.2
0.94 0.15
Parameter
R-end
(Ta=25C)
Symbol
Ratings
Unit
VB
13 to +40
VIN
0.3 to VB
VDIAG
VCE
40
Conditions
+0.2
+0.2
0.45 0.1
0.85 0.1
Output current
P1.7 0.1 4 = 6.8
4 0.6
1. GND
2. VIN
3. VO
4. DIAG
5. VB
IO
2.5
PD1
22
PD2
1.8
Tj
40 to +150
TOP
40 to +100
Storage temperature
Tstg
40 to +150
3.6 0.5
a: Part No.
b: Lot No.
(Forming No. 1123)
Power dissipation

VB
5
VO
SI-5155S
Ratings
Parameter
Symbol
VBopr
min
6.0
Iq

transistor
VCE (sat)
Output leak current
IO, leak
typ
max
Unit
30
12
mA
0.3
0.72
mA
VIN 2
Conditions
LS-TTL
or
CMOS
VCC
DIAG
4
PZ
5.1k
Load

Output ON
VIH
2.0
VB
VBopr = 6 to 16V
Output OFF
VIL
0.3
0.8
VBopr = 6 to 16V
Output ON
I IH
mA
VIN = 5V
Output OFF
I IL
0.1
mA
VIN = 0V
IS
2.6
TTSD
150
VBopr 6V
VBopr = 6 to 16V
GND
Truth table
VIN
VO
Input voltage
Input current
current
temperature
Ropen
30
TON
30
TOFF
15
30

VDH
4.5
Diagnostic Function
Normal
Open load
Shorted load
Overheat
VO
L
H
H
H
L
L
L
L
DIAG
Normal
VIN
VO
DIAG output voltage

VDL
0.3
TPLH
30

TPHL
30
1
mH
Note:
DIAG
Mode
Normal
Open load
Shorted load
Overheat
VIN
L
H
L
H
L
H
L
H
L
H
H
H
L
L
L
L

34
Circuit Current
Ta= 40C
25C
150C
40
Ta =
40C
30
25C
20
VCE (sat) (V)
50
IB (mA)
Iq (mA)
10
150C
Ta =
125C
25C
VB = 6 to 16V
10
0
0
10
20
0
0
40
30
40C
10
20
30
40
VB (V)
VB (V)
IO (A)
Overcurrent Protection Characteristics (Ta =125C)
20
20
20
VB =
18V
16
16
8V
4
8V
6V
6V
IO (A)
IO (A)
10
0.8
0.6
I IL (A)
I IH (mA)
VB = 16V
IO = 1A
VB = 14V
VIN = 0V
VB = 14V
VIN = 5V
15
1.0
Ta = 125C 25C 40C
IO (A)
20
VO (V)
12
8V
6V
14V
14V
12
VO (V)
14V
12
VO (V)
VO (V)
16
VB =
18V
VB =
18V
0.4
5
0.2
0
50
VIN (th) (V)
50
100
0
50
150
0.3
0.2
Ta (C)
150
0
50
VO
10
VDIAG
0.1
100
VB = 14V
VDIAG = 5V
IO = 10mA
15
VO (V)
VDL (V)
IO leak (mA)
0.4
50
150
20
VB = 14V
IDIAG = 2mA
100
0.5
VB = 14V
50
Ta (C)
0
50
Ta (C)
0
0
50
Ta (C)
100
150
50
100
150
200
Ta (C)
35
High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

31 0.2
Ellipse 3.2 0.15 3.8
4.8 0.2
24.4 0.2
1.7 0.1
16 0.2
9.9 0.2
3.2 0.15
12.9 0.2
Low saturation PNP transistor use (VCE (sat) 0.2V)
Built-in Zener diode in transistor eliminates the need of (or simplifies) external
surge absorption circuit
Built-in independent overcurrent and thermal protection circuit in each circuit
a
b
2.45 0.2
6.4 0.5
Features
+0.2
+0.2
+0.2
1.15 0.1
0.55 0.1
0.65 0.1
14 P2.03 0.1 = (28.42)

Parameter
(Ta=25C)
Symbol
Ratings
Unit
VB
13 to +40
Drive terminal applied voltage
VD
0.3 to VB
VIN
0.3 to +7.0
VDIAG
0.3 to +7.0
IDIAG
mA

and output terminal
VBO
VB 34

and drive terminal
VBD
0.4
Conditions
31.3 0.2
a: Part No.
b: Lot No.
1 23
Output current
IO
1.5
Output reverse current
IO
1.8
15

VB
Electrostatic resistance
250
ES/A
C = 200pF, R = 0
Stand-alone without heatsink,
all circuits operating
Power Dissipation
PD
4.8
Tj
40 to +150
TOP
40 to +115
Storage temperature
Tstg
50 to +150
Symbol
VBopr
Quiescent circuit current (per circuit)

Circuit current (per circuit)
MIC
GND
Unit
16
Iq
0.8
1.6
mA
Lo output
IB
19.3
mA
Tj = 25C
VINth
0.8
VIN
3.7
Lo output
VIN
3.0
VB
VCC
V
1.5
I IN
1.0
Input current
Lo output
I IN
VCE (sat)
mA
VCE (sat)
1.0
IO (off)
2.5
Surge clamp voltage
VBO
VIN = 5V
mA
Tj = 25C, VCEO = 14V
34
39
Tj = 25C, IC = 10mA
34
40
IC = 5mA
IDGH = 2mA, VBopr = 6 to 16V
VDL
0.4
IDGH
100
Ropen
5.5

current
IS
1.6
VO = VBopr 1.5V
VBopr 6V
30
IO = 1A
100
IO = 1A
TPLH
30
IO = 1A
IO = 1A
Maximum ON duty
100
Lo
1.0
D(ON)
mH
60
SLA2501M
FLT2 8
Diagnostic Function
TON
TPHL
FLT1
IN2
VCC = 7V
TOFF
3
9 14
D1 D2 D3
FLT3 13
GND1 GND2 OUT1 OUT2 OUT3
6
11 2
10
15
28
1
VB
IN1
12 IN3
29
TTSD
VIN = 0V
0.2
36
100

transistor

temperature
e: Overcurrent protection circuit

f: Diagnostic circuit
g: Thermal protection circuit
Input voltage
Hi output
FLT
a: Pre-regulator
b: Overvoltage protection circuit
c: Control circuit
d: Driver circuit
Conditions
max
Hi output
OUT
D
typ
6.0
e
g
(VBopr =14V, Tj= 40 to +150C unless otherwise specified)
min
d
c
Ratings
Parameter
VIN
Note:
* The Zener diode has an energy capability of 200 mJ (single pulse).
* A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.
Normal
VIN
VO
VDIAG
Open load
Shorted load
Overheat
Normal
Quiescent Circuit Current (single circuit)
40
1.0
VIN = 5V
VIN = 0V
V IN = 5V
V B = 6 to 16V
Ta = 40C
Ta = 25C
Ta =125C
VCE (sat) (V)
Ta =150C
30
Ta = 40C
Ta = 25C
Ta = 125C
IB (mA)
Iq (mA)
20
Ta = 125C
Ta = 40C
0.5
Ta = 25 C
10
0
0
10
20
30
40
10
20
30
40
3.5
VB (V)
VB (V)
IO (A)

20
20
20
0
1
VO (V)
10
10
I OUT = 1A

20
V B = 14V
V IN = 0V
V IN = 0V
IIL (A)
25C 40C
0.5
0
--50
50
100
10
0
50
125
Ta (C)
VIN (V)
Output Reverse Current
V B = 14V
VIN = 5V
I FLT = 3 (mA)
50
100
125
Ta (C)
Thermal Protection
1.4
0.3
IO (A)
VB = 14V
0
1
1.0
10
IIH (mA)
VO (V)
Ta = 125C
IO (A)
Threshold Input Voltage

VB = 16V
10
IO (A)
20
VB = 14V
V B = 14V
VO (V)
VO (V)
VB = 14V
20
10
V B = 16V IO = 10mA
1.2
VO
1.0
0.1
Ta = 25C
0.6
Ta = 125C
10
VFLT (V)
Ta = --40C
0.8
VO (V)
VF (V)
VDL (V)
0.2
V FLT
5
0.4
0.2
0
50
50
Ta (C)
100
125
IF (A)
0
0
60
100
160
180
Ta (C)
37
Features
Low saturation PNP transistor use (VCE (sat) 0.5V)
Built-in overcurrent protection circuits
310.2
Ellipse 3.2 0.15 3.8
4.8 0.2
24.4 0.2
1.7 0.1
16 0.2
9.9 0.2
12.9 0.2
3.2 0.15
2.45 0.2
6.4 0.5

Parameter
+0.2
(Ta=25C)
Symbol
Ratings
Unit
VB
13 to +40
VIN
0.3 to +7.0
VDIAG
0.3 to +7.0
IDIAG
mA
Output current
IO
1.2
Power Dissipation
PD
4.8
Tj
40 to +150
TOP
40 to +100
Storage temperature
Tstg
50 to +150
+0.2
1.15 0.1
+0.2
0.55 0.1
0.65 0.1
14 P2.03 0.1 = (28.42)
Conditions
31.3 0.2
a: Part No.
b: Lot No.
1 23
15
Stand-alone operation without

heatsink; all circuits operating

SLA2502M
The MIC is bound by the dotted lines.
VB
Pre. Reg.
NI1
(VBopr =14V, Ta=25C unless otherwise specified)
DIAG1
Drive
CONT.
11k typ.
O.C.P
DIAG DET
Parameter
Symbol
VBopr
min
typ
max
16
6.0
Unit
Conditions
NI2
Iq
VINth
Hi output
I IN
Lo output
I IN
5
0.8
12
mA
3.0
1.0
mA
VIN = 5V
100
VIN = 0V
Input current
0
VIN = 0V
Drive
CONT.
11k typ.
O.C.P
DIAG DET
GND1
10
Drive
CONT.
11k typ.
11
O.C.P
DIAG DET
VCE (sat)

0.5
IO (off)
2.0
mA
VDL
0.3

VO = 0V, VIN = 0V
NI4
100
Ropen
30

current
IS
1.6
VO = VBopr 1.9V
TON
30
IO = 1A
15
30
IO = 1A
TPLH
10
30
IO = 1A
TPHL
15
30
IO = 1A
Out3
Drive
CONT.
11k typ.
13
O.C.P
15
12
Out4
VDIAG = 5V
TOFF
14
DIAG DET
I DIAG = 3mA
GND4
IDGH
9
T.S.D
DIAG4
Out2
Pre. Reg.
NI3
DIAG3

transistor
Out1
T.S.D
DIAG2
Quiescent circuit current (per circuit)

Ratings
[Abbreviations]
Drive: Drive circuit
CONT: ON/OFF circuit
Pre.Reg: Pre-regulator
DIAG.DET.: Diagnostic circuit

O.C.P.: Overcurrent protection
T.S.D.: Thermal protection
Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute
(all terminals except VB and GND should be open).
VB
PZ
D1
Out
Diagnostic Function
SLA2502M
IN
VCC
DIAG
5.1k
VB
Load
GND
3.0V
GND
GND
VIN
0.8V
Truth table
VIN
VO
VOUT
SHORT
Is
OPEN OPEN
OVER
VOLTAGE
GND
TSD
Note 1: A pull-down resistor (11k typ.) is connected to the IN

terminal. VOUT turns "L" when a high impedance is
connected to the IN terminal in series.
Note 2: Grounds GND1 and GND2 are not wired internally. They
must be shorted at a pattern near the product.
IO
GND VDIAG
Normal
Shorted load
Open load
Overvoltage
Overheat
ERROR SIGNAL for CPU
38
Circuit Current (4 circuits)
60
(VB = 14V)
1.0
200
Ta =
40C
50
VB
150
Ta =
40C
125C
VCE (sat) (V)
30
IB (mA)
25C
40
IB (mA)
25C
100
125C
20
VIN = 0V
Ta =
25C
125C
0.5
40C
50
10
VIN = 0V
0
0
10
20
30
40
0
0
46
10
20
VB (V)
0
0
46
IO (A)
20
20
VB =
18V
15
125C
25C 40C
I IL (A)
VO (V)
10
VB = 14V
VIN = 0V
Ta =
15
14V
VB (V)
VO (V)
40
30
10
1
5
6V
0
0
0
0
50
VIN = 0V
20
VB = 14V
VB = 14V
IDIAG = 3mA
Ta =
40C
25C
Ta = 40V
25V
125V
Iq (mA)
0.2
VDL (V)
0.3
125C
0.2
150
Quiescent Circuit Current (dual circuit)
0.3
0.5
100
Ta (C)
Input Current (Output Hi)
0.4
VIN (V)
IO (A)
I IH (mA)
0
50
10
0.1
0.1
0
0
VO shorted
VO open
1
0
50
50
100
0
0
150
20
15
25C
0.9
ROPEN (k)
IOLEAK (mA)
46
Ta =
40C
1.0
TSD
VB = 14V
RL = 1.3k
40
Open Load Detection Resistor
1.1
10
30
VB (V)
Output Terminal Leak Current (VO = 0V)
15
VO1 (V)
10
Ta (C)
VIN (V)
125C
0.8
0.7
10
Ta =
125C
25C
5
40C
0.6
0
0.5
0
50
100
Ta (C)
150
200
0
5
10
15
VB (V)
20
25
10
15
20
VB (V)
39
High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003
Features
DMOS 2ch output
Allows ON/OFF using C-MOS logic level
12.2 0.2
+0.1
10.5 0.2
1.0 0.05
16
Fin
thickness
(Ta=25C)
Symbol
Ratings
Unit
8
+0.15
1.27 0.25
VB
35
VIN
0.3 to 7
V
mA
I IN
DG terminal voltage
VDG
0.3 to 7
DG terminal current
I DG
mA
Drain to source voltage
Input terminal current
Conditions
VDS
VB 45
Output current
IO
1.8
Power dissipation
PD
Source to drain Di forward current
IF
0.8
Channel temperature
Tch
150
TOP
40 to +105
Storage temperature
Tstg
40 to +150
0.4 0.05
2.50.2
Parameter
2.0 0.8
+0.2
7.5 0.2
+0.15
0.250.05
Block Diagram (for one channel)

VB
Ta=25C
Thermal
Protect
Bias
Clamp
Input
Logic
IN
Lavel
Shifting
Charge
Pump
Current
Limit
Chopper
DG
Symbol
VB (opr)
min
typ
Unit
max
Open/Short
Sense
Conditions
GND
35
Iq

Output ON resistance
mA
VIN=0V, VOUT=0V
200
IO=1A
300
IO=1A, Ta=80C
VOUT=0V
RDS (ON)
50
100
VIHth
1.4
2.0
3.0
Ta= 40 to +105C
VILth
1.0
1.8
Ta= 40 to +105C
IO, leak
Output leak current

Input threshold Output ON
voltage
Output OFF
Output ON
70
I IH
I IL
Overcurrent protection starting current
IS
12
1.9
7,8
OUT1
15,16
200
Inpup current
Output OFF
OUT
VIN=5V
VB
VIN=0V
(2, 3)
9
VOUT =VO 1.5V
(10,11)
OUT2
5V
SPF5003
DG1
5V
Load
5.5
DG2
Load
Parameter
DG
Logic
(VB=14V, Ta=25C unless otherwise specified)
Ratings
14
Load open detection threshold voltage
*1
TTSD
155
165
3
4.5
70
140
RL=14, VO= 5V
TOFF
35
90
RL=14, VO 10%
20
VDG= 5.5V
VDGL
0.15
0.5
IDG=1.6mA
TPLH
70
140
TPHL
45
120
1.5
I DG
Low level DG output voltage

DG output transfer time
Note:
*1
Vin 2
(7V max)
13
12
GND
RIN
C
P
U
TON
Vopen

DG leak current
Vin 1
(7V max)
VOUT=0V
RIN
IN and RDG are needed to protect CPU and SPF5003 in case of reverse
* Rconnection
of VB terminal.
* Make VB of 1Pin and 9Pin short from the fin to be plated by solder.
Timing Chart
VIN OFF
VIN ON
Normal
VB
1. Transient time is showed Wave Form below.
VO open
Normal
Open load
OCP
Normal
Normal
Shorted load
VIN
VOUT
Recommended Operating Conditions (for one channel)
Wave Form
Internal current limit
min
TSDON
IOUT
Ratings
Parameter
max
Unit
TSDOFF
VIN
DG
5.5
16
VIH
5.5
VIL
0.3
0.9
High inpidance
VOUT 5V
IO
VOUT 10%
VOUT
TON
VDG 90%
VDG 10%
VDG
40
RIN
10
20
RDG
10
20
Mode
TOFF
Normal
TPLH
RDG
Thermal shutdown operating temperature
RDG
ILim
TPHL
Open load
Shorted load
Overheat
VIN
H
L
H
L
H
L
H
L
DG
H
L
H
H
L
L
L
L
VO
H
L
H
H
L (Limiting)
L
L
L
Normal
TSD
Overheat
41
Features
DMOS 2ch output
17.280.2
+0.1
15.580.2
1.0 0.05
13
7.50.2
Symbol
Ratings
Unit
VB
35
VIN
0.3 to 7
I IN
mA
VDG
0.3 to 7
V
mA

DG terminal voltage
2.00.8
(Ta=25C)
DG terminal current
I DG
VDS
VB 45
Output current
IO
2.5
Power dissipation
PD
2.7
IF
0.8
Channel temperature
Tch
150
TOP
40 to +105
Storage temperature
Tstg
40 to +150
Conditions
12
+0.15
1.270.25
0.4 0.05
2.50.2
Parameter
+0.2
10.50.3
24
Fin
thickness
+0.15
0.250.05
a: Part No.
b: Lot No.

VB
Ta=25C
Thermal
Protect
Bias
Clamp
Input
Logic
IN
Lavel
Shifting
Charge
Pump
Current
Limit
Chopper
DG
Parameter
Symbol
VB (opr)
DG
Logic
Ratings
min
typ
max
Unit
Open/Short
Sense
Conditions
GND
35
Iq
mA
150
IO =2A
250
IO =1A, Ta=80C
VOUT =0V
VIN=0V, VOUT=0V
RDS (ON)
50
IO, leak
Output leak current

Output ON
VIH
Output OFF
VIL
Output ON
I IH
3.0
2.0
OUT
Ta= 40 to +105C
Input voltage
Inpup current
IS
1.0
70
2.6
ILim
1.8
10
2,3
Ta= 40 to +105C
VOUT =VO 1.5V
VOUT =0V
OUT1
14,15
VIN =5V
VB
(4,5,6)
13
OUT2
5V
SPF5004
DG1
24
5V
Load
5.5
DG2
(16,17,18)
Load
12
Vopen
155
165
TON
165
TOFF
60
I DG
20
VDGL
0.15
TPLH
70
TPHL
45
(7V max)
GND
RIN
C
P
U

DG leak current
Vin 1
(7V max)
21
RIN
VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin
* Make
to be plated by solder.
VDG =5.5V
IDG =1.6mA
Timing Chart
VIN OFF
VIN ON
Normal
VB
VO open
Normal
Open load
OCP
Normal
Normal
Shorted load
VIN

Unit
min
max
5.5
16
VIH
5.5
VIL
0.3
0.9
1.15
IO
VOUT
Ratings
Parameter
TSDON
IOUT
TSDOFF
DG
High inpidance
Mode
Normal
RIN
10
20
Open load
RDG
10
20
Shorted load
Overheat
42
RDG
TTSD
11
RDG
23 Vin 2
VIN
H
L
H
L
H
L
H
L
DG
H
L
H
H
L
L
L
L
VO
H
L
H
H
L (Limiting)
L
L
L
Normal
TSD
Overheat
43
Features
17.280.2
+0.1
15.580.2
1.0 0.05
24
Fin
thickness
13
7.50.2
Parameter
Symbol
(Ta=25C)
Ratings
Unit
VB
35
VIN
0.3 to 7
I IN
mA
VDG
0.3 to 7
V
mA

DG terminal voltage
DG terminal current
I DG
VDS
VB 45
Output current
IO
1.8
Power dissipation
PD
2.7
IF
0.8
Channel temperature
Tch
150
TOP
40 to +105
Storage temperature
Tstg
40 to +150
2.00.8
Conditions
12
+0.15
1.270.25
0.4 0.05
2.50.2
+0.2
10.50.3
DMOS 3ch output
+0.15
0.250.05
a: Part No.
b: Lot No.

VB
Ta=25C, all circuit operating

Thermal
Protect
Bias
Clamp
Input
Logic
IN
Lavel
Shifting
Charge
Pump
Current
Limit
Chopper
DG
Symbol
min
typ
Unit
Open/Short
Sense
Conditions
max
GND
35
mA
200
IO =1A
350
IO =1A, Ta=80C
VOUT =0V
RDS (ON)
VIN =0V, VOUT =0V
50
100
Output ON
VIHth
1.4
2.0
3.0
Ta= 40 to +105C
Output OFF
VILth
1.0
1.8
Ta= 40 to +105C
Output ON
I IH
IO, leak
Output leak current
70
200
Inpup current
Output OFF
ILim
TTSD
Vopen
155
1.5
OUT1
13 VB
OUT2
5,6
10,11
20,21
OUT3
VIN =5V
SPF5007
5V
4
DG1
VIN =0V
VOUT =VO 1.5V
VOUT =0V
165
RDG
4.5
RIN
70
140
12
1.9
I IL
IS
OUT
DG2
GND1 GND2
2
7
IN1
3
GND3
17
IN2
8
IN3
18
19
DG3
Load
5.5
Iq
Input threshold
voltage
VB (opr)
Load
Load
Parameter
DG
Logic
Ratings
RDG
RDG
RIN
C
P
U
RIN
TON
TOFF
35
I DG
DG leak current
RL=14, VOUT =VB 5V
90
RL=14, VB 10%
20
VDG =5.5V
VDGL
0.15
0.5
TPLH
70
140
TPHL
45
120
IDG =1.6mA
IN and RDG are needed to protect CPU and SPF5007 in case of reverse
* Rconnection
of VB terminal.
* Make VB of 1Pin and 13Pin short from the fin to be plated by solder.
Timing Chart
VIN OFF
VIN ON
Normal
VB
VO open
Normal
Open load
OCP
Normal
Normal
Shorted load
VIN
VOUT

Parameter
max
Unit
TSDOFF
DG
High inpidance
5.5
16
VIH
5.5
VIL
0.3
0.9
Normal
Open load
RIN
10
20
Shorted load
RDG
10
20
Overheat
IO
44
IOUT
Ratings
min

TSDON
Mode
VIN
H
L
H
L
H
L
H
L
DG
H
L
H
H
L
L
L
L
VO
H
L
H
H
L (Limiting)
L
L
L
Normal
TSD
Overheat
45
High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017
Features
Internal current sense resistor
High accuracy current monitor output (sample & hold function)
14.740.2
+0.1
13.040.2
1.0 0.05
11
Ratings
Unit
Power supply voltage 1
VB
0 to 32
Vcc
0.5 to 7.0
VB
0 to 40
Current sensing voltage

Output terminal voltage
(Ta=25C)
Symbol
Vsense+
0.8 to 6
Vsense
Vsense+Io Rsense
VOUT
2 to 32
0.5 to 7.0
VPWM
Conditions
10
+0.15
1.270.25
0.4 0.05
2.50.2
Parameter
2.00.2
7.50.2
10.50.3
20
Fin
thickness
VB terminal, t = 1 min
+0.15
0.250.05
a) Part No.
b) Lot No.
VHold
Output current
IOUT
2.0
Power dissipation
PD
2.4 to 5.0
Storage temperature
Tstg
40 to +150
Channel temperature
Tch
150

Vcc
Depends on surface-mount board pattern
VB
17
clamp
Parameter
Symbol
(VB=14V, Ta=25C unless otherwise specified) One circuit equivalent
typ
TSD
OCP
Operating power supply voltage 1
VB min
VB
Sense+
70k
max
Unit
Conditions
18
CMOS Logic
Hold
VCC
Quiescent circuit current 1
Iqvb

PWM terminal input voltage
14
lamp
Hold terminal input voltage
Current sensing resistance
70
Vcc = 5V, VPWM = 0V, One circuit equivalent
0.2
mA
Vcc = 5V, VPWM = 0V
110
Ttsd
150
Io
0.2
Vcc = 5V, VPWM = 5V, Active H * 3
IOUT = 1A
0.21
IOUT = 1A, Ta = 125C
0.21
IOUT = 1A
0.25
*4
*1
Io = 0A, Vcc = 5V
0.2
0.500
0.512
Io = 0.2A, Vcc = 5V
1.219
1.250
1.281
Io = 0.5A, Vcc = 5V, Ta = 40 to 140C
2.925
3.000
3.075
mA
Io = 1A, Vcc = 5V, VSH = 0V
mA
15
t off
15
tr
100
tf
t shd
Hold time after inputting hold
t shh
S/H settling time
VCC
500
Controlling
microcomputer
CPU
2
3
5
1k
0.01
F
VB
17
Sense+
Hold
Sense
50
650
s
s
VB = 11V, Vcc = 5V, Io = 1.2A,

C1 = 0.033F
80
VB = 11V, Vcc = 5V, Io = 1.2A,

C1 = 0.033F, Ta = 125C
t stt
20
D1
5.1
k
LG
D2
Timing Chart
Ordinary operation
(auto hold)
Thermal
protection
Ordinary operation
(external hold)
VPWM
Icoil
*1
500 to 650
usec
Io = 0.5A, Vcc = 5V,
70
18
* Use a Schottky Di for D2 when the Sense+ terminal

is lower than the abs. max. rated voltage (0.8V)
VS/H
C1 = 0.033F
19
S/H
Vout
Io = 0.5A, Vcc = 5V
OUT
SFP5017
PWM
C1
Io = 1.2A, Vcc = 5V, Ta = 40 to 140C
Note:
* 1: Accuracy warranty range for current monitor output
* 2: Equivalent errors are not included in current monitor output accuracy.
* 3: With built-in pull-down resistance (70k typ)
* 4: Self-excitation and oscillation type
* 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1).
The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
46
LG
C
1.2
Current monitor output delay time
Vcc = 5V
t on
t sh
0.488
ISH
Current monitor output hold time
Vcc = 5V
110
Rsense
Operation circuit for current monitor output
Output fall time
*2
0.14
RDSon
Output rise time
Sense
S/H
70
3.0
20
1.5
IHoldH
VSH
A
V
Is
Current monitor output current
mA
S/H
3.5
Current monitor output voltage
7.2
VHoldL
Hold terminal input current
1.5
IPWMH
VHoldH
16
*1
70k
Sense
R
3.5
VPWML
PWM terminal input current
Minimum operation of OUT terminal.
5.0
Iqvcc
VPWMH
6
10
OUT
19
PWM
Min. operating power supply voltage
Sense
MOS
Ratings
min
Charge
Pump
OSC
SFP5017
*2
*1
500 to 650
usec
VHold
Truth table
VPWM
VOUT
Overcurrent
protection
Ordinary operation
(auto hold)
47
High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018
Features
Internal current sense resistor
High accuracy current monitor output (sample & hold function)
12.20.2
+0.2
Conditions
VB
0 to 32
Vcc
0.5 to 7.0
1.270.25
VB
0 to 40
Vsense+
0.8 to 6
Vsense
Vsense+Io Rsense
VOUT
2 to 32
0.5 to 7.0
VPWM
2.0 0.8
Unit
(Ta=25C)
Ratings
Current sensing voltage
Fin
thickness
8
+0.15
0.4 0.05
2.50.2
Symbol
1.0 0.05
7.50.2

Parameter
+0.1
10.50.2
16
VB terminal, t = 1 min
+0.15
0.250.05
VHold
Output current
IOUT
2.0
Power dissipation
PD
2.0
Storage temperature
Tstg
40 to +150
Channel temperature
Tch
150

Vcc
Depends on surface-mount board pattern
VB
11
clamp
Charge
Pump
OSC
TSD
Sense
MOS
OCP
OUT
14
PWM
3
Parameter
Symbol
70k
Ratings
min
typ
Sense+
max
Unit
13
CMOS Logic
Conditions
Hold
lamp
4
70k
Min. operating power supply voltage

VB min
VB
VCC
Iqvb

PWM terminal input voltage
10
14
Hold terminal input voltage
Current sensing resistance
70
Vcc = 5V, VPWM = 0V
0.2
mA
Vcc = 5V, VPWM = 0V
110
Ttsd
150
Io
0.2
IOUT = 1A
0.21
0.21
IOUT = 1A
0.25
*4
*1
Io = 0A, Vcc = 5V
0.2
0.500
0.512
Io = 0.2A, Vcc = 5V
1.219
1.250
1.281
Io = 0.5A, Vcc = 5V, Ta = 40 to 140C
2.925
3.000
3.075
mA
mA
6
15
t off
15
tr
100
tf
Current monitor output delay time
t shd
Hold time after inputting hold
t shh
S/H settling time
500
3
4
6
1k
0.01
F
11
VB
Sense+
Hold
Sense
50
650
s
s
VB = 11V, Vcc = 5V, Io = 1.2A,

C1 = 0.033F
80
VB = 11V, Vcc = 5V, Io = 1.2A,

C1 = 0.033F, Ta = 125C
t stt
D1
5.1
k
LG
C
5
D2
Timing Chart
Ordinary operation
(auto hold)
Thermal
protection
Ordinary operation
(external hold)
VPWM
Icoil
*1
500 to 650
usec
Io = 0.5A, Vcc = 5V,
70
15
* Use a Schottky Di for D2 when the Sense+ terminal

is lower than the abs. max. rated voltage (0.8V)
VS/H
C1 = 0.033F
14
13
S/H
Vout
Io = 0.5A, Vcc = 5V
OUT
SFP5018
PWM
C1
Io = 1.2A, Vcc = 5V, Ta = 40 to 140C
Note:
* 1: Accuracy warranty range for current monitor output
* 2: Equivalent errors are not included in current monitor output accuracy.
* 3: With built-in pull-down resistance (70k typ)
* 4: Self-excitation and oscillation type
* 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1).
The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.
48
Controlling
microcomputer
CPU
C
1.2
t on
t sh
Vcc = 5V
0.488
ISH
Current monitor output hold time
*3
110
Rsense
Operation circuit for current monitor output
Output fall time
LG
Vcc = 5V
Vcc = 5V, VPWM = 5V, Active H
0.14
RDSon
Output rise time
VCC
70
3.0
*2
1.5
IHoldH
VSH
A
V
Is
Current monitor output current
mA
Sense
S/H
3.5
Current monitor output voltage
7.2
VHoldL
Hold terminal input current
15
S/H
1.5
IPWMH
VHoldH
16
*1
3.5
VPWML
PWM terminal input current
Minimum operation of OUT terminal.
5.0
Iqvcc
VPWMH
Sense
R
*2
*1
500 to 650
usec
VHold
Truth table
VPWM
VOUT
Overcurrent
protection
Ordinary operation
(auto hold)
49
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
Features
DMOS 4ch output
12.2 0.2
(Ta=25C)
VB
40
37
VIN
0.5 to +7.5
Output current
IO
1.8
Power Dissipation
PD
Storage temperature
Tstg
40 to +150
Channel temperature
Tch
150
Output avalanche capability
EAV
50
mJ

Conditions
+0.2
Unit
2.0 0.8
Ratings
8
+0.15
1.270.25
0.4 0.05
2.5 0.2
Symbol
VOUT
1.0 0.05
Fin
thickness
7.5 0.2

Parameter
+0.1
10.5 0.2
16
+0.15
0.25 0.05
Single pulse
Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.

VB
VOUT 1
Gate Protction
Parameter
Symbol
VBopr
Reg. REF
(VB =14V, Ta=25C unless otherwise specified)

OVP
Ratings
min
typ
5.5
max
25
Unit
Conditions
Gate Driver
TSD
OCP
P-GND
VIN 1
Iq
mA
VIN = 0V (all inputs)
Operating circuit current
ICC
12
mA
VIN = 5V (all inputs)
250 k typ
Hi output
VIN
3.5
5.5
Lo output
VIN
0.5
1.5
IO = 1A
Input voltage
VIN 2
VOUT 2
VIN 3
VOUT 3
VOUT 4
Hi output
I IN
50
VIN = 5V
Lo output
I IN
30
VIN = 0V
0.6
VIN 4
0.5
0.7
VB = 5.5V
L-GND
50
55
IO = 1A
Input current
0.4
RDS (ON)
Output clamp voltage
VOUT (clamp)
41
Output leak current
I OH
10
VO = 37V
Forward voltage of output stage

diode
VF
1.6
I F = 0.5A

voltage
VB (ovp)
25
40

temperature
TTSD
151

current
IS
1.1
165
Circuit Example
VCC
TON
12
12
RL = 14, I O = 1A
14

TOFF
RL = 14, I O = 1A
Output rise time
Tr
RL = 14, I O = 1A
Output fall time
Tf
10
RL = 14, I O = 1A
IN2
IN3
L
H
15
5
VB
SPF5002A
IN4
L-GND
13
P-GND
1,9
Use L-GND and P-GND being connected.
Truth table
VIN
VO
L
OUT2 OUT4
IN1
CONTROL
UNIT
10
OUT1 OUT3
Timing Chart
OVP
VB
VOUT
VIN
Normal
50
Overvoltage
Overheat
Overcurrent
* Self-excited frequency is used in the overcurrent protection.
Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A
10
10
Id (mA)
Iq (mA)
Ta = 40C
Ta = 120C
2
Ta = 40C
Ta = 125C
10
20
30
40
Ta = 125C
4
Ta = 25C
Ta = 40C
Ta = 25C
Ta = 25C
Id (mA)
Circuit Current (4 circuits)
10
10
VB (V)
20
30
40
10
20
Output ON Voltage

15
30
40
VB (V)
VB (V)
Forward Voltage of Output Stage Diode

1.5
1.0
VB = 14V
Ta = 125C
Ta = 25C
0.4
0.5
0.2
VO = 14V
IO = 0.1A
0
0.6
I F (A)
VDS (ON) (V)
1.0
VO (V)
10
Ta = 125C
Ta = 25C
Ta = 40C
0.8
Ta = 40C
Ta = 25C
Ta = 125C
Ta = 40C
1
0.5
VIN (th) (V)
1.0
1.5
2.0
IO (A)
0.5
1.0
1.5
VF (V)
Overvoltage Protection Starting Voltage
15
15
IO = 0.1A
VB =14V
10
Ta = 40C
Ta = 25C
Ta = 125C
VO (V)
VO (V)
10
Ta = 120C
Ta = 25C
Ta = 40C
0
1.0
IO (A)
2.0
10
20
30
40
VB (V)
51
Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development)

17.28 0.2
+0.1
15.58 0.2
1.0 0.05
24
Fin
thickness
13
Symbol
Ratings
Unit
VB
40
Output terminal voltage (DC)
VOUT
50
Output terminal voltage (pulse)
VOUT
Output clamping (max 70V)
Output current (DC)
IOUT
2.9
Output current (pulse)
IOUT
Over current protection starting current
V( IN, SEL, B/U)
0.5 to +6.5
Diag output source current
VDIAG
6.5
Diag output voltage
I DIAG
mA
Power Dissipation
2.00.8
(Ta=25C)
PD
2.8
Storage temperature
Tstg
40 to +150
Channel temperature
Tch
150
Conditions
12
+0.15
1.27 0.25
0.4 0.05
2.5 0.2
Parameter
+0.2
+0.15
0.250.05
a : Part No.
b: Lot No.

