STC4606

N&P Pair Enhancement Mode MOSFET

6.5A / -6.9A
DESCRIPTION
The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density
DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
and provide superior switching performance. This device is particularly suited for low voltage application
such as notebook computer power management and other battery powered circuits, where high-side
switching, low in-line power loss and resistance to transient are needed.

PIN CONFIGURATION
SOP-8

FEATURE
N-Channel


30V/6.9A, RDS(ON) = 30mTyp
@VGS = 10V


30V/6.0A, RDS(ON) = 46m
@VGS = 4.5V

PART MARKING
SOP-8

P-Channel


-30V/-6.0A, RDS(ON) = 41mTyp
@VGS = -10V


-30V/-5.0A, RDS(ON)= 60m
@VGS = - 4.5V


Super high density cell design for
extremely low RDS(ON)


Exceptional on-resistance and maximum
DC current capability


SOP-8 package

YYear ADate Code

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606 2008. V1

STC4606
N&P Pair Enhancement Mode MOSFET

6.5A / -6.9A
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )

Parameter

Symbol

Typical
P

Unit

Drain-Source Voltage

VDSS

30

-30

Gate-Source Voltage

VGSS

20

20

ID

6.5
5.8

-6.9
-5.0

IDM

26

-30

IS

3.0

-3.0

PD

2.0
1.44

2.0
1.44

TA=25
TA=70

Continuous Drain Current

(TJ=150)
Pulsed Drain Current
Continuous Source Current
(Diode Conduction)

TA=25
TA=70

Power Dissipation
Operation Junction Temperature
Storgae Temperature Range
Thermal Resistance-Junction
to Ambient

T10Sec
Sready State

TJ

150

TSTG

-55/150

RJA

62.5
110

62.5
110

/W

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606 2008. V1

STC4606
N&P Pair Enhancement Mode MOSFET

6.5A / -6.9A

ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static
Drain-Source Breakdown
Voltage

VGS=0V,ID=250uA
VGS=0V,ID=-250uA
VDS=VGS,ID=250 uA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA
VDS=0V,VGS=20V
Gate Leakage Current
IGSS
VDS=0V,VGS=20V
VDS=24V,VGS=0V
IDSS
VDS=-24V,VGS=0V
Zero Gate Voltage Drain
TJ=55
Current
VDS=24V,VGS=0V
VDS=-24V,VGS=0V
VDS5V,VGS=10V
On-State Drain Current
ID(on)
VDS-5V,VGS=-10V
VGS=10V, ID=6.9A
VGS=-10V,ID=-6.0A
Drain-source On-Resistance RDS(on)
VGS=4.5V, ID=5.0A
VGS=-4.5V,ID=-5.0 A
VDS=5V,ID=6.9A
Forward Tran Conductance
gfs
VDS=-15V,ID=-5.9A
IS=1.0A,VGS=0V
Diode Forward Voltage
VSD
IS=-1.7A,VGS=0V
V(BR)DSS

N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P

30
-30
1.0
-1.0

V
3.0
-3.0
100
100
1
-1
5
-5

26
-30

V
nA

uA
A

0.030 0.040

0.041 0.056
0.046
0.060

15
13
0.76
-0.76.

0.055
0.072

S
1.0
-1.0

Dynamic
Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Time

Turn-Off Time

td(on)
tr

td(off)
tf

N-Channel
VDS=15V,VGS=10V
ID6.9A
P-Channel
VDS=-15V,VGS=-10V
ID5.0A
N-Channel
VDS=10V,RL=2.2
ID=1A,VGEN=10V
RG=3
P-Channel
VDS=-10V,RL=2.7
ID=-1A,VGEN=-3V
RG=2.7

N
P
N
P
N
P
N
P
N
P
N
P
N
P

13.8
18.5
1.8
2.7
2.0
4.5
4.6
7.7
4.1
5.7
20.6
20.2
5.2
9.5

16.6
22.2
nC

7
11.5
6
8.5
30
30
8
14

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606 2008. V1

nS

STC4606
N&P Pair Enhancement Mode MOSFET

6.5A / -6.9A
TYPICAL CHARACTERICTICS (N MOS)

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606 2008. V1

STC4606
N&P Pair Enhancement Mode MOSFET

6.5A / -6.9A
TYPICAL CHARACTERICTICS (N MOS)

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606 2008. V1

STC4606
N&P Pair Enhancement Mode MOSFET

6.5A / -6.9A
TYPICAL CHARACTERICTICS (P MOS)

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606 2008. V1

STC4606
N&P Pair Enhancement Mode MOSFET

6.5A / -6.9A
YPICAL CHARACTERICTICS (P MOS)

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606 2008. V1

STC4606
N&P Pair Enhancement Mode MOSFET

6.5A / -6.9A
SOP-8 PACKAGE OUTLINE

STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright 2007, Stanson Corp.

STC4606 2008. V1