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Ain Shams University

Faculty of Engineering
ECE Dept.
CHEP

Electronic Circuits
(COMM 361)
Spring 2015
Dr. Sameh A. Ibrahim

Exercise 3
MOSFET Physics and Biasing
In the following problems, unless otherwise stated, assume nCox = 200 A/V2, pCox = 100 A/V2,
= 0, and VTH = 0.4 V for NMOS devices and 0.4 V for PMOS devices.
1. Determine the region of operation of M1 in each of the circuits shown in Fig. 1.
2. Sketch IX as a function of VX for the circuits shown in Fig. 2. Assume VX goes from 0 to VDD = 1.8
V. Also, = 0. Determine at what value of VX the device changes its region of operation.
3. Determine how the transconductance of a MOSFET (operating in saturation) changes if
(a) W/L is doubled but ID remains constant.
(b) VGS VTH is doubled but ID remains constant.
(c) ID is doubled but W/L remains constant.
(d) ID is doubled but VGS VTH remains constant.
4. Determine the region of operation of M1 in each circuit shown in Fig. 3.
5. The two current sources in Fig. 4 must be designed for IX = IY = 0.5 mA. If VB1 = 1 V, VB2 = 1.2 V and =
0.1 V-1, and L1 = L2 = 0.25 m. Calculate W1 and W2. Compare the output resistances of the two current
sources.

6. The circuit of Fig. 5 is designed for a bias current of I1 with certain dimensions for M1 and M2. If
the width and the length of both transistors are doubled, how does the voltage gain change?
Consider two cases: (a) the bias current remains constant, or (b) the bias current is doubled.
7. Explain which one of the topologies shown in Fig. 6 is preferred.
8. (Simulation) Plot the input/output characteristic of the stage shown in Fig. 7 for 0 < Vin < 1.8 V. At
what value of Vin does the slope (gain) reach a maximum?

Figure 1

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Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

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