VB
(7)
Gate Protection
Ref
VOUT1
(4)
Reg
Gate driver
VIN B/U
(17)
TSD
80
EAV
mJ
VOUT
SENSE
VIN SEL
(5)
Set
OUT OCP
Latch Reset
Single pulse
VIN 1
(6)
P-GND1
(1, 2)
OSC
Monitor
Symbol
VB (opr)
(VB =14V, Ta = 25C unless otherwise specified)
Ratings
min
typ
5.5
max
Unit
40
12
mA
VB =14V, VIN=0V
Id
12
15
mA
VB =14V, VIN=5V (all inputs)
Input voltage
(1 to 4, SEL, B/U)
VIN (H)
3.5
6.5
VB =14V, VO=1A
VIN (L)
0.5
1.5
VB =14V
Input current (single circuit)

(1 to 4, SEL, B/U)
I IN (H)
200
VB =14V, VIN=5V
I IN (L)
30
VB =14V, VIN=0V
RDS (ON)
0.18
VB =14V, IO=1A
VOUT (clamp)
VB =14V, IO=1A
70
Output leak current
I OH
50
Forward voltage of output stage diode
VF
1.5
I F =1A
Output moniter threshold voltage
65
P-GND2
(11, 12)
VDIAG2
(10)
VOUT3
(16)
Iq
60
VIN 2
(8)
Conditions
VB =14V, VO=50V
VIN 3
(18)
P-GND3
(13, 14)
VDIAG3
(15)
VOUT4
(21)
VIN 4
(20)
P-GND4
(23, 24)
VDIAG4
(22)
L-GND
(19)
Circuit Example
VB =14V
6.5
VB =14V, VDIAG=6.5V
VDIAG (L)
0.5
VB =14V, IDIAG=5mA
I DH
10
VB =14V, VDIAG=6.5V
18
Vt hM
VDIAG (H)
6.4
DIAG output voltage

DIAG output leak current
VDIAG1
(3)
VOUT2
(9)
Parameter
TTSD
151
IS
3.0
165
VB =14V
VB =14V
12
VB =14V, RL=14, I O=1A
TOFF
VB =14V, RL=14, I O=1A
Output rise time
Tr
VB =14V, RL=14, I O=1A
Output fall time
Tf
10
VB =14V, RL=14, I O=1A
t DON
12
VB =14V, RL=14, I O=1A
t DOFF
VB =14V, RL=14, I O=1A
20
17
5
VB
OUT1
OUT2
16
OUT3
21
OUT4
VIN1
VIN2
VIN3
VIN4
DIAG1
DIAG2
SPF5009
DIAG3
DIAG4
VINB/U
VINSEL
LG
TON
19
PG1
1, 2
PG2
11, 12
PG3
13, 14
3
10
15
22
PG4
23, 24
Timing Chart
Main input signal 1
VIN1
Main input signal 2
VIN2
Backup input signal
VINB/U
Input select signal
VINSEL
VB
Output voltage 1
VOUT1
OCP
OCP
Output current 1
IOUT1
DIAG output 1
VDIAG1
DIAG output 2
VDIAG2
Nomal
52
10.5 0.3
DMOS 4ch output

Built-in over current and thermal protection circuit and diagnostic function to
detect open load
Built-in output status signals (over current, over heat and open load)
7.5 0.2
Features
Output 1
Output 1
Output 1
Overheat Over current Open load
Main mode
Nomal
Output 1
Output 1
Output 1
Overheat Over current Open load
Backup mode
53
Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012
Features
17.28 0.2
+0.1
15.58 0.2
1.0 0.05
24
Fin
thickness
13
(Ta=25C)
Symbol
Ratings
Unit
VB
40
VCC
7.5
Output voltage
VO
40 (DC)
Logic input voltage
VIN
0.5 to +7.5
Output current
IO
Self Limited
VDIAG
0 to VCC
PD
2.8 to 5
Storage temperature
Tstg
40 to +150
Channel temperature
Tch
150
EAV
100
mJ
Diag output voltage

Power Dissipation
Conditions
12
+0.15
1.27 0.25
0.4 0.05
2.5 0.2
Parameter
2 0.2
7.5 0.2
10.5 0.3
Output monitor circuit (DIAG)

DMOS 4ch output
+0.15
0.250.05
*1
a : Part No.
b: Lot No.
*2
VCC1-2
(7)
Diag1
(5)
Single pulse
VB
(19)
* 1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics
* 2. Changes by the patern of mounted substrate
Gate Protection
VOUT1
(3)
Reg
OVP
Gate driver
TSD
VIN1
(4)
OCP
P. GND1
(1, 2)
Ch1
(VB =14V, Ta = 25C unless otherwise specified)
Ratings
Parameter
Symbol
VB (opr)
5.5
40
VCC (opr)
4.5
5.5
min
typ
max
Unit
Conditions
Ch2
VCC3-4
(18)
Iq
mA
VB =14V, VIN=0V
Id
12
mA
VB =14V, VIN=5V
Hi output
VIN
3.5
5.5
VB =14V, VO=1A
Lo output
VIN
0.5
1.5
VB =14V
Input voltage
Hi output
I IN
50
VB =14V, VIN=5V
Lo output
I IN
30
VB =14V, IO 1A
0.3
VB =14V, IO=1A, Ta=125C
0.2
VB =14V, IO=1A, Ta=25C
55
2.8
mA
VB =14V, VCC=5V, VIN=0V,

VO =40V, Ta=25C
900
VB =14V, VCC =5V, VIN=0V,

VO =14V, Ta=25C
1.6
40
Input current
Output leak current
RDS (ON)
VOUT (clamp)
45
50
I OH
Forward voltage of output stage diode
VF
Overvoltage protection starting voltage
VB (ovp)
VB =14V, IO=1A
Overvoltage protection hysteresis voltage VB (ovphys)

operating current
TTSD
IS
151
165
L. GND
(6)
Circuit Example
VB =14V, Ta=40C
VB =14V, Ta=25C
VB =14V, Ta=125C
TOFF
Tr
10

Output rise time
Output fall time
Output-diag voltage ratio
Diag output clamping voltage
Tf
ra (DIAG)
VDIAG (clamp)
0.195
0.2
0.205
4.85
19
VIN1
VIN2
VIN3
VIN4
4
9
16
21
10
15
22
VOUT1 VOUT2 VOUT3 VOUT4

Diag1
Diag2
Diag3
Diag4
SPF5012
5
8
17
20
Diag
output
P-GND1 P-GND2 P-GND3 P-GND4
1, 2
11,12
13,14
23,24
Truth table
VIN
VO
H
Short L-GND and P-GND

in a pattern near the product.
VB=14V, RL=14, I O=1A
VB =14V, VO =1 to 14V, Rdiag=500k

V
Input
signal
L-GND
18
VCC1-2 VCC3-4 VB
VB =14V
12
Ch4
Diag4
(20)
VOUT4
(22)
P. GND4
(23, 24)
VIN4
(21)
I F=1A
TON
Ch3
Diag3
(17)
VOUT3
(15)
P. GND3
(13, 14)
VIN3
(16)
VCC
25
Diag2
(8)
VOUT2
(10)
P. GND2
(11, 12)
VIN2
(9)
Timing Chart
VB=14V, VCC=5V, VO =40V
OVP
VB
VOUT
VIN
Normal
54
Overvoltage
Overheat
Overcurrent
* Self-excited frequency is used in the overcurrent protection.
55
Stepper-motor Driver ICs SLA4708M
Features
High output breakdown voltage of 50V
Affluent output current of 1.5A
Low standby current of 50A
31.00.2
3.20.15
Input voltage
VS
35
50
VO
VIN
0.3 to +7
1.5
Diagnostic output sink current
IDIAG
10
mA
Diagnostic output withstand voltage
IDIAG. H
Top
40 to +85
Storage temperature
Tstg
40 to +150
PD
3.5 (Ta=25C)
Power Dissipation
Lead plate thickness

resins 0.8 max
9.90.2
8.5max
12
Pin 1
+0.2
0.85 0.1
1.20.15
IO, AVE
Output current
Conditions
2.7
16.00.2
Breakdown voltage
Unit
9.5min (10.4)
Ratings
13.00.2
16.4
(Ta=25C)
Symbol
4.80.2
1.70.7
0.2

Parameter
Ellipse 3.20.15 3.8
24.40.2
+0.2
0.55 0.1
0.15
2.20.7
1.45
0.7
11P2.54
1.0
=27.94
31.5 max
a: Part No.
b: Lot No.
1 2 3 4 5 6 7 8 9 10 11 12
Without heatsink

Parameter
Input voltage
(I A/A, I B/B standby)
Input current
Symbol
(VS =12V, Ta=25C)
min
typ
max
0.8
VIL
VIH
Ratings
2.4
Unit
Output leak current

Overcurrent detection
4
OUTA
I IL
0.8
mA
VIN = 0.4V
I IH
50
VIN = 2.4V
Overvoltage detection
Saturation voltage of diagnostic
output
Standby current
56
VO.STA
1.3
I O = 1A, Ta = 25C
VO.STA
1.5
I O = 1.5A, Ta = 25C
100
I O.LEAK
I SD
1.8
VSD
27.5
I STB
VO = 16V
A
V
VDIAG.L
0.3
50
ZD
V
A
I DIAG = 5mA
VS = 12V
5
OUT A
9
OUT B
SLA4708M
8
1
OUT B VS
12
DIAG
3
I
A /A
I B/B 10
5V
Output saturation voltage
Conditions
STBY
4.7 k
P-GND
6
L-GND
11
L-GND
7
N.C.
CPU
ZD: VS <35V
C 100F
(Reference)
Stepper
motor
Stepper-motor Driver ICs SLA4708M
20
200
14
Ta = 25C
Vcc=12V
Constant (ST = 5V)
100
At Constant IS (mA)
At standby IS (A)
Power supply current
12
10
Common for
all phases
10
8
6
4
At standby (ST = 0V)

2
0
0
0
10
20
30
Power supply voltage VS (V)
0
0
10
20
Power supply voltage VS (V)
Saturation Voltage of Output Transistor Characteristics

Saturation voltage of output transistor Vsat (V)
Power Supply Current Characteristics
30
35
2.0
Vcc (Vs) =16V

Ta =25C
Common for
all phases
1.5
1.0
0.5
0
1.0
2.0
3.0

14
Vcc (Vs) =12V

VST = 5V
12
10
8
T j2
T j1
6
4
2
0
0
110
120
130
140
150
160
Junction temperature Tj (C)
57
2-ph Stepper-motor Driver ICs SPF7211
Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.)
Built-in recovery diode
Built-in standby function
Built-in overcurrent and thermal protection circuits and low voltage input shutoff function
Built-in overload and disconnection detection function
17.280.2
Flag terminal withstand voltage

Flag terminal current
Detect voltage
Power dissipation
Storage temperature
Ratings
40
0.3 to 15
0.8
1.0
7
3
2 to 2
4.1
39
150
40 to 110
40 to 150
PD
Tj
Top
Tstg
Unit
V
V
A
V
mA
V
W
Remarks
VIN
20.2
Symbol
VBB
VIN
Io
IoPeak
VFlag
IFlag
VRs
10.50.3
Fin
thickness
12
+0.15
1.270.25
VBB
0.4 0.05
2.50.2
Output current
1.0 0.05
13

Parameter
Main power supply voltage
Input voltage
+0.1
15.580.2
24
7.50.2
Features
Tw 1mS
VFlag VBB
+0.15
0.25 0.05
a) Part No.
b) Lot No.
For Ta = 25C * 1
For Tc (Ttab) = 25C
C
C
C
Note: *1: With glass epoxy + copper foil board (size 5.07.4cm; t: glass epoxy = 1.6mm /copper foil = 18m)
Recommended Operation Range

Unit
V
V
A
V
mA
V
C
Rs
Remarks
VIN VBB
Continuous
VFlag VBB
I20 24
I21
Ph2
FL1
GND
GND
GND
GND
Out2A
Rs2
FL2
Out2B 13
Ratings
6 to 18
0.3 to 7.0
0.5
0 to 7.0
0 to 1.0
1 to 1
40 to 110
PC
(ECU)
SPM
Parameter
Main power supply current
Low voltage protection operation voltage
UVLO hysteresis voltage
Output leak current
Symbol
IBB
IBBS
VUVLO
VUVLOhys
IoleakL
IoleakH
min
Ratings
typ
3.5
100
100
0.5
0.8
1.2
1.5
1.2
1.3

VsatH
Recovery diode forward voltage
Input terminal
Input voltage
Hysteresis voltage
Ph terminal
Input current
Ixx, Set terminals Input current

Detect voltage
VRs
Oscillation frequency
PWM frequency
Ct terminal threshold voltage
Ct terminal current
Overcurrent detection voltage

Open detection voltage
Flag terminal leak current
Flag terminal saturation voltage
Response pulse
width
Set terminal
Pulse rate
Pulse number
Flag response
time
OCP operation
Open operation
I/O propagation time
Thermal protection temperature

Thermal protection hysteresis
Thermal alarm temperature
Thermal alarm hysteresis
58
V FL
V FH
VFGO
VIL
VIH
VIhys
IIL
IIH
IIL
IIH
Fosc
FPWM
VctL
VctH
Ictsink
Ictsouce
VocpL
VocpH
VocpL
VocpH
Vopen
IleakFlag
VFlagL
IFlag
Tpw
Tpws
Fclock
Pulse
tocp1
tocp2
tocp3
topen1
topen2
tonH1
toffH1
tonH2
toffH2
tonL1
toffL1
tonL2
toffL2
Tj
Tj
Talarm
Talarm
Rs
max
50
50
4.5
0.5
VsatL
1.2
0.8
2.0
0.5
5
5
30
660
420
40
28.8
14.4
1.5
VBB2.5
1.0
VBB2.3
5
5
700
450
70
48
24
0.5
1.5
720
120
3.0
VBB2.0
50
740
480
90
72
36
4.2
VBB1.7
1.85
VBB1.5
60
10
0.5
3
10
100
17
2.5
5.0
5.0
2.5
2.5
24
256
5.0
10.0
10.0
5.0
5.0
1.5
1.5
31
10.0
20.0
20.0
10.0
10.0
100
100
2.0
0.5
100
100
150
120
20
130
20
I11
Ph1
Ct
Set
GND
GND
GND
Out1A
Rs1
VBB
12 Out1B
Symbol
VBB
VIN
Io
VFlag
IFlag
VRs
Top
1 I10
Parameter
Input voltage
Output current
Flag terminal withstand voltage
Detect voltage
140
Unit
Conditions
mA
A
V
V
A
A
V
V
V
V
V
V
V
V
V
V
A
A
A
A
mV
mV
mV
kHz
kHz
V
V
A
A
V
V
V
V
mV
A
V
mA
S
S
Hz
S
S
S
S
S
S
S
S
S
S
S
S
S
C
C
C
C
In ordinary operation (no load)

At sleep
VBB = 40V, Vo = 0V
VBB = Vo = 40V
Io = 0.5A
Io = 0.8A
Io = 0.5A
Io = 0.8A
Io = 0.5A
Io = 0.5A
Io = 0.5A
Ct
2200pF
Rs 1 typ (1 to 2W)
IoM VRs/Rs
2-phase excitation
Clock
Ph1
I10, I11
Ph2
I20, I21
*1
Out voltage
Out voltage
VBB = 5.5V
VBB = 5.5V
Sence voltage
VFlag = 7V
IFlag = 1mA
In ordinary operation
At sleep
Ct = 2200pF
In ordinary operation; Ct = 2200pF
At switching the phase
When Ixx shifts from L to H
In ordinary operation
When Ixx shifts from L to H
*2
Note:
*1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency.
*2: Thermal protection and alarm temperatures are design values.
Excitation Signal Time Chart
0
L
H
L
H
1
H
H
L
H
2
H
H
H
H
3
L
H
H
H
0
L
H
L
H
1
H
H
L
H
1 to 2-phase excitation
Clock
Ph1
I10, I11
Ph2
I20, I21
VIL = 0.8V
VIH = 2.0V
Ix0 = High, Ix1 = High
Ix0 = Low, Ix1 = High
Ix0 = High, Ix1 = Low
Ct = 2200pF20%
Ct = 2200pF20%
VBB = 6 to 18V
+
0
L
H
L
H
1
H
L
L
H
2
H
H
L
H
3
H
H
H
L
4
H
H
H
H
5
L
L
H
H
6
L
H
H
H
7
L
H
L
L
0
L
H
L
H
1
H
L
L
H
2
H
H
L
H
3
H
H
H
L
* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph
excitation (Ixx turns from high to low).
The OPEN detection function is invalid except in this sequence.
2-ph Stepper-motor Driver ICs SPF7211
Vsat Temperature Characteristics (Io=0.5A)
Diode VF Characteristics (IF=0.5A)

1.7
VFGO
VsatH
1
0.8
0.6
0.4
VsatL
1.5
Forward voltage VF (V)
Saturation voltage Vsat (V)
1.2
0.2
1.3
1.1
VFH
0.9
VFL
0.7
0
30 10 10
30 50
0.5
30 10 10
70 90 110 130 150
Junction temperature (C)
OSC Temperature Characteristics
70 90 110 130 150
Ta-PD Characteristics
55
40
Infinite heatsink equivalent
(Tc=25C)
j-tab 3.2C/W
53
FOSC
51
49
47
Oscillation frequency FOSC (kHz)
30 50
30
20
10 Copper foil area

(5.07.4mm, t=18m)
j-a 30.5C/W
Ct=2200pF
45
30 10 10
30 50
70 90 110 130 150
25
50
75
100
125
150
59
Full Bridge PWM Control DC Motor Driver ICs SI-5300
P-ch MOS for high side and N-ch MOS for low side in one package
Enable to drive DC5V
Possible to drive a motor at the LS-TTL, C-MOS Logic level
Guarantee Tj=Tch=150C
Built-in over current protection and thermal shut down circuits
Built-in diagnosis function to monitor and signal the state of each protection circuits
Built-in vertical current prevention circuits (Dead time is defined internally.)
No insulator required for Sanken's original package (SPM package)
4.80.2
(28.4)
(4)
(R0.8)
R-end
+0.2
0.750.1
+0.2
0.450.1
14 P2.030.1=(28.42)

Parameter
Symbol
Ratings
Unit
40
20.5
350.3
(Ta=25C)
VM
Motor supply voltage
4.50.7
Conditions
a: Part No.
b: Lot No.
V
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IN1
0.3 to 7
IN2
0.3 to 7
PWM
0.3 to 7
IO
IO (p-p)
17
Output current
Equivalent Circuit
VM
VM
PW
1ms, Duty
VM
50%
B
fPWM
PWM control frequency
20
kHz
Duty=20% to 80%
OCP
Pre-Rec
OCP
Pch1
Forward reverse rotation switch frequency*
fCW
500
Hz
TOP
40 to +85
Tj, Tch
40 to +150
TSD
Q
R
40 to +150
Tstg
j-c
3.7
C/W
j-a
35
C/W
B
S
Dead
Time
IN1
Storage temperature
FF
Pch2
OUT1
Junction and channel temperature
PWM
ECU inside
VCC
PULL-UP
Resistor
OUT2
Nch1
PWM
down
edge
sense
Thermal resistance
DIAG
Nch2
A
A
OCP
OCP
B
Dead
Time
IN2
PD1
3.6
Without heatsink
PD2
33.7
Power dissipation
Note: * The dead time for the length current prevention in positive and the reversing switch is set by
internal control IC. The set point in internal IC at the dead time is 20s (typical).
Please take into account the dead time and consider the load conditions when you use the IC.
Ratings
min
typ
LGND
max
0.8
IO=3A
V, VO-PG
0.3
IO=3A
I L, L
100
VM=40V
I L, H
100
VM=40V
*
15 *3
VPWM: L
VPWM: H
10
10 2
tpHL
tpHL-tpLH
Static circuit current
H (Vth=2.5V typ)
IO=10A
0.8
IO=3A
1.0
IM1
22
mA
Stop mode
IM2
22
mA
Forward and reverse mode
16
mA
VIN, L
IIN, L
V
2.0
IIN, H
200
OUT1
t DIAG
20
ms
VD L
Vth
VOUT
GND
VOUT*0.9
OUT terminal
GND
tpLH
Output transmission
time tpLH is time from
Vth (2.5V typ) of the
terminal of PWM to
output (VOUT *0.9) of
the output terminal.
ID SINK=1mA
Breake
Breake
High inpidance
High inpidance
IOUT (A)
*4
GND
OUT terminal
VOUT *0.1
tpHL
Protection circuit
Return to constant action

VM=2V
VM=2V
VM
IN1
IN2
PWM
Vth
GND
Output transmission
time tpHL is time from
Vth (2.5V typ) of the
terminal of PWM to
output (VOUT *0.1) of
the output terminal.
VM-OUT1
(Pch1 VDS)
VM-OUT2
(Pch2 VDS)
VOUT1-GND
(Nch1 VDS)
VOUT2-GND
(Nch2 VDS)
OUT1
OUT2
*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.
60
Stop
(Free Run)
OUT2
GND
VPWM (5V)
PWM terminal
Stop
(Free Run)
C=1F (typ)
*3: Output transmission time (tpHL)
VPWM (5V)
PWM terminal
Reverse
Duty OFF
High inpidance
Note:
*1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the
protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H 0V: L) is input to the
terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25C, fPWM=10kHz, VM=14V) are assumed
to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2).
It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.
*2: Output transmission time (tpLH)
Reverse
Duty ON
IN2
VIN1=VIN2=VPWM=5V
1
DIAG output pulse width
Forward
Duty OFF
IN1
VIN1=VIN2=VPWM=0V
4,12
PGND
Brake mode
VIN1=VIN2=VPWM
16
0.3
Forward
Duty ON
VIN1=VIN2=VPWM
IOCP
8
LGND
Delay Capacitor
1F
Therminal name
OPC start current
Timing Chart
IO=10A
PWM
100
9
TDIAG
Pull-up Resistor
10k
(Open Collector)
L (Vth=2.5V typ)
IO=3A
3.0
SI-5300
10 DIAG
VCC
IM3
14, 15
OUT2
7 PWM
VIN, H
6 IN1
1.0
VF H
3, 5, 13
VM
1, 2
OUT1
11 IN2
CPU
0.8
VF L
Forward voltage
characteristic of diode
between drain and source
Capacitor
220F
Battery
V, VM-VO
Output transmission time
PGND
Conditions
VM=24V (2 min.)
tpLH
Unit
V
Output leakage current
CDIAG
1F
PGND
(Unless, otherwise specified, Tj=Tch=25C, VM =14V, IO =3A)
18
VIN
Motor supply voltage
TDIAG
Relay
Symbol
DIAG
CONTROL
Parameter
3.60.5
(R0.8)
7.60.5
16.10.2
2.70.2
(4.5)
Features
IOUT (A)
TDIAG
DIAG DIAG Threminal
VCC=5V Pull-up
20ms
(min)
Full Bridge PWM Control DC Motor Driver ICs SI-5300
Output saturation voltage (Pch)
Output saturation voltage (Nch)
Forward voltage of Diode between drain and source
0.5
1.0
12
VM=14V
VM=14V
Ta=25C
10
0.4
0.8
Nch
MOS FET
Ta=85C
Ta=25C
0.4
Ta=40C
0.2
Ta=85C
0.3
Ta=25C
I FSD (A)
0.6
VVO -PG (V)
VVM -VO (V)
Ta=150C
Ta=150C
Ta=40C
0.2
2
0
I O (A)
0.2
0.4
I O (A)
0.6
1.2
0.6
Duty on
VM=14V
VM=14V
Brake
0.5
12
Duty off
Ta=150C
VO (V)
Stop
I SINK (mA)
0.4
I M (mA)
1.0
Current of input terminal (SINK current)
16
15
0.8
VFSD (V)
Voltage of input terminal (Threshold voltage)
25
20
Pch
MOS FET
4
0.1
Ta=150C
Ta=25C
Ta=40C
10
Ta=85C
Ta=25C
0.3
Ta=40C
0.2
4
5
0.1
I O=0A
Ta=25C
10
20
30
40
VM (V)
VIN1, IN2, PWM (V)
Current of input terminal (Source current)
VIN1, IN2, PWM (V)
VTDIAG VDIAG Characteristics
Thermal shut down protection
Pull-up resistance =3k
12
Ta=25C
Ta=150C
Ta=25C
Ta=40C
Ta=40C
10
20
30
40
VM (V)
0
100
Pch MOS FET Safe Operating Area (SOA)
150
175
200
Ta (C)
Nch MOS FET Safe Operating Area (SOA)
PD Ta Characteristics
40
100
100
Tc=25C
Tc=25C
1ms
1ms
10ms
I OUT (A)
10
100ms
10
10ms
100ms
0.3
0.3
2
125
VTDIAG (V)
Allowable Power Dissipation PD (W)
I OUT (A)
4
VDIAG (V)
Ta=150C
VDIAG (V)
IIN1, IIN2, PWM source (A)
10
VM=10V
I O=0A
VM=14V
I IN1=I IN2=PWM=0V
10
VM-OUT (V)
40
100
10
VOUT -PG (V)
40
100
35
Infinite heatsink (Tc =25C)
30
25
20
15
10
5
No heatsink
0
40 30
25
50
75
100
61
Full Bridge DC Motor Driver ICs SPF7301(under development)
A DMOS of low ON resistance (0.1 typ) is mounted on the high and low side
power elements
Two input signals control the forward/reverse/brake of a DC motor
Current limit and overcurrent protection circuits
Low voltage and thermal protection, excess input detecting output and input
terminal open protection
Symbol
Ratings
Unit
VB
VIN1,VIN2
VEN
VDI
Io
IoPeak
VDIAG
IDIAG
P D1
P D2
Tj
Top
Tstg
0.3 to 36
0.3 to 6
0.3 to 12
0.3 to 6
7
15
0.3 to 6
3
39
4
40 to 150
40 to 105
40 to 150
V
V
V
V
A
A
V
mA
W
W
C
C
C
j-c
3.2
C/W
j-a
31
C/W
Storage temperature
Thermal resistance
(junction to case)
Thermal resistance
13.04
20
10
0.4 0.05
a) Part No.
b) Lot No.
DIAG terminal sink current

With an infinite heatsink mounted
*1

VB
Ratings
Unit

DI terminal input voltage
Input terminal input voltage
Output current
VB
VDI
VINx
Io
VDIAG
Top
8 to 18
0.3 to 5.3
0.3 to 5.3
1
0.3 to 5.3
40 to 105
V
V
V
A
V
C
Full Brige Driver IC
Main power supply current

Low voltage protection
operation voltage
UVLO hysteresis voltage
Output terminal leak current
Output DMOS RDS (ON)
Forward voltage
characteristics between
output DMOS and DS
Overcurrent limiting
operation current
OPC start current

VIN1, VIN2
VIN1, VIN2
DI terminal voltage
DI terminal current
EN terminal input voltage
EN terminal input current
DIAG terminal output voltage
DIAG terminal output current
DIAG terminal leak current
Input delay time
Overvoltage protection operation voltage

OVP hysteresis width
Thermal protection starting temperature
Thermal protection hysteresis width
62
Ratings
typ
15
max
100
7.0
6.5
5.0
4.5
0.5
100
4.5
4.5
4.5
4.5
100
100
100
100
1.5
1.5
1.5
1.5
7
7
7
7
15
15
15
15
100
200
200
200
200
10
10
10
10
2
0.8
100
100
2
0.8
100
100
0.8
4
100
10
0.8
10
1.5
10
35
151
40
5
165
15
15
20
15
6
6
4
45
M
OUT2
Cin
R1
R2
RDI
PGND
LGND
* Recommended connection parts

Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF
DIAG terminal pull-up resistance RDIAG: 20k
Input terminal pull-down resistance R1, R2, RDI: 10k
Unit
mA
A
V
V
V
A
A
m
m
m
m
V
V
V
V
A
A
A
A
A
A
A
A
V
V
A
A
V
V
A
A
V
A
A
V
mA
A
S
S
S
S
S
V
V
C
C
OUT1
SFP7301
Remarks
(Tj = 30 to 125C, VB = 14V, EN = DI = 5V, Ccp = 33nF,

RDIAG = 20k unless otherwise specified) * 2
RDIAG
IN1
DI
Symbol
min
Ccp
DIAG
IN2
Parameter
Vcc
EN CP
IBB1
IBB2
VuvloH
VuvloL
UVLO
IleakHS
IleakLS
RDS(ON)_1H
RDS(ON)_2H
RDS(ON)_1L
RDS(ON)_2L
VF_H1
VF_H2
VF_L1
VF_L2
Iocp1_H1
Iocp1_H2
Iocp1_L1
Iocp1_L2
Iocp2_H1
Iocp2_H2
Iocp2_L1
Iocp2_L2
VINxH
VINxL
IINxH
IINxL
VDIxH
VDIxL
IDIxH
IDIxL
VENth
IENH
IENL
VDIAG
IDIAG
IDIAGL
TdON
TdOFF
Tr
Tf
Tddis
VOVP
VOVP
Ttsd_ON
Ttsd
0.250.05
1kHz, Duty 1%, Pulse 10S
Power
supply
Symbol
+0.15
+0.15
1.270.25
Note: *1: With glass epoxy + copper foil board (size 5.0 7.4cm; t: glass epoxy = 1.6mm /copper foil = 18m)
Parameter
20.2
Remarks
10.50.3
11
2.50.2
Parameter
Power dissipation
Fin
thickness
(Ta=25C)

Input terminal input voltage
EN terminal voltage
Disable terminal input voltage
DIAG output current

DIAG inflow current
1.0 0.05
0.2
Output current
+0.1
14.740.2
7.50.2
Features
Conditions
For VEN = 0V
Io1 = 1A
Io2 = 1A
Io1 = 1A
Io2 = 1A
VDI = 5V
VDI = 0V
VDI = 5V
VDI = 0V
VEN = 5V
VEN = 0V
IDIAG = 0.5mA
For VDIAG = 1.6V
Time from VINxH to Voutx0.2
Time from VINxL to Voutx0.8
Time of Voutx from 20% to 80%
Time of Voutx from 80% to 20%
Time from DIthH to Voutx0.2
*3
*3
Note:
*2: For the electrical characteristics for Tj = 40 to 150C, the design warranty applies to the above specification values.
*3: Thermal protection starting temperature is 165C (typ) by design. The above parameters are the design specifications.
63
High Voltage Full Bridge Drive ICs SLA2402M
Features
One Package Full Bridge Driver Consisted of High Voltage IC and Power
MOS FETs (4 pieces)
High Voltage Driver which accepts direct connection to the input signal line
External components such as high voltage diodes and capacitors are not required
3.2 0.15
Ratings
Unit
VM
500
Conditions
0.65
+0.2
0.1
16.00.2
13.00.2
9.90.2

resins 0.8 max
9.5 min
Symbol
4.80.2
1.70.1
2.7
Parameter
Power source voltage
Ellipse 3.2 0.15 3.8
16.4 0.2
8.5 max
31.0 0.2
24.4 0.2
+0.2
2.450.2
1.0 0.1
+0.2
17 P1.68 0.1 =28.56
Input voltage
VIN
15
Output voltage
VO
500
Output current
IO
15
PW
Power dissipation
PD
5 (Ta=25C)
Without heatsink
Storage temperature
Tstg
40 to +125
Operation temperature
Topr
40 to +105
0.55 0.1
31.5 max
250s
a: Part No.
b: Lot No.
* Power GND (D terminal) to -HV (-HV terminal) voltage.
Block Diagram
Parameter
Symbol
Power MOS FET output

breakdown voltage
BVOUT
Ratings
min
typ
Unit
max
Conditions
7
500
IO=100A
MOSQ1
IOUT (off)
High-side Power MOS FET

output on-state voltage
Low-side Power MOS FET
100
MOSQ'2
LO1
GL1
15
OUT2
MIC
MOSQ'1
VO=500V
MOSQ2
HO2
HO1
OUT1

leakage voltage
+12V
VCC
D1
VIN1
HV
VIN2
LO2
L GND
GL2
IO=0.4A, VIN=10V
VOUT (on) 1
0.28
0.4
0.52
VOUT (on) 2
1.4
2.0
2.6
IO=2A, VIN=10V
VOUT (on) 1
0.28
0.4
0.52
IO=0.4A, VGL=10V
VOUT (on) 2
1.4
2.0
2.6
IO=2A, VGL=10V
ICC 1
3.0
mA
VCC=4.5 to 15V
10
11
13
16
CPU
* Dotted Line: Outside Connection

ICC 2
4.0
mA
VCC=10V, VM=400V
ICC 3
4.0
mA
VCC=10V, VM=400V
Input voltage (High level)
VIH
Input voltage (Low level)
VIL
Delay time
Operating voltage
0.8VCC
0.2VCC
VCC=4.5 to 15V
VCC=4.5 to 15V
Timing Chart
t d (on)
1.4
VCC=10A, VIN=10V,
t d (off)
3.3
VM=85A,
2.5
IO=0.41A
VCC
15
40 to +105C
Ignition
VCC
IN1
IN2
* About delay time
HO1
Signal input waveform vs output waveform
LO2
1 Highside switch turn-on, turn-off
2 Lowside switch turn-on, turn-off

