STK0825F

Semiconductor

Advanced Power MOSFET

DC-DC CONVERTER APPLICATION

HIGH VOLTAGE SWITCHING APPLICATIONS
Features

High Voltage: BVDSS=250V(Min.)

Low Crss : Crss=13pF(Typ.)
Low gate charge : Qg=15nC(Typ.)
Low RDS(on) :RDS(on)=0.4(Max.)

Ordering Information
Type NO.

Marking

STK0825F

Package Code

STK0825

TO-220F-3L

Outline Dimensions

unit : mm
3.05~3.35

3.46 Typ.

9.10~9.30

2.60~3.00

1.07 Min.
0.90 Max.
0.60 Max.

2.54 Typ.

2.54 Typ.

0.60 Max.

4.70 Max.

2.70 Max.

12.20~12.60
12.40~13.00

15.40~15.80

9.80~10.20

KSD-T0O007-000

PIN Connections
1. Gate
2. Drain
3. Source

STK0825F
Absolute maximum ratings

(Tc=25C)

Characteristic

Symbol

Rating

Unit

Drain-source voltage

VDSS

250

Gate-source voltage

VGSS

30

(Tc=25)

(Tc=100)

5.6

IDM

32

Drain power dissipation

PD

25

Drain current (DC)

ID

Drain current (Pulsed)

Avalanche current (Single)

IAS

Single pulsed avalanche energy

EAS

285

mJ

Avalanche current (Repetitive)

IAR

Repetitive avalanche energy

EAR

7.4

mJ

TJ
Tstg

150
-55~150

Junction temperature
Storage temperature range
* Limited by maximum junction temperature

Characteristic
Thermal
resistance

Symbol

Typ.

Max

Junction-case

Rth(J-C)

5.0

Junction-ambient

Rth(J-a)

62.5

KSD-T0O007-000

Unit
/W

STK0825F
Electrical Characteristics
Characteristic

(Tc=25C)

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

BVDSS

ID=250A, VGS=0

250

Gate threshold voltage

VGS(th)

ID=250A, VDS= VGS

2.0

4.0

Drain-source cut-off current

IDSS

VDS=250V, VGS=0V

Gate leakage current

IGSS

VDS=0V, VGS=30V

100

nA

Drain-source on-resistance

RDS(ON)

VGS=10V, ID=4.0A

0.35

0.4

Forward transfer conductance

gfs

VDS=10V, ID=4.0A

4.2

510

770

76

120

13

20

15

85

90

65

15

23

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Total gate charge

Qg

Gate-source charge

Qgs

Gate-drain charge

Qgd

VGS=0V, VDS=25V,
f=1MHz

VDD=125V, ID=8A
RG=25

VDS=125V, VGS=10V
ID=8A

Source-Drain Diode Ratings and Characteristics

Characteristic

Symbol

Source current

IS

Test Condition

pF

ns

nC

(Tc=25C)

Min

Typ

Max

32

Unit

Source current(Plused)

ISM

Integral reverse diode

in the MOSFET

Forward voltage

VSD

VGS=0V, IS=8A

1.4

Reverse recovery time

trr

222

ns

Reverse recovery charge

Qrr

Is=8A, VGS=0,
diS/dt=100A/us

1.45

uC

Note ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=5.9mH, IAS=8A, VDD=50V, RG=27
Pulse Test : Pulse Width 300us, Duty cycle 2%
Essentially independent of operating temperature

KSD-T0O007-000

STK0825F
Electrical Characteristic Curves
Fig. 1 ID - VDS

Fig. 2 ID - VGS

Fig. 4 IS - VSD

Fig. 3 RDS(on) - ID

Fig. 6 VGS - QG

Fig. 5 Capacitance - VDS

KSD-T0O007-000

STK0825F
Fig. 7 VDSS - TJ

Fig. 8 RDS(on) - TJ

Fig. 10 Safe Operating Area

Fig. 9 ID - TC

KSD-T0O007-000

STK0825F
Fig. 11 Gate Charge Test Circuit & Waveform

Fig. 12 Resistive Switching Test Circuit & Waveform

Fig. 13 EAS Test Circuit & Waveform

KSD-T0O007-000

STK0825F
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

KSD-T0O007-000

STK0825F

The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.

KSD-T0O007-000