by a junction between a layer of metal and a layer of semiconductor?
A) A tunnel diode.B) A Schottky diode C) A zener
diode D) A varactor diode
A) 0.9A B) 0.965 mA C) 19.3mA d) 0.965A Q 6. Electrical conductivity of insulators is the
range _____________. Q 2. Determine Vo (a) 10-10 (Ω-mm)-1 (b) 10-10(Ω-cm)-1 (c) 10-10(Ω-m)-1 (d) 10-8(Ω-m)-1
Q 7. Fermi level for extrinsic semiconductor
depends on
(a) Donor element (b) Impurity concentration
(c) Temperature (d) All
Q 8. Which of the following statements is
incorrect? A) 2.6V B) 0.5V C) 14.6V d) 9.65V A) Conduction with in pure semiconductors is termed intrinsic conduction B) The dominant charge carriers within a doped Q 3. Determine Vo for the network with 10 V on both inputs semiconductor are called majority charge carriers C) At room temperatures, pure semiconductors make excellent conductors D) Doping pure semiconductor material with small amounts of donar impurities produces an n-type semiconductor
Q 9. Which of the following best describes a p-type
semiconductor?
A material with electrons in donor levels which may
be thermally promoted to the conduction band. A) 0 V B) 10V C) 9.7V d) 9.3V B A material with no band gap which conducts with Q 4. For the circuit of Fig. FIND VL if the source little resistance. voltage vS is 2V, The diode is ideal, and RL IS 100. C A material with a sizeable band gap.
D A material with empty acceptor levels to which
electrons from the valence band may be thermally promoted.