HO2
VIN1
0V
10%
VIN1
10%
10%
0V
10%
LO1
HV
0V
0V
10%
10%
OUT2-GND
td (on)
td (on)
Measurement Circuit
VIN2
RL
VOUT1
VOUT2
td (on)
Conditions
VCC=10V, VIN=10V (pulse)
VM=85V
IO=0.41A (RL=207)
* When pulse signal is inputted to VlN1,

VIN2
VIN1
VM
64
100V
VOUT2
* t: t = td (on) td (off)
VIN1
0V
10%
10%
VOUT1
RL on solid line is ON and dotted line

RL is off.
On the contrary, when pulse signal is
inputted to VlN2, RL on dotted line is
ON and dotted line RL is off.
td (on)
400V
OSC 400Hz
17
Quiescent circuit current supplied high voltage
25C
40C
1.0
0.5
2.5
150C
2.0
105C
1.5
25C
1.0
40C
0.5
0
0
0
10
15
100
300
400
VIN=0V
VM=400V
105C
3
25C
2
40C
1
10
15
12V
1.5
10V
9V
1.0
0.5
4.5V
200
300
400
VCC =VIN =10V
10V
1.5
9V
1.0
0.5
4.5V
40C
0
2
100
500
Ta=25C
8
VCC=15V
VCC=9V
VCC=
4.5V
0
0
50
100
150
10
15
Ambient temperature (C)
Output on-state voltage
400
10
Output current (A)
300
Gate drive voltage
0
50
200
High voltage VM (V)
Gate drive voltage VGL (V)
Input threshold voltage

8
5
Input threshold voltage VIH, VIL (V)
VCC=VIN=10V
4
3
I O=2A
2
1
I O=0.4A
0
50
12V
25C
VCC=
15V
2.0
VCC=10V
500
2.5
500
10
105C
400
0
100
Gate drive voltage
150C
300
3.0
High voltage VM (V)
200
Ta=25C
VCC=
15V
2.0
10
100
2.5
20
0.5
3.5
Operation voltage VCC (V)
1.0
0
5
40C
High voltage VM (V)
Ta=25C
150C
25C
1.5
500
3.0
Quiescent circuit current ICC2 (mA)
200
105C
2.0
High voltage VM (V)
150C
2.5
0
0
20
Output on-state voltage (V)
VCC=VIN1(2)=10V
Operating circuit current ICC3 (mA)
1.5
3.0
VIN=0V
VCC=10V
2.0
2.5
150C
105C
VIN=0V
Output on-state voltage (V)
3.0
3.0
50
100
150
VCC=10V
VIH
6
5
4
VIL
3
2
1
0
50
50
100
150
65
High side switch turn-on, off
5.0
5.0
Ta=25C
VM=85V, I O=0.41A
5.0
VM=85V, I O=0.41A
VCC=10V
4.0
Ta=25C
VM=85V, I O=0.41A
turn-off
turn-off
3.0
2.0
4.0
turn-on, off (s)
4.0
turn-on, off (s)
turn-on, off (s)
Low side switch turn-on, off
3.0
2.0
turn-off
3.0
2.0
turn-on
turn-on
1.0
0
6
10
12
14
0
50
16
turn-on, off (s)
3.0
2.0
turn-on
1.0
50
100
150
Power derating curve

6
Power dissipation (W)
150
without heatsink
4
3
2
1
50
100
150
10
12
14
16
Safe operating area (Power MOS FET)

RDS (on)
limited
10
10
0.1
100s
1ms
1
10ms
0.1
0.01
0.001
0.0001 0.001
100
Ta=25C
Single pulse
0.01
0.1
Power time (s)
Transient thermal resistance (C/W)
turn-off
4.0
66
100
100
VM=85V, I O=0.41A
VCC=10V
0
50
50
Transient thermal resistance characteristics
5.0
0
0
0
50
1.0
Drain current (A)
turn-on
1.0
10
100
Ta=25C
Single pulse
0.01
10
100
Drain to source voltage (V)
1000
67
Features
MOS FETs (4 pieces)
External components such as high voltage diodes and capacitors are not required
3.2 0.15
Ratings
Unit
VM
500
Input voltage
VIN
15
Output voltage
VO
500
IO
Tc=25C
IO (peak)
15
PW
Conditions
0.65
+0.2
0.1
16.00.2
13.00.2
9.90.2

resins 0.8 max
9.5 min
Symbol
+0.2
2.450.2
1.0 0.1
+0.2
17 P1.68 0.1 =28.56
0.55 0.1
31.5 max
Output current
Power dissipation
4.80.2
1.70.1
2.7
Parameter
Power source voltage
Ellipse 3.2 0.15 3.8
16.4 0.2
8.5 max
31.0 0.2
24.4 0.2
a: Part No.
b: Lot No.
250s
5 (Ta=25C)
Without heatsink
40 (Tc=25C)
PD
Storage temperature
Tstg
40 to +125
Operation temperature
Topr
40 to +125
Tj
150
Block Diagram
* Power GND (D terminal) to -HV (-HV terminal) voltage.
Parameter
Symbol
MOSQ2
MOSQ1
4
Ratings
min

breakdown voltage
BVOUT

leakage voltage
IOUT (off)
High-side Power MOS FET

VOUT (on)
0.18
Lowside Power MOS FET

VOUT (on)
0.18
typ
Unit
max
Conditions
D1
VCC
HO1
OUT1
VIN1
IO=100A
100
VO=500V
0.26
0.34
IO=0.4A, VIN=10V
0.26
0.34
IO=0.4A, VGL=10V
500
MOSQ'2
LO2
LO1
GL1
HV
VIN2
10
GL2
L GND
11
13
17
CPU
ICC 1
3.0
mA
VCC=6 to 15V
ICC 2
4.0
mA
VCC=10V, VM=400V
ICC 3
4.0
mA
VCC=10V, VM=400V
Input voltage (High level)
VIH
Input voltage (Low level)
VIL
Delay time
0.8VCC
0.2VCC
VCC=6 to 15V
VCC=6 to 15V
VCC
IN1
t d (on)
2.0
VCC=10A, VIN=10V,
t d (off)
3.0
VM=85V, IO=0.41A
40 to +125C
VCC
Operating voltage
15
Timing Chart
Ignition
IN2
HO1
* About delay time
LO2

HO2

LO1
VIN1
0V
10%
VIN1
10%
10%
0V
10%
HV
0V
10%
10%
VOUT1
10%
10%
td (on)
td (on)
VOUT2
td (on)
* t: t = td (on) td (off)
Measurement Circuit
VIN1
VIN2
RL
VOUT1
VOUT2
VIN2
VIN1
VM
68
0V
100V
0V
Conditions
VM=85V
IO=0.41A (RL=207)

RL is off.
td (on)
OUT2-GND
400V
D2
15
OUT2
MIC
MOSQ'1
HO2
OSC 400Hz
14
16
2.5
85C
2.0
25C
1.5
40C
1.0
0.5
4.0
VIN=0V
VCC=10V
2.5
125C
2.0
85C
1.5
25C
1.0
40C
0.5
0
10
15
100
400
85C
25C
40C
10
15
40C
1.0
0.5
0
2.5
2.0
12V
1.5
10V
9V
1.0
6V
0.5
100
200
300
400
VCC=
15V
2.5
12V
2.0
10V
9V
1.5
1.0
6V
0.5
0
100
200
300
400
500
High voltage VM (V)
Gate drive voltage
10
10
Ta=25C
VCC=VIN=10V
150C
125C
85C
25C
40C
Output current
6
VCC=6V
4
0
50
0
4
VCC=15V
VCC=10V
Input threshold voltage VIH (V)
500
3.0
500
400
3.5
High voltage VM (V)
300
0
0
20
200
Ta=25C
VCC=
15V
3.0
100
0
0
25C
1.5
500
85C
2.0
High voltage VM (V)
Ta=25C
125C
125C
2.5
4.0
150C
VCC=10V
VCC=
6V
0
0
50
100
150
200
I OUT (A)
10
15
Gate drive voltage

10
7
Input threshold voltage VIL (V)
VCC=VIN=10V
3
I O=2A
1
I O=0.4A
0
50
50
100
150
6
300
VOUT (ON) (V)
200
3.5
VIN=0V
VM=400V
150C
3.0
High voltage VM (V)

5
3.5
0
0
20
VCC=VIN1(2)=10V
150C
150C
125C
VIN=0V
Output on-state voltage VOUT (ON) (V)
3.0
3.0
5
4
VCC=10V
3
2
VCC=6V
8
VCC=10V
6
VCC=6V
1
0
50
50
100
150
0
50
50
100
150
69
5.0
VM=85V, I O=0.41A
VCC=10V
2.0
turn-on
3.0
2.0
turn-on
10
12
0
50
14
turn-off
3.0
turn-on
1.0
50
100
150
100
150

50
Tc=25C
30
20
10
without heatsink
50
100
150
10
12
14
Safe operating area (Power MOS FET)

100
RDS (on)
limited
10
10s
100s
10
0.1
1ms
1
10ms
0.1
0.01
0.001
0.001
Ta=25C
Single pulse
0.01
0.1
Power time (s)
4.0
0
50
50
100
VM=85V, I O=0.41A
VCC=10V
40
0
0
5.0
0
50
2.0
2.0
turn-off
1.0
Drain current (A)
3.0
turn-on
1.0
turn-on, off (s)
4.0
turn-off
turn-on, off (s)
turn-off
3.0
1.0
PD (W)
Ta=25C
VM=85V, I O=0.41A
4.0
turn-on, off (s)
turn-on, off (s)
4.0
Power derating
5.0
5.0
Ta=25C
VM=85V, I O=0.41A
70
10
100
Ta=25C
Single pulse
0.01
10
100
Drain to source voltage (V)
1000
71
High Voltage Full Bridge Drive ICs SMA2409M
Features
IGBT (4 pieces)
31.0 0.2
(Ta = 25C)
Symbol
Ratings
Unit
VM
500
Input voltage
VIN
15
Operation voltage
Vcc
15
Vo
Output voltage
500
(10.4)
Parameter
2.70.2
10.20.2
4.00.2
Conditions
Power GNG to HV
+0.2
+0.2
1.16 0.1
0.65 0.1
+0.2
1.2 0.2
0.55 0.1
14 P2.03 0.1= (28.42)
(root dimensions)
(root dimensions)
Output current (DC)

Output current (pulses)
Io(DC)
Io(pulse)
15
a: Part No.
b: Lot No.
W
Tc = 25C
20
j-a
31.2
j-c
6.2
Topr
40 to +105
Storage temperature
Tstg
40 to +150
Tj
150
IGBT single pulse

avalanche resistance
EAS
mJ
VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A
ESD protection
ESD
kV
Human body model (C = 100pF, R = 1.5k)
Thermal resistance
31.3 0.2
Single pulse (PW = 50s max.)
PD
Power dissipation
CW
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Tc = 25C
Block Diagram
(Ta = 25C)
4
Parameter
IGBT output breakdown voltage
BVOUT
570
Io = 0.4A, VIN (or VGL) = 10V
1.3
1.8
Io = 2.0A, VIN (or VGL) = 10V
Icc1
3.0
mA
Vcc = 10V, VM = VIN = 0V
Icc2
4.0
mA
Vcc = 10V, VM = 400V, VIN = 0V
Icc3
4.0
mA
Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V
High side
Delay time*
Low side
16
0.8Vcc
t d (on)
0.6
0.7
0.8
t d (off)
1.8
2.2
2.6
t d (on)
0.8
0.9
1.0
t d (off)
1.3
1.6
1.9
2.5
t d = H/S t d (off) - L/S t d (on)

or L/S t d (off) - H/S t d (on)
15
Ta = 40 to +105C
Vcc
LO1
VIN1
HV VIN2 L GND
IGBT Q'2
GL2
10
11
13
CPU
Vcc = 9 to 15V
Timing Chart
VM = 85V, Io = 0.41A
Vcc = 10V
VIN = 10V (Out Stage = ON)
VIN = 0V (Out Stage = OFF)
A Drive Example
Ignition
OSC250Hz
VCC
IN1
IN2
LO1
LO2

Parameter
min
td
typ
0V
85V
400V
Ratings
Symbol
Dead time
HVGND
max
Unit
85V
400V
5.0
OUT1GND 0V
Conditions
Ta = 40 to +105C
0V
85V
OUT2GND
400V
* About delay time

VIN1
0V
10%

VIN1
0V
10%
0V
0V
10%
10%
Vout1
td(on)
VIN2
RL
VIN1
VOUT1
VIN2
10%
Vout2
td(off)
Measurement Circuit
72
10%
Conditions
VM=85V
IO=0.41A (RL=206)
VOUT2
VIN1

RL is off.
10%
10%
12
OUT2
LO2
Vcc = 9 to 15V
VGL
td
Operating voltage
0.2Vcc
D2
HO2
MIC
Vo = 500V
0.8Vcc
IGBT Q'1
GL1
Io = 100A, Tj = 25C
VIL
Low-side IGBT gate drive voltage
VIH
IGBT Q2
VCC
OUT1
1.2
VOUT (on)
max
Conditions
100
IOUT (off)
IGBT output ON voltage
typ
Unit
1.0
IGBT output leak current
min
IGBT Q1
HO1
Ratings
Symbol
D1
14

4.0
105C
2.5
25C
2.0
1.5
40C
1.0
0.5
0
3.5
3.0
150C
2.5
105C
2.0
25C
1.5
40C
1.0
0.5
0
10
15
100
40C
10
15
12V
2.0
10V
9V
1.5
1.0
6V
0.5
4.5V
300
400
Input threshold voltage VIL (V)
1.8
1.6
I O=2A
1.2
1.0
I O=0.4A
0.8
100
6V
0.5
4.5V
100
200
150
300
400
500
VCC=15V
12
6
VCC=9V
10
8
VCC=9V
6
4
2
0
50
100
150
200
14
12
6
VCC=15V
4
3
VCC=9V
0
50
15
Gate drive voltage
10
VCC=15V
10
8
VCC=9V
6
4
2
1
50
1.0
Gate drive voltage
VCC=VIN=10V
10V
9V
2.0
0.6
50
1.5
14
I OUT (A)
1.4
12V
2.0
High voltage VM (V)
0
50
0.5
Output current
2.5
500
1.0
500
VCC=
15V
Ta=25C
Input threshold voltage VIH (V)
VOUT (ON) (V)
200
VCC=15V
1.5
400
3.0
High voltage VM (V)
150C
105C
25C
40C
300
10
200
0
100
100
Ta=25C
VCC=
15V
2.5
2.0
0.5
High voltage VM (V)
3.0
20
40C
1.0
3.5
VCC=VIN=10V
25C
1.5
0
0
105C
2.0
500
25C
400
Ta=25C
300
3.5
125C
200
150C
VIN=0V
VM=400V
150C
2.5
High voltage VM (V)
3.0
0
0
20
Output on-state voltage VOUT (ON) (V)
VCC=VIN1(2)=10V
3.0
3.5
VIN=0V
VCC=10V
150C
VIN=0V
3.5
50
100
150
200
0
50
50
100
150
73
3.5
2.5
3.0
t d (off)
2.0
1.5
1.0
2.0
1.5
2.5
t d (off)
2.0
1.5
1.0
t d (on)
t d (off)
1.0
t d (on)
0.5
t d (on)
0.5
0.5
0
9
11
13
0
50
15
0
0
50
100
150
2.5
t d (off)
1.5
1.0
t d (on)
0.5
11
13
15
IGBT ASO characteristics
100
2.0
100
10
Collector current (A)
turn-on, off (s)
turn-on, off (s)
3.0
turn-on, off (s)
turn-on, off (s)
10
100s
1
1ms
0.1
Ta = 25C
Single pulse
10ms
0
50
50
100
150

5
Power derating
PD (W)
without heatsink
50
100
74
0.01
0.1
Power time (s)
0
50
0.01
0.001
150
10
100
0.1
10
100
Collector-emitter voltage (V)
1000
75
Custom ICs
Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips.
Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available.
Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic
devices.
Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic
IC configuration.
Features
All semiconductor chips used are
Examples of Sanken Automotive Hybrid ICs
manufactured by Sanken.
Main product lineup consists of
power ICs produced out of many
Lead frame type

multi-chip power IC
One-chip power IC
Lead frame type

power hybrid IC with
ceramic substrate
High-output high-breakdown voltage IC

Simplified integration of custom circuits
Distribution of unit functions
(Actuators may be built in the device)
years' experience of Sanken.

Uses monolithic chips with flip-chip
construction.
Mainly available in miniature
transfer-mold packages.
Examples of Custom Hybrid IC

Products
Regulators for alternators
Igniters
Power supply for microcomputer
system
Power steering control IC
Motor and actuator driver
Others
Surface-mount
power IC
76
Custom ICs
4.2
4.0
20.2
16.9
19.9
4.0
25.25
9.0
10.0
9.0
5.0
15.6
STA 10pin
STA 8pin
FM205
MT-100
SMA15pin
4.0
4.0
SLA18pin
16.0
3GR-F
3GR-M
5.5
5.5
19.8
23
16.0
STR-S
SPM
5.5
24.2
23
15.6
4.8
31.0
4.8
31.0
4.8
31.0
10.2
10.2
31.0
23
31.0
SLA15pin
SLA12pin
16
SMA12pin
SMD16pin
SPF16pin
12.05
16 15 14 13 12 11 10 9
9
16.1
7.5
6.8
9.8
16
Pin 1
20.0
8
2
2.5
4.0
SPF20pin
10.5
4.8
35
SPF24pin
+0.1
17.28
1.0 0.05
Fin
thickness
24
13
7.5
20.2
7.5
0.2
11
10.50.3
20
10.6
14.740.2
13.040.2
10
1
+0.15
0.4 0.05
2.50.2
1.270.25
12
+0.15
0.25 0.05
2.5
77
78
2 Discretes
2-1. Transistors
2-2. MOS FETs

.........................................
2-1-1. Transistors
80
2-2-1. MOS FETs
.........................................
108
...
108
......
80
2SK3710 (60V/70A/6m, Surface-mount)
....................................
81
2SK3711 (60V/70A/6m) .............................. 109
12A) .................................... 82
2SA1488/1488A (60V/4A, 80V/4A)

2SA1567 (50V/12A)
.....................................
83
2SK3724 (60V/80A/5m, Surface-mount) ... 110

2SK3800 (40V/70A/6m, Surface-mount) .. 111
...................................
84
2SK3801 (40V/70A/6m) .............................. 112
2SC3852 (60V/3A) ........................................... 85
2SK3803 (40V/85A/3m, Surface-mount) ... 113
2SA1568 (60V/
2SA1908 (120V/8A)
2SB1622 (200V/15A)
2SC4024 (50V/10A)
........................................
......................................
87
........................................
88
2SC4065 (60V/12A)
2SC4153 (120V/7A)
2SK3851 (60V/85A/4.7m)
..........................
114
...
115
FKV460S (40V/60A/9m, Surface-mount)

FKV660S (60V/60A/14m, Surface-mount)
89
....................................
90
SDK06 (525V/3A/0.25, Surface-mount 4-circuits) 117
........................................
91
SDK08 (50V/4.5A/0.08, Surface-mount 4-circuits)
...........................................
92
SDK09 (12V/6A/0.2, Surface-mount 4-circuits) 119
.................................
93
SLA5027 (60V/12A/0.08, 4-circuits)
2SD2382 (605V/6A)
2SD2633 (150V/8A)
MN611S (11510V/6A)
MN638S (38050V/6A) ................................... 94
..........
117
118
120
SLA5098 (40V/20A/0.017, 6-circuits) ....... 121

..........
...........
95
SMA5113 (450V/7A/1.1, 4-circuits)
............................
96
STA508A (120V/6A/0.2, 4-circuits) ........... 123
96
STA509A (525V/3A/0.25, 4-circuits)
SSD103 (655V/6A, Surface-mount)

2-1-2. Transistor Arrays
2-2-2. MOS FET Arrays
...........................
116
..................................
2SD2141 (38050V/6A)
FP812 (100V/8A)
86
SDA03 (60V/6A, Surface-mount 4-circuits)
.......
122
124
SDA04 (60V/6A, Surface-mount 2-circuits) 97

SDC09 (655V/6A, Surface-mount 2-circuits)
SLA8004 (60V/12A, 55V/12A, H-bridge)
98
.........
99
SPF0001 (11510V/6A, Surface-mount 2-circuits) 100

STA315A (355V/2A, 3-circuits)
..................
101
..................
102
..................
103
STA460C (6010V/6A, 2-circuits) .............. 104

STA461C (655V/6A, 2-circuits)
................
105
STA463C (11510V/6A, 2-circuits) ............ 106

STA464C (655V/6A, 4-circuits)
..................
107
2-3 Thyristors
2-3-1. Reverse Conducting Thyristors .. 125
TFC561D (600V, 430A, 1200A/s)
..............
125
TFC562D (600V, 600A, 1600A/s)
..............
126
..........................
127
2-4. Diodes
2-4-1. Alternator Diodes
..
128
...................
129
..........
130
2-4-2. High-voltage Diodes for Igniter

2-4-3. Power Zener Diodes
2-4-4. General-purpose Diodes
79
Power Transistor 2SA1488/1488A
IEBO
V(BR) CEO
hFE
VCE (sat)
fT
COB
VCB =
VEB = 6V
IC = 25mA
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 12V, IE = 0.2A
VCB = 10V, f = 1MHz
10.0
a
b
RL
()
6
IC
(A)
2
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
200
2.54
t on
t stg
tf
IB2
(mA) (s)
(s)
(s)
200 0.25typ 0.75typ 0.25typ
0.45
2.54
2.2
a) Part No.
b) Lot No.
(Unit: mm)
B C E
IC VCE Characteristics (typ.)

60mA
50mA
40mA
1A
0
0
0
0.01
0.05 0.1
VCE (V)
0.5
)
tu re
tu re
p e ra
1.0
1.5
VBE (V)
hFE IC Temperature Characteristics (typ.)

(VC E = 4V)
500
e te
m
0.5
IB (A)
hFE IC Characteristics (typ.)
(C a s
C
125
2A
re)
atu
per
IC = 3A
IB = 5mA
p e ra
tem
0.5
3 0 C
10mA
se
20mA
1.0
e te
m
VCE (sat) (V)
30mA
IC (A)
IC (A)
( VC E = 4 V)
(C a s
IC VBE Temperature Characteristics (typ.)
1.5
2 5 C
0m
VCE (sat)IB Characteristics (typ.)
(Ca
C0.5
2.6
1.35
1.35
0.85
Typical Switching Characteristics (common emitter)

VCC
(V)
12
4.2
2.8
3.3
16.9
ICBO
(13.5)
V
V
V
A
A
W
C
C
Test Conditions
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Symbol
Unit
External Dimensions TO220F (full-mold)
8.4
Symbol
(Ta = 25C)
Ratings
Unit
2SA1488 2SA1488A
A
100max
100max
60
80
V
A
100max
60min
80min
V
40min
V
0.5max
15typ
MHz
90typ
pF
0.8
Ratings
2SA1488 2SA1488A
80
60
60
80
6
4
1
25 (Tc = 25C)
150
55 to +150
3.9
Absolute Maximum Ratings (Ta=25C)
j-a t
(VC E = 4 V )
200
Characteristics
125C
100
(C/W)
30C
hFE
hFE
25C
100
Typ
j-a
50
50
20
0.01
0.1
0.5
20
0.02
0.1
IC (A)
10
100
IC (A)
f T IE Characteristics (typ.)
PC Ta Derating
30
10
5
50
100ms
natural air cooling

Silicone grease
Aluminum heatsink
Unit: mm
1m
10
PC (W)
30
1
0.5
Without heatsink
natural air cooling
20
10
0
0.005 0.01
ith
0.05 0.1
0.5
50
VCE (V)
100
fin
10
10
in
15
0.1
0.05
IE (A)
80
20
DC
Typ
IC (A)
fT (MHz)
40
1000
t (ms)
Safe Operating Area (single pulse)

(VCE = 12V)
60
0.7
1
2
0
0
ite
15
100
he
at
si
nk
10
0
50 2
50
2
Without heatsink
25
50
75
Ta (C)
100
125
150
Power Transistor 2SA1567
Test Conditions
VCB = 50V
VEB = 6V
IC = 25mA
VCE = 1V, IC = 6A
IC = 6A, IB = 0.3A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
fT
COB
Ratings
100max
100max
50min
50min
0.35max
40typ
330typ
(Ta=25C)
Unit
A
A
V
10.0
4.2
2.8
3.3
V
MHz
pF
a
b
2.6
VCC
(V)
24
RL
()
4
IC
(A)
6
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
120
1.35
1.35
0.85
IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
120 0.4typ 0.4typ 0.2typ
2.54
(13.5)
0.45
2.54
2.2
a) Part No.
b) Lot No.
(Unit: mm)
B C E
10
0
2
10
100
VCE (V)
0.2
0.4
j-a t
(VC E = 1V )
500
ure
)
se t
emp
era
C (C
ture
ase
)
te m
p e ra
tu re
)
C (C
a
0.6
0.8
1.0
1.2
VBE (V)

(VC E = 1V)
Characteristics
125C
Typ
25C
100
j-a
100
(C/W)
hFE
30C
hFE
0
0
1000 3000
IB (mA)

500
25
12
0
4
1A
5mA
3
(Ca
3A
10mA
9A
30
IC = 12A
0.5
6A
rat
20mA
pe
6
tem
40mA
se
1.0
IC (A)
60mA
( VC E = 4 V)
12
100mA
5C
0mA
15
VCE (sat) (V)
IC (A)
10
VCE (sat)IB Characteristics (typ.)

1.5
I
20B =
0m
A
12
C0.5
16.9
Symbol
Unit
V
V
V
A
A
W
C
C
8.4
Ratings
50
50
6
12
3
35 (Tc = 25C)
150
55 to +150
3.9
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
0.8
Absolute Maximum Ratings (Ta = 25C)
0.5
50
50
30
0.02
30
0.02
0.1
10
0.1
IC (A)
0.3

(VCE = 12V)
1000
35
10
natural air cooling

Silicone grease
Aluminum heatsink
Unit: mm
30
0m
DC
10
Typ
100
PC Ta Derating
30
10
ite
100
150
1
50
0 2
2
nk
20
10
si
Without heatsink
natural air cooling
at
0.5
he
PC (W)
20
fin
in
30
ith
IC (A)
fT (MHz)
10
t (ms)
1m
40
IC (A)
50
10
10
50 50 2
0.1
0
0.05 0.1
IE (A)
12
0.05
3
10
50
VCE (V)
100
2
0
0
Without heatsink
25
50
75
100
125
150
Ta (C)
81
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
VFEC
fT
COB
Ratings
100max
60max
60min
50min
0.35max
2.5max
40typ
330typ
(Ta=25C)
Unit
A
mA
V

10.0
V
V
MHz
pF
a
b
RL
()
4
IC
(A)
6
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
120
IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
120 0.4typ 0.4typ 0.2typ
2.54
0.45
2.54
2.2
a) Part No.
b) Lot No.
B C E

I
20 B =
0m
A
12
10
VCE (sat) IB Characteristics (typ.)
( VC E = 1 V)
12
150
100mA
10
1.0
0
7 10
100
VCE (V)

300
0.2
0.4
125C
)
tu re
p e ra
s e te
m
C (C
a
25
30
1.0
1.2
j-a t
Characteristics
30C
(C/W)
j-a
hFE
10
10
0.8
25C
100
hFE
(VC E = 1V )
300
Typ
0.6
VBE (V)
100
re)
ure
1000 3000
IB (mA)
(VC E = 1V)
atu
rat
12
per
pe
10mA
tem
1A
C (C
ase
0.5
20mA
3A
tem
9A
6A
se
40mA
(Ca
8
IC = 12A
5C
60mA
IC (A)
VCE (sat) (V)
IC (A)
(Unit : mm)
1.4
mA
C0.5
2.6
1.35
1.35
0.85

VCC
(V)
24
4.2
2.8
3.3
16.9
Test Conditions
VCB = 60V
VEB = 6V
IC = 25mA
VCE = 1V, IC = 6A
IC = 6A, IB = 0.3A
IECO = 10A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz
(13.5)
Symbol
Unit
V
V
V
A
A
W
C
C
8.4
Ratings
60
60
6
12
3
35 (Tc=25C)
150
55 to +150
0.8
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
3.9
0.5
2
0.02
0.1
IC (A)
2
0.02
10
12
10
12
IC (A)

(VCE = 12V)
50
0.1
0.3
10
10
DC
0m
natural air cooling

Silicone grease
Aluminum heatsink
Unit: mm
30
m
10
ite
10
50 50 2
0.1
0
0.05 0.1
IE (A)
10
0.05
3
10
50
VCE (V)
100
2
0
15
nk
20
si
150
at
Without heatsink
natural air cooling
he
PC (W)
20
fin
in
30
ith
IC (A)
fT (MHz)
1000
35
0.5
82
100
PC Ta Derating
30
Typ
10
t (ms)
1m
40
100
10
02
Without heatsink
25
50
75
Ta (C)
100
125
150
External Dimensions FM100 (T03PF)

0.8 0.2
15.6 0.2
V
MHz
pF
3.30.2
a
b
* Rank: O (50 to 100), P (70 to 140), Y(90 to 180)

VCC
(V)
40
RL
()
10
IC
(A)
4
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
400
5.50.2
3.450.2
3.0
ICBO
IEBO
V(BR) CEO
hFE *
VCE (sat)
fT
COB
(Ta=25C)
Unit
A
A
V
Ratings
10max
10max
120min
50min
0.5max
20typ
300typ
5.5
Test Conditions
VCB = 120V
VEB = 6V
IC = 50mA
VCE = 4V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz
3.3
Symbol
1.6
Unit
V
V
V
A
A
W
C
C
9.50.2
Ratings
120
120
6
8
3
75 (Tc=25C)
150
55 to +150
1.75
16.2
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
23.0 0.3
0.8
2.15
1.05
5.450.1
IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
400 0.14typ 1.40typ 0.21typ
+0.2
0.1
5.450.1
1.5
4.4
1.5
+0.2
0.65
3.35 0.1
a) Part No.
b) Lot No.
(Unit : mm)

A
100m
75mA
0.2
0.4
1.0
(VC E = 4V)
200
tu re
atu
p e ra
e te
m
C (C
as
1.0
1.5
VBE (V)
30
0.5
IB (mA)
VCE (V)
re)
re)
atu
per
125
4A
2A
0.6
0.8
j-a t
(VC E = 4V )
300
Characteristics
125C
Typ
25C
hFE
hFE
100
100
50
30C
(C/W )
j -a
IC = 8A
IB=10mA
per
tem
se
se t
em
25mA
IC (A)
50mA
VCE (sat) (V)
IC (A)
(Ca
C (C
a
50
( VC E = 4 V)
m
50
0m
25
0.5
50
30
0.02
0.1
0.5 1
30
0.02
5 8
0.2
0.1
IC (A)
0.5
10
100
IC (A)
(VCE = 12V)
30
PC Ta Derating
80
20
10
10
Typ
1000 2000
t (ms)
DC
10
60
0m
W
it
20
te
40
he
at
si
nk
PC (W)
ni
IC (A)
fi
in
fT (MHz)
10
0.5
20
Wit h ou t h e a t sin k
n a t u ra l a ir c oolin g
0
0.02
5 8
0.05 0.1
0.5
IE (A)
5 8
0.1
5
10
50
VCE (V)
100 150
3.5
0
Wit h ou t h e a t sin k
25
50
75
100
125
150
Ta (C)
83
Power Transistor 2SB1622
min
max
100
100
Unit
A
VCB = 200V
VEB = 5V
A
IC = 30mA
200
V
VCE = 4V, IC = 10A
5000
30000
IC = 10A, IB = 10mA
2.5
V
IC = 10A, IB = 10mA
3.0
V
VCE = 12V, IE = 2A
60
MHz
VCB = 10V, f = 1MHz
pF
270
Rank:
O(5000
to
12000),
P(6500
to
20000),
Y(15000
to
30000)
*
ICBO
IEBO
VCEO
hFE*
VCE(sat)
VBE(sat)
fT
COB
3.3 0.2
a
b
1.75 0.15
2.150.15
+0.2
IB1
(mA)
10
VCE (sat) ( V )
IB = 0.3mA
a) Part No.
b) Lot No.
B
(Unit : mm)
VCE (sat) IB Temperature Characteristics (typ.)

