Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se2

based thin lms

Abstract
Hydrogen effects on deep level defects and a defect generation in proton implanted
Cu(In,Ga)Se2 (CIGS) based thin lms for solar cell were investigated. CIGS lms
with a thickness of 3 m were grown on a soda-lime glass substrate by a coevaporation method, and then were implanted with protons. To study deep level
defects in the proton implanted CIGS lms, deep level transient spectroscopy
measurements on the
CIGS-based solar cells
were carried out,
these
measurements found 6 traps (including 3 hole traps and
3 electron traps). In the proton implanted CIGS lms, the deep level defects, which
are attributed to the re- combination centers of the CIGS solar cell, were signicantly
reduced in intensity, while a deep level defect was generated around 0.28 eV above
the valence band maximum. Therefore, we suggest that most deep level defects in
CIGS lms can be controlled by hydrogen effects.
Conclusion
We utilized DLTS measurement to investigate the hydrogen effect on deep level
defects in hydrogenated CIGS thin lms, and identied deep level defects found in
CIGS-based thin lm solar cells. It was found that the at-band voltage shifts in the C
V hysteresis curves and the dark leakage current in IV curves are suppressed by
hydro- gen effects. Also, we demonstrated that most deep level defects in the CIGS
thin
lms are controlled by this effect. However, a deep level defect with an
activation energy of 0.28 eV above the valence band maximum is generated during the
hydrogen treatment.