125C
75C
25C
30C
IC = 15A
IC = 10A
IC = 5A
0
0.2
10
VCE ( V )
0
0.1
100 200
10
100 200
IB (mA)

(VCE = 4V)
15
IC = 5A
IB (mA)
3.350.2
+0.2
0.65 0.1
15.60.2
1.5 4.4 1.5
IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
10 0.4typ 3.6typ 1.0typ
VCE (sat) ( V )
IC (A)
0.5mA
VBB2
(V)
5
0.8mA
10
VBB1
(V)
10
1.5mA
1.0mA
.0
50mA
15mA
5.0mA
IC
(A)
10
m
A
15
RL
()
4
0.8
1.05 0.1
5.450.1
5.45 0.1
Typical Switching Characteristics

VCC
(V)
40
5.5 0.2
3.45 0.2
3.0
Test Conditions
External Dimensions
23.0 0.3
Symbol
(Ta=25C)
Ratings
typ
16.2
Unit
V
V
V
A
A
W
C
C
0.8
5.5 0.2
Ratings
200
200
5
15
1
85 (Tc=25C)
150
55 to +150
9.5 0.2
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
1.6
3.3

100000
IC = 10A
VCE = 4V
50000
125C
75C
25C
30C
100 200
10
hFE
ton tstg tf (sec)
50C
25C
0C
30C
55C
10
20
tstg
1
tf
0.5
Characteristics
1.0
0.5
0.1
0.5
10
20
10
80
10
0m
60
at
nk
si
5 10
40
30
Without heatsink
natural air cooling
0.1
0.05
3
he
0.5
50
ite
fin
D.
in
IC (A)
70
C.
20
90
ith
W
40
1000 2000
PC Ta Derating
10
Ta = 25C
(single pulse)
m
10
60
100
t (sec)
Safe Operating Area
fT (MHz)
j-a t
ton
0.1
0.2
50
30
IE (A)
20
Ta = 25C
VCC = 40V
IB1 = IB2 = 10mA
80
0.5 1
10
3.0
IC (A)
0.1
10
IC (A)
84
70
ton tstg t f IC Characteristics (typ.)
VCE = 4V
5000
0
0.02
VBE (V)
10000
0.5
0.5
IC (A)
(C/W)
150C
125C
100C
75C
1000
0.2
1000
0.2

50000
5000
50C
25C
0C
30C
55C
IB (mA)
100000
10000
j-a
0
0.2
Ta=150C
125C
100C
75C
PC (W)
hFE
10
IC (A)
VCE (sat) ( V )
typ
2
20
10
Without heatsink
0
10
100
VCE ( V )
500
25
50
75
Ta (C)
100 125 150
Power Transistor 2SC3852
(Ta=25C)
Unit
A
A
V
Ratings
10max
100max
60min
500min
0.5max
15typ
50typ

10.0
4.2
2.8
3.3
C0.5
16.9
V
MHz
pF
a
b
2.6
1.35
1.35
0.85

VCC
(V)
20
RL
()
20
IC
(A)
1.0
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
15
IB2
t on
t stg
tf
(mA) (s)
(s)
(s)
30 0.8typ 3.0typ 1.2typ
2.54
(13.5)
3.9
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
fT
COB
Test Conditions
VCB = 80V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 0.5A
IC = 2A, IB = 50mA
VCE = 12V, IE = 0.2A
VCB = 10V, f = 1MHz
8.4
Symbol
Unit
V
V
V
A
A
W
C
C
Ratings
80
60
6
3
1
25 (Tc=25C)
150
55 to +150
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
0.8
0.45
2.54
2.2
a) Part No.
b) Lot No.
B C E
(Unit : mm)
3
mA
=1
1.0
( VC E = 4 V)
8mA
IB
1.5
0
0.001
0.005 0.01
VCE (V)
0.05 0.1
re )
(C a s
e te
mp
e ra tu
ure
s e te
m
25C
3 0 C
0.5
1.0 1.1
VBE (V)

(VCE=4V)
2000
tu re
rat
0.5 1
IB (A)
(C a
C
125
2A
IC =1A
p e ra
pe
1
3A
0.5mA
0
tem
0.5
1mA
se
(Ca
2mA
IC (A)
VCE (sat) (V)
IC (A)
3mA
5mA
2
j-a t
(VC E = 4V )
2000
Characteristics
125C
1000
25C
500
30C
j-a
500
(C/W)
Typ
hFE
hFE
1000
100
0.01
0.1
0.5
100
0.01
0.1
IC (A)
10
100
PC Ta Derating
30
10
in
ts
a
he
0.5
ite
fin
in
PC (W)
ith
IC (A)
20
DC
10
10 ms
0m
s
1m
20
Typ
VCB = 10V
IE = 2A
1000
t (ms)

(VCE = 12V)
fT (MHz)
0.5
IC (A)
30
0.5
10
10
Without heatsink
natural air cooling
0.1
0
0.005 0.01
0.05 0.1
IE (A)
0.5 1
0.05
3
Without heatsink
10
50
VCE (V)
100
50
100
150
Ta (C)
85
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
fT
COB
(Ta=25C)
Unit
A
A
V
Ratings
10max
10max
50min
300 to 1600
0.5max
24typ
150typ

10.0
4.2
2.8
3.3
C0.5
V
MHz
pF
16.9
Test Conditions
VCB = 100V
VEB = 15V
IC = 25mA
VCE = 4V, IC = 1A
IC = 5A, IB = 0.1A
VCB = 12V, IE = 0.5A
VCB = 10V, f = 1MHz
Symbol
Unit
V
V
V
A
A
W
C
C
8.4
a
b
2.6
1.35
1.35
0.85

VCC
(V)
20
RL
()
4
IC
(A)
5
IB1
(A)
0.1
IB2
(A)
0.1
t on
(s)
0.5typ
t stg
(s)
2.0typ
tf
(s)
0.5typ
2.54
(13.5)
Ratings
100
50
15
10
3
35 (Tc=25C)
150
55 to +150
3.9
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
0.8
0.45
2.54
2.2
a) Part No.
b) Lot No.
B C E
(Unit: mm)
10
IB = 35mA
30mA
( VC E = 4 V)
10
1.5
0
0.002
0.1
)
ure
re)
rat
tu re
atu
p e ra
s e te
m
tem
se
C (C
a
0.5
1.0
1.2
VBE (V)

(VC E = 4V)
per
pe
0
0
IB (A)
C (
Ca
30
0.01
VCE (V)
1000
5A
3A
IC = 1A
25
5mA
e t
em
10A
0
0
as
4
0.5
(C
10mA
5C
15mA
1.0
12
20mA
IC (A)
VCE (sat) (V)
IC (A)
25mA
j-a t
(VC E = 4V )
1000
Characteristics
25C
hFE
30
j-a
hFE
500
(C/W)
125C
Typ
500
0.5
100
0.02
0.1
0.5
10
100
0.02
0.1
0.5
IC (A)
10
0.3
1
10
IC (A)
100
PC Ta Derating
40
30
1m
10
ite
he
150
10
50
10
VCE (V)
100
2
0
15
0 2
1
50 50 2 00 10
0 2
nk
10
Without heatsink
natural air cooling
si
at
0.5
0.2
3
fin
PC (W)
20
in
IC (A)
ith
DC
fT (MHz)
30
IE (A)
86
0.5
0
0.05 0.1
10
0m
10
natural air cooling

Silicone grease
Aluminum heatsink
Unit: mm
10
Typ
20
1000
t (ms)

(VCE = 12V)
30
Without heatsink
25
50
75
Ta (C)
100
125
150
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
VFEC
fT
COB
(Ta=25C)
Unit
A
mA
V
Ratings
100max
60max
60min
50min
0.35max
2.5max
24typ
180typ

10.0
V
V
MHz
pF
a
b
RL
()
4
IC
(A)
6
VBB1
(V)
10
VBB2
(V)
5
IB1
(A)
0.12
C0.5
2.6
1.35
1.35
0.85

VCC
(V)
24
4.2
2.8
3.3
16.9
Test Conditions
VCB = 60V
VEB = 6V
IC = 25mA
VCE = 1V, IC = 6A
IC = 6A, IB = 1.3A
VECO = 10A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz
2.54
IB2
t on
t stg
tf
(A)
(s)
(s)
(s)
0.12 0.6typ 1.4typ 0.4typ
(13.5)
Symbol
(Ta=25C)
Unit
V
V
V
A
A
W
C
C
8.4
Ratings
60
60
6
12
3
35 (Tc=25C)
150
55 to +150
0.8
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
3.9
0.45
2.54
2.2
a) Part No.
b) Lot No.
B C E
(Unit: mm)

mA
0
15
( VC E = 1 V)
12
100mA
10
1.0
0.1
VCE (V)
50
C
25 C
0
3
10
10
5
3
0.02
10 12
0.1
IC (A)
10 12
0.2
1
10
tu re
p e ra
40
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
10
DC
30
20
ite
he
at
si
0.5
10
Without heatsink
natural air cooling
0.1
5 10 12
0.05
3
10
50
VCE (V)
100
2
0
nk
10
fin
in
PC (W)
ith
IC (A)
0m
fT (MHz)
20
10
10
Typ
1000
PC Ta Derating
30
1m
e te
m
100
t (ms)

(VCE = 12V)
IE (A)
(C a s
0.5
IC (A)
0.5
3 0 C
j-a
hFE
50
0
0.05 0.1
rat
Characteristics
100
30
1.0 1.1
0.5
125
100
5C
j-a t
(VCE = 1V)
400
Typ
0.1
VBE (V)

(VCE = 1V)
400
5
3
0.02
12
IB (A)
hFE
re)
ure
0
0.005 0.01
6A
3A
IC = 1A
9A
(C/W)
atu
pe
4
12A
IB = 10mA
per
tem
20mA
0.5
tem
C (C
ase
40mA
25
VCE (sat) (V)
se
60mA
IC (A)
1.3
(Ca
10
IC (A)
20
0m
12
150
15
0
2
1
50 50 2 00 10
02
Without heatsink
25
50
75
100
125
150
Ta (C)
87

10.0
V
V
MHz
pF
a
b
RL
()
16.7
IC
(A)
3
VBB1
(V)
10
VBB2
(V)
5
IB1
(A)
0.3
C0.5
2.6
1.35
1.35
0.85

VCC
(V)
50
4.2
2.8
3.3
16.9
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
COB
(Ta=25C)
Unit
A
A
V
Ratings
100max
100max
120min
70 to 220
0.5max
1.2max
30typ
110typ
(13.5)
Test Conditions
VCB = 200V
VEB = 8V
IC = 50mA
VCE = 4V, IC = 3A
IC = 3A, IB = 0.3A
IC = 3A, IB = 0.3A
VCE = 12V, IE = 0.5A
VCB = 10V, f = 1MHz
8.4
Symbol
Unit
V
V
V
A
A
W
C
C
0.8
Ratings
200
120
8
7 (pulse 14)
3
30 (Tc=25C)
150
55 to +150
3.9
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2.54
IB2
t on
t stg
tf
(A)
(s)
(s)
(s)
0.6 0.5max 3max 0.5max
0.45
2.54
2.2
a) Part No.
b) Lot No.
B C E
(Unit: mm)

7
mA
200
5
( VC E = 4 V)
0mA
15
6
A
100m
0.1
VCE (V)
re )
rat
j-a t
(VCE = 4V)
300
ra tu
atu
pe
e te m
pe
(C a s
3 0 C
0.5
1.0 1.1
VBE (V)

(VCE = 4V)
300
per
tem
0
0
IB (A)
re)
ure
0
0.005 0.01
5A
3A
IC = 1A
0
C (C
a
5C
1
0
se t
em
se
IB =10mA
25
(Ca
20mA
12
IC (A)
60mA
40mA
VCE (sat) (V)
IC (A)
Characteristics
125C
Typ
100
C
30
20
0.01
0.1
0.5
j-a
50
50
20
0.01
5 7
0.1
5 7
0.5
0.2
1
10
20
20
W
0.1
0.1
IE (A)
88
0.05
5
10
50
VCE (V)
100
200
2
0
00
nk
Without heatsink
natural air cooling
si
50 50 2
15
100
at
he
15
10
10
ite
0.5
fin
in
PC (W)
ith
IC (A)
natural air cooling

Silicone grease
Aluminum heatsink
Unit: mm
s
10m
20
30
0
s
30
1000
PC Ta Derating
10
10
Typ
0
0.01
100
t (ms)

(VCE = 12V)
40
0.5
IC (A)
IC (A)
fT (MHz)
(C/W)
hFE
hFE
25C
100
Without heatsink
25
50
75
Ta (C)
100
125
150
Power Transistor 2SD2141
Test Conditions
VCB = 330V
VEB = 6V
IC = 25mA
VCE = 2V, IC = 3A
IC = 4A, IB = 20mA
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat )
Ratings
10max
20max
330 to 430
1500min
1.5max
(Ta=25C)
Unit
A
A
V

10.0
4.2
2.8
3.3
C0.5
16.9
Symbol
Unit
V
V
V
A
A
W
C
C
V
a
b
2.6
0.8
Ratings
38050
38050
6
6 (pulse 10)
1
35 (Tc=25C)
150
55 to +150
3.9
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
8.4
2.54
(13.5)
1.35
1.35
0.85
0.45
2.54
2.2
a) Part No.
b) Lot No.
B C E
(Unit: mm)
150mA
120mA
( VC E = 4 V)
10
A
18m
4mA
0.2 0.5
VCE (V)
10
(VCE = 2V)
10000
5000
ra tu
ure
rat
pe
tem
2.0
2.4
VBE (V)
j-a t
(VCE = 2V)
10000
5000
Typ
3 0 C
C (
Ca
25
1.0
IB (mA)
re )
e)
0
0
50 100 200
e te m
pe
se
(C
C
5
(C a s
1A
12
ur
mp
at
IC = 7A
5A
3A
as
IB = 1mA
er
VCE (sat) (V)
te
A
90m 0mA
6
20m
2mA
IC (A)
IC (A)
10
Characteristics
25
(C/W)
1000
500
5
5
j-a
hFE
hFE
5C
12
1000
500
100
50
0.5
100
50
10
0.02
0.1
0.5
20
0.02
10
0.1
0.5 1.0
IC (A)
10
0.1
10
100
IC (A)
PC Ta Derating
40
20
natural air cooling

Silicone grease
Aluminum heatsink
Unit: mm
10
DC
30
ite
he
PC (W)
20
fin
IC (A)
in
0.5
ith
1
20
W
at
fT (MHz)
1ms
30
s
10m s
0m
10
Typ
1000
t (ms)

(VCE = 12V)
40
si
0
0.01
Without heatsink
natural air cooling
0.05 0.1
0.5 1
IE (A)
0.01
1
150
10
0.05
nk
0.1
10
50 50 2 100
10
50 100
VCE (V)
500
2
0
Without heatsink
25
50
150
100
75
100
125
150
Ta (C)
89
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
(Ta=25C)
Unit
A
A
V
Ratings
10max
10max
60 to 70
700 to 3000
0.15max
1.5max
200min

10.0
4.2
2.8
3.3
C0.5
V
V
mJ
16.9
Test Conditions
VCB = 60V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
L = 10mH, single pulse
8.4
Symbol
Unit
V
V
V
A
A
W
C
C
a
b
2.6
0.8
1.35
1.35
0.85

VCC
(V)
12
RL
()
12
IC
(A)
1
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
30
IB2
(mA)
30
t on
(s)
0.25
t stg
(s)
0.8
tf
(s)
0.35
2.54
(13.5)
Ratings
655
655
6
6 (pulse 10)
1
30 (Tc=25C)
150
55 to +150
3.9
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
0.45
2.54
2.2
a) Part No.
b) Lot No.
B C E
(Unit: mm)

10

20mA
(IC = 1.5A)
0.75
30mA
5
5mA
4
3mA
0.5
IC (A)
VCE (sat) (V)
IC (A)
10mA
6
Ta = 55C
25C
75C
125C
0.25
IB = 1mA
Ta=55C
25C
75C
125C
1
0
10
VCE (V)
50 100
400
0.5
1.0
IB (mA)
(VCE = 1V)
5000
1.5
VBE (V)
j-a t
(VCE = 1V)
5000
Characteristics
1000
500
Ta = 55C
25C
75C
125C
100
100
0.05 0.1
0.5
10
50
30
0.01
0.05 0.1
0.5
IC (A)
10
0.3
10
50 100
PC Ta Derating
20
30
natural air cooling
Silicone grease
Aluminum heatsink
Unit: mm
c
mse
0.5
ec
1ms c
e
10
10
0m
10
D.
at
si
nk
IC (A)
Without heatsink
natural air cooling
he
10
0.5
ite
15
0
100 150
1
00 2
2
50 5
02
fin
in
20
ith
25
se
(T
10
ms
5
Typ
15
500 1000
t (ms)

(VCE = 1V)
25
20
IC (A)
30
0.5
PC (W)
50
30
0.01
j-a
hFE
hFE
500
fT (MHz)
(C/W)
Typ
1000
Without heatsink
0
0.01
0.1
0.05 0.1
0.5 1
IE (A)
90
5 10
10
VCE (V)
50
100
50
100
Ta (C)
150
Tj
Tstg
ICBO
IEBO
VCEO
hFE
VCE (sat)
VBE (sat)
Test Conditions
VCB=200V
VEB=6V
IC=50mA
VCE=2V, IC=6A
IC=6A, IB=6mA
IC=6A, IB=6mA
Ratings
100max
10max
150min
2000min
1.5max
2.0max
(Ta=25C)
Unit
A
mA
V

10.0
4.2
2.8
3.3
C0.5
V
V
16.9
Symbol
8.4
Unit
V
V
V
A
A
a
b
2.6
C
C
1.35
1.35
0.85
2.54
2.54
(13.5)
PC
Ratings
200
150
6
8
1
35 (Tc=25C)
2 (Ta=25C, No Fin)
150
55 to +150
0.8
Symbol
VCBO
VCEO
VEBO
IC
IB
3.9
0.45
2.2
B C E
a) Part No.
b) Lot No.
(Unit: mm)
91
Power Transistor FP812
ICBO
IEBO
VCEO
hFE
VCE (sat)
(Ta=25C)
Unit
A
A
V
Ratings
10max
10max
120min
70min
0.3max

10.0
a
b

VCC
(V)
12
RL
()
4
IC
(A)
3
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
30
4.2
2.8
3.3
C0.5
16.9
Test Conditions
VCB = 120V
VEB = 6V
IC = 50mA
VCE = 4V, IC = 3A
IC = 3A, IB = 0.3A
2.6
IB2
(mA)
30
t on
(s)
2.5
t stg
(s)
0.4
tf
(s)
0.6
1.35
1.35
0.85
2.54
(13.5)
Symbol
Unit
V
V
V
A
A
W
C
C
8.4
Ratings
120
120
6
8 (pulse 12)
3
35 (Tc=25C)
150
55 to +150
3.9
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
0.8
0.45
2.54
2.2
a) Part No.
b) Lot No.
B C E
(Unit: mm)

8
00
mA
0m
VCE (sat) I B Characteristics (typ.)

100mA
0m
5
1
75mA
VCE (sat) (A)
IC (A)
4
25mA
2
Ic = 1A
IB = 10mA
IC (A)
Ic = 5A
50mA
(VBE = 4V)
8
Ic = 3A
0
5
10
4
Tc = 40C
25C
75C
125C
50 100
VCE (V)
500 1000 2000
0.5
IB (mA)

(VCE = 4V)
500
1.0
1.5
VBE (V)
j-a t
(VCE = 4V)
500
Characteristics
50
)
100
75C
25C
100
j-a
hFE
hFE
Typ
(C/W)
Tc = 125C
55C
50
30
0.01
30
0.01
0.5 1
5 8
NO
0.05 0.1
0.5
IC (A)
5 8
12
10
0.1
0.05
0.0002 0.001
0.01
0.1
se
c
(T
20
natural air cooling

Without heatsink
nk
100
si
10
20
at
0.5
he
20
ite
PC (W)
fin
C)
in
ith
=2
30
W
IC (A)
100
natural air cooling

Silicone grease
Aluminum heatsink
Unit: mm
c
se
c
m
se
0m
10
fT (MHz)
10
PC Ta Derating
1m
10
D.
20
10
40
Typ
Tc = 25C
t (sec)

(VCE = 12V)
30
25
1
0.5
IC (A)
Fin
=
(Ta
Single Pulese
50
0.05 0.1
10
5
10
02
Without heatsink
0
0.01
0.05 0.1
0.5
IE (A)
92
10
0.1
3
10
50
VCE (V)
100 150
50
100
Ta (C)
150
Power Transistor MN611S
C
C
VCB=105V
VEB=6V
IC=50mA
VCE=1V, IC=1A
IC=1.2A, IB=12mA
I FEC=6A
L=10mA
max
115
800
0.08
1.25
10
10
125
1500
0.12
1.5
105
400
Unit
A
A
V
V
V
mJ
45
4.440.2
10.20.3
(1.4)
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
ES/B
min
+0.3
Test Conditions
1.30.2
1.6
b
+0.2
(1.5)
Tj
Tstg
Symbol
External Dimensions TO220S
(Ta=25C)
Ratings
typ

VCC
(V)
12
RL
()
12
VBB1
(V)
10
VBB2
(V)
5
IC
(A)
1
+0.2
0.86 0.1
0.40.1
1.20.2
tf
IB2
ton
tstg
(mA) (s) (s) (s)
30 0.2typ 5.7typ 0.4typ
IB1
(mA)
30
0.1 0.1
1.270.2
+0.3
PC
Unit
V
V
V
A
A
10.0 0.5
Ratings
11510
11510
6
6 (pulse 10)
1
50 (Tc=25C)
1.2 (Ta=25C, No Fin)
150
55 to +150
3.0 0.5
Symbol
VCBO
VCEO
VEBO
IC
IB
8.60.3
2.540.5
2.540.5
a) Part No.
b) Lot No.

(Ta = 25C)
(Unit: mm)

(Ta = 25C)
0.75
30mA
20mA
VCE (sat) (V)
IC (A)
IC = 2A
10mA
5mA
4
3
3mA
0.5
IC = 1.2A
0.25
2
IB = 1mA
IC = 0.5A
0
0
10
VCE (V)
100
1000
IB (mA)
VCE (sat) IB Temperature Characteristics (typ.) IC VBE Temperature Characteristics (typ.)

(IC = 1.2A)
0.75
IFEC VFEC Temperature Characteristics (typ.)
(VCE = 1V)
7
6
Ta = 150C
125C
75C
25C
55C
0.5
Ta = 150C
125C
75C
25C
55C
0.25
4
3
100
1
0
0
0.5
IB (mA)
typ
10
Ta = 150C
125C
75C
25C
55C
30
0.01
0.1
Ic (A)
j-c j-a t
Characteristics (Single pulse)
tstg
Ta = 25C
VCC = 12V
IB1 = IB2 = 30mA
tf
ton
0.1
10
j-a
FR4 (70 100 1.6mm) Use substrate
PT Ta Derating
(Ta = 25C)
20
Ic (A)
Safe Operating Area (Single pulse)
(Tc = 25C)
1.5
10
Ic (A)
50
1.0
(VCE = 1V)
5000
hFE
hFE
0.1
0.5
VFEC (V)
100
30
0.01
60
10
50
j-c
1
PC (W)
40
IC (A)
(C/W)
1000
100
j-c j-a
1.5
ton tstg tf (sec)
(Ta = 25C)
(VCE = 1V)
5000
1000
1.0
VBE (V)
10
1000
Ta = 150C
125C
75C
25C
55C
0
10
IFEC (A)
IC (A)
VCE (sat) (V)
PT =50s
PT =500s
PT =1ms
PT =10ms
30
20
0.1
0.001
Without heatsink
0.01
0.1
t (s)
10
10
0.1
1
10
VCE (V)
100 200
25
50
75
100
Ta (C)
125
150
93
Power Transistor MN638S
Test Conditions
VCB=330V
VEB=6V
IC=25mA
VCE=2V, IC=3A
IC=4A, IB=20mA
4.440.2
10.20.3
1.30.2
a
+0.3
ICBO
IEBO
V(BR) CEO
hFE
VCE (sat)
(Ta=25C)
Unit
A
mA
V
Ratings
10max
20max
330 to 430
1500min
1.5max
1.6
b
+0.2
(1.5)
Symbol
(1.4)
Unit
V
V
V
A
A
W
C
C
10.0 0.5
Ratings
38050
38050
6
6 (pulse 10)
1
60 (Tc=25C)
150
55 to +150
0.10.1
1.270.2
3.0 0.5
+0.3
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
8.60.3
+0.2
0.40.1
0.86 0.1
1.20.2
2.540.5
2.540.5
a) Part No.
b) Lot No.
(Unit: mm)
150mA
120mA
A
18m
4mA
0.2 0.5
VCE (V)
10
(VCE = 2V)
10000
5000
Typ
hFE
hFE
5C
12
1000
500
100
50
0.5
IC (A)
94
1000
500
25
C
5C
100
50
0.1
10
20
0.02
0.1
0.5 1.0
IC (A)
ra tu
re )
e)
ur
at
25
(C a s
1.0
2.0
2.4
VBE (V)

(VCE = 2V)
10000
5000
10
0.02
0
0
50 100 200
IB (mA)
ure
er
se
(C
C
C (
Ca
5
12
10
j-c
j-a t
Characteristics
100
j-c j-a (C/W)
rat
mp
pe
1A
e te m
pe
te
5A
3 0 C
IC = 7A
3A
as
IB=1mA
tem
A
90m 0mA
6
IC (A)
20m
2mA
IC (A)
(VBE =4V)
10
VCE (sat) (V)
10
VCE (sat) I B Characteristics (typ.)
j-a
10
j-c
0.1
0.001
0.01
0.1
t (s)
10
Surface-mount Power Transistor SSD103
Test Conditions
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
VCB = 60V, I E = 0A
VEB = 6V, IC = 0A
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
I FEC = 6A
L = 10mH
min
60
400
65
800
0.11
1.25
max
10
10
70
1500
0.15
1.5
80
External Dimensions SOP8
Unit
0.70.2
A
A
V
5.4Max
8
0 to 10
5
a
b
V
V
mJ
6.20.3
A
A
W
C
C
Symbol
(Ta=25C)
Ratings
typ
0 to 0.1
4
+0.15
1.270.25
0.42 0.05
+0.15
0.17 0.05
(drain heatsink copper foil area 2525mm)

5.00.2
1.50.2
*1: FR4 70mm100mm 1.6mm
0.50.2
Unit
V
V
V
4.40.2
Symbol
Ratings
VCBO
655
655
VCEO
VEBO
6
IC
6
IC (pulse) 10 (Pw 1mS, Duty 25%)
10
IB
1.5 *1
PC
Tj
150
Tstg
55 to +150
4.7Max
a) Part No.
b) Corporate mark
c) Lot No.
d) Control No.
(Unit: mm)
VCE (sat) I C Temperature Characteristics (typ.)

7
30mA
(VCE = 1V)
6
IC/IB = 100
20mA
0.75
5
10mA
5mA
3mA
Ta = 55C
25C
75C
125C
0.25
Ta = 125C
75C
25C
55C
3
2
IB = 1mA
1
0
0.5
IC (A)
IC (A)
VCE (sat) (V)
1
0
0
0.01
0.1
VCE (V)
10
0.5
1.5
(VCE = 1V)
2000
1.0
VBE (V)
IC (A)
tstg
ton tstg tf (S)
1000
hFE
500
Ta = 125C
75C
25C
55C
100
VCC = 12V
IB1 = IB2 = 30mA
1
0.5
tf
ton
0.1
50
0.01
0.1
10
IC (A)
Safe Operating Area
IC (A)
(Single pulse)
20
0.5m
10
s
s
10m
IC (A)
5, 6, 7, 8
1m
1
0.5
natural air cooling
Without heatsink
2, 3, 4
0.1
1
10
50
100
VCE (V)
95
Surface-mount Power Transistor Array SDA03
External Dimensions SMD-16A
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
50
IB2
(mA)
50
t on
(s)
0.4
t stg
(s)
1.75
a
b
Pin 1
tf
(s)
0.22
20.0max
0.2
19.56
1.40.2
IC
(A)
1
+0.15
0.3 0.05
4.0max
RL
()
12
+0.15
0.75 0.05
16

VCC
(V)
12
2.540.25
0.890.15
0.25
6.8max
ICBO
IEBO
VCEO
hFE
VCE (sat)
(Ta=25C)
Unit
A
A
V
Ratings
10max
10max
60min
100min
0.4max
6.30.2
8.00.5
Test Conditions
VCB = 60V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 2A
IC = 2A, IB = 0.1A
3.60.2
Symbol
1.00.3
Unit
V
V
V
A
A
W
C
C
0 to 0.15
Ratings
60
60
6
6 (pulse 12)
1
3 (No Fin)
150
55 to +150
9.80.3
Symbol
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
3.00.2
a) Part No.
b) Lot No.
(Unit: mm)
IC VCE Characteristics
6
VCE (sat) IC Temperature Characteristics (typ.)

100mA
200mA
VCE (sat) (V)
20mA
10mA
Ta = 150C
75C
25C
55C
IC (A)
30mA
(VCE = 4V)
6
IC / IB = 20
50mA
IC (A)
Ta = 150C
75C
25C
55C
IB = 5mA
1
0
0
0.05
0.1
10
hFE IC Temperature Characteristics
hFE
500
Ta = 150C
75C
25C
55C
30
0.01
0.1
10
VCC = 12V
IB1 = IB2 = 50mA
0.5
tf
j-a t
(Ta = 25C)
10
5
tstg
0.1
0.05
0.5 0.1
0.5
IC (A)
10
0.3
0.001
0.01
0.1
PT Ta Derating
20
t (s)
IC (A)
1.5
ton
1
j-a (C/W)
ton tstg tf (sec)
VCE = 4V
1.0
50
50
0.5
VBE (V)
ton tstg t f IC Characteristics
1000
100
IC (A)
VCE (V)
1m
10
10
Without heatsink
PT (W)
IC (A)
20
16
15
14
13
12
11
10
0.5
1
natural air cooling

Without heatsink
0.1
3
10
50
VCE (V)
96
100
50
100
Ta (C)
150
Surface-mount Power Transistor Array SDA04
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
50
IB2
(mA)
50
t on
(s)
0.4
t stg
(s)
1.75
tf
(s)
0.22
a
b
Pin 1
20.0max
0.2
19.56
1.40.2
IC
(A)
1
+0.15
0.3 0.05
4.0max
RL
()
12
+0.15
0.75 0.05
16

VCC
(V)
12
2.540.25
0.890.15
0.25
3.60.2
ICBO
IEBO
VCEO
hFE
VCE (sat)
(Ta=25C)
Unit
A
A
V
Ratings
10max
10max
60min
100min
0.4max
6.8max
Test Conditions
VCB = 60V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 2A
IC = 2A, IB = 0.1A
6.30.2
8.00.5
Symbol
1.00.3
Unit
V
V
V
A
A
W
C
C
0 to 0.15
Ratings
60
60
6
6 (pulse 12)
1
2.5 (No Fin)
150
55 to +150
9.80.3
Symbol
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
3.00.2
a) Part No.
b) Lot No.
(Unit: mm)
6

100mA
200mA
VCE (sat) (V)
20mA
10mA
Ta = 150C
75C
25C
55C
IC (A)
30mA
(VCE = 4V)
6
IC / IB = 20
50mA
IC (A)
Ta = 150C
75C
25C
55C
IB = 5mA
1
0
0
0.05
0.1
10
hFE
500
Ta = 150C
75C
25C
55C
30
0.01
0.1
10
VCC = 12V
IB1 = IB2 = 50mA
0.5
tf
j-a t

(Ta = 25C)
0.05
0.5 0.1
0.5
10
5
tstg
0.1
IC (A)
10
0.3
0.001
0.01
0.1
PT Ta Derating
20
t (s)
IC (A)
1.5
ton
1
j-a (C/W)
ton tstg tf (sec)
VCE = 4V
1.0
50
50
0.5
VBE (V)
1000
100
IC (A)
VCE (V)
1m
10
10
20
Without heatsink
PT (W)
IC (A)
16
15
10
0.5
1
natural air cooling

Without heatsink
0.1
3
10
50
VCE (V)
100
50
100
150
Ta (C)
97
Surface-mount Power Transistor Array SDC09
2.540.25
0.890.15
0.25
+0.15
0.75 0.05
16
V
V
mJ
6.8max
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
(Ta=25C)
Unit
A
A
V
Ratings
10max
10max
60 to 70
400 to 1500
0.15max
1.5max
80min
6.30.2
8.00.5
Test Conditions
VCB = 60V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
9.80.3
Symbol
Unit
V
V
V
A
A
W
C
C
3.00.2
Ratings
655
655
6
6 (pulse 10 *)
1
2.8
150
55 to +150
0 to 0.15
Symbol
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
1.00.3
+0.15
0.3 0.05
b
Pin 1
20.0max
0.2
19.56
3.60.2
1.40.2
4.0max
* PW 100s, Duty 1%
a) Part No.
b) Lot No.
(Unit: mm)

(VCE = 4V)
0.7
IC /IB =100
0.6
20mA
0.5
IC (A)
10mA
4
5mA
3
3mA
1mA
1
0
0.3
3
2
1
0.1
0
0.0001
Ta=150C
100C
75C
25C
55C
4
Ta=150C
100C
75C
25C
55C
0.4
0.2
IC (A)
IB =
30mA
VCE (sat) (V)
0.001
0.01
0.1
0.2
0.4
IC (A)
VCE (V)
5000
0.6
0.8
1.0
1.2
VBE (V)
j-a t

(Use substrate 42311m)
10
10
ton tstg tf (sec)
VCE=1V
Ta=150C
100C
75C
25C
55C
100
50
0.01
0.1
10
tstg
VCC =12V
IB1= IB2 =30mA
ton
tf
0.5
1.0
1.5
2.0
2.5
3.0
0.05
0.1
0.5
ms
50 50 1.6mm
Use substrate
1
PT (W)
1ms
1
100
10
5
10
t (ms)
PT Ta Derating
Ta=25C
0.5
IC (A)
IC (A)
0.1
0.1
IC (A)
20
j-a (C/W)
hFE
1000
4 13 15 16
42311.0mm
Use substrate
14
10ms
11
1
0.1
0.05
0.5
10
VCE (V)
98
50 100
0
50
50
Ta (C)
100
150
9 10 12
1000
Power Transistor Array SLA8004
PT
Tj
Tstg
Symbol
V
V
V
A
A
W
W
C
C
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Test Conditions
Ratings
Test Conditions
Unit
Ratings
310.2
A
mA
V
VCB = 55V
100max
VEB = 6V
60max
IC = 25mA
55min
VCE = 1V, I C = 3A
80min
I C = 6A, IB = 0.3A 0.35max
IFEC = 10A
2.5max
VCB = 60V
100max
VEB = 6V
60max
IC = 25mA
60min
VCE = 1V, IC = 3A 150min
IC = 6A, IB = 0.3A 0.35max
IFEC = 10A
2.5max
External Dimensions SLA 12pin (LF817)
3.20.15 3.8
24.40.2
4.80.2
1.70.1
16.40.2
3.20.15
V
V
a
1.20.15
50.5
VCBO
VCEO
VEBO
IC
IB
Unit
PNP
2.450.2
(Root dimension)
4 (R1)
R-end
+0.2
+0.2
(3)
NPN
PNP
60
55
60
55
6
6
12
12
3
3
5 (Tc=25C, No Fin)
40 (Tc=25C)
150
55 to +150
(Ta=25C)
NPN
160.2
Symbol
12.90.2
Ratings
9.90.2
0.85 0.1
1.450.15
0.55 0.1
40.7
11 P2.540.1= (27.94)
(Root dimension)
31.30.2

(PNP)
12
10
1 2 3 4 5 6 7 8 9 10 11 12
IC (A)
40mA
(Unit: mm)
40mA
6
10mA
20mA
20mA
IB = 10mA
2
0
(VC E = 1V) (PNP)
300
VCE (V)
VCE (V)
(VCE = 1V) (N PN )
400
Typ
Typ
100
hFE
hFE
100
10
50
10
2
0.02
0.1
5
3
0.02
10
12
IC (A)

125C
0.1
10 12

(VCE = 1V) (N PN )
400
C
125
25C
30C
100
IC (A)
(VC E = 1V) (PNP)
300
C
25 C
0
3
hFE
hFE
100
10
50
10
2
0.02
0.1
5
3
0.02
10
12
IC (A)
0.1
10 12
IC (A)

(PNP)
1.4
(N PN )
1.3
1.0
1.0
R2
IC = 12A
9A
6A
3A
0.5
VCE (sat) (V)
VCE (sat) (V)
a) Part No.
b) Lot No.
100mA
60mA
IC (A)
m
50
60mA
A
0m
100mA
20
I
20 B =
0m
A
10
(N PN )
12
m
150
R1: 500 Typ.

R2: 500 Typ.
0.5
1A
12A
IC = 1A
0
7 10
100
IB (mA)
1000 3000
0
5
10
3A
100
6A
3
6
7
10
12
9A
R1
1
1000
11
3000
IB (mA)
99
Surface-mount Power Transistor Array SPF0001
Tj
Tstg
(Ta=25C)
Unit
V
V
V
A
A
W
C
C
Symbol
Test Conditions
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
VCB = 105V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.2A, IB = 12mA
I FEC = 6A
L = 10mH
(Ta=25C)
Ratings
typ
min
105
400
max
10
10
125
1500
0.12
1.5
115
800
0.08
1.25
45
External Dimensions SPF 20pin
Unit
14.740.2
A
A
V
13.040.2
+0.1
20
1.0 0.05
Fin
thickness
11
V
V
mJ
b
10
1
+0.15
1.270.25
0.4 0.05
+0.15
0.250.05
2.50.2
* Use glass epoxy substrate (FR4) 70mm 100mm1.6mm
(11.43)
4-( 0.8)
10
(VCE = 1V)
F1
20
(IC = 1.2A)
0.5
F2
(2.4)
(4.7)
(3.05)
1000
10.50.3
Ratings
11510
11510
6
6 (pulse 10)
1
2.5 (Ta = 25C)
150
55 to +150
7.50.2
Symbol
VCBO
VCEO
VEBO
IC
IB
PT *
20.2
a) Part No.
b) Lot No.
11
(13.54)
(Unit: mm)
500
VCE (sat) (V)
150C
hFE
25C
100
55C
50
10
0.1
0.5
0.25
150C
25C
55C
0
0.001
56
0.01
0.1
IB (A)
IC (A)
IC VEC Temperature Characteristics (typ.)

(VCE = 1V)
10
IC (A)
IC (A)
4
6
150C
25C
55C
150C
25C
55C
1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.8
1.0
1.2
1.4
thermal resistance characteristics

Transient
(82361mm at the time of mounting the
100
20
recommended pattern of the glass epoxy board)
2 circuits operate
10
0.
5m
1m
j-a
10
j-a j-f
(C/W)
IC (A)
0.6
VBE (V)
VEC (V)
1 circuits
operate
2 circuits operate
1 circuits operate
F1
F2
j-f
0.1
18,19
0.1
10
VCE (V)
100
100
200
0.01
0.00001 0.0001 0.001
0.01
0.1
Power time (s)
10
100
12,13
Power Transistor Array STA315A
VFEC
RB
RBE
Es/b
* PW 1ms, Duty 25%
External Dimensions STA3 (LF400A)

20.20.2
V
V
V
k
mJ
b
a
0.50.15
7 2.54=17.780.25
C1.50.5

VCC
(V)
12

30m
IC
(A)
1
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
5
IB2
(mA)
0
ton
(s)
1.0
2
B
3
C
4
B
5
C
6
B
7
C
8
E
a) Part No.
b) Lot No.
(Unit: mm)
VCE (sat) IC Temperature Characteristics
(IC = 0.5A)
0.5
1
E
tf
(s)
2.5
tstg
(s)
8.5
VCE (sat) IB Temperature Characteristics
12
RL
()
12
(2.54)
1.00.25
4.00.2
VCE (sat)
(Ta=25C)
Unit
A
mA
V
9.00.2
ICBO
IEBO
VCEO
hFE
Ratings
10max
2.7max
31 to 41
400min
0.2max
0.5max
2.5max
800120
2.00.4
50min
1.20.2
Tj
Tstg
Test Conditions
VCB = 30V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 0.7A
IC = 0.5A, IB = 5mA
IC = 1A, IB = 5mA
IFEC = 2A
0.50.15
PT
Symbol
Unit
V
V
V
A
mA
W
W
C
C
2.30.2
Ratings
355
365
6
2 (pulse 3*)
30
3 (Ta=25C)
13.5 (Tc=25C)
150
55 to +150
11.30.2
Symbol
VCBO
VCEO
VEBO
IC
IB
4.70.5
3
IC/IB = 100
8mA
5mA
IC (A)
3mA
2mA
IB = 1mA
10
500
Ta = 125C
75C
25C
40C
VCC = 12V
IB = 5mA
IB = 0A
tstg
tf
ton
1
0.5
j-a t
10
5
1
0
0.5
1.0
1.5
2.0
10
100
1000
t (ms)
PT Ta Derating
(per element)
Characteristics
Ic (A)
Single pulse
IC (A)
0.5
20
10
0.1
0.5
50
ton tstg tf (S)
1000
0.1
IC (A)
(VCE = 4V)
3000
50
0.01
400
IB (mA)
100
100
(C/W)
VCE (V)
hFE
0
0
Ta = 125C
75C
25C
40C
j-a
Ta = 125C
75C
25C
40C
0.25
VCE (sat) (V)
VCE (sat) (V)
20
1m
10
s
5
PT (W)
IC (A)
1
0.5
ith
10
inf
ini
te
he
at
sin
RB
RBE
1
Without heatsink
natural air cooling
Withou
t heat
0.1
1
10
VCE (V)
50
sink
50
100
150
Ta (C)
101
ICBO
IEBO
VCEO
hFE
VCE (sat)
Es/b
(Ta=25C)
Unit
A
A
V
Ratings
10max
10max
355
500min
0.5max
150min
External Dimensions STA3 (LF400A)

20.20.2
V
mJ
9.00.2
Test Conditions
VCB = 30V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 0.5A
IC = 1A, IB = 5mA
0.50.15
RL
()
12
IC
(A)
1
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
5
72.54=17.780.25
IB2
(mA)
5
ton
(s)
1.3
tstg
(s)
4.7
tf
(s)
1.2
C1.50.5
2
C
3
B
4
E
5
E
6
B
7
C
4.00.2
VCC
(V)
12
(2.54)
1.00.25
1.20.2
Tj
Tstg
Symbol
0.50.15
PT
Unit
V
V
V
A
A
W
W
C
C
2.30.2
Ratings
355
355
6
3
1
2.5 (Ta=25C)
12 (Tc=25C)
150
55 to +150
11.30.2
Symbol
VCBO
VCEO
VEBO
IC
IB
4.70.5
a) Part No.
b) Lot No.
(Unit: mm)

15m
A
10
m
A
8m
6m
VCE = 4V
4mA
2mA
IB =1mA
Ta = 125C
75C
25C
55C
0
0.002
0.01
0.05 0.1
VCE (V)
20
0.5
500
Ta = 125C
75C
25C
55C
tstg
VCE = 12V
IB1 = IB2 = 5mA
10
j-a t
Characteristics
tf
Single pulse
10
1
0.5
ton
0.3
0.05
0.1
0.5
IC (A)
0.1
0.1
10
Ic (A)
100
1000
t (ms)
PT Ta Derating
(per element)
1.5
20
0.5
0.5
1.0
VBE (V)
(C/W)
ton tstg tf (S)
1000
10
0.4
(VCE = 4V)
5000
0.05 0.1
Ta = 55C
25C
75C
125C
IB (A)
100
0.01
j-a
0.5
IC (A)
IC (A)
VCE (sat) (V)
3mA
hFE
5mA
(IC = 1A)
15
1m
10
ith
(T
c=
25
at
10
102
ci
rc
ui
op
er
50
at
t heat
VCE (V)
(A
ts
Withou
nk
ll
0.5
0.2
si
he
PT (W)
IC (A)
ite
10
0m
DC
in
fin
10
sink (A
ll circui
e)
ts oper
50
ate)
100
Ta (C)
150
5000
0.2
2.3
9.0
0.2
0.2
V
V
V
k
mJ
b
a
0.25

30m
IC
(A)
1
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
5
IB2
(mA)
0
ton
(s)
1.0
0.3
0.05
9 2.54=22.86
0.5
C1.5
tstg
(s)
8.5
tf
(s)
2.5
a) Part No.
b) Lot No.
(Unit: mm)
VCE (sat) IC Temperature Characteristics
(IC = 0.5A)
0.5
0.3
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E
12
RL
()
12
0.5

VCC
(V)
12
(2.54)
0.15
1.0
0.2
25%
0.2
25.25
0.2
VFEC
RB
RBE
Es/b
External Dimensions STA4 (LF412)
4.0
VCE (sat)
(Ta=25C)
Unit
A
mA
V
0.15
* PW 1ms, Duty
ICBO
IEBO
VCEO
hFE
Ratings
10max
2.7max
31 to 41
400min
0.2max
0.5max
2.5max
800120
2.00.4
50min
1.2
Tj
Tstg
Test Conditions
VCB = 30V
VEB = 6V
IC = 25mA
VCE = 4V, IC = 0.7A
IC = 0.5A, IB = 5mA
IC = 1A, IB = 5mA
IFEC = 2A
0.5
PT
Symbol
Unit
V
V
V
A
mA
W
W
C
C
11.3
Ratings
355
365
6
2 (pulse 3*)
30
4 (Ta = 25C)
18 (Tc = 25C)
150
55 to +150
0.5
Symbol
VCBO
VCEO
VEBO
IC
IB
3.5
3
IC /IB = 100
8mA
5mA
IC (A)
3mA
2mA
IB = 1mA
10
500
Ta = 125C
75C
25C
40C
VCC = 12V
IB = 5mA
IB = 0A
tstg
j-a t
Characteristics
Single pulse
tf
ton
1
0.5
1
0
0.5
1.0
1.5
2.0
10
100
Ic (A)
1000
t (ms)
PT Ta Derating
(per element)
10
IC (A)
0.5
20
10
0.1
0.5
50
ton tstg tf (S)
1000
0.1
IC (A)
tontstgtf IC Characteristics (typ.)
(VCE = 4V)
3000
50
0.01
400
IB (mA)
100
100
(C/W)
VCE (V)
hFE
0
0
Ta = 125C
75C
25C
40C
j-a
Ta = 125C
75C
25C
40C
0.25
VCE (sat) (V)
VCE (sat) (V)
20
1m
10
s
3
he
10
si
at
nk
PT (W)
ite
0.5
fin
in
IC (A)
ith
W
RB
RBE
1
Without heatsink
natural air cooling
With
out h
0.1
1
10
VCE (V)
50
10
eatsin
50
100
150
Ta (C)
103
Power Transistor Array STA460C
0.2
b
a
V
V
mJ
0.25
(2.54)
0.15
1.0
0.5
0.3
0.3
0.05
0.5
0.5
C1.5
0.2
92.54 = 22.86
0.2
200
0.2
25.25
A
A
V
9.0
60
1500
0.09
1.25
50
700
Unit
0.2
VCB = 50V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
max
10
10
70
3000
0.15
1.5
0.2
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
min
2.3
Test Conditions
4.0
C
C
Symbol
0.15
Tj
Tstg
(Ta=25C)
Ratings
typ
1.2
PT
Unit
V
V
V
A
A
11.3
Ratings
6010
6010
6
6
10 (Pw 1ms, Du 50%)
3.2 (Ta = 25C)
18 (Tc = 25C)
150
40 to +15
0.5
Symbol
VCBO
VCEO
VEBO
IC
ICP
3.5
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E
a) Part No.
b) Lot No.
(Unit: mm)

typ
75C 25C
1000
10m
5mA
500
500
3mA
3
2
100
1mA
1
0
1000
55C
h FE
30
0.01
VCE (V)
0.25
50
0.05 0.1
0.5 1
30
0.01
10
0.05 0.1
IC (A)
Ta = 55C
25C
75C
125C
0.5
100
50
0
(IC /IB = 100)
0.75
Ta = 125C
VCE (sat) (V)
IC (A)
mA
20
IB
=3
(VCE = 1V)
5000
h FE
0m
hFE IC Temperature Characteristics (typ.) VCE (sat) IC Temperature Characteristics (typ.)
(VCE = 1V)
5000
10
0.5 1
0
0.01
10
0.05 0.1
0.5 1
IC (A)
0.75
j-a PW
(VCE = 1V)
5 10
IC (A)
Characteristics
20
10
5
j-a (C/W)
IC (A)
0.25
IC = 3A
1.5A
0.5A
0
1
10
50 100
500
75C
Ta =
125
25C
55C
VCE (sat) (V)
5
0.5
0.5
IB (mA)
1
0.5
0.1
0.05
0.1
1.5
1.0
0.5 1
VBE (V)
5 10
50 100
500 1000 2000
PW (ms)

PT Ta Derating
Safe Operating Area

20
20
10
10m
1m
ith
W
15
ms
0.5
Silicone grease used

Vertical self-excitation
IC (A)
he
k
sin
at
PT (W)
te
ini
inf
10
0.5
5
Without heatsink
Single pulse
0.1 Without heatsink

0
55
Ta=25C
50
Ta (C)
104
100
150
0.05
0.5
10
VCE (V)
50 100
External Dimensions STA4 (LF400B)

0.2
25.25
V
V
mJ
0.2
9.0
0.2
(Ta=25C)
Unit
A
A
V
0.2
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
Ratings
10max
10max
60 to 70
400 to 1500
0.15max
1.5max
80min
2.3
Test Conditions
VCB = 60V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.5A, IB = 15mA
IFEC = 6A
(2.54)
0.15
0.25
0.5
1.0
0.05
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
30
IB2
(mA)
30
ton
(s)
0.2
t stg
(s)
3.9
0.5
C1.5
tf
(s)
0.2
1 2 3 4
B C E
0.2
IC
(A)
1
0.2
RL
()
12
4.0
VCC
(V)
12
0.15
9 2.54=22.86
1.2
Tj
Tstg
Symbol
0.5
PT
Unit
V
V
V
A
A
W
W
C
C
11.3
Ratings
655
655
6
6 (pulse 10)
1
3.2 (Ta = 25C)
18 (Tc = 25C)
150
55 to +150
0.5
Symbol
VCBO
VCEO
VEBO
IC
IB
4.7
7 8 9 10
B C E
a) Part No.
b) Lot No.
(Unit: mm)

7
(VCE = 1V)
0.75
30mA
IC / IB = 100
20mA
5
5mA
Ta = 55C
25C
75C
125C
3mA
0.25
0
0.01
0.1
10
Ta = 125C
75C
25C
55C
Characteristics
VCC = 12V
IB1 = IB2 = 30mA
Single pulse
0.5
1
0.5
tf
10
0.1
ton
0.1
0.1
j-a t
(C/W)
tontstgtf (S)
hFE
500
0.05
0.1
Ic (A)
IC (A)
1.5
10
tstg
1000
1.0
VBE (V)
(VCE = 1V)
2000
50
0.01
0.5
IC (A)
10
100
2000
t (ms)
PT Ta Derating
20
20
0.5m
10
ith
W
15
PT (W)
0.5
nk
si
at
he
ite
fin
in
10m
1m
IC (A)
2
1
VCE (V)
100
Ta = 125C
75C
25C
55C
IB = 1mA
1
0
0.5
j-a
IC (A)
IC (A)
VCE (sat) (V)
10mA
10
5
Withou
t heat
Without heatsink
natural air cooling
0.1
1
10
VCE (V)
50
100
sink
50
4
100
150
Ta (C)
105
External Dimensions STA4 (LF400B)

0.2
25.25
V
V
mJ
0.2
9.0
0.2
(Ta=25C)
Unit
A
A
V
0.2
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
Ratings
10max
10max
105 to 125
400 to 1500
0.12max
1.5max
45min
2.3
Test Conditions
VCB = 105V
VEB = 6V
IC = 50mA
VCE = 1V, IC = 1A
IC = 1.2A, IB = 12mA
IFEC = 6A
(2.54)
0.15
0.25
0.5
1.0
0.05
VBB1
(V)
10
VBB2
(V)
5
IB1
(mA)
30
IB2
(mA)
30
t on
(s)
0.2
t stg
(s)
5.7
0.5
C1.5
tf
(s)
0.4
1 2 3 4
B C E
0.2
IC
(A)
1
0.2
RL
()
12
4.0
VCC
(V)
12
0.15
9 2.54=22.86
1.2
Tj
Tstg
Symbol
0.5
PT
Unit
V
V
V
A
A
W
W
C
C
11.3
Ratings
11510
11510
6
6 (pulse 10)
1
3.2 (Ta=250C)
18 (Tc=25C)
150
55 to +150
0.5
Symbol
VCBO
VCEO
VEBO
IC
IB
4.7
7 8 9 10
B C E
a) Part No.
b) Lot No.
(Unit: mm)
20mA
10mA
5mA
4
3
3mA
Ta = 55C
25C
75C
150C
0.25
4
3
2
IB = 1mA
1
0
0
0.01
0.1
(VCE = 4V)
2000
tstg
1
0.5
1.0
ton
0
10
Characteristics
Single
transistor
operated
10
5
1
0.1
0.0001 0.001
0.01
0.1
10
t (s)
PT Ta Derating
(Tc = 25C)
20
0.75
Dual
transistor
operated
Single pulse
Ic (A)
IC (A)
1.5
0.5
VCC = 12V
IB1 = IB2 = 30mA
tf
0.1
j-a t
100
50
(C/W)
Ta = 150C
75C
25C
55C
j-a
tontstgtf (S)
500
hFE
0.5
VBE (V)
10
1000
0.1
50
30
0.01
IC (A)
VCE (V)
100
Ta = 150C
75C
25C
55C
5
0.5
IC (A)
30mA
VCE (sat) (V)
(VCE = 1V)
7
I C /IB = 100
IC (A)
0.75
15
PT (W)
nk
si
at
he
0.25
ite
fin
in
0.5
Ta = 150C
75C
25C
55C
ith
W
VCE (sat) (V)
IC = 1.2A
10
5
Withou
t heat
10
100
IB (mA)
106
1000
sink
50
100
Ta (C)
150
100
1000
0.2
V
V
mJ
(2.54)
0.15
0.25
0.5
1.0
0.05
0.5
0.5
C1.5
0.2
9 2.54= (22.86)
(Root dimension)
0.2
80
0.2
9.0
60
400
25.25
A
A
V
0.2
65
800
0.09
1.25
10
10
70
1500
0.15
1.5
Unit
0.2
VCB=60V
VEB=6V
IC=50mA
VCE=1V, IC=1A
IC=1.5A, IB=15mA
IFEC=6A
L=10mH
max
2.3
ICBO
IEBO
VCEO
hFE
VCE (sat)
VFEC
Es/b
min
4.0
C
C
Test Conditions
External Dimensions STA4
0.15
Tj
Tstg
Symbol
(Ta=25C)
Ratings
typ
1.2
PC
Unit
V
V
V
A
A
11.3
Ratings
655
655
6
6 (pulse 10)
1
20 (Tc=25C)
4 (Ta=25C)
150
55 to +150
0.5
Symbol
VCBO
VCEO
VEBO
IC
IB
3.5
1 2 3 4 5 6 7 8 9 10
E B C B C B C B C E
a) Part No.
b) Lot No.
(Unit: mm)

7
30mA
(VCE = 1V)
6
I C /IB = 100
20mA
0.75
IC (A)
5mA
Ta= 55C
25C
75C
125C
3mA
0.25
1
0
0
0.01
0.1
VCE (V)
10
0.5
1.0
(VCE = 1V)
2000
1.5
VBE (V)
IC (A)
tstg
tontstgtf (S)
1000
hFE
500
Ta = 125C
75C
25C
55C
100
VCC = 12V
IB1 = IB2 = 30mA
1
0.5
tf
ton
0.1
50
0.01
0.1
10
Ic (A)
IC (A)
PT Ta Derating
20
20
0.5m
10
ith
15
fin
in
s
1m
s
10m
2
4
Witho
ut he
Without heatsink
natural air cooling
0.1
1
10
VCE (V)
50
100
k
sin
10
0.5
at
he
PT (W)
ite
IC (A)
Ta = 125C
75C
25C
55C
IB = 1mA
1
0
0.5
IC (A)
VCE (sat) (V)
10mA
8
10
atsin
50
100
150
Ta (C)
107
MOS FET 2SK3710 (under development)
Features
Applications
ON resistance 0.0060 max.

Built-in G-S bidirectional Zener diode
Trench MOS structure
Power steering motor

Various motors
Replaces mechanical relays
External Dimensions
108
130
400
150
55 to +150
Unit
V
V
A
A
W
mJ
C
C
Symbol
Test Conditions
V(BR) DSS
IGSS
IDSS
VTH
RDS (ON)
VSD
t rr
Ciss
Coss
Crss
ID = 100A
VGS = 20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 250A
VGS = 10V, ID = 35A
ISD = 50A
ISD = 25A, di/dt = 50A/s
VDS = 10V
VGS = 10V
f = 1.0MHz
min
Ratings
typ
max
60
2
5.0
0.9
110
9400
1400
1100
10
100
4
6.0
1.5
Unit
V
A
A
V
m
V
ns
pF
pF
pF
(1.4)
+0.3
9.10.3
+0.2
0.1 0.1
+0.2
0.86 0.1
3 0.5
+0.3
1.20.2
2.540.1
2.540.1
10.2 0.3
0.1
0.4
(5.4)
1.40.2
Ratings
60
20
70
140
(Ta=25C)
(1.3)
Symbol
VDSS
VGSS
ID
ID (pulse)
PD
EAS
Tch
Tstg
1.30.2
2.60.2
(1.5)
4.440.2
10.5 0.5
(0.45)
(5)
TO220S
Details of the back (S=2/1)
(Unit: mm)
MOS FET 2SK3711
External Dimensions
Unit
V
V
A
A
W
mJ
C
C
130
To be defined
150
55 to +150
* 1: PW 100s, duty cycle 1%

* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
RG = 50
* Contact your sales rep for the details of warranty
at Tch = 175C
ID VDS Characteristics (typ.)
Test Conditions
V(BR) DSS
IGSS
IDSS
VTH
RDS (ON)
VSD
t rr
Ciss
Coss
Crss
ID = 100A
VGS = +20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 250A
VGS = 10V, ID = 35A
ISD = 50A
70
60
60
10V
8V
6V
40
VGS = 5V
30
10
0.5
(3)
(Unit: mm)
Re (yfs) ID Characteristics (typ.)
0.6
0.4
(VDS = 10V)
Tc = 55C
25C
150C
ID = 70A
10
35A
1
0
10
15
20
10
VGS (V)
70
ID (A)
j-c Pw
VGS = 10V
12.0
6.0
Characteristics
10
4.0
3.0
2.0
j-c (C/W)
RDS (ON) (m)
10.0
5.0
8.0
6.0
4.0
0.1
2.0
0
10
20
30
40
50
60
0
60 50
70
ID (A)
50
100
0.01
Tc (C)
(Ta = 25C)
60
Ciss
50
100
40
10
100
t)
(O
t)
ms
80
60
20
t)
ho
(1s
Tc = 150C
25C
55C
ho
10
IC (A)
N)
RD
(With infinite heatsink)
120
0
s(
1s
ED
IT
M
LI
ho
Coss
100
30
10
140
50
1s
1000
ID (pulse) max
s(
IDR (A)
10000
(Ta = 25C)
500
1m
VGS = 0V
f = 1MHz
Safe Operating Area (single pulse) PD TC Characteristics
(Ta = 25C)
70
0.1
Pw (sec)
Capacitance VDS Characteristics IDR VSD Characteristics

50000
0.01
0.0001 0.001
150
PD (W)
1.0
Capacitance (pF)
(2)
a) Part No.
b) Lot No.
1. Gate
2. Drain
3. Source
500
RDS (ON) TC Characteristics (typ.) ID = 35A
VGS = 10V
7.0
RDS (ON) (m)
1.4
5.450.1
(1)
0.2
0.65 0.1
15.80.2
1.0
VGS (V)
RDS (ON) I D Characteristics (typ.) Ta = 25C
5.450.1
VDS VGS Characteristics (typ.)
Tc = 150C
100C
50C
25C
0C
40C
+0.2
+0.2
1.05 0.1
100
VDS (V)
5.0
0.9
70
7800
1250
990
2
3
0.8
30
10
V
A
A
V
m
V
ns
pF
pF
pF
10
100
4
6.0
1.2
(VDS = 10V)
40
20
Unit
max
60
50
20
min
Ratings
typ
VDS = 10V
VGS = 10V
f = 1.0MHz
80
ID (A)
ID (A)
Symbol
70
50
(Ta=25C)
ID VGS Characteristics (typ.)
(Ta = 25C)
80
2.00.1
3.20.1
Re (yfs) (S)
Ratings
60
20
70
140
VDS (V)
Symbol
VDSS
VGSS
ID
ID (pulse)
PD
EAS
Tch
Tstg
4.80.2
20.0 min
4.0 max
15.60.4
13.6
9.6
TO-3P
1.8
5.00.2

Various motors
2.0
Applications

19.90.3
4.0
Features
40
Crss
10
100
20
0
0
10
20
30
VDS (V)
40
50
0.2
0.4
0.6
0.8
VSD (V)
1.0
1.2
1.4
0.1
0.1
0
1
10
VDS (V)
100
50
100
150
Tc (C)
109
External Dimensions
60
To be defined
150
55 to +150
Unit
V
V
A
A
W
mJ
C
C
* Contact your sales rep for the details of warranty

at Tch = 175C
110
Symbol
Test Conditions
V(BR) DSS
IGSS
IDSS
VTH
RDS (ON)
VSD
t rr
Ciss
Coss
Crss
ID = 100A
VGS = 20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 1mA
VGS = 10V, ID = 40A
ISD = 50A
VDS = 10V
VGS = 10V
f = 1.0MHz
min
Ratings
typ
max
60
1
4.0
0.9
To be defined
10600
1600
1300
10
100
2
5.0
1.5
Unit
V
A
A
V
m
V
ns
pF
pF
pF
9.10.3
+0.2
0.1 0.1
+0.2
0.86 0.1
2.540.1
2.540.1
10.20.3
3 0.5
+0.3
1.20.2
0.1
0.4
(5.4)
1.40.2
Ratings
60
20
80
160
(Ta=25C)
1.30.2
2.60.2
(1.3)
Symbol
VDSS
VGSS
ID
ID (pulse)
PD
EAS
Tch *
Tstg
(1.5)
4.440.2
(1.4)
(5)
TO220S
+0.3

Various motors
10.5 0.5
Applications

(0.45)
Features
(Unit: mm)
MOS FET 2SK3800
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 35A
VDD = 20V, RG = 22
RL = 0.57, VGS = 10V
ISD = 50A, VGS = 0V
70
60
60
50
50
1.2
2.540.1
30
20
20
10
10
(VDS = 10V)
500
0.5
1.0
1.5
2.0
1.0
2.0
VDS (V)
Ta = 25C
VGS = 10V
ID = 70A
0.2
4.0
5.0
6.0
Tc = 55C
25C
150C
35A
1
0
10
15
20
j-c
t Characteristics (Single pulse)
(ID = 35A)
30
2.0
15
VDS
8.0
6.0
4.0
20
10
VDS (V)
3.0
70
Dynamic I/O Characteristics (typ.)
10
j-c (C/W)
4.0
10
ID (A)
10.0
5.0
VGS
VDD = 8V
12V
14V
16V
24V
10
0.1
2.0
10
20
30
40
50
60
0
60 50
70
ID (A)
50
100
150
(Ta = 25C)
50000
0.01
0.00001 0.0001 0.001 0.01
Tc (C)
PT
N)
IC (A)
IDR (A)
IT
50
40
Ta = 150C
25C
55C
Coss
20
10
PT
ED
Ciss
1000
100
LI
PT
(O
RD
PT
=1
=1
30
VDS (V)
40
50
0
150
70
00
s
=1
60
0m
50
40
30
20
10
0
20
100
80
0
s
10
10
50
90
=1
Crss
(Ta = 25C)
100
30
10
Qg (nC)
500
60
10000
70
VGS = 0V
f = 1MHz
0
0.1
t (s)
Capacitance VDS Characteristics (typ.) IDR VSD Characteristics (typ.)
100
10
VGS (V)
ID = 35A
VGS = 10V
12.0
1.0
Capacitance (pF)
7.0
RDS (ON) TC Characteristics (typ.)
RDS (ON) (m)
RDS (ON) (m)
6.0
0.4
VGS (V)
RDS (ON) I D Characteristics (typ.)

7.0
3.0
0.6
PD (W)
Ta = 150C
25C
55C
(Ta = 25C)
Re (yfs) (S)
VGS = 4.5V
(5.4)
(Unit: mm)
100
40
0.1
0.4
2.540.1
10.20.3
1.0
VDS (V)
30
ID (A)
ID (A)
10V
5.5V
5.0V
+0.2
0.1 0.1
+0.3
+0.2
0.86 0.1
0.8
40
2.60.2
1.20.2
(VDS = 10V)
1.30.2
3 0.5
6.0
1.56
62.5
70
10
100
4.0
3.0
50
5.0
5100
1200
860
100
100
300
130
0.9
110
2.0
30
(5)
V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
ns
C/W
C/W
4.440.2
(1.4)
40
+0.3
ID = 100A, VGS = 0V
VGS = 15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 35A
VGS = 10V, ID = 35A
Unit
max
VGS (V)
RG = 50
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr
R th (ch-c)
R th (ch-a)
min
1.40.2

Test Conditions
(1.3)
80 (Tc=25C)
400
150
40 to +150
Symbol
(Ta=25C)
Ratings
typ
9.10.3
Unit
V
V
A
A
W
mJ
C
C
10.5 0.5
Ratings
40
20
70
140
(1.5)
Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*2
Tch
Tstg
(0.45)
0.2
0.4
0.6
0.8
VSD (V)
1.0
1.2
1.4
0.1
0.1
0
1
10
VDS (V)
100
20
40
60
80 100 120 140 160
Tc (C)
111
MOS FET 2SK3801
100 (Tc=25C)
400
150
40 to +150

RG = 50
Symbol
Test Conditions
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr
R th (ch-c)
R th (ch-a)
ID = 100A, VGS = 0V
VGS = 15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 35A
VGS = 10V, ID = 35A
min
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 35A
VDD = 20V, RG = 22
RL = 0.57, VGS = 10V
ISD = 50A, VGS = 0V
70
60
60
V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
ns
C/W
C/W
10
100
4.0
3.0
50
5.0
5100
1200
860
100
100
300
130
0.9
100
2.0
30
6.0
1.5
1.25
35.71
30
20
20
10
10
0.5
1.0
1.5
2.0
Ta = 150C
25C
55C
1.0
2.0
(1)
(2)
VDS (V)
0.4
(3)
4.0
5.0
6.0
7.0
Ta = 25C
VGS = 10V
(VDS = 10V)
1000
ID = 35A
VGS = 10V
10.0
Tc = 55C
25C
150C
100
10
1
5
10
15
20
10
VGS (V)
RDS (ON) TC Characteristics (typ.)
(Unit: mm)
35A
VGS (V)
RDS (ON) I D Characteristics (typ.)

7.0
0.6
0.2
a) Part No.
b) Lot No.
1. Gate
2. Drain
3. Source
(Ta = 25C)
ID = 70A
3.0
1.4
5.450.1
Re (yfs) (S)
VGS = 4.5V
40
0.65 0.1
15.80.2
1.0
VDS (V)
30
ID (A)
ID (A)
40
+0.2
+0.2
1.05 0.1
50
10V
5.5V
5.0V
2.00.1
0.8
50
4.80.2
3.20.1
a
b
5.450.1
(VDS = 10V)
15.60.4
13.6
9.6
Unit
max
40
70
External Dimensions TO-3P
(Ta=25C)
Ratings
typ
1.8
5.00.2
Unit
V
V
A
A
W
mJ
C
C
2.0
Ratings
40
20
70
140
19.90.3
4.0
Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*1
Tch
Tstg
20.0 min
4.0 max
j-c
70
ID (A)
Pw Characteristics (Single pulse) Dynamic I/O Characteristics (typ.)

(ID = 35A)
30
10
6.0
15
VDS
2.0
4.0
20
10
VGS
VDD = 8V
12V
14V
16V
24V
10
0.1
VGS (V)
3.0
6.0
VDS (V)
4.0
j-c (C/W)
RDS (ON) (m)
RDS (ON) (m)
8.0
5.0
2.0
1.0
0
10
20
30
40
50
60
0
60 50
70
ID (A)
50
100
150
Tc (C)
(Ta = 25C)
10
100
ED
N)
Ciss
IDR (A)
PT
IT
50
40
Ta = 150C
25C
55C
30
Coss
20
10
M
LI
PT
(O
RD
PT
=1
20
30
VDS (V)
112
40
50
0
150
=1
100
00
=1
m
0m s
s
80
60
40
1
20
0
10
100
120
10
0
50
=1
Crss
100
(Ta = 25C)
PT
60
10000
100
Qg (nC)
500
IC (A)
Capacitance (pF)
70
VGS = 0V
f = 1MHz
1000
0
0.1
Pw (s)
Capacitance VDS Characteristics (typ.) IDR VSD Characteristics (typ.)

50000
0.01
0.00001 0.0001 0.001 0.01
PD (W)
0.2
0.4
0.6
0.8
VSD (V)
1.0
1.2
1.4
0.1
0.1
0
1
10
VDS (V)
100
20
40
60
80 100 120 140 160
Tc (C)

RG = 50
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr
ID = 100A, VGS = 0V
VGS = 15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 42A
VGS = 10V, ID = 42A
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 42A
VDD = 20V, RG = 22
VGS = 10V
ISD = 50A, VGS = 0V
min
max
40
10
100
4.0
2.0
50
2.1
10500
2400
1900
90
230
490
760
0.85
90
3.0
1.2
Unit
V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
ns
4.440.2
10.20.3
1.30.2
1.6
b
(1.5)
Test Conditions
(1.4)
Symbol
(Ta=25C)
Ratings
typ
+0.3
10.0 0.5
100 (Tc=25C)
730
150
55 to +150
Unit
V
V
A
A
W
mJ
C
C
8.60.3
Ratings
40
20
85
170
+0.2
0.10.1
1.270.2
+0.3
Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*2
Tch
Tstg
3.0 0.5
+0.2
0.86 0.1
0.40.1
1.20.2
2.540.5
2.540.5
a) Part No.
b) Lot No.
(Unit: mm)
113
MOS FET 2SK3851
150
280
150
55 to +150

* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped
ID VDS Characteristics
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr
ID = 100A, VGS = 0V
VGS = 20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 42A
VGS = 10V, ID = 42A
min
60
2.0
30
4.0
11500
1500
1100
60
25
370
65
0.87
70
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 42A
VDD 16V
RG = 22
VGS = 10V
ISD = 50A, VGS = 0V
ISD = 50A, di/dt = 100A/S
4.7
1.5
4.80.2
2.00.1
3.20.1
a
b
2
3
+0.2
+0.2
0.65 0.1
1.05 0.1
5.450.1
1.4
5.450.1
15.80.2
(1)
VDS VGS Characteristics

(VDS = 10V)
100
V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
ns
10
100
3.0
2.5
15.60.4
13.6
9.6
Unit
max
(3)
a) Part No.
b) Lot No.
(Unit: mm)
Re (yfs) ID Characteristics
(Ta = 25C)
1.0
(2)
1. Gate
2. Drain
3. Source
(VDS = 10V)
500
10V
80
0.8
80
70
100
40
VGS = 4.0V
30
20
60
Ta = 150C
25C
55C
40
Re (yfs) (S)
ID (A)
50
VDS (V)
4.5V
60
ID (A)
Test Conditions
ID VGS Characteristics
(Ta = 25C)
90
Symbol
External Dimensions TO-3P
(Ta=25C)
Ratings
typ
2.0
Unit
V
V
A
A
W
mJ
C
C
19.90.3
4.0
Ratings
60
20
85
280
20.0 min
4.0 max
Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*2
Tch
Tstg
1.8
5.00.2
0.6
0.4
ID = 85A
0.2
20
55C
25C
150C
10
ID = 42A
10
0
0
0.4
0.8
1.2
1.6
2.0
0
1
VDS (V)
6.0
10 12 14 16 18
VGS (V)
RDS (ON) TC Characteristics
Ta = 25C
VGS = 10V
8.0
VGS = 10V
ID = 25A
j-c t
RDS (ON) (m)
4.0
10
3.0
2.0
1.0
6.0
5.0
4.0
3.0
0.1
2.0
1.0
0
0
10
20
30
40
50
60
70
80
0
100
90
50
ID (A)
50
120
Ta = 150C
25C
55C
IDR (A)
50
PD (W)
Capacitance (pF)
140
60
40
Crss
30
VDS (V)
40
50
60
60
0
20
80
20
10
500
100
40
20
Coss
10
160
70
30
0.01
0.001
PD TC Characteristics
80
Ciss
1000
0.01
0.0001
t (s)
(Ta = 25C)
90
Ta = 25C
VGS = 0V
f = 1MHz
10000
150
Tc (C)

50000
100
0.2 0.4
0.6
0.8
VSD (V)
1.0
1.2 1.4
25
50
75
100
Tc (C)
10
ID (A)
7.0
5.0
114
VGS (V)
RDS (ON) I D Characteristics
RDS (ON) (m)
j-c (C/W)
125
150
0.1
10
50
100
MOS FET FKV460S
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
ID = 25A
VDD = 12V
RL = 0.48
VGS = 10V
ISD = 50A, VGS = 0V
(1.4)
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
1.5
1.30.2
1.6
+0.2
0.10.1
1.270.2
+0.2
0.40.1
0.86 0.1
1.20.2
2.540.5
2.540.5
a) Part No.
b) Lot No.
(Unit: mm)
(VDS = 10V)
(Ta = 25C)
1.0
(VDS = 10V)
500
0.8
Ta = 150C
25C
55C
30
20
0.6
ID = 60A
0.4
0.2
10
10
10
VGS (V)
14
Ta = 25C
VGS = 10V
14
VGS = 10V
ID = 25A
10
8.0
6.0
4.0
j-a t
j-c
10
60
ID (A)
50
12
RDS (ON) (m)
12
20
VGS (V)
10
8.0
6.0
4.0
(C/W)
15
50
10
10A
0
10
j-a
55C
25C
150C
100
25A
j-c
Re (yfs) (S)
VGS = 3.0V
VDS (V)
40
ID (A)
30
VDS (V)
0.1
j-a
FR4 (70 100 1.6mm)
Use substrate
j-c
2.0
2.0
10
20
30
40
50
0
60 50
60
50
100
(Ta = 25C)
VGS = 0V
f = 1MHz
0.01
Crss
(Ta = 25C)
200
ID (pulse) max
100
50
ED
IT
PT
IM
5V
IC (A)
40
30
VGS = 10V
20
10
PT
L
N)
(O
DS
=1
60
50
0m
10
20
VDS (V)
30 35
40
30
20
10
0
0
10
70
=1
10
100
10V
IDR (A)
Coss
0.1
t (s)
(Ta = 25C)
60
Ciss
1000
0.001
Tc (C)

10000
0.01
0.0001
150
PD (W)
ID (A)
Capacitance (pF)
50
20
RDS (ON) (m)
7
2800
1400
600
20
600
250
100
1.0
4.440.2
10.20.3
V
+10
5
100
2.3
1.3
20.0
10V
5.0V
4.0V
40
40
VDS = 10V
f = 1.0MHz
VGS = 0V
70
Unit
max
60
50
ID (A)
ID = 100A, VGS = 0V
VGS = +20V
VGS = 10V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 25A
VGS = 10V, ID = 25A
IGSS
(Ta = 25C)
3.5V
60
V(BR) DSS
Ratings
typ
min
(1.5)
* PW
Test Conditions
+0.3
60 (Tc=25C)
150
55 to +150
100s, duty 1%
Symbol
10.0 0.5
Unit
V
V
A
A
W
C
C
8.60.3
Ratings
40
+20, 10
60
180
+0.3
Symbol
VDSS
VGSS
ID
ID (pulse)*
PD
Tch
Tstg
(Ta=25C)
3.0 0.5
0.2
0.4
0.6
0.8
VSD (V)
1.0
1.2
0.1
0.1
0
1
VDS (V)
10
50
25
50
75
100 125 150
Tc (C)
115
MOS FET FKV660S
160
ID=25A
VDD=12V
RL=0.48
VGS=10V
ISD=50A, VGS=0V
20
4
10
12
VDS (V)
(1.4)
+0.3
(Unit : mm)
ID = 60A
0.6
0.4
0.2
0.010
VGS = 10V
10
100
15
ID (A)
(Ta = 25C)
10000
VGS = 4V
0.015
VGS = 10V
0.010
0
60 50
50
100
Tc (C)
Ciss
1000
Coss
150
Crss
100
0
10
20
30
VDS (V)
180
Ta = 25C
VGS = 0V

(Ta = 25C)
500
ID (pulse) max
160
100
140
ED
IT
IM
ID (A)
IDR (A)
120
100
80
10
DS
L
N)
(O
PT
PT
=1
m
s
0m
s
=1
60
1
40
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD (V)
116
0.1
0.1
10
VGS = 0V
f = 1MHz
ID (A)
IDR VSD Characteristics
20
Capacitance VDS Characteristics

(ID = 25A)
0.020
200
10
VGS (V)
0.005
0.005
100
1
10
Capacitance (pF)
RDS (ON) ()
VGS = 4V
0.015
55C
25C
150C
10A
5
0.025
0.020
(VDS = 10V)
1000
25A
0.030
0.025
10
VDS (V)
0.40.1
a) Part No.
b) Lot No.
0.8

(Ta = 25C)
0.030
+0.2
0.1 0.1
1.20.2
2.540.5
2.540.5
(Ta = 25C)
VGS (V)
VDS (V)
ID (A)
Ta = 150C
100C
50C
25C
0C
55C
0.01
1.6
1.270.2
+0.2
0.86 0.1
1.0
40
1.5
1.4
0.001
14
1.30.2
1.2
0.1
VGS = 3.5V
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
VDS VGS Characteristics

(VDS = 10V)
10
80
(1.5)
11
2500
900
150
50
400
400
300
1.0
100
4V
60
RDS (ON) ()
1.0
20
4.440.2
10.20.3
V
+10
5
100
2.5
VDS=10V
f=1.0MHz
VGS=0V
1000
Unit
max
60
4.5V
100
min
120
ID (A)
ID=100A, VGS=0V
VGS =+20V
VGS =10V
VDS=60V, VGS=0V
VDS=10V, ID=250A
VDS=10V, ID=25A
VGS=10V, ID=25A
IDSS
VTH
Re (yfs)
RDS(ON)
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VSD
10V
6V
140
V(BR)DSS
IGSS
(Ta = 25C)
180
Test Conditions
Re (yfs) (S)
Symbol
( Ta=25C)
Ratings
typ
10.0 0.5
8.60.3
Unit
V
V
A
A
W
C
C
+0.3
Symbol
Ratings
VDSS
60
+20, 10
VGSS
60
ID
180
ID(pulse)
PD
60(Tc=25C)
Tch
150
Tstg
40 to +150
PW 100s, duty 1%
3.0 0.5
100
40
50
100 200
Surface-mount MOS FET Array SDK06
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
52
1.0
1.0
57
1.0
100
2.5
1.8
0.2
0.25
200
120
20
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 1A
VDD 12V
RL = 12
VGS = 5V
RG1 = 50, RG2 = 10k
0.25
0.3
2.0
7.4
3.3
4.2
1.0
ISD = 1A, VGS = 0V
V
A
A
V
S
pF
pF
pF
s
s
s
s
V
1.5
16
0.3
a
b
+0.15
0.05
Pin 1
19.56
a) Part No.
b) Lot No.
(Unit: mm)
0.8
VGS = 4V
VDS = 10V
10
Ta = 150C
VGS = 5V
VGS = 10V
0.6
3
2
RDS (ON) ()
ID (A)
0.1
VGS = 3V
10
12
0.01
14
0.2
ID (A)
Re (yfs) I D Characteristics
0.5
I DR VSD Characteristics
10
10
ID = 1A
VDS = 10V
Re (yfs) (S)
VGS = 4V
typ.
0.4
0.3
VGS = 10V
typ.
0.2
Ta = 55C
25C
150C
0.5
0.1
0.2
0.05 0.1
0
50
100
150
0.5
Ta = 150C
75C
25C
55C
0.2
0.4
ID (A)
Tc (C)
(Tc = 25C)
10
ED
1.2
1.4
(o
m
10
LI
1.0
0
s
1m
IT
n)
S
D
0.8
10
ID (pulse) max
0.6
VSD (V)
15 16
ID (A)
VGS (V)
R DS (ON) TC Characteristics
RDS (ON) ()
25C
0.4
0
0
VDS (V)
50
75C
55C
Ta = 55C
25C
75C
150C
IDR (A)
ID (A)
20.0max
0.2
20
VGS = 4V
+0.15
0.75 0.05
R DS (ON) I D Characteristics
2.540.25
0.890.15
0.25
6.8max
47
3.60.2
ID = 1mA, VGS = 0V
VGS = 20V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A
VGS = 4V, ID = 1.0A
Unit
max
1.40.2
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
min
1.00.3
Test Conditions
6.30.2
8.00.5
40
150
55 to +150
*1 PW 100s, duty 1%
*2 VDD = 12V, L = 10mH, unclamped, RG = 10
Symbol
(Ta=25C)
Ratings
typ
4.0max
3 (Tc=25C, 4 circuits operate)
Unit
V
V
A
A
W
mJ
C
C
9.80.3
Ratings
525
20
3
6
3.00.2
Symbol
VDSS
VGSS
ID
ID (pulse) *1
PT
EAS *2
Tch
Tstg
0 to 0.15
13 14
11 12
10
1
1
0.5
2
0.1
0.5
10
50
VDS (V)
117
ID = 4A
VDD 12V
RL = 3
VGS = 5V
RG = 50
50
80
60
40
1.0
ISD = 6A, VGS = 0V
0.1
Ta = 150C
75C
25C
0C
55C
VGS = 3V
0.01
4
2
0
12
15
0.001
VDS (V)
0.10
25C
0C
6.8max
0.1
0.05 0.1
10
10
ID (A)
(single pulse) (Ta = 25C)
(ID = 4A)
0.20
Ta = 150C
0.10
0.05
500
VDD = 12V constant
RGS = 50
VGS = 5V
75C
0.05
10
RDS (ON) TC Characteristics (typ.) S/W Time W ID Characteristics
(VGS = 4V)
0.15
Ta = 150C
25C
55C
VGS (V)
0.20
RDS (ON) ()
RDS (ON) ()
Ta = 150C
75C
25C
0C
55C
(VDS = 10V)
100
0.2
(VGS = 10V)
0.20
0.6
VGS (V)
0.15
20.0max
(Unit: mm)
Ta = 150C
75C
25C
0C
55C
0.8
Pin 1
a) Part No.
b) Lot No.
0.4
RDS (ON) ()
VDS (V)
ID (A)
ID (A)
VGS = 10V
19.56
(ID = 4A)
1.0
0.2
1.4
1.2
10
+0.15
0.3 0.05

(VDS = 10V)
14
12
16
Re (yfs) (S)
1.5
2.540.25
+0.15
0.75 0.05
3.60.2
1.8
9.0
0.07
0.09
700
300
90
0.890.15
0.25
1.40.2
1.3
5.0
V
nA
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
100
100
2.3
13.0
0.08
0.1
6.30.2
8.00.5
50
VDS = 10V
f = 1.0MHz
VGS = 0V
20
10
Unit
max
4.0max
min
1.00.3
ID = 100A, VGS = 0V
VGS = 20V
VDS = 50V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 4.0A
VGS = 10V, ID = 4.0A
VGS = 4V, ID = 4.0A
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
VGS = 4V
16
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
(Ta = 25C)
18
Test Conditions
0.15
VGS = 4V
0.10
VGS = 10V
0.05
55C
S/W Time (ns)
Symbol
(Ta=25C)
Ratings
typ
0 to 0.15
Ratings
50
20
4.5
9
9.80.3
(Ta=25C)
Unit
V
V
A
A
W
80
mJ
C
150
C
55 to +150
*1 PW 100s, duty 1%
Symbol
VDSS
VGSS
ID
ID (pulse) *1
PT
EAS *2
Tch
Tstg
3.00.2
100
tr
t d (off)
t d (on)
tf
10
10
12
ID (A)
10
0
60 50
12
ID (A)
50
100
5
0.1
150
0.5
Tc (C)
10
ID (A)

Capacitance VDS Characteristics ISD VSD Characteristics (typ.)
(Ta = 25C)
5000
1000
Coss
100
Crss
4 circuits operate
3 circuits operate
2 circuits operate
1 circuits operate
P T (W)
Ciss
Ta = 150C
75C
25C
0C
55C
4
3
2
15
0
1
10
VDS (V)
100
0.3
0.6
0.9
VSD (V)
1.2
1.5
50
100
Ta (C)
150
16
13
10
118
ISD (A)
Capacitance (pF)
VGS = 0V
f = 1MHz
5
0.1
PT Ta Characteristics
14
11
12
10
1.0
5.0
0.15
0.2
400
130
30
VDS=10V
f=1.0MHz
VGS=0V
ID=4A
VDD=12V
RL=3
VGS=5V
RG=50
0.2
0.25
100
300
250
200
1.0
ISD=6A, VGS=0V
Pin 1
19.56
a) Part No.
b) Lot No.
(Unit: mm)
0.30
0.25
VGS=4.5V
RDS (ON) ()
VGS=4V
ID (A)
6
Ta=55C
25C
75C
150C
4
2
0.15
VGS=10V
0.10
1.0
2.0
3.0
4.0
VGS (V)
10
1.0
1.2
50
0.45
ID (A)
ID=4A
0.20
0.05
VDS (V)
0.40
20.0max
VDS=10V
0.2
12
+0.15
0.3 0.05
10
VGS=10V
ID (A)
16
pF
pF
pF
ns
ns
ns
ns
V
16
+0.15
0.75 0.05
1.5
2.540.25
0.890.15
0.25
6.8max
V
A
A
V
S
5
100
2.0
3.60.2
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
120
1.40.2
ID=100A, VGS=0V
VGS=20V
VDS=120V, VGS=0V
VDS=10V, ID=250A
VDS=10V, ID=4A
VGS=10V, ID=4A
VGS=4V, ID=4A
Unit
max
6.30.2
8.00.5
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
min
4.0max
Test Conditions
1.00.3
Symbol
RDS (ON)
*1 PW 100s, duty 1%
(Ta=25C)
Ratings
typ
9.80.3
Unit
V
V
A
A
W
mJ
C
C
3.00.2
Symbol
Ratings
120
VDSS
20
VGSS
6
ID
10
ID (pulse) *1
PT
EAS *2
80
Tch
150
Tstg
55 to +150
0 to 0.15
6
VGS=0V
VGS=4V
VGS=10V
0.20
Ta=55C
25C
75C
150C
1
0.5
0.10
0.1
0.05 0.1
0
50
50
100
150
0.5
3
2
1
0
10
0.2
0.4
ID (A)
Tc (C)
(Ta = 25C)
20
1000
500
ID (pulse) max
10
Ciss
ID (A)
Coss
0
s
1m
10
15
RDS (on) LIMITED
100
16
13
14
11
12
10
10
0m
50
0.8
10
ID (DC) max
VGS =0V
f=1MHz
0.6
VSD (V)
Capacitance (pF)
Ta=150C
75C
25C
55C
IDR (A)
Re (yfs) (S)
RDS (ON) ()
10
0.30
0.5
2
Crss
0.1
10
0
10
20
30
VDS (V)
40
50
10
50
100 200
VDS (V)
119
MOS FET Array SLA5027
j-c
VISO
Tch
Tstg
(Fin to lead terminal) AC1000
mJ
C/W
Vrms
C
C
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
ID = 100A, VGS = 0V
VGS = 20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 8A
VGS = 4V, ID = 8A
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
150
55 to +150
*1 PW 250s, duty 1%
min
Unit
max
60
1.0
6.0
1.5
12.0
0.07
1100
500
170
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 8A
VDD 30V
RL = 3.75
VGS = 5V
RG = 50
0.08
50
250
250
180
1.0
ISD = 10A, VGS = 0V
V
A
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
100
100
2.0
1.5
Ellipse 3.20.15 3.8
31.00.2
3.20.15
24.40.2
4.80.2
1.70.1
0.2
16.4

resins 0.8 max
250
2.08
Test Conditions
8.5max
EAS*2
Symbol
External Dimensions SLA 12pin (LF800)
16.00.2
60 (Tc=25C,4 circuits operate)
(Ta=25C)
Ratings
typ
13.00.2
5 (Ta=25C, 4 circuits operate)
PT
Unit
V
V
A
A
W
W
9.90.2
Ratings
60
20
12
48
a
b
2.7
Symbol
VDSS
VGSS
ID
ID (pulse)*1
9.5min (10.4)
12
Pin 1
+0.2
0.1
0.85
1.20.15
0.55
1.450.15
2.20.7
+0.2
0.1
11P2.540.7 =27.941.0
31.5 max
1 2 3 4 5 6 7 8 9 10 11 12
a) Part No.
b) Lot No.
(Unit: mm)
10
0.1
12
VDS = 10V
10
VGS = 4V
4V
5V
10V
RDS (on) ()
ID (A)
ID (A)
6
VGS = 3V
Ta = 150C
75C
25C
55C
4
2
0.05
VGS = 10V
VDS (V)
0
0.1
VGS (V)
20
30
0.12
10
ID (A)
20
VDS = 10V
VGS = 4V
VGS = 0V
10
0.10
VGS = 10V
0.06
0.02
50
50
100
10
IDR (A)
Re (yfs) (S)
RDS (ON) ()
2
0.4
150
As
VDS (V)
10
ID (A)
s
1
50
0m
Capacitance (pF)
5m
1m
s
10
10
Crss
50
1.2
Coss
10
ID (DC) max
10
500
0.8
VSD (V)
(Ta = 25C)
Ciss
0.4
0.
VGS = 0V
f = 1MHz
ID (pulse) max
S
(o
n)
LI
su
me
M
IT
dV
ED
GS
=4
V li
ne
50
100
0.1
20
2000
120
10
ID (A)
Tc (C)
1000
1
0.5
0.5
0.5
10
VDS (V)
50 100
11
12
MOS FET Array SLA5098 (under development)
PT
Tch
Tstg
Tc=25C,
90 ( All
circuits operate )
150
55 to +150
C
C
* PW 100s, duty 1%
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
ID = 100A, VGS = 0V
VGS = 15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 10A
VGS = 10V, ID = 10A
t rr
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 10A
VDD = 14V
RL = 1.4
VGS = 10V
RG = 50
ISD = 10A, VGS = 0V
ISD = 10A, VGS = 0V
di/dt = 100A/s
min
max
40
10
100
1.5
10
2.5
17
1450
420
260
40
40
200
100
0.85
45
1.2
Unit
V
A
A
V
S
m
pF
pF
pF
ns
ns
ns
ns
V
Ellipse 3.20.1 3.8
31.00.2
3.20.1
24.40.2
4.80.2
1.70.1
0.2
16.4

resins 0.8 max
Without heatsink, Ta=25C,

All circuits operate
Test Conditions
9.90.2
mJ
A
Symbol
(Ta=25C)
Ratings
typ
16.00.2
To be defined
To be defined
13.00.2
Unit
V
V
A
A
8.5max
5(
Ratings
40
20
20
40
a
b
2.7
Symbol
VDSS
VGSS
ID
ID (pulse)*
EAS
IAS
9.5min (10.4)
15
Pin 1
+0.2
+0.2
0.65 0.1
1.20.15
2.20.7
0.55 0.1
+0.2
1.15 0.1
14P2.030.4 = 28.420.8
31.5 max
a) Part No.
b) Lot No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
(Unit: mm)
ns
14
10
15
13
12
11
121
MOS FET Array SMA5113
35 (Tc=25C, All circuits operate, Fin)
Unit
V
V
A
A
W
W
130
7
mJ
A
4 (Ta=25C, All circuits operate, No Fin)
PT
EAS *2
IAS
j-a
31.2
Junction - Ambientare,
Ta=25C, All circuits operate
C/W
j-c
3.57
Junction - Case,
Ta=25C, All circuits operate
C/W
Symbol
Test Conditions
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
ID = 100A, VGS = 0V
VGS = 30V
VDS = 450V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 20V, ID = 3.5A
VGS = 10V, ID = 3.5A
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
Tch
Tstg
C
150
C
55 to +150
*1 PW 100s, duty 1%
*2 VDD = 30V, L = 5mH, IL = 7A, unclamped,
RG = 50
Unit
max
450
V
nA
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
100
100
4.0
2.0
3.5
5.0
0.84
720
150
65
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 3.5A
VDD 200V
RL = 57
VGS = 10V
RG = 50
1.1
25
40
70
50
1.0
ISD = 7A, VGS = 0V
1.5
4.00.2
31.00.2
5V
+0.2
1.20.1
31.5 max
(Including both-side resin burr)
1 2 3 4 5 6 7 8 9 10 11 12
a) Part No.
b) Lot No.
VGS = 10V
VDS = 20V
15
20
1.0
0.5
Ta = 55C
25C
150C
10
+0.2
0.55 0.1
RDS (ON) ID Characteristics
VGS = 4.5V
1.210.15
1.460.15
0.85 0.1
RDS (ON) ()
ID (A)
b
a
1.5
5.5V
10V
2.50.2
30
11 P2.540.1=27.94
ID (A)
min
External Dimensions SMA (LF1000)
(Unit: mm)
(Ta=25C)
Ratings
typ
10.20.2
Ratings
450
30
7
28
2.4
Symbol
VDSS
VGSS
ID
ID (pulse) *1
(10.4)
VDS (V)
10
VGS (V)
2.5
IDR VSD Characteristics
100
7
VDS = 20V
VGS = 10V
ID = 3.5A
VGS = 0V
50
2.0
ID (A)
1.0
IDR (A)
Re (yfs) (S)
RDS (ON) ()
5
1.5
Ta = 55C
25C
150C
10
4
3
2
0.5
1
2
0.05 0.1
0
50
50
100
150
0.5
Tc (C)
0.2
0.4
(Ta = 25C)
50
Ciss
0.6
0.8
1.0
VSD (V)
1000
ID (pulse) max
10
500
VGS = 0V
f = 1MHz
100
ED
IT
IM
)L
10 ID (DC) max
Coss
(o
0
s
1m
ID (A)
Capacitance (pF)
ID (A)
10
RD
10
10
0m
11
0.5
50
Crss
0.1
0.05
20
0
10
20
30
VDS (V)
122
40
50
10
50
VDS (V)
100
500
12
MOS FET Array STA508A
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 4A
VDD 12V
RL = 3
VGS = 5V
RG = 50
ISD = 6A, VGS = 0V
0.2
0.25
1.5
16
0.5
C1.5
1 2 3 4 5 6 7 8 9 10
S G D G D G D G D S
a) Part No.
b) Lot No.
(Unit: mm)
0.30
0.25
VGS = 4.5V
RDS (ON) ()
VGS = 4V
ID (A)
6
Ta = 55C
25C
75C
150C
4
2
0.15
VGS = 10V
0.10
1.0
2.0
3.0
4.0
VGS (V)
10
1.0
1.2
50
0.45
ID (A)
ID = 4A
0.20
0.05
VDS (V)
0.40
0.3
0.05
VDS = 10V
0.3
9 2.54=22.86
12
(2.54)
0.15
0.5
10
VGS = 10V
ID (A)
0.25
1.0
0.2
0.15
0.2
400
130
30
100
300
250
200
1.0
0.2
1.0
5.0
b
a
4.0
5
100
2.0
0.2
0.15
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
V
A
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
1.2
RDS (ON)
25.25
120
0.2
ID = 100A, VGS = 0V
VGS = 20V
VDS = 120V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 4.0A
VGS = 10V, ID = 4.0A
VGS = 4V, ID = 4.0A
Unit
max
9.0
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
min
0.2
Test Conditions
0.2
Symbol
0.5
4 (Ta = 25C)
20 (Tc = 25C)
EAS *2
80
mJ
Tch
C
150
Tstg
C
55 to +150
*1 PW 100s, duty 1%
PT
(Ta=25C)
Ratings
typ
2.3
(Ta=25C)
Unit
V
V
A
A
W
W
11.3
Ratings
120
20
6
10
0.5
Symbol
VDSS
VGSS
ID
ID (pulse)*1
3.5
6
VGS = 0V
VGS = 4V
VGS = 10V
0.20
Ta = 55C
25C
75C
150C
1
0.5
0.10
0.1
0.05 0.1
0
50
50
100
150
0.5
Tc (C)
3
2
1
0
10
0.2
0.4
ID (A)
(Ta = 25C)
20
1000
500
ID (pulse) max
10
Ciss
ID (A)
Coss
50
0
s
1m
10
RDS (on) LIMITED
100
0.8
10
ID (DC) max
VGS = 0V
f = 1MHz
0.6
VSD (V)
Capacitance (pF)
Ta = 150C
75C
25C
55C
IDR (A)
Re (yfs) (S)
RDS (ON) ()
10
0.30
10
0m
0.5
10
Crss
0.1
10
0
10
20
30
VDS (V)
40
50
10
50
100 200
VDS (V)
123
MOS FET Array STA509A
ID = 1A
VDD 12V
RL = 12
VGS = 5V
RG1 = 50, RG2 = 10
ISD = 6A, VGS = 0V
1.5
0.2
0.3
0.3
0.05
9 2.54=22.86
0.5
C1.5
1 2 3 4 5 6 7 8 9 10
S G D G D G D G D S
a) Part No.
b) Lot No.
(Unit: mm)
0.8
20
VGS = 4V
(2.54)
0.15
0.5
0.25
1.0
VGS = 4V
VDS = 10V
10
Ta = 150C
VGS = 5V
VGS = 10V
0.6
RDS (ON) ()
ID (A)
3
2
0.1
VGS = 3V
Ta = 55C
25C
75C
150C
10
12
0.01
14
10
10
ID = 1A
VDS = 10V
Re (yfs) (S)
VGS = 4V
typ.
0.4
0.3
VGS = 10V
typ.
0.2
Ta = 55C
25C
150C
0.5
0.1
0.2
0.05 0.1
0
50
100
150
0.5
Ta = 150C
75C
25C
55C
0.2
0.4
ID (A)
Tc (C)
(Tc = 25C)
10
ED
1.4
(o
ID (A)
1.2
10
LI
1.0
0
s
1m
IT
n)
S
D
0.8
10
ID (pulse) max
0.6
VSD (V)
1
2
0.5
0.1
0.5
VDS (V)
124
ID (A)
0.5
55C
VGS (V)
RDS (ON) ()
25C
0.4
0
0
VDS (V)
50
75C
0.2
IDR (A)
ID (A)
0.2
VDS = 10V
f = 1.0MHz
VGS = 0V
0.25
0.3
b
a
0.2
0.2
0.25
200
120
20
2.0
7.4
3.3
4.2
1.0
V
A
A
V
S
pF
pF
pF
s
s
s
s
V
4.0
1.0
1.0
0.2
25.25
57
1.0
100
2.5
0.15
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
52
1.2
RDS (ON)
47
9.0
ID = 1mA, VGS = 0V
VGS = 20V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 250A
VDS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A
VGS = 4V, ID = 1.0A
Unit
max
0.2
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
min
0.2
Test Conditions
External Dimensions STA
0.5
4 (Ta = 25C)
20 (Tc = 25C)
EAS *2
40
mJ
Tch
C
150
Tstg
C
55 to +150
*1 PW 100s, duty 1%
PT
Symbol
(Ta=25C)
Ratings
typ
2.3
Unit
V
V
A
A
W
W
11.3
Ratings
525
20
3
6
0.5
Symbol
VDSS
VGSS
ID
ID (pulse) *1
3.5
10
50
10
Thyristor with built-in reverse diode for HID lamp ignition TFC561D

4.440.2
(1.4)
1.30.2
11.30.5
8.60.3
10.20.3
+0.3
Repetitive peak off-state voltage: VDRM=600V

Repetitive peak surge on-state current: ITRM=430A
Critical rate-of-rise of on-state current: di/dt=1200A/s
Gate trigger current: I GT=20mA max
With built-in reverse diode
10.0 0.5
Features
1.20.2
2.590.2
0.5
1.270.2
+0.2
Parameter
Symbol
0.760.1
Ratings
Unit
Conditions
VDRM
600
Repetitive surge peak

on-state current
ITRM
430
Critical rate-of-rise of on-state current
di/dt
1200
A/s
Peak forward gate current
IFGM
2.0
50Hz, duty
10%
50Hz, duty
10%
50Hz
PGM
5.0
Average gate power loss
PG (AV)
0.5
Peak reverse gate voltage
VRGM
Diode repetitive peak surge

forward current
I FRM
240
Tj
40 to +125
Storage temperature
Tstg
40 to +125
2.540.5
Tj=40 to +125C,
Repetitive peak off-state voltage
Peak gate power loss
11.0
0.86 0.1
2.540.5
RGK=1k
VD
430V, 100kcycle,
0.40.1
(1). Cathode (K)

(2). Anode (A)
(3). Gate (G)
(1) (2) (3)
Wp=1.3s, Ta=125C
VD
Weight: Approx. 1.5g
Measurement circuit
430V, 100kcycle,
Wp=1.3s, Ta=125C
* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
VD
Sample
G1
cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles.
G2
(Tj=25C)
Ratings
Symbol
min
typ
Unit
Conditions
max
IT=10A
On-state voltage
VTM
1.4
Gate trigger voltage
VGT
1.5
VD=6V, RL=10
Gate trigger current
IGT
20
mA
VD=6V, RL=10
Gate non-trigger voltage
VGD
Holding current
IH
0.1
2
10.0
VD=480V, Tj=125C
mA
RGK=1k, Tj=25C
Off-state current (1)
IDRM (1)
100
VD=VDRM, RGK=1k, Tj=25C
IDRM (2)
mA
VD=VDRM, RGK=1k, Tj=125C
Thermal resistance
Rth
4.0
C/W
Diode forward voltage
VF
1.4
Junction to case
IF=10A
Current waveform (1cycle)

(Ta=25C)
100A/div
Parameter
2s/div
125
Thyristor with built-in reverse diode for HID lamp ignition TFC562D
Features
4.440.2
(1.4)
9.10.3
(2.69) (1.8)
+0.2
1.34 0.1
+0.2
0.860.1
Symbol
Ratings
Unit
Repetitive peak off-state voltage
VDRM
600
Repetitive surge peak

on-state current
ITRM
600
Critical rate-of-rise of on-state current
di/dt
1600
A/s
Peak forward gate current
IFGM
50Hz, duty 10%
Peak gate power loss
PGM
50Hz, duty 10%
Average gate power loss
PG (AV)
0.5
Peak reverse gate voltage
VRGM
50Hz
Diode repetitive peak surge

forward current
I FRM
460
Ta = 100C, VD 430V,
WP = 1.05s,
100kcycle*,
See the examples of current waveforms
Tj
40 to +125
Storage temperature
Tstg
40 to +125
Conditions
Tj = 40 to +125C,
0.760.1
RGK = 1k
Ta = 100C, VD 430V,
WP = 1.05s, IG = 70mA,
dig/dt = 0.5A/s,
100kcycle*,
See the examples of current waveforms
0.40.1
2.540.1
(Root dimension)
2.540.1
(Root dimension)
10.20.3
Current waveform (1cycle)
* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
(Ta=100C)
cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles.
min
typ
max
Unit
Conditions
On-state voltage
VTM
1.4
IT = 10A
Gate trigger voltage
VGT
1.5
VD = 6V, RL = 10
Gate trigger current
IGT (1)
20
mA
VD = 6V, RL = 10
Gate non-trigger voltage

Holding current
126
Symbol
(Tj=25C)
Ratings
VGD
0.1
IH
VD = 480V, Tj = 125C
mA
RGK = 1k, Tj = 25C
IDRM (1)
10
VD = VDRM, RGK = 1k, Tj = 25C
IDRM (2)
mA
VD = VDRM, RGK = 1k, Tj = 125C
Thermal resistance
Rth
4.0
C/W
Junction to case, With infinite heatsink
Diode forward voltage
VF
1.4
IF = 10A
V: 200A/div
Parameter
2.60.2
(Root dimension)
11.00.5
Parameter
a
b
1.30.2
+0.3
(0.45)
(5)
10.5 0.5
Repetitive peak off-state voltage: VDRM=600V

Repetitive peak surge on-state current: ITRM=600A
Critical rate-of-rise of on-state current: di/dt=1600A/s
Gate trigger current: I GT=20mA max
With built-in reverse diode
H: 2s/div
* A single cycle operation consists of a continuous impression of 50
rounds with period T = 10ms followed by a rest time for the junction
temperature of the element to cool down to 100C (= Ta). Repeat
this cycle operation.
Rectifier Diodes for Alternators

Normal Type
Part No.
Absolute maximum ratings

Tstg
Tj
IF (AV)
IFSM
(A)
(A)
(C)
VRM
(V)
SG-9CNS
SG-9CNR
SG-9LCNS
SG-9LCNR
SG-9LLCNS
SG-9LLCNR
SG-10LS
SG-10LR
SG-10LXS
SG-10LXR
SG-10LLS
SG-10LLR
SG-10LLXS
SG-10LLXR
VF
(V)
max
IR
VZ
Condition (mA)
(V)
IF (A)
max
Condition
IZ (mA)
200
20
200
40 to +150
1.10
20
0.25
200
30
300
40 to +150
1.10
30
0.25
200
35
350
40 to +150
1.10
35
0.25
200
30
300
40 to +150
1.2
100
0.25
150
35
350
40 to +150
1.05
100
0.25
200
40
400
40 to +150
1.05
100
0.25
150
45
450
40 to +150
1.0
100
0.25
Fig.
No.
1
Zener Type
Part No.
Absolute maximum ratings

Tj
Tstg
IF (AV)
IFSM
(A)
(A)
(C)
VRM
(V)
SG-9CZS
SG-9CZR
SG-9LLCZS
SG-9LLCZR
SG-10LZ23S
SG-10LZ23R
SG-10LLZ23S
SG-10LLZ23R
SG-14LXZS
SG-14LXZR
VF
(V)
max
IR
VZ
Condition (mA)
(V)
IF (A)
max
Condition
IZ (mA)
Fig.
No.
17
20
200
40 to +200
1.10
20
0.05
233
10
17
35
350
40 to +200
1.10
35
0.05
233
10
17
30
300
40 to +150
1.2
100
0.05
233
10
17
40
400
40 to +150
1.05
100
0.05
233
10
16
35
350
40 to +200
1.15
100
0.05
223
100
1.5
1.5
3.10.1
3.10.1
S: 19.01.0
R: 23.01.0
Fig. 2
S: 19.01.0
R: 23.01.0
Fig. 1
1
8.40.2
S type
5.0
Fig. 4
R type
12.84
11.5
1.26
S : 20.5
R : 28.5
(1.5)
(4)
(2)
24.0
2.0
R1.2
)
3.0
4.2
5.0
0.4
1.0
Polarity
Polarity
0.6
4.0
4.7
8max
10max
(30
3.6
1.4
(45
4.4
R type
S type
9.0
0.3
2.5
(5.8)
S type
10.7
13.5
10.0
9.50.2
R type
Polarity
1.2
7.00.2
8.40.2
Fig. 3
50.4
Polarity
1.2
50.4
(R0.5)
S type
R type
127
High-voltage Diodes for Igniters
Part No.
VRM
(kV)
Electrical Characteristics (Ta=25C)

IRSM
IRSM
IF (AV)
(mA)
(mA)
(A)
Peak value of
50 Hz
Peak value
single shot
half-wave triangular
of 50 Hz
wave
signal
half-wave
with 100s
half-power
average
signal
bandwidth
SHV-01JN
0.5
30
30
SHV-05J
2.5
30
30
SHV-06JN
3.0
30
10
Tj
Tstg
VF
(V)
max
(C)
IR
Vz
(A)
(kV)
VR =VRM IR =100A
IF (mA) max
Condition
1
40 to +150
10
10
Fig.
No.
0.55 to 1.0
2.6 to 5.0
3.2 to 6.0

Fig. 2 (SHV-06JN)
2.5
C0.5
0.2
2.50.2
0.5
0.5
Fig. 1 (SHV-05J)
C0.5
27min
27min
50.2
128
27min
6.5
27min
Power Zener Diode
(Ta=25C)

Part No.
P
(W)
SFPZ-68
SJPZ-K28 *
SJPZ-E18 *
SJPZ-E27 *
SJPZ-E33 *
SJPZ-E36 *
PZ628
Condition
(C)
40 to +150
25.0 to 31.0
10
55 to +150
25.0 to 31.0
10
55 to +150
16.8 to 19.1
10
55 to +150
25.1 to 28.9
10
25
55 to +150
31.0 to 35.0
10
27
55 to +150
34.0 to 38.0
10
20
65*1
40 to +150
25.0 to 31.0
10
50
VDC
(V)
I ZSM
(A)
50
(5ms)
20
20
13
20
1500
(5ms)
IR
Fig.
VR =VDC No.
(A)
IZ (mA) max
VZ (V)
1mA
instantaneous
current
PR
(W)
85
(500s)
Tj
Tstg
SZ-10N27
22
70*1
55 to +175
24 to 30
10
10
SZ-10N40 *
22
40*1
55 to +175
36 to 40
10
10
SZ-10NN27
22
90*1
55 to +175
24 to 30
10
10
SZ-10NN40 *
22
55*1
55 to +175
36 to 40
10
10
Remarks
Surface-mount
type
Axial type
* 1: IZSM conditions
IRSM
IRSM
Surface-mount
type
10ms
Time
* under development
Fig. 1
Fig. 2
4.50.2
2.0min
5.1
Fig. 3
1.35 0.4
+0.4
0.1
1.10.2
1.30.4
1.3 0.05
C2
Cathode marking
0.050.05
+0.1
+0.4
1.30.4
1.50.2
5.0 0.1
1.50.2
Fig. 3
8.50.5
100.3
50.3
2.70.3
7.20.5
(9.75)
15.50.5
100.3
10.0 0.2
13.50.3
56.0 0.7
10.0 0.02
20.3
30.5
2.00.5
1.35 0.4
2.150.2
0.05
2.05 0.2
2.60.2
2.6 0.2
4.5 0.2
129
General-purpose Diodes
Rectifier Diodes
Surface-mount
VRM
(V)
Part No.
SFPM-52
I F (AV)
(A)
I FSM
(A)
Peak value
of 50 Hz
half-wave
signal
Tj
(C)
Tstg
(C)
I R (H)
(mA)
IR
(A)
VF
(V)
max
Condition
I F (A)
VR=VRM
max
VR=VRM Condition
Ta (C)
max
Rth (j-l)
(C/W)
Package
Weight
(g)
0.9
30
1.0
1.0
10
50
100
20
0.072
SFPM-62
1.0
45
0.98
1.0
10
50
100
20
0.072
SFPM-54
0.9
30
1.0
1.0
10
50
100
20
0.072
1.0
45
0.98
1.0
10
50
100
20
0.072
200
40 to +150
400
SFPM-64
Ultra Fast Recovery Rectifier Diodes

Surface-mount
VRM
(V)
Part No.
I F (AV)
(A)
I FSM
(A)
Peak value
of 50 Hz
half-wave
signal
Tj
(C)
Tstg
(C)
I R (H)
(mA)
IR
(A)
VF
(V)
max
Condition
I F (A)
VR=VRM
max
t rr
(ns)
VR=VRM Condition
Ta (C)
max
Condition
I F/IRP (mA)
t rr
(ns)
Condition
I F/IRP (mA)
Rth (j-l)
(C/W)
Package
Weight
(g)
SFPL-52
0.9
25
0.98
1.0
10
150 (Tj)
50
100/100
35
100/200
20
0.072
SFPL-62
1.0
25
0.98
2.0
10
150 (Tj)
50
100/100
35
100/200
20
0.072
MPL-102S
10.0
65
0.98
5.0
100
0.2
150
40
100/100
30
100/200
2.5
1.4
MP2-202S
20.0
110
0.98
10.0
200
0.4
150
50
100/100
35
100/200
2.5
1.4
1.0
25
1.3
1.0
10
0.05
150
50
100/100
30
100/200
20
0.072
IR
(A)
I R (H)
(mA)
200
400
SFPL-64
40 to +150
Schottky Barrier Diodes

Surface-mount
Part No.
VRM
(V)
I F (AV)
(A)
I FSM
(A)
Peak value
of 50 Hz
half-wave
signal
Tj
(C)
Tstg
(C)
VF
(V)
max
Condition
I F (A)
VR=VRM
max
VR=VRM Condition
Ta (C)
max
Rth (j-l)
(C/W)
Package
Weight
(g)
SFPJ-53 *
30
1.0
30
0.45
1.0
1.0
35
150
20
0.072
SFPJ-63
30
2.0
40
0.45
2.0
2.0
70
150
20
0.072
SFPJ-73
30
3.0
50
0.45
3.0
3.0
100
150
20
0.072
SFPB-54
40
1.0
30
0.55
1.0
35
150
20
0.072
SFPB-64
40
2.0
60
0.55
2.0
70
150
20
0.072
SFPE-64
40
2.0
40
0.6
2.0
0.2
70
150
20
0.072
SFPB-74
40
3.0
60
0.5
2.0
100
150
20
0.072
SFPB-56
60
0.7
10
0.62
0.7
30
150
20
0.072
SFPW-56
60
1.5
25
0.7
1.5
70
150
20
0.072
SFPB-66
60
2.0
25
0.69
2.0
55
150
20
0.072
SFPB-76
60
2.0
40
0.62
2.0
70
150
20
0.072
SFPB-59
90
0.7
10
0.81
0.7
30
150
20
0.072
SFPB-69
90
1.5
40
0.81
1.5
55
150
20
0.072
40 to +150
* under development
0.7
4.9
0 to 0.25
1.15 0.1
2.29 0.5 2.29 0.5
0.8 0.1
a) Part No.
b) Polarity
c) Lot No.
0.5 0.2
1.1 0.2
1.2max
2.5 0.4
0.05
+0.4
5.1 0.1
1.35 0.4
0.16
2.9
5.5 0.4
2.6 0.2
2.05 0.2
2.0min
5.4
4.1
1.37
0.55 0.1
0.80.1
1.35 0.4
2.30.4
6.5 0.4
5.4 0.4
1.7 0.5
4.5
2: (TO-220S)
0.2
0.55 0.1
1.5 0.2
(Common with heatsink)
1.5 max
N.C
130
5.0
1: (Surface-mount SFP)
Cathode
Anode
General-purpose Diodes - Taping Specifications
Taping Specifications
Taping
Name
1.35 0.4
2.0min
Marking of Part No.,

Lot No., quantity, etc.
1.5
5.5 0.05
4.0
+0.1
0
0.1
2.0 0.5
5.5
13 0.5
1,800 pcs.
65
1.35 0.4
12.0 0.3
2.05 0.2
+ 0.1
0.05 0.05
2.6 0.2
4.5
0.2
0.2
1.1
1.5 0.2
+0.4
5.1 0.1
Packaging
Quantity
Reel
1.75 0.1
Emboss taping
Packaging Dimensions (mm) and Markings
Taping Dimensions (mm)
2.0
per reel
210.8
R1.0
2.6
Pull out direction
4.0 0.1
A suffix "V" is
added to Part
No. for tape
packaging.
141.5
178 2
3.1
(1) The right side of the tape is the cathode viewing in the unfold direction.
(2) The product is inserted into the case with the installed electrode on the lower side.
(3) A leader tape 150 to 200mm long is provided on the unfolding edge.
(4) A space of at least 10 pitches equivalent is provided on either end of the tape.
(5) Taping with reversed diode polarity is available on request (taping name VL).
2.0 0.5
Power Surface-mount - Taping Specifications

Taping
Name

Part No.
Pull out direction
Materials
Disc: both-face white
corrugated cardboard
Core: foamed styrol
Quantity
VL
Taping name
(type)
Packaging
Quantity
Lot No.
3,000 pcs.
1 3 8
10
1001
3302
130.2
40
60
22
20
11.50.1
per reel
4.90.1
80
(Seal part)
120.1
240.3
14.40.1
40.1
(Bottom dimensions)
21.50.1
20.1
120
10.80.1
(Seal part)
R135
0.1
(Bottom dimensions)
VR
25.51
29.51
0.40.1
2.5
Pull out direction
(Cover tape)
+0.1
1.5 0
1 3 8
10
A suffix "VL" is
added to Part
No. for tape
packaging.
1.75 0.1
35
5.4max
3,000 pcs.
7 0.5
90.5
per reel
20.5
210.8
.5
0
A suffix "VR" is
added to Part
No. for tape
packaging.
.2
0
13
130.5
High-voltage diodes for ignition - Taping Specifications

Taping
Name
Packaging
Quantity
50.5
Axial taping
Part No.
1.2 max
V1
Lot No.
Quantity
1.5
1.0 max
6 1.0
58 1
6 1.0
25
A suffix "V1" is
added to Part
No. for tape
packaging.
per reel
29
75 1.5
5,000 pcs.
3402
131
General-purpose Diodes - Taping Specifications
Power Zener Surface-mount - Taping Specifications

Taping
Name
Packaging
Quantity
Pull out direction
VL
750 pcs.
1 3 B
VR
R TYPE
L TYPE
25.51
29.51
0.400.05
10.800.1
8
per reel
20.5
210.8
5
0.
13
.2
132
750 pcs.
90.5
7 0.5
A suffix "VR" is
added to Part
No. for tape
packaging.
1001
3302
40
20
60
80
120
1.500.25
16.000.1
130.2
22
16.000.1
10
R135
Pull out direction
per reel
5.640.1
11.500.1
2.000.1
+0.3
4.000.1
24.000.1
1.500.1
1 3 B
10
A suffix "VL" is
added to Part
No. for tape
packaging.
1.750.1
35
130.5
The label showing the

product name, quantity
and production lot is
attached to the reel.
LEDs
3-1. Uni-Color LED Lamps
..............
134
3-2. Bi-Color LED Lamps
..................
137
3-3. Surface Mount LEDs
..................
138
.....................................
140
3-4. Infrared LEDs
3-5. Ultraviolet LEDs ............................... 141

3-6. Multi-chip Modules
.....................
142
133
General-purpose LEDs
Uni-Color LED Lamps

mW
GaAsP
A GaInP
mA
30
mA /C
0.45
I FP
mA
VR
Top
Tstg
Deep red
High-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
Red
Amber
5 Round
Orange
Yellow
Green
Pure green
Ultra high-intensity red
Ultra high-intensity orange
Ultra high-intensity pure green
Ultra high-intensity blue
Red
Amber
Orange
Green
Pure green
High-intensity red
4.65.6
Egg-shaped
Green
Deep red
Red
4 Round
Amber
Orange
Yellow
GaN
Conditions
120
IF
Emitting color
InGaN
75
I F
Outline
134
GaP
Above 25C
100
70
f=1kHz, tw=100s
5
30 to +80
30 to +85
30 to +100
Part No.
SEL1110R
SEL1110W
SEL1110S
SEL1610W
SEL1610C
SEL1210R
SEL1210S
SEL1810D
SEL1810A
SEL1910D
SEL1910A
SEL1710Y
SEL1710K
SEL1410G
SEL1410E
SEL1510C
SEL1210RM
SEL1210SM
SEL1810DM
SEL1810AM
SEL1910DM
SEL1910AM
SEL1710KM
SEL1410GM
SEL1410EM
SEL1510CM
SELU1210CXM
SELU1910CXM-S
SELU1D10CXM
SELU1E10CXM
SELS1E10CXM-M
SELU1250CM
SEL1250SM
SEL1250RM
SEL1850AM
SEL1850DM
SEL1950KM
SEL1450EKM
SEL1450GM-YG
SEL1550CM
SELU1D50CM
SELU1E50CM
SEL1615C
SELU1253CMKT
SEL1453CEMKT
SEL4110S
SEL4110R
SEL4210S
SEL4210R
SEL4810A
SEL4810D
SEL4910A
SEL4910D
SEL4710K
SEL4710Y
VF
(V)
Lens color
typ
max
2.0
2.5
1.75
2.2
1.9
2.5
1.9
2.5
1.9
2.5
2.0
2.5
2.0
2.5
2.0
2.5
1.9
2.5
1.9
2.5
1.9
2.5
2.0
2.5
2.0
2.5
2.0
2.0
2.0
3.3
3.3
3.7
2.0
2.5
2.5
2.5
4.0
4.0
4.2
2.5
1.9
2.5
1.9
2.5
1.9
2.5
2.0
2.5
2.0
3.3
3.3
1.75
2.0
2.0
2.5
4.0
4.0
2.2
2.5
2.5
2.0
2.5
1.9
2.5
1.9
2.5
1.9
2.5
2.0
2.5
Diffused red
Diffused white
Tinted red
Diffused white
Clear
Diffused red
Tinted red
Diffused orange
Tinted orange
Diffused orange
Tinted orange
Diffused yellow
Tinted yellow
Diffused green
Tinted green
Clear
Diffused red
Tinted red
Diffused orange
Tinted orange
Diffused orange
Tinted orange
Tinted yellow
Diffused green
Tinted green
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Tinted green
Diffused green
Clear
Clear
Clear
Clear
Clear
Tinted green
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Electro-optical characteristics (Ta=25C)

Peak wavelength Dominant wavelength
IV
p (nm)
p (nm)
(mcd)
Condition
IF (mA)
typ
typ
typ
2.8
5
2.8
625
700
4.5
250
20
642
660
300
26
20
620
630
75
18
10
605
610
37
14
10
590
587
25
22
10
571
570
65
32
20
567
560
84
20
50
559
555
36
20
620
630
75
18
10
605
610
37
19
10
590
587
34
10
65
571
570
30
20
567
560
84
20
50
559
555
20
280
625
635
20
450
589
591
20
2000
530
525
20
600
470
468
20
1000
470
468
20
900
625
635
75
20
620
630
48
90
20
605
610
60
20
96
590
587
190
20
567
560
120
20
72
559
555
20
6000
530
525
20
1850
470
468
20
170
642
660
20
200
625
635
20
140
567
560
2.4
5
625
700
1.7
30
20
620
630
17
20
10
605
610
15
26
10
590
587
16
36
10
571
570
14
Chip
material
Fig. No.
Unit
PD
Contact
mount
Parameter
(Ta=25C)
Ratings
GaA As
GaP
GaA As
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
A GaInP
A GaInP
InGaN
InGaN
InGaN
A GaInP
GaAsP
GaAsP
GaAsP
GaP
GaP
InGaN
InGaN
GaA As
A GaInP
GaP
5
6
GaP
GaAsP
GaAsP
GaAsP
GaP
Emitting color
Green
Ultra high-intensity green
Pure green
Deep red
Red
4 Round
Amber
Orange
Yellow
Green
Pure green
Deep red
Red
Amber
Orange
Yellow
Green
Pure green
Blue
Ultra high-intensity
deep red
Red
Amber
Ultra high-intensity light amber
Orange
3 Round
Ultra high-intensity yellow
Yellow
Green
Deep green
Pure green
Red
Orange
Yellow
Green
Pure green
Deep red
High-intensity red
Ultra high-intensity deep red
Red
Amber
Part No.
SEL4410E
SEL4410G
SELU4410CKT-S
SEL4510C
SEL4114S
SEL4114R
SEL4214S
SEL4214R
SEL4814A
SEL4814D
SEL4914A
SEL4914D
SEL4714K
SEL4714Y
SEL4414E
SEL4414G
SEL4514C
SEL6110S
SEL6110R
SEL6210S
SEL6210R
SEL6810A
SEL6810D
SELU6910C-S
SEL6910A
SEL6910D
SEL6710K
SEL6710Y
SEL6410E
SEL6410G
SEL6510C
SEL6510G
SEL6E10C
SELU6614C-S
SELU6614W-S
SELU6214C
SEL6214S
SEL6814A
SELS6B14C
SELU6914C-S
SEL6914A
SEL6914W
SELU6714C
SEL6714K
SEL6714W
SEL6414E
SELU6414G-S
SEL6414E-TG
SEL6514C
SELS6D14C
SELS6E14C-M
SEL6215S
SEL6915A
SEL6715C
SEL6415E
SEL6515C
SEL2110S
SEL2110R
SEL2110W
SEL2610C
SELU2610C-S
SEL2210S
SEL2210R
SEL2210W
SEL2810A
SEL2810D
SELU2B10A-S
Lens color
Tinted green
VF (V)
typ
max
2.0
2.5
2.1
2.0
2.5
2.5
2.0
2.5
1.9
2.5
1.9
2.5
1.9
2.5
2.0
2.5
2.0
2.5
2.0
2.5
2.0
2.5
1.9
2.5
1.9
2.5
2.0
2.5
1.9
2.5
2.0
2.5
2.0
2.5
2.0
2.5
4.0
4.8
2.0
2.5
2.0
1.9
1.9
2.
2.0
2.5
2.5
2.5
2.5
2.5
1.9
2.5
2.1
2.5
2.0
2.5
2.0
2.1
2.0
2.0
3.3
3.7
1.9
1.9
2.0
2.0
2.0
2.5
2.5
2.5
2.5
4.0
4.2
2.5
2.5
2.5
2.5
2.5
2.0
2.5
1.75
2.0
2.2
2.5
1.9
2.5
1.9
2.5
2.0
2.5
Diffused green
Clear
Clear
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Tinted red
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Clear
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Diffused green
Clear
Clear
Diffused white
Clear
Tinted red
Tinted orange
Clear
Clear
Tinted orange
Diffused white
Clear
Tinted yellow
Diffused white
Tinted green
Diffused green
Tinted green
Clear
Clear
Clear
Tinted red
Tinted orange
Clear
Tinted green
Clear
Tinted red
Diffused red
Diffused white
Clear
Clear
Tinted red
Diffused red
Diffused white
Tinted orange
Diffused orange
Tinted orange

IV
(mcd) Condition
p (nm)
p (nm)
typ
typ
typ
IF (mA)
87
20
560
567
34
20
560
562
170
20
555
559
45
3.8
10
700
625
2.8
40
20
630
620
24
20
10
610
605
15
26
10
587
590
11
38
10
570
571
27
69
20
560
567
48
20
26
555
559
3.9
10
700
625
2.6
41
20
630
620
18
22
10
610
605
9.6
20
550
591
589
22
10
587
590
11
37
10
570
571
11
90
20
560
567
30
42
20
555
559
9.6
20
60
430
466
150
20
650
639
90
20
180
635
625
20
18
630
620
10
9.0
610
605
20
120
600
596
20
180
591
589
8.0
10
587
590
5.0
20
60
572
571
66
20
570
571
30
42
20
560
567
30
20
560
562
18
20
558
564
12
20
555
559
300
20
518
525
70
20
468
470
45
20
630
620
60
20
587
590
90
20
570
571
81
20
560
567
44
20
555
559
4
1.8
10
700
625
1.8
60
20
660
642
300
20
650
639
40
15
20
630
620
15
22
10
610
605
9.0
300
20
598
595
Chip
material
Fig. No.
Outline
Contact
mount
Uni-Color LED Lamps
GaP
A GaInP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
GaP
GaAsP
GaAsP
A GaInP
GaAsP
GaP
GaP
GaP
GaN
A GaInP
A GaInP
GaAsP
GaAsP
A GaInP
A GaInP
GaAsP
A GaInP
10
GaP
GaP
A GaInP
GaP
GaP
InGaN
InGaN
GaAsP
GaAsP
GaP
GaP
GaP
11
GaP
GaA As
A GaInP
12
GaAsP
GaAsP
A GaInP
135
Emitting color
Orange
Yellow
Green
Pure green
3 Round
Blue
Red
Amber
Orange
Yellow
Green
Pure green
Red
Amber
Orange
Yellow
Green
Pure green
Inverted-cone
typ for surface
illumination
Green
Deep green
Pure green
High-intensity red
Red
Amber
Orange
Yellow
Green
Pure green
High-intensity red
Ultra high-intensity deep red
Red
Ultra high-intensity amber
5mm Pitch lead

rectangular
Amber
Orange
Green
Pure green
Blue
Red
Amber
5mm Pitch lead

bow-shaped
Orange
Yellow
Green
Pure green
Blue
136
Part No.
SEL2910A
SEL2910D
SELU2710C
SEL2710K
SEL2710Y
SEL2410E
SEL2410G
SEL2510C
SEL2510G
SELU2D10C
SELU2E10C
SEL2E10C
SELU2215R-S
SEL2215S
SEL2215R
SEL2815A
SEL2815D
SEL2915A
SEL2915D
SEL2715K
SEL2715Y
SEL2415E
SEL2415G
SEL2515C
SEL1213C
SEL1813A
SEL1913K
SEL1713K
SEL1413E
SEL1513E
SELU6213C-S
SELS6B13W
SEL6413E
SEL6413E-TG
SEL6513C
SEL2613CS-S
SEL2213C
SEL2813A
SEL2913K
SEL2713K
SEL2413E
SEL2413G
SEL2513E
SEL5620C
SELU5620S-S
SELU5220C-S
SEL5220S
SELU5820C-S
SEL5820A
SELU5B20C
SEL5920A
SELU5720C
SEL5420E
SEL5520C
SEL5E20C
SELS5223C
SEL5223S
SEL5823A
SELS5B23C
SELS5923C
SEL5923A
SELU5723C
SEL5723C
SEL5423E
SEL5523C
SELU5E23C
SEL5E23C
Lens color
Tinted orange
VF (V)
typ
max
1.9
2.5
2.1
2.5
2.0
2.5
2.0
2.5
2.0
2.5
3.3
3.3
4.0
2.0
4.0
4.0
4.8
2.5
1.9
2.5
1.9
2.5
1.9
2.5
2.0
2.5
2.0
2.5
2.0
1.9
1.9
1.9
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
1.75
1.9
1.9
1.9
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.2
2.5
2.5
2.5
2.5
2.0
2.5
2.0
1.75
2.0
2.0
1.9
2.0
1.9
2.0
1.9
2.1
2.0
2.0
4.0
2.0
1.9
1.9
2.0
2.0
1.9
2.1
2.0
2.0
2.0
3.3
4.0
2.5
2.2
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.8
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
4.0
4.8
Diffused orange
Clear
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Diffused green
Clear
Clear
Clear
Diffused red
Tinted red
Diffused red
Tinted orange
Diffused orange
Tinted orange
Diffused orange
Tinted yellow
Diffused yellow
Tinted green
Diffused green
Clear
Tinted red
Tinted orange
Tinted light orange
Tinted yellow
Tinted green
Tinted light green
Clear
Diffused white
Tinted green
Tinted green
Clear
Tinted light red
Tinted red
Tinted orange
Tinted orange
Tinted yellow
Tinted green
Diffused green
Tinted green
Clear
Tinted red
Clear
Tinted red
Clear
Tinted orange
Clear
Tinted orange
Clear
Tinted green
Clear
Clear
Clear
Tinted red
Tinted orange
Clear
Clear
Tinted orange
Clear
Clear
Tinted green
Clear
Clear
Clear

IV
(mcd) Condition
p (nm)
p (nm)
typ
typ
typ
IF (mA)
16
10
590
587
8.0
20
270
571
572
40
10
571
570
14
77
20
567
560
20
43
20
559
555
8.2
20
1200
530
525
20
400
470
468
20
60
466
430
20
380
624
632
45
20
620
630
38
80
10
605
610
60
81
10
590
587
53
130
10
571
570
110
110
20
567
560
72
20
52
559
555
20
7.0
620
630
20
8.0
605
610
20
8.0
590
587
20
15
571
570
20
12
567
560
20
5.0
559
555
20
30
624
632
20
60
596
600
20
14
567
560
20
6
564
558
20
5.0
559
555
20
20
642
660
20
7.0
620
630
20
8.0
605
610
20
8.0
590
587
20
17
571
570
14
20
567
560
12
20
5.0
559
555
20
100
642
660
20
100
639
650
20
120
624
632
20
20
620
630
20
150
605
611
20
12
605
610
20
120
596
600
20
12
590
587
20
50
571
572
20
20
567
560
20
6.0
559
555
20
10
466
430
20
100
625
635
20
25
620
630
20
35
605
610
20
135
596
600
20
145
589
591
20
35
590
587
20
155
571
572
20
60
571
570
20
40
567
560
20
13
559
555
20
180
470
468
20
20
466
430
Chip
material
Fig. No.
Outline
Contact
mount
Uni-Color LED Lamps
GaAsP
A GaInP
GaP
GaP
12
GaP
InGaN
InGaN
GaN
A GaInP
GaAsP
GaAsP
GaAsP
13
GaP
GaP
GaP
GaAsP
GaAsP
GaAsP
GaP
GaP
GaP
A GaInP
A GaInP
GaP
GaP
GaP
GaA As
GaAsP
GaAsP
GaAsP
GaP
14
15
16
GaP
GaP
GaA As
A GaInP
A GaInP
GaAsP
A GaInP
GaAsP
A GaInP
GaAsP
A GaInP
GaP
GaP
GaN
A GaInP
GaAsP
GaAsP
A GaInP
A GaInP
GaAsP
A GaInP
GaP
GaP
GaP
InGaN
GaN
17
18
Bi-Color LED Lamps

mW
GaP
GaAsP
IF
mA
30
I F
mA /C
0.45
I FP
mA
100
VR
Top
30 to +85
Tstg
30 to +100
Outline
Part No.
SML11516C
SML1516W
SML1216C
SML1216W
SML1816W
5 Round
SML19416W
SMLU12E16C
SMLU12E16W
SMLU12D16W
SMLU18D16C
SMLU18D16W-S
SML72420C
3.36
Rectangular
SML78420C
SML79420C
SML72423C
SML72923C
SML78423C
3.36
Bow-shaped
SML79423C
SMLS79723C
SMLU72423C-S
SMLU79423C-S
A GaInP
Also applies to simultaneous lighting

Above 25C
f=1kHz, tw=100s
Emitting color
Conditions
InGaN
120
75
Lens color
Deep red
Clear
Pure green
Deep red
Diffused white
Pure green
Red
Clear
Green
Red
Diffused white
Green
Amber
Diffused white
Green
Orange
Diffused white
Green
Clear
Diffused white
Diffused white
VF (V)

IV
p (nm)
p (nm)
(mcd)
Condition
typ
typ
typ
IF (mA)
Chip
material
typ
max
2.0
2.5
15
20
700
625
GaP
2.0
2.5
50
20
555
559
GaP
2.0
2.5
6.0
20
700
625
GaP
2.0
2.5
20
20
555
559
GaP
1.9
2.5
65
20
630
620
GaAsP
2.0
2.5
90
20
560
567
GaP
1.9
2.5
60
20
630
620
GaAsP
2.0
2.5
60
20
560
567
GaP
1.9
2.5
50
20
610
605
GaAsP
2.0
2.5
60
20
560
567
GaP
1.9
2.5
45
20
587
590
GaAsP
2.0
2.5
60
20
560
567
GaP
2.0
2.5
500
20
632
624
A GaInP
3.3
4.0
400
20
468
470
InGaN
2.0
2.5
250
20
632
624
A GaInP
3.3
4.0
150
20
468
470
InGaN
2.0
2.5
250
20
632
624
A GaInP
3.3
4.0
700
20
525
530
InGaN
A GaInP
2.0
2.5
800
20
611
605
3.3
4.0
2000
20
525
530
InGaN
2.0
2.5
300
20
611
605
A GaInP
3.3
4.0
500
20
525
530
InGaN
Red
1.9
2.5
15
20
630
620
AGaAsP
Green
2.0
2.5
20
20
560
567
GaP
Amber
1.9
2.5
10
20
610
605
GaAsP
Green
2.0
2.5
20
20
560
567
GaP
Orange
1.9
2.5
10
20
587
590
GaAsP
Green
2.0
2.5
20
20
560
567
GaP
Red
1.9
2.5
25
20
630
620
GaAsP
Green
2.0
2.5
35
20
560
567
GaP
Red
1.9
2.5
25
20
630
620
GaAsP
Orange
1.9
2.5
25
20
587
590
GaAsP
Amber
1.9
2.5
25
20
610
605
GaAsP
Green
2.0
2.5
35
20
560
567
GaP
Orange
1.9
2.5
25
20
587
590
GaAsP
2.0
2.5
35
20
560
657
GaP
2.0
2.5
150
20
590
590
A GaInP
2.0
2.5
40
20
570
571
GaP
2.0
2.5
120
20
635
625
A GaInP
2.2
2.5
30
20
560
567
A GaInP
2.0
2.5
150
20
590
590
A GaInP
2.2
2.5
30
20
560
567
A GaInP

Clear
Diffused white
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Green
Clear
Yellow
Clear
Clear
Common
Fig. No.
Unit
PD
Contact
mount
Parameter
(Ta=25C)
Ratings
GaA As
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
19
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
20
Cathode
Cathode
Cathode
Cathode
Cathode
21
Cathode
Cathode
Cathode
137
Surface Mount LEDs

(Ta=25C)
Parameter
Unit
IF
mA
Ratings
GaA As
A GaInP
30
I F
mA /C
0.45
I FP
mA
70
VR
Top
30 to +85
Tstg
GaP
GaAsP
Conditions
GaN
InGaN
Above 25C
f=1kHz, tw=100s
5
25 to +85
30 to +100
Outline
Emitting color
Red
Amber
Orange
Side view
(flat lens type)
Yellow
Green
Deep green
Pure green
Red
Amber
Side view
(inner lens type)
Orange
Yellow
Green
Deep green
Pure green
Deep red
High-intensity red
Red
Amber
Orange
31.5
(flat lens type)
Yellow
Green
Deep green
Pure green
Blue
High-intensity red
Red
31.5
(inner lens type)
Amber
Orange
Yellow
Green
Deep green
Pure green
138
Part No.
SEC4201C
SEC4801C
SEC4901C
SEC4701C
SEC4401C
SEC4401E-TG
SEC4501C
SECU4E01C
SEC4203C
SEC4803C
SEC4903C
SEC4703C
SEC4403C
SEC4403E-TG
SEC4503C
SEC1101C
SEC1601C
SEC1201C
SEC1801C
SEC1901C
SEC1701C-YG
SEC1401C
SEC1401E-TG
SEC1501C
SECU1D01C
SECU1E01C
SEC1E01C
SEC1603C
SECS1203C
SEC1203C
SECS1803C
SEC1803C
SECS1903C
SEC1903C
SEC1703C
SEC1403C
SEC1403E-TG
SEC1503C
Lens color
VF (V)

IV
p (nm)
(mcd)
p (nm)
Condition
IF (mA)
typ
typ
typ
Chip
material
typ
max
Clear
1.9
2.5
10
20
630
620
GaAsP
Clear
1.9
2.5
16
20
610
605
GaAsP
Clear
1.9
2.5
13
20
587
590
GaAsP
Clear
2.0
2.5
25
20
570
571
GaP
Clear
2.0
2.5
22
20
560
567
GaP
Tinted green
2.0
2.5
11
20
558
564
GaP
Clear
2.0
2.5
8.0
20
555
559
GaP
Clear
3.3
4.0
50
20
468
470
InGaN
Clear
1.9
2.5
15
20
630
620
GaAsP
Clear
1.9
2.5
20
20
610
605
GaAsP
Clear
1.9
2.5
15
20
587
590
GaAsP
Clear
2.0
2.5
35
20
570
571
GaP
Clear
2.0
2.5
33
20
560
567
GaP
Tinted green
2.0
2.5
15
20
558
564
GaP
Clear
2.0
2.5
10
20
555
559
GaP
Clear
2.0
2.5
1.5
20
700
625
GaP
Clear
1.7
2.2
25
20
660
642
GaA As
Clear
1.9
2.5
10
20
630
620
GaAsP
Clear
1.9
2.5
16
20
610
605
GaAsP
Clear
1.9
2.5
13
20
587
590
GaAsP
Clear
2.0
2.5
25
20
570
571
GaP
Clear
2.0
2.5
22
20
560
567
GaP
Tinted green
2.0
2.5
11
20
558
564
GaP
Clear
2.0
2.5
8.0
20
555
559
GaP
Clear
3.3
4.0
150
20
525
525
InGaN
Clear
3.3
4.0
50
20
470
468
InGaN
Clear
3.9
4.8
6.0
20
430
466
GaN
Clear
1.7
2.2
35
20
660
642
GaA As
Clear
1.9
2.5
100
20
635
625
A GaInP
Clear
1.9
2.5
15
20
630
620
GaAsP
Clear
1.9
2.5
10
615
607
A GaInP
Clear
1.9
2.5
20
20
610
605
GaAsP
Clear
1.9
2.5
70
20
590
590
A GaInP
Clear
1.9
2.5
15
20
587
590
GaAsP
Clear
2.0
2.5
35
20
570
571
GaP
Clear
2.0
2.5
33
20
560
567
GaP
Tinted green
Clear
2.0
2.5
15
20
558
564
GaP
2.0
2.5
10
20
555
559
GaP
Fig. No.
Uni-Color Surface Mount LEDs
22
23
24
25
Surface Mount LEDs
Outline
Part No.
SEC2422C
SEC2442C
SEC2462C
32.5
(flat lens type)
SEC2492C
SEC2552C
SEC2592C
SEC2762C-YG
SEC2484C
SEC2554C
32.5
(inner lens type)
SEC2494C
SEC2764C
SEC2774C
Emitting color
Red
Green
Green
Green
High-intensity red
Green
Orange
Green
Pure green
Pure green
Orange
Pure green
High-intensity red
Yellow
Amber
Green
Pure green
Pure green
Orange
Green
High-intensity red
Yellow
Yellow
Yellow
Lens color
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
VF (V)

IV
p (nm)
p (nm)
(mcd)
Condition
typ
typ
typ
IF (mA)
20
10
620
630
Chip
material
typ
1.9
max
2.5
2.0
2.5
20
20
560
567
GaP
2.0
2.5
20
20
560
567
GaP
2.0
2.5
20
20
560
567
GaP
1.7
2.2
20
20
660
642
GaA As
2.0
2.5
20
20
560
567
GaP
1.9
2.5
10
20
587
590
GaAsP
2.0
2.5
20
20
560
567
GaP
2.0
2.5
5.0
20
555
559
GaP
2.0
2.5
5.0
20
555
559
GaP
1.9
2.5
10
20
587
590
GaAsP
2.0
2.5
5.0
20
555
559
GaP
1.7
2.2
20
20
660
642
GaA As
2.0
2.5
20
20
570
571
GaP
1.9
2.5
20
20
610
605
GaAsP
2.0
2.5
30
20
560
567
GaP
2.0
2.5
10
20
555
559
GaP
2.0
2.5
10
20
555
559
GaP
1.9
2.5
20
20
587
590
GaAsP
2.0
2.5
30
20
560
567
GaP
1.7
2.2
50
20
660
642
GaA As
2.0
2.5
50
20
570
571
GaP
2.0
2.5
50
20
570
571
GaP
2.0
2.5
50
20
570
571
GaP
Fig. No.
Uni-color / Bi-color Surface Mount LEDs with two elements
GaAsP
26
27
139
Infrared LEDs
Parameter
Unit
(Ta=25C)
Conditions
Ratings
IF
mA
150
I F
mA /C
1.33
Above 25C
I FP
mA
1000
f=1kHz, tw=10s
VR
Top
30 to +85
Tstg
30 to +100
Part No.
typ
5 Round
3 Round
3 1.5
(inner lens type)
chip
140
SID1010CM
SID1K10CM
SID1010CXM
SID1K10CXM
SID1050CM
SID303C
SID313BP
SID1003BQ
SID307BR
SID1G307C
SID1G313C
SID2010C
SID2K10C
SEC1G03C

Radiant intensity Ie
Peak wavelength
p (nm)
(mW/sr)
Condition
max
typ
typ
VF (V)
Lens color
Chip
material
Clear
1.3
1.5
130
940
GaAs
Clear
1.3
1.5
200
940
GaAs
Clear
1.3
1.5
80
940
GaAs
Clear
1.3
1.5
110
940
GaAs
Clear
1.3
1.5
250
940
GaAs
Clear
1.3
1.5
80
940
GaAs
Transparent
light purple
Transparent
light navy blue
Transparent
dark navy blue
1.3
1.5
130
940
GaAs
1.3
1.5
180
940
GaAs
1.3
1.5
200
940
GaAs
Clear
1.5
1.8
50
850
GaAs
Clear
1.5
1.8
50
850
GaAs
Clear
1.3
1.5
940
GaAs
Clear
1.3
1.5
14
940
GaAs
Clear
1.5
1.8
850
GaA As
(Constant
voltage)
Vcc=3V,
R=2.2
IF=50mA
Fig. No.
Outline
Contact
mount
Infrared LEDs
28
29
30
31
25
Ultraviolet LEDs
Parameter
(Ta=25C)
Ratings
Unit
Conditions
IF
mA
30
I F
mA /C
0.45
I FP
mA
100
f=1kHz, tw=10s
IR
mA
100
Max. rating of built-in Zener diode
Top
30 to +85
Tstg
30 to +100
Above 25C
Ultraviolet Surface Mount LEDs
2.8 3.5
Part No.
SECU1V0AC
typ
max
IV
(mcd)
typ
3.7
4.0
2.2
Lens color
Clear
VF (V)
Peak wavelength
Condition
IF(mA)
p (nm)
typ
20
385
(V)
typ
Condition
Chip
material
Fig. No.

Outline
4000
100pF, 1.5k
InGaN
32
Electrostatic withstand voltage
141
Multi-chip LED Module (under development)

Parameter
Ratings
Conditions
With an infinite heatsink mounted
IF
mA
40
I F
mA /C
0.25
I FP
mA
100
VR
Topr
30 to +85
Tstg
30 to +100
f=1kHz, tw=10s
Colors compliant
with JIS-Z9112
Color temperature [K]

20mA
Total flux [lm]

20mA
Chromaticity x, y
20mA
SEP8WD4001
Cool white
6400
30
0.32, 0.33
SEP8WN4001
Natural white
5000
30
0.34, 0.35
SEP8WE4001
White
4200
30
0.37, 0.37
SEP8WW4001
Warm white
3450
25
0.41, 0.38
SEP8WL4001
Light bulb
2875
25
0.44, 0.41
Part No.
142
(Per element Ta=25C)
Unit
Fig. No.
33
General-purpose LEDs - External Dimensions
Cathode
(1.0)
0.8
Anode
1.0min
Resin burr 0.3max
7.70.5
23.5min
5.70.2
Resin heap 1.5max
5.60.2
0.50.1
1.1max
0.5
(2.54)
5.00.2
Cathode
0.5
Resin heap 1.5max
4.60.2
19.0min 0.8
Fig.6
7.60.2
4.70.2
20.0min 5.00.5
2-0.50.1
5.60.2
(2.54)
Fig.1
0.65max
(Unit: mm)
Fig.2
Resin heap 1.5max

0.40.1
(1.5)
0.40.1
Resin heap 1.5max
Cathode
Resin heap 0.8max
Fig.9
0.80.2
4.00.2
0.65max
5.00.2
(2.54)
Cathode
5.50.5
3.50.1
Resin heap
0.8max
Fig.10
0.8
1.1max
0.5
0.50.1
Resin heap 1.5max
4.00.2
23.0min
4.50.5
(1.6)
2.50.1
Cathode
0.40.1
3.5
(2.54)
5.00.2
Cathode
1.0min
4.4
3.5
0.65max
8.2
(1.0)
(2.54)
19.0min 0.8
0.2
0.8
20.0min 5.5
0.5
0.2
5.6
0.2
0.450.1
Fig.5
23.0min
(1.7)
Cathode
0.40.1
9.40.3
21.0min
1.0min
1.0min
4.4
3.5
3.10.1
Resin heap 0.8max
0.50.1
0.65
max
0.50.1
Resin burr 0.3max
(2.54)
Anode
0.450.1
Fig.4
0.65max
0.450.1
4.8
0.65max
0.50.1
0.50.1
5.00.2
24.5min
2.2
(2.54)
Cathode
1.0min
Resin heap 1.5max
(2.54)
(1.0) 6.90.2
5.00.2
23.0min
1.5
1.1max
4.8
0.65max
0.50.1
1.0min
0.5
0.8
Fig.8
5.60.2
6.5
Cathode
Fig.3
5.00.2
25.5min
2.2
(2.54)
0.50.1
1.0min
4.00.2
Cathode
Fig.7
4.00.2
(1.0) 7.60.2
0.450.1
23.0min
(2.54)
1.0min
5.00.2
5.60.2
Resin heap
0.8max
143
(Unit: mm)
2.60.1
25.8min
1.7
(2.54)
3.10.1
(1.3)
0.4
Resin heap
0.8max
0.4
0.1
Resin burr 0.3max

Resin heap 1.5max
0.65max
0.450.1
0.65max
0.450.1
0.40.1
Cathode 1.0min
3.50.1
(2.54)
4.00.2
Cathode
Fig.16
5.5
3.80.1
0.80.2
23.0min
(1.7)
Resin burr
0.3max
4.4
1.0min
3.5
3.10.1
Fig.11
6.00.2
1.0min
5.80.5
23.0min
Resin heap 1.5max
Cathode
Cathode mark
Resin burr 0.3max
Resin heap 0.8max
0.50.1
3.1
3.6
6.00.2
3.60.2
3.9
6.2
0.65max
0.450.1
0.40.1 Cathode
3.30.2
Fig.18
0.5+0.1
4.00.1
(1.3)
(5.0)
3.10.1
0.50.1
Cathode mark
Resin burr 0.3max
Resin heap 0.8max
0.65max
Cathode
3.6
25.4min
4.20.5
23.0min
1.4
0.65max
0.450.1
Resin heap 1.5max
(2.54)
1.55 1.0min
3.8
1.0min
6.2
(2.54)
3.8
0.4
Fig.17
0.65max
(1.3)
1.7
Fig.13
3.50.1
0.50.1
25.8min
(5.0)
Cathode 1.0min
1.4
Fig.12
3.10.1
Cathode mark
Fig.20
1.0min 1.5min
144
Resin burr 0.3max

Resin heap 0.8max
5.00.2
Resin burr 0.3max

Resin heap 1.5max
1.2
0.8
20.0min
(2.54) (2.54)
6.2
3.50.1
0.65max
Cathode
0.40.1 0.450.1
(2.54)
0.80.2
4.0
0.2
4.4
(1.7) 2.50.1
0.65max
Resin heap 1.5max
4.5
10.60.5
1.0 7.60.2
3.9
6.00.2
23.0min
3 0.50.1
0.8
1.1max
0.50.1
1.0min
3.5
0.5
3.6
Resin burr 0.3max

Resin heap 1.5max
3.3
Fig.15
2.0
0.50.1
0.5
(2.54)
0.5
1.0min 1.5min 17.0min

0.1
0.65max
(1.0)
4.90.2
Cathode 19.0min 0.8
Fig.19
5.80.2
0.5+0.1
20.0min 5.00.5
(2.54) (2.54)
5.60.2
5.80.2
Fig.14
(Unit: mm)
5.80.5
3.9
2.5
1.5
1.0
0.9
1.0
1.5
2.0
3.0
3.60.2
Resin burr 0.3max

Resin heap 1.5max
Anode
3.10.2
0.50.1
0.65max
0.50.1
6.2
3.6
1.40.1
Cathode
(0.5)
0.9
0.60.1
mark
Cathode
Fig.26
(2.54) (2.54)
1.0min 1.5min 20.0min
6.00.2
Fig.21
Resin
B
P.C.B.
Fig.22 SEC4001
P.C.B.
Cathode mark
1.0
Cathode
Resin
MAX 0.1
1.40.1
Cathode
(0.5)
0.9
0.60.1
mark
Cathode
1.4
4-R0.35
1.0
1.5
(0.5)
2.0
3.0
0.9
1.5
0.9
1.0
(1.6)
2.5
1.5
(0.6)
2.0
1.5
3.0
2.5
Fig.27
Anode
0.1
Electrode burr
Anode
Lens
0.8
Resin
P.C.B.
1.8
0.1
0.9
(0.5)
Electrode burr
MAX 0.1
0.45
1.6
2.0
1.7
1.0
2.53
3.0
Cathode
1.3
0.6
1.5
1.4
Cathode
mark
Fig.28
5.60.2
1.0min
(1.0)
23.0min
5.00.2
Fig.23 SEC4003
Cathode
Anode
0.50.1
Fig.24
1.5
1.4
Cathode
mark
0.9
(0.5)
1.3
Dimension A (mm)
SID1010CM
7.60.2
SID1K10CM
SID1010CXM 6.90.2
SID1K10CXM
Resin burr 0.3max

Resin heap 1.5max
1.6
1.5
2.0
3.0
0.6
Cathode
0.65max
P.C.B.
0.50.1
Lens
(2.54)
Resin
0.50.1
1.03
P.C.B.
Resin
Anode
1.4
0.9
Cathode
(0.5)
Anode
1.3
(2.54)
Cathode
mark
Lens
Resin
0.50.1
Cathode
1.6
1.0
1.7
2.0
3.0
0.6
1.5
21.0min
9.40.3
5.00.2
Fig.25
1.0min
0.65
max
0.50.1
0.50.1
Fig.29
Resin burr 0.3max

Resin heap 0.8max
P.C.B.
Anode
145
(Unit: mm)
Fig.30
Fig.32
8.50.5
24.0min
2.0min
Anode
Side view
3.5
3.2
(2.7)
1.4
0.2
2.8
(2.4)
Cathode
1.1max
0.85+0.1
0.60.1
0.60.1
(2.54)
4.80.2
5.6
Surface
(0.8)
Resin burr 0.3max

Resin heap 1.5max
0.60.1
Cathode Mark
Side view
Dimension A (mm)
SID303C
3.00.5
SID313BP
SID1003BQ
SID307BR
SID1G307C
3.60.5
Reverse Side
0.8
Inner circuit
ZD
4.20.5
2.6
LED
Anode
Anode
Fig.31
Cathode
Fig.33
Resin: color White
13.2
Resin burr 0.3max

Resin heap 1.5max
8.8 0.3
(0.8)
4.4
0.65max
0.40.1
0.450.1
12 11 10 9
16 15 14 13
(2.54)
3.8
0.4
3.5
12.0
10.0
(0.7)
(1.3)
1.7
3.5
4.8
25.8min
5.8
1.0min
0.1
3.10.1
Cathode
Heatsink
1
2.0
Mark
0.3 0.05
146
Cathode
Resin
0.2 0.05
(0.5)
3.00.25
P1.0*3=3.0 0.25
Part No.
Description
Page
Part No.
Description
Page
Part No.
Description
Page
2SA1488/A
Power transistor
80
SEC2422C
3 x 2.5 Surface Mount 2-Chip LED
139
SEL1513E
5 Inverted-cone LED for Surface illumination
136
2SA1567
Power transistor
81
SEC2442C
139
SEL1550CM
5 Round Narrow-directivity LED, Direct

mount supported
134
2SA1568
Power transistor
82
SEC2462C
139
SEL1610C
5 Round Standard LED (With Stopper)
134
2SA1908
Power transistor
83
SEC2484C
3 x 2.5 Surface Mount Inner Lens Type

2-Chip LED
139
SEL1610W
134
2SB1622
Power transistor
84
SEC2492C
139
SEL1615C
5 Round Narrow-directivity LED
134
2SC3852
Power transistor
85
SEC2494C

2-Chip LED
139
SEL1710K
134
2SC4024
Power transistor
86
SEC2552C
139
SEL1710KM
5 Round Standard LED
134
2SC4065
Power transistor
87
SEC2554C

2-Chip LED
139
SEL1710Y
134
2SC4153
Power transistor
88
SEC2592C
139
SEL1713K
136
2SD2141
Power transistor
89
SEC2762C-YG 3 x 2.5 Surface Mount 2-Chip LED
139
SEL1810A
134
2SD2382
Power transistor
90
SEC2764C
139
SEL1810AM
134
2SD2633
Power transistor
91
SEC2774C

2-Chip LED
2-Chip LED
139
SEL1810D
134
2SK3710
MOS FET
108
SEC4201C
Side-view Surface Mount LED
138
SEL1810DM
134
2SK3711
MOS FET
109
SEC4203C
Side-view Surface Mount Inner Lens TypeLED
138
SEL1813A
136
2SK3724
MOS FET
110
SEC4401C
138
SEL1850AM
134
2SK3800
MOS FET
111
SEC4401E-TG
138
SEL1850DM

mount supported
mount supported
2SK3801
MOS FET
112
SEC4403C
138
SEL1910A
134
2SK3803
MOS FET
113
SEC4403E-TG
138
SEL1910AM
134
2SK3851
MOS FET
114
SEC4501C
138
SEL1910D
134
FKV460S
MOS FET
115
SEC4503C
138
SEL1910DM
134
FKV660S
MOS FET
116
SEC4701C
138
SEL1913K
136
FP812
Power transistor
92
SEC4703C
138
SEL1950KM

mount supported
134
MN611S
Power transistor
93
SEC4801C
138
SEL2110R
3 Round Type LED
135
MN638S
Power transistor
94
SEC4803C
138
SEL2110S
3 Round Type LED
135
MP2-202S
Ultrafast Recovery Diode (Surface Mount)
130
SEC4901C
138
SEL2110W
3 Round Type LED
135
MPL-102S
Ultrafast Recovery Diode (Surface Mount)
130
SEC4903C
138
SEL2210R
3 Round Type LED
135
PZ628
Power Zener Diode (Surface Mount)
129
SECS1203C
3 x 1.5 Surface Mount Inner Lens TypeLED
138
SEL2210S
3 Round Type LED
135
SDA03
Power transistor Array (Surface Mount)
96
SECS1803C
138
SEL2210W
3 Round Type LED
135
SDA04
97
SECS1903C
138
SEL2213C
136
SDC09
98
SECU1D01C
3 x 1.5 Surface Mount LED
138
SEL2215R
3 Round Type Narrow-directivity LED
136
SDH04
High-side Power Switch IC
24
SECU1E01C
138
SEL2215S
136
SDK06
MOS FET Array ( Surface mount )
117
SECU1V0AC
2.8 x 3.5 Ultraviolet Surface Mount LED
141
SEL2410E
3 Round Type LED
136
SDK08
118
SECU4E01C
138
SEL2410G
3 Round Type LED
136
SDK09
119
SEL1110R
134
SEL2413E
136
SEC1101C
138
SEL1110S
134
SEL2413G
136
SEC1201C
138
SEL1110W
134
SEL2415E
136
SEC1203C
138
SEL1210R
134
SEL2415G
136
SEC1401C
138
SEL1210RM
134
SEL2510C
3 Round Type LED
136
SEC1401E-TG
138
SEL1210S
134
SEL2510G
3 Round Type LED
136
SEC1403C
138
SEL1210SM
134
SEL2513E
136
SEC1403E-TG
138
SEL1213C
136
SEL2515C
136
SEC1501C
138
SEL1250RM
134
SEL2610C
3 Round Type LED
135
SEC1503C
138
SEL1250SM

mount supported
mount supported
134
SEL2613CS-S
136
SEC1601C
138
SEL1410E
134
SEL2710K
3 Round Type LED
136
SEC1603C
138
SEL1410EM
134
SEL2710Y
3 Round Type LED
136
SEC1701C-YG 3 x 1.5 Surface Mount LED
138
SEL1410G
134
SEL2713K
136
SEC1703C
138
SEL1410GM
134
SEL2715K
136
SEC1801C
138
SEL1413E
136
SEL2715Y
136
SEC1803C
138
SEL1450EKM
134
SEL2810A
3 Round Type LED
135
SEC1901C
138
SEL1450GM-YG

mount supported
mount supported
134
SEL2810D
3 Round Type LED
135
SEC1903C
138
SEL1453CEMKT
4.6 x 5.6 Egg-shaped LED
134
SEL2813A
136
SEC1E01C
138
SEL1510C
134
SEL2815A
136
SEC1G03C
3 x 1.5 Infrared Surface Mount Inner Lens Type LED
140
SEL1510CM
134
SEL2815D
136
134
147
Part No.
Page
Part No.
Description
Page
Part No.
Description
Page
SEL2910A
3 Round Type LED
136
SEL6410G
3 Round Type LED, Direct mount supported
135
SEL2910D
3 Round Type LED
136
SEL6413E
136
SEL2913K
136
SEL6413E-TG
SEL2915A
136
SEL6414E
SEL2915D
136
SEL6414E-TG
SEL2E10C
3 Round Type LED
136
SEL6415E
3 Inverted-cone LED for Surface illumination,

Direct mount supported
3 Round Type Wide-directivity LED,
3 Round Type Narrow-directivity LED,
SEL4110R
4 Round Type LED
134
SEL6510C
135
SEL4110S
4 Round Type LED
134
SEL6510G
135
Pitch Lead Rectangular LED,

SELU5B20C 5mm
Pitch Lead Bow-shaped LED,
SELU5E23C 5mm
SELU6213C-S Direct mount supported
Round Type Wide-directivity LED,
SELU6214C 3
SELU6414G-S Direct mount supported
SELU6614C-S 3
SELU6614W-S Direct mount supported
SELU6714C 3
SEL4114R
135
SEL6513C
136
SELU6910C-S
135
SEL6514C
135
SELU6914C-S

135
SEL4210R
4 Round Type LED
134
SEL6515C

SEL4114S

135
SEP8WD4001
Multi-chip LED Module
142
SEL4210S
4 Round Type LED
134
SEL6710K
135
SEP8WE4001
142
SEL4214R
135
SEL6710Y
135
SEP8WL4001
142
SEL4214S

135
SEL6714K
135
SEP8WN4001
142
SEL4410E
4 Round Type LED
135
SEL6714W
135
SEP8WW4001
142
SEL4410G
4 Round Type LED
135
SEL6715C

135
SFPB-54
Schottky Barrier Diode(Surface Mount)
130
SEL4414E
135
SEL6810A
135
SFPB-56
130
SEL4414G

135
SEL6810D
135
SFPB-59
130
SEL4510C
4 Round Type LED
135
SEL6814A

135
SFPB-64
130
SEL4514C

135
SEL6910A
135
SFPB-66
130
SEL4710K
4 Round Type LED
134
SEL6910D
135
SFPB-69
130
SEL4710Y
4 Round Type LED
134
SEL6914A
135
SFPB-74
130
SEL4714K
135
SEL6914W
135
SFPB-76
130
SEL4714Y

135
SEL6915A

135
SFPE-64
130
SEL4810A
4 Round Type LED
134
SEL6E10C
135
SFPJ-53
130
SEL4810D
4 Round Type LED
134
SELS1E10CXM-M
5 Round Wide-directivity LED
134
SFPJ-63
130
SEL4814A
135
SELS5223C
SFPJ-73
130
135
SELS5923C
136
SFPL-52
Ultrafast Recovery Diode(Surface Mount)
130
SEL4910A
4 Round Type LED
134
SELS5B23C
136
SFPL-62
130
SEL4910D
4 Round Type LED
134
SELS6B13W
136
SFPL-64
130
SEL4914A
135
SELS6B14C
135
SFPM-52
Rectifier Diode(Surface Mount)
130
135
SELS6D14C
135
SFPM-54
130
136
SELS6E14C-M
135
SFPM-62
130
136
SELU1210CXM
134
SFPM-64
130
136
SELU1250CM
5 Round Narrow-directivity LED,

134
SFPW-56
130
136
SELU1253CMKT
4.6 x 5.6 Egg-shaped LED
134
SFPZ-68
Power Zener Diode
129
136
SELU1910CXM-S 5 Round Wide-directivity LED
134
SG-9CNR
Rectifier Diode for Alternator
127
136
SELU1D10CXM
134
SG-9CNS
127
136
SELU1D50CM

134
SG-9CZR
127
136
SELU1E10CXM
134
SG-9CZS
127
136
SELU1E50CM

134
SG-9LCNR
127
136
SELU2215R-S
136
SG-9LCNS
127
136
SELU2610C-S
3 Round Type LED
135
SG-9LLCNR
127
136
SELU2710C
3 Round Type LED
136
SG-9LLCNS
127
136
SELU2B10A-S
3 Round Type LED
135
SG-9LLCZR
127
SEL5E23C

5mm Pitch Lead Rectangular LED,
5mm Pitch Lead Bow-shaped LED,

136
SEL4814D

136
SELU2D10C
3 Round Type LED
136
SG-9LLCZS
127
SEL6110R
135
SELU2E10C
3 Round Type LED
136
SG-10LLR
127
SEL6110S
135
SELU4410CKT-S
4 Round Type LED
135
SG-10LLS
127
SEL6210R
135
SELU5220C-S
136
SG-10LLXR
127
SEL6210S
135
SELU5620S-S
136
SG-10LLXS
127
SEL6214S
135
SELU5720C
136
SG-10LLZ23R
127
SEL6215S

135
SELU5723C
136
SG-10LLZ23S
127
SEL6410E
135
SELU5820C-S

136
SG-10LR
127
SEL4914D
SEL5220S
SEL5223S
SEL5420E
SEL5423E
SEL5520C
SEL5523C
SEL5620C
SEL5723C
SEL5820A
SEL5823A
SEL5920A
SEL5923A
SEL5E20C
148
Description
136
135
135
135
136
135
136
136
135
135
135
135
135
Part No.
Description
Page
Part No.
Description
Page
SG-10LS
127
SML1516W
5 Round Standard Bicolor LED
137
SG-10LXR
127
SML1816W
137
SG-10LXS
127
SML19416W
137
SG-10LZ23R
127
SML72420C
3.3 x 6 Rectangular Type Bicolor LED
137
SG-10LZ23S
127
SML72423C
3.3 x 6 Bow-Shaped Type Bicolor LED
137
SG-14LXZS
127
SML72923C
137
SG-14LXZS
127
SML78420C
137
SHV-01JN
High-Voltage Rectifier Diode for Ignition Coil
128
SML78423C
137
SHV-05J
128
SML79420C
137
SHV-06JN
128
SML79423C
137
SI-3001S
Linear Regulator IC
SMLS79723C
137
SI-3003S
Linear Regulator IC
10
SMLU12D16W 5 Round Standard Bicolor LED
137
SI-3101S
Linear Regulator IC
12
SMLU12E16C
137
SI-3102S
Linear Regulator IC
14
SMLU12E16W
137
SI-3201S
Switching Regulator IC
22
SMLU18D16C
137
SI-3322S
System Regulator IC
16
SMLU18D16W-S
137
SI-5151S
26
SMLU72423C-S
137
SI-5152S
28
SMLU79423C-S
137
SI-5153S
30
SPF0001
100
SI-5154S
32
SPF3004
System Regulator IC
18
SI-5155S
34
SPF3006
System Regulator IC
20
SI-5300
Full-bridge Motor Driver IC
60
SPF5002A
Low-side Power Switch IC
50
SID1003BQ
5 Round Infrade LED
140
SPF5003
40
SID1010CM
5 Round Infrade LED
140
SPF5004
42
SID1010CXM
5 Round Infrade LED
140
SPF5007
44
SID1050CM
5 Round Infrade LED, Direct mount supported
140
SPF5009
52
SID1G307C
5 Round Infrade LED
140
SPF5012
54
SID1G313C
5 Round Infrade LED
140
SPF5017
46
SID1K10CM
5 Round Infrade LED
140
SPF5018
48
SID1K10CXM
5 Round Infrade LED
140
SPF7211
Stepper-motor Driver IC
58
SID2010C
3 Round Infrade LED
140
SPF7301
Full-bridge Motor Driver IC
62
SID2K10C
3 Round Infrade LED
140
SSD103
Power transistor
95
SID303C
5 Round Infrade LED
140
STA315A
Power transistor Array
101
SID307BR
5 Round Infrade LED
140
STA335A
102
SID313BP
5 Round Infrade LED
140
STA415A
103
SJPZ-E18
129
STA460C
104
SJPZ-E27
129
STA461C
105
SJPZ-E33
129
STA463C
106
SJPZ-E36
129
STA464C
107
SJPZ-K28
129
STA508A
MOS FET Array
123
SLA2402M
High Voltage Driver IC for HID Lamps
64
STA509A
MOS FET Array
124
SLA2403M
68
SZ-10N27
129
SLA2501M
36
SZ-10N40
129
SLA2502M
38
SZ-10NN27
129
SLA4708M
Stepper-motor Driver IC
56
SZ-10NN40
129
SLA5027
MOS FET Array
120
TFC561D
125
SLA5098
MOS FET Array
121
TFC562D
3-Pin Reverce Conducting Thyrisyor for

HID Lamp Ignition
3-Pin Reverce Conducting Thyrisyor for
HID Lamp Ignition
SLA8004
99
SMA2409M
72
SMA5113
MOS FET Array
122
SML11516C
137
SML1216C
137
SML1216W
137
126
149
http://www.sanken-ele.co.jp
SANKEN ELECTRIC CO.,LTD.
ISO 9001/14001 Certified
Sanken products are manufactured and delivered to the customer based

on a strict quality and environmental control system established and
certified by the ISO 9001/14001 international certification standards.
1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo

Tel: 81-3-3986-6164 Fax: 81-3-3986-8637
IProducts: Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp),
Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments
Overseas Sales Offices

Asia
Singapore
North America
Sanken Electric Singapore Pte. Ltd.
115 Northeast Cutoff, Worcester, MA 01606 General Information

Tel: 1-508-853-5000 Fax: 1-508-853-3353
150 Beach Road, #14-03 The Gateway West Singapore 189720, Singapore
Tel: 65-6291-4755 Fax: 65-6297-1744
China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: 852-2735-5262 Fax: 852-2735-5494
Allegro MicroSystems, Inc.
Europe
Sanken Power Systems (UK) Ltd.
Abercynon, Mountain Ash, Mid Glamorgan CF45 4XA, U.K.
Tel: 44-1443-742-333 Fax: 44-1443-743-354
Sanken Electric (Shanghai) Co., Ltd.

Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, China
Tel: 86-21-5208-1177 Fax: 86-21-5208-1757
Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
Tel: 82-2-714-3700 Fax: 82-2-3272-2145
Taiwan
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C.
Tel: 886-2-2356-8161 Fax: 886-2-2356-8261
The information contained in this document is correct as of July 2006.

This
is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following:
1. Resell or retransfer these products/technology to any party intending to disturb international peace and security.
2. Use these products/technology yourself for activities disturbing international peace and security.
3. Allow any other party to use these products/technology for activities disturbing international peace and security.
Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign
Trade Law, when you export or transfer the products/technology abroad.
This document uses 100% recycled paper.
H1-C01ED0-0607020TA

Automotive Devices PDF

Загружено:

Сведения о документе

Исходное описание:

Оригинальное название

Авторское право

Доступные форматы

Поделиться этим документом

Поделиться или встроить документ

Параметры публикации

Этот документ был вам полезен?

Это неприемлемый материал?

Авторское право:

Доступные форматы

Automotive Devices PDF

Загружено:

Авторское право:

Доступные форматы

SANKEN ELECTRIC CO.,LTD.

Dropper Type Regulator ICs

Dropper Type System Regulator ICs

1-2. Power Switch ICs

Low-side Switch ICs

1-3. Motor Driver ICs

2-1-2. Transistor Arrays

2-2. MOS FETs

2-2-2. MOS FET Arrays

2-4-2. High-voltage Diodes for Igniter

2-4-4. General-purpose Diodes

3-2. Bi-Color LED Lamps

3-3. Surface Mount LEDs

3-4. Infrared LEDs .................................................................................. 140

3-6. Multi-chip Modules

Part Number Index in Alphanumeric Order

Examples of Use of Typical Products by Application

Driver Transistor Arrays (p.99)

driver power transistors (p.68 and after)

SG-9 / SG-10 / SG-14

2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C /

SLA2402M / SLA2403M / SMA2409M

for HID lamp ignition (p.125 and after)

FET arrays for driving HID lamps (p.122)

stepper-motor driver ICs for AFS (p.58 and after)

Multi-chip LED modules (p.142)

Various LEDs (p.133)

driver MOS FETs (p.108 and after)

2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 /

ABS and VDC

solenoid drivers (high-side power switch ICs) (p.26 and after)

driver MOS FETs (p.108 and after)

SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M

Integral current detection resistor, current monitor output, surface-mount and

2SK3710 / FKV660S / SLA5027 / SDK08

driver ICs (p.54)

2-circuit types are also available.

1-3. Motor Driver ICs

Dropper Type Regulator ICs

Stepper-motor Driver ICs

SI-3001S (5V/1A, With Output ON/OFF Control) ... 8

SPF7211 (40V, 0.8A)

SI-3003S (5V/0.8A, 3-terminal) ....................... 10

DC Motor Driver ICs

SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12

SI-5300 (40V, 5A)

SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14

SPF7301 (36V, 7A)

Dropper Type System Regulator ICs

SI-3322S (5V, Surface-mount) ........................ 16

1-4. HID Lamp Driver ICs

SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18

SLA2402M (500V, 15A) .................................. 64

SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20

SLA2403M (500V, 7A) .................................... 68

Switching Type Regulator ICs

SMA2409M (500V, 7A) ................................... 72

1-5. Custom ICs

1-2. Power Switch ICs

SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24

SPF5002A (Surface-mount 4-circuits)

SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52